JP2009111054A - Optical semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly efficient optical semiconductor device. <P>SOLUTION: An optical semiconductor device has a light-emitting or light-receiving element 3 and a window member 2 which is arranged on the element 3 in opposition thereto and which comprises a semiconductor material. In the optical semiconductor device, the window member 2 comprises a compound 20 of an element constituting the semiconductor material and a hydrogen element. The hydrogen element content of the lower surface of the window member 2 is desirably higher than that of the upper surface of the window member 2. The optical semiconductor device desirably further has a spacing member 1 for specifying a space between the element 3 and the window member 2. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an optical semiconductor device.

  Conventionally, as one of optical semiconductor devices, there is an infrared detection device that detects infrared rays. For example, the thing of the structure shown by sectional drawing in FIG. 2 was used. That is, as shown in FIG. 2, the conventional infrared detecting device is composed of a base body 21 and a window member 22, and the outer shape is a rectangular parallelepiped shape.

The base 21 is composed of a laminated ceramic, a pattern, and a through hole for providing a path for electrically connecting the inside and the outside of the container, for example, an alumina (Al ₂ O ₃ ) sintered body or aluminum nitride (AlN). This is a ceramic package made of a sintered material.

  The base 21 has a side wall 21d, and an infrared detection element 23 for detecting infrared rays is disposed in an opening formed by the side wall 21d with the light receiving surface 23a facing upward. The infrared detection element 23 is bonded or soldered on the mounting portion 21a of the base 21.

  Further, a step is provided on the inner surface of the side wall 21d, and a bonding wire 25 that connects the wiring conductor 24 and the infrared detection element 23 at the step is provided.

The flat window member 22 is made of, for example, germanium (Ge) or silicon (Si) that transmits infrared rays, and is hermetically bonded to the side wall 21d of the base 21 using a window bonding material 27 such as solder. The opening of the base 21 formed by the side wall 21d is sealed. The window member 22 is disposed at a position facing the light receiving surface 23a of the infrared detection element 23 (see, for example, Patent Document 1).
JP 2003-254820 A

  However, the conventional infrared detection device has a problem that the detection performance of infrared rays is particularly deteriorated.

  The present invention has been devised in view of the above problems, and an object thereof is to provide a high-performance optical semiconductor device.

  An optical semiconductor device according to the present invention is an optical semiconductor device comprising: an element that emits or receives light; and a window member that is disposed opposite to the element and includes a semiconductor material. It includes a compound of an element constituting a semiconductor material and a hydrogen element.

  In the window member, the lower surface of the window member preferably has a higher content of the hydrogen element than the upper surface.

  Moreover, it is preferable to further have a spacer member that defines an interval between the element and the window member.

  Further, it is preferable that an airtight space is formed by the upper surface of the element, the lower surface of the window member, and the side surface of the spacer member.

  Moreover, it is preferable that the said spacer member is ceramics.

  The airtight space is preferably filled with hydrogen gas.

  The semiconductor material is preferably made of germanium or silicon.

  The element is preferably an infrared light receiving element.

  The optical semiconductor device of the present invention is an optical semiconductor device comprising an element that emits light or receives light, and a window member that is disposed on the element so as to face the element and includes a semiconductor material. The window member includes the semiconductor It includes a compound of an element constituting the material and a hydrogen element.

  By adopting such a configuration, it is possible not only to reduce the defective part in the window member by the passivation effect by simply adding the hydrogen element to the element constituting the semiconductor material, but also when the element receives light, for example, light Light incident on the element from the outside of the semiconductor device through the window member is transmitted through the window member whose refractive index is lowered by the hydrogen element. Therefore, it is possible to prevent the incident light from being reflected by the window member, and to allow the incident light to enter the element while maintaining a sufficient light intensity.

  On the contrary, when the element emits light, that is, light emitted from the element to the outside of the optical semiconductor device through the window member also passes through the window member whose refractive index is lowered by the hydrogen element. Therefore, it is suppressed that the outgoing light is reflected by the window member, and the reflected light is incident on the element again, so that the operation of the element becomes unstable or the light intensity of the outgoing light becomes insufficient. Can be suppressed.

  The window member preferably has a lower content of the hydrogen element on the lower surface of the window member than the upper surface, and can suppress the reflection of incident light or emitted light in the vicinity of the element. An optical semiconductor device having light intensity can be obtained.

  Further, it is preferable to further include a spacer member for defining a distance between the element and the window member, and the element and the window member are in contact with each other by the spacer member, and the hydrogen element is removed from the window member by the friction. Can be suppressed.

  In addition, it is preferable that an airtight space is formed on the upper surface of the element, the lower surface of the window member, and the side surface of the spacer member, and it is preferable because incident light hits the side surface of the spacer member and easily enters the element. The light can be incident on the element. On the other hand, also in the case of emitting light, with this configuration, the light can have directivity by applying reflected light to the side surface of the spacer member.

  In addition, the spacer member is preferably a ceramic, and the spacer member can be suitably manufactured to a desired dimension by, for example, a ceramic green sheet lamination method.

  The hermetic space is preferably filled with hydrogen gas, can sufficiently form a compound of an element constituting the semiconductor material and the hydrogen element, and bends on the lower surface of the window member. Since the refractive index of the airtight space can be made closer to the rate, it is possible to further suppress the reflection of light between the window member and the airtight space.

  In addition, the semiconductor material is preferably made of germanium or silicon, and has a stronger connection with a hydrogen element than other semiconductor elements, so that a compound of an element constituting the semiconductor material and a hydrogen element can be further formed. it can.

  The element is preferably an infrared light receiving element, and can be an optical semiconductor device capable of detecting infrared light with high accuracy.

  Hereinafter, the optical semiconductor device of the present invention will be described in detail.

  An optical semiconductor device according to the present invention is shown in FIG. FIG. 1A is a sectional view showing an example of an embodiment of the optical semiconductor device of the present invention, and FIG. 1B is a sectional view showing another example of the embodiment of the optical semiconductor device of the present invention.

  In the figure, 1 is a spacer member (base), 1a is a mounting portion, 1b is a through hole, 1c is a protrusion, 2 is a window member, 3 is an element, 6 is a lid, 6a is a metal frame, and 20 is a semiconductor. It is a compound of an element constituting the material and a hydrogen element (hereinafter referred to as a hydrogen compound).

  As shown in FIG. 1, an optical semiconductor device according to the present invention is an optical semiconductor device including an element 3 that emits or receives light and a window member 2 that is disposed on the element 3 so as to face the element 3 and includes a semiconductor material. The window member 2 includes a compound (hydrogen compound) 20 of an element and a hydrogen element constituting the semiconductor material.

(Window member)
The window member 2 includes a semiconductor material such as germanium (Ge) or silicon (Si). The element 3 is preferably made of single-crystal germanium or single-crystal silicon, and the light transmitted through the window member 2 can be suppressed from being diffused by impurities contained in the crystal grain boundary. And can transmit light from the element 3 to the outside with high accuracy. Alternatively, a hydrogen compound 20 described later may be formed by blowing a hydrogen element onto the window member 2 in advance.

  In the window member 2, the lower surface of the window member 2 preferably has a higher hydrogen element content than the upper surface, and the reflection of incident light or emitted light in the vicinity of the element 3 can be suppressed. An optical semiconductor device having

  What is necessary is just to measure based on the Abbe method using "DR-M2" by Atago Co., Ltd., in order to confirm the magnitude relationship of the refractive index of the window member 2 concerning this invention, and the window member which consists of semiconductor materials. In other words, the refractive index of the window member 2 made of only a semiconductor material is the same as that of the window member 2 according to the present invention based on the elements constituting the semiconductor material detected by the SIMS device described later. What is necessary is just to measure based on the Abbe method using "DR-M2" manufactured.

  In order to confirm that the hydrogen compound 20 is contained in the window member 2, a conventionally known SIMS (Secondary Ion Mass Spectrometry) device, an atomic pore device, or the like can be used. In the method for confirming the hydrogen compound 20, first, the presence or absence of an element constituting the semiconductor material is confirmed from the lower surface of the window member toward the upper surface of the window member. Next, at the depth position where the element constituting the semiconductor material is detected, the presence or absence of a hydrogen element may be confirmed in a region of 5 mm × 5 mm, for example. Further, it is preferable to use a SIMS device because it can be detected as the state of the hydrogen compound 20.

  Here, the window member 2 is provided on a lower surface of a protruding portion 1c of the base body 1 described later via a window bonding material 7 such as gold (Au) -tin (Sn) brazing or gold (Au) -germanium (Ge) brazing. It is airtightly joined, and the lower side of the through hole 1b of the base 1 is airtightly closed by the window member 2 to form an airtight container.

(element)
For example, a diode-type or bolometer-type semiconductor element can be used as the element 3, and the element 3 is mounted and fixed on the upper main surface of the protruding portion 1 c via an element bonding material 8. The element bonding material 8 is made of gold-tin brazing, gold-germanium brazing, silver (Ag) -tin (Sn) brazing, resin adhesive or the like having a melting point equal to or lower than that of the window bonding material 7.

  The element 3 is air-tightly closed by the window member 2 on the lower side of the through hole 1b of the base body 1 and then mounted and fixed to the mounting portion 1a formed on the upper surface of the protruding portion 1c via the element bonding material 8. Thereby, the airtight space formed, for example by the window member 2, the protrusion part 1c, and the element 3 is formed.

  The airtight space is preferably filled with hydrogen gas, the hydrogen compound 20 can be sufficiently formed, and the refractive index of the airtight space can be made closer to the refractive index of the lower surface of the window member 2. It can suppress that light reflects more between the window member 2 and airtight space.

  In order to confirm the presence of hydrogen gas, for example, using a quadrupole mass spectrometer (QMI 422 type) manufactured by Pfefavacum, it conformed to the US MIL standard (MIL-STD-883E Method 1018.3). The package built-in gas may be analyzed.

  Note that since the airtight space is a gas such as a vacuum or hydrogen gas, the refractive index is clearly lower than that of the semiconductor material or the hydrogen compound 20.

  In addition, after the element 3 is mounted and fixed on the mounting portion 1 a via the element bonding material 8, the electrode of the element 3 provided on the upper surface of the element 3 is attached to the wiring conductor 4 provided on the shelf 1 e of the base 1. Electrical connection is made through electrical connection means 5 such as a bonding wire. Then, the lid 6 is bonded to the upper surface of the substrate 1 in a vacuum or a nitrogen or inert gas atmosphere, and the package is hermetically sealed in a state where the interior of the package is held in a vacuum or nitrogen or inert gas atmosphere.

(Spacer member)
It is preferable to further include a spacer member 1 that defines a distance between the semiconductor element 5 and the window member 2. The element 3 and the window member 2 are in contact with each other by the spacer member 1, and the hydrogen element is removed from the window member 2 by the friction. Can be suppressed.

Further, it is preferable that an airtight space is formed on the upper surface of the element 3, the lower surface of the window member 2, and the side surface of the spacer member 1,
Since incident light hits the side surface of the spacer member 1 and easily enters the element 3, the light can be preferably incident on the element 3. On the other hand, also in the case of emitting light, with this configuration, directivity can be given to the light by applying reflected light to the side surface of the spacer member 1.

The spacer member 1 is made of alumina (Al ₂ O ₃ ) ceramics, aluminum nitride (AlN) ceramics, mullite (3Al ₂ O ₃ · 2SiO ₂ ) ceramics, resin, glass, or the like.

  The spacer member 1 is preferably made of ceramic from the viewpoint of dimensional accuracy. For example, when the spacer member 1 is made of alumina ceramics, the spacer member 1 is manufactured as follows.

First, a suitable organic binder, a plasticizer, a dispersing agent, a solvent, etc. are added to and mixed with raw material powders such as alumina, silicon oxide (SiO ₂ ), calcium oxide (CaO), magnesium oxide (MgO) to form a slurry. At this time, if the slurry is made into a slurry in a hydrogen atmosphere, the slurry material can contain a hydrogen element. Moreover, hydrogen element can be adsorbed on the slurry material. A plurality of ceramic green sheets are obtained by forming this into a sheet shape by a conventionally known doctor blade method or calendar roll method.

  Next, an appropriate punching process is performed on these ceramic green sheets to form punched portions that become the through holes 1b, the protruding portions 1c, the side walls 1d, and the shelf portions 1e. A conductive paste prepared by mixing an appropriate binder and solvent with metal powder such as tungsten (W), molybdenum (Mo), manganese (Mn), etc., which will be the wiring conductor 4, is formed on the upper surface of the shelf 1 e. A conductive paste layer to be the wiring conductor 4 is formed on the upper surface of the shelf 1e by printing and applying a predetermined pattern at a predetermined position by a screen printing method or the like. The ceramic green sheets on which the punched portions and the conductor paste layer are formed are stacked and fired at a temperature of about 1600 ° C. in a reducing atmosphere to form a wiring conductor 4 made of a metallized metal layer. The substrate 1 is manufactured.

  Further, in the spacer member 1 made of ceramics, the metallization made of tungsten, molybdenum, manganese, etc., similar to the wiring conductor 4, is used for the joint portion of the window member 2, which will be described later, the mounting portion 1a of the element 3, and the joint portion of the lid 6. A metal layer is preferably deposited. With this configuration, the window member 2, the element 3 and the lid 6 can be firmly bonded and fixed using the window bonding material 7, the element bonding material 8 and the lid bonding material 9, respectively.

  The through hole 1b of the base body 1 has a protruding portion 1c protruding inward over the entire circumference on the inner surface of the through hole 1b, and the element 3 is placed on the upper surface of the protruding portion 1c so as to close the through hole 1b. It has the mounting part 1a. Moreover, the window member 2 is joined so that the through-hole 1b of the lower surface of the protrusion part 1c may be plugged and it may oppose the mounting part 1a. Here, the protrusion part 1c has a role of a spacer.

  As described above, since the spacer member 1 is made of ceramics, the window member 2 is insulated from the spacer member 1 even when the window member 2 including the semiconductor material is joined, and unnecessary electric power is applied to the window member 2. It is possible to prevent the signal from being conducted, and to prevent unnecessary electromagnetic noise from being placed on the infrared rays transmitted through the window member 2.

  In addition, at the location where the lid 6 on the upper surface of the substrate 1 is joined, preferably an iron (Fe) -nickel (Ni) -cobalt (Co) alloy or an iron-nickel alloy as shown in FIG. It is preferable that a metal frame 6a made of a metal such as is provided. With this configuration, the lid body 6 is made of metal, so that the lid body 6 can be joined to the metal frame body 6a by a welding method such as a seam welding method, and the workability of joining the lid body 6 is improved. Can do. When the substrate 1 is made of ceramics, the metal frame 6a is provided on the upper surface of the substrate 1 by bonding using a metal frame bonding material 10 made of silver (Ag) -copper (Cu) solder or the like. When made of resin, the metal frame 6a is provided by embedding a part of the lower side by molding. The metal frame 6a is formed by a conventionally known metal processing method such as press processing, cutting processing, etching processing or the like.

  It should be noted that the metal layers such as the wiring conductor 4 formed on the surface of the substrate 1, the metal layer for joining the window member 2, the metal layer for joining the element 3, and the metal layer for joining the lid 6 have excellent corrosion resistance. A metal having excellent wettability with the brazing material, specifically, a nickel layer having a thickness of 0.5 to 9 μm and a gold (Au) layer having a thickness of 0.5 to 5 μm are sequentially deposited by a plating method. The metal layer can be effectively prevented from being oxidized and corroded, and electrical connection means 5 such as a bonding wire can be firmly connected to the wiring conductor 4, and the window member 2 can be firmly attached to the lower surface of the protruding portion 1c. The element 3 can be firmly bonded and fixed to the mounting portion 1a, and the lid body 6 can be firmly bonded and fixed to the upper surface of the base 1.

(Lid)
The lid 6 is made of a metal such as an iron-nickel-cobalt alloy or an iron-nickel alloy, a ceramic such as an alumina ceramic, an aluminum nitride ceramic, or a mullite ceramic, or a resin such as an epoxy resin. a) and a flat plate shape as shown in FIG. 1B or a reverse concave shape (not shown).

  The lid 6 is for hermetically sealing the inside of the container composed of the through hole 1b of the base 1 and the window member 2, and the container mounting portion 1a composed of the through hole 1b of the base 1 and the window member 2 is used. The element 3 is placed and fixed on the element bonding material 8, and the electrodes of the element 3 are electrically connected to the wiring conductor 4 via the electric connection means 5, and then the base 1 is formed as shown in FIG. The lid body 6 is bonded to the upper surface using a lid bonding material 9 made of gold-tin brazing, gold-germanium brazing, silver-tin brazing, resin adhesive or the like. Alternatively, as shown in FIG. 1B, a metal frame 6a is previously bonded to the upper surface of the base 1 using a metal frame bonding material 10 made of silver-copper braze or the like, and the metal frame 6a is coated with iron- The lid 6 made of a metal such as nickel-cobalt alloy or iron-nickel alloy is joined by a welding method such as a seam welding method.

  Preferably, the metal frame 6a is bonded in advance to the upper surface of the base 1 using a metal frame bonding material 10 made of silver-copper braze or the like. With this configuration, the lid body 6 can be joined to the upper surface of the metal frame 6a by a welding method such as a seam welding method, and the workability of joining the lid body 6 can be improved.

  Moreover, in the joining using such a welding method of the lid body 6, only the joint portion between the lid body 6 and the metal frame body 6 a is locally heated, and the mounting portion 1 a of the element 3 Can be made difficult to heat. Accordingly, the element bonding material 8 such as solder for bonding the element 3 to the mounting portion 1a is prevented from being melted again, and the airtightness of the bonding between the element 3 and the mounting portion 1a is prevented from being broken. be able to.

  Further, it acts to absorb and relax the stress due to the difference in thermal expansion between the base body 1 and the lid body 6 acting on the base body 1 when the base body 1 and the lid body 6 are joined, and prevents the base body 1 from being damaged such as cracks. As a result, the airtight reliability of the substrate 1 can be improved.

<Optical semiconductor device>
Next, an optical semiconductor device using the above-described members will be described in detail below.

  The optical semiconductor device of the present invention is an optical semiconductor device comprising an element 3 that emits or receives light, and a window member 2 that is disposed opposite to the element 3 and includes a semiconductor material. It includes a compound (hydrogen compound) 20 of an element and a hydrogen element constituting a semiconductor material.

  By adopting such a configuration, not only can a defect site in the window member 2 be reduced by a passivation effect by simply adding a hydrogen element to an element constituting the semiconductor material, for example, when the element 3 receives light, that is, The light incident on the element 3 from the outside of the optical semiconductor device through the window member 2 passes through the window member 2 whose refractive index is lowered by the hydrogen element. Therefore, it is possible to prevent the incident light from being reflected by the window member 2 and to allow the incident light to enter the element 3 while maintaining a sufficient light intensity.

  On the contrary, when the element 3 emits light, that is, light emitted from the element 3 to the outside of the optical semiconductor device through the window member 2 also passes through the window member 2 whose refractive index is lowered by the hydrogen element. Therefore, it is possible to prevent the outgoing light from being reflected by the window member 2, and the reflected light is incident on the element 3 again, so that the operation of the element 3 becomes unstable, or the light intensity of the outgoing light becomes insufficient. Can be suppressed.

  In the example of the package shown in FIGS. 1A and 1B, a shelf 1e on which a wiring conductor 4 is formed is provided on the inner surface of the side wall 1d of the base body 1 above the protruding portion 1c. Yes. The wiring conductor 4 functions as an electric signal input / output pad of the element 3, and the electrodes of the wiring conductor 4 and the element 3 are electrically connected via an electrical connection means 5 such as a bonding wire. Since the wiring conductor 4 is led out from the inside of the base 1 and connected to an external electric circuit, an electric signal can be input and output between the element 3 and the external electric circuit, and functions as an optical semiconductor device. Become.

  Further, although not shown, it is preferable to pot the element 3 with resin instead of providing the lid 6 because an inexpensive optical semiconductor device can be manufactured.

  Preferably, as shown in FIGS. 1A and 1B, in the optical semiconductor device, the volume of the space formed by the lower surface of the element 3, the upper surface of the window member 2, and the through hole 1 b of the base 1 is small. The volume of the space formed by the upper and side surfaces of the element 3, the lower surface of the lid 6, and the through hole 1 b of the base 1 is preferably small. With this configuration, the volume of an airtight space formed by the light receiving surface 3a of the element 3 and the window member 2 can be further reduced, and an optical semiconductor device having extremely excellent infrared detection performance can be obtained. For example, the thickness A of the protruding portion 1 c of the base body 1 only needs to be smaller than the distance B from the lower surface of the lid 6 to the upper surface of the element 3.

  The present invention is not limited to the above-described embodiments and examples, and various modifications may be made without departing from the scope of the present invention.

  Needless to say, even if the package is as shown in FIG. 2, the effect of the present invention can be obtained by forming the hydrogen compound 20 on the window member.

  Further, the semiconductor material is preferably made of germanium or silicon, and has a stronger connection with a hydrogen element than other semiconductor elements, so that the hydrogen compound 20 can be further formed.

(A) is sectional drawing which shows an example of embodiment of the optical semiconductor device of this invention, (b) is sectional drawing which shows the other example of embodiment of the package for semiconductor element accommodation of this invention, and an optical semiconductor device. is there. It is sectional drawing which shows an example of the conventional package for semiconductor element accommodation, and an optical semiconductor device.

Explanation of symbols

1: Spacer member (base)
DESCRIPTION OF SYMBOLS 1a: Mounting part 1b: Through-hole 1c: Protrusion part 2: Window member 3: Semiconductor element 6: Lid body 6a: Metal frame 7: Window bonding material 8: Element bonding material 9: Lid bonding material 10: Metal frame Bonding material 20: Hydrogen compound

Claims (8)

A light emitting or receiving element;
An optical semiconductor device comprising a window member disposed oppositely on the element and including a semiconductor material,
The optical semiconductor device, wherein the window member includes a compound of an element constituting the semiconductor material and a hydrogen element.   2. The optical semiconductor device according to claim 1, wherein the window member has a higher content of the hydrogen element in the lower surface of the window member than in the upper surface.   The optical semiconductor device according to claim 1, further comprising a spacer member that defines an interval between the element and the window member.   The optical semiconductor device according to claim 3, wherein an airtight space is formed by an upper surface of the element, a lower surface of the window member, and a side surface of the spacer member.   The optical semiconductor device according to claim 3, wherein the spacer member is ceramic.   6. The optical semiconductor device according to claim 4, wherein the airtight space is filled with hydrogen gas.   The optical semiconductor device according to claim 1, wherein the semiconductor material is made of germanium or silicon.   The optical semiconductor device according to claim 1, wherein the element is an infrared light receiving element.

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