JP5005915B2

JP5005915B2 - Multilayer dielectric resonator and multilayer dielectric filter

Info

Publication number: JP5005915B2
Application number: JP2005353468A
Authority: JP
Inventors: 信洋原田; 克史上田; 哲夫山田
Original assignee: Ube Industries Ltd
Current assignee: Ube Corp
Priority date: 2005-12-07
Filing date: 2005-12-07
Publication date: 2012-08-22
Anticipated expiration: 2025-12-07
Also published as: JP2007158920A

Description

本発明は、積層された複数の誘電体基板（誘電体層）間に所要の膜状導電体からなる素子を配置してなる積層型誘電体共振器及び積層型誘電体フィルタに関するものである。本発明の積層型誘電体共振器及び積層型誘電体フィルタは、マイクロ波等の高周波用の電子機器例えば携帯電話機等を構成するための電子部品として使用される。 The present invention relates to a laminated dielectric resonator and a laminated dielectric filter in which elements made of a required film-like conductor are arranged between a plurality of laminated dielectric substrates (dielectric layers). The multilayer dielectric resonator and multilayer dielectric filter of the present invention are used as electronic components for constituting a high-frequency electronic device such as a microwave, for example, a mobile phone.

積層型誘電体共振器及びそれを利用する積層型誘電体フィルタは、高周波用電子機器の小型化に大きく貢献するという理由で、従来より広く使用されている。 A multilayer dielectric resonator and a multilayer dielectric filter using the multilayer dielectric resonator have been widely used for the reason that they greatly contribute to miniaturization of high-frequency electronic devices.

積層型誘電体共振器においては、複数の誘電体基板（誘電体層）を互いに隣接する誘電体基板の主面同士が対向するように積層して基板積層体を形成している。この基板積層体のうちの互いに隣接する誘電体基板間の領域に、誘電体基板の主面に沿って膜状の共振電極が形成されている。該共振電極の一方端は、基板積層体の端面にまで延びており、該端面に形成された接続導体を介してアース電極と接続され、短絡端とされている。アース電極は、基板積層体の主表面（基板積層体を構成する誘電体基板の主面により構成される）または誘電体基板間領域であって共振電極が形成されていない主表面または誘電体基板間領域に形成されている。共振電極の他方端は、基板積層体の内部の誘電体基板間領域内に位置しており、開放端とされている。 In a multilayer dielectric resonator, a plurality of dielectric substrates (dielectric layers) are laminated such that main surfaces of adjacent dielectric substrates face each other to form a substrate laminate. A film-like resonance electrode is formed along the main surface of the dielectric substrate in a region between adjacent dielectric substrates in the substrate laminate. One end of the resonance electrode extends to the end face of the substrate laminate, and is connected to the ground electrode via a connection conductor formed on the end face to be a short-circuit end. The ground electrode is the main surface of the substrate laminate (configured by the principal surface of the dielectric substrate constituting the substrate laminate) or the main surface or dielectric substrate between the dielectric substrates and the resonance electrode is not formed. It is formed in the inter-region. The other end of the resonance electrode is located in a region between the dielectric substrates inside the substrate laminate, and is an open end.

このような共振器の共振周波数ｆは、基板積層体の内部に位置する共振電極の長さ（短絡端から開放端まで距離）をＬとし、誘電体基板の比誘電率をεｒとし、光速をｖとした場合、次式：
ｆ＝ｖ／［４Ｌ（εｒ）^１／２］
で示されるようになる。このように、共振周波数ｆは内部電極の長さＬによって決まるため、積層型誘電体共振器をこの長さＬより短くして小型化することは困難であった。 The resonance frequency f of such a resonator is such that the length of the resonance electrode (distance from the short-circuited end to the open end) located inside the substrate laminate is L, the relative permittivity of the dielectric substrate is εr, and the speed of light is If v is
f = v / [4L (εr) ^1/2 ]
As shown in As described above, since the resonance frequency f is determined by the length L of the internal electrode, it is difficult to reduce the size of the multilayer dielectric resonator shorter than the length L.

この様な技術的課題を解決するために、例えば特開平６−１２０７０３号公報（特許文献１）の積層型誘電体フィルタにおいては、その図１、図９及び図１４を参照して記載されているように、共振電極（共振素子）の形成されている誘電体基板間領域（誘電体層間領域）及びアース電極の形成されている誘電体基板主面のいずれとも異なる誘電体基板間領域（誘電体層間領域）に内層アース電極を設け、この内層アース電極を共振電極（共振素子）の開放端に平面視で重なる（即ち、誘電体基板（誘電体層）の主面の法線方向に見たときに重なる）ようにしている。この内層アース電極は、共振電極（共振素子）の開放端の上下両側に配置されており、これにより、共振周波数を低下させ、或いは積層型誘電体共振器及び積層型誘電体フィルタの小型化を図っている。 In order to solve such a technical problem, for example, a multilayer dielectric filter disclosed in Japanese Patent Laid-Open No. 6-120703 (Patent Document 1) is described with reference to FIG. 1, FIG. 9 and FIG. As shown, the inter-dielectric substrate region (dielectric layer region) where the resonance electrodes (resonance elements) are formed and the inter-dielectric substrate region (dielectric) different from both the dielectric substrate main surface where the ground electrode is formed An inner layer ground electrode is provided in the body layer region, and this inner layer ground electrode overlaps the open end of the resonance electrode (resonance element) in a plan view (that is, viewed in the normal direction of the main surface of the dielectric substrate (dielectric layer)). To overlap). This inner layer ground electrode is arranged on both the upper and lower sides of the open end of the resonance electrode (resonance element), thereby reducing the resonance frequency or reducing the size of the multilayer dielectric resonator and the multilayer dielectric filter. I am trying.

一方、積層型誘電体フィルタにおいて、共振器間の結合力を高めるために、例えば特開２００３−１５２４０２号公報（特許文献２）には、その図１、図４または図６を参照して、共振電極（第１伝送線路）の形成されている誘電体基板間領域（誘電体層間領域）及びアース電極の形成されている誘電体基板主面のいずれとも異なる誘電体基板間領域（誘電体層間領域）に電極（第２伝送線路）を形成し、この電極（第２伝送線路）と共振電極（第１伝送線路）の開放端近傍とをビアホール導体で接続することが開示されている。 On the other hand, in the multilayer dielectric filter, in order to increase the coupling force between the resonators, for example, Japanese Patent Laid-Open No. 2003-152402 (Patent Document 2) refers to FIG. 1, FIG. 4 or FIG. Inter-dielectric substrate region (dielectric layer region) different from both the dielectric substrate region (dielectric layer region) where the resonance electrode (first transmission line) is formed and the dielectric substrate main surface where the ground electrode is formed It is disclosed that an electrode (second transmission line) is formed in the region, and this electrode (second transmission line) is connected to the vicinity of the open end of the resonance electrode (first transmission line) with a via-hole conductor.

この電極（第２伝送線路）を形成する意図は、それと共振電極（第１伝送線路）との間の誘電体基板間領域（誘電体層間領域）に結合電極を配置することで共振器間の結合を高めることにある。
特開平６−１２０７０３号公報特開２００３−１５２４０２号公報 The intent of forming this electrode (second transmission line) is to place the coupling electrode in the inter-dielectric substrate region (dielectric interlayer region) between it and the resonant electrode (first transmission line). It is to increase the bond.
JP-A-6-120703 JP 2003-152402 A

しかるに、特許文献１に記載の手法では、各共振器の共振電極（共振素子）の開放端は１つであるので、これとの間での所要の容量を確保するために、内層アース電極を共振電極（共振素子）の開放端の上下両側に配置している。このため、共振電極（共振素子）の開放端付近の上下方向（膜厚方向）の電極パターン密度が高くなり、共振器の良好なＱ値の確保が難しく、高性能な共振器特性を得るのが困難になるという技術的課題があった。 However, in the method described in Patent Document 1, since there is one open end of the resonance electrode (resonance element) of each resonator, in order to secure a required capacity between them, an inner layer ground electrode is used. It arrange | positions at the up-and-down both sides of the open end of the resonance electrode (resonance element). For this reason, the electrode pattern density in the vertical direction (film thickness direction) near the open end of the resonance electrode (resonance element) is increased, and it is difficult to ensure a good Q value of the resonator, and high-performance resonator characteristics are obtained. There was a technical problem that would be difficult.

また、特許文献２に記載の手法では、共振電極（第１伝送線路）と電極（第２伝送線路）との間に結合電極を配置するため、結合電極は共振電極（第１伝送線路）の短絡端の近くには配置しないことから、電極（第２伝送線路）の長さは共振電極（第１伝送線路）の長さに比して十分に小さい。従って、特許文献２には、共振電極（第１伝送線路）と電極（第２伝送線路）との組み合わせ構造を採用することで共振器及びフィルタの誘電体基板主面内寸法の低減を図り且つ共振周波数を低下させるという技術的課題に関しては、示唆がない。 In the method described in Patent Document 2, since the coupling electrode is disposed between the resonance electrode (first transmission line) and the electrode (second transmission line), the coupling electrode is the resonance electrode (first transmission line). Since it is not arranged near the short-circuit end, the length of the electrode (second transmission line) is sufficiently smaller than the length of the resonance electrode (first transmission line). Therefore, in Patent Document 2, by adopting a combination structure of a resonance electrode (first transmission line) and an electrode (second transmission line), the dimensions of the resonator and the filter in the main surface of the dielectric substrate are reduced. There is no suggestion regarding the technical problem of lowering the resonance frequency.

そこで、本発明の目的は、膜厚方向の電極パターン密度を高くすることなく、誘電体基板の主面内寸法を低減し且つ共振周波数を低減することが容易で、良好なＱ値の確保が容易な積層型誘電体共振器を提供することにある。 Accordingly, an object of the present invention is to easily reduce the in-plane dimension of the dielectric substrate and reduce the resonance frequency without increasing the electrode pattern density in the film thickness direction, and to ensure a good Q value. An object is to provide an easy laminated dielectric resonator.

また、本発明の目的は、そのような積層型誘電体共振器を用いた積層型誘電体フィルタを提供することにある。 Another object of the present invention is to provide a multilayer dielectric filter using such a multilayer dielectric resonator.

本発明によれば、以上の如き目的を達成するものとして、
複数の誘電体基板を互いに隣接する誘電体基板の主面同士が対向するように積層して基板積層体を形成し、該基板積層体のうちの互いに隣接する誘電体基板の間の領域に前記誘電体基板の主面に沿って延びた膜状の共振電極を形成してなり、前記誘電体基板の主面または誘電体基板間領域であって前記共振電極が形成されていない誘電体基板主面または誘電体基板間領域にはアース電極が形成されており、前記共振電極の一方端は、前記基板積層体の端面にまで延びており、該端面に形成された接続導体を介して前記アース電極と接続されて短絡端とされており、前記共振電極の他方端は、前記基板積層体の内部の誘電体基板間領域内に位置して開放端とされている積層型誘電体共振器であって、
前記アース電極が形成されている前記誘電体基板主面または誘電体基板間領域と前記共振電極が形成されている前記誘電体基板間領域との間に存在する誘電体基板間領域内にて、前記共振電極に沿って互いに反対向きに延びた膜状の第１及び第２の付加的共振電極が形成されており、該第１及び第２の付加的共振電極は第１の端部同士が接続されており、該第１及び第２の付加的共振電極の第１の端部は前記誘電体基板に形成されたビアホール電極を介して前記共振電極の開放端と接続されており、前記第１及び第２の付加的共振電極の第２の端部はそれぞれ前記基板積層体の内部の誘電体基板間領域内に位置して開放端とされていることを特徴とする積層型誘電体共振器、
が提供される。 According to the present invention, the object as described above is achieved.
A plurality of dielectric substrates are laminated so that the principal surfaces of adjacent dielectric substrates face each other to form a substrate laminate, and in the region between the adjacent dielectric substrates in the substrate laminate, A dielectric substrate main body formed by forming a film-like resonance electrode extending along the main surface of the dielectric substrate, wherein the resonance electrode is not formed in the main surface of the dielectric substrate or a region between the dielectric substrates. A ground electrode is formed on a surface or a region between the dielectric substrates, and one end of the resonance electrode extends to an end surface of the substrate laminate, and the ground electrode is connected via a connection conductor formed on the end surface. A multilayered dielectric resonator that is connected to an electrode and serves as a short-circuited end, and the other end of the resonant electrode is an open end located in a region between the dielectric substrates inside the substrate laminate. There,
In the inter-dielectric substrate region existing between the dielectric substrate main surface or the inter-dielectric substrate region where the ground electrode is formed and the inter-dielectric substrate region where the resonant electrode is formed, A film-like first and second additional resonant electrodes extending in opposite directions along the resonant electrode are formed, and the first and second additional resonant electrodes are formed so that the first ends thereof are in contact with each other. A first end of the first and second additional resonant electrodes is connected to an open end of the resonant electrode via a via-hole electrode formed in the dielectric substrate; A laminated dielectric resonance characterized in that the second end portions of the first and second additional resonance electrodes are respectively open in the inter-dielectric substrate region inside the substrate laminate. vessel,
Is provided.

本発明の一態様においては、前記共振電極の一方端は前記基板積層体の端面にまで延びており且つ該端面に形成された接続導体を介して前記アース電極と接続されている。本発明の一態様においては、前記共振電極の一方端は前記誘電体基板に形成されたビアホール電極を介して前記アース電極と接続されている。 In one aspect of the present invention, one end of the resonance electrode extends to the end surface of the substrate laminate, and is connected to the ground electrode via a connection conductor formed on the end surface. In one aspect of the present invention, one end of the resonance electrode is connected to the ground electrode via a via-hole electrode formed on the dielectric substrate.

本発明の一態様においては、前記第１及び第２の付加的共振電極の長さの合計は、前記第１及び第２の付加的共振電極の延びている方向の前記基板積層体の寸法の２分の１以上である。本発明の一態様においては、前記共振電極の開放端は、前記共振電極が延びている方向に関して、前記基板積層体の中心から前記短絡端に向かって前記基板積層体の寸法の８分の１以下の位置と前記基板積層体の中心から前記短絡端とは反対側に向かって前記基板積層体の寸法の８分の１以下の位置との間に存在する。 In one aspect of the present invention, the total length of the first and second additional resonant electrodes is the dimension of the substrate stack in the direction in which the first and second additional resonant electrodes extend. One half or more. In one aspect of the present invention, the open end of the resonance electrode is one-eighth of the dimension of the substrate laminate from the center of the substrate laminate toward the short-circuit end in the direction in which the resonance electrode extends. It exists between the following positions and the position of 1/8 or less of the dimension of the said board | substrate laminated body toward the opposite side to the said short circuit end from the center of the said board | substrate laminated body.

本発明の一態様においては、前記アース電極が形成されている前記誘電体基板主面または誘電体基板間領域と前記第１及び第２の付加的共振電極が形成されている前記誘電体基板間領域との間に存在する誘電体基板間領域内にて、少なくとも前記第１及び第２の付加的共振電極の開放端にそれぞれ対応する部分を有する第１及び第２の周波数調整電極のうちの少なくとも一方が形成されており、該第１及び第２の周波数調整電極はそれぞれ前記アース電極と接続されている。本発明の一態様においては、前記第１及び第２の周波数調整電極はそれぞれ前記基板積層体の端面にまで延びており且つ該端面に形成された接続導体を介して前記アース電極と接続されている。本発明の一態様においては、前記第１及び第２の周波数調整電極はそれぞれ前記誘電体基板に形成されたビアホール電極を介して前記アース電極と接続されている。 In one aspect of the present invention, the dielectric substrate main surface or the inter-dielectric substrate region where the ground electrode is formed and the dielectric substrate between which the first and second additional resonant electrodes are formed Of the first and second frequency adjustment electrodes, each having at least a portion corresponding to an open end of each of the first and second additional resonant electrodes in a region between the dielectric substrates existing between the regions. At least one is formed, and the first and second frequency adjustment electrodes are each connected to the ground electrode. In one aspect of the present invention, each of the first and second frequency adjustment electrodes extends to an end face of the substrate laminate and is connected to the ground electrode via a connection conductor formed on the end face. Yes. In one aspect of the present invention, each of the first and second frequency adjustment electrodes is connected to the ground electrode via a via-hole electrode formed on the dielectric substrate.

本発明の一態様においては、前記共振電極が形成されている前記誘電体基板間領域と前記第１及び第２の付加的共振電極が形成されている前記誘電体基板間領域との間に存在する誘電体基板間領域内にて、少なくとも前記第１及び第２の付加的共振電極の開放端にそれぞれ対応する部分を有し且つ前記ビアホール電極とは非接触の第３及び第４の周波数調整電極のうちの少なくとも一方が形成されており、該第３及び第４の周波数調整電極はそれぞれ前記アース電極と接続されている。本発明の一態様においては、前記第３及び第４の周波数調整電極はそれぞれ前記基板積層体の端面にまで延びており且つ該端面に形成された接続導体を介して前記アース電極と接続されている。本発明の一態様においては、前記第３及び第４の周波数調整電極はそれぞれ前記誘電体基板に形成されたビアホール電極を介して前記アース電極と接続されている。 In one aspect of the present invention, the dielectric substrate exists between the dielectric substrate region where the resonance electrode is formed and the dielectric substrate region where the first and second additional resonance electrodes are formed. Third and fourth frequency adjustments that have at least portions corresponding to the open ends of the first and second additional resonant electrodes, respectively, and are not in contact with the via-hole electrodes, in the inter-dielectric substrate region. At least one of the electrodes is formed, and the third and fourth frequency adjustment electrodes are each connected to the ground electrode. In one aspect of the present invention, each of the third and fourth frequency adjustment electrodes extends to an end surface of the substrate laminate, and is connected to the ground electrode via a connection conductor formed on the end surface. Yes. In one aspect of the present invention, each of the third and fourth frequency adjustment electrodes is connected to the ground electrode via a via-hole electrode formed on the dielectric substrate.

本発明の一態様においては、前記第１及び第２の付加的共振電極が形成されている前記誘電体基板間領域には、前記第１及び第２の付加的共振電極のうちの一方と接続された引き出し電極が形成されており、該引き出し電極は前記基板積層体の端面にまで延びており、該端面に形成された入出力電極と接続されている。本発明の一態様においては、前記第１及び第２の付加的共振電極が形成されている前記誘電体基板間領域と前記共振電極が形成されている前記誘電体基板間領域または前記アース電極が形成されている前記誘電体基板主面または誘電体基板間領域との間の誘電体基板間領域には、前記第１及び第２の付加的共振電極のうちの一方に対応する部分を有する容量結合性の引き出し電極が形成されており、該引き出し電極は前記基板積層体の端面にまで延びており、該端面に形成された入出力電極と接続されている。 In one aspect of the present invention, the region between the dielectric substrates where the first and second additional resonant electrodes are formed is connected to one of the first and second additional resonant electrodes. The lead electrode is formed, extends to the end face of the substrate laminate, and is connected to the input / output electrode formed on the end face. In one aspect of the present invention, the inter-dielectric substrate region in which the first and second additional resonant electrodes are formed and the inter-dielectric substrate region in which the resonant electrode is formed or the ground electrode are provided. A capacitance having a portion corresponding to one of the first and second additional resonant electrodes in the dielectric substrate main surface or the region between the dielectric substrates between the formed dielectric substrate main surface and the region between the dielectric substrates A connective lead electrode is formed. The lead electrode extends to the end face of the substrate laminate, and is connected to an input / output electrode formed on the end face.

更に、本発明によれば、以上の如き目的を達成するものとして、
上記の積層型誘電体共振器を複数配列し且つ互いに隣接する積層型誘電体共振器同士を結合させてなる積層型誘電体フィルタであって、前記複数の積層型誘電体共振器につき共通の前記基板積層体を使用し、両端の積層型誘電体共振器のそれぞれの前記第１及び第２の付加的共振電極の一方に結合された引き出し電極が形成されており、該引き出し電極は前記基板積層体の端面にまで延びており、該端面に形成された入出力電極と接続されていることを特徴とする積層型誘電体フィルタ、
が提供される。 Furthermore, according to the present invention, the object as described above is achieved.
A multilayer dielectric filter in which a plurality of the multilayer dielectric resonators are arranged and the multilayer dielectric resonators adjacent to each other are coupled to each other, wherein the multilayer dielectric resonator is common to the plurality of multilayer dielectric resonators. A substrate laminate is used, and an extraction electrode coupled to one of the first and second additional resonance electrodes of each of the laminated dielectric resonators at both ends is formed, and the extraction electrode is formed on the substrate lamination A laminated dielectric filter, wherein the dielectric filter extends to an end face of the body and is connected to an input / output electrode formed on the end face;
Is provided.

以上のような本発明によれば、アース電極が形成されている誘電体基板主面または誘電体基板間領域と共振電極が形成されている誘電体基板間領域との間に存在する誘電体基板間領域内に特定の第１及び第２の付加的共振電極を形成し、これら第１及び第２の付加的共振電極をビアホール電極を介して共振電極の開放端と接続したことで、実効的に共振電極の長さが長くなり且つ開放端が２つ形成されるので、これら第１及び第２の付加的共振電極の開放端と対向して所要の容量形成に寄与することの必要なアース電極は膜厚方向に片側だけでよい。このため、膜厚方向の電極パターン密度を高くすることなく、誘電体基板の主面内寸法を低減し且つ共振周波数を低減することが容易で、Ｑ値の高い高性能な積層型誘電体共振器が提供される。また、本発明によれば、以上のような積層型誘電体共振器を用いた小型で高性能な積層型誘電体フィルタが提供される。 According to the present invention as described above, the dielectric substrate exists between the main surface of the dielectric substrate on which the ground electrode is formed or the region between the dielectric substrates and the region between the dielectric substrates on which the resonance electrodes are formed. By forming specific first and second additional resonance electrodes in the inter-region, and connecting these first and second additional resonance electrodes to the open ends of the resonance electrodes via via-hole electrodes, effective Since the length of the resonance electrode is increased and two open ends are formed, the grounding necessary to contribute to the formation of a required capacitance is opposed to the open ends of the first and second additional resonance electrodes. The electrode may be only on one side in the film thickness direction. Therefore, it is easy to reduce the in-plane dimensions of the dielectric substrate and the resonance frequency without increasing the electrode pattern density in the film thickness direction, and to achieve a high-performance multilayer dielectric resonance with a high Q value. A vessel is provided. Further, according to the present invention, there is provided a small and high performance multilayer dielectric filter using the multilayer dielectric resonator as described above.

以下、本発明の実施の形態を、図面を参照しながら説明する。尚、以下に説明する図面においては同等の機能を有する部材又は部分には同一または対応する符号が付されている。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding reference numerals are given to members or portions having the same function.

図１は本発明による積層型誘電体共振器の一実施形態を示す模式的分解斜視図であり、図２はその模式的斜視図であり、図３は図２のＡ−Ａ’方向に沿った面で切断した模式的縦断面図である。 FIG. 1 is a schematic exploded perspective view showing an embodiment of a laminated dielectric resonator according to the present invention, FIG. 2 is a schematic perspective view thereof, and FIG. 3 is taken along the AA ′ direction of FIG. It is the typical longitudinal cross-sectional view cut | disconnected by the surface.

本実施形態では、５つの同等な矩形状誘電体基板ａ，ｂ，ｃ，ｄ，ｅをこの順に互いに隣接する誘電体基板の主面（図における上下面）同士が対向するように積層して基板積層体を形成している。誘電体基板ａ〜ｅの材質としては、例えば上記特許文献２に記載されているようなＢａＯ−ＴｉＯ_２系その他の誘電体セラミックを使用することができる。誘電体基板ａ〜ｅの厚さは、例えば２０〜３００μｍ程度である。 In this embodiment, five equivalent rectangular dielectric substrates a, b, c, d, and e are laminated in this order so that the principal surfaces (upper and lower surfaces in the figure) of the dielectric substrates adjacent to each other face each other. A substrate laminate is formed. As the material of the dielectric substrates a to e, for example, BaO—TiO ₂ based dielectric ceramics as described in Patent Document 2 can be used. The thickness of the dielectric substrates a to e is, for example, about 20 to 300 μm.

基板積層体のうちの互いに隣接する誘電体基板ｃ，ｄの間の領域（以下、互いに隣接する任意の２つの誘電体基板の間の空間領域を単に「誘電体基板間領域」という）に誘電体基板の主面に沿ってＡ−Ａ’方向に延びた膜状の共振電極２１が形成されている。誘電体基板ａ，ｂ間の誘電体基板間領域には、共振電極が形成されておらず、大部分において第１のアース電極１０が形成されている。同様に、誘電体基板ｄ，ｅ間の誘電体基板間領域には、共振電極が形成されておらず、大部分において第２のアース電極１１が形成されている。 A region between dielectric substrates c and d adjacent to each other in the substrate stack (hereinafter, a spatial region between any two adjacent dielectric substrates is simply referred to as “dielectric substrate region”) A film-like resonance electrode 21 extending in the AA ′ direction along the main surface of the body substrate is formed. A resonance electrode is not formed in the region between the dielectric substrates a and b, and the first ground electrode 10 is formed in most cases. Similarly, no resonance electrode is formed in the region between the dielectric substrates d and e, and the second ground electrode 11 is formed in the majority.

第１のアース電極１０を誘電体基板ｂの下面に形成することで、誘電体基板ａを省略することができる。同様に、第２のアース電極１１を誘電体基板ｄの上面に形成することで、誘電体基板ｅを省略することができる。また、第２のアース電極１１は、外乱防止の観点から有効であるが、共振器の特性自体に対して格別の影響を与えることはなく、この観点からは誘電体基板ｅと共に省略してもよい。 By forming the first ground electrode 10 on the lower surface of the dielectric substrate b, the dielectric substrate a can be omitted. Similarly, the dielectric substrate e can be omitted by forming the second ground electrode 11 on the upper surface of the dielectric substrate d. In addition, the second ground electrode 11 is effective from the viewpoint of preventing disturbance, but does not significantly affect the characteristics of the resonator itself. From this viewpoint, the second ground electrode 11 may be omitted together with the dielectric substrate e. Good.

共振電極２１のＡ−Ａ’方向の一方端は、基板積層体の端面（各誘電体基板の端面により構成される端面）にまで延びており、該端面に形成された接続導体（外部接地電極）５０を介して第１及び第２のアース電極１０，１１と接続されて短絡端とされている。共振電極２１の他方端は、基板積層体の内部の誘電体基板間領域内に位置して開放端とされている。 One end of the resonance electrode 21 in the AA ′ direction extends to an end surface of the substrate laminate (an end surface constituted by the end surfaces of the dielectric substrates), and a connection conductor (external ground electrode) formed on the end surface. ) Is connected to the first and second earth electrodes 10 and 11 through 50 to form a short-circuited end. The other end of the resonance electrode 21 is located in the inter-dielectric substrate region inside the substrate laminate and is an open end.

尚、共振電極２１の一方端は、図１３に示されているように、接続導体（外部接地電極）５０を介することなく、誘電体基板ｄに形成したビアホール電極（ビアホール導体）１を介して及び／または誘電体基板ｃ，ｂにそれぞれ形成したビアホール電極（ビアホール導体）２，３を介して、第２及び／または第１のアース電極１１，１０と接続してもよい。 As shown in FIG. 13, one end of the resonance electrode 21 is not connected to the connection conductor (external ground electrode) 50 but via the via-hole electrode (via-hole conductor) 1 formed on the dielectric substrate d. Alternatively, the second and / or first ground electrodes 11 and 10 may be connected via via-hole electrodes (via-hole conductors) 2 and 3 formed on the dielectric substrates c and b, respectively.

第１のアース電極１０が形成されている誘電体基板間領域と共振電極２１が形成されている誘電体基板間領域との間に存在する誘電体基板ｂ，ｃ間の誘電体基板間領域内に、共振電極２１に沿ってＡ−Ａ’方向に互いに反対向きに延びた膜状の第１の付加的共振電極２２及び第２の付加的共振電極２３が形成されている。第１及び第２の付加的共振電極２２，２３は第１の端部同士が互いに接続されている。これらの第１及び第２の付加的共振電極２２，２３の第１の端部の接続部分は、誘電体基板ｃに形成されたビアホール電極（ビアホール導体）３１を介して共振電極２１の開放端と接続されている。第１及び第２の付加的共振電極２２，２３の第２の端部は、それぞれ基板積層体の内部の誘電体基板間領域内に位置して開放端とされている。第１及び第２の付加的共振電極２２，２３は、誘電体基板ｂを介して第１のアース電極１０と対向している。 In the inter-dielectric substrate region between the dielectric substrates b and c existing between the inter-dielectric substrate region where the first ground electrode 10 is formed and the inter-dielectric substrate region where the resonance electrode 21 is formed In addition, a film-like first additional resonance electrode 22 and a second additional resonance electrode 23 are formed along the resonance electrode 21 so as to extend in directions opposite to each other in the AA ′ direction. The first and second additional resonant electrodes 22, 23 are connected to each other at their first ends. The connection portions of the first end portions of the first and second additional resonance electrodes 22 and 23 are open ends of the resonance electrode 21 via via hole electrodes (via hole conductors) 31 formed on the dielectric substrate c. Connected with. The second end portions of the first and second additional resonance electrodes 22 and 23 are open ends located in the inter-dielectric substrate region inside the substrate stack. The first and second additional resonance electrodes 22 and 23 are opposed to the first ground electrode 10 through the dielectric substrate b.

共振電極２１、及び第１及び第２の付加的共振電極２２，２３の幅は、適宜設定することができる。これらの電極の長さは任意であるが、第１及び第２の付加的共振電極２２，２３の長さは同一であるのが好ましい。 The widths of the resonance electrode 21 and the first and second additional resonance electrodes 22 and 23 can be set as appropriate. The lengths of these electrodes are arbitrary, but the lengths of the first and second additional resonance electrodes 22 and 23 are preferably the same.

共振電極２１の開放端の誘電体基板主面内位置は、共振電極２１が延びているＡ−Ａ’方向に関して、基板積層体の中心から短絡端に向かって基板積層体の寸法（すなわち誘電体基板の寸法）の８分の１以下の位置と基板積層体の中心から短絡端とは反対側に向かって基板積層体の寸法の８分の１以下の位置との間に存在するのが好ましい。このようにすることで、第１及び第２の付加的共振電極２２，２３の長さを一層大きくすることが容易になる。 The position of the open end of the resonance electrode 21 in the main surface of the dielectric substrate is the dimension of the substrate laminate (ie, dielectric) from the center of the substrate laminate toward the short-circuited end in the AA ′ direction in which the resonance electrode 21 extends. Preferably, it exists between a position of 1/8 or less of the dimension of the substrate) and a position of 1/8 or less of the dimension of the substrate laminate from the center of the substrate laminate to the side opposite to the short-circuit end. . By doing so, it becomes easy to further increase the length of the first and second additional resonance electrodes 22 and 23.

また、第１及び第２の付加的共振電極２２，２３の長さ（第１の端部から第２の端部までの距離）の合計は、好ましくは第１及び第２の付加的共振電極の延びているＡ−Ａ’方向の基板積層体の寸法の２分の１以上、更に好ましくは３分の２以上である。このように第１及び第２の付加的共振電極２２，２３の長さの合計を大きくすることすることで、実効的に共振電極の長さが一層長くなり、誘電体基板の主面内寸法を低減し且つ共振周波数を低減することが一層容易で、よりＱ値の高い高性能な積層型誘電体共振器が得られる。 The sum of the lengths of the first and second additional resonance electrodes 22 and 23 (distance from the first end to the second end) is preferably the first and second additional resonance electrodes. Is one-half or more, more preferably two-thirds or more of the dimension of the substrate laminate in the AA ′ direction. Thus, by increasing the sum of the lengths of the first and second additional resonance electrodes 22 and 23, the length of the resonance electrode is effectively further increased, and the in-plane dimension of the dielectric substrate is increased. It is easier to reduce the resonance frequency and the resonance frequency, and a high-performance multilayer dielectric resonator having a higher Q value can be obtained.

第１及び第２の付加的共振電極２２，２３が形成されている誘電体基板間領域には、第２の付加的共振電極２３と接続された引き出し電極４０が形成されており、該引き出し電極４０は基板積層体の端面にまで延びており、該端面に形成された入出力電極５１と接続されている。入出力電極５１は、第１及び第２のアース電極１０，１１とは非接触とされている。引き出し電極４０と第２の付加的共振電極２３との接続位置は、外部回路との接続インピーダンスに応じて適宜設定できる。また、引き出し電極４０は、第１の付加的共振電極２２に接続しても同様の機能を果たす。 An extraction electrode 40 connected to the second additional resonance electrode 23 is formed in the region between the dielectric substrates where the first and second additional resonance electrodes 22 and 23 are formed. 40 extends to the end face of the substrate laminate, and is connected to an input / output electrode 51 formed on the end face. The input / output electrode 51 is not in contact with the first and second ground electrodes 10 and 11. The connection position between the extraction electrode 40 and the second additional resonance electrode 23 can be appropriately set according to the connection impedance with the external circuit. The lead electrode 40 performs the same function even when connected to the first additional resonance electrode 22.

上記の第１及び第２のアース電極１０，１１、第１及び第２の付加的共振電極２２，２３、ビアホール電極（ビアホール導体）１〜３，３１、及び引き出し電極４０の材質としては、例えば上記特許文献２に記載されているようなＡｇその他の低抵抗導電体を使用することができる。これらの電極は、誘電体基板ａ〜ｅの基板積層体を形成する焼成に先立ち、所定の誘電体基板グリーンシートに低抵抗導電体含有の導電性ペーストを所要パターン状に印刷により形成しておき、これらを同時焼成することで、形成することができる。また、上記の接続導体（外部接地電極）５０及び入出力電極５１の材質としても、同様に、Ａｇその他の低抵抗導電体を使用することができる。これらの電極は、上記同時焼成により得られた基板積層体の外面に対して低抵抗導電体含有の導電性塗材を所要パターン状に印刷することで形成することができる。 Examples of the materials of the first and second ground electrodes 10 and 11, the first and second additional resonance electrodes 22 and 23, the via-hole electrodes (via-hole conductors) 1 to 3 and 31, and the extraction electrode 40 include Ag or other low-resistance conductors as described in Patent Document 2 can be used. These electrodes are formed by printing a conductive paste containing a low resistance conductor in a predetermined pattern on a predetermined dielectric substrate green sheet before firing to form a substrate laminate of dielectric substrates a to e. These can be formed by simultaneous firing. Similarly, Ag and other low-resistance conductors can be used as materials for the connection conductor (external ground electrode) 50 and the input / output electrode 51. These electrodes can be formed by printing a conductive coating material containing a low-resistance conductor in a required pattern on the outer surface of the substrate laminate obtained by the co-firing.

本実施形態においては、共振電極２１が形成された誘電体基板間領域とは異なる誘電体基板間領域に、共振電極２１に接続された第１及び第２の付加的共振電極２２，２３を設けており、第１のアース電極１０に対向する第１及び第２の付加的共振電極２２，２３には複数の開放端（第２の端部）が存在するので、よりキャパシタンス成分を大きくすることができる。従って、従来の共振器より小型化することが容易になり、本質的には第２のアース電極１１の寄与を要することはなく、従って、さほど膜厚方向の電極パターン密度を高くしなくても、容易に共振周波数を低下させることができ、高いＱ値の共振器を得ることができる。具体的数値として、従来の共振器ではＱ値が７０であったのに対して、同等の誘電体基板面内寸法の本実施形態のものではＱ値９０を得ることができた。 In the present embodiment, first and second additional resonance electrodes 22 and 23 connected to the resonance electrode 21 are provided in a region between the dielectric substrates different from the region between the dielectric substrates where the resonance electrode 21 is formed. Since the first and second additional resonant electrodes 22 and 23 facing the first ground electrode 10 have a plurality of open ends (second ends), the capacitance component should be further increased. Can do. Therefore, it is easier to reduce the size than the conventional resonator, and the contribution of the second ground electrode 11 is essentially unnecessary. Therefore, even if the electrode pattern density in the film thickness direction is not so increased. The resonance frequency can be easily reduced, and a resonator having a high Q value can be obtained. As a specific numerical value, the Q value was 70 in the conventional resonator, whereas the Q value 90 could be obtained in the present embodiment having the same dielectric substrate in-plane dimension.

図４は本発明による積層型誘電体共振器の一実施形態を示す模式的分解斜視図であり、図５はその模式的縦断面図である。図４は図１に対応する方向での模式的分解斜視図であり、図５は図３に対応する方向での模式的縦断面図である。 FIG. 4 is a schematic exploded perspective view showing an embodiment of a laminated dielectric resonator according to the present invention, and FIG. 5 is a schematic longitudinal sectional view thereof. 4 is a schematic exploded perspective view in a direction corresponding to FIG. 1, and FIG. 5 is a schematic longitudinal sectional view in a direction corresponding to FIG.

本実施形態では、誘電体基板ａ，ｂ間に同様な誘電体基板ｆが介在している。第１のアース電極１０が形成されている誘電体基板ａ，ｆ間の誘電体基板間領域と第１及び第２の付加的共振電極２２，２３が形成されている誘電体基板ｂ，ｃ間の誘電体基板間領域との間に存在する誘電体基板ｆ，ｂ間の誘電体基板間領域内に、少なくとも第１及び第２の付加的共振電極２２，２３の開放端にそれぞれ対応する部分を有する第１及び第２の周波数調整電極６１，６２が形成されている。ここで、第１及び第２の周波数調整電極６１，６２は、それぞれ第１及び第２の付加的共振電極２２，２３に沿って基板積層体の端面にまで延びており且つ該端面に形成された接続導体（外部接地電極）５０を介して第１及び第２のアース電極１０，１１と接続されている。 In the present embodiment, a similar dielectric substrate f is interposed between the dielectric substrates a and b. Between the dielectric substrates a and f on which the first ground electrode 10 is formed, and between the dielectric substrates b and c on which the first and second additional resonance electrodes 22 and 23 are formed. Portions corresponding to at least the open ends of the first and second additional resonance electrodes 22 and 23 in the inter-dielectric substrate region between the dielectric substrates f and b existing between the dielectric substrate regions First and second frequency adjustment electrodes 61 and 62 having the above are formed. Here, the first and second frequency adjusting electrodes 61 and 62 extend to the end face of the substrate stack along the first and second additional resonant electrodes 22 and 23, respectively, and are formed on the end faces. The first and second earth electrodes 10 and 11 are connected to each other via a connecting conductor (external ground electrode) 50.

尚、第１及び第２の周波数調整電極６１，６２は、図１４に示されているように、接続導体（外部接地電極）５０を介することなく、それぞれ誘電体基板ｆに形成したビアホール電極（ビアホール導体）７１，７２を介して、第１のアース電極１０と接続してもよい。また、第１及び第２の周波数調整電極６１，６２のうちの一方を省略してもよい。 As shown in FIG. 14, the first and second frequency adjustment electrodes 61 and 62 are not connected via the connection conductor (external ground electrode) 50, but via hole electrodes (each formed on the dielectric substrate f). You may connect with the 1st earth electrode 10 via via-hole conductors 71 and 72. One of the first and second frequency adjustment electrodes 61 and 62 may be omitted.

本実施形態においては、上記の図１〜３に係る実施形態と同様な効果に加えて、第１及び第２の周波数調整電極６１，６２を挿入することにより、より正確な共振周波数設定が可能になる。また、第１及び第２の付加的共振電極２２，２３と第１のアース電極１０の間との空間を広くすることができ、この点からもより高いＱ値の共振器を得ることができる。 In the present embodiment, in addition to the same effects as those of the embodiments according to FIGS. 1 to 3, the first and second frequency adjusting electrodes 61 and 62 can be inserted to set a more accurate resonance frequency. become. Further, the space between the first and second additional resonance electrodes 22 and 23 and the first ground electrode 10 can be widened, and a resonator having a higher Q factor can be obtained from this point. .

図６は本発明による積層型誘電体共振器の一実施形態を示す模式的分解斜視図であり、図７はその模式的縦断面図である。図６は図１に対応する方向での模式的分解斜視図であり、図７は図３に対応する方向での模式的縦断面図である。 FIG. 6 is a schematic exploded perspective view showing an embodiment of a laminated dielectric resonator according to the present invention, and FIG. 7 is a schematic longitudinal sectional view thereof. 6 is a schematic exploded perspective view in a direction corresponding to FIG. 1, and FIG. 7 is a schematic longitudinal sectional view in a direction corresponding to FIG.

本実施形態では、誘電体基板ｂ，ｃ間に同様な誘電体基板ｆ’が介在している。第１及び第２の付加的共振電極２２，２３が形成されている誘電体基板ｂ，ｆ’間の誘電体基板間領域と共振電極２１の形成されている誘電体基板ｃ，ｄ間の誘電体基板間領域との間に存在する誘電体基板ｆ’，ｃ間の誘電体基板間領域内に、少なくとも第１及び第２の付加的共振電極２２，２３の開放端にそれぞれ対応する部分を有する第３及び第４の周波数調整電極６３，６４が形成されている。ここで、第３及び第４の周波数調整電極６３，６４は、それぞれ第１及び第２の付加的共振電極２２，２３に沿って基板積層体の端面にまで延びており且つ該端面に形成された接続導体（外部接地電極）５０を介して第１及び第２のアース電極１０，１１と接続されている。 In the present embodiment, a similar dielectric substrate f 'is interposed between the dielectric substrates b and c. The dielectric between the dielectric substrates b and f ′ on which the first and second additional resonant electrodes 22 and 23 are formed, and the dielectric between the dielectric substrates c and d on which the resonant electrode 21 is formed. In the inter-dielectric substrate region between the dielectric substrates f ′ and c existing between the body-substrate regions, at least portions corresponding to the open ends of the first and second additional resonance electrodes 22 and 23 are provided. The third and fourth frequency adjustment electrodes 63 and 64 are formed. Here, the third and fourth frequency adjusting electrodes 63 and 64 extend to the end face of the substrate stack along the first and second additional resonant electrodes 22 and 23, respectively, and are formed on the end faces. The first and second earth electrodes 10 and 11 are connected to each other via a connecting conductor (external ground electrode) 50.

尚、第１及び第２の周波数調整電極６１，６２の場合と同様に、第３及び第４の周波数調整電極６３，６４は、接続導体（外部接地電極）５０を介することなく、それぞれ誘電体基板ｆ’，ｂに形成した不図示のビアホール電極（ビアホール導体）を介して、第１のアース電極１０と接続してもよい。また、第３及び第４の周波数調整電極６３，６４のうちの一方を省略してもよい。 As in the case of the first and second frequency adjustment electrodes 61 and 62, the third and fourth frequency adjustment electrodes 63 and 64 do not pass through the connection conductor (external ground electrode) 50, but are dielectric materials. You may connect with the 1st earth electrode 10 via the via-hole electrode (via-hole conductor) not shown formed in board | substrate f ', b. One of the third and fourth frequency adjustment electrodes 63 and 64 may be omitted.

誘電体基板ｆ’には、ビアホール電極（ビアホール導体）３１と同一の誘電体基板面内位置に、該ビアホール電極３１と接続されたビアホール電極（ビアホール導体）３２が形成されている。これらのビアホール電極（ビアホール導体）３１，３２を介して、第１及び第２の付加的共振電極２２，２３の第１の端部の接続部分が共振電極２１の開放端と接続されている。第３及び第４の周波数調整電極６３，６４は、ビアホール電極（ビアホール導体）３１，３２とは非接触となるような領域に形成されている。 A via hole electrode (via hole conductor) 32 connected to the via hole electrode 31 is formed on the dielectric substrate f ′ at the same position on the dielectric substrate surface as the via hole electrode (via hole conductor) 31. Via these via-hole electrodes (via-hole conductors) 31 and 32, the connection portions of the first end portions of the first and second additional resonance electrodes 22 and 23 are connected to the open end of the resonance electrode 21. The third and fourth frequency adjusting electrodes 63 and 64 are formed in regions that are not in contact with the via hole electrodes (via hole conductors) 31 and 32.

本実施形態においては、上記の図１〜３に係る実施形態と同様な効果に加えて、第３及び第４の周波数調整電極６３，６４を挿入することにより、より正確に共振周波数設定が可能になる。また、第１及び第２の付加的共振電極２２，２３の開放端を第１のアース電極１０と第３及び第４の周波数調整電極６３，６４とでそれぞれ挟み込む構造となるので、第１及び第２の付加的共振電極２２，２３と第１のアース電極１０との間で形成される容量に加えて、第１及び第２の付加的共振電極２２，２３と第３及び第４の周波数調整電極６３，６４とでそれぞれ形成される容量により、より小型の共振器を得ることができる。 In the present embodiment, in addition to the same effects as those of the embodiments according to FIGS. 1 to 3 described above, the resonance frequency can be set more accurately by inserting the third and fourth frequency adjustment electrodes 63 and 64. become. Since the open ends of the first and second additional resonance electrodes 22 and 23 are sandwiched between the first ground electrode 10 and the third and fourth frequency adjustment electrodes 63 and 64, respectively, In addition to the capacitance formed between the second additional resonant electrodes 22, 23 and the first ground electrode 10, the first and second additional resonant electrodes 22, 23 and the third and fourth frequencies A smaller resonator can be obtained by the capacitance formed by the adjustment electrodes 63 and 64, respectively.

以上のように、周波数調整電極は、図４及び５の実施形態のように第１及び第２の付加的共振電極２２，２３の下方（すなわち第１のアース電極１０に近づく側）にあっても良いし、図６及び７の実施形態のように第１及び第２の付加的共振電極２２，２３の上方（すなわち共振電極２１に近づく側）にあっても良い。更には、図４及び５の実施形態と図６及び７の実施形態とを組み合わせて、第１及び第２の付加的共振電極２２，２３の上下双方に周波数調整電極（第１〜第４の周波数調整電極６１〜６４）を配置してもよい。 As described above, the frequency adjustment electrode is below the first and second additional resonance electrodes 22 and 23 (that is, on the side closer to the first ground electrode 10) as in the embodiment of FIGS. 4 and 5. Alternatively, it may be above the first and second additional resonant electrodes 22 and 23 (that is, on the side closer to the resonant electrode 21) as in the embodiment of FIGS. Further, the embodiment of FIGS. 4 and 5 and the embodiment of FIGS. 6 and 7 are combined to form frequency adjusting electrodes (first to fourth) on both the upper and lower sides of the first and second additional resonance electrodes 22 and 23. Frequency adjusting electrodes 61 to 64) may be arranged.

図８は本発明による積層型誘電体共振器の一実施形態を示す模式的分解斜視図である。図８は図１に対応する方向での模式的分解斜視図である。 FIG. 8 is a schematic exploded perspective view showing an embodiment of a laminated dielectric resonator according to the present invention. FIG. 8 is a schematic exploded perspective view in a direction corresponding to FIG.

本実施形態では、誘電体基板ｂ，ｃ間に同様な誘電体基板ｇが介在している。第１及び第２の付加的共振電極２２，２３が形成されている誘電体基板ｂ，ｇ間の誘電体基板間領域と共振電極２１の形成されている誘電体基板ｃ，ｄ間の誘電体基板間領域との間に存在する誘電体基板ｇ，ｃ間の誘電体基板間領域内に、第２の付加的共振電極２３の開放端に対応する部分を有する容量結合性の引き出し電極４１が形成されている。ここで、引き出し電極４１は、基板積層体の端面にまで延びており、該端面に形成された入出力電極５１と接続されている。容量結合性の引き出し電極４１は、第１の付加的共振電極２２の開放端に対応する部分を有するものであってもよい。 In the present embodiment, a similar dielectric substrate g is interposed between the dielectric substrates b and c. A dielectric between the dielectric substrates b and g on which the first and second additional resonant electrodes 22 and 23 are formed and a dielectric between the dielectric substrates c and d on which the resonant electrode 21 is formed A capacitively coupled lead electrode 41 having a portion corresponding to the open end of the second additional resonant electrode 23 in the inter-dielectric substrate region between the dielectric substrates g and c existing between the inter-substrate regions. Is formed. Here, the lead electrode 41 extends to the end face of the substrate laminate, and is connected to the input / output electrode 51 formed on the end face. The capacitively coupled lead electrode 41 may have a portion corresponding to the open end of the first additional resonant electrode 22.

本実施形態においては、上記の図１〜３に係る実施形態と同様な効果が得られる。 In the present embodiment, the same effects as those of the embodiments according to FIGS.

図９は本発明による積層型誘電体フィルタの一実施形態を示す模式的分解斜視図であり、図１０はその模式的斜視図である。図９は図１に対応する方向での模式的分解斜視図であり、図１０は図２に対応する方向での模式的斜視図である。 FIG. 9 is a schematic exploded perspective view showing an embodiment of a multilayer dielectric filter according to the present invention, and FIG. 10 is a schematic perspective view thereof. 9 is a schematic exploded perspective view in a direction corresponding to FIG. 1, and FIG. 10 is a schematic perspective view in a direction corresponding to FIG.

本実施形態は、上記図１〜３の実施形態の積層型誘電体共振器を２つ配列し且つ互いに隣接する積層型誘電体共振器同士を結合させてなる積層型誘電体フィルタ（バンドパスフィルタ）に係るものである。第１の積層型誘電体共振器に固有の部材は、図９〜１０において、上記図１〜３の実施形態の積層型誘電体共振器の部材の符号にＸを付して示されている。同様に、第２の積層型誘電体共振器に固有の部材は、図９〜１０において、上記図１〜３の実施形態の積層型誘電体共振器の部材の符号にＹを付して示されている。 The present embodiment is a multilayer dielectric filter (bandpass filter) in which two multilayer dielectric resonators of the embodiments of FIGS. 1 to 3 are arranged and adjacent multilayer dielectric resonators are coupled to each other. ). The members unique to the first multilayer dielectric resonator are shown in FIGS. 9 to 10 with X added to the reference numerals of the members of the multilayer dielectric resonator of the embodiment of FIGS. . Similarly, members unique to the second stacked dielectric resonator are shown in FIGS. 9 to 10 with Y being added to the reference numerals of the members of the stacked dielectric resonator of the embodiment of FIGS. Has been.

２つの積層型誘電体共振器につき共通の基板積層体（誘電体基板ａ〜ｅを積層してなるもの）が使用されている。両端すなわち２つの積層型誘電体共振器の第２の付加的共振電極２３Ｘ，２３Ｙにそれぞれ引き出し電極４０Ｘ，４０Ｙが接続されており、該引き出し電極４０Ｘ，４０Ｙは基板積層体の端面にまで延びており、該端面に形成された入出力電極５１Ｘ，５１Ｙと接続されている。尚、使用する積層型誘電体共振器の数は、２個に限定されるものではなく、３個以上であってもよい。その場合には、両端の積層型誘電体共振器についてのみ、第１及び第２の付加的共振電極の一方に結合された引き出し電極を設ければよい。 A common substrate laminated body (one obtained by laminating dielectric substrates a to e) is used for the two laminated dielectric resonators. Lead electrodes 40X and 40Y are connected to both ends, that is, the second additional resonant electrodes 23X and 23Y of the two stacked dielectric resonators, respectively, and the lead electrodes 40X and 40Y extend to the end face of the substrate laminate. The input / output electrodes 51X and 51Y formed on the end face are connected. Note that the number of stacked dielectric resonators used is not limited to two, and may be three or more. In that case, it is only necessary to provide an extraction electrode coupled to one of the first and second additional resonance electrodes only for the laminated dielectric resonators at both ends.

本実施形態によれば、小型でＱ値の高い積層型誘電体共振器を用いているので、小型でロスの少ない高性能なバンドパスフィルタを得ることができる。 According to the present embodiment, since a small-sized multilayer dielectric resonator having a high Q value is used, a high-performance band-pass filter that is small and has little loss can be obtained.

図１１は本発明による積層型誘電体フィルタの一実施形態を示す模式的分解斜視図である。図１１は図１に対応する方向での模式的分解斜視図である。 FIG. 11 is a schematic exploded perspective view showing an embodiment of a multilayer dielectric filter according to the present invention. FIG. 11 is a schematic exploded perspective view in a direction corresponding to FIG.

本実施形態は、上記図４及び５の実施形態の積層型誘電体共振器を２つ配列し且つ互いに隣接する積層型誘電体共振器同士を結合させてなる積層型誘電体フィルタ（バンドパスフィルタ）に係るものである。第１の積層型誘電体共振器に固有の部材は、図１１において、上記図４及び５の実施形態の積層型誘電体共振器の部材の符号にＸを付して示されている。同様に、第２の積層型誘電体共振器に固有の部材は、図１１において、上記図４及び５の実施形態の積層型誘電体共振器の部材の符号にＹを付して示されている。 In the present embodiment, a multilayer dielectric filter (bandpass filter) in which two multilayer dielectric resonators of the embodiments of FIGS. 4 and 5 are arranged and adjacent multilayer dielectric resonators are coupled to each other. ). In FIG. 11, members unique to the first multilayer dielectric resonator are shown by adding X to the reference numerals of the members of the multilayer dielectric resonator of the embodiments of FIGS. 4 and 5. Similarly, the members unique to the second multilayer dielectric resonator are shown in FIG. 11 with Y being added to the reference numerals of the members of the multilayer dielectric resonator of the embodiments of FIGS. Yes.

本実施形態においては、上記の図９〜１０に係る実施形態と同様な効果が得られ、更に上記図４及び５の実施形態において述べた効果が得られる。 In the present embodiment, the same effects as those of the embodiments according to FIGS. 9 to 10 can be obtained, and further, the effects described in the embodiments of FIGS. 4 and 5 can be obtained.

図１２は本発明による積層型誘電体フィルタの一実施形態を示す模式的分解斜視図である。図１２は図１に対応する方向での模式的分解斜視図である。 FIG. 12 is a schematic exploded perspective view showing an embodiment of a multilayer dielectric filter according to the present invention. FIG. 12 is a schematic exploded perspective view in a direction corresponding to FIG.

本実施形態は、上記図８の実施形態の積層型誘電体共振器を２つ配列し且つ互いに隣接する積層型誘電体共振器同士を結合させてなる積層型誘電体フィルタ（バンドパスフィルタ）に係るものである。第１の積層型誘電体共振器に固有の部材は、図１２において、上記図８の実施形態の積層型誘電体共振器の部材の符号にＸを付して示されている。同様に、第２の積層型誘電体共振器に固有の部材は、図１２において、上記図８の実施形態の積層型誘電体共振器の部材の符号にＹを付して示されている。 The present embodiment is a multilayer dielectric filter (bandpass filter) in which two multilayer dielectric resonators of the embodiment of FIG. 8 are arranged and adjacent multilayer dielectric resonators are coupled to each other. It is concerned. The members unique to the first multilayer dielectric resonator are shown in FIG. 12 by adding X to the reference numerals of the members of the multilayer dielectric resonator of the embodiment of FIG. Similarly, the members unique to the second multilayer dielectric resonator are shown in FIG. 12 with Y added to the reference numerals of the members of the multilayer dielectric resonator of the embodiment of FIG.

本実施形態においては、上記の図９〜１０に係る実施形態と同様な効果が得られる。 In the present embodiment, the same effects as those of the embodiments according to FIGS.

本発明による積層型誘電体共振器の一実施形態を示す模式的分解斜視図である。1 is a schematic exploded perspective view showing an embodiment of a multilayer dielectric resonator according to the present invention. 図１の積層型誘電体共振器の実施形態の模式的斜視図である。FIG. 2 is a schematic perspective view of an embodiment of the multilayer dielectric resonator of FIG. 1. 図２のＡ−Ａ’方向に沿った面で切断した模式的縦断面図である。FIG. 3 is a schematic longitudinal sectional view cut along a plane along the A-A ′ direction in FIG. 2. 本発明による積層型誘電体共振器の一実施形態を示す模式的分解斜視図である。1 is a schematic exploded perspective view showing an embodiment of a multilayer dielectric resonator according to the present invention. 図４の積層型誘電体共振器の実施形態の模式的縦断面図である。FIG. 5 is a schematic longitudinal sectional view of the embodiment of the multilayer dielectric resonator of FIG. 4. 本発明による積層型誘電体共振器の一実施形態を示す模式的分解斜視図である。1 is a schematic exploded perspective view showing an embodiment of a multilayer dielectric resonator according to the present invention. 図６の積層型誘電体共振器の実施形態の模式的縦断面図である。It is a typical longitudinal cross-sectional view of embodiment of the laminated dielectric resonator of FIG. 本発明による積層型誘電体共振器の一実施形態を示す模式的分解斜視図である。1 is a schematic exploded perspective view showing an embodiment of a multilayer dielectric resonator according to the present invention. 本発明による積層型誘電体フィルタの一実施形態を示す模式的分解斜視図である。1 is a schematic exploded perspective view showing an embodiment of a multilayer dielectric filter according to the present invention. 図９の積層型誘電体フィルタの実施形態の模式的斜視図である。FIG. 10 is a schematic perspective view of the embodiment of the multilayer dielectric filter of FIG. 9. 本発明による積層型誘電体フィルタの一実施形態を示す模式的分解斜視図である。1 is a schematic exploded perspective view showing an embodiment of a multilayer dielectric filter according to the present invention. 本発明による積層型誘電体フィルタの一実施形態を示す模式的分解斜視図である。1 is a schematic exploded perspective view showing an embodiment of a multilayer dielectric filter according to the present invention. 本発明による積層型誘電体共振器の一実施形態を示す模式的縦断面図である。1 is a schematic longitudinal sectional view showing an embodiment of a multilayer dielectric resonator according to the present invention. 本発明による積層型誘電体共振器の一実施形態を示す模式的縦断面図である。1 is a schematic longitudinal sectional view showing an embodiment of a multilayer dielectric resonator according to the present invention.

Explanation of symbols

ａ，ｂ，ｃ，ｄ，ｅ，ｆ，ｆ’，ｇ誘電体基板
１，２，３ビアホール電極（ビアホール導体）
１０第１のアース電極
１１第２のアース電極
２１，２１Ｘ，２１Ｙ共振電極
２２，２２Ｘ，２２Ｙ第１の付加的共振電極
２３，２３Ｘ，２３Ｙ第２の付加的共振電極
３１，３１Ｘ，３１Ｙビアホール電極（ビアホール導体）
３２，３２Ｘ，３２Ｙビアホール電極（ビアホール導体）
４０，４０Ｘ，４０Ｙ引き出し電極
４１，４１Ｘ，４１Ｙ容量結合性の引き出し電極
５０接続導体（外部接地電極）
５１，５１Ｘ，５１Ｙ入出力電極
６１，６１Ｘ，６１Ｙ第１の周波数調整電極
６２，６２Ｘ，６２Ｙ第２の周波数調整電極
６３第３の周波数調整電極
６４第４の周波数調整電極
７１，７２ビアホール電極（ビアホール導体） a, b, c, d, e, f, f ', g Dielectric substrate 1, 2, 3 Via hole electrode (via hole conductor)
DESCRIPTION OF SYMBOLS 10 1st earth electrode 11 2nd earth electrode 21,21X, 21Y Resonance electrode 22,22X, 22Y 1st additional resonance electrode 23,23X, 23Y 2nd additional resonance electrode 31,31X, 31Y Via-hole electrode (Via hole conductor)
32, 32X, 32Y Via hole electrode (via hole conductor)
40, 40X, 40Y Lead electrode 41, 41X, 41Y Capacitive coupling lead electrode 50 Connection conductor (external ground electrode)
51, 51X, 51Y Input / output electrodes 61, 61X, 61Y First frequency adjusting electrode 62, 62X, 62Y Second frequency adjusting electrode 63 Third frequency adjusting electrode 64 Fourth frequency adjusting electrode 71, 72 Via hole electrode ( Via-hole conductor)

Claims

A plurality of dielectric substrates are laminated so that the principal surfaces of adjacent dielectric substrates face each other to form a substrate laminate, and in the region between the adjacent dielectric substrates in the substrate laminate, A dielectric substrate main body formed by forming a film-like resonance electrode extending along the main surface of the dielectric substrate, wherein the resonance electrode is not formed in the main surface of the dielectric substrate or a region between the dielectric substrates. A ground electrode is formed on the surface or the region between the dielectric substrates, one end of the resonant electrode is connected to the ground electrode to be a short-circuited end, and the other end of the resonant electrode is the substrate laminate. A laminated dielectric resonator located in an inner dielectric substrate region and having an open end,
In one inter-dielectric substrate region existing between the dielectric substrate main surface or the inter-dielectric substrate region where the ground electrode is formed and the inter-dielectric substrate region where the resonance electrode is formed The film-like first and second additional resonance electrodes extending along the resonance electrode are formed,
The first and second additional resonant electrodes both have a first end and a second end, and the first and second additional resonant electrodes are between the one dielectric substrate. In the region, the first ends are connected to each other and extend in opposite directions from the first end toward the second end ;
Said first ends of the first and second additional resonance electrode is connected to the open end of the resonance electrode via a via hole electrode formed on the dielectric substrate, said first and second both the second end of the additional resonance electrode is an open end located within the said one dielectric substrate between regions of the substrate laminate,
The open end of the resonance electrode is located at a position equal to or less than one-eighth of the dimension of the substrate laminate from the center of the substrate laminate to the short-circuit end in the direction in which the resonance electrode extends. A laminated dielectric resonator, wherein the laminated dielectric resonator exists between the center of the substrate and a position not more than one-eighth of a dimension of the substrate laminate toward the side opposite to the short-circuit end .

2. The resonance electrode according to claim 1, wherein one end of the resonance electrode extends to an end face of the substrate laminate and is connected to the ground electrode via a connection conductor formed on the end face. Multilayer dielectric resonator.

2. The multilayer dielectric resonator according to claim 1, wherein one end of the resonance electrode is connected to the ground electrode via a via-hole electrode formed on the dielectric substrate.

The sum of the lengths of the first and second additional resonance electrodes is not less than one half of the dimension of the substrate stack in the extending direction of the first and second additional resonance electrodes. The multilayer dielectric resonator according to claim 1, wherein:

Present between the dielectric substrate major surface or a dielectric substrate region between said first and second additional said one resonance electrode is formed dielectric substrate between regions the earth electrode is formed In the inter-dielectric substrate region, first and second frequency adjustment electrodes having at least portions corresponding to the open ends of the first and second additional resonant electrodes are formed. 5. The laminated dielectric resonator according to claim 1 , wherein the second frequency adjustment electrode is connected to the ground electrode.

Characterized in that it is connected to the ground electrode via the first and second frequency adjustment electrodes connecting conductor formed on and end face extends to the end face of each of the substrate laminate wherein Item 6. The laminated dielectric resonator according to Item 5 .

6. The stacked dielectric resonance according to claim 5 , wherein each of the first and second frequency adjustment electrodes is connected to the ground electrode via a via-hole electrode formed on the dielectric substrate. vessel.

A dielectric substrate between regions present between said one dielectric substrate between an area where the said dielectric substrate between an area where the resonator electrode are formed first and second additional resonance electrodes are formed And at least portions corresponding to the open ends of the first and second additional resonant electrodes, respectively, and third and fourth frequency adjusting electrodes that are not in contact with the via-hole electrode are formed. The laminated dielectric resonator according to claim 1 , wherein the third and fourth frequency adjustment electrodes are each connected to the ground electrode.

Characterized in that it is connected to the ground electrode through the third and fourth frequency adjustment electrode connecting conductor formed on and end face extends to the end face of each of the substrate laminate wherein Item 9. The multilayer dielectric resonator according to Item 8 .

9. The stacked dielectric resonance according to claim 8 , wherein the third and fourth frequency adjustment electrodes are connected to the ground electrode via via-hole electrodes formed on the dielectric substrate, respectively. vessel.

An extraction electrode connected to one of the first and second additional resonance electrodes is formed in the region between the one dielectric substrate where the first and second additional resonance electrodes are formed. are, the extraction electrode is characterized in that it is connected to the extend to the end face of the substrate laminate, the input and output electrodes formed on the end face, according to any of claims 1 to 10 Laminated dielectric resonator.

The dielectric of the first and second of said interlevel dielectric substrate region and the one dielectric substrate between regions and the resonance electrode of the additional resonance electrodes are formed is formed or the earth electrode is formed In the inter-dielectric substrate region between the main substrate main surface or the inter-dielectric substrate region, there is a capacitively coupled lead electrode having a portion corresponding to one of the first and second additional resonant electrodes. 11. The electrode according to claim 1 , wherein the lead electrode extends to an end face of the substrate laminate and is connected to an input / output electrode formed on the end face. The laminated dielectric resonator as described.

A multi-layer dielectric filter comprising a plurality of multi-layer dielectric resonators according to any one of claims 1 to 12 , wherein the multi-layer dielectric resonators adjacent to each other are coupled to each other. The common substrate laminate is used for each type of dielectric resonator, and an extraction electrode coupled to one of the first and second additional resonance electrodes of each of the laminated dielectric resonators at both ends is formed. The lead-out electrode extends to an end face of the substrate laminate, and is connected to an input / output electrode formed on the end face.