JP5114898B2 - Package-type electronic component and method for manufacturing package-type electronic component - Google Patents

Description

The present invention relates to an electronic component in which a detection element and other elements are mounted in a cavity in a vacuum atmosphere and a method for manufacturing the electronic component, and an electronic component and an electronic device capable of increasing the amount of getters mounted while reducing the size of the electronic component The present invention relates to a part manufacturing method.

  In a package-type electronic component having a first substrate on which an element is provided and a second substrate attached to the substrate, input / output terminals of the element are provided in a through hole provided in the second substrate and the through hole. What is comprised so that a filled conductor may be included is known (refer patent document 1). According to the technique described in Patent Document 1, each input / output terminal is configured using a through-hole formed in the second substrate, so that the package can be reduced in size.

However, in the structure in which the wiring is drawn from the second substrate side (upper surface side) as in Patent Document 1, there is a problem that the length of the wiring becomes long when the stack structure is formed by stacking the substrates. When the length of the wiring is increased, the operation speed is decreased, which is disadvantageous in high-speed operation. Further, in the structure in which the wiring is drawn from the second substrate side (upper surface side) as in Patent Document 1, a space for laying out the wiring drawn from the second substrate side is required, and the package size is increased accordingly. There was a problem that.

Package-type electronic components are generally difficult to downsize because device elements and their drive circuits are arranged at high density. In particular, in the case where the device operates in a vacuum atmosphere or a rare gas atmosphere, a large amount of getters are provided for removing an impurity gas such as a released gas emitted from the inner surface of the package or a leak gas entering from the outside of the package. Since space for mounting is required, downsizing of electronic components becomes more difficult. Furthermore, when the element is provided with a window substrate for light reception like an infrared detection element, the getter cannot be disposed at a position that blocks light incident from the window substrate, so the arrangement position of the getter mounting space is limited and efficient. There was an inconvenience that difficult layout was difficult. As described above, there is a problem that it is difficult to reduce the package size in the case of an electronic component or a package-type electronic component having a transmission window in a vacuum package type in which a getter needs to be mounted.

JP-A-2005-58744

An object of the present invention is to provide a packaged electronic component and a method of manufacturing the packaged electronic component that can reduce the size of the electronic component itself while increasing the mountable amount of getters. Another object of the present invention is to provide a method for manufacturing a packaged electronic component having a structure in which wiring is drawn from the lower side (bottom surface side) of the package.

  According to the present invention, a package-type electronic component in which a detection element is mounted in a vacuum atmosphere cavity, an element substrate on which the detection element is disposed, a window substrate disposed on the light receiving side of the element substrate, A getter is mounted and formed between a getter substrate disposed on the opposite side of the light receiving side of the element substrate, a first space formed between the element substrate and the window substrate, and the element substrate and the getter substrate. There is provided a packaged electronic component including a communication path that communicates with the second space.

As a result, the amount of getters that can be mounted in the package can be increased, and the electronic components can be miniaturized.

<First Embodiment>
A first embodiment of the present invention will be described with reference to the drawings. 1 to 3 are views for explaining the configuration of the electronic component 100 according to the first embodiment of the present invention. FIG. 1 is a perspective view of an electronic component 100 according to the present embodiment seen from a perspective direction, FIG. 2 is a diagram illustrating a cross section taken along line II-II shown in FIG. 1, and FIG. 3 is an exploded perspective view of the electronic component 100 according to the present embodiment. . As shown in FIGS. 1 to 3, the electronic component 100 according to the present embodiment is mounted in a cavity in which the detection element 1 is in a vacuum atmosphere, that is, a pressure state lower than the atmospheric pressure, or in a cavity in a rare gas atmosphere. The packaged electronic component 100 includes an element substrate 11, a window substrate 13, and a getter substrate 14 having a getter 4. Although not particularly limited, in the electronic component 100 of the present embodiment, the sidewall 12 is interposed between the element substrate 11 and the window substrate 13.

In the present embodiment, the window substrate 13 is disposed on the light receiving side of the element substrate 11, and the getter substrate 14 is disposed on the side opposite to the light receiving side of the element substrate 11. The element substrate 11 and the window substrate 13 and the element substrate 11 and the getter substrate 14 face each other substantially in parallel. When viewed from the light receiving side, these substrates (11 to 14) are stacked (stacked) in the order of the window substrate 13, the sidewall 12, the element substrate 11, and the getter substrate 14, and are hermetically bonded to each other in a vacuum atmosphere. As a result, as shown in FIG. 2, a cavity C is formed inside the electronic component 100. Specifically, a first space 2 kept in a vacuum state is formed between the element substrate 11 and the window substrate 13, and a second space kept in a vacuum state is formed between the element substrate 11 and the getter substrate 14. A space 3 is formed.

  The element substrate 11 is provided with a wiring 15 that is electrically connected to the detection element 1 and a buried wiring 16 that is electrically connected to the wiring 15. A conductive getter substrate wiring 17 is provided in the getter substrate 14 so as to penetrate through the thickness direction thereof. The getter substrate wiring 17 is electrically connected to the embedded wiring 16 of the element substrate 11. The detection element 1 inside the packaged electronic component 100 can transmit and receive electrical signals to and from the outside via the embedded wiring 16 and the getter substrate wiring 17. Although not shown, the getter substrate wiring 17 is pulled out from the lower side (opposite to the light receiving side) of the electronic component 100 and connected to a circuit board on which a microprocessor, a memory, and the like are mounted via bumps. The method of electrical connection with the outside is not limited to that shown in the figure, and the wiring 15 may be drawn from the sidewall 12 and connected to the circuit board by wire bonding. In this case, the getter substrate wiring 17 is connected to the getter substrate 14. There is no need to provide.

Hereinafter, the structure of each board | substrate with which the electronic component 100 of this embodiment is provided is demonstrated.

The window substrate 13 is disposed so as to face the detection element 1 and transmits detection target light including infrared rays. The base material of the window substrate 13 can be appropriately selected depending on the type of the detection element 1. In the case where the detection element 1 detects light incident through the window substrate 13, a material is selected according to the wavelength band of the light to be detected. If the wavelength band is visible light, quartz or glass is preferably used. When the detection element 1 is an element that detects far infrared rays as in the present embodiment, it is preferable to use silicon, germanium, zinc sulfide, zinc selenide, or the like that transmits far infrared rays. The entire window substrate 13 may be formed of these materials, or a transmission window may be provided in a predetermined region of the window substrate 13 facing the detection element 1. In this case, the transmission window is hermetically bonded to the window substrate 13 by low melting point glass or the like. Note that an antireflection film may be formed outside the window substrate 13 or the transmission window formed on the window substrate 13 in order to improve the light transmittance. However, if the detecting element is an element that does not cause a problem of transmitted light, such as a gyro sensor element, it may be any material that can be airtight, such as silicon, glass, ceramics, and the like.

The sidewall 12 is disposed between the element substrate 11 and the window substrate 13. The sidewall 12 surrounds the element substrate 11 and forms a first space 2 between the element substrate 11 and the window substrate 13. The aspect of the sidewall 12 is not particularly limited, and the aspect is determined according to the bonding method of the element substrate 11 and the window substrate 13. For example, when the element substrate 11 and the window substrate 13 are bonded by Au—Si eutectic bonding, the sidewall 12 is Au patterned on the element substrate 11 and the window substrate 13. As in the present embodiment, the sidewall 12 may be a substrate-like component, and may be bonded to the element substrate 11 and the window substrate 13 by a method such as direct bonding, anodic bonding, or surface activation bonding. The sidewall 12 may be integrated with the window substrate 13 or the element substrate 11 without being an independent component.

The base material of the element substrate 11 is a semiconductor material such as silicon. On the main surface of the element substrate 11, the detection element 1, its drive circuit 18, and wiring 15 are formed and arranged. The detection element 1 to be arranged is the infrared detection element 1 and is arranged or mounted on the element substrate 11 in an array. The detection element 1, the drive circuit 18, and the wiring 15 are each electrically connected in a predetermined manner. Further, the embedded wiring 16 is formed on the back surface (surface opposite to the main surface) of the element substrate 11, and the wiring 15 and the embedded wiring 16 are electrically connected. The embedded wiring 16 is drawn out to the back surface of the element substrate 11 (the back surface of the surface on which the detection element 1 is formed), and the element substrate 11 can transmit and receive electrical signals to and from the outside. Although not particularly limited, the embedded wiring 16 of this embodiment is formed by a general plating damascene method.

The element substrate 11 of the present embodiment is provided with a communication path 10. The communication path 10 communicates the first space 2 formed between the element substrate 11 and the window substrate 13 and the second space 3 formed between the element substrate 11 and the getter substrate 14. An impure gas such as a leaked gas emitted from the surface of the cavity C (the first space 2 and the second space 3) of the electronic component 100 or a leak gas entering from the outside of the electronic component 100 through the communication path 10. Is introduced into the second space 3, and when these gases reach the surface of the getter 4 that has been activated, they are physically or chemically adsorbed on the surface of the getter 4 and removed. Thus, by providing the communication path 10, the impurity gas generated in the cavity C formed by being divided between the window substrate 13, the element substrate 11, and the getter substrate 14 is removed by the getter 4, and the cavity The vacuum atmosphere or rare gas atmosphere in C can be maintained for a long period of time.

The number of communication paths 10 provided is not limited, and one or a plurality of communication paths 10 can be provided. The arrangement position of the communication path is not particularly limited, but may be provided between the arranged detection elements 1 or may be provided around the arrangement area of the detection elements 1 arranged in an array. Although the aspect of the communicating path 10 is not limited, the communicating path 10 of the present embodiment is a hole that penetrates the element substrate 11 in the thickness direction. Specifically, one end of the communication path 10 of the present embodiment opens into the first space 2 (formed between the element substrate 11 and the window substrate 13), and the other end (the element substrate 11 and the getter). It is provided so as to open in the second space 3 (formed between the substrate 14).

As a particularly preferable aspect, the communication path 10 of the present embodiment communicates the gap portion 7 formed around the detection element 1 and the second space 3. A specific aspect of the communication path 10 will be described with reference to FIG. FIG. 4 is a diagram showing a unit region of the element substrate 11 provided with one detection element 1 and one communication path 10. 4A is a diagram showing a plan view of the detection elements (infrared detection elements) 1 arranged in an array on the element substrate 11 of the electronic component 100 shown in FIG. 1, and FIG. It is the IV-IV cross section of the detection element 1 shown to the figure (A) in which the channel | path 10 was provided. FIG. 4C is a IV-IV cross section of the detection element 1 shown in FIG.

The detecting element 1 shown here is a thermopile type infrared detecting element that, when receiving infrared rays generated from an object through the window substrate 13, generates a thermoelectromotive force according to the amount of energy and quantitatively detects the infrared rays. Although it is 1, it is not limited to this.

As shown in FIG. 4A, the infrared detecting element 1 of the present embodiment includes a light receiving portion 1a that receives infrared rays to be detected, and a support beam 110 that supports the light receiving portion 1a. An infrared absorption film is formed on the upper surface of the light receiving portion 1a. The light receiving portion 1a is connected to a plurality of pairs of thermocouples (hot contacts) made of polysilicon and aluminum. The support beam 110 and the light receiving unit 1a are connected at the hot spot joint 6a, and the support beam 110 and the detection element 1 are connected at the cold spot joint 6b. Inside the support beam 110, P-type polysilicon 5a and N-type polysilicon 5b are provided as thermopile, and function as a temperature detection unit. The P-type polysilicon 5a and the N-type polysilicon 5b are arranged substantially in parallel along the longitudinal direction of the support beam 110, and are electrically connected in the order of PNPN to the aluminum wiring 6c in the light receiving portion 1a and the base frame. Are connected in series by the aluminum wiring 6d. 6e is a contact for connecting the polysilicon 5a, 5b and the aluminum wiring.

As shown in FIG. 4B, the light receiving portion 1a of the infrared detecting element 1 and the bottom surface of the support beam 110 are a silicon nitride film 8b on which thermopiles 5a and 5b are formed, and these and the inside of the light receiving portion 1a. A silicon oxide film 8c is formed so as to cover the aluminum wiring 6c, and a protective film 8d such as a silicon oxide film or a silicon nitride film covers the support beam 110 and the light receiving portion 1a on the upper surface thereof. Further, an infrared absorption film 8e is formed on the surface of the light receiving portion 1a as an infrared absorbing material.

A gap 7 is formed around the detection element (infrared detection element) 1. The gap 7 is provided in a portion facing the light receiving portion 1 a of the element substrate 11 and the support beam 110. The gap portion 7 has a function of thermally separating the light receiving portion 1a from other portions. The gap 7 is formed by wet etching such as TMAH (tetramethylammonium hydroxide) or hydrazine. Even when the detection element 1 detects a mechanical change such as a pressure sensor, the gap 7 is preferably provided.

A communication path 10 is formed below the gap 7 in the present embodiment (on the getter substrate 14 side). The communication path 10 is a hole (10) whose one end opens into the gap 7 and the other end opens into the second space. The gap 7 is formed as a part of the first space 2 formed between the element substrate 11 and the window substrate 13 or is formed so as to communicate with the first space 2. The passage (hole) 10 communicates the first space 2 and the second space 3 that can communicate with the gap 7. As in this embodiment, the communication path 10 is arranged and configured so that one end of the communication path 10 opens into the gap 7, so that an area for providing the communication path 10 is not required, and the surface of the element substrate 11 is effectively provided. Therefore, the surface area of the electronic component 100 (area of the surface parallel to the light receiving surface) can be reduced, and the electronic component 100 can be downsized and the detection element 1 can be mounted at high density.

5-7 is a figure for demonstrating the manufacturing method of the infrared detection element 1 of this embodiment provided with the communicating path 10. FIG. First, an element substrate 11 on which the infrared detection element 1 is formed is prepared. The upper surface of the infrared detecting element 1 in the first step is shown in FIG. Further, FIG. 5B shows a VV cross section when the communication path 10 of FIG. 5A is formed, and FIG. 5 shows a VV cross section when the communication path 10 of FIG. 5A is not formed. (C). As shown in FIGS. 5A, 5B, and 5C, a polysilicon etching sacrificial layer 8a is deposited on the entire surface of the silicon element substrate 11 surrounded by the base frame. In order to make it possible to select a region in the element substrate 11 and the polysilicon etching sacrificial layer 8a where the void 7 is not formed, B (boron) is implanted (implanted) into a predetermined region to form a stopper polysilicon 8as. Further, a stopper polysilicon 8as is formed on the lower side of the substrate where the communication path 10 is not formed.

  The upper surface of the infrared detection element 1 in the second step is shown in FIG. 6A, and the VI-VI cross section of FIG. 6A is shown in FIG. In the second step, after the silicon nitride film 8b is formed on the polysilicon etching sacrificial layer 8a (light receiving side), the P-type polysilicon 5a and the N-type polysilicon 5b are formed as the thermopile. After the silicon oxide film 8c is deposited so as to cover the polysilicons 5a and 5b, aluminum wirings 6c and 6d are formed and connected in series with the P-type polysilicon 5a and the N-type polysilicon 5b through the contacts 6e. Then, a protective film, for example, a silicon nitride film 8d is formed.

  The upper surface of the infrared detecting element 1 in the third step is shown in FIG. Furthermore, the VII-VII cross section of FIG. 7A when the communication path 10 is formed is shown in FIG. 7B, and the VII-VII cross section of FIG. 7A when the communication path 10 is not formed is shown in FIG. (C). In the third step, a slit 9 for separating the support beam 110 and the light receiving portion 1a is formed by anisotropic etching such as RIE (reactive ion etching) to expose the polysilicon etching sacrificial layer 8a. . Through this slit 9, a strong alkali etching solution such as hydrazine is applied to etch the polysilicon etching sacrificial layer 6a in a region where the stopper polysilicon 8as is not formed isotropically. Since the etching proceeds isotropically in the polysilicon etching sacrificial layer 8a, when immersed in the etching solution, the polysilicon etching sacrificial layer 8a other than the etching stopper 8as is first melted, and the single crystal in the region where the void portion 7 is formed. The (100) surface of the silicon element substrate 11 is exposed. When the etching of the silicon element substrate 11 with the (100) surface exposed is further advanced, a quadrangular pyramid-shaped cavity 7 with an exposed (111) surface and the communication path 10 are formed (the cross section is shown by a broken line 7a). ). This is because the etching rate of the (111) plane of the silicon element substrate 11 is extremely slower than the etching rate of the (100) plane of the silicon element substrate 11 in the etching with the alkaline etching solution.

In the case where the communication path 10 is not provided, etching is performed until the quadrangular pyramid-shaped gap portion 7 indicated by the broken line 7c in FIG. 7C is formed. Since the lower side of the silicon element substrate 11 is covered with the stopper polysilicon 8as, it is not etched and only the upper side is etched to form only the gap 7. The light receiving part 1a and the support beam 110 are both thermally separated from the element substrate 11. It becomes the structure made.

A layer of an infrared absorption film 8e is deposited on the upper surface of the light receiving unit 1a. By performing these steps, the communication substrate 10 shown in FIG. 4 is formed, and the element substrate 11 on which the infrared detection element 1 is mounted can be obtained.

Since the infrared detecting element 1 after etching is vulnerable to physical damage, the embedded wiring 16 is appropriately formed by a plating damascene method or the like before the etching process.

Returning to FIGS. 1 to 3, the getter substrate 14 will be described. A getter 4 is mounted on the getter substrate 14. Although the base material of the getter substrate 14 is not particularly limited, it is preferable to employ an insulating material such as glass from the viewpoint of simplifying the manufacturing process because it is necessary to ensure insulation between the wirings. Further, even if silicon having low insulating properties is used, it can be employed if high-temperature overheat treatment is performed in an oxygen atmosphere to form an oxide insulating film.

The getter substrate 14 has getter substrate wirings 17 penetrating the getter substrate 14. The getter substrate wiring 17 is formed by filling a through hole formed in the getter substrate 14 using a laser or sand blast with a plating metal such as Cu or Ni using a damascene plating method or the like. The plating metal is preferably a metal having a melting point higher than the activation temperature of the getter used. The cross-sectional shape of the formed getter substrate wiring 17 is not particularly limited, and may be a circular cross section or a polygonal cross section.

The getter 4 mounted on the getter substrate 14 has a function of adsorbing gas inside a sealed package type electronic component. The getter 4 is a gas that causes deterioration of the vacuum atmosphere or rare gas atmosphere inside the package, such as an emitted gas released from the inner surface of the package or an impure gas such as a leak gas entering from the outside, and deteriorates the performance of the electronic component. To adsorb. Although not particularly limited, the getter 4 of this embodiment uses a porous alloy of zirconia, vanadium, iron, or the like. Depending on the type, when activation treatment (heat treatment) is performed at a temperature of about 300 ° C. to several hundred ° C., the function as a getter is exhibited, and adsorption of inert gas and moisture is started. The communication path 10 communicates the first space 2 formed between the element substrate 11 and the window substrate 13 and the second space 3 formed between the element substrate 11 and the getter substrate 14. Impurity gas existing in the space (first space 2 and second space 3) in the package divided into two by the substrate 11 can be adsorbed by the getter 4.

In the present embodiment, the getter 4 is disposed on the side opposite to the light receiving side of the element substrate 11. The film-like or plate-like getter 4 is arranged so as to be substantially parallel to the element substrate 11. Although the method for mounting the getter 4 is not particularly limited, in this embodiment, the getter 4 is obtained by digging a substantially central portion of the getter substrate 14 by blasting, etching, or the like, and depositing a metal functioning as the getter 4 on the digged portion. Is mounted on the getter substrate 14. Incidentally, the getter 4 is activated by heating only the getter substrate 14 in a vacuum.

FIG. 8 shows an outline of a method for manufacturing the electronic component 100 shown in FIGS. First, the window substrate 13, the element substrate 11, and the getter substrate 14 are prepared. The window substrate 13 and the element substrate 11 are joined via the sidewall 12. As a bonding method, a method such as direct bonding, anodic bonding, or surface activated bonding can be used in accordance with the material and surface state of the window substrate 13, the element substrate 11, and the sidewall 12.

Next, the getter substrate 14 on which the getter substrate wiring 17 is formed and the element substrate 11 are directly bonded, anodic bonded, surface activated bonding, or the like in a reduced pressure vacuum chamber maintained in a vacuum or rare gas atmosphere. It joins and the electronic component 100 shown in FIGS. 1-3 is obtained.

In this example, the method of bonding the element substrate 11 and the getter substrate 14 in vacuum after the window substrate 13, the sidewall 12 and the element substrate 11 are bonded first is described. After the substrate 14 is bonded, the getter substrate 14 and the element substrate 11 or the sidewall 12 may be bonded in a vacuum.

The electronic component 100 according to the present embodiment is provided with the communication path 10 that allows the first space 2 and the second space 3 to communicate with each other, so that the window substrate 13 is disposed opposite to the light receiving side of the element substrate 11. A structure in which the getter substrate 14 is disposed opposite to the light receiving side may be employed. As a result, it is possible to provide an electronic component that realizes downsizing while increasing the amount of getters mounted.

Further, with such a configuration, since the wiring can be drawn from the lower surface of the electronic component package, the area after chip stack mounting can be reduced, and the electronic component 110 can be downsized. . In particular, the area occupied by the surface along the light receiving surface can be reduced. Compared with a packaged electronic component in which the wiring is drawn from the light receiving window side, the wiring length can be shortened, which is advantageous for high-speed operation. In addition, since a region for wiring is not necessary, the size can be reduced. These advantages are particularly remarkable when the chip stack configuration is adopted.

Since the getter 4 of this embodiment is disposed on the side opposite to the light receiving side of the element substrate 11, it does not block the incidence of infrared rays to be detected, and a large number of getters are mounted without being restricted by layout. Can do. That is, the amount of getters that can be mounted per volume of the electronic component 100 can be made larger than that of a conventional device (for example, a getter disposed between an element substrate and a window substrate). Further, since the getter 4 of this embodiment is arranged in a film shape or a plate shape, the getter surface area with respect to the amount of getter to be mounted is increased, that is, the contact area of the gas in the getter 4 and the cavity C (per cavity volume). The getter area can be increased, so that the adsorption performance of impure gas can be improved. From the above, the electronic component 100 according to the present embodiment can continue the adsorption of impure gas generated inside the electronic component package efficiently and for a long time, and can extend the normal operation life of the electronic component.

Second Embodiment
The electronic component 110 according to the present embodiment has a structure in which the window substrate 13, the element substrate 11, and the getter substrate 14 are stacked in the same manner as the electronic component 100 according to the first embodiment, and the embedded wiring 16 and the getter substrate wiring 17. It is characterized in that conductive bumps 19 are disposed between the two.

In the electronic component 100 of the first embodiment, the embedded wiring 16 provided on the element substrate 11 and the getter substrate wiring 17 provided on the getter substrate 14 are directly connected. When these wirings are formed by the plating damascene method, the polishing amount varies depending on the mechanical characteristics of the substrate material and the wiring material in the CMP (Chemical Mechanical Polishing) process of the same method. It is difficult to flatten the height of the substrate, and for example, the substrate material portion tends to be recessed or the wiring material portion tends to be recessed. For this reason, when the element substrate 11 and the getter substrate 17 are bonded, problems often arise in that the element substrate 11 and the getter substrate 17 are bonded together, or the embedded wiring 16 and the getter substrate wiring 17 cannot be electrically connected. It was.

The present embodiment solves such a problem.

Since the structure of the electronic component 110 according to the present embodiment is basically the same as the structure of the electronic component 100 according to the first embodiment, the description of the parts common to the first embodiment is omitted, and different parts are mainly described. To do.

FIG. 9A shows the getter substrate 14 in which conductive bumps 19 are arranged on the end portion of the getter substrate wiring 17 before being bonded to the element substrate 11, and FIG. 2 is a cross-sectional view of the getter substrate 14 taken along the line IX-IX. As shown in FIG. 9B, the getter substrate wiring 17 of this embodiment has a getter substrate wiring 17 penetrating therethrough in the thickness direction. The end of the getter substrate wiring 17 on the element substrate 11 side is connected to the embedded wiring 16 provided on the element substrate 11 via the bump 19, and the end of the other end of the getter substrate wiring 17 (the bottom surface side of the getter substrate 14). Is electrically connected to the outside. The detection element 1 exchanges electric signals with the outside through the embedded wiring 16, the bump 19, and the getter substrate wiring 17.

A material that is soft and easily deformed is preferably used for the bump 19. A metal such as Au, Sn, or In or a conductive paste is soft and easily deformed, and is therefore suitable for the bump 19 of this embodiment.

Before joining the getter substrate 14 and the element substrate 11, the position of the end portion of the getter substrate wiring 17 on the element substrate 11 side is farther from the element substrate 11 than the position of the surface of the getter substrate 14 in surface contact with the element substrate 11. It is preferable that the position is the same. The end portion of the getter substrate wiring 17 is positioned below the bonding surface of the getter substrate 14 in contact with the element substrate 11 (getter substrate 14 side, opposite to the element substrate 11). Since the end of the getter substrate wiring 17 is positioned below the bonding surface (with the element substrate 11) of the getter substrate 14, the bonding surface of the getter substrate 14 (with the element substrate 11) from the end of the getter substrate wiring 17 A cavity is formed in between. Metal bumps 19 are disposed in the cavities. Although not particularly limited, as shown in FIG. 9B, a bump accommodating recess 19a for accommodating the bump 19 is formed around the end of the getter substrate wiring 17 on the element substrate 11 side. As shown in FIG. 9B, the position (d2) of the end portion on the element substrate 11 side of the getter substrate wiring 17 is more than the position (d1) of the surface of the getter substrate 14 in surface contact with the element substrate 11. It is preferable that it is a position separated to the 14th side. That is, the height of the getter substrate wiring 17 (height along the thickness direction of the getter substrate 14 (h2)) is the height of the bonding surface between the getter substrate 14 and the element substrate 11 (height along the thickness direction of the getter substrate 14 ( It is preferable to make it lower than h1).

  On the other hand, the position (d3) of the end portion on the element substrate 11 side of the bump 19 before joining the getter substrate 14 and the element substrate 11 is based on the position (d1) of the surface of the getter substrate 14 in surface contact with the element substrate 11. However, it is preferably convex toward the element substrate 11 side. When pressure is applied when these substrates are bonded, the bumps 19 protruding from the bonding surface are crushed and deformed, and the embedded wiring 16 and the getter substrate wiring 17 are reliably connected by its elasticity.

  Although FIG. 9 shows an example in which the bumps 19 are provided on the getter substrate 14, the element substrate 11 and the getter 14 can be used as long as the height relationship among the bumps 19, the element substrate 11, and the getter substrate 14 can be satisfied. Bumps 19 may be provided on the element substrate 11 before the substrate 14 is bonded.

The manufacturing method of the electronic component of 2nd Embodiment is demonstrated based on FIG.

Similar to the first embodiment, the window substrate 13 is prepared, and the element substrate 11 is prepared in which the infrared element 1 is provided and the embedded wiring 16 that can be electrically connected to the infrared element 1 is provided. The prepared window substrate 13 and the element substrate 11 are bonded by a technique such as direct bonding, anodic bonding, or surface activation bonding.

Getter substrate wirings 17 are formed on the getter substrate 14. Similar to the first embodiment, the film of the getter 4 is formed. A through-hole penetrating in the thickness direction is formed in the getter substrate 14 using a laser or sandblast. At this time, in the present embodiment, the recess 19a for accommodating the bump is formed around the end of the through hole in which the getter substrate wiring 17 is formed on the side of the joint surface (the side of the joint surface with the element substrate 11). Although the formation method of the recessed part 19a is not specifically limited, In this embodiment, fine processing techniques, such as a laser and sandblasting, or an etching technique is used. The formed through-hole is filled with a plating metal such as Cu or Ni using a damascene plating method or other methods. The getter substrate wiring 17 may be formed by filling all the through holes with metal. However, the position of the end portion on the element substrate 11 side of the getter substrate wiring 17 of the present embodiment is in surface contact with the element substrate 11. The position is separated from the surface of the substrate 14 toward the getter substrate 14. Although not particularly limited, when the above-described recess 19a is provided, the position (height) of the bottom of the recess 19a is substantially the same as the position (height) of the end of the getter substrate wiring 17 filled with metal. (Height). As described above, the end portion of the getter substrate wiring 17 is shortened toward the getter substrate side, and the recess 19 a is provided around the end portion of the getter substrate wiring 17, so that the getter substrate wiring 17 and the embedded wiring 16 of the element substrate 11 are connected. A space can be provided between them.

Although FIG. 9 shows an example in which the concave portion 19a is provided on the getter substrate 14 side, the concave portion 19a may be provided on the element substrate 11 side.

Bumps 19 are disposed at the end of the getter substrate wiring 17 on the element substrate 11 side. The bumps 19 are arranged in a space formed between the getter substrate wiring 17 and the embedded wiring 16 of the element substrate 11.

If the bump 19 is a metal material having a melting point lower than the getter activation temperature, or is solidified by heat like a conductive paste, the bump 19 is applied by a dispenser or a ball bonder after the getter activation process by heat treatment. 19 is formed. In order to protect the activated getter 4, it is performed in a vacuum or a rare gas atmosphere.

The getter 4 is activated and the getter substrate 14 on which the bumps 19 are arranged and the element substrate 11 bonded to the window substrate 13 are bonded by a technique such as direct bonding, anodic bonding, and surface activation bonding.

Through the above steps, an electronic component 110 shown in the lower part of FIG. 10 can be obtained. By arranging the bumps 19 between the embedded wiring 16 and the getter substrate wiring 17, the window substrate 13 is arranged on the light receiving side of the element substrate 11, and the getter substrate 14 is arranged on the side opposite to the light receiving side of the element substrate 11. To provide an electronic component that secures the connectivity between the embedded wiring 16 of the element substrate 11 and the getter substrate wiring 17 of the getter substrate 14 while adopting the above-described structure, increasing the amount of getters mounted, and realizing downsizing. Can do.

As shown in FIG. 10, when pressed from the window substrate 13 side and the getter substrate 14 side, the bumps 19 disposed between them are deformed and spread in the lateral direction, but the bumps 19 are at the end of the getter substrate wiring 17. And the embedded wiring 16 of the element substrate 11 and the bump receiving recess 19a accommodate the bump 19 in the space between the getter substrate 14 and the element substrate 11. Thereby, it can prevent that a joint surface is contaminated.

With such a configuration, wiring can be drawn from the lower surface of the package of the electronic component, so that the area after chip stack mounting can be reduced and the electronic component 110 can be downsized. In particular, the area occupied by the surface along the light receiving surface can be reduced. Compared with a packaged electronic component in which the wiring is drawn from the light receiving window side, the wiring length can be shortened, which is advantageous for high-speed operation. In addition, since a region for wiring is not necessary, the size can be reduced. These advantages are particularly remarkable when a chip stack configuration is used.

<Third Embodiment>
The electronic component 120 according to the third embodiment is characterized by a manufacturing method. After the getter substrate 14 is hermetically bonded to the element substrate 11 bonded to the window substrate 13, the conductive material is formed after the getter substrate wiring 17 is formed. (Molten metal, conductive paste) is filled.

Similarly to the second embodiment, in the present embodiment, when the element substrate 11 and the getter substrate 17 are bonded, the bonding between the element substrate 11 and the getter substrate 17 occurs in the first embodiment. This solves the problem that the wiring 16 and the getter substrate wiring 17 cannot be electrically connected well.

Since the structure of the electronic component 120 of the third embodiment is common to the structure of the electronic component 100 of the first embodiment shown in FIGS. 1 to 3, the description of the structure of the electronic component 120 is omitted here, and the manufacturing is performed. The method will be mainly described.

  A method for manufacturing the electronic component 120 of this embodiment will be described with reference to FIG.

First, similarly to the first embodiment, an element substrate 11 provided with a window substrate 13 and an infrared element 1 and an embedded wiring 16 that can be electrically connected to the infrared element 1 is prepared. The prepared window substrate 13 and the element substrate 11 are bonded via the sidewall 12. The window substrate 13 and the element substrate 11 which are joined are shown on the upper side of FIG. In this example, the window substrate 13 and the element substrate 11 are bonded first, and then the element substrate 11 and the getter substrate 14 are bonded. However, the bonding order is not limited thereto, and the getter substrate 14 is not limited thereto. The element substrate 11 may be bonded first, and then the element substrate 11 and the window substrate 13 may be bonded.

Before and after this, a getter substrate 14 on which a film of the getter 4 is formed is prepared. The formation method of the getter 4 is the same as that of the first embodiment. A getter substrate wiring through-hole 17a is formed in the getter substrate 14 so as to penetrate in the thickness direction. The formation method of the getter substrate wiring through hole 17a is not particularly limited, and in this embodiment, a fine processing technique such as laser or sandblasting or an etching technique can be used. The prepared getter substrate 14 is shown on the lower side of FIG.

Next, as shown in FIG. 11B, the element substrate 11 bonded to the window substrate 13 and the getter substrate 14 in which the getter substrate wiring through hole 17a is formed and the getter 4 is activated are bonded in vacuum. To do.

The one after the bonding process shown in FIG. 11B is inverted so that the opening of the getter substrate wiring through hole 17a faces upward as shown in FIG. 11C. As shown in FIG. 11C and FIG. 11D, metal plating is applied to the inner surface of the through hole 17a for the getter substrate wiring penetrating through the plating technique, the patterning technique and the polishing technique, and then the getter board wiring penetration is performed. The hole 17a is filled with molten metal or conductive paste, which is a conductive material. The conductive material 17 b may have a melting point lower than the activation temperature of the getter 4. The getter substrate wiring through hole 17a filled with the conductive material 17b has the same function as the getter substrate wiring 17 of the first embodiment.

Thus, like the electronic component of the first embodiment, the window substrate 13 is disposed on the light receiving side of the element substrate 11 and the getter substrate 14 is disposed on the side opposite to the light receiving side of the element substrate 11. In addition, it is possible to provide the electronic component 120 that secures the connectivity between the embedded wiring 16 of the element substrate 11 and the getter substrate wiring 17 of the getter substrate 14 and realizes downsizing while increasing the amount of getters mounted.

Moreover, since the electronic component 120 of this embodiment can draw out wiring from the lower side (opposite to the light receiving direction), the surface area after mounting of the electronic component 120 (surface area on the light receiving side) can be reduced. It can be downsized. In addition, the getter substrate wiring 17 can be formed without providing the step of forming the bumps 19 as in the second embodiment, and electrical signals can be input to and output from the detection element 1.

The embodiment described above is described for facilitating the understanding of the present invention, and is not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

FIG. 1 is a perspective view from the perspective direction of the electronic component of the first embodiment. FIG. 2 is a cross-sectional configuration diagram of the electronic component of the first embodiment. FIG. 3 is an exploded perspective view of the electronic component of the first embodiment. 4A is a plan view of a detection element mounted on the electronic component of the first embodiment, and FIG. 4B is a cross-sectional view taken along the line IV-IV in FIG. FIG. 5A is a plan view of the first step of the detection element manufacturing process, and FIG. 5B is a cross-sectional view taken along the line VV in FIG. FIG. 6A is a plan view of the second step of the detection element manufacturing process, and FIG. 6B is a cross-sectional view taken along the line VI-VI in FIG. FIG. 7A is a plan view of a third step of the detection element manufacturing step, and FIG. 7B is a sectional view taken along line VII-VII in FIG. FIG. 8 is a view for explaining the electronic component manufacturing method of the first embodiment. FIG. 9A is a perspective view from the perspective direction of the getter substrate of the second embodiment, and FIG. 9B is a cross-sectional view taken along the line IX-IX in FIG. FIG. 10 is a diagram for explaining the method of manufacturing the electronic component of the second embodiment. 11A to 11D are views for explaining a method for manufacturing an electronic component of the third embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100,110,120 ... Electronic component 1 ... Element, infrared detector 2 ... 1st space 3 ... 3rd space 4 ... Getter 5a ... P-type polysilicon 5b ... N-type polysilicon 6a ... Warm-point junction 6b ... Cold spot Junction cavity 7 ... void 9 ... slit 10 ... communication path 11 ... element substrate 12 ... side wall 13 ... window substrate 14 ... getter substrate 15 ... wiring 16 ... embedded wiring 17 ... getter substrate wiring 17a ... getter substrate wiring hole 17b ... conductive material 18 ... driving circuit 19 ... bump 19a ... bump receiving recess

Claims (6)

A packaged electronic component in which a detection element is mounted in a cavity in a vacuum atmosphere,
An element substrate on which a detection element is disposed;
A window substrate disposed on the light receiving side of the element substrate;
A getter substrate on which a getter is mounted and disposed on the side opposite to the light receiving side of the element substrate;
E Bei and a communication passage for communicating the second space formed between the first space formed between the element substrate and the getter substrate between said device substrate and the window substrate,
The getter substrate is provided with getter substrate wiring that penetrates the getter substrate in the thickness direction and is electrically connected to the outside, and the element substrate is electrically connected to a detection element mounted on the element substrate. Embedded wiring connected to the
A package type electronic component , wherein conductive bumps are provided between an end of the getter substrate wiring on the element substrate side and the embedded wiring . 2. The electronic component according to claim 1 , wherein the position of the end portion on the element substrate side of the getter substrate wiring is a position separated from the surface of the getter substrate in surface contact with the element substrate toward the getter substrate side. The electronic component according to claim 2 , wherein a recess for accommodating the conductive bump is formed around an end portion of the getter substrate wiring on the element substrate side. 4. The communication path according to claim 1, wherein the communication path is provided in the element substrate, and has one or more holes having one end opened in the first space and the other end opened in the second space . The electronic component according to one item . A gap is formed around the detection element,
The electronic component according to any one of claims 1 to 4, wherein the communication path communicates the gap and the second space. A method for manufacturing a packaged electronic component in which a detection element is mounted in a cavity in a vacuum atmosphere,
Preparing a window substrate;
Providing an element substrate on which a detection element is provided and an embedded wiring electrically connected to the provided detection element is formed;
Preparing a getter board on which a getter board is mounted and a getter board wiring electrically connectable to the outside is provided in the thickness direction;
Disposing conductive bumps between the element substrate side end of the getter substrate wiring and the embedded wiring;
Heating the getter substrate in a vacuum or inert gas atmosphere to activate the getter;
Bonding the getter substrate on which the conductive bumps are disposed and the element substrate;
Joining the prepared window substrate and the element substrate before and after joining the getter substrate and the element substrate ;
A method of manufacturing a packaged electronic component having

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