JP4952000B2 - OPTICAL DEVICE, ITS MANUFACTURING METHOD, AND OPTICAL DEVICE - Google Patents

Description

  The present invention relates to an optical device in which a plurality of optical elements are accommodated in the same package, a manufacturing method thereof, and an optical device using the optical device.

  Semiconductor lasers using nitride-based III-V compound semiconductors (hereinafter also referred to as GaN-based semiconductors) typified by GaN, AlGaN mixed crystals and GaInN mixed crystals are recorded and recorded using existing optical systems. Since an oscillation wavelength of about 400 nm (for example, 405 nm), which is the limit wavelength of a reproducible optical disc, can be obtained, recording for next-generation optical discs such as Blu-ray or HD-DVD (High Definition DVD) is possible.・ Used as a light source for playback equipment.

  Many recording / reproducing apparatuses for next-generation optical discs are adapted for multi-format to meet market demands. That is, these are not only next-generation optical disks, but also existing optical disks such as DVD (Digital Versatile Disk) or CD (Compact Disk), CD-R (CD Recordable), CD-RW (CD Rewritable) or MD (Mini Disk). Can also be used for recording and playback. The same applies to DVD recording / reproducing apparatuses that are rapidly spreading at present, and most of them also support recording / reproducing of CD, CD-R, etc. before DVD.

  As a light source of such a multi-format optical disc device, a semiconductor laser that generates light in the 400 nm band and a 600 nm band (for example, 660 nm) used for DVD recording / reproduction, CD, CD-R, etc. recording / reproduction Development of a multi-wavelength laser in which a semiconductor laser that generates light in the 700 nm band (for example, 780 nm) used in the above is accommodated in one package is underway. By using a multi-wavelength laser, the number of parts of the optical system such as an objective lens and a beam splitter for recording / reproducing various optical disks can be reduced to simplify the structure of the optical system, and the optical disk apparatus can be made smaller and thinner. Cost reduction can be realized.

  Here, since both the 600 nm band semiconductor laser and the 700 nm band semiconductor laser are formed on the GaAs substrate, they can be formed in one chip (so-called monolithic). On the other hand, a sapphire, SiC, ZnO or GaN substrate is used as a substrate for a 400 nm band semiconductor laser, but a GaAs substrate cannot be used. Therefore, conventionally, a multi-wavelength laser incorporating a 400 nm band semiconductor laser includes, for example, a 400 nm band semiconductor laser 210 using a GaN substrate 211 and a 600 nm band using a GaAs substrate 221 as shown in FIG. It is a so-called hybrid type in which a 700 nm band monolithic semiconductor laser 220 is mounted on a support base 230 (see, for example, Patent Document 1).

It has also been proposed to bond two semiconductor lasers by flip-chip bonding when producing a hybrid multi-wavelength laser (see, for example, Patent Document 2).
JP 2001-230502 A Japanese Patent Laid-Open No. 11-340587

  However, in the conventional hybrid type multi-wavelength laser, the wires W1 and W2 are joined to the back surface of the GaN substrate 211 to make an electrical connection to a package (not shown), so that the size of the semiconductor laser 210 needs to be increased. was there. However, as of March 2005, the number of substrate manufacturers that can manufacture a high-quality GaN substrate is small, and the cost is high because it is technically difficult. Therefore, there is a problem that increasing the size of the semiconductor laser 210 directly increases the raw material cost.

  As shown in FIG. 16, if the stacking order of the semiconductor lasers 210 and 220 is reversed, it is possible to join wires even if the size of the semiconductor laser 210 is reduced. However, in this case, if the semiconductor laser 220 is mounted so that the GaAs substrate side faces the support base 230, the thermal conductivity of the GaAs substrate is poor, so that the heat dissipation performance is deteriorated and the life cannot be secured. If mounting is performed with the substrate side facing the semiconductor laser 210 side, the mounting process for independent driving of each wavelength band becomes difficult.

  The present invention has been made in view of such problems, and an object of the present invention is to provide an optical device, a manufacturing method thereof, and an optical device that can ensure heat dissipation performance and life and suppress raw material costs.

The optical device according to the present invention accommodates a plurality of optical elements in the same package, and has the following requirements (A) to ( F ).
(A) Support base provided in package (B) First optical element (C) disposed on a support base with a conductive adhesive layer in between and having the highest thermal conductivity among a plurality of optical elements Second optical element joined to the first optical element so that the portion projects like a bowl around the first optical element
(D) A wiring pattern layer provided on the surface of the second optical element on the first optical element side so as to correspond to each of the plurality of optical elements and to cover at least the overhanging region.
(E) A pad layer provided on the surface of the support base so as to correspond to a portion of the wiring pattern layer overhanging region.
(F) Bump connection portion provided between the portion of the wiring pattern layer over the overhang region and the pad layer

In the optical device of the present invention, since the first optical element having the highest thermal conductivity among the plurality of optical elements is disposed on the support base, the heat generated in the second optical element is the first optical element. It is quickly dissipated through the optical element. Therefore, the temperature rise of the second optical element is prevented, and the second optical element operates stably for a long time. Further, the second optical element is joined to the first optical element so that a part of the second optical element protrudes like a bowl around the first optical element, and the second optical element is on the first optical element side. On this surface, a wiring pattern layer corresponding to each of the plurality of optical elements is provided so as to cover at least the overhanging region. A bump connection portion is provided between a portion of the wiring pattern layer over the overhang region and the pad layer on the support base. Accordingly, the first optical element or the second optical element and the external power source are electrically connected via the bump connection portion. Therefore, it is possible to reduce the size of the first optical element.

An optical device manufacturing method according to the present invention manufactures an optical device in which a plurality of optical elements are accommodated in the same package, and includes the following steps (A) to ( F ).
(A) The process of forming the 1st optical element with the largest thermal conductivity among several optical elements.
(B) A step of forming a second optical element having a wiring pattern layer corresponding to each of the plurality of optical elements on the surface on the first optical element side.
(C) The second optical element is joined to the first optical element so that a part of the second optical element protrudes in a hook shape around the first optical element , and the wiring pattern layer covers at least the extended region. step of the
(D) A step of providing a bump connection portion on the wiring pattern layer in the overhang region of the second optical element.
(E) A step of forming a pad layer for bonding the bump connecting portion and a conductive adhesive layer for bonding the first optical element with the same material on the supporting base.
(F) A step of bonding the first optical element and the support substrate with the conductive adhesive layer in between, at the same time as bonding the pad layer and the portion of the wiring pattern layer extending over the bump connection portion.

  An optical apparatus according to the present invention includes the optical device according to the present invention.

  Since the optical device of the present invention is configured using the optical device of the present invention having excellent heat dissipation performance and a reduced size of the first optical element, the lifetime is ensured and the raw material cost is suppressed.

According to the optical device of the present invention, since the first optical element having the highest thermal conductivity among the plurality of optical elements is disposed on the support base, the heat dissipation performance can be improved and the life can be ensured. it can. In addition, the second optical element is joined to the first optical element so that a part of the second optical element protrudes around the first optical element . On the surface of the second optical element on the first optical element side, a wiring pattern layer corresponding to each of the plurality of optical elements is provided so as to cover at least the protruding region. A bump connection portion is provided between the portion of the wiring pattern layer over the overhang region and the pad layer on the support substrate. Thereby, the electrical connection between the first optical element or the second optical element and the external power source can be established via the bump connection portion. Therefore, the dimension of the first optical element can be reduced, and the raw material cost can be suppressed.

According to the method for manufacturing an optical device of the present invention , the second optical element is joined to the first optical element so that a part of the second optical element protrudes around the first optical element. The wiring pattern layer on the optical element is at least on the overhanging region. After the bump connection portion is provided on the wiring pattern in the overhanging region, the portion of the wiring pattern layer over the overhanging region and the pad layer on the support substrate are bonded with the bump connection portion in between. Therefore , for example, flip chip bonding can be performed on a support substrate in the form of a wafer, and productivity can be significantly increased. In addition, the pad base for bonding the bump connection portion and the conductive adhesive layer for bonding the first optical element are made of the same material on the support base, with the bump connection portion in between. At the same time when the second optical element and the supporting base are joined, the first optical element and the supporting base are joined with the conductive adhesive layer interposed therebetween, so that the electrical connection and the heat radiation path are secured. There is also a manufacturing advantage that can be achieved in the same process.

  According to the optical device of the present invention, since the optical device of the present invention is used, the heat radiation performance can be improved to ensure the lifetime, and the cost can be reduced.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[First Embodiment]
FIG. 1 shows a cross-sectional structure of a semiconductor laser device according to the first embodiment of the present invention. In this semiconductor laser device 10A, a first semiconductor laser 20 and a second semiconductor laser 30 are sequentially stacked on a support base 11 and arranged.

  The second semiconductor laser 30 is bonded to the first semiconductor laser 20 with the welding layer 40 in between so that a part of the second semiconductor laser 30 becomes an overhang region 30 </ b> A projecting around the first semiconductor laser 20. Yes. A bump connection portion 50 is provided between the overhanging region 30 </ b> A and the support base 11. Thereby, in this semiconductor laser device 10A, the first semiconductor laser 20 or the second semiconductor laser 30 can be electrically connected to the external power source via the bump connection portion 50, and the first semiconductor laser 20 It is possible to reduce the material cost by reducing the size of the material. For example, in the present embodiment, the dimensions of the first semiconductor laser 20 are reduced to a resonator length of 300 μm, a width of 200 μm, and a thickness of 80 μm. Incidentally, the dimensions of the second semiconductor laser 30 are a resonator length of 350 μm, a width of 450 μm, and a thickness of 150 μm.

  The support base 11 has a configuration in which a heat sink 11A and a submount 11B are joined with a welding layer 11C interposed therebetween. The first semiconductor laser 20 and the bump connection portion 50 are bonded to the submount 11B.

  The heat sink 11A has a function as a heat radiating member that dissipates heat generated in the first semiconductor laser 20 and the second semiconductor laser 30, and is made of a metal such as copper (Cu). The heat sink 11A is also electrically connected to an external power source (not shown), and also has a role of electrically connecting the first semiconductor laser 20 to the external power source.

  The submount 11B is for ensuring thermal conductivity to the heat sink 11A to prevent a rise in chip temperature during driving and to obtain a long life, and is made of, for example, silicon (Si). In order to improve this, you may be comprised by AlN.

  As shown in FIG. 2A, pad layers 12 </ b> A to 12 </ b> D for providing bump connection portions 50 are provided on the surface of the submount 11 </ b> B. It is preferable that at least the outermost surface of the pad layers 12A to 12D is made of aluminum (Al). This is because the bonding strength can be increased when the bump connection portion 50 is composed of a gold (Au) ball as will be described later. Specifically, the pad layers 12A to 12D have a structure in which, for example, a gold (Au) layer and an aluminum (Al) layer are sequentially stacked from the submount 11B side.

  A conductive adhesive layer 13 for disposing the first semiconductor laser 20 is formed in a region where the pad layers 12A to 12D are not formed on the surface of the submount 11B. The conductive adhesive layer 13 is preferably made of, for example, solder. This is because the thermal conductivity can be increased. Specific examples include tin (Sn), an alloy of gold (Au) and tin (Sn), an alloy of tin (Sn) and zinc (Zn), or an alloy of silver (Ag) and (Sn). . Note that the melting point of the solder constituting the conductive adhesive layer 13 is preferably lower than the melting point of the solder constituting the welding layer 40 for joining the first semiconductor laser 20 and the second semiconductor laser 30. Further, the conductive adhesive layer 13 may be made of, for example, silver (Ag) paste.

  The welding layer 11C is preferably made of a material that can ensure heat dissipation, and is preferably made of, for example, silver (Ag) paste or solder. In particular, the silver paste has the advantage that the production capacity can be increased, and the solder has the advantage of improved thermal conductivity. For example, in an optical disk device for reproduction, a silver paste is preferable because the calorific value is small because the drive current is low.

  For example, the first semiconductor laser 20 can emit light having a wavelength of about 400 nm. In the semiconductor laser 20, a first semiconductor layer 22 made of, for example, a nitride III-V compound semiconductor is provided on a first substrate 21 made of, for example, GaN. Here, the nitride-based III-V group compound semiconductor is at least one of group 3B elements in the short period type periodic rate table and at least nitrogen (N) of group 5B elements in the short period type periodic rate table. It means that includes. The first semiconductor laser 20 is bonded to the submount 11B with the first substrate 21 side facing the submount 11B and the conductive adhesive layer 13 therebetween.

  The first substrate 21 is made of, for example, n-type GaN to which silicon (Si) is added as an n-type impurity, and the thickness in the stacking direction (hereinafter simply referred to as thickness) is, for example, 80 to 100 μm. is there. Also, since GaN is a material having a high thermal conductivity of about 1.3 W / (cm · K) and excellent in thermal conductivity, the first semiconductor laser 20 having the first substrate 21 made of GaN is the first semiconductor laser 20. The thermal conductivity is larger than that of the second semiconductor laser 30. Therefore, in this semiconductor laser device 10A, the submount 11B, the first semiconductor laser 20 and the second semiconductor laser 30 are stacked in order from the one having the largest thermal conductivity to the one having the smallest thermal conductivity, thereby improving the heat dissipation performance and the lifetime. Can be secured.

Although not shown, the first semiconductor layer 22 has, for example, a configuration in which an n-type cladding layer, an active layer, a deterioration preventing layer, a p-type cladding layer, and a p-side contact layer are stacked in this order from the first substrate 21 side. is doing. The n-type cladding layer is made of, for example, an n-type AlGaN mixed crystal to which silicon is added as an n-type impurity. The active layer has a multiple quantum well structure of a well layer and a barrier layer formed by mixed crystals of Ga _x In _1-x N (where x ≧ 0) having different compositions. This active layer functions as a light emitting portion. The deterioration preventing layer is made of, for example, a p-type AlGaN mixed crystal to which magnesium (Mg) is added as a p-type impurity. The p-type cladding layer is made of, for example, a p-type AlGaN mixed crystal to which magnesium is added as a p-type impurity. The p-side contact layer is made of, for example, p-type GaN to which magnesium is added as a p-type impurity. A part of the p-type cladding layer and the p-side contact layer are formed in a thin band extending in the direction of the resonator for current confinement, and a region corresponding to the p-side contact layer in the active layer is a light emitting region (current Injection region). The side surfaces of the p-side contact layer and the upper surface of the p-type cladding layer are covered with an insulating layer made of silicon dioxide (SiO ₂ ) or the like.

  A p-side electrode 23 is formed on the second semiconductor layer 22. The p-side electrode 23 is formed, for example, by sequentially laminating palladium (Pd), platinum (Pt), and gold (Au) from the second semiconductor layer 22 side, and is electrically connected to the p-side contact layer of the second semiconductor layer 22. Connected. An n-side electrode 24 is provided on the back surface of the first substrate 21. For example, the n-side electrode 24 is formed by sequentially laminating titanium (Ti) and aluminum (Al) from the side of the first substrate 21 and alloying them by heat treatment, and the submount 11B via the conductive adhesive layer 13. And are electrically connected.

  In the first semiconductor laser 20, a pair of end faces opposed in the resonator direction are resonator end faces, and a reflecting mirror film (not shown) is formed on each of the pair of resonator end faces. Yes. Of the pair of reflecting mirror films, one reflecting mirror film is adjusted to have a low reflectance, and the other reflecting mirror film is adjusted to have a high reflectance. As a result, light generated in the active layer is amplified by reciprocating between the pair of reflecting mirror films, and is emitted as a laser beam from the reflecting mirror film having a low reflectance.

  In the second semiconductor laser 30, for example, a first laser oscillation unit 60 and a second laser oscillation unit 70 are formed in parallel as a second semiconductor layer 32 on a second substrate 31 made of GaAs. The first laser oscillating unit 60 and the second laser oscillating unit 70 are arranged with the resonator direction aligned with the first semiconductor laser 20 with a gap of, for example, about 200 μm or less. In addition, a distance between a light emitting region described later of the first laser oscillation unit 60 and a light emitting region described later of the second laser oscillation unit 70 is about 110 μm, and the first laser beam is directly below the light emission region of the second laser oscillation unit 70. The light emitting region of the semiconductor laser 20 is located. The distance between the light emitting region of the second laser oscillation unit 70 and the light emitting region of the first semiconductor laser 20 is about 5 μm.

  For example, the second substrate 31 has a thickness of about 100 μm and is made of n-type GaAs to which silicon is added as an n-type impurity.

  The first laser oscillation unit 60 includes, for example, III- containing at least gallium (Ga) of the 3B group elements in the short period periodic table and at least arsenic (As) of the 5B group elements in the short period periodic table. An n-type cladding layer, an active layer, a p-type cladding layer, and a p-type cap layer made of a V group compound semiconductor are stacked in this order from the second substrate 31 side.

Specifically, the n-type cladding layer is made of, for example, an n-type AlGaAs mixed crystal to which silicon is added as an n-type impurity. The active layer has, for example, a multiple quantum well structure of a well layer and a barrier layer formed by mixed crystals of Al _x Ga _1-x As (where x ≧ 0) having different compositions. In addition, this active layer functions as a light emission part, The light emission wavelength is a 700 nm band, for example. The p-type cladding layer is made of, for example, a p-type AlGaAs mixed crystal to which zinc is added as a p-type impurity. The p-type cap layer 44 is made of, for example, p-type GaAs to which zinc is added as a p-type impurity. Note that a part of the p-type cladding layer and the p-type cap layer have a thin band shape extending in the direction of the resonator for current confinement, and the region of the active layer corresponding to the p-type cap layer is a light emitting region (current Injection region). Current blocking regions are provided on both sides of the belt-like portion.

  A p-side electrode 61 is formed on the first laser oscillation unit 60. The p-side electrode 61 is formed, for example, by sequentially laminating titanium (Ti), platinum (Pt), and gold (Au) from the first laser oscillation unit 60 side, and the p-type cap layer of the first laser oscillation unit 60. And are electrically connected.

  The second laser oscillation unit 70 includes, for example, at least indium (In) of the 3B group elements in the short periodic table and at least phosphorus (P) of the 5B group elements in the short periodic table. An n-type cladding layer, an active layer, a p-type cladding layer, and a p-type cap layer made of a V group compound semiconductor are stacked in this order from the second substrate 31 side.

Specifically, the n-type cladding layer is made of, for example, an n-type AlGaInP mixed crystal to which silicon is added as an n-type impurity. The active layer has, for example, a multiple quantum well structure of a well layer and a barrier layer formed by mixed crystals of Al _x Ga _y In _1-xy P (where x ≧ 0 and y ≧ 0) having different compositions. ing. In addition, this active layer functions as a light emission part, The light emission wavelength is a 600 nm band, for example. The p-type cladding layer is made of, for example, a p-type AlGaInP mixed crystal to which zinc is added as a p-type impurity. The p-type cap layer is made of, for example, p-type GaAs to which zinc is added as a p-type impurity. Note that a part of the p-type cladding layer and the p-type cap layer have a thin band shape extending in the direction of the resonator for current confinement, and the region of the active layer corresponding to the p-type cap layer is a light emitting region (current Injection region). Current blocking regions are provided on both sides of the belt-like portion.

  On the second laser oscillation unit 70, a p-side electrode 71 that is electrically connected to the p-type cap layer and has the same configuration as the p-side electrode 61, for example, is provided.

  On the other hand, an n-side electrode 33 common to the first laser oscillation unit 60 and the second laser oscillation unit 70 is formed on the back surface of the second substrate 31. The n-side electrode 33 is, for example, an alloy of gold (Au) and germanium (Ge), nickel (Ni), and gold (Au) sequentially laminated from the second substrate 31 side and alloyed by heat treatment. is there.

  Further, in the second semiconductor laser 30, a pair of end faces facing each other in the direction of the resonator is a resonator end face, and the first laser oscillating unit 60 and the second laser oscillating unit 70 are respectively connected to the pair of resonator end surfaces. Each has a reflecting mirror film (not shown). In these pair of reflecting mirror films, the level of reflectivity is set so as to correspond to a pair of reflecting mirror films (not shown) provided in the first semiconductor laser 20, respectively. The first laser oscillation unit 60 and the second laser oscillation unit 70 of the semiconductor laser 30 emit light from the same side.

  FIG. 2B shows a configuration in which the second semiconductor laser 30 is viewed from the first semiconductor laser 20 side. Four wiring pattern layers 34A, 34B, 34C, and 34D are provided on the surface of the second semiconductor laser 30 facing the first semiconductor laser 20, and the other regions are insulating layers made of silicon dioxide or the like. 35. The wiring pattern layers 34A to 34D are made of, for example, gold (Au).

  The wiring pattern layer 34 </ b> A is electrically connected to the p-side electrode 23 of the first semiconductor laser 20 through the welding layer 40. The wiring pattern layer 34B is electrically connected to the p-side electrode 71 of the second laser oscillation unit 70, and the wiring pattern layer 34C is electrically connected to the p-side electrode 61 of the first laser oscillation unit 60. These wiring pattern layers 34 </ b> A to 34 </ b> C are formed so as to extend over the extended region 30 </ b> A beyond the junction region 30 </ b> B with the first semiconductor laser 20. On the other hand, the wiring pattern layer 34D is formed only in the overhang region 30B. The wiring pattern layer 34D is provided as a dummy for stabilizing the posture of the second semiconductor laser 30, and is not necessarily provided. In this case, the pad layer 12D is not necessary.

  The welding layer 40 is made of, for example, solder. As the constituent material of the welding layer 40, for example, similarly to the conductive adhesive layer 13, for example, an alloy of tin (Sn), gold (Au) and tin (Sn), an alloy of tin (Sn) and zinc (Zn) Or the alloy of silver (Ag) and (Sn) is mentioned.

  The bump connection portion 50 is provided between the portion of the wiring pattern layers 34A to 34D that covers the overhang region 30BA and the corresponding pad layers 13A to 13D. For example, gold (Au), aluminum (Al ) And copper (Cu), and is preferably constituted by a ball bump made of at least one kind. This is because they are easily crushed and can absorb manufacturing variations in the thickness of the first semiconductor laser 20. Of these, gold (Au) is preferable. This is because gold (Au) has a high thermal conductivity, and thus heat generated by the second semiconductor laser 30 can be directly dissipated to the submount 11B via the bump connection portion 50. The height of the bump connection portion 50 needs to be equal to or greater than the thickness of the first semiconductor laser 20. Therefore, two or more bump connection portions 50 may be stacked depending on the thickness of the first semiconductor laser 20 and the dimensions of the ball bumps.

  This semiconductor laser device 10A is housed and used inside a package 1 as shown in FIG. 3, for example. The package 1 includes, for example, a disk-shaped support 2 and a lid (not shown) provided on one surface side of the support 2. Inside the lid, the support base 11 is supported by the support 2 to accommodate the semiconductor laser device 10A, and the light emitted from the semiconductor laser device 10A is emitted from a lid extraction window (not shown). It comes to be taken out.

  The package 1 is provided with a plurality of conductive pins 3 </ b> A to 3 </ b> E, and the pins 3 </ b> E are electrically connected to the support base 11. The other pins 3A to 3D penetrate the support body 2 through, for example, insulating rings 4A to 4D, and are provided from the inside of the lid body toward the outside. Pad layer 12A is electrically connected to pin 3A via wire 5A, pad layer 13B is electrically connected to pin 3B via wire 5B, and pad layer 13C is connected to pin 3C via wire 5C. Are electrically connected. The n-side electrode 33 is electrically connected to the heat sink 11A through the wire 5F. Here, the package 1 including the five pins 3A to 3E has been described as an example, but the number of pins can be set as appropriate. The wires 5A to 5C and 5F are made of, for example, gold (Au).

  Such a semiconductor laser device 10A can be manufactured as follows.

  First, as shown in FIG. 4A, for example, a first substrate 21 made of n-type GaN having a thickness of, for example, about 400 μm is prepared, and, for example, MOCVD (Metal Organic Chemical Vapor Deposition) is formed on the surface of the first substrate 21. The second semiconductor layer 22 made of the above-described material is grown by the metal organic chemical vapor deposition method, and the p-side electrode 23 is formed thereon. Further, the back surface side of the first substrate 21 is lapped and polished, for example, so that the thickness of the first substrate 21 is about 100 μm, for example, and then the n-side electrode 24 is formed on the back surface of the first substrate 21. In FIG. 4, the second semiconductor layer 22, the p-side electrode 23, and the n-side electrode 24 are omitted.

  Next, as shown in FIG. 4B, the first substrate 21 is cleaved with a predetermined width perpendicular to the length direction of the p-side electrode 23, for example, and a pair of reflector films is formed on the cleaved surface. To do. Subsequently, as shown in FIG. 4C, the first substrate 21 is cut and adjusted to a predetermined chip size. Thereby, the first semiconductor laser 20 is manufactured.

  On the other hand, as shown in FIG. 5A, for example, a second substrate 31 made of n-type GaAs having a thickness of about 350 μm is prepared, and the surface of the second substrate 31 is made of the above-described material by MOCVD. The first laser oscillation unit 60 and the second laser oscillation unit 70 are respectively formed, and the p-side electrodes 61 and 71 are respectively formed thereon. Subsequently, as illustrated in FIGS. 5B and 6, the insulating layer 35, the wiring pattern layers 34 </ b> A to 34 </ b> D, and the welding layer 40 are formed on the p-side electrodes 61 and 71. In FIG. 5, the first laser oscillation unit 60, the second laser oscillation unit 70, the p-side electrodes 61 and 71, and the insulating layer 35 are omitted.

  Further, the back surface side of the second substrate 31 is lapped and polished, for example, so that the thickness of the second substrate 31 is, for example, about 100 μm. The n-side electrode 33 common to the two laser oscillators 70 is formed.

  After that, the second substrate 31 is cleaved with a predetermined width perpendicular to the length direction of the p-side electrodes 46 and 57, for example, and a pair of reflecting mirror films are formed on the cleaved surface. Subsequently, the second substrate 31 is cut and adjusted to a predetermined chip size. Thereby, the second semiconductor laser 30 is manufactured.

After the first semiconductor laser 20 and the second semiconductor laser 30 are respectively fabricated in this manner, the second semiconductor laser 30 is heated to a heating stage 81 in a nitrogen (N ₂ ) atmosphere as shown in FIG. The first semiconductor laser 20 is placed on the second semiconductor laser 30 and pressed by a collet 82 for applying a weight.

  At this time, first, adjustment is made so that the light emitting region of the first semiconductor laser 20 is positioned directly below the light emitting region of the second laser oscillation unit 70. This alignment can be performed by recognizing each contour. In order to obtain higher accuracy, the first semiconductor laser 20 and the second semiconductor laser 30 may emit light to perform image recognition. The switching point between the outer shape recognition and the light emission point recognition depends on the manufacturing equipment and the management standard and cannot be determined uniformly. However, in general, the outer shape recognition is desirable when the thickness is about 20 μm, and the light emission point recognition is more desirable. In addition, since the positional relationship between the first laser oscillation unit 60 and the second laser oscillation unit 70 is determined by the mask accuracy, about 1 μm is achieved. Therefore, the bonding accuracy between the first semiconductor laser 20 and the second semiconductor laser 30 determines the alignment accuracy of the light emitting unit.

  Subsequently, as shown in FIG. 7, the second semiconductor laser 30 and the first semiconductor laser 20 are bonded to each other with the weld layer 40 interposed between the second semiconductor laser 30 and the first semiconductor laser 20 with heating applied with a collet 82. At that time, for example, when the welding layer 40 is made of tin (Sn), in the heat treatment, preheating is performed to 80 ° C., the temperature is raised to 280 ° C. in 20 seconds, held for 30 seconds, and then cooled to 80 ° C. This temperature profile is an example and is not uniform because it depends on the collet 82 and the soldering equipment.

  After joining the first semiconductor laser 20 and the second semiconductor laser 30, as shown in FIG. 8, for example, gold (Au) wires are used to form bump connection portions 50 on the wiring pattern layers 34A to 34D. Form. At this time, the height of the bump connection portion 50 is set higher than that of the first semiconductor laser 20. The bump connection portion 50 is preferably provided on the second semiconductor laser 30 side, that is, on the wiring pattern layers 34A to 34D. This is because flip-chip bonding can be performed on the wafer-shaped submount 11B, and productivity can be improved. It is possible to provide the bump connection portion 50 on the submount 11B side, but in this case, bump connection is made between pieces, and it is difficult to increase productivity.

  After that, as shown in FIG. 9, the submount 11B provided with the pad layers 12A to 12D and the conductive adhesive layer 13 in advance is prepared, and the submount is interposed between the bump connecting portions 50 by, for example, ultrasonic bonding. 11B and the second semiconductor laser 30 are joined by flip chip bonding.

  After flip-chip bonding of the submount 11B and the second semiconductor laser 30 with ultrasonic bonding with the bump connection portion 50 in between, a separate heat treatment is performed, and the first semiconductor laser with the conductive adhesive layer 13 in between. 20 and the submount 11B are joined.

  After that, the size of the submount 11B is adjusted by dicing. Further, the submount 11B is joined to the heat sink 11A with the welding layer 11C interposed therebetween. Thus, the semiconductor laser device 10A shown in FIG. 1 is completed.

  This semiconductor laser device 10A is housed in the package 1 as shown in FIG. 3 and operates as follows.

  In this semiconductor laser device 10A, when a voltage is applied between the p-side electrode 23 and the n-side electrode 24 of the first semiconductor laser 20 via the pin 3A and the pin 3E of the package 1, a current flows in the active layer. The light is injected and light is emitted by electron-hole recombination, and light having a wavelength of about 400 nm is emitted from the first semiconductor laser 20. Further, when a predetermined voltage is applied between the n-side electrode 33 and the p-side electrode 61 of the second semiconductor laser 30 via the pin 3C and the pin 3E, a current is injected into the active layer, and the electron-positive Light emission occurs due to hole recombination, and light having a wavelength in the 700 nm band is emitted from the first laser oscillation unit 60. Further, when a predetermined voltage is applied between the n-side electrode 33 and the p-side electrode 71 of the second semiconductor laser 30 via the pin 3B and the pin 3E, a current is injected into the active layer, and the electron-positive Light emission occurs due to hole recombination, and light having a wavelength in the 600 nm band is emitted from the second laser oscillation unit 70. These lights are extracted to the outside of the package 1 through an extraction window (not shown) of the package 1.

  Although heat is also generated during light emission, the first semiconductor laser 20 having a higher thermal conductivity than the second semiconductor laser 30 is disposed on the submount 11B. The heat generated in the laser oscillation unit 60 or the second laser oscillation unit 70 is quickly dissipated to the heat sink 11A via the first semiconductor laser 20 and the submount 11B. The heat generated in the first semiconductor laser 20 is quickly dissipated to the heat sink 11A through the submount 11B.

  As described above, in the semiconductor laser device 10A of the present embodiment, the first semiconductor laser 20 having a higher thermal conductivity than the second semiconductor laser 30 is disposed on the submount 11B. It is possible to increase the lifetime. Further, since the bump connection portion 50 is provided between the overhanging region 30A of the second semiconductor laser 30 and the submount 11B, the first semiconductor laser 20 or the second semiconductor laser 20 or the second semiconductor laser 20 is connected via the bump connection portion 50. Electrical connection between the semiconductor laser 30 and an external power source can be established. Therefore, the size of the first semiconductor laser 20 can be reduced, and the raw material cost can be suppressed.

  In particular, since the bump connection part 50 is composed of at least one selected from the group consisting of gold (Au), aluminum (Al), and copper (Cu), manufacturing variations in the thickness of the first semiconductor laser 20 are absorbed. be able to.

  In the above embodiment, the case where the first laser oscillation unit 60 and the second laser oscillation unit 70 of the second semiconductor laser 30 are formed on the same second substrate 31 has been described. As shown, these may be formed on separate second substrates 31.

  The semiconductor laser device 10A is used, for example, in an optical disc recording / reproducing apparatus. FIG. 11 schematically shows the configuration of the optical disc recording / reproducing apparatus. This optical disc recording / reproducing apparatus 100 is for reproducing information recorded on the optical disc D using light having different wavelengths and recording information on the optical disc D. The optical disc recording / reproducing apparatus 100 guides the semiconductor laser device 10A according to the present embodiment and the emitted light Lout having a predetermined emission wavelength emitted from the semiconductor laser device 10A to the optical disc D, and the signal light (reflected) from the optical disc D. And an optical system for reading light (Lref). This optical system includes, for example, a beam splitter 111, a quarter-wave plate 112 for suppressing return light noise, a rising mirror 113, an objective lens 114, a light receiving element, and a signal light reproducing circuit (none of which are shown). ) And the like.

  In the optical disc recording / reproducing apparatus 100, for example, the high intensity outgoing light Lout emitted from the semiconductor laser device 10A is reflected by the beam splitter 111 and reflected by the rising mirror 113. The outgoing light Lout reflected by the rising mirror 113 is collected by the objective lens 114 and enters the optical disc D. As a result, information is written on the optical disc D. Further, for example, the weak emitted light Lout emitted from the semiconductor laser device 10A enters the optical disc D through each optical system as described above, and then is reflected by the optical disc D. The reflected light Lref passes through the objective lens 114, the rising mirror 113, and the beam splitter 111, and enters the light receiving element of the signal light detector 115, where it is converted into an electrical signal, and then converted into an optical signal by the signal light reproducing circuit. The information written in D is reproduced.

  As described above, the semiconductor laser device 10A according to the present embodiment has high heat dissipation performance, and the size of the first semiconductor laser 20 is reduced. Therefore, if this semiconductor laser device 10A is used, the lifetime can be secured and the raw material cost can be suppressed. Therefore, cost reduction of the optical disc recording / reproducing apparatus 100 can be realized.

  In addition, since the semiconductor laser device 10A of the present embodiment can obtain light emission of three wavelengths of around 400 nm, 600 nm band, and 700 nm band, CD-ROM (Read Only Memory), CD-R, CD-RW, Recording and reproduction can be performed not only on various existing optical disks such as MD and DVD-ROM, but also on next-generation optical disks such as Blu-ray or HD-DVD. If such a next-generation recordable large-capacity disk can be used, video data can be recorded and the recorded data (image) can be reproduced with good image quality and good operability.

  Here, an example in which the semiconductor laser device 10A is applied to an optical disk recording / reproducing apparatus has been described. However, in order to perform recording / reproducing of an optical disk reproducing apparatus, an optical disk recording apparatus, a magneto-optical disk (MO), or the like. The present invention can be applied not only to optical devices such as magneto-optical disk devices or optical communication devices, but also to devices equipped with an in-vehicle semiconductor laser device that needs to operate at a high temperature.

  Although an example in which an optical system is provided separately from the semiconductor laser device 10A is described here, a three-wavelength integrated optical element (laser coupler) incorporating the semiconductor laser device 10A and a part of the optical system is realized. It is also possible to do.

[Second Embodiment]
Next, a method for manufacturing a semiconductor laser device according to the second embodiment of the present invention will be described. In this manufacturing method, both the pad layers 12A to 12D and the conductive adhesive layer 13 are made of the same material, and at the same time when the submount 11B and the second semiconductor laser 30 are flip-chip bonded with the bump connection portion 50 therebetween. In the bonding of the first semiconductor laser 20 and the submount 11B with the conductive adhesive layer 13 in between, the manufacturing method described in the first embodiment is different. This manufacturing method is not limited to the case of manufacturing the semiconductor laser device according to the first embodiment, but in order to facilitate understanding, the manufacturing method shown in FIG. 1 shown in the first embodiment is used. A case of manufacturing the semiconductor laser device 10A as shown will be described. Further, portions where the manufacturing steps overlap with those of the first embodiment will be described with reference to FIGS.

  First, similarly to the first embodiment, the first semiconductor laser 20 and the second semiconductor laser 30 are formed by the steps shown in FIGS. And join.

  Next, the pad layers 12A to 12D and the conductive adhesive layer 13 are provided on the submount 11B. At that time, the conductive adhesive layer 13 is made of the same material as the pad layers 12A to 12D. That is, at least the outermost surface is made of aluminum (Al). Specifically, the conductive adhesive layer 13 has a structure in which, for example, a gold (Au) layer and an aluminum (Al) layer are sequentially stacked from the submount 11B side, similarly to the pad layers 12A to 12D.

  Subsequently, similarly to the first embodiment, bump connection portions 50 are formed in the wiring pattern layers 34A to 34D by the process shown in FIG.

  After that, by the process shown in FIG. 9, for example, by ultrasonic bonding, the second semiconductor laser 30 and the submount 11 </ b> B are bonded by flip chip bonding with the bump connection portion 50 interposed therebetween, and at the same time, the conductive adhesive layer 13. The first semiconductor laser 20 and the submount 11B are bonded to each other. Thereby, the advantage that electrical connection and heat radiation path ensuring can be achieved in the same process is acquired.

  After the joining is completed, similarly to the first embodiment, the size of the submount 11B is adjusted by dicing, and joined to the heat sink 11A with the welding layer 11C in between. Thus, the semiconductor laser device 10A shown in FIG. 1 is completed.

  As described above, in the manufacturing method of the semiconductor laser device 10A according to the present embodiment, the bump connection portion 50 is provided in the overhanging region 30A of the second semiconductor laser 30 and then the bump is formed as in the first embodiment. Since the overhanging region 30A of the second semiconductor laser 30 and the submount 11B are bonded with the connection portion 50 in between, it is possible to perform flip chip bonding to the wafer-shaped submount 11B. Therefore, it is not necessary to perform bump connection between individual pieces as in the case where the bump connection portion 50 is provided on the submount 11B side, and productivity can be significantly increased.

  Further, the pad layers 12A to 12D and the conductive adhesive layer 13 are made of the same material, and the second semiconductor laser 30 and the submount 11B are bonded at the same time with the bump connection portion 50 interposed therebetween, and at the same time, the conductive adhesive is bonded. Since the first semiconductor laser 20 and the submount 11B are bonded together with the layer 13 in between, electrical connection and heat radiation path securing can be achieved in the same process.

[Modification]
FIG. 12 shows a cross-sectional configuration of a semiconductor laser device according to a modification of the present invention. This semiconductor laser device 10B has the same configuration as the semiconductor laser device 10A of the above-described embodiment except that the bump connection portion 50 is made of solder. Therefore, corresponding elements will be described with the same reference numerals.

The bump connection portion 50 is preferably made of solder having a melting point lower than that of the solder constituting the welding layer 40. Specifically, as a constituent material of the bump connection part 50, for example, an alloy of tin (Sn), gold (Au) and tin (Sn), an alloy of tin (Sn) and zinc (Zn), or silver ( An alloy of (Ag) and (Sn) can be used, and the alloy is selected in consideration of the melting point of the weld layer 40. For example, when the welding layer 40 is made of tin (Sn), the bump connection portion 50 is made of an alloy of tin (Sn) and zinc (Zn), specifically, Sn _0.09 Zn _0.91. preferable. This is because the melting point is lower than that of tin (Sn) and the spread at the time of melting the solder is not large so that occurrence of defects such as a short circuit can be suppressed.

In this case, the pad layers 12 </ b> A to 12 </ b> D and the conductive adhesive layer 13 on the submount 11 </ b> B are also preferably made of the same material as that of the bump connection portion 50. For example, when the bump connection part 50 is made of Sn _0.09 Zn _0.91 , the pad layers 12A to 12D and the conductive adhesive layer 13 are also made of Sn _0.09 Zn _0.91 .

  The semiconductor laser device 10B can be manufactured, for example, as follows.

  First, the first semiconductor laser 20 and the second semiconductor laser 30 are formed in the same manner as in the above embodiment, and are bonded together with the welding layer 40 in between.

Next, a submount 11B in which the pad layers 12A to 12D and the conductive adhesive layer 13 are provided in advance is prepared, and bump connection made of, for example, a columnar Sn _0.09 Zn _0.91 having a height of 130 μm is provided on the pad layers 12A to 12D. Part 50 is formed.

  Subsequently, the first semiconductor laser 20 is placed on the submount 11B, aligned by, for example, outer shape recognition, and heated to, for example, 220 ° C. while being weighted with a collet. As a result, the submount 11B and the second semiconductor laser 30 are bonded with the bump connection portion 50 interposed therebetween, and at the same time, the first semiconductor laser 20 and the submount 11B are bonded with the conductive adhesive layer 13 interposed therebetween. .

  After that, the size of the submount 11B is adjusted by dicing. Further, the submount 11B is joined to the heat sink 11A with the welding layer 11C interposed therebetween. Thus, the semiconductor laser device 10B shown in FIG. 12 is completed.

  The operation and effect of this semiconductor laser device 10B are the same as in the above embodiment.

  In this modification as well, as shown in FIG. 13, the first laser oscillation unit 60 and the second laser oscillation unit 70 of the second semiconductor laser 30 may be formed on separate second substrates 31. Good.

  The present invention has been described with reference to the embodiment. However, the present invention is not limited to the above embodiment, and various modifications can be made. For example, in the above embodiment, the case where the first semiconductor laser 20 and the second semiconductor laser 30 are configured to emit light having different wavelengths from each other has been described. However, the first semiconductor laser is formed on the support base 11. It is also possible to stack a plurality of lasers 20. Further, it is possible to stack a plurality of semiconductor lasers having different characteristics or structures. In that case, the emission wavelengths may be the same or different. When a plurality of semiconductor lasers having different characteristics are stacked, for example, a low output and a high output can be mixed.

  In the above embodiment, the case where the first semiconductor laser 20 has one light emitting unit has been described. However, the first semiconductor laser 20 may have a plurality of light emitting units. Specifically, it may be configured to have a plurality of laser oscillation units in the same manner as the second semiconductor laser 30. In that case, the emission wavelengths of the laser oscillation units may be the same or different. Also, the characteristics or structure may be the same or different.

  Furthermore, in the above embodiment, the case where the second semiconductor laser 30 has two laser oscillation units has been described as an example. However, the number of laser oscillation units of the second semiconductor laser 30 is shown in FIG. As such, there may be one, or three or more. The emission wavelength, characteristics, and structure of each of these laser oscillation units may be the same or different. FIG. 14 shows the case where the second semiconductor laser 30 has only the first laser oscillation unit 60.

  In addition, the present invention can be applied regardless of the size relationship between the first semiconductor laser 20 and the second semiconductor laser 30. That is, the second semiconductor laser 30 does not necessarily have a size larger than that of the first semiconductor laser 20, and even if the second semiconductor laser 30 is smaller than the first semiconductor laser 20, a part of the second semiconductor laser 30 is the first. What is necessary is just to join so that the surrounding of the semiconductor laser 20 of 1 may protrude in the shape of a bowl. For example, as shown in FIG. 14, even when the second semiconductor laser 30 has only the first laser oscillation unit 60, the second semiconductor laser 30 may be smaller than the first semiconductor laser 20.

  In the above embodiment, the second semiconductor laser 30 is a so-called monolithic multi-wavelength laser. However, in the present invention, the second semiconductor laser 30 is a so-called hybrid multi-wavelength laser. It can also be applied in some cases.

  In addition, the material and thickness of each layer described in the above embodiment, the film formation method, the film formation conditions, and the like are not limited, and other materials and thicknesses may be used. It is good also as a method and film-forming conditions. For example, in the above-described embodiment, the case where each layer made of a GaN-based, AlGaAs-based, and AlGaInP-based compound is formed by the MOCVD method has been described. Alternatively, other vapor deposition methods may be used. The hydride vapor deposition method refers to a vapor deposition method in which halogen contributes to transport or reaction.

  Furthermore, in the above embodiment, the case where a GaAs substrate is used as the second substrate 31 of the second semiconductor laser 30 has been described. However, a substrate made of another material such as a GaP substrate or a ZnSe substrate may be used. Good.

  In addition, in the said embodiment, although the specific example was given and demonstrated about the structure and material of the support base | substrate 11, it is good also as another structure and material. For example, the submount 11B of the support base 11 may be omitted and only the heat sink 11A may be configured. In addition, it is preferable that the support base 11 has high thermal conductivity. For example, in the above embodiment, the heat sink 11A is made of metal, but the heat sink may be made of an insulating material, and wiring may be provided thereon.

  Furthermore, in the above embodiment, the first semiconductor laser 20 and the second semiconductor laser 30 have been described with specific dimensions. However, the dimensions of the first semiconductor laser 20 or the second semiconductor laser 30 are described. Is not limited to the above example.

  In addition, in the above embodiment, the first semiconductor laser 20 or the second semiconductor laser 30 has been described with an example of a specific structure. However, the present invention is not limited to the first semiconductor laser 20 or the second semiconductor laser 30. The same applies to the case where the semiconductor laser 30 has another structure. For example, the first semiconductor laser 20 may be configured to be current confined by the current block region in the same manner as the second semiconductor laser 30, or the second semiconductor laser 30 may be silicon dioxide or the like as in the first semiconductor laser 20. A structure in which the current is confined by an insulating layer may be used. In the above embodiment, a ridge waveguide type semiconductor laser combining a gain waveguide type and a refractive index waveguide type has been described as an example. However, a gain waveguide type semiconductor laser and a refractive index waveguide type are described. The same can be applied to the semiconductor laser of FIG. Furthermore, in the above-described embodiment, the configuration of the semiconductor laser has been specifically described. However, it is not necessary to provide all the layers, and other layers may be further provided. For example, a light guide layer may be provided between the active layer and the n-type cladding layer or the p-type cladding layer.

  Furthermore, in the above-described embodiment, the support base 11 is directly supported by the support 2 when housed in the package 1. However, the mounting base is provided on the support 2, and the support base is provided on the mounting base. 11 may be placed.

  In addition, in the above embodiment, a can package is described as a specific example as the package 1, but the present invention can also be applied to a ceramic package, a mold, or a lead frame.

  Furthermore, in the above-described embodiment, the semiconductor laser has been described as a specific example of the optical element. However, the present invention relates to an optical device including another semiconductor light emitting element such as a light emitting diode (LED). Can also be applied. Furthermore, the present invention includes a semiconductor laser or LED as the first optical element, and further includes a light control element that changes the light path, such as a lens made of resin or glass, as the second optical element. It can also be applied to optical devices.

It is sectional drawing showing the structure of the semiconductor laser apparatus which concerns on one embodiment of this invention. 2A is a plan view showing a configuration of the second semiconductor laser viewed from the submount side, and FIG. 2B is a plan view showing a configuration of the submount viewed from the first semiconductor laser side. is there. It is a front view showing the structure of the package in which the semiconductor laser apparatus shown in FIG. 1 was accommodated. It is a perspective view for demonstrating the manufacturing method of the semiconductor laser apparatus shown in FIG. It is a perspective view for demonstrating the manufacturing process following FIG. It is sectional drawing and a top view for demonstrating the manufacturing process shown to FIG. 5 (B). FIG. 7 is a cross-sectional view for explaining a manufacturing step subsequent to FIG. 6. It is a top view for demonstrating the manufacturing process following FIG. It is a perspective view for demonstrating the manufacturing process following FIG. FIG. 10 is a cross-sectional view illustrating a modification of the semiconductor laser device illustrated in FIG. 1. It is a block diagram showing the optical disk recording / reproducing apparatus using the semiconductor laser apparatus shown in FIG. It is sectional drawing showing the structure of the semiconductor laser apparatus which concerns on the modification of this invention. FIG. 13 is a cross-sectional view illustrating a modification of the semiconductor laser device illustrated in FIG. 12. FIG. 10 is a cross-sectional view illustrating another modification of the semiconductor laser device illustrated in FIG. 1. It is sectional drawing which represents typically the example of 1 structure of the conventional semiconductor laser apparatus. It is sectional drawing which represents typically the example of another structure of the conventional semiconductor laser apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Package, 2 ... Support body, 3A-3E ... Pin, 4A-4D ... Insulation ring, 5A-5C, 5F ... Wire, 10A, 10B ... Semiconductor laser apparatus, 11 ... Support base | substrate, 11A ... Heat sink, 11B ... Sub Mount, 11C ... welding layer, 12A-12D ... pad layer, 13 ... conductive adhesive layer, 20 ... first semiconductor laser, 21 ... first substrate, 22 ... first semiconductor layer, 23, 61, 71 ... p side Electrode, 24, 33 ... n-side electrode, 30 ... second semiconductor laser, 30A ... overhang region, 30B ... junction region, 31 ... second substrate, 32 ... second semiconductor layer, 34A-34D ... wiring pattern layer, 35 ... Insulating layer, 40 ... Welding layer, 50 ... Bump connection part, 60 ... First laser oscillation part, 70 ... Second laser oscillation part, 111 ... Beam splitter, 112 ... Quarter wave plate, 113 ... Rising Mirror, 114 Objective lens, 115 ... optical signal detector

Claims (15)

An optical device containing a plurality of optical elements in the same package,
A support base provided in the package;
A first optical element disposed on the support substrate with a conductive adhesive layer therebetween, and having the highest thermal conductivity among the plurality of optical elements;
A second optical element joined to the first optical element so that a portion of the first optical element protrudes like a bowl around the first optical element;
A wiring pattern layer provided on the surface of the second optical element on the first optical element side so as to correspond to each of the plurality of optical elements and to cover at least the overhanging region;
A pad layer provided on the surface of the support base so as to correspond to a portion of the wiring pattern layer covering the overhang region;
An optical device comprising: a bump connection portion provided between a portion of the wiring pattern layer covering the projecting region and the pad layer . It said first optical element is Ru Oh the semiconductor light emitting element of the first substrate side is disposed so as to face the support base has a first semiconductor layer on the first substrate
請 Motomeko 1 optical device according. The second optical element is Ru Oh the semiconductor light emitting element of the second semiconductor layer side are disposed so as to face the first semiconductor layer and having a second semiconductor layer on the second substrate
Optical apparatus 請 Motomeko 2 wherein. The second optical element is made of a resin or glass, Ru Oh a light control element for changing the path of light
Optical apparatus 請 Motomeko 2 wherein. The support base includes an integrated heat radiating member to the package, that has the pad layer is formed on the heat dissipation member
請 Motomeko 1 optical device according. The support base includes a heat dissipation member integrated with the package, and a support member provided between the heat dissipation member and the first semiconductor light emitting element, and the pad layer is formed on the support member. Ru
請 Motomeko 1 optical device according. Said second optical element including a plurality of light emitting portions
請 Motomeko 3 optical device according. Wherein the plurality of light emitting portions that are formed on the same substrate
Optical apparatus of 請 Motomeko 7 described. Wherein the plurality of light emitting portions that are formed on separate substrates
Optical apparatus of 請 Motomeko 7 described. The first substrate, that is composed of GaN
Optical apparatus 請 Motomeko 2 wherein. The second substrate, that is constituted by at least one of the group consisting of GaP substrate, GaAs substrate and a ZnSe substrate
請 Motomeko 3 optical device according. The bump connections are gold (Au), that is constituted by at least one of the group consisting of aluminum (Al) and copper (Cu)
請 Motomeko 1 optical device according. The bump connecting portion that is configured by solder
請 Motomeko 1 optical device according. A method of manufacturing an optical device in which a plurality of optical elements are accommodated in the same package,
Forming a first optical element having the highest thermal conductivity among the plurality of optical elements;
Forming a second optical element having a wiring pattern layer corresponding to each of the plurality of optical elements on a surface on the first optical element side;
Before SL first optical element, the second optical element, with a portion is bonded to protrude like eaves around the first optical element, the wiring pattern layer is at least the protruding region The process of making it take ,
Providing a bump connection portion on the wiring pattern layer in the overhang region of the second optical element;
Forming a pad layer for bonding the bump connection portion on the support base and a conductive adhesive layer for bonding the first optical element with the same material;
The first optical element and the support substrate are bonded to the pad layer and the portion of the wiring pattern layer over the protruding region with the bump connection portion in between, and at the same time with the conductive adhesive layer in between. method of manufacturing a step including optical apparatus for joining. An optical device including an optical device that accommodates a plurality of optical elements in the same package,
The optical device comprises:
A support base provided in the package;
A first optical element disposed on the support substrate with a conductive adhesive layer therebetween, and having the highest thermal conductivity among the plurality of optical elements;
A second optical element joined to the first optical element so that a portion of the first optical element protrudes like a bowl around the first optical element;
A wiring pattern layer provided on the surface of the second optical element on the first optical element side so as to correspond to each of the plurality of optical elements and to cover at least the overhanging region;
A pad layer provided on the surface of the support base so as to correspond to a portion of the wiring pattern layer covering the overhang region;
An optical device comprising: a bump connection portion provided between a portion of the wiring pattern layer covering the projecting region and the pad layer .

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