JP4985795B2 - Solar power generation apparatus and solar power generation system - Google Patents

Solar power generation apparatus and solar power generation system Download PDF

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JP4985795B2
JP4985795B2 JP2010018765A JP2010018765A JP4985795B2 JP 4985795 B2 JP4985795 B2 JP 4985795B2 JP 2010018765 A JP2010018765 A JP 2010018765A JP 2010018765 A JP2010018765 A JP 2010018765A JP 4985795 B2 JP4985795 B2 JP 4985795B2
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power generation
solar power
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solar cell
semiconductor switch
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JP2011159715A (en
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伸二 佐藤
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Sanken Electric Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/50—Photovoltaic [PV] energy

Description

本発明は、太陽電池を直列に接続した太陽光発電装置及び太陽光発電システムに関する。   The present invention relates to a solar power generation apparatus and a solar power generation system in which solar cells are connected in series.

太陽光発電装置は、太陽光エネルギーを電気エネルギーに変換するもので、ＣＯ2を発生しないクリーンエネルギーとして注目されている。
太陽電池の単位セル（太陽電池素子）あたりの発生電圧は１Ｖ以下と低いため、複数の太陽電池素子を直列に接続したブロックを直並列に接続する。 The solar power generation device converts solar energy into electric energy, and has attracted attention as clean energy that does not generate CO2.
Since the generated voltage per unit cell (solar cell element) of the solar battery is as low as 1 V or less, blocks in which a plurality of solar cell elements are connected in series are connected in series and parallel.

直列に接続された太陽電池素子の一部が影に隠れると、その太陽電池素子は発電できないだけでなく、高抵抗となる。この場合には、直列に接続された太陽電池素子の全ての発電エネルギーの回収効率が低下する。   When a part of the solar cell elements connected in series is hidden in the shadow, the solar cell element cannot only generate power but also has high resistance. In this case, the recovery efficiency of all the power generation energy of the solar cell elements connected in series is lowered.

このため、太陽電池素子（単セル）又は数セルに対して並列にダイオードを接続し、発電エネルギーを高抵抗となる太陽電池素子から迂回させ、全体の発電エネルギーの回収効率を改善している。   For this reason, a diode is connected in parallel to the solar cell element (single cell) or several cells, and the generated energy is diverted from the high-resistance solar cell element, thereby improving the recovery efficiency of the entire generated energy.

図４は従来の太陽光発電装置の一例を示す回路構成図である（特許文献１）。図４に示す太陽光発電装置は、３つの太陽電池素子１が直列に接続された直列回路とこの直列回路の両端に並列に接続されたダイオード２（迂回ダイオード）とにより太陽電池ブロック３を構成している。   FIG. 4 is a circuit configuration diagram showing an example of a conventional solar power generation device (Patent Document 1). The solar power generation device shown in FIG. 4 comprises a solar cell block 3 by a series circuit in which three solar cell elements 1 are connected in series and a diode 2 (a bypass diode) connected in parallel at both ends of the series circuit. is doing.

この太陽電池ブロック３を直列に接続して構成された太陽光発電装置４は、負荷５に対して電力を供給する。負荷５は、蓄電池又は系統連係インバータなどにより構成され、発電されたエネルギーの蓄積や交流系統に回生する。   The solar power generation device 4 configured by connecting the solar cell blocks 3 in series supplies power to the load 5. The load 5 is configured by a storage battery or a grid-linked inverter, and regenerates the generated energy and regenerates the AC system.

また、図５に示すように、太陽光発電装置４−１〜４−ｎをダイオード６−１〜６−ｎを介して負荷５に並列に接続することにより、図４に示す太陽光発電装置よりもさらに高出力を得ることもできる。   Moreover, as shown in FIG. 5, the solar power generation device shown in FIG. 4 is connected by connecting the solar power generation devices 4-1 to 4-n in parallel to the load 5 via the diodes 6-1 to 6-n. Even higher output can be obtained.

特開昭５６−６９８７１号公報JP 56-69871 A

しかしながら、３つの太陽電池素子１の直列回路に並列にダイオード２を接続する図４に示す太陽光発電装置では、ダイオード２の電圧降下による発熱が大きく、この発熱がシステム全体の効率を低下させていた。   However, in the photovoltaic power generation apparatus shown in FIG. 4 in which the diode 2 is connected in parallel to the series circuit of the three solar cell elements 1, heat generation due to the voltage drop of the diode 2 is large, and this heat generation reduces the efficiency of the entire system. It was.

また、太陽光発電装置４−１〜４−ｎを並列に接続する図５に示す太陽光発電装置では、ダイオード２のバイパスする数によって、それぞれの太陽光発電装置の発電電圧にばらつきが生ずる。   Moreover, in the solar power generation device shown in FIG. 5 in which the solar power generation devices 4-1 to 4-n are connected in parallel, the generated voltage of each solar power generation device varies depending on the number of diodes 2 that are bypassed.

この場合、最大発電電圧を発生する太陽光発電装置によって、最小発電電圧の太陽光発電装置の出力電力が低下し、太陽光発電システム全体の発電効率が低下していた。   In this case, the output power of the solar power generation device having the minimum power generation voltage is reduced by the solar power generation device that generates the maximum power generation voltage, and the power generation efficiency of the entire solar power generation system is reduced.

本発明は、迂回ダイオードによる損失を低減させるとともに、システム全体の発電効率を向上することができる太陽光発電装置及び太陽光発電システムを提供することにある。   An object of the present invention is to provide a photovoltaic power generation apparatus and a photovoltaic power generation system that can reduce loss due to a bypass diode and improve the power generation efficiency of the entire system.

前記課題を解決するために、請求項１の発明は、直列に接続された１以上の太陽電池素子と前記１以上の太陽電池素子に並列に接続されるとともに太陽光が照射されているときにオフし且つ前記太陽光が照射されているときにオンする半導体スイッチとから構成される複合素子を、複数個直列に接続してなり、前記半導体スイッチは、ノーマリオン型のスイッチからなり、前記半導体スイッチのゲート−ソース間に第２太陽電池素子を接続してなることを特徴とする。 In order to solve the above problem, the invention of claim 1 is characterized in that one or more solar cell elements connected in series and the one or more solar cell elements are connected in parallel and are irradiated with sunlight. the composite element composed of a semiconductor switch which is turned on when off and and the sunlight is irradiated, Ri Na connected to each other in series, wherein the semiconductor switch is made normally-on switch, the The second solar cell element is connected between the gate and the source of the semiconductor switch .

本発明によれば、１以上の太陽電池素子に並列に接続された半導体スイッチは、太陽光が照射されているときにオフし、太陽光が照射されていないときにオンするので、半導体スイッチのオン電圧は、迂回ダイオードの順方向電圧Ｖｆよりも電圧降下が小さいため、１以上の太陽電池素子をバイパスする際の損失を低減できる。   According to the present invention, a semiconductor switch connected in parallel to one or more solar cell elements is turned off when sunlight is irradiated and turned on when sunlight is not irradiated. Since the on-voltage has a smaller voltage drop than the forward voltage Vf of the bypass diode, it is possible to reduce loss when bypassing one or more solar cell elements.

実施例１の太陽光発電装置を示す回路構成図である。It is a circuit block diagram which shows the solar power generation device of Example 1. FIG. 実施例１の太陽光発電装置の半導体スイッチの特性と従来のダイオードの特性とを示す図である。It is a figure which shows the characteristic of the semiconductor switch of the solar power generation device of Example 1, and the characteristic of the conventional diode. 実施例２の太陽光発電システムを示す回路構成図である。It is a circuit block diagram which shows the solar energy power generation system of Example 2. FIG. 従来の太陽光発電装置の一例を示す回路構成図である。It is a circuit block diagram which shows an example of the conventional solar power generation device. 従来の太陽光発電システムの他の一例を示す回路構成図である。It is a circuit block diagram which shows another example of the conventional solar power generation system.

以下、本発明の太陽光発電装置及び太陽光発電システムの実施の形態を図面を参照しながら詳細に説明する。   Hereinafter, embodiments of the photovoltaic power generation apparatus and the photovoltaic power generation system of the present invention will be described in detail with reference to the drawings.

図１は実施例１の太陽光発電装置を示す回路構成図である。図１に示す実施例１の太陽光発電装置４ａは、３つの太陽電池素子１が直列に接続された直列回路と、この直列回路の両端にドレイン−ソースが接続された半導体スイッチ７と、半導体スイッチ７のゲートとソースとの間に接続された太陽電池素子１ａとにより太陽電池ブロック３ａを構成し、太陽電池ブロック３ａを複数個直列に接続して構成されている。   FIG. 1 is a circuit configuration diagram illustrating the photovoltaic power generation apparatus according to the first embodiment. 1 includes a series circuit in which three solar cell elements 1 are connected in series, a semiconductor switch 7 in which a drain-source is connected to both ends of the series circuit, and a semiconductor. A solar cell element 3a connected between the gate and source of the switch 7 constitutes a solar cell block 3a, and a plurality of solar cell blocks 3a are connected in series.

半導体スイッチ７は、窒化ガリウム（ＧａＮ），炭化ケイ素（ＳｉＣ）などのワイドバンドギャップ半導体からなるノーマリオン型のスイッチからなり、太陽光が照射されているときにオフし、太陽光が照射されていないときにオンする。   The semiconductor switch 7 is a normally-on type switch made of a wide band gap semiconductor such as gallium nitride (GaN) or silicon carbide (SiC), and is turned off when irradiated with sunlight and irradiated with sunlight. Turn on when not.

なお、ＧａＮ，ＳｉＣなどのワイドバンドギャップ半導体の代わりに、ＧａＮによる高電子移動度トランジスタ（ＨＥＭＴ；High Electron Mobility Transistor）を用いても良い。   Note that a GaN high electron mobility transistor (HEMT) may be used instead of a wide band gap semiconductor such as GaN or SiC.

次に、このように構成された実施例１の太陽光発電装置の動作を説明する。太陽光が太陽電池素子１に照射されていないときには、太陽電池素子１に電圧が発生し、半導体スイッチ７のゲート−ソース間は、略零であるので、半導体スイッチ７はオンする。   Next, operation | movement of the solar power generation device of Example 1 comprised in this way is demonstrated. When the solar cell element 1 is not irradiated with sunlight, a voltage is generated in the solar cell element 1 and the gap between the gate and source of the semiconductor switch 7 is substantially zero, so the semiconductor switch 7 is turned on.

一方、太陽光が太陽電池素子１に照射されたときには、半導体スイッチ７のゲート−ソース間に陰極電圧が印加されるため、半導体スイッチ７はオフになる。このため、太陽電池素子１の発電電力が出力される。   On the other hand, when the solar cell element 1 is irradiated with sunlight, a cathode voltage is applied between the gate and source of the semiconductor switch 7, so that the semiconductor switch 7 is turned off. For this reason, the generated electric power of the solar cell element 1 is output.

このように実施例１の太陽光発電装置によれば、半導体スイッチ７は、太陽光が照射されているときにオフし、太陽光が照射されていないときにオンするので、図２に示すように、半導体スイッチ７のオン電圧Ｖｏｎ７は、迂回ダイオード２の順方向電圧Ｖｆ２よりも電圧降下が小さいため、１以上の太陽電池素子１をバイパスする際の損失を低減できる。   Thus, according to the solar power generation device of Example 1, the semiconductor switch 7 is turned off when sunlight is irradiated, and is turned on when sunlight is not irradiated, so as shown in FIG. Moreover, since the voltage drop of the on-voltage Von7 of the semiconductor switch 7 is smaller than the forward voltage Vf2 of the bypass diode 2, it is possible to reduce the loss when bypassing one or more solar cell elements 1.

また、半導体スイッチ７をオフさせるために、ゲート電圧をマイナス電位にするのみで、ゲート駆動損失を発生せず、太陽光発電時の効率を低下させない。   Further, in order to turn off the semiconductor switch 7, only the gate voltage is set to a negative potential, no gate drive loss occurs, and the efficiency during solar power generation is not reduced.

即ち、ダイオード２を使用していた従来の太陽光発電装置に比較して、半導体スイッチ７によるバイパス回路の抵抗が小さいため、太陽電池素子１が日陰などで隠れたときでも、太陽光発電システム全体に与える影響は少ない。   That is, since the resistance of the bypass circuit by the semiconductor switch 7 is small as compared with the conventional solar power generation apparatus using the diode 2, even when the solar cell element 1 is hidden in the shade or the like, the entire solar power generation system Has little effect on

図３は実施例２の太陽光発電システムを示す回路構成図である。図３に示す太陽光発電システムは、太陽光発電装置４ａ−１〜４ａ−４をダイオード６−１〜６−４を介して負荷５に並列に接続することにより構成されている。なお、太陽光発電装置の並列数は４個に限定されるものではない。   FIG. 3 is a circuit configuration diagram illustrating the photovoltaic power generation system according to the second embodiment. The solar power generation system shown in FIG. 3 is configured by connecting solar power generation devices 4a-1 to 4a-4 in parallel to a load 5 via diodes 6-1 to 6-4. In addition, the parallel number of photovoltaic power generation devices is not limited to four.

太陽光発電装置４ａ−１〜４ａ−４の各々は、３つの太陽電池素子１が直列に接続された直列回路と、この直列回路の両端にドレイン−ソースが接続された半導体スイッチ７と、半導体スイッチ７のゲートとソースとの間に接続された太陽電池素子１ａとにより太陽電池ブロック３ａ−１〜３ａ−４を構成し、太陽電池ブロック３ａ−１〜３ａ−４を複数個直列に接続して構成されている。   Each of the solar power generation devices 4a-1 to 4a-4 includes a series circuit in which three solar cell elements 1 are connected in series, a semiconductor switch 7 in which drain and source are connected to both ends of the series circuit, and a semiconductor. A solar cell block 3a-1 to 3a-4 is constituted by the solar cell element 1a connected between the gate and source of the switch 7, and a plurality of solar cell blocks 3a-1 to 3a-4 are connected in series. Configured.

太陽光発電装置４ａ−１〜４ａ−４の各々には、直列に電流検出抵抗８−１〜８−４（検出部）が接続されている。電流検出抵抗８−１〜８−４で検出された電流信号は制御回路１０に入力される。   Current detection resistors 8-1 to 8-4 (detection units) are connected in series to each of the solar power generation devices 4a-1 to 4a-4. The current signals detected by the current detection resistors 8-1 to 8-4 are input to the control circuit 10.

なお、太陽光発電装置４ａ−１〜４ａ−４に流れる電流を検出する代わりに、太陽光発電装置４ａ−１〜４ａ−４の電圧を検出しても良い。
実施例２では、制御回路１０に最も近い太陽電池ブロック３ａ−１〜３ａ−４内の半導体スイッチ７−１〜７−４のゲートとソースとは制御回路１０に接続されている。 In addition, you may detect the voltage of solar power generation device 4a-1-4a-4 instead of detecting the electric current which flows into solar power generation device 4a-1-4a-4.
In the second embodiment, the gates and sources of the semiconductor switches 7-1 to 7-4 in the solar cell blocks 3a-1 to 3a-4 closest to the control circuit 10 are connected to the control circuit 10.

制御回路１０は、複数の電流検出抵抗８−１〜８−４から複数の電流を入力して比較し、複数の電流値に基づいて、複数の電流値の内の最も小さい電流値を除く残りの電流値に対応する太陽光発電装置内の半導体スイッチ７のゲートとソースとの間に制御信号を印加することにより、その半導体スイッチ７をオンさせる。   The control circuit 10 inputs and compares a plurality of currents from the plurality of current detection resistors 8-1 to 8-4, and based on the plurality of current values, removes the remaining current value among the plurality of current values. The semiconductor switch 7 is turned on by applying a control signal between the gate and the source of the semiconductor switch 7 in the photovoltaic power generation apparatus corresponding to the current value.

又は、制御回路１０は、太陽発電装置４ａ−１〜４ａ−４の電圧を入力して比較し、複数の電圧値に基づいて、複数の電圧値の内の最も小さい電圧値を除く残りの電圧値に対応する太陽光発電装置内の半導体スイッチ７のゲートとソースとの間に制御信号を印加することにより、その半導体スイッチ７をオンさせる。   Alternatively, the control circuit 10 inputs and compares the voltages of the solar power generation devices 4a-1 to 4a-4, and based on the plurality of voltage values, the remaining voltage excluding the smallest voltage value among the plurality of voltage values. The semiconductor switch 7 is turned on by applying a control signal between the gate and the source of the semiconductor switch 7 in the photovoltaic power generation apparatus corresponding to the value.

次に、このように構成された実施例２の太陽光発電システムの動作を説明する。   Next, operation | movement of the solar energy power generation system of Example 2 comprised in this way is demonstrated.

まず、複数の電流検出抵抗８−１〜８−４により複数の太陽光発電装置４a−１〜４ａ−４に流れる電流が検出され、これらの電流は制御回路１０に入力される。   First, currents flowing through the plurality of solar power generation devices 4 a-1 to 4 a-4 are detected by the plurality of current detection resistors 8-1 to 8-4, and these currents are input to the control circuit 10.

制御回路１０は、複数の電流検出抵抗８−１〜８−４からの複数の電流値に基づいて、複数の電流値の内の最も小さい電流値、例えば電流検出抵抗８−１を流れる最も小さい電流値を除く残りの各電流値に対応する太陽光発電装置３ａ−２〜３ａ−４内の半導体スイッチ７−２〜７−４のゲートとソースとの間に制御信号を印加することにより、ゲートとソースとの間を略零にして、その半導体スイッチ７−２〜７−４をオンさせる。このため、太陽光発電装置３ａ−２〜３ａ−４の電圧が太陽光発電装置３ａ−１の電圧に揃うように近づけられる。   Based on the plurality of current values from the plurality of current detection resistors 8-1 to 8-4, the control circuit 10 has the smallest current value among the plurality of current values, for example, the smallest flowing through the current detection resistor 8-1. By applying a control signal between the gate and the source of the semiconductor switches 7-2 to 7-4 in the solar power generation devices 3a-2 to 3a-4 corresponding to the remaining current values excluding the current value, The gap between the gate and the source is made substantially zero, and the semiconductor switches 7-2 to 7-4 are turned on. For this reason, the voltage of the solar power generation devices 3a-2 to 3a-4 is brought close to the voltage of the solar power generation device 3a-1.

即ち、各太陽光発電装置４a−１〜４ａ−４の発電量を比較し、発電量の多い太陽光発電装置の一部の太陽電池ブロックを短絡し、端子電圧を低下させる。太陽光発電装置の端子電圧を低下させることにより、各ライン電圧を揃えて発電電圧の低い太陽光発電装置からの発電量を得ることで、発電電圧の低い太陽光発電装置以外の発電量の低下分を差し引いても、発電電圧の低い太陽光発電装置のラインからの発電量の方が上回る条件において半導体スイッチ７をオンさせることで、太陽光発電システム全体の発電効率を向上することができる。
なお、本発明は実施例１及び実施例２の太陽光発電装置及び太陽光発電システムに限定されるものではない。例えば、半導体スイッチ７のゲートとソースとの間にコンデンサや抵抗を挿入して、半導体スイッチ７のオン・オフに対する時定数やしきい値を調整することもできる。 That is, the power generation amount of each of the solar power generation devices 4a-1 to 4a-4 is compared, a part of the solar battery blocks of the solar power generation device with a large power generation amount is short-circuited, and the terminal voltage is reduced. By reducing the terminal voltage of the solar power generation device, the power generation amount other than the solar power generation device with low power generation voltage is reduced by aligning each line voltage and obtaining the power generation amount from the solar power generation device with low power generation voltage. Even if the amount is subtracted, the power generation efficiency of the entire photovoltaic power generation system can be improved by turning on the semiconductor switch 7 under the condition that the amount of power generation from the line of the photovoltaic power generation device having a low generation voltage is higher.
In addition, this invention is not limited to the solar power generation device and solar power generation system of Example 1 and Example 2. For example, it is possible to adjust a time constant and a threshold value for turning on / off the semiconductor switch 7 by inserting a capacitor or a resistor between the gate and the source of the semiconductor switch 7.

本発明は、蓄電池、インバータなどに適用可能である。   The present invention is applicable to storage batteries, inverters, and the like.

１，１ａ 太陽電池素子
２ ダイオード
３，３ａ，３ａ−１〜３ａ−４ 太陽電池ブロック
４，４ａ，４−１〜４−ｎ 太陽光発電装置
５ 負荷
６−１〜６−ｎ ダイオード
７，７−１〜７−４ ノーマリオン型のスイッチ
８−１〜８−４ 電流検出抵抗
１０ 制御回路 1,1a Solar cell element
2 Diode 3, 3a, 3a-1 to 3a-4 Solar cell block 4, 4a, 4-1 to 4-n Photovoltaic power generation device 5 Load 6-1 to 6-n Diode
7,7-1 to 7-4 Normally-on type switch
8-1 to 8-4 Current detection resistor 10 Control circuit

Claims (2)

直列に接続された１以上の太陽電池素子と前記１以上の太陽電池素子に並列に接続されるとともに太陽光が照射されているときにオフし且つ前記太陽光が照射されていないときにオンする半導体スイッチとから構成される複合素子を、複数個直列に接続してなり、
前記半導体スイッチは、ノーマリオン型のスイッチからなり、前記半導体スイッチのゲート−ソース間に第２太陽電池素子を接続してなることを特徴とする太陽光発電装置。 One or more solar cell elements connected in series and the one or more solar cell elements are connected in parallel and turned off when sunlight is irradiated and turned on when the sunlight is not irradiated the composite element composed of a semiconductor switch, Ri Na connected to each other in series,
The said semiconductor switch consists of a normally-on type switch, and connects a 2nd solar cell element between the gate-source of the said semiconductor switch, The solar power generation device characterized by the above-mentioned. 請求項１記載の太陽光発電装置が複数並列に接続された並列回路と、A parallel circuit in which a plurality of photovoltaic power generation devices according to claim 1 are connected in parallel;
前記複数の太陽光発電装置に対応して設けられ、前記複数の太陽光発電装置の電流又は電圧を検出して複数の検出信号を出力する複数の検出部と、A plurality of detection units provided corresponding to the plurality of solar power generation devices, detecting currents or voltages of the plurality of solar power generation devices and outputting a plurality of detection signals;
前記複数の検出部からの複数の検出信号に基づき、前記複数の太陽光発電装置の内の１以上の前記半導体スイッチをオンさせる制御回路と、Based on a plurality of detection signals from the plurality of detection units, a control circuit for turning on one or more of the semiconductor switches in the plurality of photovoltaic power generation devices,
を備えることを特徴とする太陽光発電システム。A photovoltaic power generation system comprising:
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