JP4976781B2 - Wafer wet processing method and wafer etching apparatus - Google Patents

Description

  The present invention relates to a wafer wet processing method and a wafer etching apparatus, and in particular, grips the wafer in a container-shaped pot portion and rotates it horizontally, and processing liquid such as etching liquid and rinse water from above the rotating wafer. The present invention relates to a wafer wet processing method and a wafer etching apparatus in which spraying is performed separately.

  As a conventional wafer etching apparatus, for example, as disclosed in Patent Document 1, a wafer is placed on a wafer chuck that rotates in a horizontal direction inside a cup, and etching is performed from an etching nozzle provided above the wafer. Liquid is sprayed onto the surface of the wafer. In addition, the discharge part of the etching nozzle is electrically conductive and grounded, so that explosion due to charged static electricity is prevented and etching is performed safely.

  Further, in the conventional wafer etching apparatus of Patent Document 2, a wafer is placed on a wafer chuck that rotates in the horizontal direction, and an etching solution and rinse water are sprayed on the surface of the wafer provided above the wafer chuck to perform etching. The liquid and rinse water are separated.

  In addition, by supplying the etching solution to the surface of the wafer from the substantially center of the ceiling plate covering the whole wafer placed on the wafer chuck, the wafer chuck and the ceiling plate are rotated in the same rotational speed and in the same direction, thereby rebounding. The chemical (etching solution) travels along the lower surface of the ceiling plate and moves to the end of the ceiling plate, and is thrown out to the receiver by the rotational force of the ceiling plate so as not to fall on the wafer surface.

After the above etching process, the wafer chuck is lifted slightly, and the wafer chuck is rinsed by supplying pure water from the nozzle to the wafer surface by making the rotation speed of the wafer chuck larger than the rotation speed during the etching process. Thus, the etching solution and pure water are collected in separate receptacles so that they can be recycled for reuse.
JP-A-9-115873 JP 2000-277482 A

  By the way, in the conventional wafer etching apparatus of Patent Document 1, the etching solution is sprayed from the etching nozzle, and the chemical (etching solution) bounced off the surface of the wafer jumps out of the cup or collides with the inner wall of the cup. This bounces back and falls again and returns to the surface of the wafer, or the agglomerated mist falls and returns to the surface of the wafer. Therefore, there is a problem that a liquid pool is generated on the surface of the wafer, the concentration of the etching solution is changed, and the uniformity of the etching process is lowered. This problem is the same even in the case of a cleaning liquid (rinse).

  In addition, in the conventional wafer etching apparatus of Patent Document 2, in order to prevent the chemical (etching solution) bounced off the surface of the wafer from falling again and returning to the surface of the wafer, It is necessary to rotate the ceiling plate and the wafer chuck covering the whole in the same rotational speed and in the same direction, which requires a complicated device.

In order to achieve the object to be solved by the above invention, a wafer wet processing method according to the present invention is such that a wafer is gripped in a container-like pot portion and rotated in a horizontal direction, and a processing liquid is applied from above the rotating wafer. When spreading and spraying from two spray nozzles in a flat fan shape ,
The fan-shaped surfaces of the two planar fan-shaped sprays are opposed to each other with a sandwiching angle, and scattering of the processing liquid when the two planar fan-shaped sprays bounce off the surface of the wafer is suppressed between the sandwiching angles. to prevent Te, so that the two planar fan of the fan-shaped surfaces of the spray respectively inclined with respect to the surface of the wafer, and the two planar fan-shaped spray is injected into the same line of the surface of the wafer Further, the direction of the two spray nozzles is inclined with respect to the surface of the wafer .

  The wafer wet processing method of the present invention is preferably characterized in that, in the wafer wet processing method, the sandwiching angle is 15 to 60 degrees.

  The wafer wet processing method of the present invention is preferably characterized in that, in the wafer wet processing method, the processing solution is an etching solution or a rinsing water.

Further, the wafer etching apparatus of the present invention comprises a container-like pot portion that rinses with rinse water after etching the wafer with an etching solution,
A wafer rotating unit that holds the wafer in the pot unit and rotates the wafer in a horizontal direction;
A processing solution spraying unit that sprays the etching solution and the rinse water separately from above the wafer rotated by the wafer rotating unit,
In a wafer etching apparatus comprising:
The treatment liquid spray section of at least one of the etching liquid and the rinse water has two spray nozzles that spread and spray in a flat fan shape ,
While facing the fan-shaped surfaces of two flat fan-shaped sprays with each other at an angle,
In order to prevent the processing liquid from splashing when the two planar fan-shaped sprays bounce off the surface of the wafer, the fan-shaped surfaces of the two planar fan-shaped sprays are held between the wafers. respectively inclined with respect to the surface of, and the like two flat fan spray is injected into the same line of the surface of the wafer, said two orientations of spray nozzles each tiltably with respect to the surface of the wafer It is characterized by being provided.

  The wafer etching apparatus according to the present invention is preferably characterized in that, in the wafer etching apparatus, the sandwiching angle is 15 to 60 degrees.

  As understood from the means for solving the above problems, according to the wafer wet processing method of the present invention, the two fan-shaped sprays of the two spray nozzles are sandwiched from each other with respect to the wafer surface. Inclined and sprayed on the same line on the surface of the wafer, so even if two sprays sprayed on the same line on the surface of the wafer bounce off the surface of the wafer, the splatter is between the two spray angles It can be restrained so as to jump out in two restrained directions. As a result, it is possible to prevent a severe scattering state due to the rebound of the wafer surface, and further to prevent liquid pooling on the wafer surface. Moreover, since two spray nozzles are used, a large amount of processing liquid can be sprayed.

  Further, according to the wafer etching apparatus of the present invention, the two fan-shaped sprays ejected from the two spray nozzles are inclined with respect to the wafer surface with a sandwiching angle and ejected onto the same line on the wafer surface. Therefore, even if two sprays sprayed on the same line on the surface of the wafer bounce off the surface of the wafer, the splatter can be suppressed so as to jump out in two directions between the two spray angles. it can. As a result, it is possible to prevent a severe scattering state due to the rebound of the wafer surface, and further to prevent liquid pooling on the wafer surface. Moreover, since two spray nozzles are used, a large amount of processing liquid can be sprayed.

  Embodiments of the present invention will be described below with reference to the drawings.

  The wafer etching apparatus according to this embodiment is an etching apparatus for WLP [more precisely, a wafer level chip size package (WLCSP)]. WLCSP means that a resin insulating layer is formed on the surface of a wafer provided with an Al electrode, and a copper wiring layer (or nickel plating layer) as a rewiring layer that is electrically connected to the Al electrode is formed on the surface of the resin insulating layer. Forming a solder bump for connecting to another substrate on the rewiring layer exposed to the sealing resin after leaving a part of the rewiring layer and sealing with a sealing resin. A wafer on which solder bumps are formed is packaged.

As an intermediate step of this WLCSP, when forming the above-mentioned rewiring layer, a seed layer made of a conductive sputter layer is formed in order to improve the plating property of the rewiring layer with respect to the Al electrode and the resin insulating layer. There is a process. There is a step of forming a resist layer on the seed layer and then performing a plating process to form a rewiring layer, then peeling the resist layer and etching the seed layer. In this etching step, the surface of the wafer is etched with, for example, a salt iron-based etchant, and then rinsed with, for example, rinse water of ultrapure water.

  The wafer etching apparatus of this embodiment is used in the above etching process.

  Referring to FIG. 2, an etching apparatus 1 is provided with a cylindrical container-like pot portion 3 for performing the above-described etching and rinsing, and a wafer 5 can be taken in and out above the pot portion 3. The wafer inlet 7 is opened. Further, a wafer rotating part 11 provided with, for example, a wafer chuck 9 for mounting the wafer 5 at a substantially central position inside the pot part 3 and rotating at a rotational speed of, for example, several tens to several hundreds of rpm in the horizontal direction. Is provided. The wafer rotating unit 11 is configured to be lifted and lowered by a lift driving device (not shown) in a drive chamber 13 provided below the pot unit 3 at a substantially central position of the bottom of the pot unit 3.

  Further, the upper part of the wafer rotating part 11 inserted into the pot part 3 is accommodated in a cylindrical base part 15, and a hole through which the wafer rotating part 11 can be inserted into the upper part of the base part 15. A portion 17 is provided, and the hole 17 and the wafer chuck 9 are watertight so that the etching solution and the rinse water do not enter.

  Further, the outside of the pot portion 3 is etched from above the wafer 5 rotated by the wafer rotating portion 11 inside the pot portion 3 from the wafer insertion port 7 as shown in FIGS. 3 and 4. A treatment liquid spray unit 19 is provided for spraying the liquid EL and the rinse water RL separately. That is, in the processing liquid spray section 19, an etching nozzle section 21 for spraying the etching liquid EL and a rinse nozzle section 23 for spraying the rinse water RL are separately moved to a position above the wafer inlet 7. It is configured freely.

  In the pot portion 3, an etchant discharge chamber 25 for draining the etchant EL sprayed on the wafer 5 has an opening 27 over the entire outer peripheral side of the base portion 15 in this embodiment. It has a cylindrical shape having. The etching solution discharge chamber 25 communicates with a waste liquid line 29 for discharging the etching solution EL to a management tank (not shown), and the etching solution EL discharged to the management tank is recycled and used again.

  Further, a rinse water discharge chamber 31 for draining the rinse water RL sprayed on the wafer 5 is opened in the pot portion 3 over the entire outer peripheral side of the etchant discharge chamber 25 in this embodiment. A cylindrical shape having a portion 33 is provided. The rinse water discharge chamber 31 communicates with a rinse water treatment tank through a rinse water discharge pipe (not shown).

  Further, inside the pot portion 3, for example, an inner cup 35 as a drainage path switching member that switches the drainage path of the etching solution EL and the rinse water RL to the etching solution discharge chamber 25 and the rinse water discharge chamber 31 can be raised and lowered. Is provided.

  For example, the inner cup 35 covers the opening 27 of the etching solution discharge chamber 25 and covers the opening 37 for guiding the rinse water RL sprayed on the wafer 5 to the opening 33 of the rinse water discharge chamber 31. In a state where the lid portion 37 is lifted away from the opening portion 27 of the etchant discharge chamber 25, the lower surface of the lid portion 37 is lowered to guide the etchant EL sprayed on the wafer 5 to the etchant discharge chamber 25. And a cylindrical cup portion 39 protruding toward the surface. The lid portion 37 has an umbrella shape with a hole 41 in the center, and the inner periphery of the hole 41 is connected to the outer periphery of the base portion 15 as shown in FIGS. In order to seal the contact portion, a seal portion 43 including a seal material 43A on the base portion 15 side and a seal material 43B on the lid portion 37 side of the inner cup 35 is formed.

  The inner cup 35 is guided by a plurality of guide portions 45 provided in the vicinity of the outer peripheral wall of the pot portion 3 and is provided so as to freely move up and down. The inner cup 35 is provided outside the pot portion 3 through the guide portion 45. It is configured to be driven up and down by, for example, an air cylinder 47 as a pot unit up-and-down driving device.

  Referring to FIGS. 5 and 6 together, the etching nozzle portion 21 of the processing liquid spray portion 19 constituting the main portion of this embodiment is a nozzle provided in the etching apparatus body 49 outside the pot portion 3. An arm rotation driving unit 51, an etching nozzle arm 53 supported by the nozzle arm rotation driving unit 51 so as to swing and move in the horizontal direction, and an etching solution EL provided at the tip of the etching nozzle arm 53. The spray nozzle 21A spreads and sprays in a flat fan shape, and an etching solution supply line 55 for supplying the etching solution EL to the spray nozzle 21A.

  Further, referring also to FIG. 7, the nozzle arm rotation drive unit 51 rotates the nozzle arm drive shaft unit 59 and the nozzle arm drive shaft unit 59 supported by the etching apparatus body 49 via the bearing unit 57. The nozzle arm motor 61 is driven.

  Further, the nozzle arm drive shaft portion 59 is provided with a nozzle arm rotation angle detection device (not shown) for detecting the shaft rotation angle, and a signal detected by the nozzle arm rotation angle detection device is not shown. The forward / reverse rotation drive of the nozzle arm motor 61 is controlled.

  Further, the base of the etching nozzle arm 53 is attached to the upper portion of the nozzle arm drive shaft portion 59, and the wafer 5 in which the spray nozzle 21A is rotated from the standby position 63 inside the pot portion 3 as shown in FIG. Is configured to swing on a trajectory passing through an upper position substantially in the center.

  As shown in FIG. 6, the height of the spray nozzle 21 </ b> A is such that the nozzle holding portion 21 </ b> B that holds the spray nozzle 21 </ b> A is bolted to a long hole 65 provided in the vertical direction at the tip of the etching nozzle arm 53. By being inserted and tightened through 67, it is provided so as to be adjustable. The etching liquid supply pipe 55 is provided along the longitudinal direction of the etching nozzle arm 53 and communicates with a supply source of the etching liquid EL. The planar fan-shaped spray of the spray nozzle 21 </ b> A is a direction spreading in the longitudinal direction of the etching nozzle arm 53.

  Referring to FIGS. 5 and 8A to 8C together, the rinse nozzle portion 23 of the treatment liquid spray portion 19 constituting the main portion of this embodiment is etched outside the pot portion 3. A nozzle arm rotation drive unit 69 provided in the apparatus main body 49, a rinse nozzle arm 71 supported by the nozzle arm rotation drive unit 69 so as to be swingable in the horizontal direction, and a tip of the rinse nozzle arm 71. Two spray nozzles 23A, 23B that spread and spray the rinse water RL in a flat fan shape, and two rinse water supply pipes 73A for supplying the rinse water RL to the spray nozzles 23A, 23B, 73B.

  A bifurcated main arm 71A and a sub arm 71B are attached to the tip of the rinse nozzle arm 71. The spray nozzle 23A is provided at the tip of the main arm 71A, and the spray nozzle 23B is provided at the tip of the sub arm 71B. Is provided.

  In this embodiment, the spray nozzles 23A and 23B are displaced by a distance A in the longitudinal direction (X direction) of each main arm 71A and sub arm 71B as shown in FIGS. 8 (A) and 8 (B). In position. In addition, as shown in FIG. 8B, each of the spray nozzles 23A and 23B has the nozzle holding portions 23C and 23D of the spray nozzles 23A and 23B in the X direction at the distal ends of the main arms 71A and the sub arms 71B. A bolt 77 is inserted into and tightened into a semicircular elongated hole 75 provided on the surface, thereby being perpendicular to the left and right in the X direction (front and rear in the distal direction of each main arm 71A and sub arm 71B) in FIG. 8B. It is the structure which can be adjusted and inclined in the range of inclination-angle (alpha) with respect to a direction (Z direction).

  Further, as shown in FIGS. 8A and 8C, the spray nozzles 23A and 23B are shifted by a distance B in the Y direction orthogonal to the longitudinal direction (X direction) of each main arm 71A and sub arm 71B. In position. In addition, as shown in FIG. 8C, the spray nozzles 23A and 23B have the nozzle holding portions 23C and 23D of the spray nozzles 23A and 23B in the Y direction between the main arms 71A and the sub arms 71B. By inserting a bolt 81 into a semicircular elongated hole 79 provided on the end face of the bolt and tightening, a bolt 81 is inserted and tightened to the left and right in the Y direction (left and right in the distal direction of each main arm 71A and sub arm 71B) in FIG. In this configuration, the tilt can be adjusted in the range of the tilt angle β with respect to the vertical direction (Z direction). In this embodiment, since the range of each inclination angle β is 30 °, the total inclination angle is 60 ° on the left and right.

  Note that the nozzle arm rotation drive unit 69 has the same structure as the nozzle arm rotation drive unit 51 of the etching nozzle unit 21 described above, and thus detailed description thereof is omitted.

  Therefore, the base portion of the rinse nozzle arm 71 is attached to the upper portion of the nozzle arm drive shaft portion 59 of the nozzle arm rotation drive portion 69, and the spray nozzles 23A and 23B are moved from the standby position 83 to the pot portion as shown in FIG. 3 is configured to swing on a trajectory passing through an upper position substantially at the center of the wafer 5 rotated inside.

  As shown in FIG. 8B, the height positions of the spray nozzles 23A and 23B are such that the main arm 71A is provided with a bolt 87 in a long hole 85 provided in the Z direction at the tip of the rinse nozzle arm 71. It is provided so as to be adjustable by being inserted and tightened. The two rinse water supply pipes 73A and 73B are piped along the longitudinal direction of the rinse nozzle arm 71 and communicated with a supply source of the rinse water RL.

  In this embodiment, since the flat fan-shaped spray of the spray nozzles 23A and 23B is a direction spreading in the longitudinal direction (X direction) of the rinse nozzle arm 71, the surface of the Y direction perpendicular to the X direction is relative to the Z direction. As shown in FIG. 1B, the fan-shaped sprays of the two spray nozzles 23A and 23B are sandwiched between each other and the surface of the wafer 5 is sandwiched by an angle θ. And is sprayed onto the same line JL on the surface of the wafer 5. By adjusting the height positions of the spray nozzles 23A and 23B and the inclination angle β, the sandwiching angle θ can be adjusted. In addition, it is desirable that the sandwiching angle θ is 15 to 60 degrees from the standpoint that severe scattering of the rinsing water RL can be suppressed. Scattering cannot be suppressed when the sandwiching angle θ is less than 15 degrees or more than 60 degrees.

  The operation of the etching apparatus 1 having the above configuration will be described. As shown in FIG. 2, the inner cup 35 is lifted by the air cylinder 47 and the etching solution EL sprayed on the wafer 5 is transferred to the etching solution discharge chamber 25. It is in a state to induce.

  Further, when the wafer rotating unit 11 is lifted by a lift drive device (not shown), the wafer chuck 9 at the upper end of the wafer rotating unit 11 is loaded into the wafer of the pot unit 3 as shown by a two-dot chain line in FIG. It rises to a position above the mouth 7. The wafer 5 to be etched is, for example, sucked by the nozzle 89 shown in FIG. 3 and then transported, and is mounted on the wafer chuck 9 of the two-dot chain line in FIG. Thereafter, the nozzle 89 returns to the original position. In this embodiment, the wafer 5 has two diameters, for example, φ150 mm and φ200 mm.

  Next, the wafer rotating unit 11 is moved to a position indicated by a solid line in FIG. 2, that is, the wafer 5 of the wafer chuck 9 to a position slightly above the upper end of the base unit 15 by an elevating drive device (not shown). When the wafer rotating unit 11 is rotationally driven, the wafer 5 of the wafer chuck 9 is rotated in the horizontal direction at a rotational speed of, for example, several tens to several hundreds rpm.

  During this time, as shown in FIG. 3, the etching nozzle portion 21 moves to a position above the wafer inlet 7 of the pot portion 3, and the etching liquid EL is transferred from the etching nozzle portion 21 to the above rotating wafer. The wafer 5 is etched by being sprayed on the substrate 5 for a predetermined time. That is, as shown in FIG. 3, the spray nozzle 21 </ b> A swings and moves on the trajectory passing through the upper position substantially at the center of the wafer 5 by the etching nozzle arm 53 as shown in FIG. 5. The etching liquid EL is sprayed in a flat fan shape in a direction extending from the spray nozzle 21 </ b> A to the longitudinal direction of the etching nozzle arm 53. In this embodiment, the distance from the spray nozzle 21A to the surface of the wafer 5 is, for example, 100 to 110 mm, and the distance from the surface of the wafer 5 to the wafer inlet 7 is 80 mm.

  At this time, the etching solution EL sprayed on the wafer 5 is guided from the opening 27 to the etching solution discharge chamber 25 by the cup portion 39 of the inner cup 35 as shown by the arrow in FIG. After that, the etching solution EL is discharged to the management tank, recycled in the management tank, and used again.

  When the etching process is completed, the etching nozzle portion 21 returns to the original position. During this time, as shown in FIG. 4, the inner cup 35 is lowered by the air cylinder 47 and stopped at a position where the lid portion 37 of the inner cup 35 covers the opening portion 27 of the etchant discharge chamber 25. To do. At this time, the lid portion 37 of the inner cup 35 and the seal portion 43 of the base portion 15 are in contact with each other with the inner peripheral edge of the lid portion 37 of the inner cup 35 and the outer peripheral edge of the base portion 15 being overlapped. Further, the sealing material 43B on the inner peripheral edge of the hole portion 41 of the lid portion 37 of the inner cup 35 comes into contact with the sealing material 43A on the upper surface on the outer peripheral side of the base portion 15 with an overlap margin of about 10 mm, for example.

  On the other hand, the rinse nozzle part 23 is moved to a position above the wafer insertion port 7 of the pot part 3, and the rinse water RL is applied to the rotating wafer 5 from the spray nozzles 23 </ b> A and 23 </ b> B of the rinse nozzle part 23. The wafer 5 is rinsed by being sprayed for a predetermined time.

  That is, as shown in FIG. 5, the spray nozzles 23 </ b> A and 23 </ b> B are swung on the locus passing through the upper position of the center of the wafer 5 by the rinse nozzle arm 71 and are shown in FIG. 4. In this way, the rinsing water RL is sprayed in the form of a flat fan in a direction extending from the spray nozzles 23 </ b> A and 23 </ b> B in the longitudinal direction of the rinse nozzle arm 71. In this embodiment, the distance from the spray nozzles 23 </ b> A and 23 </ b> B to the surface of the wafer 5 is 100 to 110 mm, similar to the etching nozzle portion 21.

  Further, in this embodiment, since the two spray nozzles 23A and 23B are used, the amount of the rinse water RL sprayed by each spray nozzle 23A and 23B is different from that in the case where only one spray nozzle is used. Has been adjusted small. However, if only one spray nozzle is used, the amount of rinse water RL that can be sprayed cannot be increased, but the use of two spray nozzles 23A and 23B has an effect that a large amount of rinse can be used.

  More specifically, as shown in FIGS. 1A and 1B, the two fan-shaped sprays of the two spray nozzles 23A and 23B are inclined with respect to the surface of the wafer 5 with an sandwiching angle θ. And it is injected on the same line JL on the surface of the wafer 5. As a result, even if two sprays sprayed on the same line JL on the surface of the wafer 5 bounce off the surface of the wafer 5, the splattering is suppressed between the two spraying angles θ, and FIG. It jumps out in the two directions indicated by arrows A). Therefore, it is possible to prevent the rinsing water RL from being severely scattered even with a single nozzle or a twin nozzle, and to prevent the rinsing water RL from collecting on the surface of the wafer 5. .

  Incidentally, as shown in FIGS. 9A to 9C, when a fan-shaped spray is sprayed on the surface of the wafer 5 by a single spray nozzle 23A, it is indicated by an arrow in FIG. 9A. There is a tendency for fine mist-like liquid to soar upward. In addition, although large granular splattering tends to occur in the spray spread angle direction as shown by the arrow in FIG. 9B, the number is small.

  Further, as shown in FIGS. 10A and 10B, the two fan-shaped sprays of the two spray nozzles 23A and 23B are not sprayed on the same line on the surface of the wafer 5 and are different from each other. In some cases, if two sprays interfere with each other and collide, they can cause severe splashes. Therefore, as shown in FIG. 10 (C), when two sprays are sprayed in parallel and there is a gap C between the two sprays, as indicated by an arrow between the gaps C, It will violently scatter in two directions. However, in this embodiment, as shown in FIGS. 1A and 1B described above, the surface of the wafer 5 has two fan-shaped sprays of the two spray nozzles 23A and 23B sandwiching each other at an angle θ. , And sprayed onto the same line JL on the surface of the wafer 5, the scattering of the rinsing water RL can be minimized.

  The rinse water RL sprayed on the wafer 5 as described above is guided from the opening 33 to the rinse water discharge chamber 31 by the lid portion 37 of the inner cup 35 as shown by the arrow in FIG. It is discharged to the rinse water treatment tank through the water discharge pipe.

  Further, when the rinsing process is completed, the rinsing nozzle unit 23 returns to the original position. During this time, as shown in FIG. 2, the inner cup 35 is raised by the air cylinder 47 and returned to a state where the next wafer 5 can be etched. Further, the rotation of the wafer rotating unit 11 is stopped, and the wafer rotating unit 11 is lifted by a lifting / lowering driving device (not shown) so that the upper end of the wafer rotating unit 11 is shown as indicated by a two-dot chain line in FIG. The wafer chuck 9 is raised to a position above the wafer insertion port 7 of the pot portion 3. The wafer 5 of the wafer chuck 9 is sucked by an unloader (not shown) and then transferred to the next process.

  In the above-described embodiment, the case where the two spray nozzles 23A and 23B are used in the rinsing process has been described. However, in the etching process, as in the case of the rinsing process described above using two spray nozzles. A similar effect can be obtained by causing the two fan-shaped sprays to incline with respect to the surface of the wafer 5 with a sandwiching angle θ and to be sprayed on the same line JL on the surface of the wafer 5. .

  Furthermore, it is applicable not only in the case of the above-described etching process, but also in a wet process method of the wafer 5 in which a wet process is performed by spraying another process solution such as a developer.

(A) is a schematic perspective view which shows the state of the rinse process in the wafer etching apparatus of this Embodiment, (B) shows the clamping angle (theta) of the two fan-shaped sprays in (A). It is a schematic explanatory drawing. 1 is a schematic cross-sectional view showing the entirety of an etching apparatus according to an embodiment of the present invention. It is state explanatory drawing when an etching process is carried out with the etching apparatus of FIG. FIG. 3 is a state explanatory diagram when a rinsing process is performed in the etching apparatus of FIG. 2. FIG. 3 is a plan view for explaining the operation of an etching nozzle part and a rinsing nozzle part in the etching apparatus of FIG. 2. It is a side view of the front-end | tip part of the etching nozzle part of FIG. FIG. 3 is a cross-sectional view of a nozzle arm rotation driving unit that drives an etching nozzle unit in the etching apparatus of FIG. 2. (A) is a plan view of the distal end portion of the rinse nozzle portion of FIG. 5, (B) is a side view of the distal end portion of the rinse nozzle portion, and (C) is a partial view taken along line VIII-VIII in (A). FIG. (A) is the state explanatory view seen from the front when spraying rinse water on the surface of a wafer using one spray nozzle, (B) is the state explanatory view seen from the side of the spray of (A). (C) is a perspective view of the spray of (A). (A), (B) is a schematic perspective view showing a state in which two sprays of two spray nozzles are different on the wafer surface, and (C) is a diagram showing two sprays on the wafer surface. It is a schematic perspective view which shows the state in the case of being parallel.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Etching apparatus 3 Pot part 5 Wafer 7 Wafer insertion port 9 Wafer chuck 11 Wafer rotation part 15 Base part 19 Process liquid spray part 21 Etching nozzle part 21A Spray nozzle 21B Nozzle holding part 23 Rinse nozzle part 23A, 23B Spray nozzles 23C, 23D Nozzle holder 25 Etch solution discharge chamber 31 Rinse water discharge chamber 35 Inner cup (drainage path switching member)
37 Lid portion 39 Cup portion 43 Seal portion 49 Etching apparatus main body 51 Nozzle arm rotation drive portion 53 Etching nozzle arm 55 Etching solution supply line 61 Nozzle arm motor 59 Nozzle arm drive shaft portions 63, 83 Standby positions 65, 75, 79 , 85 Long holes 67, 77, 81, 87 Bolt 69 Nozzle arm rotation drive unit 71 Rinse nozzle arm 71A Main arm 71B Sub arms 73A, 73B Rinse water supply conduit

Claims (5)

When holding the wafer in the container-shaped pot portion and rotating it horizontally , spreading the processing liquid from two spray nozzles in a flat fan shape and spraying it from above the rotating wafer,
The fan-shaped surfaces of the two planar fan-shaped sprays are opposed to each other with a sandwiching angle, and scattering of the processing liquid when the two planar fan-shaped sprays bounce off the surface of the wafer is suppressed between the sandwiching angles. to prevent Te, so that the two planar fan of the fan-shaped surfaces of the spray respectively inclined with respect to the surface of the wafer, and the two planar fan-shaped spray is injected into the same line of the surface of the wafer And a wafer wet processing method , wherein the two spray nozzles are inclined with respect to the surface of the wafer.   2. The wafer wet processing method according to claim 1, wherein the sandwiching angle is 15 to 60 degrees.   3. The wafer wet processing method according to claim 1, wherein the processing liquid is an etching liquid or rinsing water. A container-like pot portion for rinsing with rinse water after etching the wafer with an etchant;
A wafer rotating unit that holds the wafer in the pot unit and rotates the wafer in a horizontal direction;
A processing solution spraying unit that sprays the etching solution and the rinse water separately from above the wafer rotated by the wafer rotating unit,
In a wafer etching apparatus comprising:
The treatment liquid spray section of at least one of the etching liquid and the rinse water has two spray nozzles that spread and spray in a flat fan shape ,
While facing the fan-shaped surfaces of two flat fan-shaped sprays with each other at an angle,
In order to prevent the processing liquid from splashing when the two planar fan-shaped sprays bounce off the surface of the wafer, the fan-shaped surfaces of the two planar fan-shaped sprays are held between the wafers. respectively inclined with respect to the surface of, and the like two flat fan spray is injected into the same line of the surface of the wafer, said two orientations of spray nozzles each tiltably with respect to the surface of the wafer A wafer etching apparatus comprising: a wafer etching apparatus;   5. The wafer etching apparatus according to claim 4, wherein the sandwiching angle is 15 to 60 degrees.

Images