JP5071037B2 - Semiconductor laser device - Google Patents

Description

  The present invention relates to a semiconductor laser device including a semiconductor element, and more particularly to a semiconductor laser device including a wavelength conversion member that converts the wavelength of light emitted from the semiconductor laser element.

As one of semiconductor laser devices, a semiconductor laser element fixed to a stem is covered and sealed with a metal cap (for example, see Patent Documents 1 to 8). An opening for allowing laser light to pass through is formed in the cap, and a light transmitting member (for example, a glass plate) capable of transmitting the laser light and sealing the opening is fixed to the opening.
JP 2007-27471 A JP 2004-71689 A JP 2001-313437 A JP 2001-237501 A JP-A-8-107250 JP-A-6-334269 JP-A-6-61575 JP-A-5-333246

  By providing the semiconductor laser device with a wavelength conversion member that converts the wavelength of the laser light from the semiconductor laser element, a semiconductor laser device that emits laser light having a wavelength different from that of the semiconductor laser element can be obtained. As an example of the wavelength conversion member, a material in which a phosphor is dispersed in a glass material can be given. Although such a wavelength conversion member can be used in place of the translucent member to seal the opening, in practice, several problems arise.

  The phosphor contained in the wavelength conversion member scatters part of the light. When the scattered light is applied to the cap, there is a problem that the cap absorbs the light and the light extraction efficiency of the laser device is lowered.

  Further, the phosphor is partially exposed on the surface of the wavelength conversion member in which the phosphor is dispersed in the glass material. Since the interface between the phosphor and the cap is difficult to adhere, sufficient airtightness cannot be maintained at the interface between the phosphor and the cap when the wavelength conversion member is fixed to the cap, and the sealing inside the cap may be deteriorated. is there.

  Accordingly, an object of the present invention is to provide a semiconductor laser device provided with a wavelength conversion member that suppresses the adverse effect of scattered light from the wavelength conversion member and has excellent sealing performance in the cap.

The semiconductor laser device of the present invention includes a semiconductor laser element and a cap that covers the semiconductor laser element. The cap has an opening through which the laser light of the semiconductor laser element passes. A glass member that covers and covers the opening from above, a wavelength conversion member that is located on the glass member and that contains a phosphor that absorbs the laser light and emits fluorescence of different wavelengths, the glass member, and the glass member It possesses a reflection film disposed between the wavelength converting member, the outer edge of the reflection film, that extends to the outside than the line connecting the outer edge of the outer edge and the cap of the wavelength conversion member Features.

In the semiconductor laser device of the present invention, the wavelength conversion member is disposed above the reflective film, and the semiconductor laser element and the cap are disposed below the glass member. Therefore, since the scattered light from the wavelength conversion member is reflected by the reflective film, it can be suppressed that the cap is irradiated.
Moreover, since an opening part can be sealed with a glass member, the sealing performance in a cap can be made high.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, terms indicating specific directions and positions (for example, “up”, “down”, “right”, “left” and other terms including those terms) are used as necessary. . The use of these terms is to facilitate understanding of the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meaning of these terms. Moreover, the part of the same code | symbol which appears in several drawing shows the same part or member.

<Embodiment 1>
1 to 3 show a semiconductor laser device 1 according to the present embodiment. As shown in FIG. 1, a cylindrical cap 10 covers the upper side of the disc-shaped stem 60. A glass member and a wavelength conversion member 30 are fixed to the upper surface 14 of the cap 10. The wavelength conversion member 30 contains a phosphor that absorbs the laser light L from the semiconductor laser element 2 and emits fluorescence of different wavelengths. Note that a lead used for connection to an external power source protrudes below the stem 60.

As shown in FIG. 2 and an enlarged view of FIG. 2, the semiconductor laser device 2 is fixed inside the semiconductor laser device 1 to a block portion 62 of the stem 60 protruding above the stem 60. . The semiconductor laser element 2 is covered with the cap 10 together with the block portion 62.
The cap 10 is provided with an opening 12 through which the laser light L from the semiconductor laser element 1 passes. And in this Embodiment, the opening part 12 is covered and sealed by the glass member 20 from the upper side.
In addition, in this invention, as a form which closes the opening part 12 with the glass member 20, in addition to covering the opening part 12 with the glass member 20 from the upper side of the cap 10 like FIG.2 and FIG.3, as FIG. Alternatively, the glass member 20 can be fitted into the opening 12 or the opening 12 can be covered from the inside of the cap 10 as shown in FIG.

As shown in an enlarged view in FIG. 3, a reflective film 40 is disposed between the glass member 20 and the wavelength conversion member 30. The function of the reflective film 40 is as follows.
When the laser light L passes through the wavelength conversion member 30, a part of the laser light L is irradiated on the wavelength conversion member 30, the wavelength is converted, and the traveling direction is changed by being scattered by the phosphor of the wavelength conversion member 30. . A part of the scattered light is directed toward the cap 10. If the scattered light reaches the cap 10, the scattered light is absorbed by the cap 10, and as a result, the light extraction efficiency of the semiconductor laser device 1 may be lowered. However, according to the present embodiment, since the reflective film 40 is disposed between the wavelength conversion member 30 and the cap 10, most of the scattered light is reflected by the reflective film 40 before reaching the cap 10. Is done. Therefore, the operation of the semiconductor laser element 2 is stable, and the light extraction efficiency of the semiconductor laser device 1 is increased.

  The continuous reflection film 40 as shown in FIG. 3 can be formed of a so-called wavelength selective film that transmits the laser light L and reflects the light whose wavelength is converted by the wavelength conversion member 30. Since most of the scattered light is wavelength-converted by the wavelength conversion member 30, it can be effectively reflected by the reflective film 40. Therefore, the effect of reducing scattered light reaching the cap 10 is high. Note that scattered light that has not undergone wavelength conversion (having the same wavelength as the laser light) passes through the reflective film 40.

  As the reflective film 40 having wavelength selectivity, at least one selected from the group consisting of Si, Ti, Zr, Nb, Ta, Al, and Mg is selected from at least one of oxide, nitride, and fluoride. A dielectric multilayer film in which two layers are repeatedly laminated can be used. The dielectric multilayer film is suitable for the reflective film 40 of the present embodiment because it can selectively reflect light having a desired wavelength by adjusting the thickness of the laminated film.

As shown in detail in FIG. 3, in the present embodiment, the glass member 20 is bonded to the upper surface of the cap 10 by the bonding layer 50. The bonding layer 50 can be formed from various adhesives and the like, but is particularly preferably formed from either a low-melting glass or a chemical change layer. In this specification, “low melting point glass” means SnO—P ₂ O ₅ series, CuO—P ₂ O ₅ series, Bi ₂ O ₃ series, and the like. The “chemical change layer” refers to a layer made of a member for adhering a metal and glass, and specifically includes Zn, Ca, Ba, Mg, Pb, Al, In, and Si. Examples thereof include a layer comprising a layer containing at least one selected from the group.

  When the bonding layer 50 is formed from a low melting point glass or a chemical change layer, there is an advantage that the adhesion between the glass member 40 and the cap member 10 can be enhanced. However, since the bonding layer 50 made of these materials has high light absorptance, when the scattered light scattered by the wavelength conversion member 30 reaches the bonding layer 50, most of the scattered light is absorbed. However, by disposing the reflective layer 40 between the wavelength conversion member 30 and the bonding layer 50 as in the present embodiment, most of the scattered light can be reflected before reaching the bonding layer 50. Therefore, the semiconductor laser device 1 according to the present embodiment has a structure in which the problem of light absorption by the bonding layer 50 is unlikely to occur. Yes.

The reflective layer 40 is preferably formed wide so that more scattered light can be reflected. From the viewpoint of suppressing scattered light reaching the cap 10, it is preferable that the outer edge of the reflective film 40 extends to the outside of the line BB connecting the outer edge of the wavelength conversion member 30 and the outer edge of the cap 10 ( (See FIG. 3). Thereby, the scattered light toward the cap 10 can be efficiently reflected by the reflective film 40.
Further, from the viewpoint of suppressing scattered light reaching the bonding layer 50, the outer edge of the reflective film 40 extends to the outside of a line CC connecting the outer edge of the wavelength conversion member 30 and the outer edge of the bonding layer 50. Is preferred (see FIG. 3). Thereby, the scattered light traveling toward the bonding layer 50 can be efficiently reflected by the reflective film 40.

Below, each structure is demonstrated in detail.
(Semiconductor laser element 2)
The semiconductor laser element 2 is not particularly limited, and an active layer is formed between an n-type semiconductor layer and a p-type semiconductor layer, and this active layer forms a multiple quantum well structure or a single quantum well structure. is there. In the case of a blue semiconductor laser element, it is preferably formed from a III-V nitride semiconductor.
Instead of the semiconductor laser element 2, an edge emitting diode can also be used. The edge-emitting diode is a kind in the case where the light-emitting diode is classified from the structural surface, and refers to a device that extracts light from the end surface of the active layer in the same manner as a semiconductor laser. This makes it possible to output light from the end face by raising the refractive index of the active layer to cause an optical waveguide action. In the case of the edge-emitting diode, the output light can be guided into the opening 12 of the cap 10 by reducing the light output area.

(Cap 10)
The cap 10 is preferably made of a material such as stainless steel, Kovar, Fe—Ni alloy, Ni, or Cu that can be welded to the stem.

(Glass member 20)
The glass member 20 preferably contains Al ₂ O ₃ , SiO ₂ , ZrO ₂ , ZnO, ZnSe, AlN, GaN, or the like.

(Wavelength conversion member 30)
For the wavelength conversion member 30, a material obtained by dispersing phosphor particles in a translucent base material is suitable.
As the translucent base material, translucent materials such as ceramics, glass and resin can be used. In particular, glass is superior in heat dissipation, light resistance, heat resistance and weather resistance compared to resin. It is suitable for the base material.
As the glass suitable for the base material, a glass containing Al ₂ O ₃ , SiO ₂ , ZrO ₂ , ZnO, ZnSe, AlN, GaN or the like is preferable.

As the phosphor dispersed in the wavelength conversion member 30, a phosphor that absorbs the laser light from the semiconductor laser element and converts the wavelength into light of a different wavelength is selected. For example, when a semiconductor laser element 2 having an emission spectrum peak wavelength in the range of 365 nm to 470 nm is used, the phosphor is a cadmium zinc sulfide attached with copper or a YAG system attached with cerium. Examples thereof include phosphors and LAG phosphors. In particular, at the time of high luminance and a long period of _{use, (Re 1-x Sm x} ) 3 (Al 1-y Ga y) 5 O 12: Ce (0 ≦ x <1,0 ≦ y ≦ 1, however, Re is at least one element selected from the group consisting of Y, Gd, La, and Lu. Moreover, the fluorescent substance containing at least 1 sort (s) selected from the group which consists of YAG, LAG, BAM, BAM: Mn, CCA, SCA, SCESN, SESN, CESN, CASBN, and CaAlSiN ₃ : Eu can be used.

(Reflective film 40)
As the reflective film 40, a wavelength selective film is used. For example, a dielectric multilayer in which at least two selected from at least one selected from the group consisting of Si, Ti, Zr, Nb, Ta, Al, and Mg are repeatedly stacked. A membrane is preferred.

(Junction layer 50)
For the bonding layer 50, a low melting point glass or a chemical change layer is suitable.
As the low melting point glass, SnO—P ₂ O ₅ series, CuO—P ₂ O ₅ series, Bi ₂ O ₃ series and the like can be used, and Bi ₂ O ₃ series is particularly preferable.
Further, as the chemical change layer, a layer containing at least one selected from the group consisting of Zn, Ca, Ba, Mg, Pb, Al, In, and Si can be used. A film containing Ca, Ba, and Al is particularly preferable.

<Embodiment 2>
The present embodiment is different from the first embodiment in that a hole 42 is formed in the reflective film 40 (see FIGS. 6 to 6). Other configurations are the same as those in the first embodiment.

  As shown in FIG. 6, the hole 42 of the reflective film 40 is formed at a position where the laser beam passes (that is, the position of the opening 12). In this specification, the “hole 42” refers to a portion where the reflection film 40 is not formed and the laser beam can pass. That is, nothing may be formed at the position of the hole 42, or a light-transmitting material that transmits the laser may be formed.

  In the present embodiment, since the hole 42 is formed in the reflective film 40, a material that reflects both laser light and scattered light can be used as the material of the reflective film 40. Most of the scattered light scattered by the phosphor of the wavelength conversion member 30 is wavelength-converted by the phosphor. However, a part of the scattered light includes light scattered without being wavelength-converted (that is, light having the same wavelength as the laser light from the semiconductor laser element 2). This embodiment is advantageous in that it can reflect both the wavelength-converted scattered light and the wavelength-converted scattered light. In addition, it is advantageous in that a metal film having a high reflectance can be used as the reflective film 40.

  From the viewpoint of increasing the reflection efficiency of scattered light, the hole 42 of the reflective film 40 is preferably small. However, if the hole 42 of the reflective film 40 is too small, a part of the laser light L cannot be passed through the reflective film 40 and is reflected. The reflected laser light L is absorbed by the cap 10 and the bonding layer 50, resulting in a problem that the light extraction efficiency is lowered. Therefore, it is preferable to make the hole 42 of the reflective film 40 as small as possible so that the laser light L can pass.

Further, the preferable dimension of the hole 42 of the reflective film 40 can also be expressed by the relationship with the dimension of the opening 12 of the cap 10.
As shown in FIG. 7, the laser light L spreads from the emission end face 2 a of the semiconductor laser element 2 at a spread angle R. Therefore, even when the dimension d ₁ of the opening 12 of the cap 10 is equal to the dimension d ₂ of the hole 42 of the reflective film 40, a part of the laser light L that has passed through the opening 12 cannot pass through the hole 42. There is a fear. Therefore, the relationship between the dimension of the opening 12, d _1, and the dimension d _{2 of the} hole 42 is preferably set as follows depending on the extent of the spread of the laser light L.

First, the dimension d ₁ of the opening 12 of the cap 10 is d ₁ ≦ {(Y + α) × tan (R / 2 + β)} × 2 Equation 1
When satisfying, it is preferable that the dimension d ₂ of the hole 42 of the reflective film 40 is d ₂ > d ₁ (see FIG. 8).
And
d ₁ > {(Y + α) × tan (R / 2 + β)} × 2 Equation 2
When satisfying, it is preferable that d ₂ ≦ d ₁ (see FIG. 9).
Here, in Formula 1 and Formula 2,
d ₁ : dimension (mm) of the opening 12 of the cap 10
d ₂ : dimension (mm) of the hole 42 of the reflective film 40
Y: Distance (mm) from the emitting end face 2a of the semiconductor laser element 2 to the inner face 16 of the cap 10 (see FIG. 7)
R: spread angle of laser beam L (°)
α: Dimensional tolerance (mm)
β: Dimensional tolerance (°)
It is. It should be noted that the tolerance when actually manufacturing the semiconductor laser device 1 can be estimated that α is 0.2 to 0.3 mm and β is 5 to 10 °.
Further, in this specification, “the spread angle R of the laser beam L” refers to the full angle at 1 / e ² of the peak intensity.

When the above expression 1 is satisfied, the dimension d ₁ of the opening 12 of the cap 10 is substantially equal to the limit dimension through which the laser light L can pass. Therefore, the dimension _{d 2} of the holes 42 of the reflection film 40, as shown in FIG. 8, it is preferable to be larger than the dimension _{d 1} of the opening 12.

When the above Expression 2 is satisfied, the dimension d ₁ of the opening 12 of the cap 10 is larger than the dimension necessary for passing the laser light L. Therefore, the dimension d ₂ of the holes 42 of the reflective film 40 in the following size d ₁ of the opening 12, the reflection film 40, so that it can be effectively reflected scattered light is scattered by the phosphor of the wavelength conversion member 30 It is preferable to do this.
That is, as shown in FIG. 9, when the dimension d ₂ of the hole 42 of the reflective film 40 is smaller than the dimension d ₁ of the opening 12 of the cap 10, the scattering that has progressed in the cap 10 through the hole 42. It is preferable because light is difficult to reach the cap 10 around the opening 12. Thereby, light absorption by the cap 10 can be suppressed, and the light extraction efficiency of the semiconductor laser device 1 can be increased.

As shown in FIGS. 10 and 11, when the shape of the opening 12 of the cap 10 is a funnel shape that narrows downward, the scattered light from the wavelength conversion member 30 is formed on the inner surface of the funnel-shaped opening 12. Since it can interrupt | block, there exists an advantage which can suppress that a scattered light returns in the cap 10 inside. Since the opening 12 has a funnel shape that narrows downward, the size of the opening 12 of the cap 10 is small on the inner surface 16 side (dimension d ₃ ) and larger on the upper surface 14 side (dimension d ₄ ). In such an opening 12, the relationship between the dimensions d ₃ and d _{4 of} the opening 12 and the dimension d ₂ of the hole 42 of the reflection film 40 is preferably set as follows.

First, the dimension d ₃ on the inner surface 16 side of the opening 12 of the cap 10 is d ₃ ≦ {(Y + α) × tan (R / 2 + β)} × 2 Equation 3
Further, the dimension d ₄ on the upper surface 14 side of the opening 12 is d ₄ ≦ {(Z + α) × tan (R / 2 + β)} × 2 Equation 4
When satisfying, it is preferable that the dimension d ₂ of the hole 42 of the reflective film 40 is d ₂ > d ₄ (see FIG. 10).

In addition, Expression 3 is satisfied, and the dimension d ₄ on the upper surface 14 side of the opening 12 is d ₄ > {(Z + α) × tan (R / 2 + β)} × 2.
When satisfying the above, it is preferable that the dimension d ₂ of the hole 42 of the reflective film 40 is d ₂ ≦ d ₄ (see FIG. 11).

Then, the dimension d ₃ on the inner surface 16 side of the opening 12 of the cap 10 is d ₃ > {(Y + α) × tan (R / 2 + β)} × 2 Equation 6
When satisfying the above, it is preferable that the dimension d ₂ of the hole 42 of the reflective film 40 is d ₂ ≦ d ₄ (see FIG. 11).
Here, in Formula 3 to Formula 6,
d ₂ : dimension (mm) of the hole 42 of the reflective film 40
d ₃ : dimension (mm) on the inner surface side of the opening 12 of the cap 10
d ₄ : Dimensions on the upper surface side of the opening 12 of the cap 10 (mm)
Y: Distance (mm) from the emitting end face 2a of the semiconductor laser element 2 to the inner face 16 of the cap 10 (see FIG. 7)
Z: distance (mm) from the emission end face 2a of the semiconductor laser element 2 to the upper surface side of the opening 12 of the cap 10 (see FIG. 7)
R: spread angle of laser beam L (°)
α: Dimensional tolerance (mm)
β: Dimensional tolerance (°)
It is. It should be noted that the tolerance when actually manufacturing the semiconductor laser device 1 can be estimated that α is 0.2 to 0.3 mm and β is 5 to 10 °.
Further, in this specification, “the spread angle R of the laser beam L” refers to the full angle at 1 / e ² of the peak intensity.

When Expression 3 is satisfied, the dimension d ₃ on the inner surface 16 side of the opening 12 of the cap 10 is substantially equal to the limit dimension through which the laser light L can pass. When Expression 4 is satisfied in addition to Expression 3, the dimension d ₄ on the upper surface 14 side of the opening 12 of the cap 10 is also substantially equal to the limit dimension through which the laser light L can pass. Therefore, the dimension _{d 2} of the holes 42 of the reflection film 40, as shown in FIG. 10, it is preferable to be larger than the dimension _{d 4} of the upper surface 14 side of the opening 12.

When Expression 3 is satisfied and Expression 5 is satisfied, the dimension d ₃ on the inner surface 16 side of the opening 12 of the cap 10 is substantially equal to the limit dimension through which the laser light L can pass, but the cap 10 The dimension d ₄ on the upper surface 14 side of the opening 12 is larger than the dimension necessary for passing the laser light L. Therefore, the dimension d ₂ of the hole 42 of the reflective film 40 is set to be equal to or smaller than the dimension d ₄ on the upper surface 14 side of the opening 12, so that the reflective film 40 effectively emits scattered light scattered by the phosphor of the wavelength conversion member 30. It is preferable to be able to reflect.
That is, as shown in FIG. 11, when the dimension d ₂ of the hole 42 in the reflective film 40 is smaller than the dimension d ₄ on the upper surface 14 side of the opening 12 of the cap 10, the internal direction of the cap 10 passes through the hole 42. Scattered light that has traveled in the forward direction is difficult to reach the cap 10 around the opening 12. Thereby, light absorption by the cap 10 can be suppressed, and the light extraction efficiency of the semiconductor laser device 1 can be increased.

If the above equation 6 is satisfied,
The inner surface 16 side of the dimension d ₃ of the opening 12 of the cap 10 is larger than the size necessary to pass the laser beam L. Since the opening 12 is a funnel shape narrowed down, the upper surface 14 side dimensions d ₄ of the opening 12 of the cap 10 is larger than the dimension d _3, as a result, the dimension d ₄ is the laser light L It is thought that it is larger than the size required to pass the. Therefore, similarly to the case where Expression 3 and Expression 5 are satisfied, the dimension d ₂ of the hole 42 of the reflection film 40 is set to be equal to or less than the dimension d ₄ on the upper surface 14 side of the opening 12, so that the reflection film 40 has the wavelength conversion member 30. It is preferable that the scattered light scattered by the phosphor can be effectively reflected (see FIG. 11).

  In the present embodiment, a metal film can be used as the material of the reflective film 40 in addition to the dielectric multilayer film as described above. In particular, a metal film including at least one selected from the group consisting of Ag, Al, and Au is preferable because it has a high reflectance in a wide wavelength range, so that the light extraction efficiency of the semiconductor laser device 1 can be increased.

Although the above formulas 1, 3 and 4 do not include the lower limits of the dimensions d ₁ , d ₃ and d ₄ of the opening 12 of the cap 10, when the semiconductor laser device 1 is actually manufactured, Is
d ₁ ≧ {(Y−α) × tan (R / 2−β)} × 2 Expression 7
d ₃ ≧ {(Y−α) × tan (R / 2−β)} × 2 Equation 8
d ₄ ≧ {(Z−α) × tan (R / 2−β)} × 2 Equation 9
Is preferably set. If d ₁ , d ₃ and d ₄ are smaller than this dimension, it is not preferable because a part of the laser beam L may not pass through the opening 12 of the cap 10.

  7 to 11, the glass member 20 is fixed to the upper surface 14 of the cap 10, and the opening 12 is covered with the glass member 20 from the upper side of the cap 10, but other than that, as shown in FIG. 4. Alternatively, the glass member 20 can be fitted into the opening 12 or the opening 12 can be covered from the inside of the cap 10 as shown in FIG.

  The semiconductor laser device 1 of the present invention can be used for projectors, special inspection devices that require high brightness, automobile headlights, various illuminations, and the like.

1 is a schematic perspective view of a semiconductor laser device according to the present invention. It is a schematic sectional drawing in the AA of FIG. 1 is a schematic partial enlarged cross-sectional view showing an example of a semiconductor laser device according to a first embodiment. FIG. 6 is a schematic partial enlarged cross-sectional view showing another example of the semiconductor laser device according to the first embodiment. FIG. 7 is a schematic partial enlarged cross-sectional view showing still another example of the semiconductor laser device according to the first embodiment. It is a typical partial expanded sectional view which shows an example of the semiconductor laser apparatus concerning this Embodiment 2. FIG. It is a typical partial expanded sectional view which shows the 1st example of the semiconductor laser apparatus concerning this Embodiment 2. FIG. It is a typical partial expanded sectional view which shows the 2nd example of the semiconductor laser apparatus concerning this Embodiment 2. FIG. FIG. 6 is a schematic partial enlarged cross-sectional view showing a third example of the semiconductor laser apparatus according to the second embodiment. It is a typical partial expanded sectional view which shows the 4th example of the semiconductor laser apparatus which concerns on this Embodiment 2. FIG. 9 is a schematic partial enlarged cross-sectional view showing a fifth example of the semiconductor laser apparatus according to the second embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor laser device 2 Semiconductor laser element 10 Cap 12 Opening part 14 Cap upper surface 16 Cap inner surface 20 Glass member 30 Wavelength conversion member 40 Reflective film 42 Hole 50 Bonding layer 60 Stem 62 Block part 64 Lead d ₁ Cap opening part Dimensions d ₂ Dimensions of holes in the reflective film d ₃ Dimensions on the inner surface side of the opening of the cap d ₄ Dimensions on the outer surface side of the opening of the cap ₄ L Laser light R Spread angle of the laser light

Claims (6)

A semiconductor laser device comprising a semiconductor laser element and a cap covering the semiconductor laser element,
The cap has an opening through which the laser beam of the semiconductor laser element passes,
A glass member that covers and covers the opening from above, and a wavelength conversion member that is positioned on the glass member and absorbs the laser light to emit light of different wavelengths,
The have a reflective film between the glass member and the wavelength conversion member, the outer edge of the reflection film, that extends between the outer edge of the wavelength conversion member to the outside than the line connecting the outer edge of the cap A semiconductor laser device.   The semiconductor laser device according to claim 1, wherein the reflective film has a hole through which the laser light passes.   3. The semiconductor laser device according to claim 2, wherein the reflective film includes at least one selected from the group consisting of Ag, Al, and Au.   2. The semiconductor laser device according to claim 1, wherein the reflection film is a film that transmits the laser light and reflects light that has been wavelength-converted by the wavelength conversion member. The glass member has a semiconductor laser device according to any one of claims 1 to 4, characterized in that it is joined to the cap by bonding layer comprising a low melting point glass or al.   The reflective film is formed by repeatedly laminating at least two selected from at least one oxide, nitride, or fluoride selected from the group consisting of Si, Ti, Zr, Nb, Ta, Al, and Mg. 6. The semiconductor laser device according to claim 1, comprising a dielectric multilayer film.

Images