JP5069559B2 - Ｃｍｏｓをモノリシックに集積した光素子 - Google Patents
Ｃｍｏｓをモノリシックに集積した光素子 Download PDFInfo
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- JP5069559B2 JP5069559B2 JP2007523020A JP2007523020A JP5069559B2 JP 5069559 B2 JP5069559 B2 JP 5069559B2 JP 2007523020 A JP2007523020 A JP 2007523020A JP 2007523020 A JP2007523020 A JP 2007523020A JP 5069559 B2 JP5069559 B2 JP 5069559B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/146—Superlattices; Multiple quantum well structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/062—Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/95—Circuit arrangements
- H10F77/953—Circuit arrangements for devices having potential barriers
- H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US59165804P | 2004-07-28 | 2004-07-28 | |
| US60/591,658 | 2004-07-28 | ||
| PCT/EP2005/008213 WO2006010618A1 (en) | 2004-07-28 | 2005-07-28 | Photonic devices monolithically integrated with cmos |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008508702A JP2008508702A (ja) | 2008-03-21 |
| JP2008508702A5 JP2008508702A5 (https=) | 2012-05-17 |
| JP5069559B2 true JP5069559B2 (ja) | 2012-11-07 |
Family
ID=35240919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007523020A Expired - Fee Related JP5069559B2 (ja) | 2004-07-28 | 2005-07-28 | Ｃｍｏｓをモノリシックに集積した光素子 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8963169B2 (https=) |
| EP (1) | EP1782481A1 (https=) |
| JP (1) | JP5069559B2 (https=) |
| CN (1) | CN101002326B (https=) |
| WO (1) | WO2006010618A1 (https=) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4920342B2 (ja) * | 2006-08-24 | 2012-04-18 | 浜松ホトニクス株式会社 | シリコン素子の製造方法 |
| FR2906403B1 (fr) * | 2006-09-21 | 2008-12-19 | Commissariat Energie Atomique | Procede de recuit de cellules photovoltaiques |
| CN102099870A (zh) | 2008-06-11 | 2011-06-15 | 因特瓦克公司 | 用于在太阳能电池制作中使用的专用注入系统和方法 |
| JP5003699B2 (ja) * | 2009-03-10 | 2012-08-15 | 株式会社日立製作所 | シリコン発光ダイオード、シリコン光トランジスタ、シリコンレーザー及びそれらの製造方法。 |
| WO2010108151A1 (en) * | 2009-03-20 | 2010-09-23 | Solar Implant Technologies, Inc. | Advanced high efficiency crystalline solar cell fabrication method |
| WO2010110781A1 (en) | 2009-03-23 | 2010-09-30 | Hewlett-Packard Development Company, L.P. | Indirect-bandgap-semiconductor, light-emitting diode |
| WO2010134334A1 (ja) * | 2009-05-22 | 2010-11-25 | 住友化学株式会社 | 半導体基板、電子デバイス、半導体基板の製造方法及び電子デバイスの製造方法 |
| EP2256812A1 (en) * | 2009-05-25 | 2010-12-01 | Nxp B.V. | Semiconductor device for increasing output power of a light emitting unit |
| KR101649004B1 (ko) * | 2009-05-26 | 2016-08-17 | 스미또모 가가꾸 가부시키가이샤 | 반도체 기판, 반도체 기판의 제조 방법 및 전자 디바이스 |
| US8749053B2 (en) * | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| EP2270840B1 (en) * | 2009-06-29 | 2020-06-03 | IMEC vzw | Method for manufacturing an III-V material substrate and the substrate thereof |
| TWI389329B (zh) * | 2009-06-29 | 2013-03-11 | Au Optronics Corp | 平面顯示面板、紫外光感測器及其製造方法 |
| EP3188215A3 (en) * | 2010-02-09 | 2017-09-13 | Intevac, Inc. | An adjustable shadow mask assembly for use in solar cell fabrications |
| US8237177B2 (en) * | 2010-07-12 | 2012-08-07 | National Semiconductor Corporation | Fully silicon ALED-photodiode optical data link module |
| JP2012156310A (ja) * | 2011-01-26 | 2012-08-16 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法、および電子機器 |
| TWI506719B (zh) | 2011-11-08 | 2015-11-01 | 因特瓦克公司 | 基板處理系統及方法 |
| WO2013118248A1 (ja) | 2012-02-06 | 2013-08-15 | 株式会社日立製作所 | 発光素子 |
| EP2626917B1 (en) * | 2012-02-10 | 2017-09-27 | IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik | A CMOS-compatible germanium tunable Laser |
| US9425341B2 (en) | 2012-10-08 | 2016-08-23 | Agency For Science, Technology And Research | P-I-N photodiode with dopant diffusion barrier layer |
| US9318332B2 (en) | 2012-12-19 | 2016-04-19 | Intevac, Inc. | Grid for plasma ion implant |
| WO2015042610A2 (en) | 2013-09-23 | 2015-03-26 | Quantum Semiconductor Llc | Superlattice materials and applications |
| CN103787264B (zh) * | 2014-01-21 | 2016-06-15 | 华进半导体封装先导技术研发中心有限公司 | 一种应用于高速宽带光互连的硅通孔器件的制造方法及其器件 |
| WO2015148527A1 (en) * | 2014-03-26 | 2015-10-01 | University Of Houston System | Radiation and temperature hard multi-pixel avalanche photodiodes |
| US9874693B2 (en) | 2015-06-10 | 2018-01-23 | The Research Foundation For The State University Of New York | Method and structure for integrating photonics with CMOs |
| WO2017127116A1 (en) * | 2016-01-22 | 2017-07-27 | Hewlett Packard Enterprise Development Lp | Cmos-photonics co-design |
| CN105842782B (zh) * | 2016-05-05 | 2019-04-16 | 湖南大学 | 一种采用石墨烯光电器件的单片光电集成电路 |
| US10403484B2 (en) * | 2017-04-18 | 2019-09-03 | University Of Southern California | Optical modulation of on-chip thermionic emission using resonant cavity coupled electron emitters |
| CN109904181B (zh) * | 2019-02-22 | 2022-09-02 | 上海集成电路研发中心有限公司 | 一种高填充因子的cmos成像传感器及其制作方法 |
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| US7160753B2 (en) * | 2004-03-16 | 2007-01-09 | Voxtel, Inc. | Silicon-on-insulator active pixel sensors |
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| US11043529B2 (en) | 2021-06-22 |
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| CN101002326B (zh) | 2012-07-18 |
| EP1782481A1 (en) | 2007-05-09 |
| US8963169B2 (en) | 2015-02-24 |
| US20080001139A1 (en) | 2008-01-03 |
| JP2008508702A (ja) | 2008-03-21 |
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