JP5056333B2 - Plating substrate with lead-free plating layer - Google Patents

Plating substrate with lead-free plating layer Download PDF

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JP5056333B2
JP5056333B2 JP2007267940A JP2007267940A JP5056333B2 JP 5056333 B2 JP5056333 B2 JP 5056333B2 JP 2007267940 A JP2007267940 A JP 2007267940A JP 2007267940 A JP2007267940 A JP 2007267940A JP 5056333 B2 JP5056333 B2 JP 5056333B2
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JP2009097030A (en
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靖文 柴田
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Toyota Motor Corp
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C233/00Carboxylic acid amides
    • C07C233/01Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C233/16Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by singly-bound oxygen atoms
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    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C45/00Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds
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    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C45/00Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds
    • C07C45/51Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds by pyrolysis, rearrangement or decomposition
    • C07C45/54Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds by pyrolysis, rearrangement or decomposition of compounds containing doubly bound oxygen atoms, e.g. esters

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  • Chemical & Material Sciences (AREA)
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Description

本発明は、鉛フリーめっき層を有するめっき基材に関する。   The present invention relates to a plating substrate having a lead-free plating layer.

半導体装置のような電子部品において、外部端子の母材には銅、銅合金、42アロイなどが用いられるが、素地のままでは端子表面が酸化してはんだ付け不良等による導通不良を引き起こす恐れがある。そのために、通常、めっき等により端子表面に保護膜(めっき層)を形成して酸化を防いでいる。   In an electronic component such as a semiconductor device, copper, a copper alloy, 42 alloy, or the like is used as a base material for an external terminal. However, if the substrate is left as it is, the terminal surface may be oxidized to cause poor conduction due to poor soldering or the like. is there. For this purpose, a protective film (plating layer) is usually formed on the terminal surface by plating or the like to prevent oxidation.

めっき層の材料としてSn合金を用いる場合、従来から鉛(Pb)を含む合金が用いられてきた。近年、環境負荷を軽減する観点から鉛フリー化が求められるようになり、前記端子のめっき層材料にも、例えば、純SnあるいはSn−Cu、Sn−Bi、Sn−AgのようなSn合金のように、鉛を含まない材料が使用されるようになっている。しかし、鉛フリーの材料で電子部品の端子表面をめっき処理すると、めっき層から長さが数百μm以上のSnウィスカが発生する。   When using an Sn alloy as a material for the plating layer, an alloy containing lead (Pb) has been used conventionally. In recent years, there has been a demand for lead-free from the viewpoint of reducing the environmental burden, and the plating layer material of the terminal is made of, for example, pure Sn or Sn alloy such as Sn—Cu, Sn—Bi, Sn—Ag. As such, materials that do not contain lead are used. However, when the surface of the terminal of the electronic component is plated with a lead-free material, Sn whisker having a length of several hundred μm or more is generated from the plating layer.

近年、例えばICチップをリードフレームに搭載した半導体装置のような電子部品は一層の小型化が求められており、結果として、その端子間の間隔は数百μm程度まで狭くなってきている。前記ウィスカは数百μmの長さにまで成長することがあり、前記のように端子間の間隔が数百μm程度と狭い場合には、発生した針状ウィスカにより端子間ショートが発生する恐れがある。そのために、針状ウィスカの発生を抑制するための対策が求められている。   In recent years, for example, electronic components such as a semiconductor device in which an IC chip is mounted on a lead frame have been required to be further reduced in size, and as a result, the distance between the terminals has been reduced to about several hundred μm. The whisker may grow to a length of several hundred μm, and if the distance between the terminals is as narrow as several hundred μm as described above, there is a possibility that a short circuit between the terminals may occur due to the generated needle whisker. is there. Therefore, measures for suppressing the occurrence of acicular whiskers are required.

ウィスカの発生および成長のメカニズムは完全には解明されていないが、めっき層の内部応力増加が一因であるとの考えられており、内部応力増加の原因として、使用環境での熱ストレスや水蒸気などによるメッキ粒子の組織や構造の変化、リードフレームの加工時の残留応力、めっき時の残留応力、リードフレームとめっき層との線膨張係数差などが挙げられている。そのような観点から、特許文献1には、絶縁性のベース部材とこのベース部材上に形成された導体層とを有して構成された基板と、この導体層上に形成されたPbフリー半田層とを備えた導電接続部材において、Pbフリー半田層に外部から荷重が加えられた時に発生する内部応力を吸収すべく、ベース部材の表面が凹凸を有するように構成された導電接続部材が記載されている。   Although the mechanism of whisker generation and growth has not been fully elucidated, it is thought that the increase in internal stress of the plating layer is one of the causes. Examples include changes in the structure and structure of plating particles due to the above, residual stress during processing of the lead frame, residual stress during plating, and a difference in coefficient of linear expansion between the lead frame and the plating layer. From such a point of view, Patent Document 1 discloses a substrate having an insulating base member and a conductor layer formed on the base member, and a Pb-free solder formed on the conductor layer. In the conductive connection member provided with a layer, the conductive connection member is configured such that the surface of the base member has irregularities so as to absorb internal stress generated when a load is applied to the Pb-free solder layer from the outside. Has been.

また、特許文献2には、金属の素地と該素地上に形成された錫または錫合金の電気めっき膜とを有する電子部品の端子において、素地の表面および電気めっき膜の表面のそれぞれを、無方向性の凹凸形状を有しRz値が0.5〜5μmの範囲内の略同じ値の粗面として形成することにより、ウィスカの発生が抑制されたことが記載されている。
特開2005−353948号公報 特開2006−124788号公報
Further, in Patent Document 2, in the terminal of an electronic component having a metal base and a tin or tin alloy electroplating film formed on the base, the surface of the base and the surface of the electroplating film are not provided. It is described that whisker generation is suppressed by forming a rough surface having a directional uneven shape and having an Rz value of approximately the same value within a range of 0.5 to 5 μm.
JP 2005-353948 A JP 2006-124788 A

本発明者らは、鉛フリーめっき層でのウィスカの発生について多くの実験と研究を継続して行ってきているが、母材表面に凹凸を形成するあるいは粗面とすることによって鉛フリーめっき層(あるいははんだ層)でのウィスカの発生を抑制する従来技術は、いずれも充分な成果を上げているとはいえないことを経験した。   The present inventors have continued many experiments and research on the generation of whiskers in the lead-free plating layer, but the lead-free plating layer is formed by forming irregularities on the surface of the base material or making it rough. It has been experienced that none of the conventional techniques for suppressing the generation of whiskers in the solder layer (or solder layer) has achieved satisfactory results.

本発明は、上記の事情を考慮してなされたものであり、鉛フリーめっき層を有するめっき基材において、基本的に内部応力緩和の手法を用いながら、より完全にウィスカの発生を抑制できる鉛フリーめっき層を有するめっき基材を提供することを課題とする。   The present invention has been made in consideration of the above circumstances, and in a plating base material having a lead-free plating layer, lead that can more completely suppress the occurrence of whiskers while basically using a technique for relaxing internal stress. It is an object to provide a plating base material having a free plating layer.

本発明者らは、鉛フリーめっき層でのウィスカの発生についてさらに多くの実験と研究を行うことにより、従来の方法は、母材を加工するときに生じた母材側の残留応力、あるいは実機として使用時に被る温度履歴等によって生じる母材側の残留応力に対する緩和(低減)対策が充分でなく、そのために、母材側の残留応力が母材表面に形成した鉛フリーめっき層に影響を与え、ウィスカを発生させる一因となっていることを知見した。   By conducting more experiments and research on the generation of whiskers in the lead-free plating layer, the present inventors have found that the conventional method has the residual stress on the base material side generated when processing the base material, or the actual machine. As a result, there is not enough mitigation (reduction) measures against the residual stress on the base metal side caused by the temperature history, etc. that is incurred during use. It was found that this was one of the causes of whiskers.

本発明は、上記の知見に基づくものであり、本発明による母材の表面に鉛フリーめっき層を有するめっき基材は、母材表面に50μm以上の深さである複数の凹所が形成されていることを特徴とする。50μm未満の深さの凹所は、残留応力低減効果が不十分であり、結果として充分なウィスカ発生抑制効果が得られない。なお、50μm以上の深さである凹所には母材を貫通する貫通孔も含まれる。   The present invention is based on the above knowledge, and the plating base material having the lead-free plating layer on the surface of the base material according to the present invention has a plurality of recesses having a depth of 50 μm or more on the surface of the base material. It is characterized by. A recess having a depth of less than 50 μm has an insufficient residual stress reducing effect, and as a result, a sufficient whisker generation suppressing effect cannot be obtained. The recess having a depth of 50 μm or more includes a through hole penetrating the base material.

本発明による鉛フリーめっき層を有するめっき基材において、好ましくは、前記凹所の直径は0.5μm〜10μmの範囲であり、また好ましくは、前記母材のめっき層形成部の総面積に対する前記複数の凹所が占める割合は10%〜20%の範囲である。なお、直径が0.5μm未満の凹所は加工が困難であると共に、充分な残留応力の低減効果が得られない。直径が10μmを越える大きさの凹所は残留応力低減効果は得られるが、均一なめっき層の形成に影響を与えるので好ましくない。また、母材のめっき層形成部の総面積に対する複数の凹所が占める割合が10%未満の場合には、充分な残留応力の低減効果が得られずウィスカが発生しやすく、また、20%を越える場合には、母材の強度低下を引き起こす恐れがあるので、好ましくない。   In the plating base material having a lead-free plating layer according to the present invention, preferably, the diameter of the recess is in the range of 0.5 μm to 10 μm, and preferably, the total area of the plating layer forming portion of the base material is The ratio occupied by the plurality of recesses is in the range of 10% to 20%. Note that a recess having a diameter of less than 0.5 μm is difficult to process, and a sufficient residual stress reduction effect cannot be obtained. A recess having a diameter exceeding 10 μm can reduce the residual stress, but is not preferable because it affects the formation of a uniform plating layer. Further, when the ratio of the plurality of recesses to the total area of the plating layer forming portion of the base material is less than 10%, a sufficient residual stress reduction effect cannot be obtained, and whiskers are easily generated, and 20% In the case where it exceeds 1, the strength of the base material may be lowered, which is not preferable.

本発明による鉛フリーめっき層を有するめっき基材において、好ましくは、母材はCu、Cu合金または42アロイであり、中でも、42アロイは特に好ましい。鉛フリーめっき層は、純SnあるいはSn−Cu,Sn−Bi,Sn−AgのようなSn合金によるめっき層を例示できる。   In the plating base material having the lead-free plating layer according to the present invention, preferably, the base material is Cu, Cu alloy or 42 alloy, and 42 alloy is particularly preferable. The lead-free plating layer can be exemplified by a plating layer of pure Sn or Sn alloy such as Sn—Cu, Sn—Bi, Sn—Ag.

後の実施例に示すように、本発明による鉛フリーめっき層を有するめっき基材では、母材表面に限定された数値範囲の凹凸を形成したことより、母材側の残留応力を確実に低減することができ、結果として、鉛フリーめっき層にウィスカが発生するのを確実に抑制することができる。また、その際に、実機として使用するのに不十分となるほどに、めっき基材(母材)の強度を低下させることもない。各請求項で規定する数値範囲を外れた凹所を形成する場合には、母材側の残留応力低減効果が不十分となり、それが影響してめっき層にウィスカの発生を抑制できないか、あるいは、めっき基材の強度低下が大きくなって実機としての使用に耐えなくなる。   As shown in the following examples, in the plating base material having the lead-free plating layer according to the present invention, the residual stress on the base material side is reliably reduced by forming unevenness in a numerical range limited to the base material surface. As a result, it is possible to reliably suppress the occurrence of whiskers in the lead-free plating layer. In this case, the strength of the plating base material (base material) is not lowered to such an extent that it is insufficient for use as an actual machine. When forming a recess outside the numerical range specified in each claim, the effect of reducing the residual stress on the base metal side becomes insufficient, and it is not possible to suppress the occurrence of whiskers on the plating layer, or As a result, the strength of the plating base material is greatly reduced and it cannot be used as an actual machine.

さらに、後の実施例に示すように、本発明による鉛フリーめっき層を有するめっき基材に対して、低温側−40℃に30分間放置⇔高温側80℃に30分間放置を1サイクルとする冷熱サイクルを2000回繰り返す冷熱サイクル履歴を与えても、ウィスカの発生は見られなかった。この冷熱サイクルの温度帯域は、自動車に実装される電子部品が経験する範囲のものであり、従って、本発明による鉛フリーめっき層を有するめっき基材は、車載用の電子部品におけるめっき基材として、特に好適に用いることができる。   Furthermore, as shown in the following examples, the plating substrate having the lead-free plating layer according to the present invention is allowed to stand for 30 minutes on the low temperature side −40 ° C. and left for 30 minutes on the high temperature side 80 ° C. for one cycle. Whisker generation was not observed even when a cooling cycle history was repeated 2000 times. The temperature range of this thermal cycle is in the range experienced by electronic components mounted on automobiles. Therefore, the plating base material having a lead-free plating layer according to the present invention is used as a plating base material for in-vehicle electronic components. Can be used particularly preferably.

本発明によれば、母材の表面に鉛フリーめっき層を有するめっき基材において、母材側に生じる残留応力の影響を排除することができ、鉛フリーめっき層にウィスカが発生するのを確実に抑制することができる。   According to the present invention, in the plating base material having the lead-free plating layer on the surface of the base material, the influence of the residual stress generated on the base material side can be eliminated, and it is ensured that whiskers are generated in the lead-free plating layer. Can be suppressed.

[実施例1]
図1に示すように、母材1に42アロイを用い、その一方の表面に、直径1μmの凹所2を複数個形成する穴加工を行った。母材1の寸法は、16mm×44mm×0.5mm(厚さ)である。凹所2の深さとして、10μm、50μm、100μm、貫通孔の4種類をものを用意し、各テストピースに、電解めっきにより平均厚さ7μm〜9μmとなるように、Snによる鉛フリーめっき層を形成してめっき基材とした。めっき層形成後に、低温側−40℃に30分間放置⇔高温側85℃に30分間放置を1サイクルとする冷熱サイクルを2000回繰り返す冷熱サイクルをめっき層に与えた。
[Example 1]
As shown in FIG. 1, 42 alloy was used for the base material 1, and drilling was performed to form a plurality of recesses 2 having a diameter of 1 μm on one surface thereof. The size of the base material 1 is 16 mm × 44 mm × 0.5 mm (thickness). 4 types of depths of the recess 2 of 10 μm, 50 μm, 100 μm, and through-holes are prepared, and a lead-free plating layer made of Sn so that each test piece has an average thickness of 7 μm to 9 μm by electrolytic plating To form a plating substrate. After the plating layer was formed, the plating layer was subjected to a cooling cycle in which a cooling cycle was performed 2000 times, which was left for 30 minutes on the low temperature side −40 ° C. and left for 30 minutes on the high temperature side 85 ° C.

冷熱サイクル履歴後の各めっき基材における母材側の残留応力(MPa)を測定した。その結果を図2に示した。なお、残留応力はsinψ法で測定した。また、電子顕微鏡(SEM)を用いて、冷熱サイクル履歴後のめっき層でのウィスカの発生状態を観察した。その結果を表1に示した。
[比較例1]
実施例1と同じ寸法の母材1の表面に、穴加工を行うことなく、実施例1と同様にSnによる鉛フリーめっき層を形成してめっき基材を作った。それに対して、実施例1と同じ冷熱サイクルを与え、冷熱サイクル履歴後のめっき基材おける母材1側の残留応力(MPa)を測定した。その結果を図2に凹所の深さ0として示した。また、実施例1と同じようにしてめっき層でのウィスカの発生状態を観察した。その結果を表1に凹所の深さ0として示した。
The residual stress (MPa) on the base material side of each plating base material after the cooling cycle history was measured. The results are shown in FIG. Residual stress was measured by the sin 2 ψ method. Moreover, the generation | occurrence | production state of the whisker in the plating layer after a thermal cycle history was observed using the electron microscope (SEM). The results are shown in Table 1.
[Comparative Example 1]
A lead-free plating layer made of Sn was formed on the surface of the base material 1 having the same dimensions as in Example 1 without drilling to form a plating base material. On the other hand, the same thermal cycle as Example 1 was given, and the residual stress (MPa) on the base material 1 side in the plating base material after the thermal cycle history was measured. The result is shown in FIG. Further, the whisker generation state in the plating layer was observed in the same manner as in Example 1. The results are shown in Table 1 with the depth of the recess being 0.

Figure 0005056333
Figure 0005056333

[実施例2]
実施例1と同じ複数個の母材1をテストピーストし、その一方の表面に、直径1μm、深さ50μmの凹所2を複数個形成する穴加工を行った。但し、母材1の一方の表面積に対する凹所2が占める割合(加工面積)が、10%、20%、30%の3種類をものを用意し、各テストピースに、実施例1と同じSnによる鉛フリーめっき層を形成してめっき基材とした。めっき層形成後に、実施例1と同じ冷熱サイクルを実施した。
[Example 2]
A plurality of base materials 1 identical to those in Example 1 were test pieced, and a hole was formed on one surface thereof to form a plurality of recesses 2 having a diameter of 1 μm and a depth of 50 μm. However, the ratio (working area) occupied by the recess 2 with respect to one surface area of the base material 1 is three types of 10%, 20%, and 30%, and the same Sn as in Example 1 is prepared for each test piece. A lead-free plating layer was formed as a plating substrate. After the plating layer was formed, the same cooling cycle as in Example 1 was performed.

冷熱サイクル履歴後の各めっき基材に対し、その強度として、引張試験による破断強度を測定したを測定した。それぞれの強度を、後記する比較例2のめっき部材(すなわち、穴加工を行わないめっき部材)の強度を100として、その割合を比較した。それを図3に強度保持率として示した。また、実施例1と同様にして、冷熱サイクル履歴後のめっき層におけるウィスカの発生状態を観察した。その結果を表2に示した。
[比較例2]
実施例2と同じ寸法の母材表面に、穴加工を行うことなく、実施例2と同様にSnによる鉛フリーめっき層を形成してめっき基材を作った。それに対して、実施例1と同じ冷熱サイクルを与え、冷熱サイクル履歴後のめっき基材おける強度として、引張試験による破断強度を測定したを測定した。その結果を図3に加工面積0%として示した。また、同じようにしてめっき層でのウィスカの発生状態を観察した。その結果を表2に加工面積0%として示した。
As the strength of each plating base material after the cooling cycle history, the breaking strength measured by a tensile test was measured. The strength of each plated member of Comparative Example 2 (that is, a plated member that is not subjected to drilling), which will be described later, was set to 100, and the respective strengths were compared. This is shown as strength retention in FIG. Further, in the same manner as in Example 1, the state of whisker generation in the plated layer after the cooling cycle history was observed. The results are shown in Table 2.
[Comparative Example 2]
A lead-free plating layer made of Sn was formed on the surface of the base material having the same dimensions as in Example 2 without drilling in the same manner as in Example 2 to produce a plating substrate. On the other hand, the same cooling cycle as in Example 1 was applied, and the strength at break by a tensile test was measured as the strength of the plating base material after the history of the cooling cycle. The results are shown in FIG. 3 with a processed area of 0%. Moreover, the generation | occurrence | production state of the whisker in a plating layer was observed similarly. The results are shown in Table 2 as a processed area of 0%.

Figure 0005056333
Figure 0005056333

[考察]
図2に示すように、凹所の深さが50μm以上となると、残留応力が大きく低減しており、結果として表1に示すように、めっき層でのウィスカの発生は抑制されている。しかし、図3に示すように、凹所の加工面積の割合が30%程度となると、ウィスカの発生は抑制できても、母材の強度保持率が80%以下となり、めっき部材の実機としての強度不足が生じる場合があることがわかる。
[Discussion]
As shown in FIG. 2, when the depth of the recess is 50 μm or more, the residual stress is greatly reduced. As a result, as shown in Table 1, the occurrence of whiskers in the plating layer is suppressed. However, as shown in FIG. 3, when the ratio of the processing area of the recess is about 30%, even if whisker generation can be suppressed, the strength retention rate of the base material becomes 80% or less, It can be seen that insufficient strength may occur.

実施例で用いた母材に穴加工を施した状態を説明する図。The figure explaining the state which bored the base material used in the Example. 実施例1での凹所深さと母材の残留応力との関係を示すグラフ。6 is a graph showing the relationship between the depth of the recess and the residual stress of the base material in Example 1. 実施例2での凹所加工面積と強度保持率との関係を示すグラフ。The graph which shows the relationship between the recess processing area in Example 2, and an intensity | strength retention rate.

符号の説明Explanation of symbols

1…母材(基材)、2…母材表面に形成する凹所 DESCRIPTION OF SYMBOLS 1 ... Base material (base material), 2 ... Recess formed in base material surface

Claims (3)

Cu、Cu合金または42アロイである母材の表面に鉛フリーの純SnあるいはSn合金によるめっき層を有するめっき基材であって、母材表面に50μm以上の深さであり直径が0.5μm〜10μmの範囲である複数の円形の凹所が形成されていることを特徴とする鉛フリーめっき層を有するめっき基材。 A plating base material having a plating layer of lead-free pure Sn or Sn alloy on the surface of a base material made of Cu, Cu alloy or 42 alloy, having a depth of 50 μm or more and a diameter of 0.5 μm on the surface of the base material A plating substrate having a lead-free plating layer, wherein a plurality of circular recesses in the range of 10 μm to 10 μm are formed. 前記母材のめっき層形成部の総面積に対する前記複数の凹所が占める割合が10%〜20%の範囲であることを特徴とする請求項1に記載の鉛フリーめっき層を有するめっき基材。   2. The plating base material having a lead-free plating layer according to claim 1, wherein a ratio of the plurality of recesses to a total area of the plating layer forming portion of the base material is in a range of 10% to 20%. . 前記鉛フリーめっき層を有するめっき基材が車載用の電子部品におけるめっき基材であることを特徴とする請求項1または2に記載の鉛フリーめっき層を有するめっき基材。 The plating base material having a lead-free plating layer according to claim 1 or 2 , wherein the plating base material having the lead-free plating layer is a plating base material in an in-vehicle electronic component.
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