JP4976342B2 - Substrate cleaning apparatus, substrate cleaning method, and storage medium - Google Patents

Substrate cleaning apparatus, substrate cleaning method, and storage medium Download PDF

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JP4976342B2
JP4976342B2 JP2008159032A JP2008159032A JP4976342B2 JP 4976342 B2 JP4976342 B2 JP 4976342B2 JP 2008159032 A JP2008159032 A JP 2008159032A JP 2008159032 A JP2008159032 A JP 2008159032A JP 4976342 B2 JP4976342 B2 JP 4976342B2
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brush
substrate
cleaning
compressive force
force
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JP2010003737A (en
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信彦 毛利
暁 田中
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to US12/472,495 priority patent/US8356376B2/en
Priority to SG200904094-0A priority patent/SG158040A1/en
Priority to KR1020090049421A priority patent/KR101267208B1/en
Priority to TW098119283A priority patent/TWI405253B/en
Priority to CN2009101505500A priority patent/CN101609791B/en
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Priority to KR1020120077737A priority patent/KR101276488B1/en
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本発明は、少なくとも基板の端面をブラシ洗浄する基板洗浄装置および基板洗浄方法、ならびに記憶媒体に関する。   The present invention relates to a substrate cleaning apparatus and a substrate cleaning method for brush cleaning at least an end surface of a substrate, and a storage medium.

半導体デバイスの製造プロセスやフラットパネルディスプレー(FPD)の製造プロセスにおいては、被処理基板である半導体ウエハやガラス基板に付着したパーティクルやコンタミネーション等を除去する洗浄処理が行われる。このような洗浄処理を行う装置としては、基板をスピンチャックに保持し、基板を回転させた状態でウエハの表面に洗浄液を供給してウエハの表面を洗浄する枚葉式の洗浄装置が知られている。   In a semiconductor device manufacturing process and a flat panel display (FPD) manufacturing process, a cleaning process is performed to remove particles, contamination, and the like adhering to a semiconductor wafer or glass substrate as a substrate to be processed. As a device for performing such a cleaning process, there is known a single wafer cleaning device that holds a substrate on a spin chuck and supplies a cleaning liquid to the surface of the wafer while the substrate is rotated to clean the surface of the wafer. ing.

このような洗浄装置の洗浄処理においては、洗浄液として用いられた酸やアルカリの薬液が洗浄処理の過程で基板周縁部に残存し、そのまま乾燥して付着物となることや、洗浄によって除去された物質が基板の周縁部に再付着することが生じる。かつては、基板の周縁部は製品として使用されないため、このような基板周縁部の付着物に対して特別な対策がとられていなかったが、デバイス等の微細化が進み、このような基板周縁部の付着物が基板搬送機構の基板支持アーム等に付着することによる悪影響が顕在化するようになってきた。このような悪影響を防止する技術として、基板の周縁部にスポンジ状のブラシを当接させて周縁部の付着物を除去する技術が提案されている(例えば、特許文献1、2)   In the cleaning process of such a cleaning apparatus, the acid or alkali chemical used as the cleaning liquid remains on the periphery of the substrate in the course of the cleaning process, and is dried as it is to become a deposit or removed by cleaning. It occurs that the material redeposits on the periphery of the substrate. In the past, since the peripheral part of the substrate is not used as a product, no special measures have been taken against such deposits on the peripheral part of the substrate. Adverse effects caused by the adhering material attached to the substrate support arm or the like of the substrate transport mechanism have become apparent. As a technique for preventing such an adverse effect, a technique has been proposed in which a sponge-like brush is brought into contact with the peripheral edge of the substrate to remove deposits on the peripheral edge (for example, Patent Documents 1 and 2).

しかしながら、基板周縁部、特に基板端面には、強固に付着している付着物も存在し、単にスポンジ状ブラシを当接させただけでは除去することができない場合が生じる。
実開平5−79939号公報 特開2007−165794号公報
However, there are also deposits that are firmly attached to the peripheral edge of the substrate, particularly the end surface of the substrate, and cannot be removed simply by contacting the sponge brush.
Japanese Utility Model Publication No. 5-79939 JP 2007-165794 A

本発明は、かかる事情に鑑みてなされたものであって、少なくとも基板端面に付着した付着物をスポンジ状ブラシにより効果的に除去することができる基板洗浄装置および基板洗浄方法を提供することを目的とする。
また、そのような方法を実施するためのプログラムを記憶した記憶媒体を提供することを目的とする。
The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a substrate cleaning apparatus and a substrate cleaning method that can effectively remove at least deposits adhered to the substrate end face with a sponge-like brush. And
Moreover, it aims at providing the storage medium which memorize | stored the program for implementing such a method.

上記課題を解決するために、本発明の第1の観点では、基板の少なくとも端面をブラシ洗浄する基板洗浄装置であって、基板を回転可能に保持する基板保持機構と、前記基板保持機構に保持されている基板を回転する基板回転機構と、前記基板保持機構に保持されている基板に洗浄液を供給する洗浄液供給機構と、洗浄時に基板の少なくとも端面に当接される、スポンジ状樹脂からなるブラシを有する洗浄機構と、前記ブラシを圧縮するブラシ圧縮機構と、前記ブラシ圧縮機構による前記ブラシの圧縮力を変化させて前記ブラシによる洗浄を制御する制御部とを具備し、前記制御部は、前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる初期状態での圧縮力と、前記ブラシの硬度を増加させ、前記ブラシによる洗浄力が増加する圧縮力との間で、前記基板の洗浄中に連続的にまたは段階的に前記ブラシの圧縮力を変化させて洗浄を制御することを特徴とする基板洗浄装置を提供する。 In order to solve the above problems, according to a first aspect of the present invention, there is provided a substrate cleaning apparatus for brush cleaning at least an end surface of a substrate, the substrate holding mechanism holding the substrate rotatably, and holding the substrate on the substrate holding mechanism. A substrate rotating mechanism for rotating the substrate that has been moved, a cleaning liquid supply mechanism for supplying a cleaning liquid to the substrate held by the substrate holding mechanism, and a brush made of sponge-like resin that comes into contact with at least the end surface of the substrate during cleaning A cleaning mechanism that compresses the brush, and a control unit that controls the cleaning by the brush by changing the compression force of the brush by the brush compression mechanism , Increase the compressive force in the initial state where a compressive force is not applied to the brush, or a cleaning effect comparable to that when the compressive force is not applied, and the hardness of the brush. Between the compressive force detergency by sheet increases, it provides a substrate cleaning apparatus and controls the continuously or cleaned stepwise changing the compressive force of the brush during cleaning of the substrate To do.

また、前記ブラシは、円筒状の小径部と前記小径部に連続する円筒状の大径部とを有し、前記小径部の周面で基板の端面を洗浄し、前記大径部の前記小径部との接続面により基板の裏面または表面の周縁部を洗浄するものとすることができる。この場合に、前記ブラシは、圧縮されることにより前記接続面が変形し、その変形部分により基板の周縁部を局部的に洗浄することが可能であり、前記制御部は、前記ブラシ圧縮機構による圧縮力の変化により前記変形部分の位置を制御するようにすることができる。前記ブラシは、円筒状をなし、その外周面で基板の端面を洗浄するようなものであっても良い。 Further, the brush has a cylindrical small diameter portion and a cylindrical large diameter portion continuous with the small diameter portion, and cleans an end surface of the substrate with a peripheral surface of the small diameter portion, and the small diameter of the large diameter portion. The peripheral surface of the back surface or the front surface of the substrate can be cleaned by the connection surface with the portion. In this case, the brush is deformed before Kise' continued surface by being compressed, it is possible to locally cleaning the periphery of the substrate by the deformed portion, the control unit, the brush compression It is possible to control the position of the deformed portion by changing the compression force by the mechanism. The brush may have a cylindrical shape, and the outer peripheral surface of the brush may clean the end surface of the substrate.

さらにまた、前記ブラシ圧縮機構は、前記ブラシを上下に狭時する一対の押圧部材と、前記押圧部材の少なくとも一方を移動させるアクチュエータとを有する構成とすることができる。また、前記洗浄機構は、前記ブラシを回転させるブラシ回転機構と、前記ブラシを基板に対して接離させる接離機構とを有し、前記ブラシ回転機構により回転された前記ブラシを、前記接離機構により前記基板回転機構により回転されている基板に接触させて、その状態で基板の少なくとも端面を洗浄する構成とすることができる。また、前記制御部は、前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる圧縮力を付与し、前記基板の端面および周縁部の全体を洗浄した後、連続的にまたは段階的に前記ブラシの圧縮力を上昇させて前記ブラシの硬度を増加させ、前記ブラシによる基板の周縁部における洗浄部位を制御するようにもできる。また、前記ブラシの圧縮力を上昇させて洗浄を行った後、前記ブラシの圧縮力を低下させ、前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる圧縮力を付与し、前記基板の端面および周縁部の全体を洗浄するようにすることもできる。 Furthermore, the brush compression mechanism may include a pair of pressing members that narrow the brush up and down and an actuator that moves at least one of the pressing members. The cleaning mechanism includes a brush rotating mechanism for rotating the brush and an contacting / separating mechanism for contacting / separating the brush with respect to the substrate, and the brush rotated by the brush rotating mechanism removes the contacting / separating mechanism. The mechanism can be configured to contact the substrate rotated by the substrate rotation mechanism and to clean at least the end surface of the substrate in that state. In addition, the control unit does not apply a compressive force to the brush, or applies a compressive force that provides a cleaning effect comparable to that when no compressive force is applied, and cleans the entire end surface and peripheral edge of the substrate. Thereafter, the brush compressive force is increased continuously or stepwise to increase the hardness of the brush, and the cleaning portion at the peripheral edge of the substrate by the brush can be controlled. In addition, after cleaning by increasing the compressive force of the brush, the compressive force of the brush is decreased, and no cleaning force is applied to the brush. It is also possible to apply a compressive force to be washed and clean the entire end face and peripheral edge of the substrate.

本発明の第2の観点では、基板に洗浄液を供給し、スポンジ状樹脂からなるブラシを回転されている基板の少なくとも端面に接触させて洗浄する基板洗浄方法であって、前記ブラシは圧縮可能に設けられ、洗浄時に前記ブラシの圧縮力を変化させて前記ブラシによる洗浄を制御しながら洗浄し、前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる初期状態での圧縮力と、前記ブラシの硬度を増加させ、前記ブラシによる洗浄力が増加する圧縮力との間で、前記基板の洗浄中に連続的にまたは段階的に前記ブラシの圧縮力を変化させて洗浄することを特徴とする基板洗浄方法を提供する。 According to a second aspect of the present invention, there is provided a substrate cleaning method in which a cleaning liquid is supplied to a substrate and a brush made of sponge-like resin is brought into contact with at least an end surface of the substrate being rotated, and the brush is compressible. Cleaning is performed while changing the compression force of the brush at the time of cleaning and controlling the cleaning by the brush, and a cleaning effect equivalent to that when no compression force is applied to the brush or when no compression force is applied is obtained. The compression force of the brush is continuously or stepwise during the cleaning of the substrate between the compression force in the initial state and the compression force that increases the hardness of the brush and increases the cleaning force by the brush. Provided is a substrate cleaning method characterized by changing and cleaning .

本発明の第3の観点では、基板に洗浄液を供給し、スポンジ状樹脂からなるブラシを回転させつつ、回転されている基板の少なくとも端面に接触させて洗浄する基板洗浄方法であって、前記ブラシは圧縮可能に設けられ、基板の状態に応じて前記ブラシの圧縮力を変化させて前記ブラシによる洗浄を制御し、前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる初期状態での圧縮力と、前記ブラシの硬度を増加させ、前記ブラシによる洗浄力が増加する圧縮力との間で、前記基板の洗浄中に連続的にまたは段階的に前記ブラシの圧縮力を変化させて洗浄することを特徴とする基板洗浄方法を提供する。 According to a third aspect of the present invention, there is provided a substrate cleaning method in which a cleaning liquid is supplied to a substrate, and a brush made of sponge-like resin is rotated and brought into contact with at least an end surface of the rotating substrate, and the brush is cleaned. Is provided so as to be compressible, and the cleaning force by the brush is controlled by changing the compressive force of the brush according to the state of the substrate, and the compressive force is not applied to the brush, or the same degree as when the compressive force is not applied. Between the compressive force in an initial state in which a cleaning effect is obtained and the compressive force that increases the hardness of the brush and increases the cleaning force by the brush, continuously or stepwise during the cleaning of the substrate. Provided is a substrate cleaning method, wherein cleaning is performed by changing the compression force of a brush .

また、前記ブラシは、円筒状の小径部と前記小径部に連続する円筒状の大径部とを有し、前記小径部の周面で基板の端面を洗浄し、前記大径部の前記小径部との接続面により基板の裏面または表面の周縁部を洗浄するものとすることができる。この場合に、前記ブラシは、圧縮されることにより前記接続面が変形し、その変形部分により基板の周縁部を局部的に洗浄することが可能であり、前記ブラシに対する圧縮力を変化させることにより前記変形部分の位置を変化させて洗浄するようにすることができる。前記ブラシは円筒状をなし、その外周面で基板の端面を洗浄するものであってもよい。また、前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる圧縮力を付与し、前記基板の端面および周縁部の全体を洗浄した後、連続的にまたは段階的に前記ブラシの圧縮力を上昇させて前記ブラシの硬度を増加させ、前記ブラシによる基板の周縁部における洗浄部位を制御することもできる。また、前記ブラシの圧縮力を上昇させて洗浄を行った後、前記ブラシの圧縮力を低下させ、前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる圧縮力を付与し、前記基板の端面および周縁部の全体を洗浄するようにすることもできる。 Further, the brush has a cylindrical small diameter portion and a cylindrical large diameter portion continuous with the small diameter portion, and cleans an end surface of the substrate with a peripheral surface of the small diameter portion, and the small diameter of the large diameter portion. The peripheral surface of the back surface or the front surface of the substrate can be cleaned by the connection surface with the portion. In this case, when the brush is compressed, the connecting surface is deformed, and the peripheral portion of the substrate can be locally cleaned by the deformed portion, and the compressive force on the brush is changed. Cleaning can be performed by changing the position of the deformed portion. The brush may have a cylindrical shape, and the end surface of the substrate may be cleaned by the outer peripheral surface thereof. In addition, after applying a compressive force that does not apply a compressive force to the brush or obtaining a cleaning effect comparable to that when applying a compressive force, and cleaning the entire end surface and peripheral edge of the substrate, continuously. Alternatively, the cleaning force at the peripheral edge of the substrate by the brush can be controlled by increasing the compression force of the brush stepwise to increase the hardness of the brush. In addition, after cleaning by increasing the compressive force of the brush, the compressive force of the brush is decreased, and no cleaning force is applied to the brush. It is also possible to apply a compressive force to be washed and clean the entire end face and peripheral edge of the substrate.

本発明の第4の観点では、コンピュータ上で動作し、基板洗浄装置を制御するプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、上記第2の観点または第3の観点の基板洗浄方法が行われるようにコンピュータに前記基板洗浄装置を制御させることを特徴とする記憶媒体を提供する。 According to a fourth aspect of the present invention, there is provided a storage medium that stores a program that operates on a computer and controls a substrate cleaning apparatus, and the program is executed according to the second aspect or the third aspect at the time of execution. Provided is a storage medium characterized by causing a computer to control the substrate cleaning apparatus so that the substrate cleaning method is performed.

本発明によれば、少なくとも基板の端面に当接させてブラシ洗浄を行う際に、スポンジ状樹脂からなるブラシを用い、このブラシをブラシ圧縮機構により圧縮可能とし、ブラシの圧縮力を変化させて前記ブラシによる洗浄を制御するので、ブラシ洗浄の最適化を図ることができ、少なくとも基板端面に付着した付着物の除去を効果的に行うことができる。   According to the present invention, when brush cleaning is performed by contacting at least the end surface of the substrate, a brush made of sponge-like resin is used, and the brush can be compressed by the brush compression mechanism, and the compression force of the brush is changed. Since the cleaning by the brush is controlled, the brush cleaning can be optimized, and at least the deposits adhering to the end face of the substrate can be effectively removed.

例えば、基板の洗浄中にブラシの圧縮力を変化させて洗浄を制御することにより、時間的な洗浄力の制御を行うことができる。具体的には、最初にブラシに圧縮力を与えずに、除去しやすい付着物を除去し、徐々に圧縮力を高めて洗浄力を高めていくことにより、より強固な付着物を除去するというような手法をとることが可能である。また、洗浄位置の制御を行うこともできる。具体的には、円筒状の小径部と前記小径部に連続する円筒状の大径部とを有するブラシを用い、ブラシ圧縮機構により前記大径部の接続面を変形させて、その変形部分により基板の周縁部を局部的に洗浄すれば、ブラシの圧縮力を変化させることにより、洗浄位置を制御して基板の周縁部に強固に付着している付着物を効果的に除去することができる。   For example, the temporal cleaning force can be controlled by controlling the cleaning by changing the compressive force of the brush during the cleaning of the substrate. Specifically, it removes the deposits that are easy to remove without first applying a compressive force to the brush, and gradually increases the compressive force to increase the cleaning power, thereby removing the stronger deposits. It is possible to take such a method. Also, the cleaning position can be controlled. Specifically, using a brush having a cylindrical small-diameter portion and a cylindrical large-diameter portion continuous to the small-diameter portion, the connecting surface of the large-diameter portion is deformed by a brush compression mechanism, and the deformed portion If the peripheral edge of the substrate is washed locally, the cleaning position can be controlled by changing the compressive force of the brush, so that the deposits firmly attached to the peripheral edge of the substrate can be effectively removed. .

また、基板の状態に応じてブラシの圧縮力を変化させてブラシによる洗浄を制御するようにすることもできる。具体的には、基板の種類や付着物の付き方等の基板の状態に応じてブラシの圧縮力を変化させ、洗浄を制御する。これにより、基板の状態に応じて適切にブラシ洗浄を行うことができる。   Further, the cleaning with the brush can be controlled by changing the compression force of the brush according to the state of the substrate. More specifically, the cleaning force is controlled by changing the compression force of the brush in accordance with the state of the substrate such as the type of the substrate and how the deposits are attached. Thereby, brush cleaning can be appropriately performed according to the state of the substrate.

以下、添付図面を参照して、本発明の実施形態について具体的に説明する。図1は本発明の一実施形態に係るウエハ洗浄装置を示す概略構成図、図2はその内部の平面図である。   Embodiments of the present invention will be specifically described below with reference to the accompanying drawings. FIG. 1 is a schematic configuration diagram showing a wafer cleaning apparatus according to an embodiment of the present invention, and FIG. 2 is a plan view of the inside thereof.

このウエハ洗浄装置1はチャンバ2を有し、このチャンバ2の中には、被洗浄基板である半導体ウエハ(以下単にウエハと記す)Wを水平状態で真空吸着により吸着保持するためのスピンチャック3が設けられている。このスピンチャック3は、軸3aを介してチャンバ2の下方に設けられたモーター4により回転可能となっている。また、チャンバ2内には、スピンチャック3に保持されたウエハWを覆うようにカップ5が設けられている。カップ5の底部には、排気および排液のための排気・排液管6が、チャンバ2の下方へ延びるように設けられている。チャンバ2の側壁には、ウエハWを搬入出するための搬入出口7が設けられている。なお、軸3aとカップ5の底部およびチャンバ2の底部との間には流体シール8が設けられている。   This wafer cleaning apparatus 1 has a chamber 2, and a spin chuck 3 for adsorbing and holding a semiconductor wafer (hereinafter simply referred to as a wafer) W as a substrate to be cleaned by vacuum suction in a horizontal state. Is provided. The spin chuck 3 can be rotated by a motor 4 provided below the chamber 2 via a shaft 3a. A cup 5 is provided in the chamber 2 so as to cover the wafer W held by the spin chuck 3. An exhaust / drain pipe 6 for exhaust and drainage is provided at the bottom of the cup 5 so as to extend below the chamber 2. On the side wall of the chamber 2, a loading / unloading port 7 for loading / unloading the wafer W is provided. A fluid seal 8 is provided between the shaft 3 a and the bottom of the cup 5 and the bottom of the chamber 2.

また、このウエハ洗浄装置1は、さらに、洗浄液を供給する洗浄液供給機構10と、ウエハWの端面を含む周縁部をブラシ洗浄する洗浄機構20とを有している。   The wafer cleaning apparatus 1 further includes a cleaning liquid supply mechanism 10 that supplies a cleaning liquid, and a cleaning mechanism 20 that brush-cleans a peripheral portion including the end surface of the wafer W.

洗浄液供給機構10は、カップ5の上方に設けられた表面側洗浄液ノズル11aとスピンチャック3に保持されたウエハWの裏面側に設けられた裏面側洗浄液ノズル11bとを有し、これら表面側洗浄液ノズル11aおよび裏面側洗浄液ノズル11bには、それぞれ表面側洗浄液供給配管13aおよび裏面側洗浄液供給配管13bが接続されている。これら表面側洗浄液供給配管13aおよび裏面側洗浄液供給配管13bの他端は共通の洗浄液供給供給源12に接続されている。そして、洗浄液供給源12から表面側洗浄液供給配管13aを介して表面側洗浄液ノズル11aからウエハWの表面中心付近に洗浄液が供給され、裏面側洗浄液供給配管13bを介して裏面側洗浄液ノズル11bからウエハWの裏面に洗浄液が供給される。表面側洗浄液供給配管13aおよび裏面側洗浄液供給配管13bには、それぞれバルブ14a,14bが介在されている。洗浄液としては、純水や薬液等を用いることができる。   The cleaning liquid supply mechanism 10 includes a front surface side cleaning liquid nozzle 11 a provided above the cup 5 and a back surface side cleaning liquid nozzle 11 b provided on the back surface side of the wafer W held by the spin chuck 3. A front surface side cleaning liquid supply pipe 13a and a back surface side cleaning liquid supply pipe 13b are connected to the nozzle 11a and the back surface side cleaning liquid nozzle 11b, respectively. The other ends of the front surface side cleaning liquid supply pipe 13 a and the back surface side cleaning liquid supply pipe 13 b are connected to a common cleaning liquid supply source 12. Then, the cleaning liquid is supplied from the cleaning liquid supply source 12 to the vicinity of the center of the surface of the wafer W from the front surface side cleaning liquid nozzle 11a through the front surface side cleaning liquid supply pipe 13a, and from the back surface side cleaning liquid nozzle 11b to the wafer from the rear surface side cleaning liquid supply pipe 13b. A cleaning liquid is supplied to the back surface of W. Valves 14a and 14b are interposed in the front surface side cleaning liquid supply pipe 13a and the back surface side cleaning liquid supply pipe 13b, respectively. As the cleaning liquid, pure water, chemical liquid, or the like can be used.

洗浄機構20は、ウエハWの端面を含む周縁部を洗浄するためのスポンジ状樹脂からなるブラシ21と、ブラシ21を回転可能に支持する回転支持部材22と、ブラシ21を上下方向に押圧する一対の押圧部材23a,23bと、押圧部材23a,23bを介してブラシ21に圧縮力を与えるためのシリンダ24と、ブラシ21を回動させるための回動アーム25と、回動アーム25の回動軸となる回動シャフトを内蔵するシャフト部26と、回動シャフトを回転させて回動アーム25を回動させる回動機構および回動アーム25を昇降させる昇降機構を内蔵する回動・昇降部27とを有している。   The cleaning mechanism 20 includes a brush 21 made of sponge-like resin for cleaning the peripheral portion including the end face of the wafer W, a rotation support member 22 that rotatably supports the brush 21, and a pair that presses the brush 21 in the vertical direction. Pressing members 23a and 23b, a cylinder 24 for applying a compressive force to the brush 21 via the pressing members 23a and 23b, a rotating arm 25 for rotating the brush 21, and a rotation of the rotating arm 25 Rotating / elevating part incorporating a shaft part 26 having a turning shaft as a shaft, a turning mechanism for turning the turning shaft to turn the turning arm 25, and a lifting mechanism for raising and lowering the turning arm 25. 27.

図3は、洗浄機構をさらに詳細に示す断面図である。回転支持部材22は、鉛直方向に延びる円筒状をなし、その内部にシリンダ24のピストン24aが鉛直方向に貫通して延びている。このピストン24aにはブラシ21の中央に鉛直方向に延びるブラシ支持部材21aが接続されており、ブラシ支持部材21aの下端は下側の押圧部材23bの中央に固定されている。また、上側の押圧部材23aは回転支持部材22の下端面に固定され、ブラシ支持部材21aと上側の押圧部材23aの間はフリーとなっている。したがって、シリンダ24のピストン24aを退入させることにより、下側の押圧部材23bがブラシ支持部材21aとともに上昇し、上側の押圧部材23aと下側の押圧部材23bに挟まれているブラシ21は圧縮される。すなわち押圧部材23a,23bとシリンダ24とがブラシ圧縮機構として機能する。なお、押圧部材23a,23bの両方を移動させてブラシ21を圧縮してもよい。また、シリンダ24の代わりに他のアクチュエータを用いてもよい。   FIG. 3 is a sectional view showing the cleaning mechanism in more detail. The rotation support member 22 has a cylindrical shape extending in the vertical direction, and a piston 24a of the cylinder 24 extends through the inside thereof in the vertical direction. The piston 24a is connected to a brush support member 21a extending in the vertical direction at the center of the brush 21, and the lower end of the brush support member 21a is fixed to the center of the lower pressing member 23b. The upper pressing member 23a is fixed to the lower end surface of the rotation support member 22, and the space between the brush support member 21a and the upper pressing member 23a is free. Therefore, by retracting the piston 24a of the cylinder 24, the lower pressing member 23b rises together with the brush support member 21a, and the brush 21 sandwiched between the upper pressing member 23a and the lower pressing member 23b is compressed. Is done. That is, the pressing members 23a and 23b and the cylinder 24 function as a brush compression mechanism. Note that the brush 21 may be compressed by moving both of the pressing members 23a and 23b. Further, instead of the cylinder 24, another actuator may be used.

回動アーム25は水平に延びる角筒状をなし、その先端部分に回転支持部材22が回転可能に設けられている。すなわち、回転支持部材22は、回動アーム25に取り付けられた一対のベアリング31a,31bにより回転可能に支持されている。回転支持部材22の中央部にはプーリー32が外嵌されており、このプーリー32にベルト33が巻き掛けられている。このベルト33は、回動アーム25の内部空間を水平に延びている。また、回動アーム25の内部には、その底板に固定されるようにブラシ回転用モーター34が設けられており、ブラシ回転用モーター34の回転軸34aにはプーリー35が取り付けられていて、上記ベルト33はプーリー35に巻き掛けられている。したがって、モーター34を駆動させることによりベルト33を介して回転支持部材22が回転され、これにともなってブラシ21が回転される。   The rotating arm 25 has a horizontally extending rectangular tube shape, and a rotation support member 22 is rotatably provided at a tip portion thereof. In other words, the rotation support member 22 is rotatably supported by a pair of bearings 31 a and 31 b attached to the rotation arm 25. A pulley 32 is fitted around the center of the rotation support member 22, and a belt 33 is wound around the pulley 32. The belt 33 extends horizontally in the internal space of the rotating arm 25. In addition, a brush rotation motor 34 is provided inside the rotation arm 25 so as to be fixed to the bottom plate, and a pulley 35 is attached to a rotation shaft 34a of the brush rotation motor 34. The belt 33 is wound around the pulley 35. Therefore, by driving the motor 34, the rotation support member 22 is rotated via the belt 33, and the brush 21 is rotated accordingly.

回動アーム25の基端部分には、鉛直に延びる回動シャフト38が、回動アーム25内の上下に設けられた一対の固定部材39により固定されている。回動シャフト38はシャフト部26を通って回動・昇降部27まで延びている。   A vertically extending rotating shaft 38 is fixed to a base end portion of the rotating arm 25 by a pair of fixing members 39 provided on the upper and lower sides of the rotating arm 25. The rotating shaft 38 extends through the shaft portion 26 to the rotating / lifting portion 27.

回動・昇降部27は、シャフト部26の下方に連続する筐体41と、その内部に設けられた回動機構42および昇降機構45とを有している。回動機構42は、回動用モーター43を有しており、その回転軸が回動シャフト38の下端に接続されており、回動用モーター43を回転駆動することにより、回動シャフト38に固定された回動アーム25が回動するようになっている。また、昇降機構45は、回動シャフト38をベアリング47を介して回転可能に支持する支持部材46と、筐体41の底部から鉛直上方に延び、支持部材46が螺合するボールネジ48と、筐体41の底板に固定され、ボールネジ48を回転させる昇降用モーター49と、筐体41内に鉛直に設けられ、支持部材46をガイドするガイド部材50とを有している。すなわち、昇降機構45はボールネジ機構によって回動シャフト38を昇降し、これにともなって回動アーム25を昇降するようになっている。   The rotating / elevating unit 27 includes a casing 41 that continues below the shaft unit 26, and a rotating mechanism 42 and an elevating mechanism 45 that are provided therein. The rotation mechanism 42 has a rotation motor 43, the rotation axis of which is connected to the lower end of the rotation shaft 38, and is fixed to the rotation shaft 38 by driving the rotation motor 43 to rotate. The rotating arm 25 is rotated. The elevating mechanism 45 includes a support member 46 that rotatably supports the rotating shaft 38 via a bearing 47, a ball screw 48 that extends vertically upward from the bottom of the housing 41, and is screwed with the support member 46, and a housing. A lifting motor 49 that is fixed to the bottom plate of the body 41 and rotates the ball screw 48, and a guide member 50 that is provided vertically in the housing 41 and guides the support member 46. That is, the elevating mechanism 45 elevates and lowers the rotating shaft 38 by a ball screw mechanism, and accordingly elevates the rotating arm 25.

図4は、ブラシ21を拡大して示す断面図であり、(a)は圧縮していない状態、(b)は圧縮した状態を示す。ブラシ21は、円筒状をなす小径部21bと、小径部21bの下方に連続する円筒状をなす大径部21cとを有している。そして、小径部21bの周面がウエハWの端面洗浄部として機能し、大径部21cの上面すなわち小径部21bの接続面がウエハWの裏面周縁洗浄部として機能する。(b)に示すようにブラシ21を押圧部材23a,23bにより押圧して圧縮していくことによりブラシ21の硬度が上昇し、洗浄力を上昇させることができる。ブラシ21は、上述したようにスポンジ状の樹脂からなり、ポリビニルアルコール(PVA)を好適に用いることができる。ブラシ21に適用可能な他の樹脂としては、ポリエチレン(PE)を挙げることができる。また、ブラシ支持部材21aおよび押圧部材23a,23bは、ある程度の剛性が必要であるため、金属や硬質樹脂を用いることができる。ただし、金属はウエハWに対するコンタミネーションとなるおそれがあるから、硬質樹脂、例えばポリエーテルエーテルケトン(PEEK)やポリエチレンテレフタレート(PET)等が好ましい。   4A and 4B are cross-sectional views showing the brush 21 in an enlarged manner, in which FIG. 4A shows an uncompressed state and FIG. 4B shows a compressed state. The brush 21 has a cylindrical small diameter portion 21b and a cylindrical large diameter portion 21c continuous below the small diameter portion 21b. The peripheral surface of the small diameter portion 21b functions as an end surface cleaning portion of the wafer W, and the upper surface of the large diameter portion 21c, that is, the connection surface of the small diameter portion 21b functions as a back surface peripheral edge cleaning portion. As shown in (b), the brush 21 is pressed and compressed by the pressing members 23a and 23b, whereby the hardness of the brush 21 is increased and the cleaning power can be increased. The brush 21 is made of a sponge-like resin as described above, and polyvinyl alcohol (PVA) can be suitably used. Examples of other resins applicable to the brush 21 include polyethylene (PE). Further, since the brush support member 21a and the pressing members 23a and 23b need a certain degree of rigidity, metal or hard resin can be used. However, since the metal may cause contamination with the wafer W, a hard resin such as polyether ether ketone (PEEK) or polyethylene terephthalate (PET) is preferable.

制御部30は、図5のブロック図に示すように、コントローラ61と、ユーザーインターフェース62と、記憶部63とを有している。コントローラ61は、基板洗浄装置1の各構成部、例えばモーター4、シリンダ24、ブラシ回転用モーター34、回動用モーター43、昇降用モーター49等を制御する。また、ユーザーインターフェース62はコントローラ61に接続され、オペレータがウエハ洗浄装置1を管理するためにコマンド等の入力操作を行うキーボードや、ウエハ洗浄装置1の稼働状況を可視化して表示するディスプレイ等からなる。また、記憶部63もコントローラ61に接続され、その中にウエハ洗浄装置1の各構成部の制御対象を制御するための制御プログラムや、ウエハ洗浄装置1に所定の処理を行わせるためのプログラムすなわち処理レシピが格納されている。処理レシピは記憶部63の中の記憶媒体に記憶されている。記憶媒体は、ハードディスクのような固定的なものであってもよいし、CDROM、DVD、フラッシュメモリ等の可搬性のものであってもよい。また、他の装置から、例えば専用回線を介してレシピを適宜伝送させるようにしてもよい。そして、コントローラ61は、必要に応じて、ユーザーインターフェース62からの指示等にて任意の処理レシピを記憶部63から呼び出して実行させることで、コントローラ61の制御下で、所定の処理が行われる。   As illustrated in the block diagram of FIG. 5, the control unit 30 includes a controller 61, a user interface 62, and a storage unit 63. The controller 61 controls each component of the substrate cleaning apparatus 1, such as the motor 4, the cylinder 24, the brush rotation motor 34, the rotation motor 43, and the lifting motor 49. The user interface 62 is connected to the controller 61 and includes a keyboard on which an operator inputs commands and the like to manage the wafer cleaning apparatus 1, a display that visualizes and displays the operation status of the wafer cleaning apparatus 1, and the like. . The storage unit 63 is also connected to the controller 61, and a control program for controlling the control target of each component of the wafer cleaning apparatus 1, a program for causing the wafer cleaning apparatus 1 to perform predetermined processing, that is, Processing recipe is stored. The processing recipe is stored in a storage medium in the storage unit 63. The storage medium may be a fixed medium such as a hard disk or a portable medium such as a CDROM, DVD, or flash memory. Moreover, you may make it transmit a recipe suitably from another apparatus via a dedicated line, for example. Then, the controller 61 calls and executes an arbitrary processing recipe from the storage unit 63 according to an instruction from the user interface 62 or the like as necessary, and thereby a predetermined process is performed under the control of the controller 61.

本実施形態においては、制御部30の機能のうち、ブラシ21に対する圧縮力を変化させてウエハWの洗浄を制御する機能が特に重要である。すなわち、記憶部63に記憶されている処理レシピに基づいて、コントローラ61からシリンダ24に指令を送り、押圧部材23a,23bによるブラシ21の圧縮力を変化させ、ウエハWの洗浄を制御する。具体的には、洗浄中にリアルタイムでブラシの圧縮力を変化させてウエハWの洗浄を制御することもできるし、ウエハWの状態に関する情報を把握し、その情報に基づいて、その状態に応じてブラシ21の圧縮力を所望の値にしてウエハWの洗浄を制御するようにすることもできる。   In the present embodiment, the function of controlling the cleaning of the wafer W by changing the compressive force applied to the brush 21 among the functions of the control unit 30 is particularly important. That is, based on the process recipe memorize | stored in the memory | storage part 63, instruction | command is sent to the cylinder 24 from the controller 61, the compression force of the brush 21 by the press members 23a and 23b is changed, and the cleaning of the wafer W is controlled. Specifically, cleaning of the wafer W can be controlled by changing the compressive force of the brush in real time during cleaning, and information on the state of the wafer W is grasped, and the state is determined based on the information. Thus, the cleaning force for the wafer W can be controlled by setting the compression force of the brush 21 to a desired value.

次に、このようなウエハ洗浄装置1によるウエハWの洗浄方法について説明する。   Next, a method for cleaning the wafer W by using the wafer cleaning apparatus 1 will be described.

まず、第1の方法について説明する。
チャンバ2にウエハWを搬入し、スピンチャック3にウエハWを保持させる。この際、ブラシ21は待機位置で乾燥防止のため洗浄液を供給された状態で待機している。次いで、シリンダ24による押圧部材23a,23bを介してのブラシ21の圧縮状態を処理レシピに基づいた所定の初期状態とする。
First, the first method will be described.
The wafer W is loaded into the chamber 2, and the wafer W is held by the spin chuck 3. At this time, the brush 21 stands by at a standby position in a state where cleaning liquid is supplied to prevent drying. Next, the compression state of the brush 21 through the pressing members 23a and 23b by the cylinder 24 is set as a predetermined initial state based on the processing recipe.

このようにブラシ21を初期状態とした後、モーター4を駆動させてスピンチャック3とともにウエハWを所定の回転数で回転させ、表面側洗浄液ノズル11aおよび裏面側洗浄液ノズル11bから洗浄液を供給しつつ、ブラシ回転用モーター34により、ブラシ支持部材22とともにブラシ21を回転させる。そして、ブラシ21を回動アーム25をスピンチャック3上のウエハWに向けて回動させてブラシ21の小径部21bの外周をウエハWの端面に押しつけるとともに、昇降機構45により回動アーム25の高さ調節をしてブラシ21の大径部21cの上面をウエハWの裏面周縁部に押しつけ、ブラシ洗浄を開始する。   After the brush 21 is in the initial state as described above, the motor 4 is driven to rotate the wafer W together with the spin chuck 3 at a predetermined number of revolutions while supplying the cleaning liquid from the front surface side cleaning liquid nozzle 11a and the back surface side cleaning liquid nozzle 11b. The brush 21 is rotated together with the brush support member 22 by the brush rotation motor 34. Then, the brush 21 is rotated toward the wafer W on the spin chuck 3 to rotate the brush 21 to press the outer periphery of the small diameter portion 21b of the brush 21 against the end surface of the wafer W. The height is adjusted and the upper surface of the large-diameter portion 21c of the brush 21 is pressed against the peripheral edge of the back surface of the wafer W to start brush cleaning.

このような洗浄処理の最中に、処理レシピに基づいて、シリンダ24によるブラシ21の圧縮力を変化させる。ブラシ21は、洗浄液が供給されて膨潤した状態で圧縮力が付与されると、圧縮力が増加するに従ってブラシ21の硬度が上昇し、洗浄力が高まる。反面、ブラシ21の硬度が高まると弾力が低下するため、ブラシ21がウエハWの端面および裏面周縁部を全体的に洗浄する効果は低下していく。つまり、全体的に洗浄する効果はブラシ21に圧縮力を付与しないほうが高い。このような特性に基づいて、例えば、初期状態ではブラシ21に圧縮力を付与しないか、または圧縮力を付与しない時と同程度の洗浄効果が得られる圧縮力を付与し、ブラシ21が洗浄液により膨潤した状態で、ウエハWの端面および裏面周縁部を全体的に洗浄して付着力の弱い付着物を除去し、次いで、連続的にまたは段階的にブラシ21の圧縮力を上昇してブラシ21の硬度を増加させ、ブラシ21による洗浄力を経時的に増加するように制御する。これにより付着力の強い付着物も除去されていき、ウエハWの端面および裏面周縁部を効果的に洗浄することができる。また、このようにブラシ21の圧縮力を上昇させて洗浄を行った後、圧縮力を低下させ、圧縮力を付与しないか、または圧縮力を付与しない時と同程度の洗浄効果が得られる圧縮力を付与した状態とし、膨潤した状態のブラシ21で洗浄することにより、再付着等で残存している付着物を全体的に除去することで、さらに洗浄効果が上昇する。   During such a cleaning process, the compression force of the brush 21 by the cylinder 24 is changed based on the process recipe. When a compressive force is applied to the brush 21 in a state where the cleaning liquid is supplied and swollen, the hardness of the brush 21 increases as the compressive force increases, and the cleaning power increases. On the other hand, as the hardness of the brush 21 increases, the elasticity decreases, so that the effect of the brush 21 cleaning the end surface and the back surface peripheral portion of the wafer W as a whole decreases. That is, the overall cleaning effect is higher when no compression force is applied to the brush 21. Based on such characteristics, for example, in the initial state, no compression force is applied to the brush 21, or a compression force that provides a cleaning effect comparable to that obtained when no compression force is applied is applied. In the swollen state, the edge of the wafer W and the peripheral edge of the back surface are entirely washed to remove deposits having a weak adhesion force, and then the compression force of the brush 21 is increased continuously or stepwise to increase the brush 21. Is controlled so that the cleaning power of the brush 21 increases with time. As a result, the adhering material having a strong adhesive force is also removed, and the end surface and the peripheral surface of the back surface of the wafer W can be effectively cleaned. Further, after the cleaning is performed by increasing the compressive force of the brush 21 in this way, the compressive force is decreased, and the compressive force is not applied, or the compressive effect that provides the same cleaning effect as when the compressive force is not applied is obtained. By washing with the brush 21 in a swollen state in a state where force is applied, the remaining deposits due to redeposition or the like are removed as a whole, and the cleaning effect is further increased.

また、ブラシ21を圧縮するとブラシ21の硬度が上昇するとともに、図4(b)に示すように、大径部21cの上面が変形して突起部21dが形成される。突起部21dは狭い面積でウエハWの裏面周縁部に接触するため、局部的に洗浄力を著しく上昇させることができる。すなわち、通常はブラシ21が面状にウエハWに接触するが、このように突起部21dが形成することにより、ブラシ21が線状に接触することになり、接触部分のブラシ圧力が非常に高いものとなる。この場合に、ブラシ21の圧縮力を変化させることにより、図6に示すように、突起部21dの当たるウエハWの部位を変化させることができる。   Further, when the brush 21 is compressed, the hardness of the brush 21 is increased, and as shown in FIG. 4B, the upper surface of the large diameter portion 21c is deformed to form a protruding portion 21d. Since the protruding portion 21d contacts the peripheral edge of the back surface of the wafer W with a small area, the cleaning power can be remarkably increased locally. In other words, the brush 21 normally contacts the wafer W in a planar shape, but by forming the protrusion 21d in this way, the brush 21 comes in linear contact, and the brush pressure at the contact portion is very high. It will be a thing. In this case, by changing the compressive force of the brush 21, as shown in FIG. 6, it is possible to change the portion of the wafer W that the protrusion 21d contacts.

以下、より詳細に説明する。図6(a)は比較的小さい圧縮力を与えた状態であり、ブラシ21があまり潰れておらず、突起部21dは小さくかつウエハWの端面に近い位置に形成されている。圧縮力を増加させるにつれて、図6(b)、(c)とブラシ21の潰れ度合いが大きくなり、それにともなって突起部21dが大きくなり、かつウエハWの中心側に移動していく。このようにしてブラシ21の圧縮力を増加させるに従って、突起部21dの位置を移動させることができる。つまり、洗浄処理中にブラシ21の圧縮力を変化させることにより、ウエハWの裏面周縁部における突起部21dによる洗浄部位を制御することができ、これにより効果的な洗浄を行うことができる。   This will be described in more detail below. FIG. 6A shows a state in which a relatively small compressive force is applied, the brush 21 is not crushed so much, and the projection 21 d is small and formed at a position close to the end face of the wafer W. As the compression force is increased, the degree of crushing of the brush 21 and FIGS. 6B and 6C increases, and the protrusion 21d increases accordingly and moves toward the center of the wafer W. Thus, as the compressive force of the brush 21 is increased, the position of the protrusion 21d can be moved. In other words, by changing the compressive force of the brush 21 during the cleaning process, it is possible to control the cleaning portion by the protrusion 21d at the peripheral edge of the back surface of the wafer W, thereby enabling effective cleaning.

次に、第2の方法について説明する。
ここでは、洗浄しようとするウエハWの状態に応じてブラシ21の圧縮力を変化させて洗浄を行う。洗浄前のウエハWの処理やウエハWの種類等により洗浄対象のウエハWの状態(除去すべき付着物の付着状態等)が異なっている。
Next, the second method will be described.
Here, cleaning is performed by changing the compressive force of the brush 21 in accordance with the state of the wafer W to be cleaned. The state of the wafer W to be cleaned (attachment state of deposits to be removed, etc.) differs depending on the processing of the wafer W before cleaning, the type of the wafer W, and the like.

そのため、第2の方法では、まず、洗浄対象のウエハWの状態を予め制御部30のコントローラ61に設定するか、または、適宜の方法でその状態を把握してコントローラ61にその情報を送る。次に、そのウエハWの状態に適した洗浄状態が得られるようにシリンダ24に指令を与えてブラシ21を所定の圧縮力で圧縮する。ブラシ21を圧縮する必要がないときは、圧縮することなく洗浄に供される。   Therefore, in the second method, first, the state of the wafer W to be cleaned is set in the controller 61 of the control unit 30 in advance, or the state is grasped by an appropriate method and the information is sent to the controller 61. Next, a command is given to the cylinder 24 to compress the brush 21 with a predetermined compression force so that a cleaning state suitable for the state of the wafer W is obtained. When it is not necessary to compress the brush 21, it is used for washing without being compressed.

このようにしてブラシ21を所定の状態とした後、モーター4を駆動させてスピンチャック3とともにウエハWを所定の回転数で回転させ、洗浄液ノズル11から洗浄液を供給しつつ、ブラシ回転用モーター34により、ブラシ支持部材22とともにブラシ21を回転させる。そして、ブラシ21を回動アーム25をスピンチャック3上のウエハWに向けて回動させてブラシ21の小径部21bの外周をウエハWの端面に押しつけるとともに、昇降機構45により回動アーム25の高さ調節をしてブラシ21の大径部21cの上面をウエハWの裏面周縁部に押しつけ、ブラシ洗浄を開始する。   After the brush 21 is brought into a predetermined state in this way, the motor 4 is driven to rotate the wafer W together with the spin chuck 3 at a predetermined number of revolutions, and while supplying the cleaning liquid from the cleaning liquid nozzle 11, the brush rotation motor 34 is supplied. Thus, the brush 21 is rotated together with the brush support member 22. Then, the brush 21 is rotated toward the wafer W on the spin chuck 3 to rotate the brush 21 to press the outer periphery of the small diameter portion 21b of the brush 21 against the end surface of the wafer W. The height is adjusted and the upper surface of the large-diameter portion 21c of the brush 21 is pressed against the peripheral edge of the back surface of the wafer W to start brush cleaning.

このようにして、ウエハWの状態に応じてブラシ21の圧縮力を変化させ、洗浄力を制御するので、ウエハWを適切に洗浄することができ、効果的な洗浄処理を実現することができる。   In this way, since the compressive force of the brush 21 is changed according to the state of the wafer W and the cleaning power is controlled, the wafer W can be cleaned appropriately and an effective cleaning process can be realized. .

なお、本発明は、上記実施形態に限定されることなく、種々変形可能である。例えば、上記実施形態では、上部を小径部とし、下部を大径部としたブラシを用いてウエハの端面と裏面周縁部を洗浄した例を示したが、図7に示すように、上部を大径部21b′とし、下部を小径部21c′としたブラシ21′を用い、ウエハ端面と表面周縁部を洗浄することもできる。また、図8に示すように、ウエハWの端面のみを洗浄する全体形状が円筒状のブラシ21″を用いることもできる。   In addition, this invention is not limited to the said embodiment, A various deformation | transformation is possible. For example, in the above-described embodiment, an example in which the edge surface and back surface peripheral edge of the wafer are cleaned using a brush having an upper portion as a small diameter portion and a lower portion as a large diameter portion is shown. However, as shown in FIG. It is also possible to clean the wafer end face and the surface peripheral edge by using a brush 21 'having a diameter portion 21b' and a lower portion having a small diameter portion 21c '. Further, as shown in FIG. 8, a brush 21 ″ having an overall cylindrical shape for cleaning only the end face of the wafer W may be used.

また、上記実施形態では、ウエハの端面および裏面周縁部を洗浄する洗浄機構のみを説明したが、ウエハの表面を洗浄する適宜の洗浄機構を有していてもよい。さらに、上記実施形態の装置に限らず、ウエハの表裏面を洗浄する洗浄装置またはウエハの裏面を洗浄する装置に本発明を適用することもできる。   In the above-described embodiment, only the cleaning mechanism for cleaning the edge surface and the back surface peripheral portion of the wafer has been described. However, an appropriate cleaning mechanism for cleaning the surface of the wafer may be provided. Furthermore, the present invention can be applied not only to the apparatus of the above embodiment, but also to a cleaning apparatus that cleans the front and back surfaces of the wafer or an apparatus that cleans the back surface of the wafer.

さらに、ブラシの圧縮手法についても上記実施形態に限定されることなく種々の方法を採用することができる。   Furthermore, the brush compression method is not limited to the above embodiment, and various methods can be employed.

さらにまた、上記実施形態では、被処理基板として半導体ウエハを適用した場合について示したが、これに限るものではなく、例えば液晶表示装置用ガラス基板に代表されるフラットパネル表示装置用基板等、他の基板にも適用可能である。   Furthermore, in the above-described embodiment, the case where a semiconductor wafer is applied as the substrate to be processed has been described. However, the present invention is not limited to this. For example, a flat panel display device substrate represented by a glass substrate for a liquid crystal display device, and the like. It can also be applied to other substrates.

本発明の一実施形態に係る基板洗浄装置を示す概略構成図。1 is a schematic configuration diagram showing a substrate cleaning apparatus according to an embodiment of the present invention. 本発明の一実施形態に係る基板洗浄装置の内部を示す平面図。The top view which shows the inside of the board | substrate cleaning apparatus which concerns on one Embodiment of this invention. 本発明の一実施形態に係る基板洗浄装置に設けられた洗浄機構をさらに詳細に示す断面図。Sectional drawing which shows the cleaning mechanism provided in the board | substrate cleaning apparatus which concerns on one Embodiment of this invention further in detail. 本発明の一実施形態に係る基板洗浄装置に設けられた洗浄機構のブラシの圧縮していない状態および圧縮した状態を拡大して示す断面図。Sectional drawing which expands and shows the state which the brush of the cleaning mechanism provided in the substrate cleaning apparatus which concerns on one Embodiment of this invention has not compressed, and the compressed state. 本発明の一実施形態に係る基板洗浄装置に設けられた制御部の構成を示すブロック図。The block diagram which shows the structure of the control part provided in the substrate cleaning apparatus which concerns on one Embodiment of this invention. 本発明の一実施形態に係る基板洗浄装置に設けられた洗浄機構のブラシに対する圧縮力を変化させた際の変形の状態を示す模式図。The schematic diagram which shows the state of a deformation | transformation at the time of changing the compressive force with respect to the brush of the washing | cleaning mechanism provided in the board | substrate washing | cleaning apparatus which concerns on one Embodiment of this invention. ブラシの他の構成例を拡大して示す断面図。Sectional drawing which expands and shows the other structural example of a brush. ブラシのさらに他の構成例を拡大して示す断面図。Sectional drawing which expands and shows the further another structural example of a brush.

符号の説明Explanation of symbols

1;ウエハ洗浄装置(基板洗浄装置)
2;チャンバ
3;スピンチャック
4;モータ
5;カップ
6;排気・排液管
7;搬入出口
10;洗浄液供給機構
11a;表面側洗浄液ノズル
11b;裏面側洗浄液ノズル
12;洗浄液供給源
20;洗浄機構
21、21′、21″;ブラシ
21a;ブラシ支持部材
21b、21c′;小径部
21c、21b′;大径部
22;回転支持部材
23a,23b;押圧部材
24;シリンダ
25;回動アーム
26;シャフト部
27;回動・昇降部
30;制御部
61;コントローラ
62;ユーザーインターフェース
63;記憶部
W;半導体ウエハ(基板)
1: Wafer cleaning device (substrate cleaning device)
2; Chamber 3; Spin chuck 4; Motor 5; Cup 6; Exhaust / drain tube 7; Loading / unloading port 10; Cleaning liquid supply mechanism 11a; Front side cleaning liquid nozzle 11b; Back side cleaning liquid nozzle 12; Cleaning liquid supply source 20; Brush 21a; Brush support member 21b, 21c '; Small diameter part 21c, 21b'; Large diameter part 22; Rotation support member 23a, 23b; Press member 24; Cylinder 25; Shaft part 27; Rotation / lifting part 30; Control part 61; Controller 62; User interface 63; Storage part W; Semiconductor wafer (substrate)

Claims (16)

基板の少なくとも端面をブラシ洗浄する基板洗浄装置であって、
基板を回転可能に保持する基板保持機構と、
前記基板保持機構に保持されている基板を回転する基板回転機構と、
前記基板保持機構に保持されている基板に洗浄液を供給する洗浄液供給機構と、
洗浄時に基板の少なくとも端面に当接される、スポンジ状樹脂からなるブラシを有する洗浄機構と、
前記ブラシを圧縮するブラシ圧縮機構と、
前記ブラシ圧縮機構による前記ブラシの圧縮力を変化させて前記ブラシによる洗浄を制御する制御部と
を具備し、
前記制御部は、前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる初期状態での圧縮力と、前記ブラシの硬度を増加させ、前記ブラシによる洗浄力が増加する圧縮力との間で、前記基板の洗浄中に連続的にまたは段階的に前記ブラシの圧縮力を変化させて洗浄を制御することを特徴とする基板洗浄装置。
A substrate cleaning apparatus for brush cleaning at least an end surface of a substrate,
A substrate holding mechanism for rotatably holding the substrate;
A substrate rotation mechanism for rotating the substrate held by the substrate holding mechanism;
A cleaning liquid supply mechanism for supplying a cleaning liquid to the substrate held by the substrate holding mechanism;
A cleaning mechanism having a brush made of sponge-like resin that is brought into contact with at least an end surface of the substrate at the time of cleaning;
A brush compression mechanism for compressing the brush;
A controller that controls the cleaning by the brush by changing the compression force of the brush by the brush compression mechanism ,
The control unit increases the compressive force in the initial state in which a compressive force is not applied to the brush, or a cleaning effect equivalent to that obtained when the compressive force is not applied, and the hardness of the brush, and the brush is cleaned. A substrate cleaning apparatus , wherein the cleaning is controlled by changing the compression force of the brush continuously or stepwise during the cleaning of the substrate between the compressing force and the increasing force .
前記ブラシは、円筒状の小径部と前記小径部に連続する円筒状の大径部とを有し、前記小径部の周面で基板の端面を洗浄し、前記大径部の前記小径部との接続面により基板の裏面または表面の周縁部を洗浄することを特徴とする請求項1に記載の基板洗浄装置。 The brush has a cylindrical small-diameter portion and a cylindrical large-diameter portion continuous to the small-diameter portion, and cleans an end surface of the substrate with a peripheral surface of the small-diameter portion, and the small-diameter portion of the large-diameter portion The substrate cleaning apparatus according to claim 1, wherein the peripheral surface of the back surface or the front surface of the substrate is cleaned by the connection surface. 前記ブラシは、圧縮されることにより前記接続面が変形し、その変形部分により基板の周縁部を局部的に洗浄することが可能であり、前記制御部は、前記ブラシ圧縮機構による圧縮力の変化により前記変形部分の位置を制御することを特徴とする請求項2に記載の基板洗浄装置。 The connecting surface of the brush is deformed by being compressed, and the peripheral portion of the substrate can be locally cleaned by the deformed portion, and the control unit can change the compression force by the brush compression mechanism. The substrate cleaning apparatus according to claim 2 , wherein the position of the deformed portion is controlled by the step. 前記ブラシは、円筒状をなし、その外周面で基板の端面を洗浄することを特徴とする請求項1に記載の基板洗浄装置。 The substrate cleaning apparatus according to claim 1, wherein the brush has a cylindrical shape and cleans an end surface of the substrate with an outer peripheral surface thereof. 前記ブラシ圧縮機構は、前記ブラシを上下に狭時する一対の押圧部材と、前記押圧部材の少なくとも一方を移動させるアクチュエータとを有することを特徴とする請求項1から請求項4のいずれか1項に記載の基板洗浄装置。 The said brush compression mechanism has a pair of press member which narrows the said brush up and down, and an actuator which moves at least one of the said press member, The any one of Claims 1-4 characterized by the above-mentioned. A substrate cleaning apparatus according to claim 1. 前記洗浄機構は、前記ブラシを回転させるブラシ回転機構と、前記ブラシを基板に対して接離させる接離機構とを有し、前記ブラシ回転機構により回転された前記ブラシを、前記接離機構により前記基板回転機構により回転されている基板に接触させて、その状態で基板の少なくとも端面を洗浄することを特徴とする請求項1から請求項5のいずれか1項に記載の基板洗浄装置。 The cleaning mechanism includes a brush rotating mechanism that rotates the brush, and an contacting / separating mechanism that contacts and separates the brush from the substrate, and the brush rotated by the brush rotating mechanism is moved by the contacting / separating mechanism. The substrate cleaning apparatus according to claim 1, wherein at least an end surface of the substrate is cleaned in contact with the substrate rotated by the substrate rotating mechanism. 前記制御部は、前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる圧縮力を付与し、前記基板の端面および周縁部の全体を洗浄した後、連続的にまたは段階的に前記ブラシの圧縮力を上昇させて前記ブラシの硬度を増加させ、前記ブラシによる基板の周縁部における洗浄部位を制御することを特徴とする請求項1から請求項6のいずれか一項に記載の基板洗浄装置。The controller does not apply a compressive force to the brush, or after applying a compressive force that provides a cleaning effect comparable to that when no compressive force is applied, and cleaning the entire end surface and peripheral edge of the substrate, 7. The cleaning portion of the peripheral portion of the substrate by the brush is controlled by increasing the hardness of the brush by continuously or stepwise increasing the compression force of the brush. The substrate cleaning apparatus according to any one of the above. 前記ブラシの圧縮力を上昇させて洗浄を行った後、前記ブラシの圧縮力を低下させ、前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる圧縮力を付与し、前記基板の端面および周縁部の全体を洗浄することを特徴とする請求項1から請求項7のいずれか一項に記載の基板洗浄装置。After performing cleaning by increasing the compressive force of the brush, the compressive force of the brush is decreased and the compressive force is not applied to the brush, or a compressive effect that is equivalent to that when no compressive force is applied is obtained. The substrate cleaning apparatus according to any one of claims 1 to 7, wherein a force is applied to clean the entire end surface and peripheral edge of the substrate. 基板に洗浄液を供給し、スポンジ状樹脂からなるブラシを回転されている基板の少なくとも端面に接触させて洗浄する基板洗浄方法であって、
前記ブラシは圧縮可能に設けられ、洗浄時に前記ブラシの圧縮力を変化させて前記ブラシによる洗浄を制御しながら洗浄し、
前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる初期状態での圧縮力と、前記ブラシの硬度を増加させ、前記ブラシによる洗浄力が増加する圧縮力との間で、前記基板の洗浄中に連続的にまたは段階的に前記ブラシの圧縮力を変化させて洗浄することを特徴とする基板洗浄方法。
A substrate cleaning method in which a cleaning liquid is supplied to a substrate and a brush made of a sponge-like resin is brought into contact with at least an end surface of the rotating substrate and cleaned.
The brush is provided so as to be compressible, and cleaning is performed while controlling the cleaning by the brush by changing the compression force of the brush at the time of cleaning ,
Compression that does not apply compressive force to the brush, or compresses the initial state in which a cleaning effect equivalent to that when no compressive force is applied, and the hardness of the brush is increased, thereby increasing the cleaning force by the brush. A method for cleaning a substrate, wherein the substrate is cleaned by changing the compression force of the brush continuously or stepwise during the cleaning of the substrate.
基板に洗浄液を供給し、スポンジ状樹脂からなるブラシを回転させつつ、回転されている基板の少なくとも端面に接触させて洗浄する基板洗浄方法であって、
前記ブラシは圧縮可能に設けられ、基板の状態に応じて前記ブラシの圧縮力を変化させて前記ブラシによる洗浄を制御し、
前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる初期状態での圧縮力と、前記ブラシの硬度を増加させ、前記ブラシによる洗浄力が増加する圧縮力との間で、前記基板の洗浄中に連続的にまたは段階的に前記ブラシの圧縮力を変化させて洗浄することを特徴とする基板洗浄方法。
A substrate cleaning method for supplying a cleaning liquid to a substrate, rotating a brush made of sponge-like resin, and contacting and cleaning at least an end surface of the rotated substrate,
The brush is provided so as to be compressible, and the cleaning force by the brush is controlled by changing the compression force of the brush according to the state of the substrate ,
Compression that does not apply compressive force to the brush, or compresses the initial state in which a cleaning effect equivalent to that when no compressive force is applied, and the hardness of the brush is increased, thereby increasing the cleaning force by the brush. A method for cleaning a substrate, wherein the substrate is cleaned by changing the compression force of the brush continuously or stepwise during the cleaning of the substrate.
前記ブラシは、円筒状の小径部と前記小径部に連続する円筒状の大径部とを有し、前記小径部の周面で基板の端面を洗浄し、前記大径部の前記小径部との接続面により基板の裏面または表面の周縁部を洗浄することを特徴とする請求項9または請求項10に記載の基板洗浄方法。 The brush has a cylindrical small-diameter portion and a cylindrical large-diameter portion continuous to the small-diameter portion, and cleans an end surface of the substrate with a peripheral surface of the small-diameter portion, and the small-diameter portion of the large-diameter portion The substrate cleaning method according to claim 9 or 10 , wherein the peripheral portion of the back surface or the front surface of the substrate is cleaned by the connection surface. 前記ブラシは、圧縮されることにより前記接続面が変形し、その変形部分により基板の周縁部を局部的に洗浄することが可能であり、前記ブラシに対する圧縮力を変化させることにより前記変形部分の位置を変化させて洗浄することを特徴とする請求項11に記載の基板洗浄方法。 When the brush is compressed, the connecting surface is deformed, and the peripheral portion of the substrate can be locally cleaned by the deformed portion. By changing the compressive force on the brush, the deformed portion The substrate cleaning method according to claim 11 , wherein cleaning is performed by changing a position. 前記ブラシは円筒状をなし、その外周面で基板の端面を洗浄することを特徴とする請求項9または請求項10に記載の基板洗浄方法。 The substrate cleaning method according to claim 9, wherein the brush has a cylindrical shape, and an end surface of the substrate is cleaned by an outer peripheral surface thereof. 前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる圧縮力を付与し、前記基板の端面および周縁部の全体を洗浄した後、連続的にまたは段階的に前記ブラシの圧縮力を上昇させて前記ブラシの硬度を増加させ、前記ブラシによる基板の周縁部における洗浄部位を制御することを特徴とする請求項9から請求項13のいずれか一項に記載の基板洗浄方法。Applying a compressive force that provides a cleaning effect comparable to that when no compressive force is applied to the brush, or after applying a compressive force, and cleaning the entire end face and peripheral edge of the substrate continuously or in stages 14. The method according to claim 9, further comprising: increasing the compressive force of the brush to increase the hardness of the brush, and controlling a cleaning site in a peripheral portion of the substrate by the brush. The substrate cleaning method as described. 前記ブラシの圧縮力を上昇させて洗浄を行った後、前記ブラシの圧縮力を低下させ、前記ブラシに圧縮力を付与しない、又は圧縮力を付与しない時と同程度の洗浄効果が得られる圧縮力を付与し、前記基板の端面および周縁部の全体を洗浄することを特徴とする請求項9から請求項14のいずれか一項に記載の基板洗浄方法。After performing cleaning by increasing the compressive force of the brush, the compressive force of the brush is decreased and the compressive force is not applied to the brush, or a compressive effect that is equivalent to that when no compressive force is applied is obtained. The substrate cleaning method according to any one of claims 9 to 14, wherein a force is applied to clean the entire end surface and peripheral edge of the substrate. コンピュータ上で動作し、基板洗浄装置を制御するプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項9から請求項15のいずれか一項に記載の基板洗浄方法が行われるようにコンピュータに前記基板洗浄装置を制御させることを特徴とする記憶媒体。 A storage medium that operates on a computer and stores a program for controlling a substrate cleaning apparatus, wherein the program is executed by the substrate cleaning method according to any one of claims 9 to 15. A storage medium that causes a computer to control the substrate cleaning apparatus .
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