JP5046349B2 - Manufacturing method of electronic parts adopting wet etching, electronic parts and hard disk suspension - Google Patents

Description

【００９１】
［エッチング性評価］
厚み１２．５μｍのポリイミドフィルムであるＡＰＩＫＡＬ ＮＰＩフィルム（商品名、鐘淵化学株式会社製）に、乾燥後の膜厚が１．５μｍ±０．３μｍになるようにＥＮ−２０（商品名、新日本理化株式会社製ポリイミドワニス）を両面に塗布し、前述の乾燥条件で乾燥した。得られたフィルムを接着層付きフィルムＡとした。
【００９２】
同様に、厚み１２．５μｍのＡＰＩＫＡＬ ＮＰＩフィルム（商品名、鐘淵化学株式会社製）の両面にＰＡＡ−Ａ（商品名、三井化学株式会社製）を塗布、成膜したものを接着層付きフィルムＢとした。下記の表２に接着層付きフィルムＡ及びＢのエッチングレートの比を示す。
【００９３】
【表２】

【００９４】
前記各接着層付きフィルムＡ及びＢを、厚み２０μｍのＳＵＳ３０４ＨＴＡ箔（商品名、新日本製鉄製）と、厚み１８μｍ（Ｒｚ＝１．５μｍ）のオーリン社製銅合金箔Ｃ７０２５（商品名）の間に挟み、２０Ｋｇ／ｃｍ² 圧力、２７０℃で１０分間、真空圧着し、ＳＵＳ：絶縁層：銅合金からなる３層材を２種類作製した。得られた積層体を積層体Ａ、積層体Ｂとした。
【００９５】
［絶縁層のエッチング評価］
前記工程で得られた各積層体Ａ及びＢを、ＳＵＳ側をマスクして、塩化第二鉄溶液に浸積し、銅箔をエッチングした。その後、乾燥し、適当な大きさに裁断した後、７０℃でマグネチックスターラーで渦ができるほど攪拌した東レエンジニアリング社製エッチング液ＴＰＥ−３０００（商品名）に浸積した。きれいにポリイミド膜が除去され、ＳＵＳ面が露出した時点で取り出した。このような方法で絶縁層をウェットエッチングした。
【００９６】
また、同様にして、圧力２５〜３０Ｐａ、プロセスガスＮＦ₃ ／Ｏ₂ ＝１０／９０％、周波数４０ｋＨｚにてプラズマ処理を行い、絶縁層をプラズマエッチングした。
【００９７】
ＳＵＳ上にポリイミド層が目視で残存してないことが確認できるまでエッチングし、このエッチングに要した時間で、絶縁層の膜厚を割った値（エッチングレート）を下記表３に示す。
【００９８】
【表３】

【００９９】
表３によれば、ウェットエッチングはプラズマエッチングに比べエッチングレートが大きく。非常に短時間で、絶縁層のエッチングが可能であることが確認された。
【０１００】
製版性評価
［導電性無機物層のパターニング］
３００ｍｍ×３００ｍｍの大きさの前記エッチング性評価の試験で調製した積層体Ａのステンレス層上、及び銅合金箔層上の両方の面に厚み５０μｍの塩基性水溶液現像型ドライフィルムレジストを加熱したロールラミネーターにて０．５ｍ／ｍｉｎの速さで、ロールの表面の温度１０５℃で、２〜４Ｋｇ／ｃｍの線圧でラミネート後、１５分間室温で放置した。このとき、積層体の両面にステンレス層と銅合金箔層があるため、ドライフィルムレジストのラミネート後も積層体は平坦であり、反りは確認されなかった。その後、所定のマスクを用いて真空密着露光機で１００ｍＪ／ｃｍ² 露光した。室温で１５分間放置後、Ｎａ₂ ＣＯ₃ １重量％水溶液で、３０℃、スプレー圧２Ｋｇ／ｃｍ² で６０秒間ドライフィルムレジストを現像し、レジストパターンを形成した。
【０１０１】
その後、塩化第二鉄水溶液にてステンレス層、銅箔層を同時に、エッチングした。その後、５０℃の３重量％ＮａＯＨ水溶液で、スプレー圧１Ｋｇ／ｃｍ² でドライフィルムレジストを剥離し、積層体Ａの導電性無機物層をパターニングした。このようにして、ステンレス層及び銅合金層がパターニングされ部分的に絶縁層が露出した積層体Ａが得られた。
【０１０２】
［ドライフィルムレジストの選定］
上記工程で得られた絶縁層が露出した積層体Ａを用いて以下の作業を行った。積層体Ａを、ＳＵＳ側をマスクして、塩化第二鉄溶液に浸積し、銅箔をエッチングした。その様にして露出させた接着層面に上記の塩基性水溶液現像型ドライフィルムレジストを、加熱したロールラミネーターで０．５ｍ／ｍｉｎの速さでロールの表面の温度１０５℃で、２〜４Ｋｇ／ｃｍの線圧で、ラミネートした後、１５分間室温で放置した。その後、ＯＲＣ製作所製平行光密着露光機にて、ライン＆スペースが、５００μｍ／５００μｍと８０μｍ／８０μｍのストライプマスクをサンプルに密着させ、ドライフィルムの推奨の露光量を３０〜２００ｍＪの範囲で片面露光後、サンプルを裏返し、同様のマスクを密着させて露光した。室温で１５分間放置後、Ｎａ₂ ＣＯ₃ １重量％水溶液で、３０℃、スプレー圧２Ｋｇ／ｃｍ² で６０秒間ドライフィルムレジストを現像した。その後、乾燥し、７０℃でマグネチックスターラーで渦ができるほど攪拌した東レエンジニアリング社製エッチング液ＴＰＥ−３０００（商品名）に浸積した。種々、浸漬時間を変化させたサンプルを、５０℃の３重量％ＮａＯＨ水溶液で、スプレー圧１Ｋｇ／ｃｍ² でドライフィルムレジストを剥離した。その様にして、所望の形状に絶縁層をウェットエッチングした。ドライフィルムレジストには、旭化成工業社製サンフォートＡＱ−１５５８（商品名）、ＡＱ−２０５８（商品名）、ＡＱ−２５３８（商品名）、ＡＱ−３０３８（商品名）、ＡＱ−４０３８（商品名）、ＡＱ−５０３８（商品名）、並びにニチゴーモートン社製ＮＰＥ５３８（商品名）、ＮＰＥ３４２（商品名）、新日鉄化学株式会社製ＳＦＰ−００ＧＩ−２５−ＡＲ（商品名）を使用した。ただし、ＳＦＰ−００ＧＩ−２５−ＡＲ（商品名）の現像に関しては指定の乳酸水溶液を用いた。
【０１０３】
各サンプルにつき、ストライプパターンの上部の寸法を計測し、その変化が急激な点を便宜的にドライフィルムレジストパターンが剥離、または溶解した時間とみなし、その時間までをドライフィルムレジストがパターン形状を保持している時間とした。
【０１０４】
各サンプルについてパターン保持時間を下記の表４に示す。
【０１０５】
【表４】

【０１０６】
表４によれば、旭化成工業社製サンフォートＡＱ５０３８（商品名）とニチゴーモートン社製ＮＰＥ３４２（商品名）がエッチング液耐性に比較的優れていることがわかった。また、旭化成工業社製サンフォートＡＱ２５３８〜ＡＱ５０３８（商品名）は、同一組成のドライフィルムレジストで厚さが違うだけであり、サンプル番号の大きくなるにつれてドライフィルムレジストの厚みが増えたものである。表４によれば、厚みが増えるにつれて、パターン保持時間が増えており、このことからエッチング液耐性も向上していると判断される。
【０１０７】
パターン補強処理
ドライフィルムレジストをパターニングした後に、ドライフィルムレジストのエッチング液に対する耐性をさらに与えるため、以下のような後処理を行った。用いたサンプルは、上記の工程で銅合金箔を前面除去した積層体Ａを用い、旭化成工業社製サンフォートＡＱ５０３８（商品名）をＬ／Ｓ＝５００μｍ／５００μｍと８０μｍ／８０μｍのストライプにパターニングして用いた。評価手法も前記ドライフィルムレジスト選定のときと同じ手法で評価した
［熱処理］
１２０℃に熱したホットプレート上に、アルミホイルを敷き、その上にサンプルＡを静置し、パターン保持時間を求めた。このとき以下の表の様に時間を変化させた。処理時間に対するパターン保持率の結果を下記表５に示す。
【０１０８】
【表５】

【０１０９】
［後露光処理］
ネガ型のドライフィルムレジストを用いているため、現像後に、さらにレジストパターンを強化する必要があるので、以下のような条件で後露光を行い、パターン保持時間を求めた。露光量に対するパターン保持率を下記表６に示す。
【０１１０】
【表６】

【０１１１】
表５及び表６によれば、パターン補強処理において加熱によるものの方が効果が大きかったが、後露光によるものでも熱処理ほどではないが効果があった。これらは、求める電子部品やプロセスにより適宜選択すると良い。またこれらの組み合わせでも、効果が確認されたが熱処理の効果の寄与が大きく、露光による効果はそれほど目立たなかった。
【０１１２】
絶縁層のパターニング用ドライフィルムレジストの製版
［ドライフィルムレジスト］
塩基性水溶液現像・塩基性水溶液剥離タイプのネガ型ドライフィルムレジストとして、以下の物を用意した。旭化成工業株式会社製サンフォートＡＱ‐１５５８（商品名、厚み１５μｍ）、同ＡＱ‐２０５８（商品名、厚み２０μｍ）、同ＡＱ‐２５３８（商品名、厚み２５μｍ）、同ＡＱ‐３０３８（商品名、厚み３０μｍ）、同ＡＱ‐４０３８（商品名、厚み４０μｍ）、同ＡＱ‐５０３８（商品名、厚み５０μｍ）、及びニチゴーモートン株式会社製ＡＬＰＨＯ ＮＰＥ５３８（商品名、厚み３８μｍ、エンボス処理あり）、同ＮＰＥ３４２（厚み４２μｍ、商品名、エンボス処理あり）。
【０１１３】
上記のサンプルを以下の手法で、面プレス（減圧下、及び常圧下）とロールプレス（減圧下、及び常圧下）を行って、ドライフィルムレジストラミネート後の積層体Ａの外観を検討した。
【０１１４】
［面プレス］
積層体Ａを、ドライフィルムレジスト（ＤＦＲ）により挟み、名機製作所製真空ラミネーターＭＶＬＰ−５００を用い、設定温度７５℃の熱板上にドライフィルム−積層体−ドライフィルムからなる順番で積層し、セットした後、チャンバー内気圧を３０ｍｍＨｇ（≒４ＫＰａ：大気圧の約１／２５）まで減圧後、プレス圧１０Ｐａで８０秒プレスした。また同様にして、プレスする際の内部気圧を常圧にしたものも行った。
【０１１５】
このようにしてラミネートを行った積層体は、常圧下では全てのサンプルにおいて、銅合金箔やステンレス箔がパターニングされている端部に所々に気泡が混入していた。また、減圧下でプレスを行ったときは、エンボスにより表面に微細な凹凸が施されているドライフィルムレジストは、気泡が混入していなかったが、エンボス加工がなされていないものは銅合金箔やステンレス箔がパターニングされている端部に所々に気泡が混入していた。しかし、全てのサンプルが平坦であり、反りは見うけられなかった。
【０１１６】
［ロールプレス］
積層体Ａを、ドライフィルムレジストで挟み加熱したロールラミネーターで０．５ｍ／ｍｉｎの速さでロールの表面の温度１０５℃で、２〜４Ｋｇ／ｃｍの線圧でラミネートした後、１５分間室温で放置した。このようにして、ラミネートを行った積層体は、すべて平坦な金属板上に静置すると、両端が約１ｃｍ〜２ｃｍほど浮き上がり、銅合金箔がパターニングされている側に反りかえっていた。また、減圧下でラミネートを行ったものは気泡の混入はなかった。しかし、常圧で行ったものは、銅合金箔やステンレス箔がパターニングされている端部に所々に気泡が混入していた。
【０１１７】
それぞれのサンプルで、ドライフィルムレジストの表面からパターニングされたステンレス箔（厚さ２０μm ）や銅合金箔（厚さ１８μm ）が、露出していないかを確認したところ、それぞれ金属層の厚さとドライフィルムレジストの厚さが同じか、小さいときに部分的に金属がドライフィルムレジストを突き破り、露出していた。評価結果を下記の表７に示す。
【０１１８】
【表７】

【０１１９】
［露光・現像］
上記工程で得られたドライフィルムレジストを積層された積層体Ａに対して、マスクパターンを被せ露光をｉ線で露光量３０〜１５０ｍＪ／ｃｍ² で行い、３０℃、１重量％Ｎａ₂ ＣＯ₃ でスプレー現像した。これにより、絶縁層加工レジストパターンは絶縁層上にパターニングされたステンレス層、及び銅合金箔層にオーバーラップするように形成した。
【０１２０】
もし、オーバーラップを行わないように絶縁層を残す領域にのみ絶縁層加工パターンを形成すると、ウェットエッチングによりレジストパターンもエッチングされ、当該パターンとステンレス層または銅合金層との間に隙間が形成されて、エッチングが入ってしまい、絶縁層の加工したくないところをエッチング加工してしまう可能性がある。これを防ぐために、絶縁層加工レジストパターンは、絶縁層上にパターニングされたステンレス層または銅合金層とオーバーラップするように形成した。特に、ステンレス層または銅合金層の線幅が狭い場合は、線幅の狭い導電層上に絶縁層加工レジストパターンを形成することは、このような点でも効果がある。
【０１２１】
このとき、反りのあったサンプルは露光時にマスクに密着せず、吸引により強制的に密着させたところ、その反りの程度によってアライメント精度が他のサンプルの３〜５倍程度悪化した。
【０１２２】
［ウェットエッチング］
上記工程で得られたサンプルを、以下の条件でウェットエッチングを行った。なお、ドライフィルムレジストのエッチング液耐性向上処理は行なわなかった。ウェットエッチング条件としては、前処理として、ノニオン系界面活性剤である日信化学工業製サーフィノール１０４Ｅ（商品名）の０．５％水溶液に、３０秒浸漬させた後に、液中スプレー方式水平搬送型エッチング装置に投入した。エッチング液は東レエンジニアリング社製エッチング液ＴＰＥ−３０００を用い、処理温度は８０℃とした。ポリイミド層のエッチング液に対するエッチングレートや、エッチングする温度にもよるが、この場合各サンプルの、エッチングに要する時間は７０〜９０秒程度であった。
【０１２３】
その際に、レジストパターンに気泡が混入していたサンプルとステンレス層および、銅合金箔層が露出していたサンプルは、エッチングが目的の形状になっていない部位が多く見うけられた。このような不良の原因は、ウェットエッチングはエッチングレートが非常に大きいため、エッチング液にすこし触れただけでもエッチングが行われるため、銅合金箔層のエッチングパターンを完全にドライフィルムレジストが被覆していない場合は、不良となりやすいからである。
【０１２４】
良好にエッチングが終了したサンプルの電子顕微鏡写真を図２に、エッチング不良が発生したサンプルの電子顕微鏡写真を図３に示す。図３によれば、銅合金箔のエッチングパターンの基部における周辺のポリイミドの絶縁層が浸食されていることが分かる。このような不良は、図１（ｇ）において、ドライフィルムレジスト５の厚みが導電性無機物層３又は２の厚さの１．１倍未満の場合に導電性無機物層３又は２の基部における絶縁層１の周辺に発生する。
【０１２５】
［ウェットエッチング後処理］
上記の積層体Ａに、旭化成工業社製サンフォートＡＱ５０３８（商品名）をラミネートし、絶縁層のウェットエッチングを行ったサンプルについて、エッチング浴から取り出した後、以下のような組成のリンス浴の満たされたバットにサンプルを３０秒間浸漬し、そのバットを揺動するという手法でリンス処理を行った。リンス処理を行わないと、エッチングされたポリイミドの残渣やエッチング液等が表面に残り外観を損ねる。このとき、ドライフィルムレジストの剥離の工程における剥離液をそのままリンスとして用いて、リンスとドライフィルム剥離の工程を同時に行ってもよい。
下記の表８のリンス無しとは、エッチング液から取り出した後、放置した場合である。
【０１２６】
【表８】

【０１２７】
［剥離］
絶縁層のパターニングに用いたドライフィルムレジストに対して、５０℃、水酸化ナトリウム３Ｗｔ％ の高温塩基性水溶液をスプレーすることにより、ドライフィルムレジストを積層体から剥離した。絶縁層がポリイミド等のアルカリ耐性に乏しい場合は、エタノールアミン等の有機塩基性水溶液を使用すると良い。
【０１２８】
［酸洗・防錆処理・金めっき・はんだ印刷］
上記の方法により形成されたＨＤＤ用のワイヤレスサスペンションブランクのパターニングされた銅合金箔層に、加工の仕上げとして金めっきを施した。該金めっきは、日本高純度化学製シアン金めっき浴：テンペレジストＥＸ（商品名）を用いて、６５℃にて電流密度Ｄｋ＝０．４Ａ／ｄｍ² で約４分間通電して１μｍ厚の成膜を行った。
【０１２９】
上記のようにして作製した、サンプルについて各性能を評価したところ、ドライフィルムレジストをラミネートした状態で、反りが見うけられたサンプルはアライメント精度が悪く、気泡の混入があったもの、パターニングされたステンレス箔や銅合金箔がドライフィルムレジストから露出していたものはエッチング形状不良が見うけられた。その結果を下記の表９に示す。
【０１３０】
【表９】

【０１３１】
【発明の効果】
本発明によれば、ウェットエッチングにより導電性無機物層のパターニング、引き続き、ウェットエッチングにより絶縁層のパターニングを行っているので、ドライエッチングに比べて短時間のエッチングが可能で生産性がよい。特に、ハードディスクドライブ用サスペンションのように、エッチングにより除去される絶縁層の面積が広く、しかも微細なパターンが必要とされている製品は、ウェットエッチングの適用における効果が絶大であるため、これまで以上に作業性が良く、不良の少ない製造方法となる。
【０１３２】
しかも、ハードディスクドライブ用サスペンション等の電子部品には高精度のパターニングが要求されるが、ハードディスクドライブ用サスペンション等を作製するための剛性の無い基板に対して液体レジストを塗布してレジスト膜を精度よい均一な厚みとすることは困難であり、塗布・乾燥工程における非常に厳密な管理を必要とし、微細なエッチングには不適であったが、本発明では絶縁層のパターニングを、ドライフィルムレジストを用いて行っているので、もともと一定の膜厚のドライフィルムを用いた方が、レジストを形成するのに工程管理が容易であるという利点や、微細なエッチングに適するという利点がある。
【０１３３】
ウェットエッチングの際に表面に微細な凹凸が形成されたドライフィルムレジストを使用して本発明の電子部品を製造する場合には、該微細な凹凸により、気泡の逃げ場が生まれ、ドライフィルムレジストをラミネートしても気泡を抱き込むことを防げ、したがって、積層体のエッチング耐性が向上する。
【０１３４】
本発明の電子部品の製造方法においては、ドライフィルムレジストをラミネートしたものを塩基性水溶液による現像、及び塩基性水溶液での剥離を行うことができるので、製造設備が安価であり、また、廃棄に問題のある有機溶剤を使用しない利点がある。
【０１３５】
本発明の電子部品の製造方法において、導電性無機物層のパターニングが行われた積層体に対して真空プレスにより減圧下でドライフィルムをラミネートする場合には、シート単位毎のラミネートでもラミネート後の反りの防止、且つ気泡抱き込みを防止することができる。
【０１３６】
本発明の電子部品の製造方法において、ドライフィルムレジストのラミネート体に露光、現像してパターニングした後、紫外線照射処理、加熱処理、及び紫外線照射処理と加熱処理の組合せた処理から選ばれた処理をした場合には、絶縁層のエッチャントに対するドライフィルムレジストの耐性を向上させることができる。
【０１３７】
絶縁層のウェットエッチングに要する時間が１０秒以上３０分以内、好ましくは１０秒以上１５分以内、さらに好ましくは１０秒以上５分以内である場合には、強塩基性水溶液のエッチング液でエッチングしても、エッチング時にドライフィルムレジストが剥離することがなく、精度の良いウェットエッチングが行える。
【０１３８】
厚みが積層体表面の凹凸の１．１〜５倍の厚さのあるドライフィルムレジストを用いた場合は、ドライフィルムレジストのラミネート後に積層体の凸部がドライフィルムレジストを突き破って露出することがなく、良好なエッチングパターン形状が得られる。
【図面の簡単な説明】
【図１】ポリイミドの絶縁層の片面に銅の導電性無機物層、他の片面にＳＵＳの導電性無機物層を形成した積層体を出発原料とした、ウェットエッチングによる電子部品の製造方法を示すプロセス図である。
【図２】良好にエッチングが終了したサンプルの電子顕微鏡写真である。
【図３】銅合金箔が露出し、エッチング不良が発生したサンプルの電子顕微鏡写真である。
【符号の説明】
１ 絶縁層
２、３ 導電性無機物層
４、５ ドライフィルムレジスト[0001]
BACKGROUND OF THE INVENTION
In the present invention, an insulating layer is patterned by wet etching using a laminate composed of a conductive inorganic material-insulating layer-conductive inorganic material or a conductive inorganic material-insulating layer that can be patterned by a wet process. The present invention relates to a method for manufacturing an electronic component, an electronic component itself obtained by the manufacturing method, and a suspension for a hard disk drive.
[0002]
[Prior art]
In recent years, with the rapid development of semiconductor technology, miniaturization of semiconductor packages, increase in pin count, fine pitch, miniaturization of electronic components, etc. have rapidly progressed, and the era of so-called high-density packaging has been entered. Along with this, printed wiring boards have been made thinner and thinner from single-sided wiring to double-sided wiring (Iwata, Harazoen, Electronic Materials, 35 (10), 53 (1996)).
[0003]
A pattern forming method for forming such wiring / circuits for electronic components includes a conductive inorganic material layer (mainly metal layer) -insulating layer-conductive inorganic material layer (mainly metal layer) in a conductive layer structure. After the conductive inorganic layer is etched with an acidic solution such as ferric chloride and wiring is formed, an insulating layer is formed in a dry state such as plasma etching or a wet state such as hydrazine in order to establish electrical connection between the layers. There is a method of connecting the wirings by plating or conductive paste or the like by removing them into a shape (Japanese Patent Laid-Open No. 6-164084). Another pattern forming method is a method in which an insulating layer is provided in a desired shape using photosensitive polyimide (Japanese Patent Laid-Open No. 4-168441) or the like, and then wiring is formed in the gap by plating (electronic packaging) And the 7th Research Discussion Meeting Proceedings in 1999).
[0004]
In recent years, the price of electric products, especially personal computers, has been reduced, and the components and parts used for these products are strongly priced, so how to make electronic components at a low cost is a very big issue. It has become.
[0005]
Currently, along with the rapid growth of personal computer production, the production of hard disk drives built into it is also increasing. In a hard disk drive, a part called a suspension that supports a magnetic reading head connects a copper wire to a stainless steel leaf spring, and a copper wire is directly formed on the stainless steel leaf spring to cope with downsizing. The main product is changing to what is called wireless suspension.
[0006]
Such a wireless suspension is mainly manufactured using a three-layer material composed of a conductive inorganic layer (mainly metal layer) -insulating layer-conductive inorganic layer (mainly metal layer). Examples of the three-layer material include a layer structure in which a copper alloy foil is laminated on one side of an insulating layer and a stainless steel foil is laminated on the other side. The wireless suspension is a member that scans on a disk that rotates at high speed and applies fine vibrations. Therefore, the adhesion strength of the wiring (conductive inorganic layer) to the insulating layer is very important, and strict specifications are required. ing. In addition, since the hard disk is a device for recording information, high reliability is required for reading and writing data, and the specifications are strict against the adhesion strength of wiring, dust such as dust generated from the suspension, and outgas.
[0007]
In general, the laminate such as the above three-layer material used for electronic components is a low-expansion insulating layer in order to make the thermal expansion coefficient of the conductive inorganic layer and the insulating layer the same in order to prevent warping of the substrate, In particular, low expansion polyimide is often included. Laminates using only low-expansion polyimide for the insulating layer are low-expansion polyimide Kapton (trade name) manufactured by Toray DuPont Co., Ltd., Upilex (trade name) manufactured by Ube Industries, Ltd. Polyimide films such as Apical (trade name) manufactured by Co., Ltd. are used, and these form a metal layer (mainly copper) by sputtering or electroless plating on the surface of the low expansion polyimide film, and then electrolysis There is one in which the thickness of the conductor layer is increased by plating (referred to as a type I laminate). In addition, as another type of laminate, an adhesive other than polyimide (for example, an epoxy adhesive) is formed on the surface of low expansion polyimide, other than polyimide-low expansion polyimide-other than polyimide There is a laminate in which a conductor foil is bonded to the insulating layer by thermocompression bonding using an insulator having a three-layer structure made of the above adhesive (referred to as a type II laminate). Furthermore, as another type of laminate, an insulator having a three-layer structure composed of adhesive polyimide-low-expansion polyimide-adhesive polyimide formed by forming an adhesive polyimide layer on the surface of low-expansion polyimide, There is a laminate in which a conductor foil is bonded to the insulating layer by thermocompression bonding (referred to as a type III laminate).
[0008]
In the type I laminate, since the insulating layer is made of a single composition polyimide, it is difficult to warp, and the metal layer can be made thin, which is advantageous for forming a thin wiring. There is an advantage of being. Since the type II laminate and the type III laminate are formed by thermocompression bonding, various conductor layers can be selected. For example, it is possible to produce a laminated body using rolled copper foil, stainless steel foil, or the like. Type II laminates have good adhesion, and Type III laminates have the advantage of good heat resistance because the adhesive layer is polyimide with good heat resistance. Moreover, both have the advantage that the thickness of a metal layer can be enlarged.
[0009]
Since the wireless suspension requires springiness, a stainless steel foil is often used as the metal layer, and examples of the laminated structure include copper foil-adhesive polyimide-low expansion polyimide-adhesive polyimide-stainless. It is done. Conventionally, since a wireless suspension has a large etching area of an insulating layer, the insulating layer is mainly patterned by plasma etching, which is the same dry process, instead of a laser. However, since plasma etching has a low etching rate, the time required for etching is long, and since it is produced in units of sheets (sheets), the productivity is poor and the apparatus is expensive, so the production cost is very high. There is a fault that becomes.
[0010]
For these reasons, it has been desired to pattern the insulating layer by a wet process that has a high etching rate, and thus can be produced with high productivity and low device cost.
[0011]
Furthermore, wet etching technology is also used for electronic parts such as flexible printed boards and multilayer boards that have been drilled with a laser in a hole for conducting conduction between the layers of the multilayer board and then punched with a mold. As a result, the drilling and die-cutting processes can be performed at the same time, and even fine shapes that could not be cut out with the mold can be formed. It is desired.
[0012]
With regard to the type II laminate, when an epoxy adhesive is used, there is a disadvantage that the solvent resistance is too high to perform wet etching at all.
[0013]
For the type III laminate, the difference in etching characteristics between the adhesive polyimide layer and the low-expansion polyimide layer is too great, so that the cross-sectional shape when etched is not clean, and an electronic component is actually produced by wet etching. Is difficult.
[0014]
The type I laminate is partially processed by wet etching. However, since the formation of the conductive inorganic layer is a process such as sputtering, metal is struck against the polyimide surface at high speed, so the metal penetrates not only into the surface layer but also inside the polyimide layer, so the surface polyimide is slightly modified Resulting in. In the type I laminate, the adhesion between the insulating layer and the conductive inorganic layer is mainly due to the chemical bond or chemical interaction between the conductive inorganic layer and the insulating layer. The affinity with is getting stronger. Therefore, when wet etching is performed on the type I laminate, there is a problem that a defect in which the modified portion is left as an etching residue in the insulating layer at the interface with the conductive inorganic layer is likely to occur.
[0015]
On the other hand, in the laminated body in which the conductive inorganic layer and the insulating layer are integrated by pressing, the anchor effect due to the irregularities on the surface of the conductive inorganic layer contributes more to the adhesion than chemical bonds and chemical interactions. Therefore, it is difficult for etching residue to occur. In addition, as described above, in the production of a laminate by pressing, there is a great degree of freedom in selecting a conductive inorganic layer, so products that have been formed with a conductive inorganic layer by sputtering so far have not been applicable. Can be produced.
[0016]
In general, polyimide is often poor in solvent solubility, but since it is decomposed by a solution of hydrazine or alkali, various wet etching of a polyimide film with a chemical solution has been studied so far. For example, Japanese Patent Application Laid-Open No. 50-4577 discloses a method for manufacturing a wiring structure using hydrazine and ammonia. Japanese Laid-Open Patent Publication No. 58-103531 discloses a method for etching a polyimide film with an inorganic basic aqueous solution. Japanese Laid-Open Patent Publication No. 57-65727 discloses a polyimide etching method using an aliphatic diamine. In addition, the currently disclosed polyimide wet etching method uses a chemical solution in which water or an organic polar solvent is mixed with hydrazine, inorganic alkali, organic alkali, aliphatic amine (diamine), or aliphatic alcohol as a solvent. (For example, JP-A-58-74041, JP-A-58-96632, JP-A-3-101228, JP-A-5-190610, JP-A-5-202206) Gazette, JP-A-7-157560).
[0017]
However, since hydrazine, which is a component that decomposes polyimide, is highly toxic and is not suitable for use in the production process, recently disclosed examples include etching of a system in which various additives are added to an inorganic basic aqueous solution. There are many solutions.
[0018]
  These conventional methods of patterning by wet etching of a polyimide film include a method of using a metal for a pattern mask (Japanese Patent Laid-Open No. 5-283486), a method of using a negative liquid resist for solvent development and solvent stripping (Japanese Patent Laid-open No. 5-301981), a method using a positive type liquid resist for solvent development and solvent peeling (Japanese Patent Laid-Open Nos. 51-27464 and 53-49068)., SpecialJP-A-57-65727 and JP-A-58-74041). These conventional methods of patterning by wet etching of a polyimide film have the effect of reducing the time required for patterning the insulating layer.
[0019]
In addition, laminates that use polyimide as an insulating layer are often thin and have low rigidity, so they have the problem of poor handling properties compared to conventional rigid glass epoxy substrates. This is a major constraint.
[0020]
[Problems to be solved by the invention]
However, in the method of etching polyimide using the metal layer as a pattern mask, the metal layer is etched so as to have a final insulating layer pattern shape, and the insulating layer is formed using the etched metal layer as a pattern mask. After etching, it was necessary to re-pattern the metal layer into the desired wiring shape by etching. In other words, this method requires a total of two metal etching processes, and the etching solution touches the metal during polyimide etching, which causes deterioration of the metal layer.
[0021]
In addition, when a resist pattern is prepared using a solvent developing / peeling type liquid resist, an organic solvent is required for the developer and the stripping solution. It was. In addition, when a solvent developing / peeling type liquid resist is used, it has been difficult to stably form a coating film having a uniform thickness for the following reason. That is, an electronic component such as a suspension for a hard disk drive is manufactured by applying a liquid resist to a substrate having low rigidity and drying it, and it is difficult to produce a coating film having a uniform thickness. Electronic parts such as hard disk drive suspensions require high-precision patterning, but when manufacturing resist films by coating, the coating and drying process is very strict in order to make the coating film accurate and constant in thickness. Needed to be managed.
[0022]
Basically, resists that can be developed with basic aqueous solution and stripped with basic aqueous solution will be stripped from the laminate, which is the substrate, due to the alkaline component of the etchant when polyimide etchant containing inorganic basic aqueous solution is used. Therefore, it was considered difficult to produce an electronic component by etching the laminate using such a resist.
[0023]
Moreover, the polyimide wet etching technique currently disclosed is mainly a laminate using an insulating layer composed of a single polyimide layer, and a wet laminate obtained by laminating a plurality of polyimide layers. There are only a few reports of examples of processing by etching (Japanese Patent Laid-Open No. 6-164084). This is because when a plurality of layers of polyimide are laminated, the etching characteristics of each layer are different, so that a good cross-sectional shape cannot be obtained by wet etching.
[0024]
Since the hard disk suspension is an essential element for the suspension for hard disks, a laminate produced by sandwiching a low-expansion polyimide film with an adhesive resin layer on both sides between the conductor foil and the stainless steel foil and pressing them Or, a plurality of polyimide layers are laminated on a stainless steel foil, and the laminate is further manufactured using a laminate in which a conductor layer is formed by thermocompression bonding. Therefore, facing each of the above problems, it has not been possible to produce a suspension by patterning a polyimide layer by wet etching.
[0025]
Therefore, the present invention is low in manufacturing an electronic component by wet etching a laminate composed of a conductive inorganic layer-insulating layer-conductive inorganic layer or a laminate composed of a conductive inorganic layer-insulating layer. It is an object of the present invention to provide a production method that eliminates the problems of the prior art described above without using an organic solvent having a problem in disposal due to cost.
[0026]
An additional object of the present invention is to realize a manufacturing method that enables etching of a conductive inorganic layer in one time in order to prevent deterioration of the conductive inorganic layer, and to provide a chemical solution used for developing and stripping resist to the environment. Provided is a method for manufacturing an electronic component in which wet etching using a resist can be applied to an insulating layer having a single-layer structure or a laminated structure of two or more insulating unit layers without using a heavy organic solvent.
[0027]
Further, an additional object of the present invention is to provide a method for manufacturing an electronic component that has a good cross-sectional shape after wet etching and has a high etching accuracy, an electronic component obtained by the manufacturing method, and a suspension for a hard disk I will provide a.
[0028]
Further, an additional object of the present invention is to enable wet etching of the laminate using a dry film resist, in particular, development with an aqueous solution, in particular, development with a basic aqueous solution and stripping with a basic aqueous solution. is there.
[0029]
Further, an additional object of the present invention is to realize wet etching of the laminated body by processing of a basic aqueous solution development using a dry film resist and a basic aqueous solution peeling process even by processing for each sheet (sheet). is there.
[0030]
  The method for producing an electronic component of the present invention includes patterning a conductive inorganic layer by wet etching a laminate composed of a conductive inorganic layer-insulating layer-conductive inorganic layer, or a laminate composed of a conductive inorganic layer-insulating layer, Next, a method for manufacturing an electronic component in which an insulating layer is patterned by wet etching, wherein the insulating layer in the stacked body is wet-etchable and has a single-layer structure or a stacked structure of two or more insulating unit layers. The insulating layer is patterned by etching using a dry film resist.
  A preferred embodiment of the method for producing an electronic component according to the present invention is a conductive inorganic layer by conducting wet etching on a laminate composed of a conductive inorganic layer-insulating layer-conductive inorganic layer, or a laminate composed of a conductive inorganic layer-insulating layer. A method of manufacturing an electronic component, in which an insulating layer is patterned by wet etching, and the insulating layer in the laminate is wet-etchable and has a single-layer structure or a laminated structure of two or more insulating unit layers. All layers are polyimide resin, and the patterning of the insulating layer by wet etching is performed by laminating a dry film resist under reduced pressure on the laminate obtained by patterning the conductive inorganic material layer, and the obtained dry film Performed by wet etching on the resist laminate, The rum resist has fine irregularities formed on the surface, the fine irregularities are provided by embossing, and the dry film resist can be developed with a basic aqueous solution and peeled off with a basic aqueous solution. The dry film resist laminate is wet-etched by exposing, developing and patterning the dry film resist laminate, and then using ultraviolet rays as a treatment for improving the resistance of the dry film resist to the etchant of the insulating layer. A treatment selected from irradiation treatment, heat treatment, and a combination of ultraviolet irradiation treatment and heat treatment is performed.
[0031]
In the method for manufacturing the electronic component, it is a preferable aspect that the dry film resist can be developed with an aqueous solution, particularly, a basic aqueous solution, and can be peeled off with the basic aqueous solution. By performing development with a basic aqueous solution and peeling with a basic aqueous solution, the apparatus cost can be reduced, and there is an advantage that there is no problem of processing of a used organic solvent.
[0032]
As a result of investigating the resistance of various dry film resists to various etching solutions, the etching conditions, dry film resist film thickness, etc. for the basic aqueous solution development / basic aqueous solution peeling type dry film resists should be optimized as follows. For example, it has been found that depending on the material of the dry film, it has resistance to an etching solution. Moreover, it discovered that it was similarly resistant also about the dry film resist of lactic acid aqueous solution development and lactic acid aqueous solution peeling type other than basic aqueous solution development and basic aqueous solution peeling.
[0033]
That is, in order to impart such etching resistance of a dry film to a laminate, a dry film resist is laminated on a laminate subjected to patterning of a conductive inorganic layer under reduced pressure by a vacuum press. It is desirable to perform wet etching on the laminate of the dry film resist. By subjecting the dry film resist to surface pressing on the laminate under reduced pressure, the problem of warping after lamination is solved.
[0034]
The occurrence of warping after laminating this dry film resist occurs as follows. The three-layered laminate that is usually used is made by thermocompression bonding under reduced pressure in pursuit of a high degree of flatness, so it is not a long product wound up in a roll shape but a sheet form for each sheet. . When a dry film resist is laminated on a substrate that has been subjected to metal patterning by a roll laminator to form an insulating layer pattern in the laminate, the laminate itself warps because the laminate itself is thin and lacks rigidity. As a result, there has been a problem that the misalignment between the mask and the resist during exposure to the resist becomes large. Wet etching of insulating layers is characterized by better dimensional accuracy of patterning than plasma etching, which is the current dry process, so such misalignment is a major problem. Is very important in establishing a wet etching process.
[0035]
Therefore, the present invention solves the problem of warping after lamination by subjecting the dry film resist to surface pressing under reduced pressure. However, when a normal dry film resist is used, in the case of surface pressing, since the wiring of the conductive inorganic layer is formed on the insulating layer, the wiring of the conductive inorganic layer is uneven. Alternatively, there is a problem that bubbles may be encapsulated between the dry film resists at the convex wrinkles.
[0036]
In order to prevent the inclusion of bubbles as described above, it is desirable that fine irregularities be formed on the surface of the dry film resist. The generation of bubbles can be suppressed by laminating a dry film resist having irregularities on the surface so that the irregularities are directed to the irregularity side (that is, the wiring side) of the conductive inorganic layer. In other words, the unevenness creates an escape area for bubbles and prevents the bubbles from being embraced.
[0037]
In addition, in order to impart the etching resistance as described above to the laminate, the dry film resist laminate is exposed, developed and patterned, and as a process for improving the resistance of the dry film resist to the etchant of the insulating layer, It is desirable to perform a treatment selected from ultraviolet irradiation treatment, heat treatment, and a combination of ultraviolet irradiation treatment and heat treatment.
[0038]
Moreover, in order for the above conditions to exhibit an effect, it is desirable that the thickness of the insulating layer of the laminate is 3 μm to 500 μm. If the insulating layer is thicker than 500 μm, the time required for etching becomes longer, the dry film resist is invaded by the etching solution, and the shape of the dry film resist cannot be maintained, and if it is less than 3 μm, the insulation reliability is low. Because it becomes.
[0039]
Moreover, in order to prevent the exposure of the inorganic layer and improve the etching shape, the thickness of the dry film resist is 1.1 to 5 times the thickness of one conductive inorganic layer of the laminate as a raw material. It is desirable to be.
[0040]
Further, in order to impart the etching resistance as described above to the laminate, the time required for wet etching of the insulating layer is 10 seconds to 30 minutes, preferably 10 seconds to 15 minutes, more preferably 10 seconds to 5 seconds. Desirably within minutes.
[0041]
From the viewpoint of productivity and etching shape stability, it is desirable that the temperature during wet etching of the insulating layer be 10 ° C. or higher and 120 ° C. or lower.
[0042]
Dry film resists that can be developed and stripped with a basic aqueous solution are currently the most versatile and are inexpensive, have many varieties, and have a wide range of choices. Many devices are also commercially available for development and stripping processes. Therefore, it is easy to obtain and the price is low. Further, in the case of an inorganic basic aqueous solution, the waste liquid can be easily treated, so that the cost for the entire process can be greatly reduced as compared with the case of using a solvent developing / solvent peeling type liquid resist.
[0043]
The laminate of the present invention is particularly useful for a suspension for a hard disk drive, because it is a method of manufacturing an electronic circuit component, and a laminate having a good cross-sectional shape after wet etching and a good etching accuracy.
[0044]
DETAILED DESCRIPTION OF THE INVENTION
Specific examples of preferred embodiments will be outlined below with reference to process diagrams for the electronic component manufacturing method of the present invention. However, the present invention is not limited to this. FIG. 1 shows a method of manufacturing an electronic component by wet etching using a laminate in which a copper conductive inorganic layer 3 is formed on one side of a polyimide insulating layer 1 and a SUS conductive inorganic layer 2 is formed on the other side as a starting material. FIG.
[0045]
The layer structure indicated by (a) is a laminate of starting materials. A dry film resist 4 is laminated on each of the conductive inorganic layers 2 and 3 on the front and rear surfaces of the laminate by roll press or surface press to obtain a laminate having a laminate structure shown in (b). The laminate is exposed with a mask so that the conductive inorganic layers 2 and 3 have a desired pattern, and then exposed to Na.₂CO_ThreeDevelopment is performed with an aqueous solution to form a resist pattern in the state shown in (c). Then FeCl_ThreeEtching the conductive inorganic layers 2 and 3 with an aqueous solution forms an etching pattern of the conductive inorganic layers 2 and 3 according to the resist pattern in the state shown in (d). Next, the resist is dissolved and peeled with an aqueous NaOH solution or an aqueous KOH solution to obtain an etching pattern of the conductive inorganic layers 2 and 3 in the state shown in FIG. Next, the dry film resist 5 is laminated on the front and back surfaces of the laminate of the conductive inorganic layers 2 and 3 in the state (e) by roll press or surface press, and the laminate having the laminate structure shown in (f). Get. The laminate is exposed with a mask so that the insulating layer 1 has a desired pattern, and then exposed to Na.₂CO_ThreeDevelopment is performed with an aqueous solution to form a resist pattern in the state shown in (g). Next, by etching the insulating layer 1 with a basic aqueous solution, an etching pattern of the insulating layer 1 according to the resist pattern in the state shown in (h) is formed. Next, the resist is dissolved and peeled with an aqueous NaOH solution or an aqueous KOH solution to obtain the electronic component of the present invention in which the etching pattern in the state shown in (i) is formed.
[0046]
Next, each component of the present invention will be specifically described.
[0047]
Laminated body
The laminate used in the present invention has a layer structure composed of a conductive inorganic layer-insulating layer-conductive inorganic layer or an insulating layer-conductive inorganic layer. Here, the conductive inorganic layer used means a conductive material layer that is not an organic substance. For example, a pure metal layer such as copper or iron, an alloy layer such as stainless steel, and the surface of these metal layers are treated. Material layers, single crystal silicon layers, inorganic semiconductor layers, metal oxide layers, and the like, and when the conductive inorganic layers are formed on both sides of the insulating layer, the respective conductive inorganic layers may be the same. And may be different. In particular, when used as an electronic component, copper, copper alloy, iron, nickel, stainless steel and the like are preferably used. These conductive inorganic layers preferably have a thickness in the range of 0.1 μm to 1 mm, and more preferably in the range of 0.1 μm to 200 μm, particularly when the conductive inorganic layer is a metal.
[0048]
When the electronic component obtained by the method for manufacturing an electronic component according to the present invention is used for a suspension for a hard disk drive, it is particularly limited as long as one of the conductive inorganic layers in the laminate as a starting material is stainless steel. Although not intended, SUS304 is preferable from the viewpoint of the spring characteristics and dimensional stability required for the suspension, and more preferably, a tension annealing treatment is performed at a temperature of 300 ° C. or higher. The preferred thickness range of the stainless steel foil is 10 to 70 μm, more preferably 15 to 30 μm.
[0049]
Examples of the other conductive inorganic layer of the laminate as a starting material include a copper foil and a copper alloy foil having a thickness of 3 to 20 μm. The copper alloy foil is an alloy foil made of different elements such as copper and nickel, silicon, zinc, tin, beryllium, etc. and having a copper content of 80% or more.
[0050]
These stainless steel foils and copper alloy foils may be subjected to chemical or mechanical surface treatment for the purpose of improving adhesive strength and the like.
[0051]
  The insulating layer in the laminate is, ThinPolyimide resin from the viewpoint of insulation and heat resistance in the filmadopt.In addition, a plurality of insulating unit layers constituting the insulating layer may be laminated for the purpose of improving the adhesiveness with the conductive inorganic layer. For example, an adhesive insulating layer may be included. In that case, it is preferable that all the layers are polyimide from a heat resistant and insulating viewpoint. Each of these layers may have a different composition depending on the required characteristics, or a plurality of layers having the same composition may be used. As such an example, a laminate composed of stainless steel-adhesive polyimide A-low expansion polyimide-adhesive polyimide B-copper is mentioned, and the adhesive polyimides A and B are respectively conductive inorganic layers that are adherends. However, since it is different from stainless steel and copper, it has a different composition from the necessity of adjusting the composition to adhere well to each adherend.
[0052]
Also, from the viewpoint of preventing warping of the substrate, it is preferable to use at least one of the insulating layers having a coefficient of thermal expansion (linear thermal expansion coefficient) that is relatively similar to that of the conductive inorganic layer (Japanese Patent Laid-Open No. Sho). 60-157286), and the allowable range of the difference in thermal expansion coefficient is ± 15 ppm. Furthermore, since the conductive inorganic substance generally has a coefficient of thermal expansion of 30 ppm or less, an insulating layer having a coefficient of thermal expansion of 30 ppm or less is preferably used. Moreover, when it is desired to suppress the occurrence of warpage more strictly, the total thickness of the insulating layer of 30 ppm or less is preferably 1/2 or more of the total thickness of all the insulating layers.
[0053]
In particular, the etching characteristics of a polyimide layer having a plurality of insulating layers in the laminate are important. When the insulating layer in the laminate of the present invention is composed of two or more insulating unit layers, the ratio of each layer having a high etching rate to a small one during wet etching is 6: 1 to 1: 1, preferably 4: Those within the range of 1: 1 to 1: 1 are desirable. If each insulating unit layer having an etching rate within this range is selected, the insulating layer has a good etching shape. Therefore, since the wet etching can be performed with high accuracy even in a laminate for wireless suspension, which has conventionally been required to have strict specifications, etching can be performed in a shorter time and productivity is better than dry etching.
[0054]
The total thickness of the insulating layer is preferably in the range of 3 μm to 500 μm. Furthermore, from the viewpoint of productivity and from the viewpoint of the resistance of the dry film resist to the etching solution, the wet etching processing time is preferably 10 seconds or more and 30 minutes or less, more preferably 15 minutes or less. On the other hand, exceeding 30 minutes leads to poor productivity. If the etching rate under the conditions for wet etching is large and the insulating layer having a thickness of 500 μm or more can be etched in 30 minutes, the thickness of the insulating layer may be 500 μm. In the case where etching cannot be performed, the allowable range is a thickness capable of etching the insulating layer over 30 minutes. Specifically, when the etching rate of the insulating layer is 20 μm / min, the allowable range of the thickness of the insulating layer is up to 600 μm, and when the etching rate is 2 μm / min, the allowable range is up to 60 μm. is there.
[0055]
Taking wet etching of an insulating layer as an example of etching of polyimide as an insulating layer with a basic aqueous solution, an imide bond reacts with a hydroxide ion in the solution to open a ring to become a polyamic acid. Even in this state, it is easier to dissolve in a basic aqueous solution than in the case of polyimide, but the solubility is improved by further hydrolyzing the amide group of the amic acid into hydroxide ions and decreasing the molecular weight of the polymer. If the molecular chain has a group that is easily hydrolyzed, it may be hydrolyzed. In general, in the case of insulating layers made with the same structure and the same manufacturing conditions, the speed is approximately proportional to the number of times the hydroxide ions collide with the polyimide imide bond, which is thermodynamically determined by temperature. It increases exponentially with.
[0056]
Due to this mechanism, when the etching rate is a linear polymer, it seems that the molecular weight is not so much affected within the practical molecular weight range. There are data to reinforce the hypothesis.
[0057]
  Adhesive insulating layer constituting an insulating layer in a laminate as a starting material used in the present inventionFor this, polyimide is used.In the present invention, the adhesive polyimide is a polyimide having an adhesion strength of 100 g / cm or more in a 90 ° peel test with an adherend, and thermoplastic polyimide is mainly used, but is not particularly limited.
[0058]
The laminate as a starting material used in the present invention is formed by coating and laminating one or more solutions of the insulating layer directly on the conductive inorganic layer to form an insulating layer and laminating the other conductive inorganic layer. After that, even the one produced by thermocompression bonding (casting method) is prepared by forming an adhesive insulating layer on a core film as an insulating layer prepared in advance, and laminating a conductive inorganic layer on the top and bottom and thermocompression bonding. As long as the layer structure of the final laminate is the same, such as the one that has been formed (film method) or the formation of an adhesive insulating layer on an insulating film and then the formation of a conductive inorganic layer by vapor deposition, sputtering, plating, etc. Regardless of its production method, it can be selected appropriately according to the required performance of the target product.
[0059]
When the target electronic component is an essential component that cannot be formed by plating, such as rolled copper foil or stainless steel, use a laminate made by a method of forming a conductive inorganic layer by thermocompression bonding. In the case where patterning of a very fine conductive inorganic layer having a wiring width of 1 μm or less is required, it is preferable to use a laminate in which the conductive inorganic layer is thinly formed by sputtering or plating.
[0060]
Although the thickness of the whole laminated body including a conductive inorganic substance layer is various according to the use to be used, the range of 5 micrometers-2000 micrometers is preferable. In particular, when all the conductive inorganic substances in the laminate are metals, a range of 5 μm to 1000 μm is preferable, and a range of 5 to 500 μm is particularly preferable.
[0061]
Dry film resist
In the dry film resist of the present invention, a substance whose solubility in a developer is changed by irradiation with ultraviolet rays (electromagnetic waves) is used. A dry film resist is a photosensitive resin composition that can be patterned in exposed and unexposed areas by irradiating ultraviolet rays (electromagnetic waves) through an exposure mask with a desired pattern. Say what. There are a positive type in which the exposed portion elutes in the developer and a negative type in which the unexposed portion elutes in the developer. Either one may be used in the present invention as long as the required physical properties described below are satisfied.
[0062]
The dry film resist in the present invention is preferably one that can be developed and peeled off with an aqueous solution, particularly a basic aqueous solution. However, the dry film resist is resistant to an etching solution and can retain the pattern shape while the insulating layer is wet etched. If it can do, it will not specifically limit. Examples of the basic aqueous solution that can be developed and peeled include the Sanfort series (trade name) manufactured by Asahi Kasei Kogyo Co., Ltd., the ALPHA series (trade name) manufactured by Nichigo-Moton, and the LAMINAR series (trade name). Also, a commercially available lactic acid solution developing / lactic acid solution peeling type dry film resist SFP-00GI-25AR (trade name: manufactured by Nippon Steel Chemical Co., Ltd.) can be used.
[0063]
In the wet etching of the insulating layer in the present invention, unevenness such as wiring of the conductive inorganic layer is often formed on the surface of the insulating layer. In that case, the thickness of the dry film resist used is the thickness of the conductive inorganic layer. It is desirable that it is 1.1-5 times. If it is less than 1.1 times, the convex portion of the substrate may break through the dry film resist and be exposed after the dry film resist is laminated, resulting in a defective etching shape. For the purpose of stabilizing the pattern shape and the purpose of resolving the fine pattern, the upper limit of the film thickness is preferably up to 5 times the thickness of the conductive inorganic layer on the insulating layer. In simple terms, a good pattern shape can be obtained if the film thickness of the dry film resist is in the range of 1.1 to 5 times the thickness of the conductive inorganic layer on the pattern forming side with the dry film resist. .
[0064]
Usually, the commercially available dry film resist has an aspect ratio of about 2 to 1, and it is more advantageous to thin the thin line for patterning. However, since there is the above problem, it is provided in the laminate. It must be thicker than the conductive inorganic layer.
[0065]
As a dry film resist laminating method, a known laminating method such as a roll press or a surface press can be used. However, the laminate used in the present invention has a maximum insulating layer thickness of 500 μm, preferably 300 μm. Since it is below, the rigidity of a board | substrate is low in the state which patterned the electroconductive inorganic substance layer in the desired shape. Therefore, when the laminate is laminated by a roll press, the substrate warps when processed for each sheet. When the substrate is warped, a large shift occurs in alignment when exposure is performed thereafter. Since this shift causes a shift between the pattern of the conductive inorganic layer and the pattern of the insulating layer, it must be made as small as possible. Therefore, when laminating a dry film resist on a substrate on a sheet, the use of a surface press is an essential requirement for producing a product as designed with high accuracy.
[0066]
Also, when laminating air bubbles when laminating a dry film resist on an etched conductive inorganic layer, for example, if there are bubbles in the conductive inorganic layer due to etching, the air bubbles When the is encapsulated, the part becomes poor adhesion, and the etching shape becomes defective. Since wet etching has an etching rate several tens of times higher than that of plasma etching, which is a dry process, if there is such an adhesion defect, it is easy to etch even a portion that is not normally etched, and the pattern defect is more extensive than the dry process. For this reason, in the present invention, this laminating step is performed under reduced pressure or vacuum, preferably 80 KPa (≈600 mmHg) or less, more preferably 40 KPa (≈300 mmHg) or less, and most preferably 6.7 KPa (≈50 mmHg) or less. It is desirable to remove bubbles by using vapor pressure.
[0067]
By the way, when a dry film resist having a smooth surface is used, about 20% or more of the surface of the substrate may become bubbles even if surface pressing is performed under reduced pressure. In such a case, if a dry film resist with fine irregularities on the surface is used and laminated so that the irregularities are directed to the substrate side, the fine irregularities become passages for bubbles to escape, and this phenomenon It does not occur and is very effective in removing bubbles.
[0068]
In other words, when laminating a dry film resist by a process for each sheet, in order to produce a product with good dimensional accuracy, surface pressing under reduced pressure and a dry film resist with irregularities on the surface are applied. It becomes a preferable aspect to use.
[0069]
The unevenness applied to the dry film resist surface preferably has a surface roughness Rz in the range of 0.5 μm to 50 μm, and the method for forming the unevenness is a dry film by applying or molding a photosensitive resin composition. After forming the resist, it may be embossed, or by applying a solution of the photosensitive resin composition to a film with unevenness in advance and drying it to obtain a dry film resist with unevenness formed. However, the method is not particularly limited.
[0070]
The conditions for laminating the dry film resist are as follows: temperature in the range of 20 to 100 ° C., 0.05 to 0.3 MPa (0.5 to 3 kgf / cm²) Is preferably carried out at a pressing pressure in the range. The atmosphere at that time is a reduced pressure or vacuum state, preferably 80 KPa (≈600 mmHg) or less, more preferably 40 KPa (≈300 mmHg) or less, and most preferably 6.7 KPa (≈50 mmHg) or less. Is desirable. The vacuum suction time is adjusted according to the sheet size of the laminate to be processed, but the time is set so that no bubbles remain between the dry film resist and the laminate sheet during pressure bonding. The laminating conditions vary depending on the Tg of the dry film resist to be used, and the laminating is performed at a temperature that can sufficiently cover the pattern of the conductive inorganic layer. At this time, it should be noted that if the temperature is too high, the sensitivity during exposure becomes unstable.
[0071]
The development and stripping of the dry film resist are preferably carried out under the recommended conditions using a developer or stripping solution corresponding to the dry film resist to be used, but are not particularly limited. As mentioned above, from the viewpoint of waste disposal, development with an aqueous solution, preferably a basic aqueous solution, particularly preferably an inorganic basic aqueous solution is desirable. The aqueous solution in the present invention may be a liquid containing water as a main component, and may contain less than 50% by weight of an organic solvent such as an aliphatic alcohol, an aromatic alcohol, or an organic polar solvent in accordance with development and peeling conditions. Good. The developing method may be a dip method, an air spray method, or a liquid spray method, and is not particularly limited.
[0072]
When dry film resist is used for polyimide wet etching, the etching solution contains a highly reactive component at a high concentration, so the dry film resist holds the pattern in other cases. It is difficult compared. In such a case, a dry film resist is laminated, and after exposure and development, the pattern is formed and heated, or in the case of a negative type dry film resist, again with ionizing radiation, preferably with ultraviolet rays. Then, the pattern of the dry film resist becomes strong, and the time for retaining the shape becomes long even when it comes into contact with the etching solution.
[0073]
The heating conditions are 30 ° C. to 200 ° C., preferably 70 ° C. to 150 ° C., and the treatment time is suitably 10 seconds to 20 minutes. Examples of the method include, but are not particularly limited to, a method of standing on a hot plate, a method of putting in an oven, a method of treating with hot air, and a method of using an infrared heater.
[0074]
In addition, when pattern retention is improved by irradiating ultraviolet rays (electromagnetic waves) after forming the resist pattern, it is preferable to irradiate with energy of 5 mJ or more at the same wavelength as that during pattern exposure.
[0075]
Etching solution
As the etching solution used in the present invention, various etching solutions as described in the section of the prior art can be used. However, the method of manufacturing an electronic component according to the present invention aims at high productivity, low process cost (equipment cost / maintenance management cost / waste disposal cost), and low toxicity. It is desirable that the liquid has low toxicity and long life. It is preferable that the highly toxic hydrazine is not included, but may be included as an additive so long as it is 10 wt% or less by weight with respect to the etching solution. If the amount of hydrazine exceeds 10%, the shape when etching is likely to become unstable, and the management of the process becomes difficult. This is because, as described in JP-A-5-301981, hydrazine has an unstable etching behavior, and a lower hydrazine content is preferable in terms of process management and working environment.
[0076]
The etching solution used in the present invention must have an etching rate sufficient to etch the polyimide within a time in which the dry film resist to be used can keep its shape. Specifically, basic aqueous solutions mainly composed of inorganic alkali disclosed in JP-A-10-97081 and JP-A-10-195214 are most preferable. The etching solution that can be used in the present invention basically includes urea or an organic polar solvent added to an aqueous solution of inorganic alkali, aliphatic amine (diamine), aliphatic alcohol, aliphatic amino alcohol alone or a mixture thereof. The pH is preferably greater than 9.
[0077]
The processing temperature in the etching may be a temperature range higher than the freezing point of the etching solution to be used or the temperature at which precipitation occurs and lower than the boiling point, but from the viewpoint of productivity and process control, 10 ° C to 120 ° C, Preferably they are 30 to 95 degreeC, More preferably, it is 50 to 90 degreeC. In the case of an etchant containing a component that volatilizes at the processing temperature, the composition of the etchant may change if the process is continued for a long time. Although it is preferable to carry out at the temperature which does not volatilize, it is not necessary to carry out at that temperature.
[0078]
The smaller the temperature distribution in the etching bath is, the better. However, it is preferably maintained within a range of ± 1 ° C., more preferably within a range of ± 0.5 ° C.
[0079]
From the knowledge so far, it has been confirmed that the higher the temperature, the higher the etching rate exponentially from the mechanism of polyimide wet etching. The higher the etching rate, the greater the difference in etching rate with respect to temperature. Therefore, if there is a temperature distribution in the etching bath, the variation in pattern accuracy within the substrate surface increases. This is particularly remarkable when the etching rate of the insulating layer is high, and reducing the temperature distribution as much as possible is effective in performing uniform processing.
[0080]
Etching methods include dip method, air spray method, submerged spray method, dip + ultrasonic irradiation method, etc., but in the case of air spray method, the content components from the etchant often volatilize, Management becomes difficult. The dipping method or the submerged spray method is preferable, and the submerged spray method is preferable in order to reduce the taper angle of the etching shape.
[0081]
In the case of irradiating ultrasonic waves in the etching solution, it is necessary to consider the ultrasonic conditions so that the dry film resist is partially peeled by the ultrasonic irradiation and the etching shape does not become defective.
[0082]
During the etching process of the stacked body, the process may be performed with the stacked body standing vertically or may be performed in a horizontal state. When the treatment is performed in a vertical position, the etching solution is sufficiently cut off when the sample is taken out from the etching bath after the etching is completed, and the loss of the etching solution is small. When the process is performed horizontally, it is possible to perform horizontal continuous conveyance, which is more suitable for mass productivity, and there is an advantage that the temperature distribution of the etching solution is reduced.
[0083]
If necessary, it is preferable to treat the surface of the laminate with a surfactant before the etching treatment to increase the affinity with the etching solution. When the etchant is mainly composed of an inorganic basic aqueous solution, the affinity with the surface of the insulating layer may not be good. In such a case, the entire laminate is etched uniformly, Treatment with an activator has an effect of improving affinity. The type of the surfactant for the purpose is not particularly limited, but when the treatment is continued in a large amount, the surfactant is gradually included in the etching solution. In such a case, when an ionic surfactant is used, a nonionic surfactant is preferable because it acts as a buffer and may deteriorate the etching solution.
[0084]
Moreover, you may perform the rinse process as needed after the process by etching liquid. If the rinsing treatment is not performed, the components of the etching solution and the etched insulating layer residue may remain on the substrate surface, which is not preferable. Examples of the rinsing liquid used for the rinsing treatment include, but are not limited to, a basic aqueous solution, a mixed solution of an organic polar solvent and water, a mixed solution of an organic polar solvent and alcohol, and water. The temperature of the rinsing process may be in the range of a temperature higher than the freezing point of the rinsing liquid to be used or the temperature at which precipitation occurs and lower than the boiling point. At this time, the rinsing process and the dry film resist peeling process may be performed at the same time by using the stripping solution in the dry film resist peeling process, which is a process after etching, as it is as a rinsing liquid.
[0085]
Examples of the organic polar solvent used in the rinse liquid include, but are not limited to, n-methyl-2-pyrrolidone (NMP), dimethylformamide, dimethylacetamide, and the like. The alcohol used in the rinsing liquid may be an aliphatic alcohol such as methanol, ethanol, propanol or the like, or an aromatic alcohol such as phenol or cresol, and may have a plurality of hydroxyl groups in one molecule such as diol. It may be a substance.
[0086]
Stripping dry film resist
For the removal of the dry film resist, the recommended conditions for removing the dry film resist to be used are used, but when the insulating layer used is poor in alkali resistance, an organic basic aqueous solution such as ethanolamine is preferably used. As a method for peeling the dry film resist, spray peeling of a chemical solution of a basic aqueous solution is usually used, but a dip method or ultrasonic irradiation may be used.
[0087]
In addition, it is often seen in laminates produced by hot pressing, but the surface of the conductive inorganic layer forming the laminate is roughened to improve adhesion, and the roughened surface is an insulating layer. When the film is transferred to the surface, the dry film resist is embedded in the roughened surface, so that it is necessary to make the conditions more severe than usual. The same applies to the case where the etching solution resistance improving process is performed.
[0088]
【Example】
Laminates that can be wet etched
[Etching test]
In order to produce a sample for forming an insulating layer, polyamic acid varnish manufactured by Mitsui Chemicals, Inc .: PAA-A (trade name), polyimide varnish manufactured by Shin Nippon Rika Co., Ltd .: EN-20 (trade name) are used as adhesive resins. ) Was prepared. As a low-expansion polyimide serving as a core, a polyimide film APIKAL NPI (trade name, thickness: 12.5 μm) manufactured by Kaneka Chemical Co., Ltd. was prepared. The etching liquid used for an etching test prepared Toray Engineering Co., Ltd. alkali-amine type polyimide etching liquid TPE-3000 (brand name).
[0089]
The adhesive resin varnish EN-20 (trade name) is coated on a SUS304 plate having a size of 15 cm × 15 cm with a film thickness of 100 μm by spin coating so as to have a film thickness of 20 μm to 40 μm, and dried in an oven at 180 ° C. for 30 minutes. did. Since PAA-A (trade name) is an amic acid varnish, the solvent was removed in a drying step at 120 ° C. for 15 minutes, and then a predetermined operation was performed to obtain a thermal imidized polyimide. Each dried product is cut into a length of about 1.5 cm and a width of about 2 cm, and the center is scratched with a cutter knife, and the film thickness is measured with a stylus-type film thickness meter Dektak 16000 (trade name, manufactured by Sloan Technology). The initial film thickness was measured. After that, it is immersed in a polyimide etching solution TPE-3000 (trade name, manufactured by Toray Engineering Co., Ltd.), which has been adjusted to 70 ° C. and stirred to such an extent that a vortex can be produced by a magnetic stirrer, and the initial film thickness is measured every time. Measure the film thickness at almost the same place with the stylus-type film thickness meter Dektak 16000 (trade name, manufactured by Sloan Technology), and subtract the film thickness after immersion from the initial film thickness. The amount. The amount of film reduction per minute was defined as an etching rate (unit: μm / min). The values are shown in Table 1 below.
[0090]
[Table 1]

[0091]
[Etching evaluation]
To an APIKAL NPI film (trade name, manufactured by Kaneka Chemical Co., Ltd.), a polyimide film having a thickness of 12.5 μm, EN-20 (trade name, new) so that the film thickness after drying becomes 1.5 μm ± 0.3 μm. Nippon Rika Co., Ltd. polyimide varnish) was applied on both sides and dried under the aforementioned drying conditions. The obtained film was named film A with an adhesive layer.
[0092]
Similarly, PAA-A (trade name, manufactured by Mitsui Chemicals, Inc.) is applied to both sides of an APIKAL NPI film (trade name, manufactured by Kaneka Chemical Co., Ltd.) having a thickness of 12.5 μm, and a film with an adhesive layer is formed. B. Table 2 below shows the ratio of the etching rates of the films A and B with the adhesive layer.
[0093]
[Table 2]

[0094]
  Between each of the films A and B with the adhesive layer, a 20 μm thick SUS304HTA foil (trade name, manufactured by Nippon Steel Corporation) and a 18 μm thick (Rz = 1.5 μm) Aurin copper alloy foil C7025 (trade name) 20kg / cm²Pressure and pressure bonding at 270 ° C. for 10 minutes, SUS: Insulating layer:Copper alloyTwo types of three-layer materials consisting of: The obtained laminate was designated as laminate A and laminate B.
[0095]
[Etching evaluation of insulating layer]
Each laminate A and B obtained in the above step was immersed in a ferric chloride solution with the SUS side masked, and the copper foil was etched. Then, after drying and cutting to an appropriate size, it was immersed in an etching solution TPE-3000 (trade name) manufactured by Toray Engineering Co., Ltd., which was stirred at 70 ° C. with a magnetic stirrer. When the polyimide film was removed cleanly and the SUS surface was exposed, it was taken out. The insulating layer was wet etched by such a method.
[0096]
Similarly, the pressure is 25-30 Pa, the process gas NF_Three/ O₂= 10/90%, plasma treatment was performed at a frequency of 40 kHz, and the insulating layer was plasma etched.
[0097]
Etching is performed until it can be confirmed that the polyimide layer does not remain on the SUS, and values obtained by dividing the film thickness of the insulating layer by the time required for this etching (etching rate) are shown in Table 3 below.
[0098]
[Table 3]

[0099]
According to Table 3, wet etching has a higher etching rate than plasma etching. It was confirmed that the insulating layer can be etched in a very short time.
[0100]
Platemaking evaluation
[Patterning of conductive inorganic layer]
A roll in which a basic aqueous solution development type dry film resist having a thickness of 50 μm is heated on both surfaces of the stainless steel layer of the laminate A and the copper alloy foil layer prepared in the etching evaluation test having a size of 300 mm × 300 mm. After laminating at a speed of 0.5 m / min with a laminator at a roll surface temperature of 105 ° C. and a linear pressure of 2 to 4 Kg / cm, the laminate was left at room temperature for 15 minutes. At this time, since there were a stainless steel layer and a copper alloy foil layer on both sides of the laminate, the laminate was flat even after laminating the dry film resist, and no warping was confirmed. Then, using a predetermined mask, 100 mJ / cm with a vacuum contact exposure machine²Exposed. After standing at room temperature for 15 minutes, Na₂CO_Three1 wt% aqueous solution, 30 ° C, spray pressure 2Kg / cm²The dry film resist was developed for 60 seconds to form a resist pattern.
[0101]
Thereafter, the stainless steel layer and the copper foil layer were simultaneously etched with a ferric chloride aqueous solution. After that, spraying pressure 1Kg / cm with 3wt% NaOH aqueous solution at 50 ℃²The dry film resist was peeled off, and the conductive inorganic layer of the laminate A was patterned. Thus, the laminated body A in which the stainless steel layer and the copper alloy layer were patterned and the insulating layer was partially exposed was obtained.
[0102]
[Selection of dry film resist]
The following operations were performed using the laminate A from which the insulating layer obtained in the above process was exposed. The laminate A was immersed in a ferric chloride solution with the SUS side masked, and the copper foil was etched. The above basic aqueous solution development type dry film resist is applied to the exposed adhesive layer surface in such a manner at a temperature of the roll surface of 105 ° C. at a rate of 0.5 m / min with a heated roll laminator at 2 to 4 kg / cm 2. After laminating at a linear pressure of 15 minutes, it was left at room temperature for 15 minutes. After that, with a parallel light contact exposure machine manufactured by ORC Manufacturing Co., Ltd., a stripe mask having a line and space of 500 μm / 500 μm and 80 μm / 80 μm is brought into close contact with the sample, and the recommended exposure amount of the dry film is single-sided exposure in the range of 30 to 200 mJ. Thereafter, the sample was turned upside down, and a similar mask was brought into close contact and exposed. After standing at room temperature for 15 minutes, Na₂CO_Three1 wt% aqueous solution, 30 ° C, spray pressure 2Kg / cm²The dry film resist was developed for 60 seconds. Thereafter, it was dried and immersed in an etching solution TPE-3000 (trade name) manufactured by Toray Engineering Co., Ltd., which was stirred at 70 ° C. with a magnetic stirrer. Samples with various immersion times were changed with a 3 wt% NaOH aqueous solution at 50 ° C. and a spray pressure of 1 kg / cm.²The dry film resist was peeled off. In that way, the insulating layer was wet etched into the desired shape. For dry film resist, Sunfort AQ-1558 (trade name), AQ-2058 (trade name), AQ-2538 (trade name), AQ-3038 (trade name), AQ-4038 (trade name) manufactured by Asahi Kasei Kogyo Co., Ltd. ), AQ-5038 (trade name), NPE 538 (trade name), NPE 342 (trade name) manufactured by Nichigo Morton, and SFP-00GI-25-AR (trade name) manufactured by Nippon Steel Chemical Co., Ltd. were used. However, the designated lactic acid aqueous solution was used for development of SFP-00GI-25-AR (trade name).
[0103]
For each sample, measure the dimensions of the top of the stripe pattern, and for the sake of convenience, the point where the change is abrupt is regarded as the time when the dry film resist pattern is peeled or dissolved, and the dry film resist holds the pattern shape until that time. It was time to be.
[0104]
The pattern retention time for each sample is shown in Table 4 below.
[0105]
[Table 4]

[0106]
According to Table 4, it was found that Sunfort AQ5038 (trade name) manufactured by Asahi Kasei Kogyo Co., Ltd. and NPE342 (trade name) manufactured by Nichigo Morton were relatively excellent in etching solution resistance. Further, Sunfort AQ2538 to AQ5038 (trade names) manufactured by Asahi Kasei Kogyo Co., Ltd. are only dry film resists having the same composition, and the thicknesses of the dry film resists increase as the sample number increases. According to Table 4, as the thickness increases, the pattern holding time increases. From this, it can be determined that the etching solution resistance is also improved.
[0107]
Pattern reinforcement processing
After patterning the dry film resist, the following post-treatment was performed in order to further impart resistance to the etchant of the dry film resist. The sample used was the laminate A from which the copper alloy foil was removed in the above process, and patterned with Asahi Kasei Kogyo Sunfort AQ5038 (trade name) into stripes of L / S = 500 μm / 500 μm and 80 μm / 80 μm. Used. The evaluation method was also evaluated by the same method as when selecting the dry film resist.
[Heat treatment]
An aluminum foil was laid on a hot plate heated to 120 ° C., and sample A was allowed to stand on the aluminum foil to obtain a pattern holding time. At this time, the time was changed as shown in the following table. The results of the pattern retention rate with respect to the processing time are shown in Table 5 below.
[0108]
[Table 5]

[0109]
[Post-exposure processing]
Since a negative dry film resist is used, it is necessary to further strengthen the resist pattern after development. Therefore, post-exposure was performed under the following conditions to determine the pattern holding time. The pattern retention with respect to the exposure amount is shown in Table 6 below.
[0110]
[Table 6]

[0111]
According to Tables 5 and 6, the effect of heating by pattern reinforcement treatment was greater, but the effect of post-exposure by post-exposure was not as good as heat treatment. These may be appropriately selected depending on the electronic component and process to be obtained. Even in these combinations, the effect was confirmed, but the contribution of the heat treatment effect was large, and the effect of exposure was not so conspicuous.
[0112]
Plate making of dry film resist for patterning insulation layers
[Dry film resist]
The following were prepared as a negative dry film resist of basic aqueous solution development / basic aqueous solution peeling type. Asahi Kasei Kogyo Co., Ltd. Sunfort AQ-1558 (trade name, thickness 15 μm), AQ-2058 (trade name, thickness 20 μm), AQ-2538 (trade name, thickness 25 μm), AQ-3038 (trade name, Thickness 30 μm), AQ-4038 (trade name, thickness 40 μm), AQ-5038 (trade name, thickness 50 μm), and Nichigo Morton Corporation ALPHHO NPE538 (trade name, thickness 38 μm, with embossing treatment), NPE342 (Thickness 42 μm, trade name, embossed).
[0113]
The sample was subjected to surface press (under reduced pressure and normal pressure) and roll press (under reduced pressure and normal pressure) by the following method to examine the appearance of the laminate A after dry film resist lamination.
[0114]
[Surface press]
Laminate A is sandwiched between dry film resists (DFR) and is laminated in the order of dry film-laminate-dry film on a hot plate with a set temperature of 75 ° C. using a vacuum laminator MVLP-500 manufactured by Meiki Seisakusho. After setting, the pressure in the chamber was reduced to 30 mmHg (≈4 KPa: about 1/25 of atmospheric pressure), and then pressed at a press pressure of 10 Pa for 80 seconds. In the same manner, an internal pressure during pressing was set to normal pressure.
[0115]
In the laminated body thus laminated, air bubbles were mixed in places at the ends where the copper alloy foil and the stainless steel foil were patterned in all samples under normal pressure. In addition, when pressed under reduced pressure, the dry film resist having fine irregularities on the surface by embossing had no air bubbles mixed in, but the one that was not embossed was copper alloy foil or Air bubbles were mixed in some places at the end where the stainless steel foil was patterned. However, all samples were flat and no warping was seen.
[0116]
[Roll press]
Laminate A was laminated with a roll laminator sandwiched between dry film resists and heated at a speed of 0.5 m / min at a roll surface temperature of 105 ° C. at a linear pressure of 2 to 4 Kg / cm, and then at room temperature for 15 minutes. I left it alone. Thus, when all the laminated bodies which laminated were left still on the flat metal plate, both ends floated about 1 cm-2 cm, and it was curving to the side by which the copper alloy foil was patterned. Moreover, there was no mixing of air bubbles in the case of laminating under reduced pressure. However, what was performed at normal pressure had air bubbles mixed in some places at the end where the copper alloy foil or stainless steel foil was patterned.
[0117]
In each sample, it was confirmed that the stainless steel foil (thickness 20 μm) and the copper alloy foil (thickness 18 μm) patterned from the surface of the dry film resist were not exposed. When the resist thickness was the same or small, the metal partially penetrated the dry film resist and was exposed. The evaluation results are shown in Table 7 below.
[0118]
[Table 7]

[0119]
[Exposure / Development]
The laminate A obtained by laminating the dry film resist obtained in the above process is covered with a mask pattern, and the exposure is 30 to 150 mJ / cm by i-line exposure.²At 30 ° C., 1 wt% Na₂CO_ThreeAnd spray developed. Thereby, the insulating layer processing resist pattern was formed so as to overlap with the stainless steel layer patterned on the insulating layer and the copper alloy foil layer.
[0120]
If the insulating layer processing pattern is formed only in the region where the insulating layer remains so as not to overlap, the resist pattern is also etched by wet etching, and a gap is formed between the pattern and the stainless steel layer or the copper alloy layer. Then, there is a possibility that the etching will enter and the insulating layer will not be processed. In order to prevent this, the insulating layer processing resist pattern was formed so as to overlap with the stainless steel layer or the copper alloy layer patterned on the insulating layer. In particular, when the line width of the stainless steel layer or the copper alloy layer is narrow, it is also effective in this respect to form the insulating layer processing resist pattern on the conductive layer having a narrow line width.
[0121]
At this time, the warped sample did not adhere to the mask at the time of exposure and was forced to adhere by suction. As a result, the alignment accuracy deteriorated by about 3 to 5 times that of the other samples.
[0122]
[Wet etching]
The sample obtained in the above process was wet etched under the following conditions. In addition, the etching liquid tolerance improvement process of the dry film resist was not performed. As wet etching conditions, as a pretreatment, it is immersed in a 0.5% aqueous solution of Surfynol 104E (trade name) manufactured by Nissin Chemical Industry, which is a nonionic surfactant, for 30 seconds, and then sprayed horizontally in the liquid. A mold etching apparatus was used. Etching solution TPE-3000 manufactured by Toray Engineering Co., Ltd. was used as the etching solution, and the processing temperature was 80 ° C. Although depending on the etching rate of the polyimide layer with respect to the etching solution and the etching temperature, the time required for etching of each sample was about 70 to 90 seconds.
[0123]
At that time, in the sample in which bubbles were mixed in the resist pattern, the stainless steel layer, and the sample in which the copper alloy foil layer was exposed, many portions where the target shape was not etched were observed. The cause of such defects is that the wet etching has a very high etching rate, and etching is performed even by touching the etching solution. Therefore, the dry film resist completely covers the etching pattern of the copper alloy foil layer. If not, it is likely to be defective.
[0124]
FIG. 2 shows an electron micrograph of a sample that has been successfully etched, and FIG. 3 shows an electron micrograph of a sample in which etching failure has occurred. According to FIG. 3, it can be seen that the peripheral polyimide insulating layer at the base of the etching pattern of the copper alloy foil is eroded. Such a defect is caused by the insulation at the base of the conductive inorganic layer 3 or 2 when the thickness of the dry film resist 5 is less than 1.1 times the thickness of the conductive inorganic layer 3 or 2 in FIG. Occurs around layer 1.
[0125]
[Post-wet etching treatment]
A sample obtained by laminating Asahi Kasei Kogyo Co., Ltd. Sunfort AQ5038 (trade name) on the laminate A and taking out the wet etching of the insulating layer was taken out of the etching bath and filled with a rinse bath having the following composition. The sample was immersed in the bat for 30 seconds and rinsed by a technique of swinging the bat. If the rinsing process is not performed, the etched polyimide residue, the etchant, etc. remain on the surface and impair the appearance. At this time, the rinsing and dry film peeling step may be performed simultaneously using the stripping solution in the dry film resist peeling step as it is.
The term “without rinsing” in Table 8 below refers to the case where the sample is left after being taken out from the etching solution.
[0126]
[Table 8]

[0127]
[Peeling]
The dry film resist was peeled from the laminate by spraying a hot basic aqueous solution of 50 ° C. and 3 Wt% sodium hydroxide on the dry film resist used for patterning the insulating layer. When the insulating layer has poor alkali resistance such as polyimide, an organic basic aqueous solution such as ethanolamine is preferably used.
[0128]
[Pickling, rust prevention, gold plating, solder printing]
The patterned copper alloy foil layer of the HDD wireless suspension blank formed by the above method was subjected to gold plating as a finishing work. The gold plating is performed using a high-purity chemical cyan gold plating bath: Temperesist EX (trade name) at 65 ° C. and a current density Dk = 0.4 A / dm.²Was applied for about 4 minutes to form a film having a thickness of 1 μm.
[0129]
When each performance of the sample produced as described above was evaluated, the sample that was warped in the state of laminating the dry film resist had poor alignment accuracy, was mixed with bubbles, and was patterned. In the case where the stainless steel foil or the copper alloy foil was exposed from the dry film resist, an etching shape defect was observed. The results are shown in Table 9 below.
[0130]
[Table 9]

[0131]
【The invention's effect】
According to the present invention, since the conductive inorganic layer is patterned by wet etching and subsequently the insulating layer is patterned by wet etching, etching can be performed in a shorter time and productivity is better than dry etching. In particular, products such as hard disk drive suspensions, where the area of the insulating layer removed by etching is large and fine patterns are required, are extremely effective in applying wet etching. Therefore, it is a manufacturing method with good workability and few defects.
[0132]
In addition, high-precision patterning is required for electronic components such as hard disk drive suspensions, but a liquid resist is applied to a non-rigid substrate for producing hard disk drive suspensions and the like, so that the resist film is accurate. Although it is difficult to achieve a uniform thickness, it requires very strict management in the coating and drying process, and is not suitable for fine etching. In the present invention, a dry film resist is used for patterning the insulating layer. Therefore, the use of a dry film having a constant film thickness has the advantage that process management is easy to form a resist and that it is suitable for fine etching.
[0133]
When manufacturing an electronic component of the present invention using a dry film resist having fine irregularities formed on the surface during wet etching, the fine irregularities create a space for air bubbles and laminate the dry film resist. Even so, it is possible to prevent entrapment of bubbles, and thus the etching resistance of the laminate is improved.
[0134]
In the method of manufacturing an electronic component according to the present invention, since a laminate of a dry film resist can be developed with a basic aqueous solution and stripped with a basic aqueous solution, the manufacturing equipment is inexpensive and can be disposed of. There is an advantage of not using a problematic organic solvent.
[0135]
In the method for manufacturing an electronic component according to the present invention, when a dry film is laminated under reduced pressure by a vacuum press on a laminate in which a conductive inorganic layer is patterned, warpage after lamination even in lamination for each sheet unit. And the inclusion of bubbles can be prevented.
[0136]
In the method for producing an electronic component of the present invention, after the dry film resist laminate is exposed, developed and patterned, an ultraviolet irradiation treatment, a heat treatment, and a treatment selected from a combination of the ultraviolet irradiation treatment and the heat treatment are performed. In this case, the resistance of the dry film resist to the etchant of the insulating layer can be improved.
[0137]
When the time required for wet etching of the insulating layer is 10 seconds or more and 30 minutes or less, preferably 10 seconds or more and 15 minutes or less, more preferably 10 seconds or more and 5 minutes or less, etching is performed with an etching solution of a strongly basic aqueous solution. However, the dry film resist does not peel at the time of etching, and accurate wet etching can be performed.
[0138]
When a dry film resist having a thickness 1.1 to 5 times as thick as the unevenness on the surface of the laminate is used, the convex portions of the laminate may be exposed through the dry film resist after laminating the dry film resist. And a good etching pattern shape can be obtained.
[Brief description of the drawings]
FIG. 1 is a process showing a method of manufacturing an electronic component by wet etching using a laminate in which a copper conductive inorganic layer is formed on one side of a polyimide insulating layer and a SUS conductive inorganic layer is formed on the other side as a starting material. FIG.
FIG. 2 is an electron micrograph of a sample that has been successfully etched.
FIG. 3 is an electron micrograph of a sample in which a copper alloy foil is exposed and etching failure occurs.
[Explanation of symbols]
1 Insulating layer
2, 3 Conductive inorganic layer
4, 5 Dry film resist

Claims (16)

Patterning the conductive inorganic layer by wet etching and then patterning the insulating layer by wet etching of the conductive inorganic layer-insulating layer-conductive inorganic layer laminate or the conductive inorganic layer-insulating layer laminate An electronic component manufacturing method comprising:
The insulating layer in the laminate can be wet-etched, has a single layer structure or a laminated structure of two or more insulating unit layers, and all layers are polyimide resins.
In the patterning of the insulating layer by the wet etching, a dry film resist is laminated under a reduced pressure on the laminate obtained by patterning the conductive inorganic layer, and the resulting dry film resist laminate is wet-etched. By the method,
The dry film resist has fine irregularities formed on the surface, and the fine irregularities are provided by embossing,
The dry film resist is developed with a basic aqueous solution and can be peeled off with a basic aqueous solution .
The dry film resist laminate is wet-etched by exposing, developing and patterning the dry film resist laminate, followed by ultraviolet irradiation as a treatment to improve the resistance of the dry film resist to the etchant of the insulating layer. A method for manufacturing an electronic component, comprising performing a process, a heat process, and a process selected from a combination of an ultraviolet irradiation process and a heat process . 2. The method of manufacturing an electronic component according to claim 1, wherein the insulating layer of the laminate as a raw material has a thickness of 3 [mu] m to 500 [mu] m. 3. The method of manufacturing an electronic component according to claim 1, wherein a thickness of the dry film resist is 1.1 to 5 times a thickness of one conductive inorganic layer of a laminate as a raw material. A method for manufacturing an electronic component . 4. The method of manufacturing an electronic component according to claim 1, wherein a time required for wet etching of the insulating layer is 10 seconds or more and 30 minutes or less. 5. 5. The method of manufacturing an electronic component according to claim 1, wherein a temperature during wet etching of the insulating layer is 10 ° C. or higher and 120 ° C. or lower. The electronic component manufacturing method according to any one of claims 1 to 5, wherein at least one of the single layer structure or the two or more insulating unit layers in the insulating layer is a low expansion polyimide having a linear thermal expansion coefficient of 30 ppm or less. Method. The method for manufacturing an electronic component according to claim 6, wherein the insulating layer has a layer structure made of adhesive polyimide-low expansion polyimide-adhesive polyimide. The method for manufacturing an electronic component according to claim 7, wherein the two adhesive polyimides are polyimides having different compositions in the insulating layer having a layer structure of adhesive polyimide-low expansion polyimide-adhesive polyimide. 9. The method of manufacturing an electronic component according to claim 1, wherein the pH of the etching solution used for etching the insulating layer is greater than 9. 10. The method of manufacturing an electronic component according to claim 1, wherein the one or two conductive inorganic layers in the laminate are all copper or a material obtained by subjecting copper to a surface treatment. . 10. The electronic component according to claim 1, wherein the one or two conductive inorganic layers in the laminate are all made of a copper alloy or a material obtained by subjecting a copper alloy to surface treatment. 11. Production method. 10. The method of manufacturing an electronic component according to claim 1, wherein the one or two conductive inorganic layers in the laminate are all made of stainless steel or a material obtained by subjecting stainless steel to surface treatment. . The two conductive inorganic layers in the laminate are one layer of stainless steel or a material obtained by subjecting stainless steel to surface treatment, and the other layer is a copper alloy or a material obtained by subjecting copper alloy to a surface treatment. Item 10. The method for manufacturing an electronic component according to any one of Items 1 to 9. 2. The two conductive inorganic layers in the laminate are one layer made of stainless steel or a material obtained by subjecting stainless steel to surface treatment, and the other layer is made of copper or a material obtained by subjecting copper to surface treatment. The manufacturing method of the electronic component in any one of thru | or 9. The electronic component produced by the manufacturing method of the electronic component in any one of Claims 1 thru | or 14. A suspension for a hard disk drive manufactured by the method for manufacturing an electronic component according to any one of claims 1 to 14.

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