JP5016799B2 - 荷電粒子ビームを用いた検査装置 - Google Patents

荷電粒子ビームを用いた検査装置 Download PDF

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Publication number
JP5016799B2
JP5016799B2 JP2005227657A JP2005227657A JP5016799B2 JP 5016799 B2 JP5016799 B2 JP 5016799B2 JP 2005227657 A JP2005227657 A JP 2005227657A JP 2005227657 A JP2005227657 A JP 2005227657A JP 5016799 B2 JP5016799 B2 JP 5016799B2
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charged particle
particle beam
wafer
inspection apparatus
sample
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JP2005333161A (ja
JP2005333161A5 (enExample
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英利 西山
真理 野副
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Hitachi Ltd
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Hitachi Ltd
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JP2005227657A 2005-08-05 2005-08-05 荷電粒子ビームを用いた検査装置 Expired - Fee Related JP5016799B2 (ja)

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JP2005227657A JP5016799B2 (ja) 2005-08-05 2005-08-05 荷電粒子ビームを用いた検査装置

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JP2005227657A JP5016799B2 (ja) 2005-08-05 2005-08-05 荷電粒子ビームを用いた検査装置

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JP2001295399A Division JP3955450B2 (ja) 2001-09-27 2001-09-27 試料検査方法

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JP2005333161A JP2005333161A (ja) 2005-12-02
JP2005333161A5 JP2005333161A5 (enExample) 2008-11-06
JP5016799B2 true JP5016799B2 (ja) 2012-09-05

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JP2005227657A Expired - Fee Related JP5016799B2 (ja) 2005-08-05 2005-08-05 荷電粒子ビームを用いた検査装置

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4891036B2 (ja) * 2006-11-16 2012-03-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体検査装置
JP5044813B2 (ja) * 2007-02-19 2012-10-10 エスアイアイ・ナノテクノロジー株式会社 集束イオンビーム装置及び荷電粒子光学系の調整方法
JP2009099540A (ja) * 2007-09-27 2009-05-07 Hitachi High-Technologies Corp 試料の検査，測定方法、及び走査電子顕微鏡
WO2011058950A1 (ja) * 2009-11-13 2011-05-19 株式会社日立ハイテクノロジーズ 電子線を用いた試料観察方法及び電子顕微鏡
US12169208B2 (en) 2021-11-30 2024-12-17 Innovatum Instruments Inc. Probe tip X-Y location identification using a charged particle beam
US12306241B2 (en) 2022-02-14 2025-05-20 Innovatum Instruments Inc. Automated probe landing
CN119339775B (zh) * 2024-09-06 2025-11-21 华中科技大学 一种存储器件电学性能缺陷的原位测量方法及系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4843330A (en) * 1986-10-30 1989-06-27 International Business Machines Corporation Electron beam contactless testing system with grid bias switching
JPH0786348A (ja) * 1993-09-13 1995-03-31 Fujitsu Ltd 電子ビーム装置
JP2959529B2 (ja) * 1997-06-18 1999-10-06 日本電気株式会社 荷電粒子ビームによる半導体ウエハー検査装置及び検査方法
US6504393B1 (en) * 1997-07-15 2003-01-07 Applied Materials, Inc. Methods and apparatus for testing semiconductor and integrated circuit structures
JP3724949B2 (ja) * 1998-05-15 2005-12-07 株式会社東芝 基板検査装置およびこれを備えた基板検査システム並びに基板検査方法

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JP2005333161A (ja) 2005-12-02

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