JP5121202B2 - プローブカードおよび微小構造体の検査装置 - Google Patents

プローブカードおよび微小構造体の検査装置 Download PDF

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Publication number
JP5121202B2
JP5121202B2 JP2006268431A JP2006268431A JP5121202B2 JP 5121202 B2 JP5121202 B2 JP 5121202B2 JP 2006268431 A JP2006268431 A JP 2006268431A JP 2006268431 A JP2006268431 A JP 2006268431A JP 5121202 B2 JP5121202 B2 JP 5121202B2
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JP
Japan
Prior art keywords
sound wave
microstructure
probe card
test
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006268431A
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English (en)
Japanese (ja)
Other versions
JP2008089350A (ja
Inventor
聖人 林
京太 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2006268431A priority Critical patent/JP5121202B2/ja
Priority to US12/294,481 priority patent/US20100225342A1/en
Priority to KR1020087020894A priority patent/KR101013594B1/ko
Priority to PCT/JP2007/069003 priority patent/WO2008038781A1/ja
Priority to TW096136673A priority patent/TW200831902A/zh
Publication of JP2008089350A publication Critical patent/JP2008089350A/ja
Application granted granted Critical
Publication of JP5121202B2 publication Critical patent/JP5121202B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P21/00—Testing or calibrating of apparatus or devices covered by the preceding groups
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0035—Testing
    • B81C99/005—Test apparatus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Micromachines (AREA)
JP2006268431A 2006-09-29 2006-09-29 プローブカードおよび微小構造体の検査装置 Expired - Fee Related JP5121202B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006268431A JP5121202B2 (ja) 2006-09-29 2006-09-29 プローブカードおよび微小構造体の検査装置
US12/294,481 US20100225342A1 (en) 2006-09-29 2007-09-28 Probe card and microstructure inspecting apparatus
KR1020087020894A KR101013594B1 (ko) 2006-09-29 2007-09-28 프로브 카드 및 미소 구조체의 검사 장치
PCT/JP2007/069003 WO2008038781A1 (fr) 2006-09-29 2007-09-28 Carte de sonde et dispositif d'inspection de structure de minute
TW096136673A TW200831902A (en) 2006-09-29 2007-09-29 Probe card and inspection device of minute structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006268431A JP5121202B2 (ja) 2006-09-29 2006-09-29 プローブカードおよび微小構造体の検査装置

Publications (2)

Publication Number Publication Date
JP2008089350A JP2008089350A (ja) 2008-04-17
JP5121202B2 true JP5121202B2 (ja) 2013-01-16

Family

ID=39230213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006268431A Expired - Fee Related JP5121202B2 (ja) 2006-09-29 2006-09-29 プローブカードおよび微小構造体の検査装置

Country Status (5)

Country Link
US (1) US20100225342A1 (enExample)
JP (1) JP5121202B2 (enExample)
KR (1) KR101013594B1 (enExample)
TW (1) TW200831902A (enExample)
WO (1) WO2008038781A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017014060A1 (ja) * 2015-07-23 2017-01-26 株式会社東京精密 プローバ及びプローブコンタクト方法
WO2022224438A1 (ja) * 2021-04-23 2022-10-27 日本電子材料株式会社 プローブカード及びプローブカード補修方法
SE546398C2 (en) * 2022-09-08 2024-10-22 Silex Microsystems Ab Microstructure inspection device and system and use of the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63157029A (ja) * 1986-12-22 1988-06-30 Agency Of Ind Science & Technol 歪ゲ−ジの動的応答特性測定法
JP2811003B2 (ja) * 1989-02-28 1998-10-15 昭和電線電纜株式会社 部分放電検出装置
JPH04198736A (ja) * 1990-11-29 1992-07-20 Nichiei Denshi Kogyo Kk 構造物の欠陥検出方法およびその検出装置
JPH0534371A (ja) * 1991-07-31 1993-02-09 Tokai Rika Co Ltd 半導体加速度センサの感度測定装置
JPH0933567A (ja) * 1995-07-21 1997-02-07 Akebono Brake Ind Co Ltd 半導体加速度センサのセンサチップ検査方法及び検査装置
US6232790B1 (en) * 1999-03-08 2001-05-15 Honeywell Inc. Method and apparatus for amplifying electrical test signals from a micromechanical device
JP2001264185A (ja) * 2000-03-21 2001-09-26 Nikon Corp レチクルのメンブレンの内部応力測定方法及び装置、並びに半導体デバイスの製造方法
US20040119492A1 (en) * 2002-11-01 2004-06-24 Stefan Schneidewind Method and apparatus for testing movement-sensitive substrates
KR100933536B1 (ko) * 2005-03-03 2009-12-23 도쿄엘렉트론가부시키가이샤 미소 구조체의 검사 장치, 미소 구조체의 검사 방법 및 미소 구조체의 검사 프로그램을 기록한 컴퓨터로 판독 가능한 기록매체
JP4573794B2 (ja) * 2005-03-31 2010-11-04 東京エレクトロン株式会社 プローブカードおよび微小構造体の検査装置

Also Published As

Publication number Publication date
KR101013594B1 (ko) 2011-02-14
US20100225342A1 (en) 2010-09-09
KR20080106206A (ko) 2008-12-04
JP2008089350A (ja) 2008-04-17
TW200831902A (en) 2008-08-01
TWI338138B (enExample) 2011-03-01
WO2008038781A1 (fr) 2008-04-03

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