JP5107886B2 - Manufacturing method of optical semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing an optical semiconductor device. More specifically, for example, a method for manufacturing an optical semiconductor device including a step of collectively sealing light emitting elements such as light emitting diodes and semiconductor lasers with an optical semiconductor element sealing sheet, and an optical semiconductor element sealing sheet used in the manufacturing method And an optical semiconductor device obtained by the manufacturing method.

  Instead of incandescent bulbs and fluorescent lamps, light-emitting devices using optical semiconductors (light-emitting diodes) have become widespread. There are various types of light emitting devices (white LEDs) of white light emitting diodes.In recent years, blue light emitting elements (chips) and phosphors that convert blue contained in a sealing resin into yellow are used. In combination, a mode of emitting white light by mixing blue and yellow has become the mainstream.

  Recently, the development of light-emitting elements is also progressing at a rapid pace, and instead of the conventional low-luminance white package mainly using a shell type, a high-luminance white package that can be used for a headlight has been developed. .

In such a package, the epoxy resin that has been conventionally used as a sealing resin has a problem that transparency is lowered due to deterioration due to light and heat, and a resin having excellent durability such as silicone is used (patent) Reference 1).
JP 2004-186168 A

  Although silicone resin is excellent in durability, it usually needs to be molded using a liquid silicone resin because it exhibits a liquid state, and poor workability at the time of sealing results in low throughput and high cost. It is a factor.

  In general packages, after forming a phosphor-containing resin layer near the chip, a protective layer and a lens are often provided on the outer side. From the viewpoint of increasing the light extraction efficiency from the chip due to the package structure. It is preferable that the phosphor is arranged as far as possible from the chip, that is, the phosphor is disposed on the outermost side of the sealing resin.

  However, when the layer in which the phosphor is dispersed is disposed outside the sealing resin layer, the phosphor-containing resin layer is formed after the sealing resin layer in the vicinity of the chip is molded, depending on the shape of the sealing resin layer. Therefore, it is difficult to mold the phosphor-containing resin layer with a uniform thickness, and the thickness of the phosphor-containing resin layer is likely to change due to external pressure. Since it is easy, the obtained package has a problem that chromaticity varies and luminance tends to decrease.

  An object of the present invention is obtained by a method for easily producing an optical semiconductor device capable of maintaining high luminance with small variations in chromaticity, an optical semiconductor element sealing sheet used in the production method, and the production method. An optical semiconductor device is provided.

  As a result of repeated studies to solve the above problems, the present inventors applied a sealing resin on the optical semiconductor element mounted on the substrate, and then, on the sealing resin, the first sheet and By laminating and compression molding an optical semiconductor element sealing sheet comprising a second sheet containing a wavelength conversion material, the optical semiconductor element sealing sheet is formed as a layer having a uniform thickness outside the sealing resin. The present inventors have found that an optical semiconductor device that can be molded and the wavelength conversion material is uniformly dispersed, has a small chromaticity variation, and can maintain high luminance, and has completed the present invention.

That is, the present invention is, exfoliation can first sheet, and the sheet for encapsulating a photosemiconductor element second sheet is formed by directly or indirectly laminated containing a wavelength converting material in said first sheet, light After the sealing resin is applied or dropped onto the semiconductor element, the first sheet is laminated so that it becomes the outermost layer, and after compression molding with a mold from above, the molded sheet for optical semiconductor element sealing characterized by peeling off the first sheet from relates to the production how an optical semiconductor device.

  According to the manufacturing method of the present invention, it is possible to easily obtain an optical semiconductor device in which chromaticity variation is small and high luminance can be maintained.

  The method for producing an optical semiconductor device of the present invention comprises laminating an optical semiconductor element sealing sheet on an optical semiconductor element (hereinafter referred to as an LED chip) via a sealing resin, and then using a mold from above. Although it is compression-molded, the sheet is formed by directly or indirectly laminating a first sheet that can be peeled off and a second sheet containing a wavelength conversion material. It has a great feature in peeling off the first sheet. In the present specification, “releasable” means that the first sheet can be easily peeled off from the optical semiconductor element sealing sheet after compression molding, and the sheet is “directly laminated”. Means a sheet formed by directly laminating the second sheet on the first sheet, and the “indirectly laminated” sheet is a conventional method between the first sheet and the second sheet. Accordingly, it means a sheet formed by laminating through another layer, for example, a thin film of a resin layer not containing a wavelength converting material, preferably a thin film made of the same resin as that constituting the second sheet.

  Moreover, in this invention, since the sheet | seat for optical-semiconductor element sealing is laminated | stacked so that a 2nd sheet | seat may contact the sealing resin of an LED chip, ie, a 1st sheet | seat may become an outermost layer, it shape | molds after compression molding. The first sheet is peeled from the optical semiconductor element sealing sheet thus obtained, the optical semiconductor device obtained by the present invention is a second sheet (hereinafter also referred to as a sealing resin A sheet) as a sealing resin layer, It contains a sealing resin (hereinafter also referred to as sealing resin B) interposed between the optical semiconductor element sealing sheet and the LED chip. Therefore, the 2nd sheet | seat containing a wavelength conversion material will be located in the outermost layer, and the light extraction efficiency from a LED chip can be made high. In the present specification, the “outermost layer” means a position farthest from the LED chip in the sealing resin layer of the LED chip.

Furthermore, the second sheet preferably has a storage elastic modulus at 150 ° C. of 0.5 × 10 ^{5 to} 1.0 × 10 ⁸ Pa. In the case where such a value is shown, since the constant thickness can be maintained without changing the shape of the layer by an external force or a pressure at the time of sealing, the wavelength conversion material can be uniformly dispersed. Accordingly, when an optical semiconductor device is manufactured using a resin sheet having such physical properties, it can be simply sealed by simply applying pressure by stacking the sheet on the chip mounting substrate, and a sealing resin. Since a uniform wavelength conversion material-containing layer can be provided on the outer side of the layer, the resulting device has little variation in chromaticity and high brightness.

  The sheet | seat for optical semiconductor element sealing in this invention contains a 1st sheet and a 2nd sheet as a structure sheet.

The first sheet may be any sheet that can be peeled off from the second sheet. However, since peeling is performed after compression molding, followability in mold molding is required. Accordingly, the first sheet is rigid at room temperature but has flexibility at the curing temperature. Specifically, the storage elastic modulus at 150 ° C. is preferably 5.0 × 10 ⁸ Pa or less, and storage at 25 ° C. It is desirable that the elastic modulus is made of a material that is preferably 1.0 × 10 ⁷ Pa or more. Examples of such materials include thermoplastic resins having relatively low polarity such as styrene, propylene, polyethylene, silicone resin, and fluororesin. Among these, fluororesin is preferable from the viewpoint of heat resistance, peelability, and followability, and a Teflon (registered trademark) film (trade name “Nitoflon”, NO900, thickness 40 μm) manufactured by Nitto Denko Corporation is suitably used. . The first sheet may be subjected to a release treatment or a multilayer structure in accordance with a conventional method from the viewpoint of improving the releasability from the second sheet or the mold during compression molding.

The storage elastic modulus of the first sheet at 150 ° C. is preferably 5.0 × 10 ⁸ Pa or less, more preferably 1.0 × 10 ^{5 to} 1.0 × 10 ⁸ Pa, and further preferably 1.0 × 10 ^{6 to} 1.0 × 10 ⁸ Pa. The storage elastic modulus at 25 ° C. is preferably 1.0 × 10 ⁷ Pa or more, more preferably 5.0 × 10 ^{7 to} 5.0 × 10 ⁹ Pa, and further preferably 1.0 × 10 ^{8 to} 2.0 × 10 ⁹ Pa. In addition, in this specification, a storage elastic modulus is measured by the method as described in the below-mentioned Example.

  Although the thickness of a 1st sheet | seat is not specifically limited, From a viewpoint made to track a metal mold | die, 30-200 micrometers is preferable and 30-80 micrometers is more preferable.

  The second sheet (sheet of sealing resin A) contains a wavelength conversion material (phosphor). The second sheet is also referred to as a phosphor-containing layer.

  The resin constituting the second sheet, that is, the sealing resin A is not particularly limited as long as it is a resin conventionally used for optical semiconductor sealing, and examples thereof include transparent resins such as epoxy resins, acrylic resins, and silicone resins. However, it is preferable to use a silicone resin as a main component from the viewpoint of durability, heat resistance, light resistance, and the like. In consideration of application to molding by the concave and convex mold method, silicone resin is preferable from the viewpoint of followability to the mold. In the present specification, the “main component” means a component of 70% by weight or more among the components of each constituent sheet.

  Examples of the silicone resin include silicone resins such as gels, semi-cured products, and cured products depending on the number of crosslinks of the siloxane skeleton, and these can be used alone or in combination of two or more. Among these, a gel-like product and a semi-cured product are preferable from the viewpoint of moldability.

  The siloxane skeleton is not particularly limited, and examples thereof include dimethylsiloxane, diphenylsiloxane, methylphenylsiloxane, and the like, and dimethylsiloxane is preferable because it has a low elasticity even when highly crosslinked.

  In addition, since the second sheet in the present invention has low elasticity that maintains a certain thickness even by external force or pressure at the time of sealing, in order to have such physical properties, a siloxane skeleton is formed by a known method. The number of crosslinks may be adjusted.

  As this resin, what is marketed may be used and what was manufactured separately may be used.

  The content of the silicone resin in the resin constituting the second sheet is preferably 70% by weight or more, more preferably 90% by weight or more, and further preferably substantially 100% by weight.

The wavelength conversion material (phosphor) is not particularly limited, and examples thereof include known phosphors used in optical semiconductor devices. Specifically, yellow phosphors (α-sialon), YAG, TAG, etc. are exemplified as suitable commercially available phosphors having a function of converting blue to yellow, and suitable commercially available phosphors having a function of converting red. Examples of the product phosphor include CaAlSiN ₃ .

  Since the degree of color mixing varies depending on the type of phosphor and the thickness of the second sheet, the phosphor content is not generally determined.

  In addition to the sealing resin A and the phosphor, the second sheet includes a curing agent, a curing accelerator, an anti-aging agent, a modifier, a surfactant, a dye, a pigment, a discoloration inhibitor, and an ultraviolet absorber. Etc. may be blended as a raw material.

  The second sheet is prepared by, for example, adding a phosphor to the sealing resin A or the organic solvent solution of the sealing resin A so that the concentration is preferably 20 to 50% by weight and stirring and mixing, for example, a separator (for example, (Teflon (registered trademark) film) by casting, spin coating, roll coating, etc. to form an appropriate thickness, and the temperature at which the solvent can be removed without causing the curing reaction to proceed. Is dried into a sheet shape. The temperature at which the formed resin solution is dried cannot be determined unconditionally because it varies depending on the type of resin or solvent, but is preferably 80 to 150 ° C, more preferably 90 to 150 ° C.

  Moreover, 10-120 micrometers is preferable from a viewpoint of whitening, and, as for the thickness of the 2nd sheet | seat after heat drying, 50-100 micrometers is more preferable. In addition, the obtained sheet | seat can also be shape | molded as one sheet | seat which has the thickness of the said range by laminating | stacking several sheets and carrying out hot pressing.

The storage elastic modulus at 150 ° C. of the second sheet is preferably 0.5 × 10 ^{5 to} 1.0 × 10 ⁸ Pa, more preferably 1.0 × 10 ^{5 to} 5.0 × 10 ⁷ Pa, and further 2.0 × 10 ^{5 to} 5.0 × 10 ⁶ Pa. preferable.

  Further, since the second sheet is not deformed by an external force, the stress relaxation rate is preferably 20% or less, more preferably 1 to 15%, and further preferably 5 to 15%. In this specification, the stress relaxation rate is measured by the method described in the examples described later.

  The method for laminating the first sheet and the second sheet is not particularly limited. For example, when the second sheet is formed into a sheet, the first sheet is directly formed on the first sheet of the optical semiconductor element sealing sheet. The method of shape | molding and laminating | stacking two sheets is mentioned.

  In compression molding, the optical semiconductor element sealing sheet thus obtained is laminated on the LED chip and then compression molded. In the present invention, the LED chip is sealed via a sealing resin (sealing resin B). The optical semiconductor element sealing sheet is laminated thereon. Therefore, even if the optical semiconductor element sealing sheet is deformed following the mold by compression molding, the LED chip is wrapped in the deformed sealing resin B so as to follow the deformed optical semiconductor element sealing sheet. Will be buried.

  As the sealing resin B, a known resin used in an optical semiconductor device can be used as long as it can embed an LED chip. The resin may be liquid or solid, but preferably has a viscosity at 150 ° C. of 200 Pa. It is desirable to use one that is s or less, more preferably 20 Pa · s or less. Further, it is desirable that the LED chip can be embedded by applying stress during molding, and then cured to have a predetermined hardness, but a silicone resin is preferred from the viewpoint of durability. The sealing resin B may be the same as or different from the sealing resin A. In the present specification, the viscosity can be measured using a B-type viscometer.

As an aspect of laminating an optical semiconductor element sealing sheet on the LED chip via the sealing resin B,
Aspect 1: A sealing resin B is directly applied or dropped onto an LED chip, and then an optical semiconductor element sealing sheet is laminated. Aspect 2: A sealing resin B is molded into a sheet or pellet. The aspect which laminates | stacks on an LED chip, and also laminate | stacks the sheet | seat for optical semiconductor element sealing is mentioned, Any aspect may be sufficient as long as an LED chip can be embedded by compression molding. In addition, as a method of shape | molding sealing resin B in a sheet form, well-known methods, such as the method of shape | molding said 2nd sheet | seat shape, are used, and there is no limitation in particular.

  The LED chip used in the present invention is not particularly limited as long as it is usually used in an optical semiconductor device. For example, gallium nitride (GaN, refractive index: 2.5), gallium phosphide (GaP, refractive index: 2.9), Examples thereof include gallium arsenide (GaAs, refractive index: 3.5). Among these, GaN is preferable from the viewpoint that blue light is emitted and a white LED can be manufactured through a phosphor.

  The substrate on which the LED chip is mounted is not particularly limited, and examples thereof include a rigid substrate in which copper wiring is laminated on a glass-epoxy substrate, and a flexible substrate in which copper wiring is laminated on a polyimide film. The thing of the form of can also be used.

  As a mounting method of the LED chip on the substrate, a face-up mounting method suitable for mounting an LED chip having an electrode disposed on a light emitting surface, an LED chip having an electrode disposed on a surface opposite to the light emitting surface is used. A flip lip mounting method suitable for mounting can be mentioned.

  In compression molding, a mold corresponding to the shape of the package in the obtained optical semiconductor device is used. Since the package has the same shape as the mold or a slightly rounder shape than the mold, the mold may be determined so as to have a desired shape.

  The conditions for compression molding are not determined unconditionally depending on the type of resin to be used, the sheet thickness, etc. For example, if the sealing resin B is liquid on the LED chip mounted on the substrate, it is applied as it is or solid Then, after laminating as it is, laminating the above sheet for optical semiconductor element sealing so that the second sheet faces the substrate on which the LED chip is mounted, and then installing a mold, preferably 80 to 200 ° C More preferably, the compression molded package is obtained by heating and pressurizing at a temperature of 100 to 160 ° C., preferably 0.05 to 10 MPa, more preferably 0.10 to 1 MPa. Moreover, it is preferable to perform heating and pressurization under reduced pressure from the viewpoint of preventing air bubbles from entering the sealing resin layer.

  The compression molded package is left to stand until the shape does not change even at room temperature, then removed from the mold, heated and pressurized to the time required to cure the sealing resin layer, post-cured, and molded. The first sheet is peeled from the optical semiconductor element sealing sheet. The optical semiconductor device thus obtained has a package having a three-dimensional structure, and in the package, the phosphor-containing layer is located at the outermost layer of the sealing resin layer with a uniform thickness, so that the variation in chromaticity is small. In addition, the light extraction efficiency is excellent. Therefore, the present invention provides an optical semiconductor device obtained by the manufacturing method of the present invention.

  In the optical semiconductor device of the present invention, the package has a three-dimensional structure, and the phosphor-containing layer having a uniform thickness is arranged in the outermost layer, so that the variation in chromaticity is small and the luminance is high. In addition, since the sealing process is completed with one heating and pressurization, productivity is high compared to the conventional two-stage sealing process, and cost reduction is achieved.

  EXAMPLES Hereinafter, although this invention is demonstrated based on an Example and a comparative example, this invention is not limited at all by these Examples.

[Stress relaxation rate of resin layer]
A resin layer is cut into a length of 5 cm and a width of 1 cm, and a tensile test is performed with Tensilon (manufactured by Shimadzu Corporation) on a portion (sample) of the obtained resin layer having a length of 3 cm and a width of 1 cm. Specifically, the sample is fixed with a load of 100 g and left in that state for 1 hour. The load value after 1 hour is read from the apparatus, and the stress relaxation rate is calculated from the following formula.
Stress relaxation rate (%) = Load value after 100-1 hours / 100 g × 100

[Storage modulus of resin layer]
A sheet with a thickness of about 1 mm is formed by laminating a plurality of each resin layer, and the viscoelasticity during shearing is measured with a dynamic viscoelasticity measuring device (DMS-200, manufactured by SII Nano Technology). And determine the storage modulus at 25 ° C and 150 ° C.

[Viscosity of resin]
Measurement is performed using a rheometer (manufactured by Haake, RS-6000) under conditions of 150 ° C. and 1 atm.

Example 1
<Sheet for optical semiconductor element sealing>
In a container equipped with a stirrer, a reflux condenser, and a nitrogen introduction tube, a silicone elastomer solution (trade name “LR7556” manufactured by Asahi Kasei Wacker Co., Ltd., dimethylsiloxane skeleton derivative, viscosity 9 Pa · s at 150 ° C.), and yellow phosphor (α-sialon, average particle size 20 μm) was added to a particle concentration of 40% by weight and stirred for 1 hour. The obtained solution is applied as a first sheet on a Teflon (registered trademark) film (manufactured by Nitto Denko Corporation, trade name “Nitoflon”, NO900, 40 μm) to a thickness of 100 μm and dried at 150 ° C. for 10 minutes. Thus, an optical semiconductor element sealing sheet in which a second sheet having a thickness of 100 μm was laminated on the first sheet was obtained.

<Array package>
On an array substrate (1 cm x 8 cm, metal substrate) on which seven blue LED chips (1 mm x 1 mm, thickness 120 μm) are mounted at 1 cm intervals, a silicone elastomer (LR7556) solution (viscosity 9 Pa at 150 ° C) is applied to each chip. -About 50 mg of s) was applied or dropped. Thereafter, the optical semiconductor element sealing sheet obtained above is laminated so that the second sheet is disposed on the substrate side, and seven rectangular parallelepiped concave portions (8 mm × 8 mm, depth) are spaced from each other at an interval of 1 cm. The steel mold (1 cm x 8 cm, thickness 2 mm) on which the thickness is 500 μm) is overlapped so that the center of the chip and the recess faces each other, and using a vacuum laminator (manufactured by Nichigo Morton), 0.1 hPa After holding for 20 seconds under pressure, it was heated at 100 ° C. for 10 minutes under a pressure of 0.5 MPa. Then, after taking out from the vacuum laminator and returning to room temperature (25 ° C), the mold is removed, post-curing is performed with a dryer at 150 ° C for 1 hour, the first sheet is peeled off, and the array of Example 1 is removed. Got the package.

Example 2
Instead of using an iron mold in which a rectangular parallelepiped recess is formed in Example 1, an iron mold (1 cm × 8 cm) in which seven hemispherical recesses (diameter 5 mm, depth 250 μm) are formed at intervals of 1 cm. The array package of Example 2 was obtained in the same manner as in Example 1 except that the thickness was 2 mm).

Example 3
As the first sheet of the optical semiconductor element sealing sheet in Example 1, in place of using a Teflon (registered trademark) film (Nitoflon), a polypropylene film (40 μm) was used. The array package of Example 3 was obtained.

Example 4
<Sheet for optical semiconductor element sealing>
To a mixture of 200 g (17.4 mmol) of silanol-type silicone oil at both ends, 1.75 g (11.8 mmol) of vinyltrimethoxysilane and 20 mL of 2-propanol, 0.32 mL (0.35 mmol) of tetramethylammonium hydroxide aqueous solution (concentration 10% by weight) was added. The mixture was further stirred at room temperature (25 ° C.) for 2 hours. To the obtained oil, 1.50 g of organohydrogenpolysiloxane and 1.05 mL of a platinum carbonyl complex solution (platinum concentration 2% by weight) are added and stirred, and then a yellow phosphor (α-) is added so that the particle concentration becomes 40% by weight. Sialon and an average particle size of 20 μm) were added and stirred with a stirrer for 1 hour. This resin solution is applied as a first sheet on a Teflon (registered trademark) film (Nitoflon) to a thickness of 100 μm and dried at 150 ° C. for 10 minutes, whereby a second sheet having a thickness of 100 μm is formed on the first sheet. The sheet | seat for optical-semiconductor element sealing of Example 4 laminated | stacked was obtained.

<Array package>
Place the same substrate as the array substrate used in the array package of Example 1 on the work table of the vacuum laminator (manufactured by Nichigo Morton), and put epoxy resin powder (NT-602, manufactured by NITTO DENKO) on each chip. 50 mg was placed. Thereafter, the optical semiconductor element sealing sheet obtained above is laminated so that the second sheet is disposed on the substrate side, and seven rectangular parallelepiped concave portions (8 mm × 8 mm, depth) are spaced from each other at an interval of 1 cm. 500μm) is placed on the metal mold (1cm x 8cm, thickness 2mm) so that the center of the chip and the recess is facing each other, and the vacuum laminator pressure is maintained at 0.1hPa, temperature 150 ° C for 60 seconds. Then, heating was performed at 150 ° C. for 10 minutes at a pressure of 0.5 MPa from the top of the mold. Then, after taking out from the vacuum laminator and returning to room temperature (25 ° C), the mold was removed, and after performing a post cure with a dryer at 150 ° C for 1 hour, the first sheet was peeled off, and the array of Example 4 was removed. Got the package.

Example 5
An array package of Example 5 was obtained in the same manner as in Example 4 except that the optical semiconductor element sealing sheet in Example 1 was used as the optical semiconductor element sealing sheet.

Example 6
A yellow phosphor (α-sialon, average particle size 20 μm) was added to the silicone elastomer (LR7556) solution so as to have a particle concentration of 40% by weight, and the mixture was stirred for 1 hour. The resulting solution was applied as a first sheet on a polyester film (Mitsubishi Polyester Chemical Co., Ltd., trade name `` MRF-38 '', 38 μm) to a thickness of 100 μm, and dried at 150 ° C. for 10 minutes, An optical semiconductor element sealing sheet in which a second sheet having a thickness of 100 μm was laminated on the first sheet was obtained. Using the obtained sheet, the array package of Example 6 was obtained in the same manner as Example 4.

Example 7
A yellow phosphor (α-sialon, average particle size 20 μm) was added to a silicone gel (manufactured by Asahi Kasei Wacker, 612S) solution at a particle concentration of 40% by weight and stirred for 1 hour. The obtained solution was applied as a first sheet on a Teflon (registered trademark) film (Nitoflon) to a thickness of 100 μm and dried at 150 ° C. for 10 minutes, whereby a first sheet having a thickness of 100 μm was formed on the first sheet. An optical semiconductor element sealing sheet in which two sheets were laminated was obtained. Using the obtained sheet, the array package of Example 7 was obtained in the same manner as Example 4.

Comparative Example 1
Potting a silicone elastomer (LR7556) solution into an iron mold (1 cm x 8 cm, thickness 2 mm) with seven rectangular parallelepiped recesses (8 mm x 8 mm, depth 500 µm) at 1 cm intervals. After filling, the array substrate (1cm × 8cm, metal substrate) on which seven blue LED chips (1mm × 1mm, thickness 120μm) are mounted at 1cm intervals is stacked so that the center of the chip and the recess is facing each other. And curing at 150 ° C. under a load of 200 g to obtain an LED array package sealed with a transparent silicone elastomer.

  Next, on the obtained LED array package, a solution obtained by mixing a yellow phosphor (α-sialon) in a silicone elastomer (LR7556) solution to a particle concentration of 40% by weight is spray gun (Spraywork HG Ether Brush III, manufactured by Tamiya Co., Ltd.) to form a phosphor-containing layer having a thickness of 100 μm. Thereafter, post-curing was performed at 150 ° C. for 10 minutes to obtain an array package of Comparative Example 1.

Comparative Example 2
An iron mold (1 cm x 8 cm, thickness 2 mm) with seven rectangular parallelepiped recesses (8 mm x 8 mm, depth 500 µm) formed at 1 cm intervals, a yellow phosphor (α-) in a silicone elastomer (LR7556) solution An array substrate on which seven blue LED chips (1mm x 1mm, thickness 120μm) are mounted at 1cm intervals after potting a solution in which sialon) is mixed to a particle concentration of 15% by weight to fill each recess. Comparative Example 2 (1 cm × 8 cm, metal substrate) stacked so that the center of the chip and the recess face each other, cured at 150 ° C. under a load of 200 g, and sealed with a silicone elastomer containing a phosphor An array package was obtained.

  About the obtained array package, the characteristic was evaluated according to the following test examples 1-3. The results are shown in Table 1.

Test example 1 (lighting availability)
Wiring was installed so that the seven LED chips of the array package obtained above were lit in a series arrangement, and it was confirmed whether or not they would be lit when connected to a DC power source.

Test example 2 (luminance)
The illuminance at a position 50 cm away from the array package was measured with an illuminometer in a state where seven chips were lit by supplying a current of 350 mA to each array package. In addition, it shows that a brightness | luminance is so high that illumination intensity is high.

Test example 3 (chromaticity variation)
In the test of Test Example 2, the chromaticity directly above each chip was measured with the CIE chromaticity index, and the difference between the maximum chromaticity and the minimum chromaticity of the seven chips was calculated as the maximum chromaticity difference. Note that the smaller the maximum chromaticity difference is, the smaller the chromaticity variation is.

  As a result, it can be seen that the array package of the example has smaller chromaticity variation and can maintain high luminance than the array package of the comparative example.

  Since the optical semiconductor device obtained by the manufacturing method of the present invention has small chromaticity variation and can maintain high luminance, it can be used, for example, in a backlight of a liquid crystal screen, a traffic light, a large outdoor display, an advertisement signboard, etc. It can be preferably used.

FIG. 1 is a diagram showing an example of a usage mode of the optical semiconductor element sealing sheet of the present invention. (A) is before molding, (B) is during compression molding, (C) is after mold release, and (D) is after the first sheet is peeled off.

Explanation of symbols

1 Mold 2 First sheet 3 Second sheet 4 Sealing resin B
5 LED chip 6 substrate

Claims (4)

A sheet for sealing an optical semiconductor element formed by directly or indirectly stacking a peelable first sheet and a second sheet containing a wavelength conversion material on the first sheet is sealed on the optical semiconductor element. After the resin is applied or dripped, the first sheet is laminated so that it becomes the outermost layer, and after compression molding with a mold from above, the first sheet is peeled from the molded optical semiconductor element sealing sheet A method of manufacturing an optical semiconductor device. The production method according to claim 1, wherein the storage modulus at 150 ° C. of the first sheet is 5.0 × 10 ⁸ Pa or less and the storage modulus at 25 ° C. is 1.0 × 10 ⁷ Pa or more. The manufacturing method of Claim 1 or 2 whose 2nd sheet | seat contains a silicone resin as a main component and whose storage elastic modulus in 150 degreeC is 0.5 * 10 < ⁵ > -1.0 * 10 < ⁸ > Pa.   The manufacturing method in any one of Claims 1-3 whose viscosity in 150 degreeC of sealing resin is 200 Pa * s or less.