JP5034215B2 - Solid-state imaging device having function of generating focus detection signal - Google Patents

Description

  The present invention relates to a solid-state imaging device having both an image signal generation function and a focus detection signal generation function.

Conventionally, a pupil division phase difference method is known as one of focus detection techniques. This method forms a pair of divided images by dividing the luminous flux passing through the photographing lens into pupils. The defocus amount of the photographing lens is detected by detecting the pattern shift between the pair of divided images.
Patent Documents 1 and 2 are known as solid-state imaging devices to which the principle of the pupil division phase difference method is applied.

  In Patent Document 1, two photoelectric conversion areas are provided in pairs for all imaging pixels. An image signal is generated by adding and reading the paired photoelectric conversion area signals. Further, a focus detection signal is generated by separately reading out signals in a pair of photoelectric conversion regions.

In Patent Document 2, a part of the array of imaging pixels is assigned to the focus detection pixels. This focus detection pixel is provided with two photoelectric conversion areas, and generates a focus detection signal. In Patent Document 2, in order to increase the signal level of the focus detection signal, the color filter is omitted only for the focus detection pixels.
Japanese Patent Laid-Open No. 2002-314062 (FIGS. 1 and 2) Japanese Patent Laid-Open No. 2003-244712 (FIG. 2 etc.)

In the prior art described above, two photoelectric conversion areas must be provided in a space for one pixel. Therefore, in a high-resolution solid-state imaging device, two photoelectric conversion areas are provided in a small pixel space, and the light receiving efficiency of the photoelectric conversion area is lowered.
For these reasons, the conventional solid-state imaging device has a problem that the signal level of the focus detection signal is small and it is difficult to improve the focus detection accuracy.
Therefore, an object of the present invention is to provide a solid-state imaging device capable of increasing the signal level of a focus detection signal.

The solid-state imaging device according to the present invention is provided in a plurality on the imaging surface, and is a circular group disposed on the front surface of each of the imaging pixels and a group of imaging pixels that photoelectrically convert the received light beam in pixel units to generate an image signal. a microlens, provided in the group of image sensing pixels has a rectangular section of a size corresponding to a plurality of image pickup pixels in one array direction of a group of imaging pixels, the light-receiving compartment unit A plurality of focus detection pixels for generating a focus detection signal by photoelectrically converting a light beam by pupil division and an elliptical microlens arranged in front of each focus detection pixel. Further, the focus detection pixels, a position shifted in the minor axis direction from the center of the ellipse of the microlens of the compartments, further comprising a rectangular photoelectric conversion area having a size that spans a plurality of imaging pixels, A pair of focus detection pixels having different shifting directions of the photoelectric conversion regions are adjacent to each other in the other arrangement direction.

In Patent Documents 1 and 2 described above, there has been no idea of changing the pixel size depending on the use such as imaging / focus detection. For this reason, the signal level of the focus detection signal has decreased as the pixel size has become finer due to higher resolution.
The inventor of the present application pays attention to this point and makes the pixel size used for focus detection larger than the imaging pixel. This makes it possible to ensure a large signal level of the focus detection pixels even if the imaging pixels are miniaturized.
As a result, it is possible to simultaneously solve the conflicting problems of increasing the resolution of the captured image and improving the focus detection accuracy. In addition, it is possible to construct a camera system capable of detecting a focus even in a low illumination environment.

<< First Embodiment >>
[Description of pixel layout]
FIG. 1 is a diagram illustrating a focus detection area (arrangement area of focus detection pixels 13) of the solid-state imaging device 11. Such focus detection areas are provided at a plurality of locations on the imaging surface.
Hereinafter, the pixel configuration of the solid-state imaging device 11 will be described with reference to FIG. First, a group of imaging pixels 12 is arranged on the imaging surface of the solid-state imaging device 11. Each imaging pixel 12 is provided with a microlens 12c that collects the received light beam in units of pixels and a photoelectric conversion region 12e that photoelectrically converts the collected received light beam. A subject image is projected onto the imaging surface via a photographing lens (not shown). The group of imaging pixels 12 generates an image signal by photoelectrically converting the subject image in units of pixels.

On the other hand, in the focus detection area, the focus detection pixels 13 are arranged so as to sew between the groups of the imaging pixels 12. One focus detection pixel 13 occupies a plurality of sections of the imaging pixel 12 (for example, 2 × 2 pixels of the imaging pixel 12).
The focus detection pixel 13 is provided with a microlens 13c larger than the microlens 12c so as to cover the large section. A pair of photoelectric conversion areas 13a and 13b are arranged side by side so as to be within the light condensing range of the microlens 13c. The photoelectric conversion areas 13 a and 13 b are both rectangular and have a size in which the long side direction extends over the plurality of imaging pixels 12.

With this arrangement, the photoelectric conversion regions 13a and 13b receive light beams (pupil-divided light beams) that pass through different positions of the exit pupil of the photographing lens among the light beams that pass through the microlens 13c.
For example, the photoelectric conversion areas 13a and 13b arranged in the horizontal direction of the imaging surface respectively receive pupil-divided light beams obtained by dividing the exit pupil in the horizontal direction.
Further, for example, in the photoelectric conversion areas 13a and 13b arranged in the vertical direction of the imaging surface, the pupil-divided light beams obtained by dividing the exit pupil in the vertical direction are received.

Further, in the photoelectric conversion areas 13a and 13b arranged in the oblique direction of the imaging surface, the pupil division light beams obtained by dividing the exit pupil in the oblique direction are received.
On the imaging surface, these focus detection pixels 13 are arranged at predetermined pitches so as to be aligned in the pupil division direction. In FIG. 1, the focus detection pixels 13 are staggered so that the focus detection pixels 13 are not simply aligned.

[Circuit explanation]
FIG. 2 is a diagram illustrating a semiconductor pattern of the solid-state imaging device 11.
FIG. 3 is a diagram illustrating an equivalent circuit of the solid-state imaging device 11.
The solid-state imaging device 11 is generally configured by a vertical transfer circuit 3, a horizontal transfer circuit 4, a correlated double sampling circuit 5, and a pixel readout circuit. Among these, one pixel readout circuit is provided for each of the photoelectric conversion regions 12e, 13a, and 13b.

Hereinafter, the configuration of the pixel readout circuit will be described.
A floating diffusion FD is provided in the reading circuit. Next to the floating diffusion FD, a reset drain 38 is disposed via the gate 34 of the reset transistor QR. A transfer gate 33 of the transfer transistor QT is disposed between the floating diffusion FD and the photoelectric conversion areas 12e, 13a, and 13b. Such a voltage of the floating diffusion FD is applied to the gate 35 of the amplifying element QA through the wiring. The source 39 of the amplifying element QA is connected to the vertical readout line 2 by turning on the gate 36 of the row selection transistor QS.

[Description of read operation of focus detection signal]
FIG. 4 is a timing chart for explaining the reading operation of the solid-state imaging device 11.
The focus detection signal readout operation will be described below with reference to FIGS.
First, the vertical transfer circuit 3 sets the control signal φL (n) to a high level during the period T1, thereby selectively turning on the row selection transistor QS of the nth row in which the focus detection pixels 13 are present. .

During such row selection, the vertical transfer circuit 3 makes the n-th row reset transistor QR conductive for the period T2 using the control signal φRS (n). By this conduction, unnecessary charges of the floating diffusion FD in the nth row are discharged to the reset drain 38 and reset.
After the period T2, when the reset transistor QR changes to non-conduction, the floating diffusion FD returns to the floating state and holds the instantaneous voltage (reset voltage). The reset voltage in the n-th row is output as a source follower to the vertical readout line 2 via the amplifying element QA.

As described above, the reset voltage of the nth row is output from the vertical read line 2 in units of columns. These reset voltages are held in the correlated double sampling circuit 5 (capacitor group in the circuit 5) in synchronization with the falling timing of the control signal φSH (at the end of the period T3).
Next, the vertical transfer circuit 3 uses the control signal φTG (n) to make the transfer transistor QT in the n-th row conductive for the period T4. By this conduction, the signal charge is transferred to the floating diffusion FD, and the voltage of the floating diffusion FD changes from the reset voltage to the signal voltage. The signal voltage of the nth row is output as a source follower to the vertical readout line 2 via the amplifying element QA.

Thus, the n-th row signal voltage output in units of columns via the vertical readout line 2 is applied to the correlated double sampling circuit 5. The correlated double sampling circuit 5 outputs a true signal voltage corresponding to the difference between the signal voltage and the reset voltage.
In this state, the horizontal transfer circuit 4 sequentially reads the true signal voltages of the photoelectric conversion areas 13a and 13b from Vout using the control signals φH1 and φH2 of the column in which the focus detection pixels 13 are present.
By repeating the above operation for each focus detection pixel 13, the focus detection signal can be read out in a short time without reading out all the pixels.

[About the principle of focus detection]
Here, the principle of focus detection using the above-described focus detection signal will be described.
First, the received light beam that reaches one focus detection pixel 13 is a light beam that has passed through the exit pupil of the photographing lens. The received light beam in pixel units is divided into a pair of photoelectric conversion areas 13 a and 13 b arranged in the focus detection pixel 13 and subjected to photoelectric conversion. As a result, the pair of photoelectric conversion areas 13a and 13b photoelectrically convert light beams (pupil divided light beams) that have passed through different positions of the exit pupil of the photographing lens. In addition, by disposing the photoelectric conversion regions 13a and 13b at positions where the condensing center of the microlens 13c is removed, it is possible to efficiently divide the received light beam in pixel units into pupils.

  By the way, the light beam emitted from one point (including the close point) of the in-focus subject passes through different positions of the exit pupil of the photographing lens and then converges again to form a point image on the imaging surface. For this reason, in the in-focus state, the pair of photoelectric conversion areas 13a and 13b receive the pupil-divided light beams emitted from the same point on the subject. Therefore, the image pattern obtained from the plurality of photoelectric conversion areas 13a and the image pattern obtained from the plurality of photoelectric conversion areas 13b have substantially the same phase and show substantially zero phase difference.

On the other hand, the luminous flux emitted from the subject in the front pin state passes through different portions of the exit pupil of the photographing lens, and then reaches a pixel position that intersects and deviates in front of the imaging surface. In this case, the image pattern on the photoelectric conversion area 13a side and the image pattern on the photoelectric conversion area 13b side are shifted in the pupil division direction.
Conversely, the light beam emitted from the rear-pinned subject passes through different locations of the exit pupil of the photographic lens, and then reaches a shifted pixel position on the imaging surface with insufficient focusing. In this case, the image pattern on the photoelectric conversion area 13a side and the image pattern on the photoelectric conversion area 13b side are shifted in the opposite direction to the front pin state.
As described above, the phase difference between the image patterns changes depending on the focusing state of the taking lens. Therefore, by obtaining both image patterns from the focus detection signal and detecting an image shift (phase difference) by pattern matching or the like, it is possible to detect the in-focus state and the defocus amount of the photographing lens.

[Image signal readout operation]
The image signal for one screen can be read by sequentially repeating the above-described reading procedure of the focus detection signal for each imaging pixel 12.
It should be noted that image signals are missing at the locations where the focus detection pixels 13 are arranged. This missing image signal can be interpolated using surrounding image signals. Further, the image signal of the missing portion may be generated based on the signals in the photoelectric conversion areas 13a and 13b of the focus detection pixel 13.

[Effects of First Embodiment]
In the first embodiment, the size of the focus detection pixel 13 is larger than the size of the imaging pixel 12. For this reason, the light receiving efficiency of the focus detection pixel 13 is high, and the signal level of the focus detection signal increases. As a result, it is possible to improve the accuracy of focus detection.

  Further, the size of the microlens 13c is also increased in accordance with the focus detection pixel 13 having a large size. Accordingly, the light receiving efficiency of the focus detection pixel 13 is increased, and the signal level of the focus detection signal is further increased. As a result, a solid-state imaging device capable of focus detection even in an environment with low illuminance is realized.

  Further, the size of the focus detection pixel 13 is made to match the size of a plurality of the imaging pixels 12. Therefore, even if the focus detection pixels 13 are arranged between the groups of the imaging pixels 12, no useless gap is generated, and the loss of received light amount is small.

  In addition, a plurality of focus detection pixels 13 are staggered on the imaging surface. In this staggered arrangement, the imaging pixels 12 always exist on the top, bottom, left, and right of the individual focus detection pixels 13. For this reason, it is possible to interpolate an image signal lost by the focus detection pixel 13 with high quality using the surrounding imaging pixels 12.

  Furthermore, in the first embodiment, the microlens 13c has an isotropic shape. This facilitates the design and manufacture of the microlens 13c.

  In addition, in the photoelectric conversion regions 13a and 13b arranged in the row direction, the photoelectric conversion periods can be made to coincide with each other even though the size is increased in the column direction. Therefore, in the photoelectric conversion areas 13a and 13b arranged in the row direction, it is possible to perform pupil division without time difference, and the degree of coincidence of the pupil divided images is not impaired even for a moving subject. As a result, accurate and reliable focus detection is possible.

<< Second Embodiment >>
FIG. 5 is a diagram illustrating a focus detection area (arrangement area of the focus detection pixels 43 and 53) of the solid-state imaging device 41.
A feature of the second embodiment is that, instead of the focus detection pixels 13 of the first embodiment, focus detection pixels 43 and 53 that occupy a section corresponding to (2 × 1) image pickup pixels 12 are provided. It is a point.
In the section of the focus detection pixel 43, one elliptical micro lens 43c and one photoelectric conversion region 43b are provided. The photoelectric conversion region 43b has a rectangular shape extending over a plurality of the imaging pixels 12, and is arranged so as to be shifted in the minor axis direction from the center of the microlens 43c.
On the other hand, one oval microlens 53c and one photoelectric conversion area 53a are provided in the section of the focus detection pixel 53. The photoelectric conversion area 53a has a rectangular shape extending over a plurality of the imaging pixels 12, and is shifted from the center of the microlens 53c in the minor axis direction.
In this way, in the adjacent focus detection pixels 43 and 53, by reversing the shifting direction of the photoelectric conversion areas 43b and 53a, a set of pupil-divided light beams is received using the focus detection pixels 43 and 53. Is possible.
Note that the reading operation of the image signal and the focus detection signal is the same as that in the first embodiment, and thus the description of the operation is omitted here.

[Effects of Second Embodiment, etc.]
Also in the second embodiment, the same effect as in the first embodiment can be obtained.
Further, in the second embodiment, microlenses 43c and 53c are provided exclusively for the photoelectric conversion regions 43b and 53a. Therefore, it is possible to provide microlenses 43c and 53c having a more appropriate shape.

  In particular, in the second embodiment, the photoelectric conversion areas 43b and 53a are shifted in the short axis direction of the micro lenses 43c and 53c. In this case, in the major axis direction orthogonal to the pupil division direction (short axis direction), the dimensions of the photoelectric conversion regions 43b and 53a can be increased without significantly degrading the pupil division performance. Therefore, it is possible to further increase the signal level of the focus detection signal by increasing the light receiving efficiency in the long axis direction.

  Further, in the photoelectric conversion regions 43b and 53a arranged in the row direction, the photoelectric conversion periods can be made to coincide with each other even though the size is increased in the column direction. Therefore, in the photoelectric conversion areas 43b and 53a arranged in the row direction, pupil division can be performed without time difference, and the degree of coincidence of the pupil division images is not impaired even for a moving subject. As a result, accurate and reliable focus detection is possible.

<< Third Embodiment >>
FIG. 6 is a diagram illustrating a focus detection area (arrangement area of the focus detection pixels 43 and 53) of the solid-state imaging device 51. A feature of the third embodiment is that the pair of focus detection pixels 43 and 53 are arranged at an oblique position. Since other configurations are the same as those of the second embodiment, description thereof is omitted here.
FIG. 7 shows an example in which the array width of the focus detection pixels 43 and 53 is increased.
By increasing the array width, the number of samples of the focus detection signal can be increased. As a result, it is possible to perform processing such as averaging the results of focus detection, thereby further improving the focus detection accuracy.

[Effects of Third Embodiment]
Also in the third embodiment, the same effect as in the second embodiment can be obtained.
Furthermore, in the third embodiment, as shown in FIG. 6, the pair of focus detection pixels 43 and 53 are arranged obliquely, so that the imaging pixels are arranged above, below, left and right of the individual focus detection pixels 43 and 53. 12 must exist. As a result, it is possible to interpolate the image signal lost by the focus detection pixels 43 and 53 with high quality using the surrounding imaging pixels 12.

<< 4th Embodiment >>
FIG. 8 is a diagram illustrating a pixel array according to the fourth embodiment. A feature of the fourth embodiment is that the pair of focus detection pixels 43 and 53 are arranged side by side in a direction (vertical direction in FIG. 8) orthogonal to the pupil division direction. Since other configurations are the same as those of the second embodiment, description thereof is omitted here.

[Effects of Fourth Embodiment, etc.]
Also in the fourth embodiment, the same effect as in the second embodiment can be obtained.
Further, in the fourth embodiment, the distance in the pupil division direction between the pair of focus detection pixels 43 and 53 is substantially zero. Therefore, it can be more accurately determined whether or not the image pattern obtained on the focus detection pixel 43 side matches the image pattern obtained on the focus detection pixel 53 side. Therefore, a more precise focus determination can be performed.

<< 5th Embodiment >>
FIG. 9 is a diagram illustrating a focus detection area (arrangement area of focus detection pixels 73 and 83) of the solid-state imaging device 71. A feature of the fifth embodiment is that the micro lenses 73c and 83c of the focus detection pixels 73 and 83 are elongated in the pupil division direction. The photoelectric conversion areas 73a and 83b are reduced to a size that can be accommodated in the minor axis direction of the microlenses 73c and 83c.
The focus detection pixels 73 and 83 are staggered so as to be aligned in the pupil division direction.
Since other configurations are the same as those of the third embodiment, description thereof is omitted here.

[Effects of Fifth Embodiment, etc.]
Also in the fifth embodiment, the same effect as in the third embodiment can be obtained.
Furthermore, in the fifth embodiment, the micro lenses 73c and 83c are elongated in the pupil division direction. Therefore, in the pupil division direction, the edge of the microlens becomes far and the influence of the diffraction phenomenon is reduced. Therefore, the disturbance of the light beam in the pupil division direction is reduced, and the received light beam can be more precisely divided into pupils. As a result, it is possible to improve the accuracy of focus detection.

<< Additional items of embodiment >>
In the embodiment described above, a color image signal may be generated by disposing a color filter in the imaging pixel. For the focus detection pixels, it is preferable to increase the light receiving efficiency by omitting the color filter.

  In the embodiment described above, focus detection pixels are arranged only in a predetermined focus detection area. However, the embodiment is not limited to this. For example, focus detection pixels may be arranged at a predetermined pitch over the entire imaging surface. With this configuration, a desired region can be flexibly selected, and a focus detection signal can be read from the region.

  In the first embodiment described above, two photoelectric conversion areas 13 a and 13 b are provided in the section of the focus detection pixel 13. However, the embodiment is not limited to this. Two or more (for example, four, etc.) photoelectric conversion regions may be arranged in the focus detection pixel section. By classifying these photoelectric conversion areas into two directions as appropriate and combining them, the pupil division direction of the focus detection pixels can be variously changed.

  Furthermore, in the fifth embodiment described above, one photoelectric conversion area is arranged for one microlens. However, the embodiment is not limited to this. A plurality of photoelectric conversion regions may be arranged side by side in the long axis direction of the microlens.

  As described above, the present invention is a technique that can be used for a solid-state imaging device having a function of generating a focus detection signal.

It is a figure which shows the arrangement | positioning area of the pixel 13 for focus detection. 2 is a diagram showing a semiconductor pattern of the solid-state imaging device 11. FIG. 2 is a diagram illustrating an equivalent circuit of the solid-state imaging device 11. FIG. 3 is a timing chart for explaining a reading operation of the solid-state imaging device 11. It is a figure which shows the arrangement | positioning area of the pixels 43 and 53 for focus detection. It is a figure which shows the arrangement | positioning area of the pixels 43 and 53 for focus detection. This is an example of a modification in which the array width of the focus detection pixels 43 and 53 is widened. It is a figure which shows the pixel arrangement of 4th Embodiment. It is a figure which shows the arrangement | positioning area of the pixels 73 and 83 for focus detection.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... Solid-state imaging device, 12 ... Imaging pixel, 12c ... Micro lens, 12e ... Photoelectric conversion area, 13 ... Focus detection pixel, 13a ... Photoelectric conversion area, 13b ... Photoelectric conversion area, 13c ... Micro lens, 41 ... Solid Imaging device, 43 ... focus detection pixel, 43b ... photoelectric conversion region, 43c ... micro lens, 51 ... solid state imaging device, 53 ... focus detection pixel, 53a ... photoelectric conversion region, 53c ... micro lens, 71 ... solid state imaging device 73 ... Focus detection pixel, 73a ... Photoelectric conversion area, 73c ... Micro lens, 83 ... Focus detection pixel, 83b ... Photoelectric conversion area, 83c ... Micro lens, QT ... Transfer transistor, FD ... Floating diffusion, QA: amplifying element, QS: row selection transistor, QR: reset transistor

Claims (10)

A group of imaging pixels that are provided on the imaging surface and photoelectrically convert a received light beam in pixel units to generate an image signal;
A circular microlens disposed in front of each of the imaging pixels;
Wherein provided in the group of image sensing pixels has a plurality of rectangular compartments size of which corresponds to the image pickup pixels in one array direction of the group of the image pickup pixels, received light flux compartment unit A plurality of focus detection pixels that divide the pupil and photoelectrically convert them to generate focus detection signals;
An oval microlens disposed in front of each of the focus detection pixels,
The focus detection pixel is:
A position shifted in the minor axis direction from the center of the elliptical microlenses of said compartments, further comprising a rectangular photoelectric conversion area having a size that spans the plurality of imaging pixels,
The solid-state imaging device, wherein the focus detection pixels form a pair adjacent to focus detection pixels having different shift directions of the photoelectric conversion regions in other arrangement directions. A group of imaging pixels that are provided on the imaging surface and photoelectrically convert a received light beam in pixel units to generate an image signal;
A circular microlens disposed in front of each of the imaging pixels;
Wherein provided in the group of image sensing pixels has a plurality of rectangular compartments size of which corresponds to the image pickup pixels in one array direction of the group of the image pickup pixels, received light flux compartment unit A plurality of focus detection pixels that divide the pupil and photoelectrically convert them to generate focus detection signals;
An oval microlens disposed in front of each of the focus detection pixels,
The focus detection pixel is:
A position shifted in the minor axis direction from the center of the elliptical microlenses of said compartments, further comprising a rectangular photoelectric conversion area having a size that spans the plurality of imaging pixels,
The solid-state imaging device, wherein the focus detection pixels form a pair adjacent to the focus detection pixels having different shift directions of the photoelectric conversion regions in the oblique direction with respect to the one arrangement direction. A group of imaging pixels that are provided on the imaging surface and photoelectrically convert a received light beam in pixel units to generate an image signal;
A circular microlens disposed in front of each of the imaging pixels;
Wherein provided in the group of image sensing pixels has a plurality of rectangular compartments size of which corresponds to the image pickup pixels in one array direction of the group of the image pickup pixels, received light flux compartment unit A plurality of focus detection pixels that divide the pupil and photoelectrically convert them to generate focus detection signals;
An oval microlens disposed in front of each of the focus detection pixels,
The focus detection pixel is:
A position shifted in the minor axis direction from the center of the elliptical microlenses of said compartments, further comprising a rectangular photoelectric conversion area having a size that spans the plurality of imaging pixels,
The solid-state imaging device, wherein the focus detection pixels form a pair adjacent to the focus detection pixels having different shift directions of the photoelectric conversion regions in the one arrangement direction. A group of imaging pixels that are provided on the imaging surface and photoelectrically convert a received light beam in pixel units to generate an image signal;
A circular microlens disposed in front of each of the imaging pixels;
Wherein provided in the group of image sensing pixels has a plurality of rectangular compartments size of which corresponds to the image pickup pixels in one array direction of the group of the image pickup pixels, received light flux compartment unit A plurality of focus detection pixels that divide the pupil and photoelectrically convert them to generate focus detection signals;
An oval microlens disposed in front of each of the focus detection pixels,
The focus detection pixel is:
A position displaced longitudinally from the center of the elliptical microlenses of said compartments, further comprising a photoelectric conversion area,
The solid-state imaging device, wherein the focus detection pixels are paired with a focus detection pixel having a different shift direction of the photoelectric conversion region in an oblique direction with respect to the one arrangement direction. A group of imaging pixels that are provided on the imaging surface and photoelectrically convert a received light beam in pixel units to generate an image signal;
A circular microlens disposed in front of each of the imaging pixels;
Wherein provided in the group of image sensing pixels has a plurality of rectangular compartments size of which corresponds to the image pickup pixels in one array direction of the group of the image pickup pixels, received light flux compartment unit A plurality of focus detection pixels that divide the pupil and photoelectrically convert them to generate focus detection signals;
An elliptical microlens disposed in front of each of the focus detection pixels;
A solid-state imaging device comprising: The solid-state imaging device according to claim 5,
The focus detection pixel is:
A position shifted in the minor axis direction from the center of the elliptical microlenses of said compartments, further comprising a rectangular photoelectric conversion area having a size that spans the plurality of imaging pixels,
The solid-state imaging device, wherein the focus detection pixels form a pair adjacent to focus detection pixels having different shift directions of the photoelectric conversion regions. The solid-state imaging device according to claim 5,
The focus detection pixel is:
Further comprising a photoelectric conversion area in a position shifted longitudinally from the center of the elliptical microlenses of said compartments,
The solid-state imaging device, wherein the focus detection pixels form a pair adjacent to focus detection pixels having different shift directions of the photoelectric conversion regions. The solid-state imaging device according to claim 6 or 7,
A plurality of pairs of focus detection pixels are arranged along the pupil division direction. The solid-state imaging device according to any one of claims 1 to 4 and claim 8,
The solid-state imaging device, wherein the plurality of pairs of focus detection pixels are staggered along the pupil division direction. The solid-state imaging device according to any one of claims 1 to 9,
The solid-state imaging device, wherein the focus detection pixels occupy a section corresponding to the two imaging pixels adjacent in the one arrangement direction.

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