JP5080178B2 - Resist coating device - Google Patents

Description

  The present invention relates to a resist film coating apparatus, and more particularly to an electrodeposition coating apparatus for forming a resist film on a piezoelectric wafer formed as a piezoelectric vibrator.

  The crystal resonator is incorporated in a transmission device as a frequency control element, and is incorporated in various electronic devices including a communication device. As communication devices become smaller and thinner, there is a demand for further reduction in size and thickness of crystal units.

Usually, a quartz vibrator is provided on the entire surface of the piezoelectric wafer, and an electrodeposition resist film is formed by a spray resist method. For example, in Patent Document 1, a plurality of electrode needles provided at the tip of the discharge nozzle in order to form a resist film having a uniform thickness are arranged at equal intervals on the outer periphery of the discharge nozzle. As a result, an electrodeposition resist having a uniform film thickness can be formed.
JP 2006-58628 A

  However, since the invention described in Patent Document 1 described above has a structure in which an electrode needle for charging the mist-like resist fine particles at the tip of the discharge nozzle is provided on the outer periphery of the discharge nozzle, fine vortices generated around the electrode needle Due to the influence, there is a problem that a thin resist film cannot be stably obtained at the corners of the irregularities processed on the surface of the wafer.

In addition, there is a problem in that the viscosity changes due to the change in the temperature of the resist agent and the size of the mist-like resist fine particles varies, so that a uniform resist film cannot be obtained.
Further, since the container for containing the resist agent is small, the resist fine particle supply amount supplied to the discharge nozzle is uneven, and there is a problem in stably depositing a thin resist film.

  Further, the resist film is formed by setting the wafers one by one in the resist film coating apparatus. For this reason, there was a problem in mass productivity.

  SUMMARY OF THE INVENTION Accordingly, the present invention provides a resist film coating apparatus using a spray resist method that can form an electrodeposition resist film having a uniform thickness by reducing resist fine particles with high accuracy and is excellent in mass productivity.

In the resist coating apparatus according to the first aspect, a two-fluid nozzle that mixes a resist agent and a carrier gas and sprays the resist agent in a mist form, and a two-fluid nozzle at a predetermined height are sprayed from the two-fluid nozzle. A resist container for dropping the heavy resist particles among the resist particles to the lower part, a discharge port for discharging the small resist particles of the resist particles together with the carrier gas, and a small weight fed by the carrier gas from the discharge port A discharge nozzle that discharges resist particles, an electrode needle that is attached to the discharge nozzle and charges resist particles with a small weight, and a resist film is formed on multiple wafers using the charged resist particles. And a wafer holder having a grounding area.
With this configuration, a plurality of wafers can be set on the wafer holder, so that a resist film can be applied to the plurality of wafers simultaneously.

The wafer holding part of the resist coating apparatus according to the second aspect has a recess for inserting the wafer into the first surface, and a grounding region is formed in the recess.
According to the resist coating apparatus of the second aspect, since the wafer is brought into a grounded state when the wafer is put into the concave portion, there is no need for special work for the grounding.

The wafer holding part of the resist coating apparatus according to the third aspect has a clamp part for clamping the wafer, and a grounding region is formed in the clamp part.
When the wafer is held by the clamp unit when the wafer is held, the wafer is brought into a grounded state, so that no special work is required for the grounding.

In the resist coating apparatus according to the fourth aspect, the concave portion has a through-opening penetrating through the second surface opposite to the first surface.
Depending on the discharge pressure from the discharge nozzle, it is difficult to form a resist film at the corners or holes due to the pressure at which the resist particles rebound. According to this configuration, by using the through-opening when the pressure of the carrier gas from the discharge nozzle is high, a resist film can be easily formed even at the corner or hole.

The carrier gas of the resist coating apparatus according to the fifth aspect is temperature adjusted and mixed with the resist agent.
When the carrier gas temperature is adjusted, the viscosity of the resist particles is constant, and when the mist-like resist particles used in the piezoelectric wafer are uniformly applied to the piezoelectric wafer, the carrier gas is formed on the piezoelectric wafer. It is easy to form a resist layer at the corner or through hole.

According to the present invention, a resist film can be uniformly and thinly formed on a plurality of wafers even at corners.
Embodiments of the present invention will be described below with reference to the drawings.

<Outline of resist coating device>
FIG. 1 is a schematic cross-sectional view showing a configuration example of a resist coating apparatus 100 that forms a resist film by applying resist fine particles R <b> 1 to a quartz wafer substrate 10. The resist coating apparatus 100 includes a coating chamber 70, a resist fine particle generation chamber 80, and a resist tank 90.

  The resist tank 90 contains a liquid resist agent R2. For example, the resist agent R2 is a novolac positive resist. The resist agent R2 in the resist tank 90 is sent to the resist fine particle generation chamber 80 by the liquid supply pump 92. The inside of the resist tank 90 is set to a constant temperature. The resist agent R2 is set at, for example, 10 ° C. to 30 ° C., preferably around 20 ° C.

The resist agent R <b> 2 sent by the liquid supply pump 92 is first sent to a spray nozzle 82 attached to the upper part of the resist fine particle generation chamber 80. In addition, a carrier gas of an inert gas such as nitrogen (N ₂ ) or argon (Ar) pressurized to spray the resist agent R ₂ is supplied to the spray nozzle 82. The carrier gas is temperature adjusted to a constant temperature.

  The resist fine particle generation chamber 80 has a cylindrical shape, a rectangular tube shape, or a polygonal tube shape, and has a sufficient height (for example, 1500 mm). The tip of the spray nozzle 82 is provided above the center of the resist fine particle generation chamber 80. The discharge port 81 for the resist fine particle R1 is provided above the tip position of the spray nozzle 82, and an adjustment unit that adjusts the height of the discharge port 81 with the height between the resist fine particle generation chamber 80 and the ceiling of the container. Provided.

  The spray nozzle 82 is a two-fluid nozzle, and the resist agent R2 is jetted from the inner pipe, and the carrier gas is jetted from the outer pipe covering the inner pipe. For this reason, the spray nozzle 82 can spray the resist agent R2 into fine particles (mist form).

  The fine resist particles R1 float in the fine resist particle generation chamber 80. Of the resist fine particles R1, the resist fine particles R1 having a large diameter, that is, the heavy resist fine particles R1 fall below the resist fine particle production chamber 80 due to their own weight. The resist particles that have fallen below the resist particle generation chamber 80 adhere to each other and become the resist agent R2. The resist agent R2 is temporarily stored on the bottom surface of the resist fine particle generation chamber 80, and is returned again to the resist tank 90 by the return pump 94 via the valve 84.

  On the other hand, the resist particles R 1 having a small diameter drift in the resist particle generation chamber 80 without falling below the resist particle generation chamber 80. Then, the resist fine particles R1 are supplied from the discharge port 81 to the discharge nozzle 71 together with the carrier gas. That is, the resist fine particle generation chamber 80 is pressurized with the carrier gas, and the resist fine particles R1 are sent to the discharge nozzle 71 disposed in the coating chamber 70 via the discharge port 81 by the pressure of the carrier gas.

The resist fine particles R <b> 1 are jetted from the discharge nozzle 71 toward the surface 10 a of the crystal wafer substrate 10 together with the carrier gas in the coating chamber 70. Crystal wafer substrate 10 is horizontally held by the substrate set position of the U Fine pedestal plate 76. The wafer receiving plate 76 is fixed to the chuck 73, and the chuck 73 is connected to the Y-direction driving means 75 and is movable in the left-right direction in FIG. Further, the Y-direction driving means 75 is connected to the X-direction driving means 77, and the chuck 73 is movable in the front and back direction (front-rear direction) in FIG. This configuration will be described in detail with reference to FIG.

  In this embodiment, a discharge port 81b is provided at a position near the ceiling of the resist particle generation chamber 80, and a discharge port 81c is provided at a position far from the ceiling of the resist particle generation chamber 80, that is, a position near the spray port of the spray nozzle 82. The first valve 86 or the second valve 87 is opened and closed to switch between the discharge port 81b and the discharge port 81c. The particle diameter of the resist fine particle R1 becomes smaller as it is closer to the ceiling of the resist fine particle production chamber 80. Therefore, by switching between the discharge port 81b and the discharge port 81c, the size of the resist fine particles R1 suitable for the quartz wafer substrate 10 can be selected.

  The resist fine particles R1 that have not been applied to the quartz wafer substrate 10 in the application chamber 70 are attracted to each other and fall to the bottom surface of the application chamber 70 by their own weight. By collecting these, the resist agent R2 is obtained, and is returned again to the resist tank 90 by the return pump 94 via the valve 85. In the process of changing the resist agent R2 to the resist fine particles R1, the solvent of the resist agent R2, for example, thinner, is vaporized, so that the concentration of the resist agent R2 gradually increases. For this reason, it is preferable to periodically replenish the coating chamber 70 or other piping with a solvent.

  Viscosity varies depending on the type of resist agent, and also varies depending on the temperature of the resist agent. Therefore, when forming a uniform film thickness on the corners and holes of the quartz wafer substrate 10, the temperature of the resist agent is adjusted. is necessary. Further, in order to form a uniform film thickness at the corners and the holes of the quartz wafer substrate 10, the particle diameter of the resist fine particles R 1 also greatly affects. In this embodiment, since the particle diameter of the resist fine particles R1 can be selected, it is easy to form a uniform resist film on the quartz wafer substrate 10. Further, since the resist fine particles R1 are formed by the pressure of the carrier gas from the spray nozzle 82, and the carrier gas takes away or gives heat to the resist fine particles R1 at that time, the temperature adjustment of the carrier gas is important.

If the temperature of the carrier gas rises, the viscosity of the resist agent R2 or the resist fine particles R1 decreases and the particle diameter of the resist fine particles R1 becomes smaller. Therefore, the height of the discharge port 81 is lowered according to the temperature of the carrier gas. Thus, the resist fine particles R1 having a constant particle size can be always sent to the discharge nozzle 71.
<Quartz wafer substrate>

  FIG. 2A is a perspective view showing a configuration of a circular crystal wafer substrate 10 used in the present embodiment. The circular quartz wafer substrate 10 is made of, for example, an artificial single crystal quartz having a thickness of 0.8 mm, and the diameter of the circular quartz wafer substrate 10 is 3 inches or 4 inches. Further, an orientation flat 10c for specifying the crystal direction of the crystal is formed on a part of the peripheral portion 10e of the crystal wafer substrate 10 so that the axial direction of the circular crystal wafer substrate 10 can be specified.

  FIG. 2B is a perspective view showing a configuration of a rectangular crystal wafer substrate 15 used in the present embodiment. The rectangular quartz wafer substrate 15 is made of, for example, an artificial quartz having a thickness of about 0.8 mm, and one side of the rectangular quartz wafer substrate 15 is 2 inches. Further, an orientation flat 15c for specifying the crystal direction of the crystal is formed on a part of the peripheral portion 15e of the crystal wafer substrate 15 so that the axial direction of the rectangular crystal wafer substrate 15 can be specified.

  The circular crystal wafer substrate 10 in FIG. 2A and the rectangular crystal wafer substrate 15 in FIG. 2B show a situation in which the tuning fork type crystal vibrating piece 20 has already been formed. The tuning fork type crystal vibrating piece 20 is not completely a single vibrating piece, and a part of the base of the tuning fork type crystal vibrating piece 20 is connected to the circular crystal wafer substrate 10 or the rectangular crystal wafer substrate 15. ing. Therefore, hundreds to thousands of tuning-fork type crystal vibrating pieces 20 can be used as one crystal wafer substrate 10 and crystal wafer substrate 15 without processing each tuning-fork type crystal vibrating piece 20 on a pallet or the like. Can be handled.

  In the quartz wafer substrate 10, after the tuning fork type quartz vibrating piece 20 is formed, the electrode film 18 is formed by sputtering or the like. The electrode film 18 has a structure in which a chromium (Cr) layer is formed on the quartz wafer substrate 10 at several hundred angstroms, and a gold (Au) layer is formed on the chromium layer at several hundred angstroms. The electrode film 18 is also formed on the through hole, the orientation flat 10c, and the like due to the tuning fork type crystal vibrating piece 20 being formed. In the following embodiment, description will be made with a circular crystal wafer substrate 10 having an orientation flat 10c shown in FIG.

<Configuration of wafer driving means>
3A is an enlarged view of the inside of the coating chamber 70 of FIG. 1, and FIG. 3B is a plan view of FIG. The resist fine particles R1 discharged from the discharge nozzle 71 can be moved in the directions of the arrows AR1 and AR2 by the Y-direction driving means 75 and the X-direction driving means 77 in order to uniformly apply the crystal wafer substrate 10 with a uniform thickness. It is. As a result, the quartz wafer substrate 10 moves together with the wafer receiving plate 76. The Y direction driving means 75 and the X direction driving means 77 are constituted by linear motors or stepping motors and ball screws. The moving speed of the wafer receiving plate 76 is appropriately set according to the film thickness of the resist fine particles R1 on the quartz wafer substrate 10 and the supply amount of the resist fine particles R1 from the discharge nozzle 71.

The outer surface of the wafer receiving plate 76, the chuck 73, the Z direction driving means 75 or the X direction driving means 77 is covered with a nonconductive material such as plastic. The wafer receiving plate 76 holds the quartz wafer substrate 10. The wafer pedestal plate 76 has a conductive material exposed on the surface only at a portion 78 in contact with the electrode film 18 of the quartz wafer substrate 10. This is to make it difficult for the resist fine particles R1 to adhere to the wafer receiving plate 76 or the driving means.
Various types of wafer receiving plates 76 are prepared according to the shape and size of the quartz wafer substrate 10, and are replaced and used as necessary.

  The discharge nozzle 71 is provided with an electrode needle 72 in the center, and a high voltage direct current of about 50 kV to 150 kV is applied to the electrode needle 72 from the direct current power source DC. On the other hand, the electrode film 18 of the quartz wafer substrate 10 is configured to be grounded. When the resist fine particle R1 passes near the electrode needle 72, the resist fine particle R1 is charged. Therefore, the resist fine particles R1 discharged from the discharge nozzle 7 are applied to the quartz wafer substrate 10 by the Coulomb force together with the discharge pressure.

  Since the quartz wafer substrate 10 is provided with hundreds to thousands of tuning-fork type crystal vibrating pieces 20, a plurality of through holes or irregularities are formed in the quartz wafer substrate 10. The resist fine particles R1 to be applied are uniformly formed in the through holes and in the corners by Coulomb force.

  In the present embodiment, the discharge nozzle 71 is fixed and the crystal wafer substrate 10 moves in the XY plane. However, the discharge nozzle 71 may move in the XY plane and the crystal wafer substrate 10 may be fixed. Further, since the resist fine particles R1 are attracted to the quartz wafer substrate 10 by Coulomb force, the gravitational action is almost negligible. Therefore, the discharge nozzle 71 is fixed horizontally and the quartz wafer substrate 10 is moved to the XZ plane or YZ plane. Good.

FIG. 4A is a partial cross-sectional view showing the configuration of the first wafer receiving plate 76-1 and the quartz wafer substrate 10.
The first wafer receiving plate 76-1 shown in FIG. 4A (a) is a conductive metal plate such as aluminum alloy or stainless steel on which five crystal wafer substrates 10 can be installed. The first wafer receiving plate 76-1 is formed with concave portions 78 a, 78 b, 78 c, 78 d and 78 e that are slightly larger than the diameter of the quartz wafer substrate 10. The depth of the recess 78 of the first wafer receiving plate 76-1 is substantially equal to or slightly thicker than the thickness of the quartz wafer substrate 10. The inside of the recess 78 has a recessed portion 97 that is further recessed, and does not penetrate the back side of the first wafer receiving plate 76-1.

  The quartz wafer substrate 10 is set in the recess 78. Since the recess 97 is formed, only the periphery of the crystal wafer substrate 10 is in contact with the recess 78 when the crystal wafer substrate 10 is set. The first wafer receiving plate 76-1 has a clamp portion 79 that holds the quartz wafer substrate 10 set in the recess 78 from above.

4A (b-1) and 4 (b-2) are enlarged views of the recess 78 of the first wafer receiving plate 76-1.
A conduction part EC is formed in the concave part 78 in contact with the periphery of the quartz wafer substrate 10. As described above, the wafer pedestal plate 76 is a conductive metal plate, and the conduction portion EC is in a state where an insulating layer is not formed there. That is, the wafer receiving plate 76 is covered with the insulating layer except for the conduction part EC. The insulating layer is a non-conductive material such as plastic, and preferably a fluororesin (tetrafluoroethylene resin) is suitable. Originally, when it charged resist microparticles R1 forms a resist layer only in the quartz wafer substrate 10 that is grounded, the unnecessary resist particulate R1 is attached to the wafer receiving base plate 76, the insulating layer of the fluorocarbon resin resist particles This is because it is easy to clean R1.

In the recess 78 of FIG. 4A (b-1), the conduction part EC is formed on the horizontal plane and the vertical plane of the recess 78. Then, the quartz wafer substrate 10 set in the recess 78 is pressed from above by the clamp portion 79 and fixed by the screw SC.
On the other hand, in the recessed part 78 of FIG. 4A (b-2), the conduction | electrical_connection part EC is formed in the horizontal surface of the recessed part 78. FIG. And the conduction | electrical_connection part EC is formed in the lower surface of the clamp part 79 which hold | suppresses the crystal wafer substrate 10, and the conduction | electrical_connection part EC of the clamp part 79 is also earth | grounded. In this embodiment, the substrate presser 79 has four metal blocks arranged uniformly, but the wafer may be pressed using a single metal ring.

  Since the hollow portion 97 is depressed, the central portion of the crystal wafer substrate 10 does not directly contact the wafer receiving plate 76. This is because when a resist layer is formed on one surface of the quartz wafer substrate 10 and then a resist layer is formed on the other surface, the already formed resist layer is not damaged. Further, since the tuning fork type crystal vibrating piece 20 is not formed in the peripheral portion of the quartz wafer substrate 10, there is no problem even if the resist layer is damaged.

FIG. 4B is a partial cross-sectional view showing the configuration of the second wafer receiving plate 76-2 and the quartz wafer substrate 10.
4B (a) is also a conductive metal plate such as aluminum alloy or stainless steel on which five crystal wafer substrates 10 can be installed. The second wafer receiving plate 76-1 is formed with concave portions 78 a, 78 b, 78 c, 78 d and 78 e that are slightly larger than the diameter of the quartz wafer substrate 10. A through opening 98 is formed inside the recess 78 of the second wafer receiving plate 76-1.

4B (b-1) and 4 (b-2) are enlarged views of the recess 78 of the second wafer receiving plate 76-2.
Similar to the first wafer receiving plate 76-1, a conductive portion EC is formed in the concave portion 78. The second wafer receiving plate 76-2 is covered with an insulating layer except for the conduction part EC. The insulating layer is a non-conductive material such as plastic, and preferably a fluororesin (tetrafluoroethylene resin) is suitable. Similar to the first wafer receiving plate 76-1, in this embodiment, the substrate holder 79 has four metal blocks arranged uniformly, but even if the wafer is held using one metal ring. Good.

  The difference between the first wafer receiving plate 76-1 and the second wafer receiving plate 76-2 is whether there is a recess 97 or a through opening 98. The resist fine particles R <b> 1 discharged from the discharge nozzle 71 are charged when passing near the electrode needle 72. For this reason, the charged fine resist particles R1 are uniformly applied to the grounded crystal wafer substrate 10, but it is difficult to uniformly adhere to corners or holes. Depending on the discharge pressure of the discharge nozzle 71, the wind pressure that bounces off from the recess 97 interferes with the formation of a resist film at the corner or hole. Therefore, it is preferable to use the through opening 98 when the pressure of the carrier gas from the discharge nozzle 71 is high. On the other hand, when the pressure of the carrier gas from the discharge nozzle 71 is weak or appropriate, the wind pressure rebounding from the recess 97 tends to cause the resist fine particles R1 to be attached to the corners or holes. When the bottom surface of the second wafer receiving plate 76-2 is released by the through opening 98, the crystal wafer substrate 10 can be easily attached and detached.

<Outline of nitrogen gas heating device>
FIG. 5 is a schematic cross-sectional view showing a configuration example of a gas temperature control device 110 that adjusts nitrogen gas as a carrier gas to a constant temperature. The gas temperature adjustment device 110 includes a nitrogen gas temperature adjustment tank 120, a circulating fluid temperature adjustment tank 130, and a temperature control panel 140.

  The nitrogen gas temperature control tank 120 contains a liquid such as water, and a supply pipe 121 and a discharge pipe 122 through which nitrogen flows are arranged. The supply pipe 121 or the discharge pipe 122 is formed in a spiral shape so as to increase the contact area with the liquid. If the contact area between the pipe and the liquid is increased, the shape may be serpentine. Further, the supply pipe 121 or the discharge pipe 122 may be provided with wings (fins) to increase the contact area. The nitrogen gas is set to be, for example, 10 ° C. to 30 ° C., preferably around 20 ° C. The nitrogen gas temperature is preferably the same as that of the resist agent R2.

  Circulating water is stored in the circulating fluid temperature control tank 130. A temperature adjuster 142 that adjusts the water temperature and a thermocouple 144 that detects the water temperature are installed in the circulating fluid temperature adjusting tank 130. A circulation pump 131 is disposed between the nitrogen gas temperature adjustment tank 120 and the circulating liquid temperature adjustment tank 130, and the water whose temperature is adjusted in the circulation liquid temperature adjustment tank 130 is sent to the nitrogen gas temperature adjustment tank 120. . The nitrogen gas temperature control tank 120 is kept at a constant temperature by the circulating water from the circulating liquid temperature control tank 130.

  The temperature control panel 140 is connected to the temperature controller 142 via the temperature control cable 141, and is connected to the thermocouple 144 via the temperature cable 143. The temperature control panel 140 detects the temperature from the thermocouple 144, determines whether the temperature is higher or lower than a predetermined temperature, and turns on or off the heater or cooler in the temperature controller 142 based on the result. The temperature control panel 140 keeps the circulating fluid in the circulating fluid temperature adjusting tank 130 at a constant temperature by ON / OFF timing in the temperature controller 142 by, for example, PID control.

The spray nozzle 82 is supplied with a carrier gas of an inert gas such as nitrogen or argon that has been pressurized in order to spray the resist agent R2, but basically any pressurized gas can be applied.
Further, although the object on which the resist film is formed is the crystal wafer substrate 10 having irregularities, it can be applied to a flat plate or other materials. In the above embodiment, the quartz wafer is described. However, other than quartz, piezoelectric materials such as lithium tantalate and lithium niobate can be used.

Furthermore, in the above embodiment, the temperature controller 142 and the thermocouple 144 are installed in the circulating fluid temperature control tank 130, but the temperature controller 142 is installed in the nitrogen gas temperature control tank 120 and the thermocouple is installed in the circulating fluid temperature control tank 130. 144 may be installed.
Moreover, although the circulating liquid temperature control tank 130 and the circulation pump 131 were provided as equipment for adjusting the temperature of the nitrogen gas, the temperature of the liquid in the nitrogen gas temperature control tank 120 may be directly adjusted without providing these. Good.

It is a schematic sectional drawing which shows the structural example of the resist film coating apparatus 100 explaining one Example regarding application | coating of a resist fine particle. FIG. 2A is a perspective view showing a circular crystal wafer substrate 10 used in this embodiment, and FIG. 2B is a perspective view showing a rectangular wafer substrate 15. (A) is an enlarged view in the coating chamber 70 of FIG. 1, (b) is a plan view of (a). (A) is a fragmentary sectional view of the first wafer receiving plate 76-1 and the quartz wafer substrate 10, and (b) is an enlarged view thereof. (A) is a fragmentary sectional view of the second wafer receiving plate 76-2 and the quartz wafer substrate 10, and (b) is an enlarged view thereof. It is a schematic sectional drawing which shows the structural example of the apparatus 110 which heats nitrogen gas to fixed temperature.

Explanation of symbols

10: Crystal wafer substrate (10c: Orientation flat)
15 ... Quartz wafer substrate (15c ... Orientation flat)
DESCRIPTION OF SYMBOLS 18 ... Electrode film 20 ... Tuning fork type crystal vibrating piece 70 ... Coating chamber 71 ... Discharge nozzle 72 ... Electrode needle 73 ... Chuck 75 ... Y direction drive means 76 ... Wafer receiving plate (76-1 ... 1st wafer receiving plate, 76-2... First wafer receiving plate)
77 ... X direction drive means 78 ... Recessed part (78a, 78b, 78c, 78d, 78e)
79 ... Clamp part 80 ... Resist fine particle production chamber 81 ... Discharge port 82 ... Spray nozzles 84, 85, 86, 87 ... Valve 90 ... Resist tank 97 ... Recessed part 98 ... Through-opening 100 ... Resist coating device 110 ... Nitrogen gas heating Apparatus 120 ... Nitrogen gas temperature control tank 121, 122 ... Nitrogen gas pipe 130 ... Circulating fluid temperature control tank 131 ... Circulating pump 140 ... Temperature control panel 142 ... Temperature controller 144 ... Thermocouple AR1, AR2 ... Arrow R1 ... Resist fine particle R2 … Resist agent

Claims (5)

By mixing the resist material and the carrier gas atomized, and two-fluid nozzle for spraying the resist material,
A resist container that provides the two-fluid nozzle at a predetermined height, and drops resist particles having a large weight among the resist particles sprayed from the two-fluid nozzle to the lower part,
A discharge port for discharging a small amount of the resist particles of the resist particles together with the carrier gas;
A discharge nozzle that discharges small resist particles fed by the carrier gas from the discharge port;
An electrode needle attached to the discharge nozzle and charging the small resist particles;
A wafer holding part that is covered with an insulating layer and on which the wafer is placed ,
The wafer holding portion has a recess for inserting the wafer on a first surface thereof, and a ground region for forming a resist film on a plurality of wafers is formed in the recess using the charged resist particles. A resist coating apparatus. By mixing the resist material and the carrier gas atomized, and two-fluid nozzle for spraying the resist material,
A resist container that provides the two-fluid nozzle at a predetermined height, and drops resist particles having a large weight among the resist particles sprayed from the two-fluid nozzle to the lower part,
A discharge port for discharging a small amount of the resist particles of the resist particles together with the carrier gas;
A discharge nozzle that discharges small resist particles fed by the carrier gas from the discharge port;
An electrode needle attached to the discharge nozzle and charging the small resist particles;
A wafer holding part that is covered with an insulating layer and on which the wafer is placed ,
The wafer holding portion has a clamp portion for clamping the wafer, and a ground region for forming a resist film on a plurality of wafers is formed in the clamp portion using the charged resist particles. A resist coating apparatus characterized by: 3. The resist coating apparatus according to claim 2 , wherein the wafer holding portion has a concave portion for inserting the wafer on a first surface thereof, and the grounding region is formed in the concave portion. The resist coating apparatus according to claim 1, wherein the concave portion has a through-opening that penetrates through a second surface opposite to the first surface. The carrier gas, the resist coating apparatus according to any one of claims 1 to 4, characterized in that it is mixed with the resist agent is temperature adjusted.