JP4937678B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

  The present invention rotates a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, and an optical disk substrate around a vertical axis in a horizontal plane, and supplies a cleaning liquid such as pure water to the surface of the substrate. The present invention relates to a substrate processing method and a substrate processing apparatus for drying a substrate.

  In the manufacturing process of semiconductor devices, using a lithography technique, for example, a photoresist is applied on a silicon substrate, a circuit pattern is printed on the resist film on the substrate using an exposure machine, and the exposed resist film is developed. A circuit pattern is formed on the resist film on the substrate by performing each process such as development with a liquid. Among these, in the development process, for example, a slit nozzle is used to supply a developer onto the resist film after exposure formed on the surface of the substrate, and then the substrate is rotated by a straight nozzle while rotating the substrate around a vertical axis in a horizontal plane. A cleaning liquid (rinsing liquid) such as pure water is discharged from the discharge port to the center of the substrate. The cleaning liquid supplied to the center of the substrate is diffused in the peripheral direction of the substrate by centrifugal force and spreads over the entire substrate, and the developer is washed away from the resist film on the substrate surface. When this cleaning process (rinsing process) is completed, the supply of the cleaning liquid from the nozzle to the substrate is stopped, and then the number of rotations of the substrate is further increased to shake off the cleaning liquid on the resist film on the substrate surface by centrifugal force. Thus, the substrate is dried (spin drying).

  However, when the substrate is spin-dried as described above, a droplet of the cleaning liquid may remain on the substrate. This is because, in the substrate after the development processing, the hydrophilic portion and the hydrophobic portion are mixed on the surface of the resist film, thereby causing variation in the retention of the cleaning liquid on the substrate. Thus, it has been found that the droplets of the cleaning liquid remaining on the spots on the resist pattern formed on the surface of the substrate cause development defects.

In order to solve the above-described problems, when the substrate is spin-dried, the discharge port of the discharge nozzle is scanned from the central portion of the substrate toward the peripheral portion while discharging the cleaning solution from the discharge port of the cleaning liquid discharge nozzle. (Scan rinse method) has been proposed. According to this method, since the drying proceeds while the liquid film of the cleaning liquid is formed and held from the center to the periphery of the substrate, the surface of the resist film is a mixture of hydrophilic and hydrophobic parts. However, it becomes difficult for droplets of the cleaning liquid to remain on the substrate. Further, when the discharge nozzle is scanned while discharging the cleaning liquid from the discharge port of the cleaning liquid discharge nozzle, the air ejection nozzle is integrated with or synchronized with the cleaning liquid discharge nozzle while the gas is ejected from the air ejection nozzle. A method is also proposed in which the head is moved toward the periphery (see, for example, Patent Document 1).
Japanese Patent No. 3694641 (page 7-9, FIG. 3, FIG. 4 and FIG. 6 to FIG. 8)

  In the above-described scan rinse, development defects can be greatly reduced as compared with conventional spin drying. However, when the scan rinse method is applied to a substrate having a resist film surface with high water repellency (for example, the contact angle of water is 60 ° or more), development defects occur due to the following phenomenon. I understood.

  That is, when the discharge nozzle is scanned from the central part of the substrate toward the peripheral part while discharging the cleaning liquid from the discharge port of the cleaning liquid discharge nozzle, as shown in the plan view of the substrate in FIG. The entire surface of the substrate W is covered with the liquid film 3 of the cleaning liquid, and then the liquid film 3 in the central portion of the substrate W becomes thin and is in a state immediately before drying. And the part (henceforth "the part just before drying") 4 in the state just before drying shown with a dashed-two dotted line spreads outward as shown in (b) of FIG. 4, and immediately before drying. A dry core 5 a is generated in the portion 4. The dry core 5a expands to form a dry region 6a. The dry region 6a extends over the entire surface of the substrate W, and the substrate W is dried. However, when the water repellency of the resist film surface on the substrate is high, a second dry core 5b is generated in the portion 4 immediately before drying in the vicinity of the center of the substrate W, followed by the first dry core 5a. Depending on the case, a new dry core is generated. The dry core does not occur except near the center of the substrate W. Then, as shown in FIG. 4C, the first dry region 6a is enlarged and the second dry core 5b is enlarged to form the second dry region 6b. The drying area 6b also expands.

  As described above, the two dry regions 6a and 6b are enlarged, and as shown in FIG. 4D, the two dry regions 6a and 6b collide with each other, and FIG. As shown in FIG. 4, it eventually becomes one dry region 6c. At this time, cleaning liquid droplets 7 are generated at the boundary between the two drying regions 6a and 6b. Subsequently, as shown in FIG. 4F, the united dry region 6c expands outward, but the cleaning liquid droplet 7 remains as it is. Then, as shown in FIG. 4G, the entire surface of the substrate W is finally dried. However, the remaining cleaning liquid droplets 7 are dried as they are, and the cleaning liquid drying trace (water 7 'remains on the substrate W as it is. As a result, a development defect occurs. It has been found that the above phenomenon is not limited to the case where the substrate after development processing is dried by scan rinsing, but is generally observed for a substrate having a surface with high water repellency.

  In Patent Document 1, an air jet nozzle arranged at a predetermined distance from a cleaning liquid (rinsing liquid) discharge nozzle is integrated with or in synchronization with the cleaning liquid discharge nozzle from the central portion of the substrate toward the peripheral portion. While a method is described in which gas is blown from an air jet nozzle onto a substrate while being moved, and the cleaning liquid remaining on the substrate is dried and removed, in such a method, two or more dry cores are provided near the center of the substrate. It cannot be prevented from occurring. When two dry cores are generated near the center of the substrate, even if gas is blown from the air jet nozzle to the substrate, each dry core expands and the dry region expands, and the two dry regions collide with each other. As a result, it is impossible to eliminate the generation of drying marks of the cleaning liquid that causes development defects.

  The present invention has been made in view of the circumstances as described above. While discharging the cleaning liquid from the discharge port of the discharge nozzle onto the surface of the substrate, the discharge port is scanned from the center to the peripheral portion of the substrate. Substrate processing that prevents the occurrence of development defects and the like by preventing the generation of two or more dry cores near the center of the substrate when a dry region is formed on the substrate during spin drying It is an object of the present invention to provide a method and a substrate processing apparatus capable of suitably performing the method.

  According to the first aspect of the present invention, the substrate is held in a horizontal posture and rotated around the vertical axis, and the discharge port of the discharge nozzle is set to the center of the substrate while discharging the cleaning liquid from the discharge port of the discharge nozzle to the surface of the substrate. In the substrate processing method for drying the substrate by scanning from the position facing the substrate to the position facing the periphery of the substrate, the discharge port of the discharge nozzle starts moving from the position facing the center of the substrate toward the periphery of the substrate. And a starting point when a dry region is formed on the substrate in a region inward of the circumference centered on the center position of the substrate and having a radius to a position on the substrate surface facing the discharge port of the discharge nozzle. After the first dry core is generated and before the second dry core is generated, the gas discharge nozzle is ejected from the outlet of the gas to the center surface of the substrate on which the first dry core is generated. Blowing gas toward And wherein the Rukoto.

The invention according to claim 2 is the substrate processing method according to claim 1, wherein one drying region starts from the first drying core toward the center surface of the substrate from the outlet of the gas ejection nozzle. There wherein the blowing gas body momentarily as once formed.

The invention according to claim 3 is the substrate processing method according to claim 1, wherein one drying region starts from the first drying core toward the center surface of the substrate from the outlet of the gas ejection nozzle. There the drying area is formed, characterized in that the blowing air body continuously as will spread outward.

  According to a fourth aspect of the present invention, in the substrate processing method according to any one of the first to third aspects, scanning is performed from a position where the discharge port of the discharge nozzle faces the center of the substrate to a position where the discharge port faces the peripheral edge of the substrate. In the process, the rotation speed of the substrate is reduced.

  According to a fifth aspect of the present invention, there is provided a substrate holding means for holding the substrate in a horizontal posture, a substrate rotating means for rotating the substrate held by the substrate holding means about a vertical axis, and the substrate held by the substrate holding means. A discharge nozzle that discharges the cleaning liquid from the discharge port to the surface of the substrate rotated by the rotating unit, a cleaning liquid supply unit that supplies the cleaning liquid to the discharge nozzle, and a discharge port of the discharge nozzle from the discharge port to the surface of the substrate In a substrate processing apparatus provided with a nozzle moving means that scans from a position facing the center of the substrate to a position facing the periphery of the substrate while discharging the cleaning liquid, a state in which the ejection port stops at a position facing the center of the substrate And a gas ejection nozzle that blows gas toward the center surface of the substrate from the ejection port, and a gas supply means for supplying gas to the gas ejection nozzle Immediately after the discharge port of the discharge nozzle starts moving from the position facing the center of the substrate toward the periphery of the substrate, a first drying core serving as a starting point when a dry region is formed on the substrate is provided. After the generation, before the second dry core is generated, the gas is blown from the outlet of the gas ejection nozzle toward the center surface of the substrate where the first dry core is generated. And a control means for controlling the gas supply means.

According to a sixth aspect of the present invention, in the substrate processing apparatus according to the fifth aspect, the control means starts the first dry core from the ejection port of the gas ejection nozzle toward the center surface of the substrate. and controlling the gas supply means to blow the air body momentarily as one drying region is once formed as.

According to a seventh aspect of the present invention, in the substrate processing apparatus according to the fifth aspect, the control means starts the first dry core from the ejection port of the gas ejection nozzle toward the center surface of the substrate. the dry region one drying region is formed and controls the gas supply means to blow the air body continuously as will spread outwardly as.

  According to an eighth aspect of the present invention, in the substrate processing apparatus according to any one of the fifth to seventh aspects, the discharge port of the discharge nozzle is moved from the position facing the center of the substrate to the periphery of the substrate by the nozzle moving means. It is further characterized by further comprising a control means for controlling the substrate rotating means so as to reduce the rotation speed of the substrate in the process of scanning to the facing position.

  According to the substrate processing method of the first aspect of the present invention, after the discharge port of the discharge nozzle starts moving from the position facing the center of the substrate toward the peripheral edge of the substrate, the first in the vicinity of the center of the substrate. After the dry core is generated, before the second dry core is generated, gas is blown from the outlet of the gas jet nozzle toward the center surface of the substrate where the first dry core is generated. It is done. As a result, one dry region is forcibly and quickly formed starting from the first dry core, without any gaps in which the second dry core is generated. The whole surface of the substrate is dried. In this way, one drying region starting from a single dry core generated near the center of the substrate spreads over the entire surface of the substrate to dry the substrate, and two or more dry cores are located near the center of the substrate. Since it does not occur, the drying trace of the cleaning liquid does not remain on the substrate. These operations will be described in more detail with reference to FIG. 3 showing a plan view of the substrate.

  While discharging the cleaning liquid from the discharge port of the cleaning liquid discharge nozzle denoted by reference numeral 1, the discharge nozzle 1 is moved from the central portion to the peripheral portion of the substrate W, and a short time has elapsed since the discharge nozzle 1 started moving. Then, when the discharge nozzle 1 moves to a predetermined position, a gas is blown from the jet port of the gas jet nozzle 2 toward the center surface of the substrate W as shown in FIG. At this time, as shown in FIG. 3A, the entire surface of the substrate W is initially covered with the liquid film 3 of the cleaning liquid, but the liquid film 3 near the center of the substrate W becomes thin and is in a state immediately before drying. Subsequently, one dry core 5 is generated in the portion 4 immediately before drying indicated by a two-dot chain line. And after the 1st dry core 5 generate | occur | produces, gas is sprayed toward the center part surface of the board | substrate W from the jet nozzle of the gas jet nozzle 2 at the timing before the 2nd dry core generate | occur | produces. Thus, as shown in FIG. 3B, the first dry core 5 is enlarged and the dry region 6 is formed without generating the second dry core near the center of the substrate W. At this time, the cleaning liquid is discharged from the discharge port of the discharge nozzle 1 on the outer side of the circumference having the radius from the center position of the substrate W to the position on the substrate surface facing the discharge port of the discharge nozzle 1 as a radius. Since it is continued, the liquid film 3 is maintained. Then, as the discharge nozzle 1 moves toward the peripheral edge of the substrate W, as shown in FIGS. 3C and 3D, one dry region 6 expands outward, and FIG. As shown in FIG. 5E, the drying region 6 extends over the entire surface of the substrate W, and the substrate W is dried.

  In this substrate processing method, two or more dry cores are generated near the center of the substrate, and two or more dry regions do not collide and join with each other. It will not remain. Therefore, according to the substrate processing method of the first aspect of the present invention, the occurrence of development defects and the like can be eliminated.

The substrate processing method of the invention according to claim 2, by toward the ejection port of the gas ejection nozzle at the center surface of the substrate air body is blown instantaneously, near the center of the substrate, first dry core A dry region is formed all at once from the starting point.

The substrate processing method of the invention according to claim 3, by vapor body toward the center surface of the substrate from the ejection port of the gas ejection nozzle is sprayed continuously, near the center of the substrate, first dry core As a starting point, one dry region is formed, and the dry region expands outward .

  In the substrate processing method of the invention according to claim 4, the rotational speed of the substrate is reduced in the process of scanning from the position where the discharge port of the discharge nozzle faces the center of the substrate to the position facing the peripheral edge of the substrate, Since the momentum of the cleaning liquid scattered from the substrate surface when the drying area is enlarged on the substrate surface is reduced, the cleaning liquid is prevented from reattaching to the drying area on the substrate surface.

In the substrate processing apparatus according to the fifth aspect of the present invention, immediately after the gas supply means is controlled by the control means and the discharge port of the discharge nozzle starts moving from the position facing the center of the substrate toward the peripheral edge of the substrate. The gas is blown from the jet port of the gas jet nozzle toward the center surface of the substrate where the first dry core is generated. Thus, while there is no gap in which the second dry core is generated, one dry region is forcibly and rapidly formed starting from the first dry core, and the one dry region is directed outward. It spreads and the whole surface of the substrate is dried. In this way, one drying region starting from a single dry core generated near the center of the substrate spreads over the entire surface of the substrate to dry the substrate, and two or more dry cores are located near the center of the substrate. Since it does not occur, the drying trace of the cleaning liquid does not remain on the substrate.
Therefore, when the substrate processing apparatus according to the fifth aspect of the present invention is used, the substrate processing method according to the first aspect of the present invention can be suitably implemented to achieve the above-described effects.

In the substrate processing apparatus of the invention according to claim 6, the gas supply means is controlled by the control means, the gas body toward the center surface of the substrate from the ejection port of the gas ejection nozzle is sprayed instantaneously. Thereby, one dry region is formed at a stretch near the center of the substrate, starting from the first dry core. Therefore, when the substrate processing apparatus of the invention according to claim 6 is used, the substrate processing method of the invention according to claim 2 can be suitably implemented to achieve the above-described effects.

In the substrate processing apparatus of the invention according to claim 7, the gas supply means is controlled by the control means, the gas body is sprayed continuously toward the ejection port of the gas ejection nozzle at the center surface of the substrate. Thereby, one drying region is formed near the center of the substrate, starting from the first drying core, and the drying region expands outward. Therefore, when the substrate processing apparatus of the invention according to claim 7 is used, the substrate processing method of the invention according to claim 3 is suitably implemented, and the above-described effect can be obtained .

  In the substrate processing apparatus according to the eighth aspect of the present invention, the substrate rotating unit is controlled by the control unit, and the discharge port of the discharge nozzle is scanned from the position facing the center of the substrate to the position facing the peripheral edge of the substrate. The rotation speed of the substrate is reduced. This reduces the momentum of the cleaning liquid that scatters from the substrate surface when the drying region is enlarged on the substrate surface. Therefore, when the substrate processing apparatus of the invention according to claim 8 is used, the substrate processing method of the invention of claim 4 can be suitably implemented, and the above-described effects can be obtained.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the best embodiment of the present invention will be described with reference to the drawings.
1 and 2 show an example of the configuration of a substrate processing apparatus used for carrying out the substrate processing method according to the present invention, FIG. 1 is a schematic plan view of the substrate processing apparatus, and FIG. FIG.

  In this substrate processing apparatus, a substrate having an exposed resist film formed on the surface is developed and then subjected to a cleaning process (rinse process). A spin chuck 10 that holds the substrate W in a horizontal position and a spin at an upper end are provided. A rotation support shaft 12 to which the chuck 10 is fixed and supported in the vertical direction, and a rotation motor 14 that is connected to the rotation support shaft 12 and rotates the spin chuck 10 and the rotation support shaft 12 about the vertical axis are provided. . A cup 16 is disposed around the spin chuck 10 so as to surround the substrate W on the spin chuck 10. The cup 16 is supported by a support mechanism (not shown) so as to be reciprocally movable in the vertical direction. A drainage pipe 18 is connected to the bottom of the cup 16. Although not shown in FIGS. 1 and 2, a mechanism for supplying a developer onto the substrate W, for example, a developer discharge nozzle having a slit-like discharge port formed at the lower end surface, Development in which the developer discharge nozzle is linearly moved in the horizontal direction orthogonal to the slit discharge port while supplying the developer onto the substrate W while discharging the developer from the slit discharge port. It has a developer supply nozzle composed of a liquid supply mechanism or a straight nozzle, and the developer discharge nozzle is reciprocated between a discharge position where the discharge port at the front end is located immediately above the center of the substrate W and a standby position. A developer supply mechanism is provided that supports the substrate so as to move, and discharges the developer onto the central portion of the substrate W from the tip discharge port of the developer discharge nozzle.

  Further, near the side of the cup 16, a pure water discharge nozzle 20 that discharges a cleaning liquid (rinsing liquid), for example, pure water, onto the substrate W from a discharge port at the tip is disposed. The pure water discharge nozzle 20 is connected to a pure water supply source through a pure water supply pipe 22, and a pump 24, a filter 26 and an opening / closing control valve 28 are inserted in the pure water supply pipe 22. The pure water discharge nozzle 20 is held by the nozzle holder 30 so as to be rotatable in a horizontal plane, and is rotated in the horizontal plane by a rotation drive mechanism 32. The pure water discharge nozzle 20 discharges pure water from the discharge port at the tip to the surface of the substrate W, and the substrate W from a position where the discharge port faces the center of the substrate W as shown by an arrow a in FIG. Is scanned to a position opposite to the peripheral edge of the substrate W, and as indicated by a two-dot chain line, it reciprocates between a standby position outside the cup 16 and a position where the discharge port is disposed immediately above the center of the substrate W. It has a configuration like this.

  Furthermore, this substrate processing apparatus is a gas that ejects a gas, for example, nitrogen gas, from the tip outlet onto the substrate W on the opposite side of the pure water discharge nozzle 20 across the cup 16 in the vicinity of the side of the cup 16. A jet nozzle 34 is provided. The gas ejection nozzle 34 is connected to a nitrogen gas supply source through a gas supply pipe 36, and an open / close control valve 38 is inserted in the gas supply pipe 36. The gas ejection nozzle 34 is held by the nozzle holder 40 so as to be rotatable in a horizontal plane, and is rotated in the horizontal plane by a rotation drive mechanism 42. The gas ejection nozzle 34 has a standby position deviating from the cup 16 as indicated by a two-dot chain line in FIG. 1 and a position at which the ejection port is disposed immediately above the center of the substrate W as indicated by a solid line. It is the structure which reciprocates between.

  The open / close control valve 38 inserted in the gas supply pipe 36 is connected to a control device 44, and the control device 44 controls the operation of jetting / stopping nitrogen gas from the jet port of the gas jet nozzle 34. The That is, immediately after the pure water discharge nozzle 20 starts to move from the central portion of the substrate W toward the peripheral portion, the discharge port of the pure water discharge nozzle 20 is a slight distance from the position facing the center of the substrate W. When it moves and reaches a predetermined position (a position indicated by a solid line in FIG. 1), nitrogen gas is blown from the jet port of the gas jet nozzle 34 toward the center surface of the substrate W, and then the blow is stopped. In addition, the opening / closing operation of the opening / closing control valve 38 is controlled by the control device 44. More specifically, the pure water discharge nozzle 20 starts to move within a circumference having a radius from the center position of the substrate W to the position on the substrate surface facing the discharge port of the pure water discharge nozzle 20. After the first dry core is generated in this region, before the second dry core is generated, nitrogen gas is blown from the outlet of the gas injection nozzle 34 toward the center surface of the substrate W. Be controlled. When nitrogen gas is blown onto the center surface of the substrate W, a large flow rate of nitrogen gas may be instantaneously ejected from the ejection port of the gas ejection nozzle 34, or a small flow rate of nitrogen gas is continuously ejected. You may make it make it.

  The substrate processing apparatus shown in FIGS. 1 and 2 is used to supply the developing solution onto the exposed resist film formed on the surface of the substrate W to develop the resist film, and then the substrate W is relatively slow. Then, pure water is supplied onto the substrate W while rotating the substrate W to perform cleaning treatment, and the developer is washed away from the resist film on the surface of the substrate W. Thereafter, the substrate W is rotated at a relatively high speed and spin-dried ( Scan rinse). When performing the scan rinse, the substrate W held on the spin chuck 10 is rotated at a relatively high speed by the rotation motor 14 and pure water is discharged from the discharge port of the pure water discharge nozzle 20 onto the substrate W. The water discharge nozzle 20 is scanned, and in the process, nitrogen gas is blown from the ejection port of the gas ejection nozzle 34 toward the center surface of the substrate W.

  More specifically, an example of numerical values will be described. A substrate W having a diameter of 200 mm to 300 mm is rotated at a rotational speed of 1800 rpm to 2100 rpm, and the pure water discharge nozzle 20 is opposed to the center of the substrate W. The pure water discharge nozzle 20 is moved from the discharge port of the pure water discharge nozzle 20 onto the substrate W at a flow rate of 0.4 l / min to 0.6 l / min. Move toward the periphery at a scanning speed of 6 mm to 10 mm. Then, after several seconds have elapsed from the start of movement of the pure water discharge nozzle 20, for example, after 2 seconds have elapsed, therefore, when the discharge port of the pure water discharge nozzle 20 has moved from the center of the substrate W to a distance of 12 mm to 20 mm, As shown by a solid line in FIG. 1, nitrogen gas is supplied from a nitrogen supply source through a gas supply pipe 36 to a gas ejection nozzle 34 whose ejection port is arranged immediately above the center of the substrate W, and from the ejection port of the gas ejection nozzle 34. Nitrogen gas is sprayed toward the center surface of the substrate W. The nitrogen gas is sprayed at a flow rate of about 10 l / min for about 1 second, for example. Alternatively, for example, nitrogen gas is blown for several seconds at a flow rate of about 0.1 l / min. It should be noted that the ejection of nitrogen gas from the ejection port of the gas ejection nozzle 34 may be stopped as soon as the dry region is formed in the central portion of the substrate W, but for a while, the nitrogen gas is ejected from the ejection port of the gas ejection nozzle 34. It is safe to erupt.

  The timing of blowing nitrogen gas to the surface of the central portion of the substrate W is the type, size, surface state, etc. of the substrate W, the rotation speed of the substrate W, the discharge flow rate of pure water from the discharge port of the pure water discharge nozzle 20, Experiments were performed under various conditions such as the scanning speed of the pure water discharge nozzle 20 to observe whether or not the second dry core is generated after the first dry core is generated near the center of the substrate W. Make a decision in advance.

  The pure water discharge nozzle 20 is continuously scanned even when nitrogen gas is being ejected from the ejection port of the gas ejection nozzle 34. Then, the discharge port of the pure water discharge nozzle 20 is scanned to a position facing the peripheral edge of the substrate W. When the discharge port of the pure water discharge nozzle 20 reaches a position facing the peripheral edge of the substrate W, the pure water supply pipe 22 The inserted open / close control valve 28 is closed to stop the supply of pure water to the pure water discharge nozzle 20, stop the discharge of pure water from the pure water discharge nozzle 20, and bring the pure water discharge nozzle 20 to the standby position. Move. Then, when the drying process of the substrate W is completed, the rotation of the substrate W is stopped.

  The timing at which the nitrogen gas is ejected from the ejection port of the gas ejection nozzle 34 or the ejection is stopped may be controlled by a microcomputer based on the operation program. Alternatively, the position of the pure water discharge nozzle 20 is detected by an encoder, and nitrogen gas is ejected from the ejection port of the gas ejection nozzle 34 when the pure water discharge nozzle 20 reaches a predetermined position by the detection signal. Alternatively, when a predetermined time elapses from the scanning start time of the pure water discharge nozzle 20 using a timer, nitrogen gas is ejected from the ejection port of the gas ejection nozzle 34, and when a predetermined time elapses from the ejection time. In this case, the ejection of nitrogen gas may be stopped.

  Note that the rotational speed of the substrate W may be reduced in the process of scanning the discharge port of the pure water discharge nozzle 20 to a position facing the periphery of the substrate W. Specifically, when the discharge port of the pure water discharge nozzle 20 moves by a predetermined distance, for example, when reaching the radial position of 60 mm from the center of the substrate W, the rotation speed of the substrate W is reduced, for example, 1800 rpm to 2100 rpm. Control is performed by a control device (not shown) so as to decelerate from 1000 rpm to 1200 rpm. The number of times of changing the rotation speed of the substrate W is not limited to one, and the rotation speed of the substrate W may be decreased stepwise. Alternatively, the rotation speed of the substrate W may be controlled to gradually decrease, for example, linearly decrease as the discharge port of the pure water discharge nozzle 20 approaches the position facing the periphery of the substrate W.

  When the scan rinse is performed by the method as described above, it is possible to prevent two or more dry cores from being generated near the center of the substrate W. Then, since one dry region starting from a dry core generated only in the vicinity of the center of the substrate W extends over the entire surface of the substrate W, the substrate W is dried. It does n’t happen. Therefore, according to the method described above, development defects and the like can be eliminated.

  In the above-described embodiment, the case where the present invention is applied to the process of performing the scan rinse after the development of the resist film after the exposure formed on the substrate has been described. Not only when the substrate is dried by scan rinsing, but also when a substrate having a surface with high water repellency is subjected to a scan rinse treatment, for example, when the surface of the substrate is washed with a cleaning liquid (scrubber treatment) or after immersion exposure Can be widely applied to general cases such as washing and drying.

It is a schematic plan view which shows an example of a structure of the substrate processing apparatus used in order to implement the substrate processing method concerning this invention. It is a schematic sectional drawing of the substrate processing apparatus shown in FIG. It is a figure for demonstrating the operation | movement in the substrate processing method which concerns on this invention, Comprising: It is a top view which shows a board | substrate. It is a figure for demonstrating the problem in the conventional scan rinse method, Comprising: It is a top view which shows a board | substrate.

DESCRIPTION OF SYMBOLS 10 Spin chuck 12 Rotation spindle 14 Rotation motor 16 Cup 20 Pure water discharge nozzle 22 Pure water supply pipe 24 Pump 28, 38 Opening and closing control valve 30 Nozzle holding part of pure water discharge nozzle 32 Rotation drive mechanism of pure water discharge nozzle 34 Gas Jet nozzle 36 Gas supply pipe 40 Nozzle holding part of gas jet nozzle 42 Rotation drive mechanism of gas jet nozzle 44 Controller W substrate

Claims (8)

While rotating the substrate around a vertical axis while holding the substrate in a horizontal position, while discharging the cleaning liquid from the discharge port of the discharge nozzle to the surface of the substrate, the peripheral edge of the substrate from the position where the discharge port of the discharge nozzle faces the center of the substrate In the substrate processing method of scanning to a position facing the substrate and drying the substrate,
The distance from the position where the discharge port of the discharge nozzle opposes the center of the substrate toward the peripheral edge of the substrate, and the distance from the center position of the substrate to the position on the substrate surface facing the discharge port of the discharge nozzle In the inner area of the circumference with the radius of, the gas is blown out after the first dry core is generated as the starting point when the dry area is formed on the substrate and before the second dry core is generated. A substrate processing method, comprising: blowing a gas from a nozzle outlet toward a center surface of a substrate on which the first dry core is generated. Toward the center surface from the ejection port substrate of the gas ejection nozzle, the first one drying area dry core starting blows air body momentarily as once formed claim 1 Substrate processing method. Toward the center surface from the ejection port substrate of the gas ejection nozzle, the first one drying area dry core as a starting point is formed the dry region is going way air body extends outwardly The substrate processing method of Claim 1 sprayed continuously. The substrate according to any one of claims 1 to 3, wherein the rotation speed of the substrate is reduced in a process in which the discharge port of the discharge nozzle is scanned from a position facing the center of the substrate to a position facing the peripheral edge of the substrate. Processing method. Substrate holding means for holding the substrate in a horizontal position;
Substrate rotating means for rotating the substrate held by the substrate holding means around a vertical axis;
A discharge nozzle that discharges the cleaning liquid from a discharge port to the surface of the substrate held by the substrate holding unit and rotated by the substrate rotating unit;
Cleaning liquid supply means for supplying a cleaning liquid to the discharge nozzle;
A nozzle moving means for scanning the discharge port of the discharge nozzle from a position facing the center of the substrate to a position facing the peripheral edge of the substrate while discharging a cleaning liquid from the discharge port to the surface of the substrate;
In a substrate processing apparatus comprising:
A gas ejection nozzle that blows gas from the ejection port toward the center surface of the substrate in a state where the ejection port is stopped at a position facing the center of the substrate;
Gas supply means for supplying gas to the gas ejection nozzle;
Immediately after the discharge port of the discharge nozzle starts moving from the position facing the center of the substrate toward the periphery of the substrate, a first drying core serving as a starting point when a dry region is formed on the substrate is provided. After the generation, before the second dry core is generated, the gas is blown from the outlet of the gas ejection nozzle toward the center surface of the substrate where the first dry core is generated. Control means for controlling the gas supply means;
A substrate processing apparatus further comprising: The control means, toward the ejection port of the gas ejection nozzle at the center surface of the substrate, spraying the so care body momentarily as one drying area first dry core starting is once formed The substrate processing apparatus according to claim 5, wherein the gas supply unit is controlled as described above. The control means forms one drying region from the outlet of the gas ejection nozzle toward the center surface of the substrate, starting from the first drying core, and the drying region expands outward. the substrate processing apparatus according to claim 5 for controlling the gas supply means to blow the air body continuously as. The substrate rotating means is controlled so as to reduce the rotation speed of the substrate in a process in which the nozzle moving means scans the discharge port of the discharge nozzle from the position facing the center of the substrate to the position facing the peripheral edge of the substrate. 8. The substrate processing apparatus according to claim 5, further comprising a control unit that performs the control.

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