JP4512448B2 - Passive components - Google Patents

Description

  The present invention relates to a passive component including a laminated dielectric filter that constitutes a resonance circuit in a microwave band of several hundred MHz to several GHz, and relates to a passive component that can suppress variation in electrical characteristics due to misalignment.

  In recent years, integrated circuits (ICs) have been highly integrated, and miniaturization of ICs has been progressing rapidly. Along with this, miniaturization of passive components such as a filter used around the IC is progressing. In order to reduce the size of the passive component, a laminated dielectric passive component using a dielectric substrate is effective.

  As shown in FIG. 17, a passive component 200, which is a conventional multilayer dielectric passive component, includes a third dielectric substrate 202 formed by laminating first to sixth dielectric layers S1 to S6. An input electrode 204 and an output electrode 206 formed on one main surface of the dielectric layer S3, and first to third resonance electrodes 208a to 208c formed on one main surface of the fourth dielectric layer S4; It has 1st-3rd inner-layer earth electrodes 210a-210c formed in one main surface of 5th dielectric material layer S5 (refer patent document 1).

  In this conventional example, the open ends 212a to 212c of the first to third resonance electrodes 208a to 208c and the first to third inner layer ground electrodes 210a to 210c are opposed to each other with the fourth dielectric layer S4 interposed therebetween. Has been placed. As a result, a capacitor having an area D is formed in the portion where the open end portions 212a to 212c and the first to third inner layer ground electrodes 210a to 210c overlap each other as shown in FIG.

JP-A-10-190309

  With respect to such passive components, in order to ensure a stable and high yield, it is important how to suppress manufacturing variations of the passive components. In this case, the main manufacturing variation includes stacking deviation.

  In the passive component 200 described above, when a misalignment occurs between the open ends 212a to 212c of the first to third resonance electrodes 208a to 208c and the first to third inner-layer ground electrodes 210a to 210c, Since D varies, the capacitance of the capacitor may vary. As a result, there is a problem that the filter characteristics of the passive component 200 vary greatly and the filter characteristics cannot be made desired.

  As described above, the conventional passive component has a problem that variation in electrical characteristics occurs due to stacking deviation.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a passive component that can suppress variation in electrical characteristics due to misalignment.

  Another object of the present invention is to stabilize electrical characteristics without being affected by the impedance of a via hole that electrically connects a resonance electrode and a ground terminal.

Passive component according to the present invention is a dielectric substrate, at least a first resonator electrode and the second resonance electrode is formed on the first form Narumen, first open end of the first resonance electrode and the second in passive component is innerlayer ground electrode for forming a second open end and the capacitance formed on the second form Narumen resonance electrodes, terminals of the passive components, only the lower surface of the dielectric substrate A terminal formed and electrically connected to the first resonance electrode and the second resonance electrode through via holes, respectively, a first short-circuit end of the first resonance electrode, and a second short-circuit of the second resonance electrode and a ground terminal electrically connected via the respective said an end innerlayer ground electrode via holes, wherein the first resonance electrode, in the first forming surface, the first side surface of the dielectric substrate And the first open end is front The first formation surface bends toward the second side surface adjacent to the first side surface of the dielectric substrate, and the second resonance electrode faces the first side surface of the dielectric substrate at the first formation surface. And the second open end portion is bent toward the third side surface facing the second side surface of the dielectric substrate on the first formation surface, and the inner layer is formed in parallel with the first resonance electrode. The ground electrode is formed at a position near the first side surface on the second formation surface, and is formed from a position near the second side surface of the dielectric substrate to a position near the third side surface, Is bent toward the fourth side surface facing the first side surface of the dielectric substrate on the second forming surface, and the other end portion is bent on the fourth forming surface of the dielectric substrate on the second forming surface. Fold to the side The bent portion of the first open end and the one end of the inner layer ground electrode intersect with each other across a dielectric, and the bent portion of the second open end and the inner layer ground electrode and the other end, you wherein the intersecting across the dielectric.

  First, a terminal electrically connected to the plurality of resonance electrodes and a ground terminal electrically connected to the inner layer ground electrode are formed on the lower surface of the dielectric substrate. For example, when the circuit board is mounted on a wiring board or the like, the terminals formed only on the lower surface of the dielectric substrate may be mounted on the wiring board by the surface mounting method. As a result, the mounting area of the passive component can be made smaller than in the case of side mounting.

  Since the terminal exists only on the lower surface of the dielectric substrate, the area of the plurality of electrodes can be reduced, and a stray capacitance is hardly formed between the terminal and the electrode. Therefore, the isolation characteristics of the passive component are improved. In addition, since it is not necessary to form electrodes on the side surfaces of the passive component, the manufacturing process is simplified and the manufacturing cost can be reduced. Furthermore, it becomes difficult to be influenced by the shield plate installed in the vicinity of the passive component and other adjacent components, and the variation in characteristics can be reduced.

  In addition, since the open end and the inner layer ground electrode intersect with each other through the dielectric, the open end and the inner layer ground electrode even if a stacking error occurs when manufacturing the passive component There is no change in the area of the intersection. For this reason, even if the stacking deviation occurs, the capacitance formed between the open end and the inner layer ground electrode does not vary. Therefore, variation in electrical characteristics due to stacking deviation can be suppressed.

  Further, by bending the open end portion on the first formation surface, the resonance electrode can be extended to a portion of the dielectric where no electrode is formed on the first formation surface. . Thereby, the resonator length of the resonator comprised from the said resonance electrode can be lengthened, for example, a passive component with a low resonant frequency is realizable.

  As described above, the resonator length can be increased only by bending the open end portion on the first forming surface, which is effective in reducing the size of the passive component.

Then, in the present invention, the said one end of the bent portion and the innerlayer ground electrode of the first open end, the dielectric intersects sandwiched therebetween in a cross shape, and said first open end The tip of the bent portion and the tip of the one end of the inner layer ground electrode are formed so as to protrude from each other, and the bent portion of the second open end and the other end of the inner layer ground electrode Ends intersect in a cross shape with the dielectric therebetween, so that the tip of the bent portion of the second open end and the tip of the other end of the inner-layer ground electrode protrude from each other. It may be formed .

In the present invention, the first open end portion is bent at approximately 90 ° toward the second side surface, and the second open end portion is bent at approximately 90 ° toward the third side surface, and the inner layer The one end of the ground electrode is bent at approximately 90 ° toward the fourth side surface, and the other end of the inner-layer ground electrode is bent at approximately 90 ° toward the fourth side surface. Good.

In the present invention, the first resonant electrode is the input-side resonance electrode, the second resonance electrode may meet output side resonance electrode. In the present invention, one or more resonance electrodes are formed between the first resonance electrode and the second resonance electrode in the first formation surface, and each open end portion of the one or more resonance electrodes is formed. May intersect with the inner-layer ground electrode across a dielectric.

Further, Oite the present invention, wherein the second shorting end of said first shorting end second resonance electrode of the first resonance electrode is electrically through a conductor formed on the first forming surface it may be connected in manner.

  By forming a ground terminal electrically connected to each short-circuited end of the plurality of resonance electrodes via a via hole on the lower surface of the dielectric substrate, the following effects can be achieved.

(1) The mounting area of the passive component can be made smaller than that in the case of side mounting.

(2) The isolation characteristics of passive components are improved.

(3) The manufacturing process of the passive component is simplified, and the manufacturing cost can be reduced.

(4) It becomes difficult to be affected by the shield plate installed in the vicinity of the passive component and other adjacent components, and the variation in characteristics can be reduced.

  By the way, when the short-circuit ends of the plurality of resonance electrodes and the ground terminal are electrically connected through the via holes, the length of the via holes is included in the resonator length of the resonator. Therefore, it is conceivable that the resonance frequency of the resonator fluctuates due to variations in the impedance of the via hole, resulting in variations in the electrical characteristics of the passive components.

  Therefore, if the short-circuit ends of the plurality of resonance electrodes are electrically connected via a conductor formed on the formation surface, the length of the via hole can be avoided from being included in the resonator length. For this reason, even if the impedance of the via hole varies, the electrical characteristics of the passive component can be stabilized without being affected by the impedance of the via hole.

  In the dielectric substrate, a filter unit having the plurality of resonance electrodes is formed at the upper or lower part of the plurality of dielectric layers in the stacking direction, and a non-equilibrium-balance conversion unit is formed at the other part. May be. Furthermore, the unbalanced-balanced conversion unit may be electrically connected to the input side and / or the output side of the filter unit through a connection unit.

  As described above, according to the passive component of the present invention, it is possible to suppress variation in electrical characteristics due to stacking deviation.

  Further, according to the passive component of the present invention, the electrical characteristics can be stabilized without being affected by the impedance of the via hole that electrically connects the resonant electrode and the ground terminal.

  Hereinafter, several embodiments of the passive component according to the present invention will be described with reference to FIGS.

  First, as shown in FIG. 1, the passive component 10A according to the first embodiment includes a plurality of dielectric layers (first to seventh dielectric layers S1 to S7: see FIG. 2) laminated and fired integrally. The dielectric substrate 12 is formed. Six terminals (ground terminals 16a, 16b, 16d, 16e, input terminal 16c and output terminal 16f) are exposed and formed only on the bottom surface 14f of the outer peripheral surface of the dielectric substrate 12, and the other four side surfaces 14a. 14d (side surfaces orthogonal to one main surface of the first to seventh dielectric layers S1 to S7 in FIG. 2) and the upper surface 14e are formed with only a dielectric.

  As shown in FIG. 2, the dielectric substrate 12 is configured by stacking first to seventh dielectric layers S <b> 1 to S <b> 7 in order from the top. These first to seventh dielectric layers S1 to S7 are composed of one or a plurality of layers.

  In addition, inner ground electrodes 18a and 18b are formed on one main surface of the second and sixth dielectric layers S2 and S6 among the plurality of dielectric layers S1 to S7.

  The dielectric substrate 12 includes a filter unit 24 including two quarter-wave resonators (the input-side resonator 20 and the output-side resonator 22). The filter unit 24 has an input side resonance electrode 26 and an output side resonance electrode 28 formed on one main surface of the fourth dielectric layer S4.

  One end of the input side resonance electrode 26 (an end formed at a position close to the third side surface 14c) and one end of the output side resonance electrode 28 (at a position close to the third side surface 14c). The formed end portions are electrically connected to the inner layer ground electrodes 18a and 18b through the via holes 30 and 32, respectively (see FIG. 3). That is, one end portion of the input-side resonance electrode 26 and one end portion of the output-side resonance electrode 28 constitute short-circuit end portions 26a and 28a, respectively.

  The other end of the input-side resonance electrode 26 and the end of the output-side resonance electrode 28 constitute open ends 26b and 28b, respectively. In this case, as shown in FIGS. 2 and 4, the open end portion 26b of the input-side resonant electrode 26 is on the fourth dielectric layer S4 and on the second side surface 14b (the side opposite to the third side surface 14c). It is formed so as to bend at 90 ° near the side of the first side surface 14a (the side surface opposite to the fourth side surface 14d and the output-side resonance electrode 28). On the other hand, the open end portion 28b of the output-side resonance electrode 28 is bent at 90 ° on the fourth dielectric layer S4 and near the second side surface 14b, and is formed to face the fourth side surface 14d. ing. In FIG. 4, the inner ground electrodes 42 and 46 of the third and fifth dielectric layers S3 and S5 are shown as projected images (see broken lines) projected onto the fourth dielectric layer S4.

  As shown in FIGS. 2 and 4, an input tap electrode 34 is formed from the input-side resonance electrode 26 toward the corner portions of the first and third side surfaces 14 a and 14 c of the dielectric substrate 12. The input tap electrode 34 is electrically connected to the input terminal 16c through the via hole 36 (see FIG. 3). An output tap electrode 38 is formed from the output-side resonance electrode 28 toward the corner portions of the third and fourth side surfaces 14 c and 14 d of the dielectric substrate 12. In this case, the output tap electrode 38 is electrically connected to the output terminal 16f through the via hole 40 (see FIG. 3).

  As shown in FIG. 2, one main surface of the third dielectric layer S3 is opposed to the open end portions 26b and 28b of the input-side resonance electrode 26 and the output-side resonance electrode 28, and the dielectric substrate 12 has a first surface. An inner-layer ground electrode 42 formed in the vicinity of the second side surface 14 b and a coupling adjustment electrode 44 for adjusting the degree of coupling between the input-side resonator 20 and the output-side resonator 22 are formed.

  On one main surface of the fifth dielectric layer S5, an inner layer ground electrode 46 is formed adjacent to the second side surface 14b of the dielectric substrate 12.

  In this case, the two inner layer ground electrodes 42 and 46 are formed in parallel to the second side surface 14b at positions close to the second side surface 14b, but both end portions 42a and 42b of the inner layer ground electrode 42 are The third and fifth dielectric layers S3 and S5 are bent at 90 ° in front of the first and fourth side surfaces 14a and 14d, and extend toward the third side surface 14c. That is, the inner-layer ground electrodes 42 and 46 described above have a substantially U-shape, and as shown in FIGS. 2 and 4, the end portions 42a, 42b, 46a and 46b of the electrodes are input-side resonance electrodes. 26 and the open end portions 26b and 28b of the output side resonance electrode 28 are overlapped.

  Specifically, the open end portion 26b of the input-side resonance electrode 26 is formed so as to protrude from the first end portion 42a toward the first side surface 14a, and the first end portion 42a is the third end portion 42a. It is formed so as to protrude from the open end portion 26b toward the side surface 14c. That is, the open end portion 26b of the input side resonance electrode 26 and the first end portion 42a of the inner layer ground electrode 42 are overlapped in a substantially cross shape as shown in FIG.

  On the other hand, the open end portion 26b of the input side resonance electrode 26 and the first end of the inner layer ground electrode 42 described above also apply to the open end portion 28b of the output side resonance electrode 28 and the second end portion 42b of the inner layer ground electrode 42. Similar to the case of the portion 42a, they overlap in a substantially cross shape.

  Further, the first and second end portions 46 a and 46 b of the inner layer ground electrode 46 are also open end portions 26 b of the input side resonance electrode 26 and the open end of the output side resonance electrode 28, as in the case of the inner layer ground electrode 42. It overlaps with the portion 28b in a substantially cross shape. That is, the first end portion 46 a overlaps the open end portion 26 b of the input side resonance electrode 26 substantially perpendicularly. The second end portion 46 b overlaps with the open end portion 28 b of the output-side resonance electrode 28 substantially perpendicularly.

  The open ends 26b and 28b of the input side resonance electrode 26 and the output side resonance electrode 28 intersect with the projected images of the first and second ends 42a, 42b, 46a and 46b of the inner layer ground electrodes 42 and 46. The angle to be performed is not limited to the above-described 90 °, and may be any angle that can intersect on the fourth dielectric layer S4. Therefore, the open end portions 26b and 28b of the input side resonance electrode 26 and the output side resonance electrode 28 may be bent at any angle as long as they do not contact the first to fourth side surfaces 14a to 14d. Further, the open end portions 26b and 28b may be bent any number of times as long as they do not contact the first to fourth side surfaces 14a to 14d. On the other hand, the first and second end portions 42a, 42b, 46a, 46b of the inner layer ground electrodes 42, 46 may be bent any number of times at any angle.

  As shown in FIGS. 2 and 3, the inner layer ground electrodes 42 and 46 are electrically connected to the inner layer ground electrodes 18 a and 18 b and the ground terminals 16 a and 16 d through via holes 48 and 50. Further, the inner layer ground electrode 18b formed on the sixth dielectric layer S6 is electrically connected to the ground terminals 16b and 16e through the via holes 52 and 54.

  Next, the difference between the passive component 10A according to the first embodiment and the passive components 58A to 58D (comparative examples) shown in FIGS. 5A to 6B will be described.

  As shown in FIG. 5A, in the passive component 58A according to the first comparative example, the input-side resonance electrode 60 and the output-side resonance electrode 62 are formed in a substantially linear shape, and the open ends 60b, 62b have 2 tips. The inner layer ground electrodes 64 and 66 are formed so as to overlap each other.

  In this case, for example, when a stacking shift occurs in the longitudinal direction of the input-side resonance electrode 60 and the output-side resonance electrode 62 (the direction of arrow A in FIG. 5A), the input-side resonance electrode 60 that overlaps with the inner-layer ground electrodes 64 and 66 is opened. The length (overlapping length) da of the end 60b and the open end 62b of the output-side resonance electrode 62 changes. As a result, the area D of the overlapping portion between the inner layer ground electrodes 64 and 66 and the open end portions 60b and 62b changes, and the capacitance formed by the inner layer ground electrodes 64 and 66 and the open end portions 60b and 62b is reduced. Change. Therefore, it is conceivable that the electrical characteristics (for example, pass band, resonance frequency) of the passive component 58A vary greatly.

  Note that, when a stacking error occurs in a direction orthogonal to the longitudinal direction (arrow B direction), the overlap length da does not change much. Therefore, the variation in the electrical characteristics of the passive component 58A due to the stacking deviation is smaller than the variation in the electrical characteristics due to the stacking deviation in the arrow A direction.

  Further, in the passive component 58B according to the second comparative example, as shown in FIG. 5B, the open end portions 60b and 62b of the input-side resonance electrode 60 and the output-side resonance electrode 62 are bent at approximately 90 °, and the direction of the arrow B It is formed to extend. On the other hand, both end portions 64a, 64b, 66a, 66b of the inner layer ground electrodes 64, 66 are bent at approximately 90 ° and overlapped with the tips of the open end portions 60a, 62b.

  In the passive component 58B, when a stacking shift occurs in the arrow B direction, the overlapping lengths db1 and db2 of the open end portions 60a and 62b with respect to the end portions 64a, 64b, 66a, and 66b change in the arrow B direction. As a result, the areas D1 and D2 of the overlapping portions of the end portions 64a, 64b, 66a and 66b and the open end portions 60a and 62b change, and are formed by the inner layer ground electrodes 64 and 66 and the open end portions 60a and 62b. The electrostatic capacity varies. Therefore, it can be considered that variations occur in the electrical characteristics of the passive component 58B.

  In this passive component 58B, when a stacking shift occurs in the direction of arrow A, the overlap lengths db1 and db2 do not change so much, and the variation in the electrical characteristics of the passive component 58B due to the stacking shift is indicated by the arrow B. It is smaller than the variation in electrical characteristics due to misalignment in the direction.

  Further, the passive components 58C and 58D according to the third and fourth comparative examples extend in the arrow A direction between the input-side resonance electrode 60 and the output-side resonance electrode 62 as shown in FIGS. 6A and 6B. An existing resonance electrode 68 is provided, and the tip of the open end 68 b of the resonance electrode 68 overlaps the inner layer ground electrodes 64 and 66. As described above, also in the passive components 58C and 58D having three or more resonance electrodes, when the misalignment occurs, the area D3 of the overlapping portion between the open end portion 68b of the resonance electrode 68 and the inner layer ground electrodes 64 and 66 also varies. Therefore, it is conceivable that the electrical characteristics of the passive components 58C and 58D further vary.

  As described above, in any of the passive components 58A to 58D according to the first to fourth comparative examples, when a stacking deviation occurs in the direction of the arrow A or the direction of the arrow B, the electrical characteristics change greatly, and the electrical components There is a problem that the target characteristics vary.

  On the other hand, as shown in FIG. 4, the passive component 10A according to the first embodiment is a projection image of the first and second end portions 42a, 42b, 46a, 46b of the inner layer ground electrodes 42, 46. The open end portion 26b of the input side resonance electrode 26 and the open end portion 28b of the output side resonance electrode 28 are formed so as to intersect with each other. Thus, even when a stacking error occurs in the direction of the arrow A and the direction of the arrow B when the passive component 10A is manufactured, the portion where the input side resonance electrode 26 and the output side resonance electrode 28 overlap with the inner layer ground electrodes 42 and 46 The area D does not change. Therefore, fluctuations in electrical characteristics due to stacking deviation can be suppressed. The fact that fluctuations in electrical characteristics can be suppressed means that even if the distance between electrodes arranged in the stacking direction and the area of each electrode are reduced, the same characteristic fluctuation can be suppressed. The passive component 10A having the following electrical characteristics can be obtained, and the passive component 10A can be reduced in size and thickness.

  Further, the resonator lengths of the input-side resonator 20 constituting the input-side resonance electrode 26 and the output-side resonator 22 constituting the output-side resonance electrode 28 can be increased only by forming the open ends 26b and 28b by bending. Thus, the passive component 10A having a lower frequency can be realized. Thereby, size reduction of 10 A of passive components can be achieved.

  Next, a modified example (first modified example) of the passive component 10A according to the first embodiment will be described with reference to FIG.

  As shown in FIG. 7, the passive component 10 </ b> Aa according to the first modification has a resonance electrode 70 between the input-side resonance electrode 26 and the output-side resonance electrode 28 between the input-side resonance electrode 26 and the output-side resonance electrode 28. Except that the open end portion 70b of the resonance electrode 70 and the central portions of the inner layer ground electrodes 42 and 46 overlap each other in a substantially cross shape. (See FIG. 4).

  In this case, the short-circuit end portion 70 a of the resonance electrode 70 is electrically connected to the inner layer ground electrodes 18 a and 18 b (see FIGS. 2 and 3) via the via hole 72.

  Even in this passive component 10Aa, even if a stacking shift occurs, the area D3 of the overlapping portion between the open end portion 70b and the inner layer ground electrodes 42 and 46 does not change, so that the electrical characteristics of the passive component 10Aa change due to the stacking shift. Can be suppressed.

  In addition, since it is possible to suppress variations in the electrical characteristics of the passive component 10Aa simply by intersecting the resonance electrode 70 and the projected images of the inner-layer ground electrodes 42 and 46, the passive component 10Aa having three or more resonance electrodes can be obtained. It can be easily realized.

  Next, a passive component 10B according to a second embodiment will be described with reference to FIGS. The same components as those of the passive component 10A according to the first embodiment (see FIGS. 1 to 4) will be described with the same reference numerals.

  As shown in FIG. 8, the passive component 10 </ b> B according to the second embodiment includes a short-circuit end portion 26 a of the input-side resonance electrode 26 and a short-circuit end portion 28 a of the output-side resonance electrode 28 via the short-circuit electrode 74. Except for being electrically connected, it is the same as the passive component 10A (see FIG. 4) according to the first embodiment.

  In the passive component 10 </ b> A according to the first embodiment shown in FIGS. 1 to 4, the short-circuit electrode 74 is not formed. In this case, the input-side resonator 20 and the output-side resonator 22 are electrically connected via the via holes 30 and 32 and the inner layer ground electrodes 18a and 18b. Therefore, the lengths of the via holes 30 and 32 are included in the resonator lengths of the input-side resonator 20 and the output-side resonator 22.

  In this case, due to the filling amount of the conductive material filled in the via holes 30 and 32, that is, the variation in the conductivity of the via holes 30 and 32 and the stacking deviation of the via holes 30 and 32 for each of the dielectric layers S4 to S7. It is conceivable that the impedance of the via holes 30 and 32 varies. It is also conceivable that the impedance of the via holes 30 and 32 varies due to the stacking deviation between the input side resonance electrode 26 and the output side resonance electrode 28 and the via holes 30 and 32.

  As described above, since the lengths of the via holes 30 and 32 are included in the resonator lengths of the input-side resonator 20 and the output-side resonator 22, the input-side resonator 20 and the output-side resonator 22 are changed by the impedance change. There is a concern that the resonance frequency fluctuates and variations occur in the electrical characteristics of the passive component 10A.

  On the other hand, in the passive component 10B according to the second embodiment, as shown in FIG. 8, the short-circuit end of the input-side resonance electrode 26 is formed by the short-circuit electrode 74 formed on the fourth dielectric layer S4. Since the portion 28a and the short-circuited end portion 28a of the output-side resonance electrode 28 are electrically connected, the lengths of the via holes 30 and 32 are equal to the resonator lengths of the input-side resonator 20 and the output-side resonator 22. It is never included. Thereby, regardless of variations in the impedance of the via holes 30 and 32, fluctuations in the resonance frequency of the input-side resonator 20 and the output-side resonator 22 can be suppressed. Therefore, the electrical characteristics of the passive component 10B can be further stabilized.

  Next, a modified example (second modified example) of the passive component 10B according to the second embodiment will be described with reference to FIG.

  As shown in FIG. 9, the passive component 10Ba according to the second modification includes a short-circuit end portion 26a of the input-side resonance electrode 26, a short-circuit end portion 70a of the resonance electrode 70, and a short-circuit end portion 28a of the output-side resonance electrode 28. These are the same as the passive component 10 </ b> Aa (see FIG. 7) according to the first modification, except that they are electrically connected by the short-circuit electrode 74.

  Since the passive component 10Ba is also electrically connected between the short-circuited end portions 26a, 70a, and 28a by the short-circuit electrode 74, the resonator lengths of the input-side resonator 20 and the output-side resonator 22 are connected to the via holes 30 and 32. Length is never included. Therefore, fluctuations in the resonance frequency of the input-side resonator 20 and the output-side resonator 22 can be suppressed regardless of variations in the impedance of the via holes 30 and 32. Therefore, the electrical characteristics of the passive component 10Ba can be stabilized.

  In addition, since the variation in the electrical characteristics of the passive component 10Ba can be suppressed simply by connecting the short-circuit end portion 70a of the resonance electrode 70 to the short-circuit electrode 74, the passive component 10Ba having three or more resonance electrodes can be easily formed. Can be realized.

  Next, a passive component 10C according to a third embodiment will be described with reference to FIGS. The same components as those of the passive components 10A and 10B (see FIGS. 1 to 9) according to the first and second embodiments will be described with the same reference numerals.

  The passive component 10C includes a conversion unit 86 and a connection unit 88, which will be described later, in addition to the filter unit 24. The passive component 10C has a non-balanced type on the input side and a balanced type on the output side. Different from the passive components 10A and 10B according to the embodiment.

  First, as shown in FIG. 10, the passive component 10 </ b> C forms the dielectric substrate 12 by laminating and integrating the first to twelfth dielectric layers S <b> 1 to S <b> 12 (see FIG. 11). Then, six terminals (balanced output terminals 16g and 16i, ground terminals 16h and 16k, a DC input terminal 16j and an unbalanced input terminal 16l) are formed on the bottom surface 14f, and the other four side surfaces 14a to 14d and Only the dielectric is formed on the upper surface 14e.

  In the dielectric substrate 12, as shown in FIG.11 and FIG.12, the filter part 24 which has the input side resonance electrode 26 and the output side resonance electrode 28, and several stripline formed near the 1st side surface 14a. A non-equilibrium-balance conversion unit (hereinafter referred to as a conversion unit 86 for convenience) having 80, 82, and 84, and a connection unit 88 for connecting the filter unit 24 and the conversion unit 86 are formed.

  The dielectric substrate 12 is configured by stacking a first dielectric layer S1 to a twelfth dielectric layer S12 in order from the top. These first to twelfth dielectric layers S1 to S12 are composed of one or a plurality of layers.

  The filter unit 24 and the conversion unit 86 are respectively formed on the dielectric substrate 12 in regions separated vertically in the stacking direction of the dielectric layers S1 to S12. For example, the filter part 24 is formed in the upper part in the stacking direction of the dielectric layers S1 to S12, the conversion part 86 is formed in the lower part in the stacking direction, and the connection part 88 is formed therebetween. Has been.

  That is, the filter unit 24 is formed from the first dielectric layer S3 to the fourth dielectric layer S4, the conversion unit 86 is formed in the seventh to eleventh dielectric layers S7 to S11, and the fifth dielectric layer A connection portion 88 is formed in the layer S5.

  Inside this dielectric substrate 12, inner ground electrodes 18a and 18b are formed on one main surface of the second and eleventh dielectric layers S2 and S11, and the sixth and ninth dielectric layers S6 and S9 are formed. Inner layer ground electrodes 18c and 18d are also formed on one main surface. In this case, the inner-layer ground electrode 18 c is formed for the purpose of isolation between the filter unit 24 and the conversion unit 86.

  The inner layer ground electrodes 18a to 18d, the inner layer ground electrode 42 formed on the third dielectric layer S3, and the inner layer ground electrode 46 formed on the fifth dielectric layer are electrically connected via the via holes 48 and 50. Connected. The inner layer ground electrode 18b is electrically connected to the ground terminals 16h and 16k via the via holes 52 and 54.

  In addition to the inner ground electrode 42, a coupling adjustment electrode 44 for adjusting the degree of coupling between the input-side resonator 20 and the output-side resonator 22 is formed on one main surface of the third dielectric layer S3. Has been.

  An input-side resonance electrode 26 and an output-side resonance electrode 28 are formed on one main surface of the fourth dielectric layer S4. In this case, the input-side resonance electrode 26 is formed at a position near the fourth side surface 14d, and the output-side resonance electrode 28 is formed at a position near the first side surface 14a.

  The short-circuit ends 26a and 28a of the resonance electrodes 26 and 28 are electrically connected to each other via a short-circuit electrode 74 formed on the fourth dielectric layer S4. The short-circuit electrode 74 is electrically connected to the inner-layer ground electrodes 18a to 18d through the two via holes 30 and 32.

  Further, as shown in FIGS. 11 and 13, the open end portion 26b of the input side resonance electrode 26 is bent at 90 ° on the fourth dielectric layer S4 and at a position near the second side surface 14b. It extends toward the fourth side surface 14d. The open end 28b of the output-side resonance electrode 28 is bent at 90 ° on the fourth dielectric layer S4 and near the second side surface 14b, and extends toward the first side surface 14a. . As shown in FIG. 13, the open ends 26b and 28b intersect the projected images of the first and second ends 42a, 42b, 46a and 46b of the inner layer ground electrodes 42 and 46, respectively.

  An input tap electrode 34 is drawn from the input side resonance electrode 26 on one main surface of the fourth dielectric layer S4 and extends to the corners of the third and fourth side surfaces 14c and 14d. Yes. The terminal portion of the input tap electrode 34 is electrically connected to the unbalanced input terminal 16l through the via hole 36.

  On one main surface of the fifth dielectric layer S5, in addition to the inner ground electrode 46 described above, the connection electrode 90 constituting the connection portion 88 in the central portion of the one main surface is provided on the output-side resonance electrode 28. It is formed so as to overlap a part of. The connection electrode 90 performs capacitive coupling with the output-side resonance electrode 28.

  In addition, a region for insulation is formed in the central portion of the inner layer ground electrode 18c on one main surface of the sixth dielectric layer S6, and the fifth hole is formed by a via hole 92 formed through the region. The connection electrode 90 formed on one main surface of the dielectric layer S5 and the first strip line 80 formed on one main surface of the seventh dielectric layer S7 are electrically connected.

  A first strip line 80 constituting the conversion unit 86 is formed at a position near the first side surface 14a in one main surface of the seventh dielectric layer S7. The first strip line 80 is developed in a spiral shape from one end 94, and is further arranged in a line-symmetrical position with respect to the one end 94 (a line-symmetrical position with respect to a line segment m connecting the ground terminals 16h and 16k). The other end 96 is spirally converged. In the first strip line 80, the connection electrode 90 is electrically connected via the via hole 92 at the one end 94 or a position near the one end 94 (connection position 98).

  Further, second and third strip lines 82 and 84 constituting the conversion unit 86 are formed on one main surface of the eighth dielectric layer S8. The second stripline 82 extends from one end 100 corresponding to the one end 94 in the first stripline 80 to a position facing the first balanced output terminal 16i in the eighth dielectric layer S8. And the third strip line 84 extends from one end 102 corresponding to the other end 96 of the first strip line 80 to the eighth dielectric layer S8. It has a shape developed spirally toward a position facing the second balanced output terminal 16g.

  In particular, the spiral shapes of the second and third strip lines 82 and 84 are line-symmetric with each other (line symmetry with respect to the line segment m), and the physical lengths are substantially the same.

  Then, at the other end 104 of the second strip line 82 or at a position in the vicinity of the other end 104 (connection position 106), the second strip line 82 and the first balanced output terminal 16i are electrically connected via the via hole 108. The third strip line 84 and the second balanced output terminal 16g via the via hole 114 at the other end 110 of the third strip line 84 or a position near the other end (connection position 112). Are electrically connected.

  Further, a DC electrode 116 is formed on one main surface of the tenth dielectric layer S10, and the DC electrode 116 is electrically connected to the DC input terminal 16j through the via hole 118. In this case, the inner layer ground electrode 18d electrically separates the first to third strip lines 80 to 84 and the DC electrode 116, and the inner layer ground electrode 18b includes the five terminals 16g to 16i, 16k, 16l and the DC electrode 116. And are electrically separated.

  Also, two electrically insulated regions are respectively formed in the inner layer ground electrode 18d on the one main surface of the ninth dielectric layer S9 in the portion near the first side surface 14a. Then, the one end 100 in the second strip line 82 or a position near the one end 100 (connection position 120) and the DC electrode 116 form a region near the third side surface 14c in the two insulated regions. It is electrically connected through a via hole 122 that penetrates. In addition, the DC electrode 116 and the one end 102 in the third strip line 84 or a position in the vicinity of the one end 102 (connection position 124) are located in the region near the second side surface 14b. It is electrically connected through a via hole 126 that penetrates.

  Thereby, as shown in FIG. 14, a DC power source (not shown) is connected to the second and third strip lines 82 and 84 via the DC input terminal 16j. Further, the DC electrode 116 has a capacitance C formed between the inner layer ground electrodes 18b and 18d (GND).

  Next, the difference between the passive component 10C according to the third embodiment and the passive component 130 (fifth comparative example) shown in FIGS. 15 and 16 will be described.

  In the passive component 130 according to the fifth comparative example, the input-side resonance electrode 26 and the output-side resonance electrode 28 are substantially linear, and the open ends 26b, 28b and the inner-layer ground electrodes 42, 46 overlap each other. The passive component 130 is different from the passive component 10C (see FIGS. 11 and 13) according to the third embodiment in that the passive component 130 does not have the short-circuit electrode 74.

  In this case, since the open ends 26b, 28b and the inner layer ground electrodes 42, 46 overlap, the overlap length d changes due to the stacking error, and the open ends 26b, 28b overlap with the inner layer ground electrodes 42, 46. The area D of the portion changes. As a result, it is conceivable that the capacitance between the open end portions 26b and 28b and the inner ground electrodes 42 and 46 varies, resulting in variations in the electrical characteristics of the passive component 130.

  In addition, since the short-circuit electrode 74 is not provided, the lengths of the via holes 30 and 32 are included in the resonator lengths of the input-side resonance electrode 26 and the output-side resonance electrode 28. For this reason, there is a concern that the impedance of the via holes 30 and 32 varies, the resonance frequencies of the input-side resonator 20 and the output-side resonator 22 fluctuate, and the electrical characteristics of the passive component 130 vary.

  On the other hand, as shown in FIG. 13, the passive component 10C according to the third embodiment is a projection image of the first and second end portions 42a, 42b, 46a, 46b of the inner layer ground electrodes 42, 46. The open end portion 26b of the input side resonance electrode 26 and the open end portion 28b of the output side resonance electrode 28 are formed so as to intersect with each other. Thereby, even when a stacking error occurs in the direction of the arrow A and the direction of the arrow B when the passive component 10C is manufactured, the open end portion 26b of the input side resonance electrode 26 and the open end portion 28b of the output side resonance electrode 28 are connected to the inner layer. The area D of the portion overlapping with the ground electrodes 42 and 46 does not change. Thereby, the fluctuation | variation of the electrical property by lamination | stacking deviation can be suppressed. As a result, even if the distance between the electrodes arranged in the stacking direction and the area of each electrode are reduced, the same characteristic variation can be suppressed, and the passive component 10C can be reduced in size and thickness.

  Further, in the passive component 10C according to the third embodiment, the short-circuit end portion 26a of the input-side resonance electrode 26 and the short-circuit end portion 28a of the output-side resonance electrode 28 are electrically connected by the short-circuit electrode 74. The lengths of the via holes 30 and 32 may not be included in the resonator lengths of the input-side resonator 20 and the output-side resonator 22. Thereby, regardless of variations in the impedance of the via holes 30 and 32, fluctuations in the resonance frequency of the input-side resonator 20 and the output-side resonator 22 can be suppressed. Therefore, the electrical characteristics of the passive component 10C can be further stabilized.

  The passive component 10C according to the third embodiment is not limited to the arrangement of the resonance electrodes 26 and 28 shown in FIGS. For example, in the electrode arrangement (see FIGS. 4 and 7 to 9) of the resonance electrodes 26, 28, and 70 described in the passive components 10A and 10B according to the first and second embodiments, the output tap electrode 38 is removed. It is also possible to adopt an electrode arrangement.

  Note that the passive component according to the present invention is not limited to the above-described embodiment, and various configurations can be adopted without departing from the gist of the present invention.

It is a perspective view which shows the passive component which concerns on 1st Embodiment. It is a disassembled perspective view which shows the passive component which concerns on 1st Embodiment. It is sectional drawing which shows the passive component which concerns on 1st Embodiment. It is the top view which projected the inner layer earth electrode formed in the 3rd and 5th dielectric layer on one main surface of the 4th dielectric layer. FIG. 5A is a plan view showing an open end portion of the resonant electrode in the passive component according to the first comparative example, and FIG. 5B shows an open end portion of the resonant electrode in the passive component according to the second comparative example. FIG. FIG. 6A is a plan view showing an open end portion of a resonance electrode in the passive component according to the third comparative example, and FIG. 6B shows an open end portion of the resonance electrode in the passive component according to the fourth comparative example. FIG. It is a top view which shows one main surface of the 4th dielectric material layer among the passive components which concern on a 1st modification. It is a top view which shows the passive component which concerns on 2nd Embodiment. It is a top view which shows one main surface of the 4th dielectric layer among the passive components which concern on a 2nd modification. It is a perspective view which shows the passive component which concerns on 3rd Embodiment. It is a disassembled perspective view which shows the passive component which concerns on 3rd Embodiment. It is sectional drawing which shows the passive component which concerns on 3rd Embodiment. It is a top view which shows the part of a resonant electrode among the passive components which concern on 3rd Embodiment. It is a circuit diagram which shows the conversion part among the passive components which concern on 3rd Embodiment. It is a disassembled perspective view which shows the passive component which concerns on a 5th comparative example. It is a top view which shows the part of a resonant electrode among the passive components which concern on a 5th comparative example. It is a disassembled perspective view which shows the conventional passive component. It is a top view which shows the open end part of the resonance electrode among the conventional passive components.

Explanation of symbols

10A to 10C, 58A to 58D, 130 ... Passive component 12 ... Dielectric substrate 14a to 14d ... Side face 14e ... Top face 14f ... Bottom face 16a to 16l ... Terminals 18a, 18b, 42, 46 ... Inner layer ground electrode 20 ... Input side resonator DESCRIPTION OF SYMBOLS 22 ... Output side resonator 24 ... Filter part 26 ... Input side resonance electrode 26a, 28a ... Short-circuit end part 26b, 28b ... Open end part 28 ... Output side resonance electrode 30, 32, 36, 40, 48, 50, 52, 54 ... Via hole 34 ... Input tap electrode 38 ... Output tap electrode 44 ... Coupling adjustment electrode 42a, 42b, 46a, 46b ... End 74 ... Short-circuit electrode

Claims (7)

A dielectric substrate, at least a first resonator electrode and the second resonance electrode is formed on the first form Narumen, second open end of the first open end and the second resonance electrode of the first resonance electrode in passive component is innerlayer ground electrode formed on the second form Narumen for forming a capacitance and,
The passive component terminal is formed only on the lower surface of the dielectric substrate, and is electrically connected to the first resonance electrode and the second resonance electrode via via holes , respectively , and the first resonance electrode and a ground terminal electrically connected through the innerlayer ground via-hole in the electrode and the second short end of the first short-circuit end and the second resonance electrode,
The first resonant electrode is formed on the first formation surface toward the first side surface of the dielectric substrate, and the first open end portion is formed on the first formation surface of the dielectric substrate. Bend toward the second side adjacent to one side,
The second resonance electrode is formed on the first formation surface in parallel with the first resonance electrode toward the first side surface of the dielectric substrate, and the second open end is the first opening. Bends toward the third side surface of the dielectric substrate facing the second side surface of the dielectric substrate;
The inner layer ground electrode is formed at a position near the first side surface on the second forming surface, and is formed from a position near the second side surface of the dielectric substrate to a position near the third side surface, and , One end portion is bent toward the fourth side surface facing the first side surface of the dielectric substrate on the second formation surface, and the other end portion is bent on the second formation surface on the dielectric substrate. Bend towards the fourth side,
The bent portion of the first open end and the one end of the inner layer ground electrode intersect with each other across a dielectric, and the bent portion of the second open end and the other of the inner layer ground electrode Passive component characterized in that the end of the crossing with a dielectric sandwiched between . In the passive component according to claim 1 Symbol placement,
The one end of the bent portion and the innerlayer ground electrode of the first open end, said across the dielectric crisscross shape, the tip portion of the bent portion of the first open end And the tip of the one end of the inner layer ground electrode are formed so as to protrude,
The bent portion of the second open end and the other end of the inner-layer ground electrode intersect in a cross shape with the dielectric interposed therebetween, and the tip of the bent portion of the second open end And a tip of the other end of the inner layer ground electrode so as to protrude from each other . The passive component according to claim 2 ,
The first open end is bent at approximately 90 ° toward the second side surface,
The second open end is bent at approximately 90 ° toward the third side surface,
The one end of the inner layer ground electrode is bent at approximately 90 ° toward the fourth side surface,
2. The passive component according to claim 1, wherein the other end of the inner layer ground electrode is bent at approximately 90 ° toward the fourth side surface. In the passive component of any one of Claims 1-3 ,
The passive component, wherein the first resonance electrode is an input-side resonance electrode , and the second resonance electrode is an output-side resonance electrode. In the passive component of any one of Claims 1-4,
Of the first formation surface, one or more resonance electrodes are formed between the first resonance electrode and the second resonance electrode,
Each of the open ends of the one or more resonance electrodes intersects with the inner-layer ground electrode with a dielectric interposed therebetween. The passive component according to claim 1,
The first short-circuit end portion of the first resonance electrode and the second short-circuit end portion of the second resonance electrode are electrically connected via a conductor formed on the first formation surface. Characteristic passive component. In the passive component according to any one of claims 1 to 6 ,
A passive component comprising, in the dielectric substrate, a non-equilibrium-balance conversion unit, and a connection unit for electrically connecting the non-balance-balance conversion unit and the internal electrode of the passive component.

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