JP5062005B2 - Power semiconductor device - Google Patents

Power semiconductor device Download PDF

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JP5062005B2
JP5062005B2 JP2008097087A JP2008097087A JP5062005B2 JP 5062005 B2 JP5062005 B2 JP 5062005B2 JP 2008097087 A JP2008097087 A JP 2008097087A JP 2008097087 A JP2008097087 A JP 2008097087A JP 5062005 B2 JP5062005 B2 JP 5062005B2
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frame portion
power semiconductor
integrated circuit
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JP2009252885A (en
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明 商
徹 岩上
智典 田中
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Mitsubishi Electric Corp
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Description

本発明は、電力半導体装置に係る発明であって、特に、ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）等の電力半導体素子および制御用集積回路等が搭載されたトランスファーモールド型電力半導体装置に関するものである。   The present invention relates to a power semiconductor device, and more particularly to a transfer mold type power semiconductor device in which a power semiconductor element such as an IGBT (Insulated Gate Bipolar Transistor) and a control integrated circuit are mounted.

産業・自動車・ＯＡ・家電製品などの電力制御やモータ制御に、ＩＧＢＴなど複数のスイッチング素子やフリーホイールダイオードなどの電力半導体素子と、前記スイッチング素子の駆動や短絡・過熱などの異常状態からの保護を行う制御用集積回路を１パッケージに搭載した電力半導体装置、いわゆるＩＰＭ（Ｉｎｔｅｌｌｉｇｅｎｔ Ｐｏｗｅｒ Ｍｏｄｕｌｅ）が使用されている。こうしたＩＰＭにおいては、制御用集積回路内に集積されたダイオードなどの感温素子や別途ＩＰＭ内に設けられたサーミスタなどの温度センサによって電力半導体素子の発熱が検知され、電力半導体素子が過熱状態にある場合は前記制御用集積回路によってその駆動が速やかに停止させられる。   For power control and motor control of industries, automobiles, OA, home appliances, etc., multiple switching elements such as IGBTs and power semiconductor elements such as free wheel diodes, and protection from abnormal conditions such as driving, short-circuiting and overheating of the switching elements A power semiconductor device in which a control integrated circuit for performing the above is mounted in one package, so-called IPM (Intelligent Power Module) is used. In such an IPM, heat generation of the power semiconductor element is detected by a temperature sensor such as a diode integrated in the control integrated circuit or a temperature sensor such as a thermistor separately provided in the IPM, and the power semiconductor element is overheated. In some cases, the driving is quickly stopped by the control integrated circuit.

上記のような電力半導体装置においては、スイッチング素子で発生した熱を感温素子や温度センサに効率よく伝導し、精度よく温度を測定することが必要である。そこで、電力半導体装置の放熱板と電力半導体素子が載置される金属配線層の間に、放熱板よりも熱伝導率の高い材料よりなる良熱伝導層を設けて、この良熱伝導層に温度センサを取りつけるようにすることで、スイッチング素子の作動時に発生する熱が、金属配線層及び良熱伝導層を介して効率よく温度センサに伝達されるといった構造が提案されている（たとえば特許文献１参照）。   In the power semiconductor device as described above, it is necessary to efficiently conduct the heat generated by the switching element to the temperature sensitive element or the temperature sensor and to measure the temperature with high accuracy. Therefore, a good heat conductive layer made of a material having a higher thermal conductivity than the heat sink is provided between the heat sink of the power semiconductor device and the metal wiring layer on which the power semiconductor element is placed. A structure has been proposed in which heat generated during operation of the switching element is efficiently transferred to the temperature sensor through the metal wiring layer and the good heat conduction layer by attaching the temperature sensor (for example, Patent Documents). 1).

特開２００４−３１４８５号公報 （段落０００６、第２図）JP 2004-31485 A (paragraph 0006, FIG. 2)

しかし、従来技術に係る電力半導体装置では、以下のような解決すべき問題があった。
（１）特許文献１記載の従来技術においては発熱部であるスイッチング素子と温度センサとの距離が比較的遠く、スイッチング素子で発生した熱が金属配線層及び良熱伝導層を介して温度センサに伝達するまで時間がかかるため、過熱状態の検出に時間的遅れが生じる。一般に半導体素子であるスイッチング素子が過熱状態になった場合は速やかにその駆動を停止させる必要があるため、前記時間的遅れは信頼性上問題となる。
（２）また、特許文献１記載の従来技術においては良熱伝導層を載置したりさらには放熱板に凹み加工を施す必要があり、工数、コストが増加する。 However, the power semiconductor device according to the prior art has the following problems to be solved.
(1) In the prior art described in Patent Document 1, the distance between the switching element, which is a heat generating part, and the temperature sensor is relatively long, and the heat generated in the switching element is transferred to the temperature sensor via the metal wiring layer and the good heat conduction layer. Since it takes time to transmit, there is a time delay in detecting the overheat state. Generally, when a switching element, which is a semiconductor element, is overheated, it is necessary to quickly stop the driving thereof, and thus the time delay becomes a problem in reliability.
(2) Moreover, in the prior art of patent document 1, it is necessary to mount a heat conductive layer, and also to dent a heat sink, and a man-hour and cost increase.

本発明においては、上記問題を解決するために、電力半導体素子と、前記電力半導体素子を制御するための制御用集積回路と、前記電力半導体素子が一方主面に搭載される第１フレーム部、前記制御用集積回路が一方主面に搭載される第２フレーム部、前記第１フレーム部に接続される第１リード端子および前記第２フレーム部に接続される第２リード端子を有し、一枚板状からなるリードフレーム部と、前記電力半導体素子および前記制御用集積回路を含む前記リードフレーム部を封止するモールド樹脂と、前記第１フレーム部の一方主面と反対側の他方主面と対向して配置される放熱板とを備え、前記第１フレーム部は、前記第１リード端子とリード段差部を介して支持され、前記第２フレーム部と略平行かつ、前記第２フレーム部よりも前記モールド樹脂の外面に接近するように配置され、前記放熱板は、前記第１フレーム部と対向する第１面と反対側の第２面を有し、前記第２面の少なくとも一部が前記モールド樹脂の外部に露出するとともに、少なくとも一部が前記第２フレーム部側に延伸している延伸部を有し、前記延伸部の前記第２フレーム部と対向する面と、前記第２フレーム部の一方主面と反対側の他方主面との距離が、前記第１フレーム部の他方主面と前記放熱板の第１面との距離以下であり、前記制御用集積回路には、温度を検出する感温素子が集積されることを特徴とする半導体装置が提供される。 In the present invention, in order to solve the above problems, a power semiconductor element, a control integrated circuit for controlling the power semiconductor element, a first frame portion on which the power semiconductor element is mounted on one main surface, the second frame portion and the control integrated circuit whereas mounted on the main surface, have a second lead terminal connected to the first lead terminal and the second frame portion is connected to said first frame portion, one A lead frame portion made of a plate, a mold resin for sealing the lead frame portion including the power semiconductor element and the control integrated circuit, and the other main surface opposite to the one main surface of the first frame portion And the first frame portion is supported via the first lead terminal and the lead step portion, is substantially parallel to the second frame portion, and the second frame portion. Than The heat sink is disposed so as to approach the outer surface of the mold resin, and the heat sink has a second surface opposite to the first surface facing the first frame portion, and at least a part of the second surface is the A surface that is exposed to the outside of the mold resin and has at least a portion extending toward the second frame portion; a surface of the extending portion that faces the second frame portion; and the second frame portion. The distance between the one main surface and the other main surface on the opposite side is equal to or less than the distance between the other main surface of the first frame portion and the first surface of the heat sink. A semiconductor device is provided in which temperature sensing elements to be detected are integrated.

本発明の電力半導体装置は、スイッチング素子で発生した熱が放熱板および延伸部を伝わり、さらに延伸部の近傍に載置された制御用集積回路に効率よく伝達されるため、精度よく温度を測定することができる。
また、放熱板の延伸部はスイッチング素子や制御用集積回路とともにモールド樹脂内に封止されており、スイッチング素子で発生した熱の制御用集積回路への伝達経路が比較的短いため、スイッチング素子が過熱状態になった場合において速やかにその駆動を停止させることができる。
また、本発明の実現には放熱板の一部を延伸し延伸部とするだけでよく、追加の部材や切削加工などは必要でないため、工数やコストの増加を防ぐことができる。 In the power semiconductor device of the present invention, the heat generated in the switching element is transmitted through the heat sink and the extending portion, and is further efficiently transmitted to the control integrated circuit placed in the vicinity of the extending portion, so that the temperature is accurately measured. can do.
In addition, the extending portion of the heat sink is sealed in the mold resin together with the switching element and the control integrated circuit, and the transmission path of the heat generated in the switching element to the control integrated circuit is relatively short. In the case of overheating, the driving can be stopped quickly.
Moreover, in order to implement | achieve this invention, it is only necessary to extend | stretch a part of heat sink and to make it an extending | stretching part, and since an additional member, cutting, etc. are unnecessary, the increase in a man-hour and cost can be prevented.

実施の形態１
この発明を実施するための実施の形態１における電力半導体装置について以下説明する。電力半導体装置の側面断面図を図１に示し、半導体素子搭載およびワイヤボンディング後の電力半導体装置における内部構成を示す平面図を図４に示す。 Embodiment 1
A power semiconductor device according to the first embodiment for carrying out the present invention will be described below. FIG. 1 is a side sectional view of the power semiconductor device, and FIG. 4 is a plan view showing the internal configuration of the power semiconductor device after mounting the semiconductor element and wire bonding.

既に背景技術の項で説明した通り、電力半導体装置においては、ＩＧＢＴなど複数のスイッチング素子やフリーホイールダイオードなどの電力半導体素子と、前記スイッチング素子の駆動や短絡・過熱などの異常状態からの保護を行う制御用集積回路が１パッケージに搭載されている。これらの電力半導体素子と制御用集積回路は、例えばエポキシ樹脂などのモールド樹脂によって封止されている。また、電力半導体装置の使用者によって、電力半導体装置の裏面に接触するように放熱フィン（図示せず）が設置される。   As already explained in the section of the background art, in power semiconductor devices, a plurality of switching elements such as IGBTs and power semiconductor elements such as free wheel diodes and protection from abnormal states such as driving of the switching elements, short-circuiting and overheating, and the like. The integrated circuit for control to be performed is mounted in one package. These power semiconductor elements and the control integrated circuit are sealed with a mold resin such as an epoxy resin. Further, a heat radiating fin (not shown) is installed by the user of the power semiconductor device so as to come into contact with the back surface of the power semiconductor device.

図４を参照して、本実施の形態に係る電力半導体装置の内部構造について詳細に説明する。   With reference to FIG. 4, the internal structure of the power semiconductor device according to the present embodiment will be described in detail.

電力半導体素子としてのＩＧＢＴチップ４およびフリーホイールダイオード５は第１フレーム部２ａの一方主面に搭載され、所定のリード端子にアルミニウム線のボンディングワイヤ１０によって電気的に接続される。また制御用集積回路６は同様に第２フレーム部２ｃの一方主面に搭載され、所定のリード端子に金線などのボンディングワイヤ８によって電気的に接続される。なお、金線ボンディングワイヤ８のフレーム側接続点には接着性および電気伝導性向上の目的で部分銀メッキ処理が施されている。   An IGBT chip 4 and a free wheel diode 5 as power semiconductor elements are mounted on one main surface of the first frame portion 2a, and are electrically connected to predetermined lead terminals by an aluminum wire bonding wire 10. Similarly, the control integrated circuit 6 is mounted on one main surface of the second frame portion 2c, and is electrically connected to a predetermined lead terminal by a bonding wire 8 such as a gold wire. The frame-side connection point of the gold wire bonding wire 8 is subjected to partial silver plating for the purpose of improving adhesiveness and electrical conductivity.

ＩＧＢＴチップ４と制御用集積回路６との接続は中継リード２ｆによって行う。すなわち、制御用集積回路６と中継リード２ｆが金線ボンディングワイヤ８にて接続され、同じ中継リード２ｆとＩＧＢＴチップ４がアルミニウム線ボンディングワイヤにて接続される。   The IGBT chip 4 and the control integrated circuit 6 are connected by the relay lead 2f. That is, the control integrated circuit 6 and the relay lead 2f are connected by the gold wire bonding wire 8, and the same relay lead 2f and the IGBT chip 4 are connected by the aluminum wire bonding wire.

図１を参照して、本実施の形態に係る電力半導体装置の側面から見た内部構造について詳細に説明する。   With reference to FIG. 1, the internal structure seen from the side of the power semiconductor device according to the present embodiment will be described in detail.

既に図４にて説明した通り、ＩＧＢＴチップ４およびフリーホイールダイオード５はアルミニウム線のボンディングワイヤ１０によってに所定のリードフレームと電気的に接続され、また制御用集積回路６は金線ボンディングワイヤ８によって所定のリードフレームと電気的に接続される。   As already described with reference to FIG. 4, the IGBT chip 4 and the free wheel diode 5 are electrically connected to a predetermined lead frame through an aluminum wire bonding wire 10, and the control integrated circuit 6 is connected through a gold wire bonding wire 8. It is electrically connected to a predetermined lead frame.

ここで前記第１フレーム部２ａ、前記第２フレーム部２ｃ、前記第１フレーム部に接続される第１リード端子２ｂおよび前記第２フレーム部に接続される第２リード端子２ｄを含むリードフレーム部２の製造行程を説明する。
前記リードフレーム部２は、導電性、熱伝導性に優れた銅などの材質が用いられ、一枚板状の銅板をパンチングなどによって所定の形状に打ち抜かれると同時に、次の段落で説明する前記第１フレーム部２ａの沈め加工が施される。さらに、前記第１フレーム部２ａ、前記第２フレーム部２ｃの一方主面およびボンディングワイヤ８が接続される所定のリードフレームのボンディング領域に銀などでメッキ処理が施される。 Here, the lead frame part including the first frame part 2a, the second frame part 2c, the first lead terminal 2b connected to the first frame part, and the second lead terminal 2d connected to the second frame part. The manufacturing process 2 will be described.
The lead frame portion 2 is made of a material such as copper having excellent conductivity and thermal conductivity, and a single-plate copper plate is punched into a predetermined shape by punching or the like, and will be described in the next paragraph. The first frame portion 2a is sunk. Further, a plating process is performed with silver or the like on a bonding region of a predetermined lead frame to which one main surface of the first frame portion 2a and the second frame portion 2c and the bonding wire 8 are connected.

前記第１フレーム部２ａは、第１リード端子２ｂから延伸されたリード段差部２ｅを介して支持され、前記第１リード端子２ｂよりモールド樹脂１２の下面寄りに沈められ、前記第２フレーム部２ｃと略平行であるように配置される。   The first frame portion 2a is supported via a lead step portion 2e extending from the first lead terminal 2b, and is sunk closer to the lower surface of the mold resin 12 than the first lead terminal 2b, and the second frame portion 2c. And so as to be substantially parallel to each other.

また、前記第１フレーム部２ａの他方主面と、その一方主面が近接して対向するように放熱板１４が配置される。前記放熱板１４は熱伝導性に優れた銅・アルミなどが使用される。前記放熱板１４の他方主面はモールド樹脂１２の外部に露出しており、図示しない放熱フィンなどが接触するように設けられる。   The heat radiating plate 14 is disposed so that the other main surface of the first frame portion 2a and the one main surface are close to each other and face each other. The heat radiating plate 14 is made of copper, aluminum or the like having excellent thermal conductivity. The other main surface of the heat radiating plate 14 is exposed to the outside of the mold resin 12 and is provided so that a heat radiating fin (not shown) is in contact therewith.

前記第１フレーム部２ａと前記放熱板１４との間には、０．２ｍｍ程度の厚さである電気絶縁性と熱伝導性に優れた絶縁シート１３が介在し、両者間を電気的に絶縁するとともに熱的に結合させる。絶縁シート１３と放熱板１４は少なくとも第１フレーム部２ａと対向する範囲全面にある。   Between the first frame portion 2a and the heat radiating plate 14, an insulating sheet 13 having a thickness of about 0.2 mm and excellent in electrical insulation and thermal conductivity is interposed, and the two are electrically insulated. And thermally coupled. The insulating sheet 13 and the heat radiating plate 14 are at least over the entire area facing the first frame portion 2a.

前記絶縁シート１３は例えば、基剤としてエポキシ樹脂を使用し、熱伝導率を調整するフィラーとしてＢＮ、ＳｉＯ２、Ｓｉ３Ｎ４、Ａｌ２Ｏ３、ＡｌＮのいずれかを含む。前記絶縁シート１３の熱伝導率は３〜１５Ｗ／ｍ・Ｋ程度であることが望ましい。 The insulating sheet 13 uses, for example, an epoxy resin as a base, and contains BN, SiO 2 , Si 3 N 4 , Al 2 O 3 , or AlN as a filler for adjusting the thermal conductivity. The thermal conductivity of the insulating sheet 13 is preferably about 3 to 15 W / m · K.

また前記放熱板１４は、前記第２フレーム部２ｃ側すなわち制御用集積回路６が載置されている方向に延伸し、その厚みが放熱板１４の前記第１フレーム部２ａと対向している部分の厚みより大である延伸部１５を有している。   The heat radiating plate 14 extends in the second frame portion 2c side, that is, the direction in which the control integrated circuit 6 is placed, and the thickness of the heat radiating plate 14 faces the first frame portion 2a. It has the extending | stretching part 15 which is larger than thickness.

前記延伸部１５は前記第２フレーム部２ｃの下側に潜り込むように延伸され、さらに第２フレーム部２ｃの他方主面と近接するよう電力半導体装置の内部方向に厚くなっている。すなわち、前記放熱板１４および延伸部１５は半導体装置の外面側は面一となっており、放熱フィンなどの取り付けに支障をきたすことはない。   The extending portion 15 is extended so as to sink under the second frame portion 2c, and is further thickened in the internal direction of the power semiconductor device so as to be close to the other main surface of the second frame portion 2c. That is, the heat radiating plate 14 and the extending portion 15 are flush with each other on the outer surface side of the semiconductor device and do not hinder the mounting of the heat radiating fins.

前記延伸部１５と前記第２フレーム部２ｃとの間隔ｈ２は、両者を熱結合させる必要があるため少なくとも前記絶縁シート１３の厚みｈ１以下であることが望ましい。一般に延伸部１５を含む放熱板１４と、第２フレーム部２ｃは同電位（接地電位）であるため、ｈ２＝０すなわち両者が接触してもよい。さらに好ましくは前記絶縁シート１３を前記延伸部１５と前記第２フレーム部２ｃ間に介し両者を接触させることが望ましい。   The distance h2 between the extending portion 15 and the second frame portion 2c is preferably at least the thickness h1 of the insulating sheet 13 because it is necessary to thermally couple them. Generally, since the heat sink 14 including the extending portion 15 and the second frame portion 2c are at the same potential (ground potential), h2 = 0, that is, they may be in contact with each other. More preferably, it is desirable to bring the insulating sheet 13 into contact with each other through the extending portion 15 and the second frame portion 2c.

なお、前記延伸部１５を含む放熱板１４は、一様板状の金属板などをプレス加工などにより、一体成型することができる。   In addition, the heat sink 14 including the extending portion 15 can be integrally formed by pressing a uniform plate-shaped metal plate or the like.

このような構造により、ＩＧＢＴチップ１４にて発生した熱は、図１の矢印で示した経路の通り、第１リードフレーム部２ａ、絶縁シート１３、放熱板１４、延伸部１５、第２フレーム部２ｃを通って制御用集積回路６内の感温素子に効率よく速やかに伝達されるため、ＩＧＢＴチップ６の温度を精度よく測定することができる。   With such a structure, the heat generated in the IGBT chip 14 follows the path indicated by the arrow in FIG. 1, the first lead frame portion 2 a, the insulating sheet 13, the heat sink 14, the extending portion 15, and the second frame portion. The temperature of the IGBT chip 6 can be measured with high accuracy because it is efficiently and promptly transmitted to the temperature sensitive element in the control integrated circuit 6 through 2c.

実施の形態２
図２に本発明の実施の形態２における電力半導体装置の側面断面図を示す。なお、各図において実施の形態１と同一の構成には同一の符号を付し、重複する説明については省略する。 Embodiment 2
FIG. 2 is a side sectional view of the power semiconductor device according to the second embodiment of the present invention. In each figure, the same components as those in the first embodiment are denoted by the same reference numerals, and redundant description is omitted.

本実施の形態２においては、温度測定のために制御用集積回路６内に設けた感温素子の代わりにサーミスタなどの個別の温度センサ７を別途設けている。温度センサ７は前記延伸部１５の上面に直に載置されるとともに、前記制御用集積回路６とボンディングワイヤ８によって電気的に接続され、温度センサ７が感知した温度データは制御用集積回路６に送られる。   In the second embodiment, a separate temperature sensor 7 such as a thermistor is separately provided in place of the temperature sensing element provided in the control integrated circuit 6 for temperature measurement. The temperature sensor 7 is mounted directly on the upper surface of the extending portion 15 and is electrically connected to the control integrated circuit 6 by the bonding wire 8. The temperature data sensed by the temperature sensor 7 is the control integrated circuit 6. Sent to.

また、延伸部１５は上部に前記温度センサ７を載置し、ワイヤボンディングする必要があるため、実施の形態１のように第２フレーム部２ｃの下側に潜り込むように延伸する必要はなく、第１フレーム２ａとの間に位置するよう延伸すれば良い。   Further, since the extending part 15 needs to place the temperature sensor 7 on the upper part and wire bonding, it is not necessary to extend so as to sink under the second frame part 2c as in the first embodiment. What is necessary is just to extend | stretch so that it may be located between the 1st frames 2a.

さらに、前記延伸部１５のモールド樹脂１２外面からの厚みｈ４は、モールド樹脂１２外面から前記第１フレーム部２ａの一方主面までの高さｈ３と同一にしている。これにより、前記温度センサ７のボンディング高さがＩＧＢＴチップ４およびフリーホイールダイオード５のボンディング高さと同一とすることができる。   Further, the thickness h4 of the extending portion 15 from the outer surface of the mold resin 12 is the same as the height h3 from the outer surface of the mold resin 12 to the one main surface of the first frame portion 2a. Thereby, the bonding height of the temperature sensor 7 can be made the same as the bonding height of the IGBT chip 4 and the free wheel diode 5.

このような構成により、個別の温度センサ７が延伸部１５の上面に直に載置されることで熱結合がさらに密となるため、ＩＧＢＴチップ４の発熱をより精度よく検出することができる。さらに、前記温度センサ７のボンディング高さがＩＧＢＴチップ４およびフリーホイールダイオード５のボンディング高さと同一としたため、ワイヤボンディング条件を同一とすることができ、組立性の低下を防止することができる。   With such a configuration, since the individual temperature sensors 7 are placed directly on the upper surface of the extending portion 15, the thermal coupling becomes more dense, so that the heat generation of the IGBT chip 4 can be detected with higher accuracy. Furthermore, since the bonding height of the temperature sensor 7 is the same as the bonding height of the IGBT chip 4 and the free wheel diode 5, the wire bonding conditions can be made the same and the assembling can be prevented from being lowered.

実施の形態３
図３に本発明の実施の形態２における電力半導体装置の側面断面図を示す。なお、各図において実施の形態１、２と同一の構成には同一の符号を付し、重複する説明については省略する。 Embodiment 3
FIG. 3 shows a side sectional view of the power semiconductor device according to the second embodiment of the present invention. In each figure, the same components as those in the first and second embodiments are denoted by the same reference numerals, and redundant description is omitted.

本実施の形態３においては、実施の形態２と同様、延伸部１５の上面に温度センサ７を別途設けているが、前記延伸部１５のモールド樹脂１２外面からの厚みｈ５は、モールド樹脂１２外面から前記第２フレーム部２ｃの一方主面までの高さｈ６と同一にしている。これにより、前記温度センサ７のボンディング高さが制御用集積回路６のボンディング高さと同一としてもよい。   In the third embodiment, as in the second embodiment, the temperature sensor 7 is separately provided on the upper surface of the extending portion 15, but the thickness h5 of the extending portion 15 from the outer surface of the mold resin 12 is the outer surface of the mold resin 12. To a height h6 from the second frame portion 2c to the one main surface. Thereby, the bonding height of the temperature sensor 7 may be the same as the bonding height of the control integrated circuit 6.

このような構成により、実施の形態２と同様、高精度な温度測定および組立性低下の防止といった効果だけでなく、温度センサ７と制御用集積回路６との距離が比較的小さいため、両者を電気的に接続するボンディングワイヤ８の長さが短くすることができ、材料費上昇の防止や温度データへのノイズ混入を防止するといった効果を奏する。   With such a configuration, as in the second embodiment, not only the effects of high-precision temperature measurement and prevention of deterioration in assemblability but also the distance between the temperature sensor 7 and the control integrated circuit 6 are relatively small. The length of the bonding wire 8 to be electrically connected can be shortened, and effects such as prevention of an increase in material cost and mixing of noise into temperature data are obtained.

以上、本発明の具体的な実施の形態を説明したが、本発明はこれに限らず種々の変形が可能である。例えば、本発明ではスイッチング素子としてＩＧＢＴを用いる例を示したが、その他ＭＯＳＦＥＴやパワートランジスタなどの他のスイッチング素子を用いてもよいので本発明に含まれる。また、実施の形態２，３において温度センサ７が感知した温度データは制御用集積回路６に送られる例を説明したが、温度データを直接電力半導体装置外部に出力するような構成としてもよく、温度センサ７と外部出力用のリード端子をボンディングワイヤにて接続するようなことは当業者にとって容易に想到可能であるので、本発明の範囲に含まれる。
The specific embodiment of the present invention has been described above, but the present invention is not limited to this, and various modifications are possible. For example, in the present invention, an example in which an IGBT is used as a switching element has been described. However, other switching elements such as a MOSFET and a power transistor may be used, and the present invention is included in the present invention. In the second and third embodiments, the temperature data sensed by the temperature sensor 7 has been described as being sent to the control integrated circuit 6. However, the temperature data may be directly output to the outside of the power semiconductor device. It is easily conceivable for those skilled in the art to connect the temperature sensor 7 and the lead terminal for external output with a bonding wire, and is included in the scope of the present invention.

本発明の実施の形態１に係る電力半導体装置の側面断面図である。It is side surface sectional drawing of the power semiconductor device which concerns on Embodiment 1 of this invention. 本発明の実施の形態２に係る電力半導体装置の側面断面図である。It is side surface sectional drawing of the power semiconductor device which concerns on Embodiment 2 of this invention. 本発明の実施の形態３に係る電力半導体装置の側面断面図である。It is side surface sectional drawing of the power semiconductor device which concerns on Embodiment 3 of this invention. 本発明の実施の形態に１〜３に係る電力半導体装置の半導体素子搭載およびワイヤボンディング後の内部構成を示す平面図である。It is a top view which shows the internal structure after the semiconductor element mounting of the power semiconductor device which concerns on embodiment of this invention, and wire bonding, and wire bonding.

符号の説明Explanation of symbols

２ａ． 第１フレーム部 ２ｂ．第１リード端子 ２ｃ．第２フレーム部 ２ｄ．第２リード端子 ２ｅ．リード段差部 ４．ＩＧＢＴチップ ５．フリーホイールダイオード ６．制御用集積回路 ７．温度センサ １２．モールド樹脂 １３．絶縁シート １４．放熱板 １５．延伸部 2a. 1st frame part 2b. First lead terminal 2c. Second frame part 2d. Second lead terminal 2e. Lead step part 4. IGBT chip 5. Freewheel diode 6. 6. Integrated circuit for control Temperature sensor 12. Mold resin 13. Insulating sheet 14. Heat sink 15. Extension part

Claims (4)

電力半導体素子と、
前記電力半導体素子を制御するための制御用集積回路と、
前記電力半導体素子が一方主面に搭載される第１フレーム部、前記制御用集積回路が一方主面に搭載される第２フレーム部、前記第１フレーム部に接続される第１リード端子および前記第２フレーム部に接続される第２リード端子を有し、一枚板状からなるリードフレーム部と、
前記電力半導体素子および前記制御用集積回路を含む前記リードフレーム部を封止するモールド樹脂と、
前記第１フレーム部の一方主面と反対側の他方主面と対向して配置される放熱板と、
を備え、
前記第１フレーム部は、前記第１リード端子とリード段差部を介して支持され、前記第２フレーム部と略平行かつ、前記第２フレーム部よりも前記モールド樹脂の外面に接近するように配置され、
前記放熱板は、前記第１フレーム部と対向する第１面と反対側の第２面を有し、前記第２面の少なくとも一部が前記モールド樹脂の外部に露出するとともに、少なくとも一部が前記第２フレーム部側に延伸している延伸部を有し、
前記延伸部の前記第２フレーム部と対向する面と、前記第２フレーム部の一方主面と反対側の他方主面との距離が、前記第１フレーム部の他方主面と前記放熱板の第１面との距離以下であり、
前記制御用集積回路には、温度を検出する感温素子が集積されることを特徴とする半導体装置。 A power semiconductor element;
A control integrated circuit for controlling the power semiconductor element;
A first frame portion on which the power semiconductor element is mounted on one main surface; a second frame portion on which the control integrated circuit is mounted on one main surface; a first lead terminal connected to the first frame portion; a lead frame portion have a second lead terminal connected to the second frame part, consisting of a single plate-like,
A mold resin for sealing the lead frame portion including the power semiconductor element and the control integrated circuit;
A heat dissipating plate disposed to face the other main surface opposite to the one main surface of the first frame part;
With
The first frame part is supported via the first lead terminal and the lead step part, and is disposed so as to be substantially parallel to the second frame part and closer to the outer surface of the mold resin than the second frame part. And
The heat sink has a second surface opposite to the first surface facing the first frame portion, and at least a part of the second surface is exposed to the outside of the mold resin, and at least a part of the second surface is exposed. An extending portion extending toward the second frame portion;
The distance between the surface of the extending portion facing the second frame portion and the other main surface opposite to the one main surface of the second frame portion is such that the other main surface of the first frame portion and the heat sink Less than or equal to the distance from the first surface,
A semiconductor device, wherein a temperature sensing element for detecting temperature is integrated in the control integrated circuit. 電力半導体素子と、
前記電力半導体素子を制御するための制御用集積回路と、
前記電力半導体素子が一方主面に搭載される第１フレーム部、前記制御用集積回路が一方主面に搭載される第２フレーム部、前記第１フレーム部に接続される第１リード端子および前記第２フレーム部に接続される第２リード端子を有し、一枚板状からなるリードフレーム部と、
前記電力半導体素子および前記制御用集積回路を含む前記リードフレーム部を封止するモールド樹脂と、
前記第１フレーム部の一方主面と反対側の他方主面と対向して配置される放熱板と、
を備え、
前記第１フレーム部は、前記第１リード端子とリード段差部を介して支持され、前記第２フレーム部と略平行かつ、前記第２フレーム部よりも前記モールド樹脂の外面に接近するように配置され、
前記放熱板は、前記第１フレーム部と対向する第１面と反対側の第２面を有し、前記第２面の少なくとも一部が前記モールド樹脂の外部に露出するとともに、少なくとも一部が前記第２フレーム部側に延伸している延伸部を有し、
前記延伸部上に温度センサをさらに設け、
前記温度センサは、検知した温度に応じた電気信号を前記制御用集積回路に出力することを特徴とする半導体装置。 A power semiconductor element;
A control integrated circuit for controlling the power semiconductor element;
A first frame portion on which the power semiconductor element is mounted on one main surface; a second frame portion on which the control integrated circuit is mounted on one main surface; a first lead terminal connected to the first frame portion; a lead frame portion have a second lead terminal connected to the second frame part, consisting of a single plate-like,
A mold resin for sealing the lead frame portion including the power semiconductor element and the control integrated circuit;
A heat dissipating plate disposed to face the other main surface opposite to the one main surface of the first frame part;
With
The first frame part is supported via the first lead terminal and the lead step part, and is disposed so as to be substantially parallel to the second frame part and closer to the outer surface of the mold resin than the second frame part. And
The heat sink has a second surface opposite to the first surface facing the first frame portion, and at least a part of the second surface is exposed to the outside of the mold resin, and at least a part of the second surface is exposed. An extending portion extending toward the second frame portion;
A temperature sensor is further provided on the extending portion,
The temperature sensor outputs an electrical signal corresponding to the detected temperature to the control integrated circuit. 前記延伸部の厚みは、前記放熱板の外部に露出している面から前記第１フレーム部の前記電力半導体素子が搭載されている面までの距離と略同一であることを特徴とする請求項２に記載の半導体装置。 The thickness of the extending portion is substantially the same as a distance from a surface exposed to the outside of the heat radiating plate to a surface on which the power semiconductor element of the first frame portion is mounted. 2. The semiconductor device according to 2. 前記延伸部の厚みは、前記放熱板の外部に露出している面から前記第２フレーム部の前記制御用集積回路が搭載されている面までの距離と略同一であることを特徴とする請求項２に記載の半導体装置。 The thickness of the extending portion is substantially the same as the distance from the surface exposed to the outside of the heat sink to the surface on which the control integrated circuit of the second frame portion is mounted. Item 3. The semiconductor device according to Item 2.
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