JP4957163B2 - Composite parts - Google Patents

Composite parts Download PDF

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JP4957163B2
JP4957163B2 JP2006276199A JP2006276199A JP4957163B2 JP 4957163 B2 JP4957163 B2 JP 4957163B2 JP 2006276199 A JP2006276199 A JP 2006276199A JP 2006276199 A JP2006276199 A JP 2006276199A JP 4957163 B2 JP4957163 B2 JP 4957163B2
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substrate
frame
piece
main surface
composite
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JP2008098273A (en
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健 天竺桂
範夫 酒井
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19106Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

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Description

本発明は複合部品に関し、詳しくは、平板状基体に枠状基体を接合してなる複合部品に関する。   The present invention relates to a composite part, and more particularly to a composite part formed by joining a frame-like base to a flat base.

高密度に電子部品を実装するため、平板状基体の両面又は片面にチップ状電子部品を搭載した複合部品が提供されている。   In order to mount electronic components at high density, composite components are provided in which chip-shaped electronic components are mounted on both sides or one side of a flat substrate.

例えば図17(a)の分解斜視図及び図17(b)の断面図に示すように、平板状基体1の一方主面に枠状基体2を取り付けてなる複合部品が提案されている。平板状基体1の一方主面には、枠状基体2の内側に電子部品3を搭載し、枠状基体2の内側に封止材4を充填して、封止材4で電子部品3を封止する。枠状基体2には出力端子5を設け、電子部品3と電気的に接続する。出力端子5は、枠状基体2を貫通するスルーホール(貫通穴)の内周にめっきを施し、スルーホールを半分に切断してめっきを露出させることにより形成する。あるいは、めっきされたスルーホール内にはんだを充填し、バンプ状に突出させてもよい。   For example, as shown in an exploded perspective view of FIG. 17A and a cross-sectional view of FIG. 17B, a composite part in which a frame-like base 2 is attached to one main surface of a flat base 1 has been proposed. On one main surface of the flat substrate 1, the electronic component 3 is mounted inside the frame-shaped substrate 2, the sealing material 4 is filled inside the frame-shaped substrate 2, and the electronic component 3 is filled with the sealing material 4. Seal. An output terminal 5 is provided on the frame-shaped substrate 2 and is electrically connected to the electronic component 3. The output terminal 5 is formed by plating the inner periphery of a through hole (through hole) that penetrates the frame-shaped substrate 2 and cutting the through hole in half to expose the plating. Alternatively, the plated through hole may be filled with solder and protruded in a bump shape.

この複合部品は、枠状基体2に設けた出力端子5を回路基板(たとえば、マザー基板)に接続し、回路基板に実装する。平板状基体1は、電子部品3が搭載された側と反対側の面にも、他の電子部品6を搭載することができる。(例えば、特許文献1〜4参照)
特開平6−216314号公報 特開平7−50357号公報 特開2000−101348号公報 特開2001−339137号公報
In this composite component, the output terminal 5 provided on the frame-shaped base 2 is connected to a circuit board (for example, a mother board) and mounted on the circuit board. The flat substrate 1 can be mounted with another electronic component 6 on the surface opposite to the side where the electronic component 3 is mounted. (For example, see Patent Documents 1 to 4)
JP-A-6-216314 Japanese Patent Laid-Open No. 7-50357 JP 2000-101348 A JP 2001-339137 A

このように平板状基体と枠状基体とが結合してなる複合部品を回路基板に接合する場合、例えばプリント配線板のパッド部に、複合部品の枠状基体のスルーホール内周のめっき部をはんだもしくは導電ペーストにて接合する際に、プリント配線板と複合部品の熱膨張係数αの差の影響で、大きく反った状態で接合されることがある。   Thus, when joining a composite part formed by combining a flat substrate and a frame substrate to a circuit board, for example, a plated portion on the inner periphery of the through hole of the frame substrate of the composite component is formed on the pad portion of the printed wiring board. When joining with solder or conductive paste, joining may occur in a largely warped state due to the influence of the difference in thermal expansion coefficient α between the printed wiring board and the composite part.

また、低背化のために、プリント配線板や複合部品を薄肉化すると、剛性が低下するため、さらに反りが大きくなる。したがって、製品の低背化が困難である。   Further, if the printed wiring board or the composite part is thinned for the purpose of reducing the height, the rigidity is lowered and the warpage is further increased. Therefore, it is difficult to reduce the product height.

また、ヒートサイクルの信頼性においても、回路基板、例えばプリント配線板のパッド部に、複合部品の枠状基体内のスルーホール内周のめっき部をはんだもしくは導電ペーストにて接合する際に、プリント配線板と複合部品との熱膨張係数αの差の影響で、プリント配線板と複合部品との接合部等に応力がかかり、クラックや破断が生じ、電気的信号の導通不良及び接続不良の原因となることがある。   In addition, in terms of heat cycle reliability, a printed circuit board, for example, a printed wiring board pad part, is printed with a solder or a conductive paste when the plated part on the inner periphery of the through hole in the frame-shaped substrate of the composite part is joined. Due to the effect of the difference in coefficient of thermal expansion α between the wiring board and the composite part, stress is applied to the joint between the printed wiring board and the composite part, causing cracks and breaks, causing electrical signal conduction failure and connection failure. It may become.

さらには、携帯機器用の複合部品では、落下時の衝撃応力に対する接合信頼性の向上が要求される。   Furthermore, in composite parts for portable devices, it is required to improve the bonding reliability against impact stress when dropped.

本発明は、かかる実情に鑑み、簡単な構成で、回路基板に接合された状態で生じる反りを緩和することができ、接合信頼性を向上することができる複合部品を提供しようとするものである。   In view of such a situation, the present invention is intended to provide a composite component that can reduce warpage generated in a state of being bonded to a circuit board with a simple configuration and can improve bonding reliability. .

本発明は、上記課題を解決するために、以下のように構成した複合部品を提供する。   In order to solve the above problems, the present invention provides a composite part configured as follows.

複合部品は、(1)複数の表面電極が配置された主面を有する平板状基体と、(2)複数の第1表面電極が配置された第1主面と、複数の第2表面電極が配置された第2主面とを有する枠状基体とを備える。前記複合部品は、前記平板状基体の前記主面に配置された複数の前記表面電極と前記枠状基体の前記第1主面に配置された前記第1表面電極とを介して、前記平板状基体と前記枠状基体とが貼り合わされてなる。前記枠状基体は、中間片の両端にそれぞれ第1片と第2片とが連続している接続部材と、金型内に前記接続部材となる部分を挿入した状態で成形された樹脂である枠部材とを有する。前記第1表面電極及び前記第2表面電極は、前記接続部材の前記第1片及び前記第2片により形成され、樹脂製の前記枠部材から露出している。前記枠状基体の前記枠部材には、前記第2表面電極の間において前記第2主面に連通するスリットが形成されている。 The composite part includes (1) a flat substrate having a main surface on which a plurality of surface electrodes are arranged, (2) a first main surface on which a plurality of first surface electrodes are arranged, and a plurality of second surface electrodes. And a frame-like substrate having a second main surface arranged. The composite part is formed in the flat plate shape via a plurality of the surface electrodes arranged on the main surface of the flat substrate and the first surface electrode arranged on the first main surface of the frame-shaped substrate. The base body and the frame-shaped base body are bonded together. The frame-shaped substrate is a resin molded in a state where a connecting member in which a first piece and a second piece are continuous at both ends of an intermediate piece and a portion to be the connecting member are inserted into a mold. And a frame member. The first surface electrode and the second surface electrode are formed by the first piece and the second piece of the connection member, and are exposed from the frame member made of resin. The frame member of the frame-shaped substrate is formed with a slit communicating with the second main surface between the second surface electrodes.

上記構成によれば、スリットが形成されることにより、枠状基体は変形しやすくなる。そのため、回路基板に接合された状態で生じる反りを、枠状基体の変形によって緩和することができる。また、複合部品が回路基板に接合された状態で熱応力や衝撃応力が作用しても、枠状基体の変形によって緩和することができるので、接合信頼性が向上する。   According to the said structure, a frame-shaped base | substrate becomes easy to deform | transform by forming a slit. Therefore, the warp that occurs in the state of being bonded to the circuit board can be mitigated by the deformation of the frame-shaped substrate. Further, even if thermal stress or impact stress is applied in a state where the composite component is bonded to the circuit board, it can be mitigated by deformation of the frame-like substrate, so that the bonding reliability is improved.

また、枠状基体の製造工程を簡素化でき、製造コストを低減することができ、接続部材や枠部材の材質選択の自由度が高まる。Moreover, the manufacturing process of the frame-shaped substrate can be simplified, the manufacturing cost can be reduced, and the degree of freedom in selecting the material for the connection member and the frame member is increased.

樹脂製の枠部材には、容易にスリットを形成することができる。また、セラミック等と比べると、樹脂製の枠部材は変形しやすいため、複合部品が接合された状態で生じる反りの緩和や、接合信頼性の向上の効果が高い。   A slit can be easily formed in the resin frame member. In addition, since the resin frame member is easily deformed compared to ceramic or the like, the effect of alleviating warpage occurring in a state where the composite part is joined and the effect of improving the joining reliability are high.

好ましくは、前記枠状基体の前記枠部材は、金属薄板の打ち抜き加工及び折り曲げ加工により前記第1表面電極と前記第2表面電極とが形成されている。 Preferably, the frame member of the frame-like substrate, that has a first surface electrode and the second surface electrode is formed by punching and bending a thin metal plate.

この場合、接続部材の弾性変形によって熱応力や衝撃応力を吸収し、接合信頼性を向上することができる In this case, thermal stress and impact stress can be absorbed by the elastic deformation of the connecting member, and the joining reliability can be improved .

好ましくは、前記接続部材は可撓性を有している。   Preferably, the connection member has flexibility.

この場合、枠部材の変形に追随して接続部材がたわむことにより、あるいは接続部材が単独でたわむことにより、第1表面電極と第2表面電極との相対的な角度や距離が変わる。そのため、接合信頼性が低下することなく、反りを緩和することができる。   In this case, the relative angle or distance between the first surface electrode and the second surface electrode changes when the connecting member bends following the deformation of the frame member or when the connecting member bends alone. Therefore, warpage can be alleviated without lowering the bonding reliability.

好ましくは、前記枠状基体の前記第2表面電極は、前記複合部品を回路基板に接続するための端子電極である。   Preferably, the second surface electrode of the frame-shaped substrate is a terminal electrode for connecting the composite component to a circuit board.

この場合、複合部品と回路基板との間の接合部分に作用する応力を緩和し、接合信頼性を向上することができる。   In this case, the stress acting on the joint portion between the composite component and the circuit board can be relaxed, and the joint reliability can be improved.

好ましくは、前記平板状基体は、複数のセラミック層を積層してなるセラミック多層基板である。   Preferably, the flat substrate is a ceramic multilayer substrate formed by laminating a plurality of ceramic layers.

セラミック多層基板は、内部に電気回路を構成することにより実装密度を高めることができるので、複合部品に好適である。セラミック多層基板は、アルミナ基板などと比べると脆いが、枠体にスリットを形成することにより、熱応力や衝撃応力を緩和し、基板の破壊を防止することができる。   The ceramic multilayer substrate is suitable for composite parts because the mounting density can be increased by forming an electric circuit therein. The ceramic multilayer substrate is more fragile than an alumina substrate or the like, but by forming a slit in the frame, it is possible to relieve thermal stress and impact stress and prevent the substrate from being broken.

本発明の複合部品は、枠状基体にスリットを形成するという簡単な構成によって、回路基板に接合された状態で生じる複合部品の反りを緩和することができ、接合信頼性を向上することができる。   The composite component of the present invention can alleviate the warpage of the composite component that occurs in a state of being bonded to the circuit board by a simple configuration in which a slit is formed in the frame-shaped substrate, and can improve the bonding reliability. .

以下、本発明の実施の形態として実施例について、図1〜図16を参照しながら説明する。   Hereinafter, examples of the present invention will be described with reference to FIGS.

<基本構成> まず、各実施例に共通する複合部品10の構成について、図16を参照しながら説明する。   <Basic Configuration> First, the configuration of the composite component 10 common to each embodiment will be described with reference to FIG.

図16(a)の断面図及び図16(b)の要部拡大断面図に示すように、複合部品10は、平板状の基板12の一方主面12bに枠体20が接合されている。   As shown in the cross-sectional view of FIG. 16A and the enlarged cross-sectional view of the main part of FIG. 16B, in the composite component 10, the frame body 20 is bonded to the one main surface 12b of the flat substrate 12.

基板12の一方主面12bには、ICチップ等のチップ状電子部品52が搭載され、チップ状電子部品52の端子と基板12の一方主面12bに設けられたパッド17とがボンディングワイヤー53によって接続されている。なお、基板12の一方主面12bには、ワイヤーボンディング以外で接続するチップ状電子部品、例えば表面実装型部品(SMD)を搭載してもよい。   A chip-like electronic component 52 such as an IC chip is mounted on one main surface 12 b of the substrate 12, and a terminal of the chip-like electronic component 52 and a pad 17 provided on the one main surface 12 b of the substrate 12 are connected by a bonding wire 53. It is connected. Note that a chip-like electronic component, such as a surface-mounted component (SMD), to be connected by other than wire bonding may be mounted on the one main surface 12b of the substrate 12.

基板12の他方主面12aには、必要に応じて、チップコンデンサやICチップ等のチップ状電子部品40,42が搭載され、はんだリフローやフリップチップボンディングによって、チップ状電子部品40,42の端子と基板12の他方主面12aに設けられた端子18とが接続される。   Chip-like electronic components 40 and 42 such as chip capacitors and IC chips are mounted on the other main surface 12a of the substrate 12 as necessary, and terminals of the chip-like electronic components 40 and 42 are obtained by solder reflow or flip-chip bonding. And a terminal 18 provided on the other main surface 12a of the substrate 12 are connected.

基板12は、高密度化のために、片面又は両面に電子部品を実装可能な構造であればよい。基板12は、例えば、複数のセラミック層が積層されたセラミック多層基板である。セラミック多層基板は、面内導体パターン14やビアホール導体13を形成して内部に電気回路を構成することにより実装密度を高めることができるので、複合部品10の基板12として好ましい。もっとも、基板12はセラミック多層基板に限らず、1層のみのセラミック基板であっても、セラミック以外の材料を用いた基板(例えば、プリント配線基板、フレキシブルプリント配線基板、アルミナ基板など)であってもよい。   The board | substrate 12 should just be a structure which can mount an electronic component in single side | surface or both surfaces for density increase. The substrate 12 is, for example, a ceramic multilayer substrate in which a plurality of ceramic layers are stacked. The ceramic multilayer substrate is preferable as the substrate 12 of the composite component 10 because the mounting density can be increased by forming the in-plane conductor pattern 14 and the via-hole conductor 13 to configure the electric circuit therein. However, the substrate 12 is not limited to a ceramic multilayer substrate, and may be a substrate using a material other than ceramic (for example, a printed wiring board, a flexible printed wiring board, an alumina substrate, etc.) even if it is a ceramic substrate having only one layer. Also good.

枠体20は、絶縁材料(例えば、樹脂)からなる枠部材22に、複数の接続部材30が配置されている。   In the frame 20, a plurality of connection members 30 are arranged on a frame member 22 made of an insulating material (for example, resin).

枠部材22は、中央に貫通穴23を有し、矩形の基板12の一方主面12bの周縁部に沿って枠状に延在する。枠部材22の貫通穴23によって、凹部(キャビティー)が形成され、この凹部の底面となる基板12の一方主面12bに、前述したチップ状電子部品52とパッド17とが配置されている。凹部(キャビティー)には封止材58が充填され、封止材58によって、チップ状電子部品52やボンディングワイヤー53が封止されている。   The frame member 22 has a through hole 23 in the center, and extends in a frame shape along the peripheral edge portion of the one main surface 12 b of the rectangular substrate 12. A concave portion (cavity) is formed by the through hole 23 of the frame member 22, and the above-described chip-shaped electronic component 52 and the pad 17 are arranged on the one main surface 12 b of the substrate 12 which becomes the bottom surface of the concave portion. The recess (cavity) is filled with a sealing material 58, and the chip-shaped electronic component 52 and the bonding wire 53 are sealed by the sealing material 58.

各接続部材30は、枠部材22の貫通穴23を介して互いに対向するように、枠部材22の4辺に配置されている。各接続部材30は、帯状の金属薄板を直角に折り曲げて2つの屈曲部33,35が形成された断面略コ字状の部材であり、中間片34の両端にそれぞれ第1片32と第2片36とが連続している。中間片34は、枠部材22の内部を貫通している。第1片32は、枠部材22の基板12に対向する第1主面22aに沿って延在する表面電極である。第2片36は、枠部材22の基板12とは反対側の第2主面22bに沿って延在し、外部に露出する表面電極である。第1片32と第2片36とは、接続部材30が枠部材22の貫通穴23を介して対向する方向に延在している。   The connection members 30 are arranged on the four sides of the frame member 22 so as to face each other through the through holes 23 of the frame member 22. Each connecting member 30 is a member having a substantially U-shaped cross section in which two bent portions 33 and 35 are formed by bending a belt-shaped metal thin plate at a right angle, and a first piece 32 and a second piece are respectively formed at both ends of the intermediate piece 34. The piece 36 is continuous. The intermediate piece 34 penetrates the inside of the frame member 22. The first piece 32 is a surface electrode that extends along the first main surface 22 a facing the substrate 12 of the frame member 22. The second piece 36 is a surface electrode that extends along the second main surface 22 b on the opposite side of the frame member 22 from the substrate 12 and is exposed to the outside. The first piece 32 and the second piece 36 extend in a direction in which the connection member 30 is opposed to each other through the through hole 23 of the frame member 22.

接続部材30の第1片32と第2片36の同じ側の端部、すなわち枠部材22の貫通穴23側の端部は、それぞれ、中間片34の両端に連続している。つまり、第1片32と第2片36とは、それぞれの先端31,37が外側を向くように配置され、中間片34が内側に配置されている。   The end portions on the same side of the first piece 32 and the second piece 36 of the connection member 30, that is, the end portions on the through hole 23 side of the frame member 22 are respectively continuous with both ends of the intermediate piece 34. That is, the first piece 32 and the second piece 36 are arranged so that the respective tips 31 and 37 face the outside, and the intermediate piece 34 is arranged on the inside.

第1片32と第2片36とは、長さが異なる。すなわち、第2片36の先端37は枠部材22の外周面24に達していないが、第1片32の先端31は、枠部材22の外周面24に達している。   The first piece 32 and the second piece 36 have different lengths. That is, the tip 37 of the second piece 36 does not reach the outer peripheral surface 24 of the frame member 22, but the tip 31 of the first piece 32 reaches the outer peripheral surface 24 of the frame member 22.

接続部材30の第1片32は、基板12の一方主面12bに設けられた端子16に、はんだ19で接合される。これによって、枠体20は、第1片32、はんだ19、端子16を介して、基板12の一方主面12b側に接合される。   The first piece 32 of the connection member 30 is joined to the terminal 16 provided on the one main surface 12 b of the substrate 12 by the solder 19. Thereby, the frame body 20 is joined to the one main surface 12 b side of the substrate 12 through the first piece 32, the solder 19, and the terminal 16.

図16(b)の要部拡大断面図に示すように、枠部材22の基板12とは反対側の面22aに露出している接続部材30の第2片36は、マザー基板等の回路基板60の接合用ランド等の表面電極62に、はんだ66や導電性ペースト等を介して接合される。これによって、基板12の一方主面12bに設けられた端子16は、はんだ19、接続部材30、はんだ66を介して、回路基板60の表面電極62と電気的に接続される。   16B, the second piece 36 of the connection member 30 exposed on the surface 22a opposite to the substrate 12 of the frame member 22 is a circuit substrate such as a mother substrate. It is joined to a surface electrode 62 such as 60 joining lands via solder 66 or conductive paste. As a result, the terminal 16 provided on the one main surface 12 b of the substrate 12 is electrically connected to the surface electrode 62 of the circuit substrate 60 through the solder 19, the connection member 30, and the solder 66.

接続部材30に用いる金属薄板の厚みは、50μm〜300μmが好ましい。   The thickness of the metal thin plate used for the connecting member 30 is preferably 50 μm to 300 μm.

接続部材30に用いる金属薄板の厚みが50μm未満では、折り曲げ加工時のばらつきが大きくなり、第1片32や第2片36の位置や高さのばらつきが大きくなってしまう。第1片32や第2片36の位置や高さのばらつきが大きくなると、枠体20と基板12との位置合わせ精度が低下する。   If the thickness of the metal thin plate used for the connection member 30 is less than 50 μm, the variation during bending becomes large, and the variation in the position and height of the first piece 32 and the second piece 36 becomes large. When the variation in the position and height of the first piece 32 and the second piece 36 increases, the alignment accuracy between the frame 20 and the substrate 12 decreases.

枠体20と基板12とを確実に接合するために、第1片32の位置ずれ分の余裕を見込んで、第1片32と接合する基板12の端子16を大きくすると、基板12の小型化、ひいては複合部品10の小型化を損ねる。   In order to reliably bond the frame 20 and the substrate 12, the size of the substrate 12 can be reduced by enlarging the terminal 16 of the substrate 12 to be bonded to the first piece 32 in consideration of a margin for the positional deviation of the first piece 32. As a result, downsizing of the composite part 10 is impaired.

第1片32や第2片36の高さがばらつくと、例えば、基板12と枠体20との間や、枠体20と回路基板60との間のはんだの厚みがばらつき、接合信頼性が損なわれる。高さのばらつき分を見込んで高さ寸法の余裕を大きくすると、複合部品10の低背化を阻害する。   If the height of the first piece 32 or the second piece 36 varies, for example, the solder thickness varies between the substrate 12 and the frame body 20 or between the frame body 20 and the circuit board 60, resulting in improved bonding reliability. Damaged. Increasing the height dimension allowance for the height variation inhibits the reduction of the height of the composite component 10.

さらに、熱応力や衝撃応力により、接続部材30の屈曲部33,35付近は繰り返し疲労を受けるが、厚みが小さいと疲労破壊しやすいため、接合信頼性を損ねる。   Further, the vicinity of the bent portions 33 and 35 of the connection member 30 is repeatedly subjected to fatigue due to thermal stress and impact stress. However, if the thickness is small, the fatigue reliability is liable to be deteriorated, so that the joint reliability is impaired.

接続部材30に用いる金属薄板の厚みが300μmを越えると、折り曲げ加工が難しくなり、曲げ角度のばらつき、高さのばらつきが大きくなる。また、打ち抜きや折り曲げの間隔を小さくし、第1片32、中間片34、第2片36の長さ(第1片32、中間片34、第2片36が連続する方向の寸法)や幅(第1片32、中間片34、第2片36が連続する方向に直角方向の寸法)を小さくすることができないため、複合部品10の小型化、低背化を阻害する。   When the thickness of the metal thin plate used for the connecting member 30 exceeds 300 μm, the bending process becomes difficult, and the variation in bending angle and the variation in height become large. Further, the interval between the punching and bending is reduced, and the length (the dimension in the direction in which the first piece 32, the intermediate piece 34, and the second piece 36 are continuous) and the width of the first piece 32, the intermediate piece 34, and the second piece 36. Since (the dimension in a direction perpendicular to the direction in which the first piece 32, the intermediate piece 34, and the second piece 36 are continuous) cannot be reduced, the composite component 10 is prevented from being reduced in size and height.

接続部材30には、基板12や回路基板60との接合に使用されるはんだや導電性接着剤との濡れ性をよくし、接合強度を高めるため、Ni/Sn、Ni/Au、Ni/はんだなどをめっきしてもよい。このようなめっきは、接続部材30の全面に施しても、第1片32や第2片36の接合面のみに施してもよい。   The connection member 30 is made of Ni / Sn, Ni / Au, Ni / solder in order to improve wettability with solder and conductive adhesive used for bonding to the substrate 12 and the circuit board 60 and to increase bonding strength. Etc. may be plated. Such plating may be performed on the entire surface of the connection member 30 or only on the bonding surface of the first piece 32 and the second piece 36.

金属薄板を塑性加工で折り曲げて形成された接続部材30は、それ自体が容易にX、Y、Zの3方向に弾性変形する。接続部材30は可撓性を有するので、枠部材22の変形に追随することができる。   The connection member 30 formed by bending a thin metal plate by plastic working is easily elastically deformed in three directions of X, Y, and Z. Since the connecting member 30 has flexibility, it can follow the deformation of the frame member 22.

<実施例1> 実施例1について、図1〜図11を参照しながら説明する。   <Example 1> Example 1 will be described with reference to FIGS.

図1(a)の斜視図に示すように、枠体20は、基板12とは反対側の第2主面22bに、斜線を付した接続部材30の第2片36が露出する。枠体20の枠部材22には、スリット26が形成されている。スリット26は、露出している接続部材30の第2片36の間において、基板12とは反対側の第2主面22bに連通している。スリット26は、枠部材22の外周面24と内周面25との間を貫通するが、枠部材22の基板12側の第1主面22aには達していない有底溝である。   As shown in the perspective view of FIG. 1A, in the frame body 20, the second piece 36 of the connecting member 30 that is hatched is exposed on the second main surface 22b opposite to the substrate 12. A slit 26 is formed in the frame member 22 of the frame body 20. The slit 26 communicates with the second main surface 22 b on the opposite side of the substrate 12 between the exposed second pieces 36 of the connection member 30. The slit 26 is a bottomed groove that penetrates between the outer peripheral surface 24 and the inner peripheral surface 25 of the frame member 22 but does not reach the first main surface 22a of the frame member 22 on the substrate 12 side.

スリット26が図1(a)のように全部の接続部材30の第2片36の間に形成されていることは、必須ではない。例えば図1(b)の斜視図に示すように、スリット26が一部の接続部材30の第2片36の間にのみ形成されていてもよい。この場合、枠体20aが全方向に変形しやすいように、枠部材22の各辺に少なくとも1本のスリット26が形成されていることが好ましい。   It is not essential that the slits 26 are formed between the second pieces 36 of all the connecting members 30 as shown in FIG. For example, as shown in the perspective view of FIG. 1B, the slit 26 may be formed only between the second pieces 36 of some of the connection members 30. In this case, it is preferable that at least one slit 26 is formed on each side of the frame member 22 so that the frame body 20a is easily deformed in all directions.

図3の側面図に示すように、複合部品10aの枠体20は、スリット26が基板12とは反対側に配置されるように、基板12に接合される。   As shown in the side view of FIG. 3, the frame body 20 of the composite component 10 a is joined to the substrate 12 such that the slit 26 is disposed on the side opposite to the substrate 12.

枠部材22に、枠部材22の外周面24と内周面25との間を貫通するスリット26を設けると、スリット26から封止材58が流れ出る。これを防止するため、図2の断面図に示すように、基板12に接合された枠体20の内側には、枠体20の内周面25に沿って予めダム59を形成しておき、ダム59の内側に封止材58を充填する。ダム59は、チクソ性の高い、濡れ広がり性のないエポキシ系樹脂を塗布することにより形成する。   When the slit 26 penetrating between the outer peripheral surface 24 and the inner peripheral surface 25 of the frame member 22 is provided in the frame member 22, the sealing material 58 flows out from the slit 26. In order to prevent this, as shown in the cross-sectional view of FIG. 2, a dam 59 is formed in advance along the inner peripheral surface 25 of the frame 20 inside the frame 20 joined to the substrate 12. The sealing material 58 is filled inside the dam 59. The dam 59 is formed by applying an epoxy resin that has high thixotropy and does not wet and spread.

図4の断面図に示す複合部品10bのように、基板12の一方主面12b側の枠体20の内側にワイヤーボンド実装がない場合、即ち、表面実装部品50、ICやFET等のAuもしくは半田バンプによるフリップチップ実装部品54,56のみを搭載する場合には、フリップチップ実装においてアンダーフィル樹脂55の充填の有無にかかわらず、封止材58のない構成とすることができる。   As in the composite part 10b shown in the cross-sectional view of FIG. 4, when there is no wire bond mounting inside the frame 20 on the one main surface 12b side of the substrate 12, that is, the surface mounting part 50, Au such as IC or FET, When only the flip chip mounting parts 54 and 56 by solder bumps are mounted, the structure without the sealing material 58 can be obtained regardless of whether or not the underfill resin 55 is filled in the flip chip mounting.

図2、4に示したように、基板12の他方主面12aには、チップ状電子部品40,42や、Auもしくは半田バンプによるフリップチップ実装される電子部品44が搭載される。基板12の他方主面12aには、必要に応じて、金属ケース46が接合される。これは複合部品10a,10bをマザー基板等の回路基板に実装する際、マウンターが吸着し易いようにするためと、特に高周波用に用いられる場合の電磁シールドのためである。   As shown in FIGS. 2 and 4, chip-like electronic components 40 and 42 and electronic components 44 that are flip-chip mounted by Au or solder bumps are mounted on the other main surface 12 a of the substrate 12. A metal case 46 is bonded to the other main surface 12a of the substrate 12 as necessary. This is for making the mounter easy to adsorb when mounting the composite parts 10a, 10b on a circuit board such as a mother board, and for electromagnetic shielding especially when used for high frequency.

磁気シールドが不要な場合は、図5の断面図に示す複合部品10cのように、基板12の他方主面12aに、実装部品40,42,44を被覆するようにエポキシ樹脂48等の熱硬化性樹脂を塗布したり、トランスファー成形し、天面49を平らにする。   When the magnetic shield is not required, as in the composite component 10c shown in the cross-sectional view of FIG. 5, the other main surface 12a of the substrate 12 is thermoset such as the epoxy resin 48 so as to cover the mounting components 40, 42, and 44. An adhesive resin is applied or transfer molding is performed to flatten the top surface 49.

図6の断面図に示すように、複合部品10aは、マザー基板等の回路基板60に接合され、基板12の両面12a,12bに実装された部品40,42,44,50,52及び金属ケース46が、回路基板60に電気的に接続される。   As shown in the cross-sectional view of FIG. 6, the composite component 10a is joined to a circuit board 60 such as a mother board and mounted on both surfaces 12a and 12b of the board 12, and the metal case 40, 42, 44, 50, 52 and the metal case. 46 is electrically connected to the circuit board 60.

次に、複合部品10aの作製工程について、図7〜図11を参照しながら説明する。   Next, the manufacturing process of the composite component 10a will be described with reference to FIGS.

まず、基板12と枠体20とを準備する。   First, the substrate 12 and the frame body 20 are prepared.

基板12は、セラミック多層基板の場合、例えば複数のセラミック層を積層してなる。図16(a)の断面図に示すように、内部には、Ag、Ag/Pd、Ag/Pt、Cu、CuOなどを主成分とする導電性ペーストを用いて面内導体パターン14やビアホール導体13が形成されている。このような構成は、低抵抗のAgやCuを使うので、信号損失が小さく、高周波用の部品あるいはモジュールとして実用化されている。基板12の一方主面12bには、端子16やパッド17が形成され、他方主面12aには接合電極(接合用ランド)となる端子18が形成されている。端子16,18やパッド17には、必要に応じて、Ni/Sn、Ni/Au、Ni/Pd/Au、Ni/はんだをめっきする。   In the case of a ceramic multilayer substrate, the substrate 12 is formed by stacking a plurality of ceramic layers, for example. As shown in the cross-sectional view of FIG. 16 (a), the in-plane conductor pattern 14 and via-hole conductor are formed inside using a conductive paste mainly composed of Ag, Ag / Pd, Ag / Pt, Cu, CuO, or the like. 13 is formed. Since such a configuration uses Ag or Cu having low resistance, the signal loss is small and it is put into practical use as a high-frequency component or module. A terminal 16 and a pad 17 are formed on one main surface 12b of the substrate 12, and a terminal 18 serving as a bonding electrode (bonding land) is formed on the other main surface 12a. The terminals 16 and 18 and the pad 17 are plated with Ni / Sn, Ni / Au, Ni / Pd / Au, or Ni / solder as necessary.

具体的には、面内導体パターン14やビアホール導体パターン13となる部分が形成された厚さ10〜200μm程度の未焼成セラミックグリーンシートと、セラミックグリーンシートの焼成温度よりも高温で焼結する拘束層とを準備する。未焼成セラミックグリーンシートは低温焼結セラミックス材料を含み、焼結温度は1050℃以下である。低温焼結セラミック材料としては、具体的には、アルミナやフォルステライト等のセラミック粉末にホウ珪酸系ガラスを混合してなるガラス複合系LTCC(Low Temperature Co-fired Ceramic)材料、ZnO−MgO−Al−SiO系の結晶化ガラスを用いた結晶化ガラス系LTCC材料、BaO−Al−SiO系セラミック粉末やAl−CaO−SiO−MgO−B系セラミック粉末等を用いた非ガラス系LTCC材料等、が挙げられる。また、拘束層はアルミナを含む材料からなっている。次いで、未焼成セラミックグリーンシートと拘束層とを適宜な順序で積層して、複数枚の未焼成セラミックグリーンシートを積層した積層体の両主面に拘束層が積層された複合積層体を形成する。次いで、この複合積層体を、セラミックグリーンシートの焼結温度で焼成した後、焼結していない拘束層を除去して、未焼成セラミックグリーンシートが焼結して形成された基板12を取り出す。 Specifically, an unfired ceramic green sheet having a thickness of about 10 to 200 μm in which portions to be the in-plane conductor pattern 14 and the via-hole conductor pattern 13 are formed, and a constraint of sintering at a temperature higher than the firing temperature of the ceramic green sheet Prepare with layers. The green ceramic green sheet includes a low-temperature sintered ceramic material, and the sintering temperature is 1050 ° C. or lower. Specific examples of the low-temperature sintered ceramic material include a glass composite LTCC (Low Temperature Co-fired Ceramic) material obtained by mixing borosilicate glass with ceramic powder such as alumina or forsterite, ZnO-MgO-Al. Crystallized glass-based LTCC material using 2 O 3 —SiO 2 -based crystallized glass, BaO—Al 2 O 3 —SiO 2 -based ceramic powder and Al 2 O 3 —CaO—SiO 2 —MgO—B 2 O 3 Non-glass type LTCC material using a ceramic ceramic powder or the like. The constraining layer is made of a material containing alumina. Next, the unfired ceramic green sheet and the constraining layer are laminated in an appropriate order to form a composite laminate in which constraining layers are laminated on both main surfaces of a laminate in which a plurality of unfired ceramic green sheets are laminated. . Next, after firing this composite laminate at the sintering temperature of the ceramic green sheet, the unsintered constraining layer is removed, and the substrate 12 formed by sintering the unfired ceramic green sheet is taken out.

枠体20は、金属薄板の打ち抜きと折り曲げ加工により形成された接続部材30を、樹脂モールド成型で枠部材22に埋め込むことにより、作製する。   The frame body 20 is produced by embedding the connecting member 30 formed by punching and bending a metal thin plate in the frame member 22 by resin molding.

すなわち、図7の平面図に示すように、青銅、洋白、Ni合金などの金属薄板を金型で打ち抜いて、枠部72の内側に、先端76が互いに対向する複数の帯状部74を有する板部材70を形成する。   That is, as shown in the plan view of FIG. 7, a metal thin plate such as bronze, white, or Ni alloy is punched out with a mold, and a plurality of strip-like portions 74 whose tips 76 face each other are provided inside the frame portion 72. A plate member 70 is formed.

次いで、図8の要部斜視図に示すように、対向する帯状部74の先端76側を直角に2回折り曲げ、実線で示した接続部材30となる部分を、枠部72に接続された状態のまま形成する。   Next, as shown in the perspective view of the main part in FIG. 8, the tip 76 side of the opposed band-like part 74 is bent twice at a right angle, and the part that becomes the connection member 30 indicated by the solid line is connected to the frame part 72. Form as it is.

次いで、図9に示すように、接続部材30となる部分に樹脂をモールドし、枠部材22を形成する。このとき、接続部材30の第1片32となる部分と第2片36となる部分とが金型の内面に沿い、中間片34となる部分が金型の内面から離れるようにして、LCP(液晶ポリマー)、PPS(ポリフェニレンサルファイド)等の熱可塑性樹脂の射出成形、あるいは、エポキシ系樹脂などの熱硬化性樹脂のトランスファー成形により、樹脂成形する。   Next, as shown in FIG. 9, a resin is molded into a portion to be the connection member 30 to form a frame member 22. At this time, the portion to be the first piece 32 and the portion to be the second piece 36 of the connecting member 30 are along the inner surface of the mold, and the portion to be the intermediate piece 34 is separated from the inner surface of the mold so that the LCP ( Resin molding is performed by injection molding of a thermoplastic resin such as liquid crystal polymer) or PPS (polyphenylene sulfide), or by transfer molding of a thermosetting resin such as an epoxy resin.

好ましくは、樹脂成形の際にスリット26も同時に形成する。この場合、切削等により枠部材22にスリット26を形成する後工程が不要となる。   Preferably, the slit 26 is formed at the same time as the resin molding. In this case, a post-process for forming the slit 26 in the frame member 22 by cutting or the like becomes unnecessary.

図10の断面図に示すように、成形した樹脂(すなわち、枠部材22)からはみ出した帯状部74の枠部72側の部分を、枠部材22の外周面24に沿って切り離す。これにより、第1片32の先端31は、枠部材22の外周面24に達している。   As shown in the cross-sectional view of FIG. 10, the part on the frame part 72 side of the belt-like part 74 that protrudes from the molded resin (that is, the frame member 22) is cut along the outer peripheral surface 24 of the frame member 22. Thereby, the tip 31 of the first piece 32 reaches the outer peripheral surface 24 of the frame member 22.

次に、図11の断面図に示すように、基板12と枠部材22とを接合し、部品を搭載する。   Next, as shown in the cross-sectional view of FIG. 11, the substrate 12 and the frame member 22 are joined and components are mounted.

すなわち、図11(a)に示すように、基板12の一方主面12bの端子16,18(図16(a)参照)に、はんだ、Ag等を含む導電性ペーストを印刷し、枠体20や表面実装部品50を搭載し、枠体20の接続部材30の第1片32や表面実装部品50の表面電極が導電性ペーストに当接した状態で、導電性ペーストを熱硬化させ、導電性ペーストが固化したはんだにより、基板12に枠体20や表面実装部品50を接合する。なお、枠体20と表面実装型部品50とは、基板12に同時に接合せず、任意の順序で接合してもよい。   That is, as shown in FIG. 11A, a conductive paste containing solder, Ag or the like is printed on the terminals 16 and 18 (see FIG. 16A) of the one main surface 12b of the substrate 12, and the frame 20 In addition, the conductive paste is thermally cured in a state where the surface mount component 50 is mounted and the first piece 32 of the connection member 30 of the frame 20 and the surface electrode of the surface mount component 50 are in contact with the conductive paste. The frame body 20 and the surface mount component 50 are joined to the substrate 12 by the solder solidified by the paste. Note that the frame 20 and the surface-mounted component 50 may be joined in any order without being joined to the substrate 12 at the same time.

基板12と枠体20との接合後、洗浄を行って、基板12の一方主面12bに設けたパッド17(図16(a)参照)の汚れを除去する。   After joining the substrate 12 and the frame body 20, cleaning is performed to remove dirt on the pad 17 (see FIG. 16A) provided on the one main surface 12 b of the substrate 12.

次いで、図11(b)に示すように、枠体20の貫通穴23から、基板12の一方主面12bに、IC、FETなどのチップ状電子部品52を、エポキシ系樹脂又は導電性樹脂等で搭載し、チップ状電子部品50の端子と、基板12の一方主面12bに設けたパッド17(図16(a)参照)との間を、Au、Al、Cuなどのボンディングワイヤー53によって接続する。パッド17(図16(a)参照)は、接合強度を上げるべく、通常、Ni/AuもしくはNi/Pd/Auめっきが施されている。   Next, as shown in FIG. 11 (b), a chip-like electronic component 52 such as an IC or FET is attached to the one main surface 12b of the substrate 12 from the through-hole 23 of the frame 20, epoxy resin or conductive resin, or the like. And connected between the terminal of the chip-shaped electronic component 50 and the pad 17 (see FIG. 16A) provided on the one main surface 12b of the substrate 12 by a bonding wire 53 such as Au, Al, or Cu. To do. The pad 17 (see FIG. 16A) is usually plated with Ni / Au or Ni / Pd / Au in order to increase the bonding strength.

次いで、図11(c)に示すように、枠体20の内周面25に沿って、チクソ性の高い、濡れ広がり性のないエポキシ系樹脂を塗布して、ダム59を形成する。   Next, as shown in FIG. 11C, along the inner peripheral surface 25 of the frame body 20, an epoxy resin having a high thixotropy and a non-wetting property is applied to form a dam 59.

次いで、図11(d)に示すように、ダム59の内側に、チクソ性の低いエポキシ系樹脂の封止材58を充填して熱硬化し、チップ状電子部品50やボンディングワイヤー53、パッド17を封止材58で覆い、封止する。   Next, as shown in FIG. 11 (d), the inside of the dam 59 is filled with an epoxy resin sealing material 58 having low thixotropy and thermally cured, so that the chip-shaped electronic component 50, the bonding wire 53, and the pad 17 are filled. Is covered with a sealing material 58 and sealed.

なお、ダム59や封止材58の高さは、枠体20を超えないようにする。複合部品10を回路基板60(図16参照)に接合するときに、ダム59や封止材58が回路基板60(図16参照)に干渉しないようにするためである。   Note that the height of the dam 59 and the sealing material 58 does not exceed the frame body 20. This is to prevent the dam 59 and the sealing material 58 from interfering with the circuit board 60 (see FIG. 16) when the composite component 10 is joined to the circuit board 60 (see FIG. 16).

封止材58が硬化したら、図11(e)に示すように上下を反転し、基板12の他方主面12aの端子18(図16(a)参照)に、はんだ、Ag等を含む導電性ペーストを印刷し、チップコンデンサ等のチップ状電子部品40,42を搭載して、リフローもしくは熱硬化して、あるいはICチップ等のチップ状電子部品44をはんだボールを介してフリップチップボンディングして、チップ状電子部品40,42,44の端子と基板12の他方主面12aの端子とを接合する。必要に応じて、フリップチップボンディングしたチップ状電子部品44と基板12の他方主面12aとの間に、エポキシ系樹脂からなるアンダーフィル樹脂45を充填し、熱硬化する。   When the sealing material 58 is cured, it is turned upside down as shown in FIG. 11 (e), and the terminal 18 (see FIG. 16 (a)) on the other main surface 12a of the substrate 12 contains conductive material such as solder and Ag. Printing paste, mounting chip-like electronic components 40 and 42 such as chip capacitors, reflowing or thermosetting, or flip-chip bonding chip-like electronic components 44 such as IC chips via solder balls, The terminals of the chip-shaped electronic components 40, 42, and 44 are joined to the terminals of the other main surface 12a of the substrate 12. If necessary, an underfill resin 45 made of an epoxy resin is filled between the chip-shaped electronic component 44 that has been flip-chip bonded and the other main surface 12a of the substrate 12, and is thermally cured.

金属ケース46を用いる場合には、図11(f)に示すように、チップ状電子部品40,42,44の接合後に、洋白、りん青銅等からなる金属ケース46を、基板12の他方主面12a上又は側面に搭載し、接合する。金属ケース46の接合は、チップ状電子部品40,42,44の搭載工程と同時に行なわれてもよい。 When the metal case 46 is used, as shown in FIG. 11 (f), after joining the chip-like electronic components 40, 42, 44, the metal case 46 made of white or phosphor bronze is used as the other main substrate 12. It is mounted on the surface 12a or the side surface and joined. Bonding of the metal case 46 includes a tower mounting step of electronic chip components 40, 42 and 44 may be performed simultaneously.

以上により、複合部品10aが完成する。   Thus, the composite part 10a is completed.

複合部品10a,10b,10cの枠体20,22aにスリットを形成することで、枠体の変形が容易となる。これにより、回路基板に複合部品を搭載するためのはんだ接合等の際に、熱膨張係数αの差の影響で生じるそりを、枠体の変形により抑えることができる。また、剛性の低い薄肉化した回路基板に複合部品を接合することができ、複合部品と回路基板とを接合した製品の低背化が可能である。   By forming slits in the frame bodies 20 and 22a of the composite parts 10a, 10b, and 10c, the frame body can be easily deformed. As a result, it is possible to suppress warpage caused by the influence of the difference in thermal expansion coefficient α by deformation of the frame body at the time of soldering or the like for mounting the composite component on the circuit board. In addition, the composite component can be bonded to a thin circuit board having low rigidity, and the height of a product in which the composite component and the circuit board are bonded can be reduced.

さらに、落下衝撃時に枠体が変形することにより、衝撃応力を吸収できるので、複合部品内における接続部材と基板との接合信頼性や、複合部品と回路基板との接合信頼性を向上することができる。特に、基板が、アルミナ基板などと比べて曲げ強度が低く、ガラス等を含み脆いセラミック多層基板の場合、熱応力や衝撃応力の緩和により、基板の破壊を防止する効果が大きい。   Furthermore, since the frame can be deformed at the time of a drop impact, the impact stress can be absorbed, so that it is possible to improve the bonding reliability between the connecting member and the board in the composite part and the bonding reliability between the composite part and the circuit board. it can. In particular, in the case where the substrate has a lower bending strength than an alumina substrate or the like, and is a brittle ceramic multilayer substrate including glass or the like, the effect of preventing the substrate from being destroyed by relaxing thermal stress and impact stress is great.

ヒートサイクルの信頼性においても、回路基板と複合部品との熱膨張係数αの差による熱応力を、枠体の変形にて吸収でき、はんだ等の接合部のクラックや破断と電気的信号の導通不良及び接続不良を抑制することができる。   In terms of heat cycle reliability, the thermal stress due to the difference in coefficient of thermal expansion α between the circuit board and the composite part can be absorbed by deformation of the frame body, and cracks and breaks in joints such as solder and electrical signal conduction Defects and connection defects can be suppressed.

複合部品の枠体の枠部材内に配置された接続部材は、塑性変形するよう折り曲げられた連続した金属端子であるので、X、Y、Z方向いずれにも弾性変形する。また、枠部材を構成する樹脂と金属端子である接続部材とは基本的に接合しておらず、接続部材は、樹脂成形後もX、Y、Z方向に自由に弾性変形する。したがって、接続部材は、枠部材の変形にも追随することができる。そのため、枠体を基板に接合する際や、複合部品をマザーボード等の回路基板に実装する際のリフロー、その後のヒートサイクル時の熱による各部の熱膨張係数αの差による熱応力を吸収でき、接合信頼性が高い。また、落下衝撃時の衝撃応力に対する接合信頼性も高い。   Since the connecting member disposed in the frame member of the frame of the composite part is a continuous metal terminal bent so as to be plastically deformed, it is elastically deformed in any of the X, Y, and Z directions. In addition, the resin constituting the frame member and the connection member that is a metal terminal are not basically joined, and the connection member is elastically deformed freely in the X, Y, and Z directions even after resin molding. Therefore, the connection member can follow the deformation of the frame member. Therefore, when joining the frame body to the substrate, reflow when mounting the composite component on a circuit board such as a mother board, it can absorb the thermal stress due to the difference in thermal expansion coefficient α of each part due to the heat during the heat cycle, High bonding reliability. In addition, the bonding reliability against impact stress at the time of drop impact is high.

複合部品の枠体は、金属薄板を成形、折り曲げ加工し、それを被覆するように樹脂成形するので、工程が簡素化でき、製造コストを低減することができる。   Since the frame of the composite part is formed, bent, and resin-molded so as to cover the thin metal plate, the process can be simplified and the manufacturing cost can be reduced.

複合部品の基板と回路基板とは、基本的に折り曲げられた金属端子である接続部材で接合されている。つまり、金属の弾性変形で応力吸収し、強度向上させている。よって、接続部材の材質選定の自由度は高い。   The substrate of the composite component and the circuit board are bonded together by a connecting member that is basically a bent metal terminal. That is, the stress is absorbed by the elastic deformation of the metal to improve the strength. Therefore, the degree of freedom in selecting the material for the connection member is high.

また、枠体は、枠部材の成形樹脂と接続部材の金属端子とが強固に接合されている必要はない。つまり、枠部材の樹脂材質の自由度も高い。安価な材質、折り曲げ易い材質、成型し易い材質を選定でき、工業上、有用である。   Further, the frame body does not need to be firmly joined with the molding resin of the frame member and the metal terminal of the connection member. That is, the flexibility of the resin material of the frame member is high. Inexpensive materials, easy-to-bend materials, and easy-to-mold materials can be selected and are industrially useful.

枠体の内周面に沿ってチクソ性の高い、濡れ広がり性の低いエポキシ系樹脂を塗布しダムを形成することにより、その内側にチクソ性の低いエポキシ系樹脂の封止材を充填することができる。ダムが封止材の枠からの漏れを防止するので、枠部材のスリットに封止材が入り込んで枠部材の変形を妨げることがない。   Apply epoxy resin with high thixotropy and low wettability along the inner peripheral surface of the frame to form a dam, and fill the inside with an epoxy resin sealant with low thixotropy Can do. Since the dam prevents the sealing material from leaking from the frame, the sealing material does not enter the slit of the frame member to prevent the deformation of the frame member.

<実施例2> 実施例2について、図12を参照しながら説明する。   <Example 2> Example 2 will be described with reference to FIG.

実施例2では、枠体を複数に分割する以外は、実施例1と同じ構成である。すなわち、図12(a)の斜視図に示すように、第2主面22bに露出する斜線を付した第2片36の間にスリット26が形成された2組のL字状の部材20p,20qに分割された枠体を矩形に配置した状態で、不図示の基板に接合する。あるいは、図12(b)の斜視図に示すように、第2主面22bに露出する斜線を付した第2片36の間にスリット26が形成された2対のI字状の部材20s,20tに分割された枠体を矩形に配置した状態で、不図示の基板に接合する。なお、いずれの場合も、隣接する部材20p,20q;20s,20tの間に隙間28p,28qを設け、隣接する部材20p,20q;20s,20t間で変形が影響を及ぼし合わないようにすることが好ましい。   The second embodiment has the same configuration as the first embodiment except that the frame is divided into a plurality of parts. That is, as shown in the perspective view of FIG. 12 (a), two sets of L-shaped members 20p, each having a slit 26 formed between the second pieces 36 hatched and exposed on the second main surface 22b, In a state where the frame divided into 20q is arranged in a rectangular shape, it is bonded to a substrate (not shown). Alternatively, as shown in the perspective view of FIG. 12 (b), two pairs of I-shaped members 20s, each having a slit 26 formed between the second pieces 36 with hatching exposed on the second main surface 22b, In a state where the frame divided into 20t is arranged in a rectangular shape, it is bonded to a substrate (not shown). In any case, gaps 28p, 28q are provided between adjacent members 20p, 20q; 20s, 20t so that deformation does not affect between adjacent members 20p, 20q; 20s, 20t. Is preferred.

実施例2では、実施例1と同様の効果に加え、複数に分割し分離して枠形状にすることにより、熱膨張係数αの差の影響で生じるそりを、より効果的に抑制できる。   In the second embodiment, in addition to the same effects as those of the first embodiment, warping caused by the difference in the thermal expansion coefficient α can be more effectively suppressed by dividing into a plurality of pieces and separating them into a frame shape.

<実施例3> 実施例3について、図13を参照しながら説明する。   <Example 3> Example 3 will be described with reference to FIG.

図13の斜視図に示すように、枠体20bには、第2主面22b側に形成されたスリット26に加え、第1主面22a側にもスリット27を形成する。これにより、枠体20bがより変形しやすくなり、特に、たわみ変形しやくなる。   As shown in the perspective view of FIG. 13, in the frame body 20b, in addition to the slit 26 formed on the second main surface 22b side, a slit 27 is also formed on the first main surface 22a side. Thereby, the frame body 20b becomes easier to deform, and in particular, it becomes easier to bend and deform.

<実施例4> 実施例4について、図14を参照しながら説明する。   <Example 4> Example 4 will be described with reference to FIG.

図14の斜視図に示すように、枠体20cの内周面25に沿ってスリット28が形成される。   As shown in the perspective view of FIG. 14, a slit 28 is formed along the inner peripheral surface 25 of the frame 20c.

実施例1では、図1に示したように、枠体20の外周面24と内周面25との間を貫通するスリット26が形成されているため、図2に示したように、封止材58が流れ出ないようにダムを形成する必要がある。これに対し、実施例4では、スリット28が枠体20cの貫通穴23側と外部とを連通しないので、実施例1のようなダム59(図2参照)が不要となる。   In the first embodiment, as shown in FIG. 1, the slit 26 penetrating between the outer peripheral surface 24 and the inner peripheral surface 25 of the frame 20 is formed. It is necessary to form a dam so that the material 58 does not flow out. On the other hand, in the fourth embodiment, the slit 28 does not communicate with the through hole 23 side of the frame 20c and the outside, so that the dam 59 (see FIG. 2) as in the first embodiment is not necessary.

<実施例5> 実施例5について、図15を参照しながら説明する。   <Example 5> Example 5 will be described with reference to FIG.

実施例5では、枠体20xが樹脂モールド成型体でない。枠部材22xには樹脂基板を用い、打ち抜き加工により貫通穴23xを形成し、ダイサーでスリット26xを形成し、レーザー等により貫通穴22vを形成する。第1主面22の表面電極32xや第2主面22mの表面電極36xは、めっきや金属膜の転写によって形成する。表面電極32x,36xは、貫通穴22vに導電材34xを充填したビアホール導体を介して、あるいは貫通穴22vの内周面をめっきすることにより形成したスルーホール導体を介して、電気的に接続される。   In Example 5, the frame 20x is not a resin molded body. A resin substrate is used for the frame member 22x, a through hole 23x is formed by punching, a slit 26x is formed by a dicer, and a through hole 22v is formed by a laser or the like. The surface electrode 32x on the first main surface 22 and the surface electrode 36x on the second main surface 22m are formed by plating or transfer of a metal film. The surface electrodes 32x and 36x are electrically connected through a via-hole conductor in which the through-hole 22v is filled with the conductive material 34x or through a through-hole conductor formed by plating the inner peripheral surface of the through-hole 22v. The

<まとめ> 以上に説明したように、枠体の基板とは反対側の第2主面に設けられた表面電極の間にスリットを形成するという簡単な構成で、回路基板に接合された状態で生じる反りを緩和することができる。また、複合部品と回路基板との間の接合部分に作用する熱応力や衝撃応力を緩和することができ、複合部品と回路基板との間の接合信頼性を向上することができる。   <Summary> As described above, with a simple configuration in which a slit is formed between the surface electrodes provided on the second main surface opposite to the substrate of the frame, in a state of being bonded to the circuit board. The warping that occurs can be mitigated. Further, thermal stress and impact stress acting on the joint portion between the composite component and the circuit board can be relaxed, and the joint reliability between the composite component and the circuit board can be improved.

なお、本発明は、上記した実施の形態に限定されるものではなく、種々変更を加えて実施可能である。   The present invention is not limited to the above-described embodiment, and can be implemented with various modifications.

例えば、接続部材の形状は任意であり、屈曲部を直角に折り曲げる代わりに、アールが付いた形状としてもよい。また、中間片をく字状に折り曲げてもよい。あるいは、第1片と第2片との間を中間片で斜めに接続し、接続部材を断面Z字状に形成してもよい。   For example, the shape of the connecting member is arbitrary, and instead of bending the bent portion at a right angle, a shape with a rounded shape may be used. Further, the intermediate piece may be bent into a square shape. Alternatively, the first piece and the second piece may be obliquely connected with an intermediate piece, and the connecting member may be formed in a Z-shaped cross section.

また、複合部品の基板(すなわち、平板状基体)は、枠体(すなわち、枠状基体)に接続される複数の端子が同一平面上に設けられた基板であればよく、枠体が接続される平面部以外の部分に、凸部や凹部が設けられていてもよい。   In addition, the substrate of the composite component (that is, the flat substrate) may be a substrate in which a plurality of terminals connected to the frame (that is, the frame substrate) are provided on the same plane, and the frame is connected to the substrate. A convex portion or a concave portion may be provided in a portion other than the flat portion.

枠体の斜視図図である。(実施例1)It is a perspective view of a frame. Example 1 複合部品の断面図である。(実施例1)It is sectional drawing of a composite component. Example 1 複合部品の側面図である。(実施例)It is a side view of a composite part. (Example) 封止材のない複合部品を示す断面図である。(実施例1)It is sectional drawing which shows the composite component without a sealing material. Example 1 金属ケースのない複合部品を示す断面図である。(実施例1)It is sectional drawing which shows the composite component without a metal case. Example 1 複合部品が搭載された状態を示す断面図である。(実施例1)It is sectional drawing which shows the state in which the composite component was mounted. Example 1 板部材の平面図である。(実施例1)It is a top view of a plate member. Example 1 板部材の折り曲げ状態を示す斜視図である。(実施例1)It is a perspective view which shows the bending state of a board member. Example 1 樹脂モールド成型時の状態を示す透視図である。(実施例1)It is a perspective view which shows the state at the time of resin mold molding. Example 1 枠体の断面図である。(実施例1)It is sectional drawing of a frame. Example 1 複合部品の作製工程を示す断面図である。(実施例1)It is sectional drawing which shows the manufacturing process of composite components. Example 1 枠体の斜視図図である。(実施例2)It is a perspective view of a frame. (Example 2) 枠体の斜視図図である。(実施例3)It is a perspective view of a frame. (Example 3) 枠体の斜視図図である。(実施例4)It is a perspective view of a frame. Example 4 枠体の一部断面斜視図図である。(実施例5)It is a partial cross section perspective view of a frame. (Example 5) 複合部品の(a)断面図、(b)要部拡大断面図である。(実施例1〜5)It is (a) sectional drawing of a composite component, (b) It is a principal part expanded sectional view. (Examples 1-5) 複合部品の(a)分解斜視図、(b)断面図である。(従来例)It is (a) disassembled perspective view of composite component, (b) sectional drawing. (Conventional example)

符号の説明Explanation of symbols

10 複合部品
12 基板(平板状基体)
12a 他方主面
12b 一方主面
16 端子(表面電極)
20 枠体(枠状基体)
22 枠部材
22a 面(第1主面)
22b 面(第2主面)
23 貫通穴
30 接続部材
32 第1片(第1表面電極)
34 中間片
36 第2片(第2表面電極)
10 Composite parts 12 Substrate (flat substrate)
12a Other main surface 12b One main surface 16 Terminal (surface electrode)
20 frame (frame-shaped substrate)
22 frame member 22a surface (first main surface)
22b surface (second main surface)
23 Through hole 30 Connection member 32 First piece (first surface electrode)
34 Intermediate piece 36 Second piece (second surface electrode)

Claims (5)

複数の表面電極が配置された主面を有する平板状基体と、
複数の第1表面電極が配置された第1主面と、複数の第2表面電極が配置された第2主面とを有する枠状基体とを備え、
前記平板状基体の前記主面に配置された複数の前記表面電極と前記枠状基体の前記第1主面に配置された前記第1表面電極とを介して、前記平板状基体と前記枠状基体とが貼り合わされてなる複合部品であって、
前記枠状基体は、
中間片の両端にそれぞれ第1片と第2片とが連続している接続部材と、
金型内に前記接続部材となる部分を挿入した状態で成形された樹脂である枠部材と、
を有し、
前記第1表面電極及び前記第2表面電極は、前記接続部材の前記第1片及び前記第2片により形成され、樹脂製の前記枠部材から露出しており、
前記枠状基体の前記枠部材には、前記第2表面電極の間において前記第2主面に連通するスリットが形成されていることを特徴とする、複合部品。
A flat substrate having a main surface on which a plurality of surface electrodes are disposed;
A frame-shaped substrate having a first main surface on which a plurality of first surface electrodes are arranged and a second main surface on which a plurality of second surface electrodes are arranged;
The flat substrate and the frame shape through the plurality of surface electrodes arranged on the main surface of the flat substrate and the first surface electrode arranged on the first main surface of the frame substrate. It is a composite part that is bonded to a substrate,
The frame-shaped substrate is
A connecting member in which the first piece and the second piece are respectively continuous at both ends of the intermediate piece;
A frame member that is a resin molded in a state where the portion to be the connection member is inserted into the mold
Have
The first surface electrode and the second surface electrode are formed by the first piece and the second piece of the connection member, and are exposed from the frame member made of resin,
A composite part , wherein a slit communicating with the second main surface is formed between the second surface electrodes in the frame member of the frame-shaped base.
前記枠状基体の前記枠部材は、金属薄板の打ち抜き加工及び折り曲げ加工により前記第1表面電極と前記第2表面電極とが形成されていることを特徴とする、請求項1に記載の複合部品。 The frame member of the frame-like substrate, characterized by the Turkey have said second surface electrode and the first surface electrode is formed by punching and bending a metal sheet, the composite of claim 1 parts. 前記接続部材は可撓性を有していることを特徴とする、請求項に記載の複合部品。 The composite part according to claim 2 , wherein the connection member has flexibility. 前記枠状基体の前記第2表面電極は、前記複合部品を回路基板に接続するための端子電極であることを特徴とする、請求項1〜のいずれか一項に記載の複合部品。 The composite part according to any one of claims 1 to 3 , wherein the second surface electrode of the frame-shaped base is a terminal electrode for connecting the composite part to a circuit board. 前記平板状基体は、複数のセラミック層を積層してなるセラミック多層基板であることを特徴とする、請求項1〜のいずれか一項に記載の複合部品。 The flat base body is characterized in that a ceramic multilayer substrate formed by laminating a plurality of ceramic layers, the composite component according to any one of claims 1-3.
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