JP5028077B2 - Imaging device, method for determining defective pixel thereof, and program - Google Patents

Description

The present invention relates to an imaging apparatus and method for discriminating the defective pixel, and a program, the image pickup apparatus and a method for discriminating the defective pixel that gives detects the defective pixel, and a program.

  In general, in an imaging device such as a high-definition electronic camera using a solid-state imaging device having multiple pixels, the frequency of occurrence of defective pixels, that is, defective pixels, increases. In such an imaging apparatus, a technique for detecting and correcting defective pixels is essential. By correcting singular points typified by defective pixels, the yield of the solid-state imaging device can be improved and the price of the imaging device can be significantly reduced.

  There are a plurality of defective factors of defective pixels of the solid-state imaging device, such as deterioration of the light receiving device and deterioration of the transfer path for transferring the signal charge. For example, if dust adheres to the vertical transfer path for some reason during the manufacture of the CCD, it is difficult to transfer the electrification for the pixel and subsequent pixels. Such defective pixels appear as straight scratches. Therefore, a technique for reducing the amount of position information by storing only the scratch start address and analyzing whether or not the scratch is conspicuous is disclosed (for example, Patent Document 1). reference).

On the other hand, in recent years, CMOS sensors are increasingly used as image sensors. The CMOS sensor includes a photodiode, a readout circuit, and a column amplifier. The photodiodes are two-dimensionally arranged on the imaging surface and photoelectrically convert incident light. The reading circuit reads output signals from the plurality of photodiodes. The column amplifier reads the output signal from the vertical readout circuit.
JP 2004-23683 A

  However, for example, defective pixels may continue depending on the location of the defect factor on the image sensor, or accidentally isolated defective pixels may continue. In the technique described in Patent Document 1, since the correction method is switched simply by determining the presence or absence of defective pixels, there is a possibility that accurate correction processing cannot be performed.

  When a CMOS sensor is used as the image sensor, there are a plurality of defect factors specific to the CMOS sensor. For example, when the photodiode is a defect factor, the dark current characteristic is the cause, and the sensor output (scratch level) of the defective pixel depends on conditions such as accumulation time and temperature. For this reason, correction by real-time pixel interpolation is suitable for defective pixels in which the photodiode is a defect factor. Also, depending on the conditions, defective pixels may not be noticeable and correction is not necessary.

  Further, when the readout circuit is a defect factor, it is because the transistor of the readout circuit fails and does not function, so the scratch level does not depend on the accumulation time or temperature. For this reason, a defective pixel whose defect is caused by a readout circuit always needs to be corrected by interpolation from surrounding pixels.

  Further, when the column amplifier is a defect factor, it is due to variations in characteristics of the column amplifier transistor, and the scratch level does not depend on the accumulation time or temperature. For this reason, it is suitable to detect and hold the defect level in advance for the defective pixel whose defect is caused by the column amplifier, and to correct the defect pixel by adjusting the defect level.

  With the technique described in Patent Document 1, it is impossible to accurately determine a plurality of defect factors existing on the image sensor and switch the correction method according to the difference in the dependency of the scratch level and the imaging conditions.

The present invention is to provide a determination method, and program of the image pickup device and a defective pixel or can accurately determine another to Rukoto those from any of the defect factors defective pixel is plural.

To achieve the above object, an imaging apparatus of the present invention includes an acquisition means for acquiring a plurality of image data obtained under different conditions from the sensor, each defective pixel from the plurality of image data to which the acquired detected And detecting a defect factor of the detected defective pixel based on a difference in output level of the defective pixel detected from each of the plurality of video data, and detecting means for acquiring the output level of the defective pixel And a discriminating means for performing the above-mentioned.
To achieve the above object, the determination method of the defective pixel of the image pickup apparatus of the present invention includes an acquisition step of acquiring a plurality of image data obtained under different conditions from the sensor, the acquired plurality of image data has been Detecting a defective pixel from each of the plurality of video data to obtain an output level of the defective pixel, and a difference between output levels of the defective pixel detected from the plurality of video data And a determination step of determining a defect factor of the pixel.

According to the present invention, either exactly it can determine another to Rukoto by any defects pixel of a plurality of defective factors.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a block diagram showing an overall configuration of an imaging apparatus according to an embodiment of the present invention.

  In FIG. 1, the imaging apparatus 100 includes a light emitting unit 101, a lens 102, an iris 103, an iris motor 104, a CMOS sensor 105, an AD conversion unit 106, a defect detection unit 107, a memory 108, and a defect correction unit 109. In addition, the imaging apparatus 100 includes a CPU 110, an aperture driving circuit 111, and a CMOS sensor driving circuit 112.

  Incident light output from the light emitting unit 101 is imaged by the lens 102, the incident light amount is adjusted by the iris 103, and is incident on the CMOS sensor 105. Incident light incident on the CMOS sensor 105 is photoelectrically converted by the CMOS sensor 105, AD converted by the AD converter 106, and digitized video data is input to the defect detector 107 and the defect corrector 109.

  When a defective pixel is detected, a defective pixel detection process is performed in the defect detection unit 107 based on the video data, and information on the defective pixel is held in the memory 108.

  At the time of defective pixel correction, the video data is input to the defect correction unit 109, and correction processing is performed based on the scratch information held in the memory 108 when the defective pixel is detected.

  The CMOS sensor drive circuit 112 controls the accumulation operation, read operation, and reset operation of the CMOS sensor 105.

  The aperture driving circuit 111 controls the iris motor 104 that drives the iris 102.

  The CPU 110 controls the CMOS sensor driving circuit 112 based on the shutter speed related parameters, and controls the aperture driving circuit 111 based on the aperture related parameters.

  FIGS. 2A and 2B are diagrams for explaining a defective pixel that causes deterioration of the photodiode of the CMOS sensor 105 in FIG. 1, FIG. 2A shows a configuration of the CMOS sensor 105, and FIG. 2B shows a defective pixel. Indicates a pattern.

  2A, the CMOS sensor 105 includes a photodiode 601, a readout circuit 602, a column amplifier 603, a vertical scanning circuit 604, and a horizontal scanning circuit 605.

  The photodiode 601 is two-dimensionally arranged on the imaging surface and photoelectrically converts incident light. The reading circuit 602 reads output signals from the plurality of photodiodes 601. The column amplifier 603 reads an output signal from the vertical readout circuit 602.

  Video signals accumulated in the photodiode 601 by driving the vertical scanning circuit 604 and the horizontal scanning circuit 605 are sequentially output.

  As shown in FIG. 2A, when the photodiodes 601a and 601b are defect factors, the defective pixel pattern on the imaging surface is as shown in FIG. Since the photodiode 601 is independent for each pixel, there is a high possibility of an isolated point defect. When the photodiode 601 is a defect factor, the dark current characteristic is the cause, and the sensor output (scratch level) of the defective pixel depends on conditions such as accumulation time and temperature. For this reason, correction by real-time pixel interpolation is suitable for defective pixels for which the photodiode 601 is a defect factor. Also, depending on the conditions, defective pixels may not be noticeable and correction is not necessary.

  FIGS. 3A and 3B are diagrams for explaining a defective pixel that causes deterioration in the readout circuit of the CMOS sensor 105 in FIG. 1. FIG. 3A shows a configuration of the CMOS sensor 105, and FIG. 3B shows a defective pixel. Indicates a pattern.

  As shown in FIG. 3A, when the readout circuit 602a is a defect factor, the defective pixel pattern is as shown in FIG. Since the readout circuit 602a is shared by a plurality of photodiodes 601, defective pixels continue for the number of shared pixels. When the reading circuit 602 is a defect factor, it is because a transistor in the reading circuit fails and does not function, so the scratch level does not depend on the accumulation time or temperature. Therefore, a defective pixel whose defect is caused by the readout circuit 602 always needs to be corrected by interpolation from surrounding pixels.

  4A and 4B are diagrams for explaining a defective pixel that causes deterioration of the column amplifier of the CMOS sensor 105 in FIG. 1. FIG. 4A shows a configuration of the CMOS sensor 105, and FIG. 4B shows a defective pixel. Indicates a pattern.

  As shown in FIG. 4A, when the column amplifier 603a is a defect factor, the defective pixel pattern is as shown in FIG. Since the column amplifier 603 is shared by all the photodiodes 601 in the vertical direction, the line amplifier 603 is completely flawed. When the column amplifier 603 is a defect factor, it is due to variations in characteristics of the column amplifier transistor, and the scratch level does not depend on the accumulation time or temperature. For this reason, it is suitable for the defective pixel of the defect factor of the column amplifier 603a to detect and hold the defect level in advance and to correct the defect pixel by adjusting the defect level.

  FIG. 5 is a diagram showing the relationship between the imaging conditions and the sensor output (scratch level) of the defective pixel in the CMOS sensor 105 of FIG.

  FIG. 5A is a diagram illustrating the relationship between the accumulation time and the sensor output.

  In FIG. 5A, when the photodiode 601 is a defect factor, if the accumulation time is doubled, the sensor output is also doubled proportionally. On the other hand, when the readout circuit 602 or the column amplifier 603 is a defect factor, the sensor output does not depend on the accumulation time.

  FIG. 5B is a diagram showing the relationship between temperature and sensor output.

  In FIG. 5B, when the photodiode 601 is a defect factor, the sensor output also doubles when the temperature becomes high (+8 to 10 ° C.). On the other hand, when the reading circuit 602 or the column amplifier 603 is a defect factor, the sensor output does not depend on the temperature.

  FIG. 6 is a diagram for explaining a data flow at the time of defect detection and defect correction in the imaging apparatus 100 of FIG.

  In FIG. 6, the defect detection unit 107 detects defective pixels in the input video data, and stores the position information (address) and sensor output (level) of the defective pixels in the memory 108.

  The CPU 110 controls the aperture driving circuit 111 so as to perform defective pixel detection processing a plurality of times at different shutter speeds, and stores each address and level in the memory 108. In addition, the CPU 110 compares the level of the defective pixel at the same address under each condition, determines the defect factor by referring to the address, and stores a scratch flag in the memory 108 according to the determination result.

  The defect correction unit 109 reads the scratch flag from the memory 108, recognizes the defect factor of each address, and performs correction processing according to the defect factor.

  FIG. 7 is a flowchart of the defect detection process executed by the CPU 110 in FIG.

  In FIG. 7, the CPU 110 controls the aperture driving circuit 111 to close the iris 103 and set the input to the CMOS sensor 105 in a light shielding state (step S <b> 301). Next, the CPU 110 determines a threshold value Th1 for determining whether or not the pixel is a defective pixel, and a threshold value Th2 for determining whether or not the defect factor is deterioration of the photodiode 601 (step S302).

  The CPU 110 controls the parameters of the CMOS sensor drive circuit 112, sets the shutter speed to 1/4 sec, and performs the first defective pixel detection process based on the threshold value Th1 (step S303). By this detection process, the address and level of the defective pixel are stored in the memory 108.

  Next, the CPU 110 controls the parameters of the CMOS sensor drive circuit 112, sets the shutter speed to ½ sec, and performs the second defective pixel detection process based on the threshold value Th1 (step S304). By this detection process, the address and level of the defective pixel are stored in the memory 108.

  Next, the CPU 110 compares the levels of defective pixels at the same address in the first and second defective pixel detection processes, and determines whether or not the difference between them is larger than a threshold value Th2 (step S305).

  As a result of the determination in step S305, when the difference is larger than the threshold value Th2, that is, as shown in FIG. 5A, when the level of the defective pixel is doubled and the level of the defective pixel depends on the shutter speed, It is determined that the deterioration of the photodiode 601 is a defect factor. Therefore, the normal flag is stored in the memory 108 as a scratch flag (step S306), and this process is terminated.

  As a result of the determination in step S305, when the difference is smaller than the threshold value Th2, that is, when the dependency of the defective pixel level on the shutter speed is small, it is determined that other than the deterioration of the photodiode 601 is a defect factor, and the process proceeds to step S307. move on.

  In step S307, the pattern matching of the address of the defective pixel on the imaging surface is performed to determine whether or not the defect continues in all the pixels in the vertical direction.

  As a result of the determination in step S307, when defects continue in all the pixels in the vertical direction, it is determined that the deterioration of the column amplifier 603 is a defect factor as shown in FIG. Therefore, the continuous flag is stored in the memory 108 as a scratch flag (step S308), and this process is terminated.

  As a result of the determination in step S307, when the defect does not continue in all the pixels in the vertical direction, that is, when the defect continues for the pixels sharing the readout circuit 602, the readout circuit 602 is deteriorated as shown in FIG. It is determined that it is a defect factor. Therefore, a failure flag is stored in the memory 108 as a scratch flag (step S309), and this process is terminated.

  According to the process of FIG. 7, when the difference is larger than the threshold Th2, that is, when the level of the defective pixel depends on the shutter speed (YES in step S305), it is determined that the deterioration of the photodiode 601 is a defect factor. . Thereby, it is possible to accurately determine which of the plurality of defective pixels is due to a defect factor, and to improve the image quality by switching the correction method according to the defect factor.

  FIG. 8 is a flowchart of the defect correction process executed by the CPU 110 in FIG. This process is executed after the defect detection process of FIG.

  In FIG. 8, the CPU 110 reads the address, level, and scratch flag of the defective pixel from the memory 108 (step S1001).

  Next, it is determined whether or not the read scratch flag is a normal flag (step S1002). As a result of the determination, when the read scratch flag is a normal flag, that is, when deterioration of the photodiode 601 is a defect factor, the process proceeds to step S1003.

  In step S1003, it is determined whether or not the shutter speed is smaller than a predetermined threshold value Ths. As a result, when the shutter speed is lower than the predetermined threshold Ths, it is determined whether or not the temperature is lower than the predetermined threshold Tht (step S1004). As a result of this determination, if the temperature is lower than the predetermined threshold value Tht, scratches are not noticeable, and it is determined that deterioration due to correction is noticeable when correction processing is performed. Therefore, this process is terminated without performing the correction process.

  If the result of determination in step S1003 is that the shutter speed is greater than the predetermined threshold value Ths or the result of determination in step S1004 is that the temperature is greater than the predetermined threshold value Tht, it is determined that the scratch is conspicuous, and the process proceeds to step S1005.

  In step S1005, correction processing by interpolation from surrounding pixels is performed, and this processing ends.

  If the result of determination in step S1002 is that the read scratch flag is not a normal flag, it is determined whether or not the read scratch flag is a failure flag (step S1006). As a result of this determination, when the read flaw flag is a failure flag, that is, when deterioration of the readout circuit 602 is a defect factor, correction processing by interpolation from surrounding pixels is performed (step S1005), and this processing ends. .

  As a result of the determination in step S1006, when the read scratch flag is not a failure flag (continuous flag), that is, when deterioration of the column amplifier 603 is a defect factor, the process proceeds to step S1007.

  In step S1007, a correction process is performed by subtracting the level of the defective pixel stored in the memory 108, and this process ends.

  According to the processing of FIG. 8, the address, level, and scratch flag of the defective pixel are read from the memory 108 (step S1001), and correction processing is performed according to the read scratch flag (step S1005, step S1007). Thereby, it is possible to accurately determine which of the plurality of defective pixels is due to a defect factor, and to improve the image quality by switching the correction method according to the defect factor.

  FIG. 9 is a flowchart of a modification of the defect detection process of FIG.

  In FIG. 9, the CPU 110 controls the aperture driving circuit 111 to close the iris 103 and put the input to the CMOS sensor 105 in a light-shielded state (step S501). Next, the CPU 110 determines a threshold value Th1 for determining whether or not the pixel is a defective pixel, and a threshold value Th2 for determining whether or not the defect factor is deterioration of the photodiode 601 (step S502).

  The CPU 110 controls the parameters of the CMOS sensor drive circuit 112, sets the shutter speed to ½ sec, sets the temperature to 20 ° C., and performs the first defective pixel detection process based on the threshold value Th1 (step S503). By this detection process, the address and level of the defective pixel are stored in the memory 108.

  Next, the CPU 110 controls the parameters of the CMOS sensor driving circuit 112, sets the temperature to 28 ° C., and performs the second defective pixel detection process based on the threshold value Th1 (step S504). By this detection process, the address and level of the defective pixel are stored in the memory 108.

  Next, the CPU 110 compares the levels of defective pixels at the same address in the first and second defective pixel detection processes, and determines whether or not the difference between them is larger than a threshold value Th2 (step S505).

  As a result of the determination in step S505, when the difference is larger than the threshold Th2, that is, as shown in FIG. 5B, the level of the defective pixel is doubled and the level of the defective pixel depends on the temperature. It is determined that the deterioration of the diode 601 is a defect factor. Therefore, the normal flag is stored in the memory 108 as a scratch flag (step S506), and this process is terminated.

  As a result of the determination in step S505, when the difference is smaller than the threshold Th2, that is, when the dependency of the level of the defective pixel on the temperature is small, it is determined that other than the deterioration of the photodiode 601 is a defect factor, and the process proceeds to step S507. .

  In step S507, the pattern matching of the defective pixel address on the imaging surface is performed to determine whether or not the defect continues in all the pixels in the vertical direction.

  As a result of the determination in step S507, when defects continue in all the pixels in the vertical direction, it is determined that the deterioration of the column amplifier 603 is a defect factor as shown in FIG. Therefore, the continuous flag is stored in the memory 108 as a scratch flag (step S508), and this process is terminated.

  As a result of the determination in step S507, when the defect does not continue in all the pixels in the vertical direction, that is, when the defect continues for the pixels sharing the readout circuit 602, the readout circuit 602 is deteriorated as shown in FIG. It is determined that it is a defect factor. Therefore, a failure flag is stored in the memory 108 as a scratch flag (step S509), and this process is terminated.

  According to the process of FIG. 9, when the difference is larger than the threshold Th2, that is, when the level of the defective pixel depends on the temperature (YES in step S505), it is determined that the deterioration of the photodiode 601 is a defect factor. Thereby, it is possible to accurately determine which of the plurality of defective pixels is due to a defect factor, and to improve the image quality by switching the correction method according to the defect factor.

  FIG. 10 is a flowchart of another modification of the defect detection process of FIG.

  In FIG. 10, the CPU 110 controls the aperture driving circuit 111 to close the iris 103 and put the input to the CMOS sensor 105 in a light shielding state (step S <b> 401). Next, the CPU 110 determines a threshold value Th1 for determining whether or not the pixel is a defective pixel, and a threshold value Th2 for determining whether or not the defect factor is deterioration of the photodiode 601 (step S402).

  The CPU 110 controls the parameters of the CMOS sensor driving circuit 112, sets the shutter speed to ½ sec, and performs defective pixel detection processing (step S403). By this detection process, the address and level of the defective pixel are stored in the memory 108.

  Next, pattern matching is performed on the address of the defective pixel on the imaging surface (step S404). If the defective pixel is isolated as a result of this determination, it is determined that the deterioration of the photodiode 601 is a defect factor as shown in FIG. Therefore, the normal flag is stored in the memory 108 as a scratch flag (step S405), and this process is terminated.

  If the result of determination in step S404 is that a defect continues in all the pixels in the vertical direction, it is determined whether or not the level variation of the defective pixel in the pattern is greater than the threshold Th2 (step S406).

  If the result of determination in step S406 is that the variation in level of defective pixels in the pattern is smaller than the threshold Th2, it is determined that the deterioration of the column amplifier 603 is a defect factor as shown in FIG. Therefore, the continuous flag is stored in the memory 108 as a scratch flag (step S407), and this process is terminated.

  As a result of the determination in step S406, when the variation in the level of the defective pixel in the pattern is larger than the threshold Th2, it is determined that the defective pixel due to the defect of the photodiode 601 has been accidentally continued, and the processing after step S405 is performed. Execute.

  As a result of the determination in step S404, if defects continue for the number of pixels sharing the readout circuit 602, it is determined whether or not the level variation of the defective pixels in the pattern is greater than the threshold Th2 (step S408).

  As a result of the determination in step S408, when the variation in the level of the defective pixel in the pattern is smaller than the threshold Th2, it is determined that the deterioration of the readout circuit 602 is a defect factor as shown in FIG. Therefore, a failure flag is stored in the memory 108 as a scratch flag (step S409), and this process is terminated.

  As a result of the determination in step S408, when the variation in the level of the defective pixel in the pattern is larger than the threshold value Th2, it is determined that the defective pixel due to the defect of the photodiode 601 has been accidentally continued, and the processing after step S405 is performed. Execute.

  According to the process of FIG. 10, when the defective pixel is isolated, it is determined that the deterioration of the photodiode 601 is a defect factor (step S404). Thereby, it is possible to accurately determine which of the plurality of defective pixels is due to a defect factor, and to improve the image quality by switching the correction method according to the defect factor.

  Any of the processes, functions, and the like described in the above embodiments can be realized by a computer-readable program or the like.

  In this case, the processes, functions, and the like described in the above embodiments are realized when a computer (CPU, MPU, or the like) included in the system or apparatus executes the above programs. In other words, the above-described program or the like causes the computer included in the system or apparatus to execute the processes and functions described in the above-described embodiment. In this case, the above-described program or the like is provided to a computer included in the system or apparatus via a computer-readable storage medium or a network.

  A magnetic disk, an optical disk, a magneto-optical disk, a hard disk, a magnetic tape, a nonvolatile memory, or the like can be used as a storage medium that provides the above-described program or the like to a computer included in the system or apparatus.

  Moreover, you may comprise a part of said program etc. using OS (operating system) etc. which are operate | moving on the computer.

  Furthermore, a part of the above-described program may be executed by a function expansion board inserted into the computer or a function expansion unit connected to the computer.

1 is a block diagram illustrating an overall configuration of an imaging apparatus according to an embodiment of the present invention. It is a figure explaining the defective pixel of the photodiode deterioration factor of the CMOS sensor 105 of FIG. 1, (a) shows the structure of the CMOS sensor 105, (b) shows a defective pixel pattern. FIGS. 2A and 2B are diagrams for explaining a defective pixel that causes deterioration in a readout circuit of the CMOS sensor 105 in FIG. 1, in which FIG. 1A shows the configuration of the CMOS sensor 105, and FIG. FIGS. 2A and 2B are diagrams for explaining defective pixels that cause column amplifier deterioration in the CMOS sensor 105 in FIG. 1, in which FIG. 1A shows the configuration of the CMOS sensor 105, and FIG. FIG. 2 is a diagram illustrating a relationship between imaging conditions and sensor output (scratch level) of defective pixels in the CMOS sensor of FIG. 1, (a) illustrating a relationship between accumulation time and sensor output, and (b) illustrating temperature and sensor output. Show the relationship. It is a figure explaining the data flow at the time of the defect detection at the time of the defect detection in the imaging device 100 of FIG. It is a flowchart of the defect detection process performed with CPU110 in FIG. It is a flowchart of the defect correction process performed by CPU110 in FIG. It is a flowchart of the modification of the defect detection process of FIG. It is a flowchart of the other modification of the defect detection process of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Imaging device 107 Defect detection part 108 Memory 109 Defect correction part 110 CPU

Claims (11)

An acquisition unit configured to acquire a plurality of image data obtained under different conditions from the sensor,
Detecting means for detecting a defective pixel from each of the plurality of acquired video data and acquiring an output level of the defective pixel;
An imaging apparatus comprising: a discriminating unit that discriminates a defect factor of the detected defective pixel based on a difference in output level of the defective pixel detected from each of the plurality of video data. The imaging apparatus according to claim 1, wherein the acquisition unit acquires a plurality of video data obtained under different conditions from a light-shielded sensor . Said sensor, CMOS sensor, comprising: a photodiode for photoelectrically converting an image focused by the lenses, and a read circuit for reading an output signal from the photodiode, and a column amplifier to read the output signal from the readout circuit the imaging apparatus according to claim 1 or 2, characterized in that. Said determination means, when the difference in the level of the output is greater than the threshold value, the defect factor of the defective pixel, according to claim 3, characterized in that to determine that is due to the dark current of the photodiode Imaging device. The condition is, the imaging apparatus according to any one of claims 1 to 4, characterized in that at least one of shutter speed and temperature. The detecting means acquires the addresses of the defective pixels of each detected,
The determination means is detected based on a difference in output level of the defective pixel detected from each of the plurality of video data, and whether or not the acquired address of the defective pixel is continuous. the imaging apparatus according to claim 1, characterized that you determine the defect factor of the defective pixel. Said sensor, CMOS sensor, comprising: a photodiode for photoelectrically converting an image focused by the lenses, and a read circuit for reading an output signal from the photodiode, and a column amplifier to read the output signal from the readout circuit And
In the determination unit, when the acquired address of the defective pixel is continuous in at least pixels sharing the readout circuit, the defect factor of the detected defective pixel is due to the readout circuit. The imaging device according to claim 6 , wherein the imaging device is discriminated. The determining means is further configured to cause a defect factor of the detected defective pixel to be due to a dark current of the photodiode when a variation in output level of the defective pixel having consecutive acquired addresses is larger than a threshold value. It is discriminate | determined that it is. The imaging device of Claim 7 characterized by the above-mentioned. The imaging apparatus according to any one of claims 1 to 8, characterized in that it comprises a correcting means for correcting the defective pixel in the discriminated defective factor method in accordance with. An acquisition step of acquiring a plurality of image data obtained under different conditions from the sensor,
A detecting step of detecting a defective pixel from each of the plurality of acquired video data and acquiring an output level of the defective pixel;
A defective pixel of the imaging apparatus, comprising: a determination step of determining a defect factor of the detected defective pixel based on a difference in output level of the defective pixel detected from each of the plurality of video data. How to determine. A computer-readable program for causing a computer of the imaging apparatus to execute the defective pixel determination method according to claim 10 .

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