JP4954492B2 - Probe and manufacturing method thereof - Google Patents

Description

  The present invention relates to a probe and a manufacturing method thereof, and, for example, relates to a probe used when performing an electrical characteristic inspection of a semiconductor wafer and a manufacturing method thereof.

  For example, in order to inspect the electrical characteristics of IC chips such as memory circuits and logic circuits formed in large numbers on a semiconductor wafer, as a contactor, for example, it is described in Japanese Patent Application Laid-Open No. 2000-055936 (Patent Document 1). Probe card is used. This probe card plays a role of relaying inspection signals between a tester, which is a test apparatus, and an IC chip when contacting with an electrode pad of a wafer during inspection.

  This probe card has a plurality of probe needles corresponding to a plurality of electrode pads formed on an IC chip, for example, and inspects the IC chip by electrically contacting each probe needle and each electrode pad. I am doing so. The probe needle includes a cantilever including a top portion that contacts the electrode pad and an elastic member.

  FIG. 10 is a view showing a manufacturing process of the probe needle, and FIG. 11 is an external perspective view of the probe needle formed by the manufacturing process of FIG. A conventional probe needle will be described with reference to FIGS. 10 and 11.

  After the silicon oxide film 2 is formed on the surface of the silicon substrate 1 shown in FIG. 10A as shown in FIG. 10B, a resist film 3 is formed on the surface. After exposure through a photomask (not shown), the resist film 3 is developed to form a square opening groove 4 in the resist film 3. After removing the silicon oxide film 2 in the portion of the opening groove 4, the silicon substrate 1 is subjected to anisotropic wet etching to form an inverted square frustum-shaped groove 5 as shown in FIG. As shown in FIG. 10D, the resist film 3 and the silicon oxide film 2 are removed.

  Further, as shown in FIG. 10E, a titanium film 6 serving as a seed for plating is formed on the entire surface of the silicon substrate 1. Next, a sacrificial layer 7 shown in FIG. 10F is formed by a photolithography technique except for a portion corresponding to the cantilever 8 and a portion corresponding to the groove 5, and as shown in FIG. 10G, the sacrificial layer 7 is formed. Except for the portion, the portion corresponding to the cantilever 8 and the groove 5 are deposited by plating, for example, nickel alloy, and the sacrificial layer 7 is removed as shown in FIG. A truncated pyramid 9 and a cantilever 8 are formed.

In the probe formed in the manufacturing process shown in FIGS. 10A to 10H, the cantilever 8 portion has a rectangular parallelepiped shape as shown in FIG. 11, the length L is 200 to 500 μm, and the width W is 60 to 150 μm. The thickness T is 10 to 20 μm, the apex of the inverted quadrangular pyramid 9 has a height H of 50 to 100 μm, and the width Wt of the flat portion at the tip is about 10 ± 2 μm.
JP 2000-055936 A

  Recently, the degree of integration of IC chips has increased, and the number of electrode pads has increased and the arrangement pitch of electrode pads has become increasingly narrower. For this reason, unless the probe needle is also reduced in width, it comes into contact with an adjacent electrode pad, and is no longer compatible with the pitch of the electrode pad. However, if the width of the inverted quadrangular truncated pyramid 9 that is the top of the probe needle shown in FIG. 11 is reduced, the height thereof is lowered.

  That is, in the inverted square frustum 9, as shown in FIG. 10C, the groove 5 is formed by anisotropic wet etching. Therefore, if the diameter of the groove 5 is reduced, the depth of the groove 5 becomes shallower. Therefore, when the depth of the groove 5 is increased, the diameter must be increased, the diameter of the top portion is increased, and the pitch of the electrode pads cannot be accommodated. .

  Thus, when the height of the inverted quadrangular pyramid 9 is low, problems such as the cantilever 8 coming into contact with the electrode pad or other elements, or the inverted quadrangular pyramid 9 being unable to properly contact the electrode pad occur. . Further, if the inverted square frustum 9 is low, the cantilever 8 may bend and come into contact with the electrode pad.

  As described above, in the manufacturing method based on the photo process shown in FIG. 10, even if the width of the inverted quadrangular pyramid 9 serving as the contact is attempted to be reduced, the thickness of the cantilever 8 cannot be reduced.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a probe that can reliably contact electrode pads arranged at a narrow pitch by maintaining the strength and reducing the contact, and a method for manufacturing the probe.

The present invention includes a support portion extending in a predetermined direction, a column portion having a predetermined thickness, extending from the support portion in a direction intersecting the direction in which the support portion extends, and a direction in which the column portion extends from the tip of the column portion. And a contact having a thickness reduced from the thickness of the column portion and having a tip displaced from the center of the cross section of the column portion .

Accordingly, the contact can reliably contact the electrode pads arranged at a narrow pitch, and the thickness of the contact can be reduced from the thickness of the beam portion by a simple manufacturing method.

  In one embodiment, the contact is formed in a plate shape having a substantially uniform thickness, and in another embodiment, the contact has a shape in which the thickness gradually decreases toward the tip. In any of the embodiments, since the tip of the contact can be made thin, it is possible to reliably contact the electrode pads arranged at a narrow pitch.

  More preferably, the contact has a pointed tip. By making the tip sharp, it is easy to make contact with the electrode pad.

  In one embodiment, the contact has an outer surface that is flush with the outer surface of the beam portion. In another embodiment, the contact is formed independently of the beam portion. One surface is in close contact with one surface of the beam.

Another aspect of the present invention is a method for manufacturing a probe, which includes a support portion that extends in a predetermined direction, and a column portion that extends from the support portion in a direction that intersects the direction in which the support portion extends, and is substantially uniform. forming a beam portion that have a thickness such, the tip of the pillar portion, projecting in the direction of extension of the pillar portion has a smaller thickness than the pillar portion, the tip is displaced from the cross-sectional center of the pillar portion Forming a contact in position .

By this method, the probe can be manufactured by integrating the beam portion and the contact. In this manufacturing method, the beam portion may be formed first, or the contact may be formed first, and both of them are included. Preferably, the step of forming the contact should be a contact at the tip. Forming a first metal layer extending long with a substantially uniform thickness with a shape portion, wherein the step of forming the beam portion includes a step of overlapping the first metal layer except for a tip portion to be a contact. Forming two metal layers. As a result, the contact made of the first metal layer and the beam portion made of the second metal layer can be manufactured integrally. Also in this case, the beam portion may be formed first, or the contact may be formed first.

  In one embodiment, the first metal layer is a metal film grown in the thickness direction on the substrate, and the step of forming the beam portion is a state in which a tip portion of the metal film to be a contact is covered with a masking material. In another embodiment, the step of forming the contact includes forming a plate-like contact that is thinner than the thickness of the beam portion, and the contact and the beam. Joining one end of any surface in the direction in which the portion extends. The step of forming the beam portion in another embodiment includes forming a metal film on one surface of the beam portion, and the step of forming the contact includes forming a metal film on one surface of the contact, And diffusion bonding the metal film of the contactor and the metal film of the contactor.

  Furthermore, in another embodiment, the step of forming the contact includes polishing the tip of the beam portion to form the contact so as to have an inclined surface. By polishing, a contact can be formed at the tip of the beam portion.

  In yet another embodiment, the step of forming the beam portion includes growing a metal layer with a substantially uniform thickness on the substrate including the portion to be the contact, and the step of forming the contact includes: In the state where the portion to be the beam portion is covered with the masking material, the portion to be the contact is formed by etching.

  According to the present invention, the contact having a thickness reduced from the thickness of the beam portion provided to protrude in the direction in which the beam portion extends from the tip of the beam portion having a bent planar shape extending with a predetermined thickness. Since the probe is configured by including the child, the contact can be made small while maintaining the strength, and the contact can be reliably brought into contact with the electrode pads arranged at a narrow pitch.

  FIG. 1 is an external perspective view showing a probe according to an embodiment of the present invention. The probe 10 shown in FIG. 1 is provided with a beam portion 11 having a bent planar shape that extends with a predetermined thickness, and projects from the tip of the beam portion 11 in the direction in which the beam portion 11 extends. 11 and a contactor 14 having a thickness reduced from the thickness of 11. The beam portion 11 includes a support portion 12 provided along the surface of the probe substrate (not shown) and a column portion 13 extending in a direction intersecting the support portion 12 and provided with a contact 14 at one end thereof. The portion 12 and the column portion 13 are formed in an L-shaped planar shape.

  The tip of the contactor 14 is located at a position shifted from the center of the cross section of the column part 13. The support portion 12 and the column portion 13 are both substantially uniform in thickness and are formed in a rectangular parallelepiped shape, for example, of nickel or nickel alloy having a thickness of about 70 to 80 μm. The contact 14 is formed in a thin plate shape having a substantially uniform thickness so that the thickness thereof is smaller than that of the support portion 12 and the column portion 13, and the thickness is, for example, about 10 to 20 μm of nickel or a nickel alloy. The tip is sharpened.

  In this way, the contactor 14 is formed thin, and the tip is sharpened and provided at the tip of the column part 13 so that the strength is maintained even if the electrode pads are formed on the substrate at very narrow intervals. However, the contact 14 can be appropriately brought into electrical contact with a desired electrode pad without contacting an adjacent electrode pad.

  Further, if the electrode pads are arranged on the substrate at intervals slightly wider than the thickness of the contact 14, it is possible to increase the integration degree of the IC chip to such an extent that it does not hinder the inspection of the electrical characteristics of the semiconductor device. become.

  Note that, by reducing the thickness of the contact 14, it is easy to bend in the Y direction shown in FIG. 1, but the strength in the X direction can be maintained.

  FIG. 2 is a perspective view showing a modification of the probe shown in FIG. The probe 10a shown in FIG. 2 is provided with a column portion 13 extending perpendicularly from the middle of the longitudinal direction of the support portion 15 to form a beam portion 16 in a T-shaped bent planar shape. The contact 14 is formed on the surface. In this example, the strength of the beam portion 16 can be maintained as compared with the L-shaped probe 10 shown in FIG.

  3, 4 and 5 are diagrams for explaining a method of manufacturing a probe according to an embodiment of the present invention. In particular, FIG. 3 shows a manufacturing process, and (A), (C), (E ), (G), (I) are plan views, and (B), (D), (F), (H), (J) are (A), (C), (E), (G). , (I) is a cross-sectional view taken along line B1-B1, D1-D1, F1-F1, H1-H1, J1-J1. FIG. 4 is a perspective view showing a groove formed by the process shown in FIGS. 3A and 3B, and FIG. 5 is an external view of the probe formed by the manufacturing process shown in FIGS. 3I and 3J. It is a perspective view.

  As shown in FIGS. 3A and 3B, a titanium film 22 serving as a seed for plating is formed on the entire surface of the silicon substrate 21. Next, a sacrificial layer 24 is formed by removing the groove 23 corresponding to the L-shaped planar shape of the probe 10 shown in FIG. The formed groove 23 and sacrificial layer 24 are shown in FIG.

  In FIG. 4, the groove 23 includes a first groove 26 corresponding to the beam portion 11 shown in FIG. 1 and a second groove 27 corresponding to the contact 14. On the titanium film 22 on the silicon substrate 21 which is the bottom surface of the groove 23, nickel or a nickel alloy is grown in the thickness direction by plating on the portion corresponding to the support portion 12, the column portion 13 and the contact 14 shown in FIG. Then, as shown in FIGS. 3C and 3D, a plating layer 31 as a first metal layer is formed. Next, as shown in FIGS. 3E and 3F, a portion corresponding to the contact 14 in the groove 23 is covered with a resin 25 which is a masking material. As a method of covering the portion corresponding to the contact 14 in this way, for example, there is a method of spotting the resin 25 with a dropoid.

  As shown in FIGS. 3G and 3H, the first plating layer 31 is deposited by plating nickel or a nickel alloy and is thicker than the first plating layer 31 as an upper layer. Two plating layers 32 are formed. At this time, since the growth covered with the resin 25 is inhibited, only the first plating layer 31 is formed in the portion corresponding to the contact 14. As shown in FIGS. 3I and 3J, when the resin 25 is removed and the first and second plated layers 31 and 32 are taken out from the silicon substrate 21 and the sacrificial layer 24, as shown in FIG. The first and second plating layers 31 and 32 can generate the probe 10b in which the support portion 12, the column portion 13, and the contactor 14 are integrated.

  In the above description, in order to form a stack of two layers having different lengths, a short layer is formed on a long layer. Conversely, a long layer is formed on a short layer. May be.

  In the above description, the support portion 12, the column portion 13, and the contact 14 are formed by the first and second plating layers 31 and 32, but are formed by stacking metals by other methods. May be.

  Furthermore, when the probe 10a shown in FIG. 2 is generated, the groove 23 shown in FIG. 4 may be formed in a T shape in accordance with the overall planar shape of the probe 10a.

  FIG. 6 is a diagram showing a method of manufacturing a probe according to another embodiment of the present invention. (A), (C), (E), (G), (I) are plan views, and (B), (D), (F), (H), (J) are the lines B2-B2, D2-D2, F2-F2, H2 of (A), (C), (E), (G), (I). It is sectional drawing which follows -H2, J2-J2.

  In the embodiment shown in FIG. 3, the probe 10b is formed by using the spotting method, whereas in this embodiment, the probe 10c is formed by using the etching method.

  As shown in FIGS. 6A and 6B, a titanium film 22 serving as a seed for plating is formed on the entire surface of the silicon substrate 21. Next, a sacrificial layer 24 is formed by removing the groove 23 corresponding to the L-shaped planar shape of the probe 10 shown in FIG. As shown in FIGS. 6C and 6D, a plated layer 34 having a predetermined thickness is formed on the titanium film 22 on the silicon substrate 21 by growing nickel or a nickel alloy in the thickness direction by plating.

  As shown in FIGS. 6E and 6F, when the insulating layer 28, which is a masking material, is masked except for the portion to be the contact 14 shown in FIG. 1, and wet etching is performed, FIG. ), (H), a cavity 29 is formed above the thin plating layer 35 to be the contact 14, and the portion not wet-etched is a thick plating layer 36 corresponding to the pillar portion 13. It becomes. As shown in FIGS. 6I and 6J, when the plating layer 34 is taken out from the silicon substrate 21 and the sacrificial layer 24, the support portion 12 and the column portion 13 are integrated by the plating layer 36, and the plating layer 35 The probe 10c in which the contact 14 is formed can be generated.

  Note that when wet etching is performed on the plating layer 34, the material may be changed between the plating layers 35 and 36 in order to stop the etching at the plating layer 35 to be the contact 14.

  FIG. 7 is a perspective view showing a method for manufacturing a probe according to another embodiment of the present invention. In the manufacturing method shown in FIG. 3 described above, the support portion 12, the column portion 13, and the contact 14 are integrally formed, whereas in this embodiment, the support that becomes the beam portion 41 having a bent planar shape is provided. The part 42 and the pillar part 43 are formed integrally, the contactor 44 is formed separately from the beam part 41, and the contactor 44 is brought into close contact with the pillar part 43.

  That is, the support portion 42 and the column portion 43 shown in FIG. 7A are formed in a substantially uniform thickness of about 70 to 80 μm, for example, as a plating layer of nickel or a nickel alloy in the same manner as the manufacturing process described in FIG. It forms so that it may have. At this time, an Au film 45 as a metal film is formed on the lower surfaces of the support portion 42 and the column portion 43.

  In the same manufacturing process, the contactor 44 is separately formed in a pentagonal plate shape with a sharp tip as a plating layer such as nickel or a nickel alloy so as to have a substantially uniform thickness of about 10 to 20 μm. . For example, an Au film 46 is formed on the upper surface of the contact 44. Then, as shown in FIG. 7B, the contactor 44 is bonded to the tip end portion of the column part 43 by metal diffusion bonding of the Au film 46 of the contactor 44 and the Au film 45 of the columnar part 43. Thus, the probe 10d can be generated. In this way, by joining the contactor 44 and one end of either surface of the beam portion 41, it is possible to reliably contact the electrode pads arranged at a narrow pitch.

  In the above description, the support portion 42, the column portion 43, and the contactor 44 are made of nickel or a nickel alloy, but may be made of another metal material. In addition, although the Au film has a feature that it is difficult to oxidize, an Au / Sn junction may be used instead of the Au / Au junction. Furthermore, cobalt 44, molybdenum, manganese, or the like may be mixed in nickel to form the support portion 42, the column portion 43, and the contact 44, and the contact 44 may be joined to the column portion 43.

  FIG. 8 is a diagram showing a probe manufacturing method according to still another embodiment of the present invention. In this embodiment, the probe 10e is formed such that the contact 54 has an inclined surface 55 that is inclined from the same surface as any surface extending in the longitudinal direction of the column portion 53 toward a surface located on the opposite side. It is a thing. That is, as shown in FIG. 8A, the support portion 52 and the column portion 53 that become the beam portion 51 are integrally formed in an L-shaped planar shape bent as a plating layer by, for example, nickel or a nickel alloy. . The front end portion of the column portion 53 is polished along the surface indicated by the alternate long and short dash line. As a result, as shown in FIG. 8B, the contact 54 having the inclined surface 55 can be formed at the tip of the column portion 53.

  In addition, as shown by the one-dot chain line in FIG.

  FIG. 9 is a perspective view showing various modifications of the probe according to the embodiment of the present invention. In the embodiment shown in FIG. 9, the contactor 64 is formed to have an outer surface that is flush with the outer surface of the beam portion 61.

  More specifically, the probe 10f in the example shown in FIG. 9A has a plate portion 63 provided at one end of the support portion 62, and the beam portion 61 is formed in an L-shaped bent planar shape, thereby forming a plate shape. The contactor 64 formed to have a sharp tip is provided on the other end side of the tip of the column part 63 so as to be flush with the surface of the column part 63 on the support part 62 side.

  The probe 10g in the example shown in FIG. 9B has one end at the tip of the column portion 63 so that the contactor 64 shown in FIG. 9A is flush with the one end surface of the support portion 62 of the column portion 63. It is provided on the side.

  By forming the contacts 64 to have an outer surface that is flush with the outer surface of the beam portion 61 in this way, the contacts 64 are made small while maintaining the strength of the contacts 64, so that the contacts 64 are arranged at a narrow pitch. The electrode pad can be reliably contacted.

  As mentioned above, although embodiment of this invention was described with reference to drawings, this invention is not limited to the thing of embodiment shown in figure. Various modifications and variations can be made to the illustrated embodiment within the same range or equivalent range as the present invention.

  The probe of the present invention can be used for a probe card having a plurality of probe needles corresponding to a plurality of electrode pads formed on an IC chip.

It is an external appearance perspective view which shows the probe of one Embodiment of this invention. It is an external appearance perspective view which shows the modification of the probe shown in FIG. It is a figure which shows the manufacturing process of the probe in one Embodiment of this invention. It is a perspective view which shows the groove | channel formed by the manufacturing process shown to FIG. 3 (A), (B). It is an external appearance perspective view of the probe formed by the manufacturing process shown to FIG. 3 (I) and (J). It is a figure which shows the manufacturing process of the probe in other embodiment of this invention. It is an external appearance perspective view which shows the manufacturing method of the probe in other embodiment of this invention. It is an external appearance perspective view which shows the manufacturing method of the probe in other embodiment of this invention. It is an external appearance perspective view which shows the various modifications of the probe in other embodiment of this invention. It is a figure which shows the manufacturing process of the conventional probe. It is an external appearance perspective view of the probe formed by the manufacturing process of FIG.

Explanation of symbols

  10, 10a to 10g Probe, 11, 16, 41, 51, 61 Beam part, 12, 15, 42, 52, 62 Support part, 13, 43, 53, 63 Column part, 14, 44, 54, 64 Contact , 55 inclined surface, 21 silicon substrate, 22 titanium film, 23 groove, 24 sacrificial layer, 25 resin, 26 first groove, 27 second groove, 28 insulating layer, 29 cavity, 31 first plating layer, 32 Second plating layer, 34, 35, 36 Plating layer, 44, 45 Au film.

Claims (14)

A support portion extending in a predetermined direction;
A pillar portion having a predetermined thickness and extending from the support portion in a direction intersecting with a direction in which the support portion extends;
Provided to protrude in a direction extending from the tip of the pillar portion of the pillar portion, have a reduced thickness than the thickness of the pillar portion, the contact at the position where the tip is displaced from the cross-sectional center of the pillar portion Comprising a probe. The probe according to claim 1 , wherein the support portion and the column portion have a substantially uniform thickness. The probe according to claim 1 , wherein the contact is formed in a plate shape having a substantially uniform thickness. The probe according to claim 1, wherein the contact has a shape that gradually decreases in thickness toward a tip. The probe according to any one of claims 1 to 4 , wherein the contact has a pointed tip. The probe according to claim 1, wherein the contact has an outer surface that is flush with an outer surface of the column portion. The probe according to any one of claims 1 to 5 , wherein the contact is formed independently of the column portion, and one surface thereof is in close contact with one surface of the column portion. A support portion extending in a predetermined direction, from said supporting portion, and a pillar portion extending in a direction crossing the extending direction of the support portion, forming a beam portion that have a substantially uniform thickness,
The tip of the pillar portion, has a smaller thickness than the pillar portion projects in the direction of extension of the pillar portion, and forming a contact in a position distal deviates from the transverse plane center of the pillar portion A method for manufacturing a probe. The step of forming the contact includes forming a first metal layer extending long at a substantially uniform thickness with a portion of the shape to be a contact at the tip,
The probe manufacturing method according to claim 8 , wherein the step of forming the beam portion includes forming a second metal layer that overlaps the first metal layer except for a tip portion to be the contact. Method. The first metal layer is a metal film grown in a thickness direction on a substrate;
The step of forming the beam portion, while covering the front end portion of the metal film to be a contact with a masking material, comprising growing an upper metal layer on the metal layer, according to claim 9 Manufacturing method of the probe. The step of forming the contact includes forming a plate-like contact thinner than the thickness of the beam portion, and joining the contact and one end of any surface in the extending direction of the beam portion. The method for producing a probe according to claim 10 . The step of forming the beam portion includes forming a metal film on one surface of the beam portion,
The step of forming the contacts is a metal film formed on one surface of the contactor comprises diffusion bonding and a metal film of the contactor with the metal film of the beam portion, according to claim 1 1 Manufacturing method of the probe. The method of manufacturing a probe according to claim 8 , wherein the step of forming the contact includes polishing the tip of the beam portion to form the contact so as to have the inclined surface. The step of forming the beam portion includes growing a metal layer with a substantially uniform thickness on a substrate including a portion to be the contact.
9. The probe according to claim 8 , wherein the step of forming the contact includes etching to form a portion to be the contact while covering a portion to be the beam portion with a masking material. Production method.

Images