JP5041903B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP5041903B2
JP5041903B2 JP2007192870A JP2007192870A JP5041903B2 JP 5041903 B2 JP5041903 B2 JP 5041903B2 JP 2007192870 A JP2007192870 A JP 2007192870A JP 2007192870 A JP2007192870 A JP 2007192870A JP 5041903 B2 JP5041903 B2 JP 5041903B2
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JP
Japan
Prior art keywords
layer
electrode layer
semiconductor
insulating layer
substrate
Prior art date
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Expired - Fee Related
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JP2007192870A
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English (en)
Japanese (ja)
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JP2008053700A (ja
JP2008053700A5 (enExample
Inventor
舜平 山崎
幸一郎 田中
博信 小路
郁子 川俣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007192870A priority Critical patent/JP5041903B2/ja
Publication of JP2008053700A publication Critical patent/JP2008053700A/ja
Publication of JP2008053700A5 publication Critical patent/JP2008053700A5/ja
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Publication of JP5041903B2 publication Critical patent/JP5041903B2/ja
Expired - Fee Related legal-status Critical Current
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2007192870A 2006-07-28 2007-07-25 表示装置の作製方法 Expired - Fee Related JP5041903B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007192870A JP5041903B2 (ja) 2006-07-28 2007-07-25 表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006205711 2006-07-28
JP2006205711 2006-07-28
JP2007192870A JP5041903B2 (ja) 2006-07-28 2007-07-25 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008053700A JP2008053700A (ja) 2008-03-06
JP2008053700A5 JP2008053700A5 (enExample) 2010-08-26
JP5041903B2 true JP5041903B2 (ja) 2012-10-03

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ID=39237396

Family Applications (1)

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JP2007192870A Expired - Fee Related JP5041903B2 (ja) 2006-07-28 2007-07-25 表示装置の作製方法

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JP (1) JP5041903B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5216716B2 (ja) * 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
KR101213491B1 (ko) 2009-11-27 2012-12-20 삼성디스플레이 주식회사 유기 발광 표시 장치 제조 방법 및 유기 발광 표시 장치용 표면 처리 장치
JP2010161084A (ja) * 2010-04-02 2010-07-22 Casio Computer Co Ltd 表示装置及び表示装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302603A (ja) * 1993-03-26 1994-10-28 Hitachi Ltd Ｉｃ素子
JPH11251433A (ja) * 1998-03-06 1999-09-17 Rohm Co Ltd 半導体装置およびその製法
JP2001168061A (ja) * 1999-09-27 2001-06-22 Toshiba Corp レーザ照射により半導体基板上に成膜を形成するためのターゲット及びその製造方法
JP2004031933A (ja) * 2002-05-09 2004-01-29 Konica Minolta Holdings Inc 有機薄膜トランジスタの製造方法及び、それにより製造された有機薄膜トランジスタと有機薄膜トランジスタシート
JP2005085799A (ja) * 2003-09-04 2005-03-31 Seiko Epson Corp 成膜方法、配線パターンの形成方法、半導体装置の製造方法、電気光学装置、及び電子機器
JP4801407B2 (ja) * 2004-09-30 2011-10-26 株式会社半導体エネルギー研究所 表示装置の作製方法
KR101074389B1 (ko) * 2004-11-05 2011-10-17 엘지디스플레이 주식회사 박막 식각 방법 및 이를 이용한 액정표시장치의 제조방법

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JP2008053700A (ja) 2008-03-06

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