JP5052824B2 - DC coaxial cable connection for power - Google Patents

DC coaxial cable connection for power Download PDF

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JP5052824B2
JP5052824B2 JP2006154125A JP2006154125A JP5052824B2 JP 5052824 B2 JP5052824 B2 JP 5052824B2 JP 2006154125 A JP2006154125 A JP 2006154125A JP 2006154125 A JP2006154125 A JP 2006154125A JP 5052824 B2 JP5052824 B2 JP 5052824B2
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return
layer
return conductor
cable
conductor
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JP2007325442A (en
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健彦 水野
真一 川上
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Electric Power Development Co Ltd
Fujikura Ltd
Viscas Corp
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Electric Power Development Co Ltd
Fujikura Ltd
Viscas Corp
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Priority to JP2006154125A priority Critical patent/JP5052824B2/en
Application filed by Electric Power Development Co Ltd, Fujikura Ltd, Viscas Corp filed Critical Electric Power Development Co Ltd
Priority to CN2011100520144A priority patent/CN102255213B/en
Priority to CN2011100520356A priority patent/CN102170054B/en
Priority to CN2007800050583A priority patent/CN101385211B/en
Priority to CN2011100520125A priority patent/CN102170053B/en
Priority to EP16173784.6A priority patent/EP3096427B1/en
Priority to PCT/JP2007/060839 priority patent/WO2007142069A1/en
Priority to EP07744273.9A priority patent/EP2026439B1/en
Publication of JP2007325442A publication Critical patent/JP2007325442A/en
Priority to NO20081510A priority patent/NO344663B1/en
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Description

本発明は、中心の主導体と同軸状に帰路導体を有する電力用直流同軸ケーブルの接続部に関するものである。   The present invention relates to a connecting portion of a power DC coaxial cable having a return conductor coaxially with a central main conductor.

図3に電力用直流同軸ケーブルの一例を示す。この直流同軸ケーブルは、中心に主導体1を有し、その外側に、内部半導電層2、主絶縁層3、外部半導電層4、帰路導体5、帰路内部半導電層6、帰路絶縁層7、帰路外部半導電層8、鉛被9、防食層10を、順次同軸状に設けたものである(特許文献1の図1参照)。   FIG. 3 shows an example of a direct current coaxial cable for electric power. This DC coaxial cable has a main conductor 1 in the center, and an outer side of the inner semiconductive layer 2, a main insulating layer 3, an outer semiconductive layer 4, a return conductor 5, a return inner semiconductive layer 6, and a return insulating layer. 7, a return external semiconductive layer 8, a lead coating 9, and an anticorrosion layer 10 are sequentially provided coaxially (see FIG. 1 of Patent Document 1).

帰路導体5は、外部半導電層4の外周に多数の帰路導体素線(銅線)を同心撚りすることにより形成される。帰路導体素線の撚り方には、撚り方向が変わらない一方向撚り(らせん巻き)と、一定のピッチで撚り方向が反転するSZ撚り(特許文献1の図2参照)とがある。   The return conductor 5 is formed by concentrically twisting a large number of return conductor strands (copper wires) around the outer periphery of the outer semiconductive layer 4. There are two ways of twisting the return conductor wire: one-direction twist (spiral winding) in which the twist direction does not change, and SZ twist (see FIG. 2 of Patent Document 1) in which the twist direction is reversed at a constant pitch.

このような直流同軸ケーブル同士を接続する場合、ケーブル接続部において帰路導体も接続する必要がある。従来、帰路導体を接続する方法としては、帰路導体素線を1本ずつ突き合わせ溶接する方法が知られている(特許文献1参照)。   When connecting such DC coaxial cables, it is also necessary to connect a return conductor at the cable connecting portion. Conventionally, as a method of connecting return conductors, a method of butt welding the return conductor strands one by one is known (see Patent Document 1).

特開平11−111071号公報JP 11-1111071 A

直流同軸ケーブルの帰路導体は、隣り合う帰路導体素線を互いに接触させて同心撚りすることにより形成されているが、直流同軸ケーブルの接続部では、ケーブルの主絶縁層の外径よりも接続部の補強主絶縁体の外径の方が大きくなるため、接続部の補強主絶縁体の外側に位置する帰路導体は、ケーブル部の帰路導体と比べて隣り合う帰路導体素線の間隔が広がってしまうことになる。   The return conductor of a DC coaxial cable is formed by bringing adjacent return conductor wires into contact with each other and twisting them concentrically. Because the outer diameter of the reinforcing main insulator is larger, the return conductor located outside the reinforcing main insulator of the connecting portion has a larger spacing between adjacent return conductor wires than the return conductor of the cable section. Will end up.

帰路導体素線間の間隔が大きくなると、電磁遮蔽特性が十分でなくなるという問題がある。また帰路導体素線間に隙間ができると、隣り合う帰路導体素線同士を介した電流の流れが殆どないと考えられるため、ケーブル接続部で各帰路導体素線を流れる電流値に不均衡が生じた場合、一部の帰路導体素線に電流が集中し、異常発熱が発生するおそれもある。   When the distance between the return conductor wires increases, there is a problem that the electromagnetic shielding characteristics are not sufficient. In addition, if there is a gap between the return conductor strands, it is considered that there is almost no current flow through the adjacent return conductor strands, so there is an imbalance in the current value flowing through each return conductor strand at the cable connection. When this occurs, current concentrates on some return conductor strands, and abnormal heat generation may occur.

本発明の目的は、電力用直流同軸ケーブルの接続部における、電磁遮蔽特性の低下を防止すると共に、帰路導体の異常発熱を防止することにある。   An object of the present invention is to prevent a decrease in electromagnetic shielding characteristics at a connection portion of a power direct-current coaxial cable and to prevent abnormal heat generation of a return conductor.

この目的を達成するため本発明は、中心に主導体を有し、その外側に内部半導電層、主絶縁層、外部半導電層を有し、その外側に多数の帰路導体素線を同心撚りしてなる帰路導体を有する電力用直流同軸ケーブルの接続部において、接続部に位置する帰路導体の素線間の隙間がケーブル部に比べて広がっている部分の直下又は直上に、全周にわたって且つケーブル長さ方向に連続して、帰路導体素線と接触する金属層を設けたことを特徴とするものである。 In order to achieve this object, the present invention has a main conductor at the center, an inner semiconductive layer, a main insulating layer, and an outer semiconductive layer on the outer side, and a number of return conductor wires are concentrically twisted on the outer side. In the connecting portion of the power direct-current coaxial cable having the return conductor, the gap between the return conductor wires located in the connecting portion extends directly below or immediately above the portion where the gap extends compared to the cable portion, and over the entire circumference. A metal layer that is in contact with the return conductor strand is provided continuously in the cable length direction.

本発明によれば、直流同軸ケーブル接続部の帰路導体の直下又は直上に金属層を設けたことにより、帰路導体素線間の隙間が広がっても金属層によって電磁遮蔽特性の低下を補完することができる。また上記金属層が各帰路導体素線と電気的に接触して電流路となるため帰路導体素線毎の電流分布が均一化されると共に、帰路導体抵抗が低下するので、直流同軸ケーブル接続部での帰路導体の発熱を抑制でき、温度上昇を抑えることができる。 According to the present invention, by providing a metal layer directly below or immediately above the return conductor of the DC coaxial cable connection portion, even if a gap between return conductor strands widens, the metal layer compensates for a decrease in electromagnetic shielding characteristics. Can do. Also with the above metal layer each return path conductor wire in electrical contact with the current distribution of each return conductor element wire for the collector passage is made uniform, because the return conductor resistance decreases, DC coaxial cable Heat generation of the return conductor at the connecting portion can be suppressed, and an increase in temperature can be suppressed.

図1は本発明に係る電力用直流同軸ケーブル接続部の一実施形態を示す。接続すべき直流同軸ケーブルA、Bはそれぞれ、防食層10、鉛被9、帰路絶縁層7(その内外の半導電層は図示省略)、外部半導電層4、主絶縁層3、内部半導電層(図示省略)を順次段剥ぎして先端に主導体1を露出させ、主導体1同士を溶接接続してある。21は主導体1の溶接接続部である。22は溶接接続部21とその両側のケーブルの内部半導電層(図示省略)に跨るように形成された接続部の内部半導電層、23は内部半導電層22とその両側の主絶縁層3、3に跨るように形成された補強主絶縁体、24は補強主絶縁体23とその両側のケーブルの外部半導電層4に跨るように形成された接続部の外部半導電層である。補強主絶縁体23の外径はケーブルの主絶縁層3の外径よりも大きくなる。このため接続部の外部半導電層24の外径もケーブルの外部半導電層4の外径よりも大きくなる。   FIG. 1 shows an embodiment of a power DC coaxial cable connecting portion according to the present invention. The DC coaxial cables A and B to be connected are the anticorrosion layer 10, the lead sheath 9, the return insulating layer 7 (the inner and outer semiconductive layers are not shown), the outer semiconductive layer 4, the main insulating layer 3, and the inner semiconductive. The layers (not shown) are sequentially stripped to expose the main conductor 1 at the tip, and the main conductors 1 are welded together. Reference numeral 21 denotes a weld connection portion of the main conductor 1. 22 is an internal semiconductive layer of a connecting portion formed so as to straddle a welded connecting portion 21 and internal semiconductive layers (not shown) of cables on both sides thereof, and 23 is an internal semiconductive layer 22 and a main insulating layer 3 on both sides thereof. 3 is a reinforcing main insulator formed so as to straddle 3, and 24 is an external semiconducting layer of a connecting portion formed so as to straddle the reinforcing semi-insulator 23 and the external semiconducting layers 4 of the cables on both sides thereof. The outer diameter of the reinforcing main insulator 23 is larger than the outer diameter of the main insulating layer 3 of the cable. For this reason, the outer diameter of the outer semiconductive layer 24 of the connecting portion is also larger than the outer diameter of the outer semiconductive layer 4 of the cable.

接続部の外部半導電層24を形成するまでの接続作業は従来と同じである。この実施形態では、一方のケーブルAの外部半導電層4を露出させた領域Pで帰路導体5の溶接接続を行うこととし、その領域Pに熱的緩衝層25を設ける。熱的緩衝層25は、ケーブルAの外部半導電層4から接続部の外部半導電層24にかけて半導電性クッションテープを外径が一様になるように巻き上げることにより形成することが好ましい。通常、ケーブルの主絶縁層と、接続部の補強主絶縁体との外径差は6〜40mm程度であるため、半導電性クッションテープ巻きによる熱的緩衝層の厚さは3〜20mm程度となる。帰路導体溶接時の熱による熱的損傷を防止するのに必要な半導電性クッションテープの巻き厚は3mm以上であり、この半導電性クッションテープの巻き厚は、帰路導体溶接作業時におけるケーブルの外部半導電層及び主絶縁層の外傷防止にも十分な厚さである。   The connection work up to the formation of the external semiconductive layer 24 of the connection portion is the same as the conventional one. In this embodiment, the return conductor 5 is welded in the region P where the external semiconductive layer 4 of one cable A is exposed, and the thermal buffer layer 25 is provided in the region P. The thermal buffer layer 25 is preferably formed by winding the semiconductive cushion tape from the outer semiconductive layer 4 of the cable A to the outer semiconductive layer 24 of the connection portion so that the outer diameter is uniform. Usually, since the difference in outer diameter between the main insulation layer of the cable and the reinforcing main insulation of the connection portion is about 6 to 40 mm, the thickness of the thermal buffer layer by the semiconductive cushion tape winding is about 3 to 20 mm. Become. The winding thickness of the semiconductive cushion tape necessary to prevent thermal damage due to heat during return conductor welding is 3 mm or more. The winding thickness of this semiconductive cushion tape is the same as that of the cable during the return conductor welding operation. The thickness is sufficient to prevent damage to the outer semiconductive layer and the main insulating layer.

上記のように熱的緩衝層25を形成した後、当該熱的緩衝層25、接続部の外部半導電層24及びケーブルA、Bの外部半導電層24上にかけて金属層26を設ける。金属層26は銅メッシュテープを巻きつけることにより形成することが好ましいが、鉛テープ、銅テープ又はアルミテープ等の金属テープを巻きつけることによって形成してもよい。   After forming the thermal buffer layer 25 as described above, the metal layer 26 is provided on the thermal buffer layer 25, the external semiconductive layer 24 of the connection portion, and the external semiconductive layer 24 of the cables A and B. The metal layer 26 is preferably formed by winding a copper mesh tape, but may be formed by winding a metal tape such as a lead tape, a copper tape or an aluminum tape.

金属層26を設けた後、前記熱的緩衝層25を設けた領域Pの金属層26上で、両ケーブルの帰路導体5の溶接接続を行う。27は帰路導体5の溶接接続部である。ケーブルAの外部半導電層4上には熱的緩衝層25が設けられているため、帰路導体5を溶接する際の熱で、当該外部半導電層4及び主絶縁層3並びに接続部の外部半導電層24及び補強主絶縁体23が熱的損傷を受けるおそれがない。   After the metal layer 26 is provided, the return conductors 5 of both cables are welded and connected on the metal layer 26 in the region P where the thermal buffer layer 25 is provided. Reference numeral 27 denotes a welding connection portion of the return conductor 5. Since the thermal buffer layer 25 is provided on the external semiconductive layer 4 of the cable A, the external semiconductive layer 4, the main insulating layer 3, and the outside of the connection portion are heated by heat when welding the return conductor 5. There is no possibility that the semiconductive layer 24 and the reinforcing main insulator 23 are thermally damaged.

帰路導体5を溶接接続する場合には、帰路導体素線を1本ずつ溶接してもよいが、帰路導体素線を複数本ずつの束にして、素線束同士を溶接接続してもよい。素線束同士で溶接した方が、溶接回数が少なくて済み、溶接作業を効率よく行うことができる。例えば、主導体断面積400mm、帰路導体素線φ2.6mm×55本撚りの直流同軸ケーブル同士を接続する場合には、帰路導体素線を5本ずつの束にして突き合わせ溶接すれば、溶接回数は11回で済むことになる。 When the return conductor 5 is connected by welding, the return conductor strands may be welded one by one, or a plurality of return conductor strands may be bundled and the strand bundles may be welded together. If the wire bundles are welded together, the number of times of welding can be reduced, and the welding work can be performed efficiently. For example, when connecting DC coaxial cables with a main conductor cross-sectional area of 400 mm 2 and return conductor strands of φ2.6 mm x 55 strands, butt welding with a bundle of return conductor strands in groups of 5 The number of times is 11 times.

帰路導体5を溶接接続した後の接続作業は従来と同様である。すなわち、両ケーブルの帰路絶縁層7に跨るように補強帰路絶縁体28を形成し、鉛被29及び防食層30を設ければよい。なお、補強帰路絶縁体28の内側には、両ケーブルの帰路内部半導電層に跨るように接続部の帰路内部半導電層が設けられ、補強帰路絶縁体28の外側には、両ケーブルの帰路外部半導電層に跨るように接続部の帰路外部半導電層が設けられるが、図示を省略してある。   The connection work after the return conductor 5 is connected by welding is the same as in the prior art. That is, the reinforced return insulator 28 may be formed so as to straddle the return insulation layer 7 of both cables, and the lead coating 29 and the anticorrosion layer 30 may be provided. A return internal semiconductive layer of the connecting portion is provided inside the reinforced return insulator 28 so as to straddle the return internal semiconductive layers of both cables, and the return paths of both cables are provided outside the reinforced return insulator 28. A return external semiconductive layer of the connecting portion is provided so as to straddle the external semiconductive layer, but the illustration is omitted.

上記のように構成された直流同軸ケーブルの接続部では、補強主絶縁体23の外径がケーブルの主絶縁層3の外径よりも大きくなるため、補強主絶縁体23及び熱的緩衝層25の外側に位置する帰路導体5はケーブル部と比べて素線間の隙間が広がるが、帰路導体5の直下には金属層26が設けられているため、十分な電磁遮蔽特性を確保することができる。また上記金属層26を設けたことにより、ケーブル接続部における帰路導体素線毎の電流分布が均一化されると共に、帰路導体抵抗が低下するので、帰路導体の発熱を抑制でき、温度上昇を抑えることができる。   In the connecting portion of the DC coaxial cable configured as described above, the outer diameter of the reinforcing main insulator 23 is larger than the outer diameter of the main insulating layer 3 of the cable, so that the reinforcing main insulator 23 and the thermal buffer layer 25 are. The return conductor 5 located on the outer side of the cable has a larger gap between the strands than the cable portion. However, since the metal layer 26 is provided immediately below the return conductor 5, sufficient electromagnetic shielding characteristics can be ensured. it can. Further, since the metal layer 26 is provided, the current distribution for each return conductor in the cable connection portion is made uniform, and the return conductor resistance is lowered, so that the heat generation of the return conductor can be suppressed and the temperature rise is suppressed. be able to.

図2は本発明の他の実施形態を示す。この実施形態が図1の実施形態と異なる点は、金属層26を、帰路導体5の直下ではなく直上に設けたことである。それ以外の構成は図1の実施形態と同じであるので、同一部分には同一符号を付して説明を省略する。このような構成でも実施形態1と同様な効果を得ることができる。   FIG. 2 shows another embodiment of the present invention. This embodiment is different from the embodiment of FIG. 1 in that the metal layer 26 is provided directly above the return conductor 5 instead of immediately below. Since the other configuration is the same as that of the embodiment of FIG. Even with such a configuration, the same effect as in the first embodiment can be obtained.

本発明に係る電力用直流同軸ケーブル接続部の一実施形態示す縦断面図。The longitudinal cross-sectional view which shows one Embodiment of the direct-current coaxial cable connection part for electric power which concerns on this invention. 同じく他の実施形態を示す縦断面図。Similarly, the longitudinal cross-sectional view which shows other embodiment. 電力用直流同軸ケーブルの一例を示す横断面図。The cross-sectional view which shows an example of the direct current | flow coaxial cable for electric power.

符号の説明Explanation of symbols

1:ケーブルの主導体
2:ケーブルの内部半導電層
3:ケーブルの主絶縁層
4:ケーブルの外部半導電層
5:帰路導体
7:ケーブルの帰路絶縁層
21:主導体の溶接部
22:接続部の内部半導電層
23:接続部の補強主絶縁体
24:接続部の外部半導電層
25:熱的緩衝層
26:金属層
27:帰路導体の溶接部
1: Cable main conductor 2: Cable inner semiconductive layer 3: Cable main insulating layer 4: Cable outer semiconductive layer 5: Return conductor 7: Cable return insulating layer 21: Main conductor weld 22: Connection Inner semiconductive layer 23: Reinforcement main insulator 24: Connection outer semiconductive layer 25: Thermal buffer layer 26: Metal layer 27: Return conductor weld

Claims (1)

中心に主導体を有し、その外側に内部半導電層、主絶縁層、外部半導電層を有し、その外側に多数の帰路導体素線を同心撚りしてなる帰路導体を有する電力用直流同軸ケーブルの接続部において、接続部に位置する帰路導体の素線間の隙間がケーブル部に比べて広がっている部分の直下又は直上に、全周にわたって且つケーブル長さ方向に連続して、帰路導体素線と接触する金属層を設けたことを特徴とする電力用直流同軸ケーブルの接続部。 Direct current for power having a main conductor at the center, an inner semiconductive layer, a main insulating layer, and an outer semiconductive layer on the outside, and a return conductor formed by concentrically twisting a number of return conductor wires on the outside in connection of the coaxial cable, directly below or directly above the portion where the gap between the strands of the return conductor located on the connecting portion is spread as compared to the cable portion, in succession and the cable length direction over the entire circumference, return A connecting portion of a power DC coaxial cable, characterized in that a metal layer in contact with a conductor wire is provided.
JP2006154125A 2006-06-02 2006-06-02 DC coaxial cable connection for power Active JP5052824B2 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2006154125A JP5052824B2 (en) 2006-06-02 2006-06-02 DC coaxial cable connection for power
CN2011100520356A CN102170054B (en) 2006-06-02 2007-05-28 Connection portion of power supply DC coaxial cables
CN2007800050583A CN101385211B (en) 2006-06-02 2007-05-28 Method for connecting return conductors of power supply DC coaxial cables and connection portion between power supply dc coaxial cables
CN2011100520125A CN102170053B (en) 2006-06-02 2007-05-28 Connection portion between power supply DC coaxial cables
CN2011100520144A CN102255213B (en) 2006-06-02 2007-05-28 Method for connecting return conductors of power supply DC coaxial cables
EP16173784.6A EP3096427B1 (en) 2006-06-02 2007-05-28 Connection of return conductors in a connecting portion of power direct-current coaxial cable
PCT/JP2007/060839 WO2007142069A1 (en) 2006-06-02 2007-05-28 Method for connecting return conductors of power supply dc coaxial cables and connection portion between power supply dc coaxial cables
EP07744273.9A EP2026439B1 (en) 2006-06-02 2007-05-28 Connection of return conductors in a connection portion of power direct-current coaxial cables
NO20081510A NO344663B1 (en) 2006-06-02 2008-03-27 Procedure for connecting return conductors to DC coaxial power supply cables and connecting part between DC coaxial power supply cables

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JP2006154125A JP5052824B2 (en) 2006-06-02 2006-06-02 DC coaxial cable connection for power

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JP2007325442A JP2007325442A (en) 2007-12-13
JP5052824B2 true JP5052824B2 (en) 2012-10-17

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