JP4934954B2 - Heat sink and semiconductor device provided with heat sink - Google Patents

Description

  The present invention relates to a heat sink used for radiating heat from a heating element such as a semiconductor light emitting element, a semiconductor light receiving element, or a semiconductor device, and a semiconductor device including the heat sink.

  General cooling means in a heat sink used for heat dissipation of a heating element such as the semiconductor device can be divided into passive cooling means and active cooling means. For example, the former uses a heat sink having a large heat capacity to dissipate heat from the heat generating element, and the latter is a means for removing heat by flowing cooling water into the heat sink on which the heat generating element is mounted. In recent years, the use of active cooling means capable of efficient cooling is favored in semiconductor devices that require higher output and higher brightness.

  As a semiconductor device using the passive cooling means, for example, an optical output of 1 to several tens of watts (W) is obtained with a semiconductor laser array in an infrared band. Here, the semiconductor laser array indicates an array in which a plurality of resonators are arranged on a single semiconductor crystal, or an array in which resonators are arranged on a plurality of separated semiconductor crystals. .

  Further, by making the semiconductor laser array into a stack structure, an optical output of several tens to several kilowatts (W) is obtained. The cooling means used in the semiconductor device having such a stack structure is the active cooling means. For example, a technique has been proposed in which a water channel is provided in a heat sink to cool a portion directly below the semiconductor laser array. In the water channel, a plurality of fine holes are provided which narrow the water channel so that pressurized fluid is sprayed directly under the heating element. Heat transfer efficiency is improved by spraying fluid from the fine holes directly under the semiconductor laser array (Patent Document 1).

  In the structure of the semiconductor device, the water channel is designed so that the fluid is substantially perpendicular to the heat radiating surface of a heating element such as a semiconductor laser.

Japanese Patent Laid-Open No. 8-139479

  The semiconductor laser or the like shown as an example of the active cooling method has an extremely low frictional resistance on the inner wall surface of the heat sink by designing a water channel so that the fluid (cooling medium) is substantially perpendicular to the heat radiating surface of the heating element. Characterized by the small size. That is, a kind of film that causes frictional resistance is formed at the portion where the fluid (cooling medium) and the heat radiating surface are in contact with each other. By blowing the cooling water from the direction perpendicular to the film surface, It destroys the film and improves the cooling efficiency efficiently.

  However, surface emitting devices such as LEDs and surface emitting lasers exhibit their functions by being mounted in a matrix. That is, if a high output light emitting device is to be produced by combining a plurality of surface emitting devices such as LEDs and surface emitting lasers, it is necessary to mount a plurality of surface emitting devices in a matrix. Since each of these surface light emitting devices is a heating element, it is necessary to cool each surface light emitting device with high efficiency. However, when the water channel structure is applied, there are only a limited number of parts to which fluid (cooling medium) is sprayed from the direction perpendicular to the heat radiating surface. However, there is a problem that the high-density mounting of the surface light emitting device is hindered.

  In view of the above problems, an object of the present invention is to provide a heat sink having a sufficient cooling function and a semiconductor device including such a heat sink.

  In the present invention, one or more heating elements are mounted on a surface parallel to the direction in which the heat radiation surface and the fluid (cooling medium) flow or in the direction in which the fluid (cooling medium) flows. It is an object of the present invention to provide a heat sink having a sufficient cooling function even in cases, and a semiconductor device provided with such a heat sink.

  The heat sink of the present invention has a first plate-like member having a first surface to which a heating element is thermally connected, and a second plate-like shape connected to the second surface of the first plate-like member. In a heat sink comprising a laminated plate-like member comprising a member and a supply port through which fluid is supplied and a discharge port through which the fluid is discharged, the second plate of the first plate member is provided. The surface has irregularities.

  By providing irregularities on the second surface of the first plate member, the surface area through which fluid flows in the same region can be increased. That is, the convex part formed in the 2nd surface of the 1st plate-shaped member comes to play a role like a radiation fin. Further, the fluid travels not only in a straight line because it travels on a surface having a step, but also travels while changing the traveling direction and traveling speed. Therefore, the heat from the heating element can be efficiently cooled. Moreover, even when the diameter of the supply port is reduced in order to give priority to thinning and downsizing of the heat sink, it has a sufficient cooling function.

  Here, the fact that the first plate-like member is connected to the heating element is not limited to the one that is in direct contact, and may be connected thermally. That is, it is sufficient that a heat transport path is formed between the first plate-like member and the heating element. For example, a configuration in which a eutectic material is interposed in one layer or multiple layers may be employed. The fluid is a cooling medium such as pure water or a low melting point liquid.

  In the heat sink of the present invention, it is preferable that the unevenness is formed in a region facing the connection region of the heating element. As a result, the heat dissipation area in contact with the fluid can be increased, for example, by a factor of two or more, and the heat density (heat flow density) on the second surface can be lowered, so that cooling can be performed efficiently.

  In the heat sink of the present invention, it is preferable that the unevenness formed on the second surface of the first plate member has a step of 10 μm or more and 500 μm or less. The concavo-convex structure is formed by chemical etching or the like at the same time as forming the water channel in the plate-like member, but is preferably 10 μm or more for convenience of processing accuracy. In addition, since the amount cut out by etching determines the flow rate of the fluid, if the above range is higher than 500 μm, there will be a fluid that does not substantially contribute to cooling, and in order to circulate the excess fluid, Is unnecessarily efficient. Therefore, the step is preferably 500 μm or less.

  More preferably, the uneven step is 100 μm or more and 300 μm or less. By forming the step in this range, the heat sink can be cooled more efficiently.

Further, the heat sink of the present invention includes a first plate member having a first surface to which the heating element is thermally connected, and a second plate connected to the second surface of the first plate member. In the heat sink having a supply port through which fluid is supplied to a laminated plate member made of a plate member, and a discharge port through which fluid is discharged, the first plate member is The surface area (b) of the second surface facing the contact area of the heating element is larger than the contact area (a) of the heating element on the first surface. In the heat transport radiated from the heat radiating surface, the present inventor has a temperature distribution in which heat from the heating element is transmitted to the second surface of the first plate member while spreading in the heat sink at an angle of 45 ° in the thickness direction. Have confirmed. For this reason, when a surface light emitting device or the like, which is a heating element, is mounted at a high density, the heat generated from the adjacent heating elements overlaps while transferring in the thickness direction of the first plate-like member, causing thermal interference, and locally A big heat will be generated. Therefore, when a surface light emitting device or the like, which is a heating element, is mounted with high density, the input power that can be supplied to each surface light emitting device is limited to a low level. However, according to the present invention, in such a high-density mounted semiconductor device, the allowable input power can be remarkably increased by securing the heat dissipation surface as described above. Here, the input power is the product of the amount of current passed through a semiconductor element such as a surface light emitting device and the applied voltage, and a value obtained by dividing the input power by the projected area of the element is referred to as heat density. According to the present invention, it is possible to allow the input power to have a heat density of 2 W / mm ² or more, for example. The high-density mounting is a mounting form in which the interval between the heating elements is narrower than the width of the heating elements, and the number of the heating elements is three or more.

  Further, the ratio of the contact area (a) of the heating element on the first surface of the heat sink of the present invention to the surface area (b) of the second surface facing the contact area of the heating element on the second surface is: It is preferable that 0.2 ≦ (a / b) <1. More preferably, the range is 0.2 ≦ (a / b) <0.5. If the surface area (b) on the second surface is larger than five times the contact area (a) of the heating element on the first surface, considerable processing accuracy is required. However, if it is the said range, cooling efficiency can be improved more.

  Further, it is preferable that the first surface of the first plate-like member and the heating element are connected via a eutectic material. As a result, the heating element and the plate-like member can be bonded together at a low temperature that does not cause thermal damage to the heating element. Moreover, the fine processing with respect to a plate-shaped member can be easily hold | maintained, not only can a thermal deformation be suppressed, but thickness reduction can be implement | achieved easily and thermal resistance can be reduced.

  The second surface of the first plate member and the second plate member are preferably connected via a eutectic material. By using a eutectic material as an adhesive member for bonding the plate members, the plate members can be bonded at a relatively low temperature. Fine processing on the plate-like member can be easily held, thinning can be easily realized, and thermal resistance can be reduced.

  According to another aspect of the present invention, there is provided a semiconductor device comprising the heat sink and a heating element made of a semiconductor. By using such a heat sink, it becomes possible to prevent thermal deterioration of element characteristics of the heating element, and a semiconductor device having excellent reliability can be provided.

  It is preferable that one or more semiconductor devices of the present invention are mounted on the first surface of the first plate member. The unevenness formed on the second surface of the first plate-like member decreases the heat density on the second surface. Therefore, it is possible to suppress a decrease in light output due to self-heating of the heating element, and a plurality of heating elements can be mounted at high density.

  In the light emitting device of the present invention, it is preferable that the heating element is a semiconductor light emitting element. Semiconductor light-emitting elements are sensitive to thermal characteristics, so that deterioration due to heat is significant. In particular, semiconductor lasers (LD) and LEDs generate a large amount of heat. However, high-density mounting and high output can be realized by mounting the heat sink of the present invention. Of the semiconductor light emitting elements, the nitride semiconductor light emitting element generates a large amount of heat, so that it is particularly effective to mount the heat sink of the present invention.

  In the heat sink of the present invention, in the step of bonding the plate-shaped members, an adhesive member is formed on the surface side of one plate-shaped member, and a metal film is formed on the bonding surface of the other plate-shaped member. Can be pasted together. By forming the metal film as well as the adhesive member, the wettability of the adhesive member can be improved, and the reliability of the leakage of the coolant can be further improved by improving the adhesion between the plate-like members.

  In the heat sink of the present invention, the eutectic material is an adhesive material containing at least one selected from the group consisting of AuSn, AuSi, SnAgBi, SnAgCu, SnAgBiCu, SnCu, SnBi, PbSn, and In. To do. These adhesive materials are preferable from the viewpoint of wettability and adhesion. As a manufacturing method of the heat sink of the present invention, it is preferable that the eutectic material bonding temperature is 500 ° C. or less. The heat distortion is remarkably improved by manufacturing the heat sink in this temperature range.

  According to the configuration of the present invention, for example, it is possible to mount 10 or more LEDs made of nitride semiconductor on a heat sink at a high density, and further, a watt light source that continuously emits light by CW driving can be obtained. Further, by mounting one or more high-power surface emitting semiconductor lasers on the heat sink of the present invention, a small watt light source that continuously oscillates with CW drive can be obtained even with a nitride semiconductor laser having a large heat quantity. In addition, the heat sink of the present invention makes it possible to arrange a plurality of watt light sources each having one or more semiconductor light emitting elements mounted thereon, thereby obtaining a light source with higher output.

  The heat sink of the present invention is particularly effective for a surface emitting semiconductor laser and a high-intensity LED, but can also be used as a heat sink applicable to any semiconductor device that generates heat.

DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.
FIG. 1 is a schematic cross-sectional view showing a semiconductor device provided with a heat sink of the present invention. The semiconductor device of FIG. 1 has a heat sink composed of a first plate-like member 2 and a second plate-like member 3, and an LED chip 1 that is a heating element is placed on the first plate-like member 2. Implemented. Between the first plate-like member 2 and the second plate-like member 3, a flow path 12 for flowing a cooling fluid is formed. The second plate-like member 3 includes a fluid supply port 36a and a discharge port 36b. An insulating member 4 is formed on the upper surface of the first plate-like member 2 except for the mounting region of the LED chip 1, and a metal member 5 is formed on the insulating member 4. The first plate member 2 and the metal member 5 are electrically insulated by the insulating member 4. The LED chip 1 that is a heating element has an n-side electrode formed on the upper surface thereof connected to the metal member 5 by a wire. On the other hand, the p-side electrode of the LED chip 1 is formed on the bottom surface of the LED chip 1 and is connected to the first plate-like member 2. On the metal member 5, a metal cap welding member 6 is further formed so as to be electrically connected. The first plate member 2 and the second plate member 3 are also electrically connected. The power source 8 is connected to the cap welding member 6 and the second plate member 3. As an electrical connection path, the first plate member 2 and the metal member 5 are connected via the heating element 1. That is, the second plate-like member 3 and the first plate-like member 2 serve as a lead for passing a current to the p-side electrode of the LED chip 1, and the metal cap welding member 6 and the metal member 5 are connected to the LED. It plays the role of a lead for passing a current to the n-side electrode of the chip 1. The cap welding member 6 on the metal member 5 is further formed with a cap 7 that is a cover for protecting the LED chip 1. A window portion is formed in the cap 7 so that light emission of the LED chip 1 can be observed, and a translucent window member 9 is fitted therein.

  FIG. 2 is a perspective view schematically showing the structure of the semiconductor device shown in FIG. In addition, the metal member 5, the cap welding member 6, and the cap 7 are abbreviate | omitted for the simplicity of drawing. As shown in FIG. 2, an insulating member 4 having a circular window portion is formed on the first plate-like member 2, and the first plate-like member 2 is exposed from the circular window portion 4a. ing. The inside of the circular window 4a is a mounting area for the LED chip 1, and a plurality (21 in FIG. 2) of LED chips 1 are arranged in a square matrix in the window 4a. The square matrix shape refers to a state in which individual LED chips are arranged in a grid pattern, and the entire arrangement may not be rectangular. According to the present embodiment, since a high cooling efficiency can be realized by the water cooling structure described below, the LED chip 1 that is a heating element can be a high-density mounting in which the distance 11 between the LED chips is limited. .

  FIG. 3 is a cross-sectional view schematically showing the configuration of the heat sink of the semiconductor device according to the present embodiment. In the drawing, individual members are shown separately for convenience. The heat sink is constituted by a first plate member 2 and a second plate member 3. The first plate member 2 has a first surface 21 and a second surface 22, and the second plate member 3 has a first surface 31 and a second surface 32. Yes. The LED chip 1 that is a heating element is mounted on the first surface 21 of the first plate-like member 2. The second surface 22 of the first plate-like member 2 and the first surface 31 of the second plate-like member 3 are opposed to each other, and the portion sandwiched between these two surfaces flows the cooling fluid. It becomes a road. As shown in a partially enlarged view in FIG. 3, a plurality of convex portions 25 are formed on the second surface 22 of the first plate-like member 2. The convex portion 25 increases the contact area between the cooling fluid and the first plate-like member 2, and the heat transferred from the LED chip 1 to the first plate-like member 2 is efficiently dissipated. Moreover, the convex part 25 formed in the 1st plate-shaped member 2 plays the role which changes the advancing direction and advancing speed of the cooling fluid, and also heat dissipation efficiency improves by this. The plate member constituting the heat sink is preferably a member having good thermal conductivity. Preferably, it is a copper-based thin plate material using copper (Cu) as a base material. Most preferred is oxygen-free copper. As will be described later, if the plate members are joined to each other with a eutectic material, the degree of freedom in selecting the material of the plate members is increased. In particular, if the entire bonding surface of the plate-like member is covered with a metal material containing gold and at least one of the metal materials containing gold is a eutectic material having a low melting point (for example, a melting point of 500 ° C. or less), corrosion on the coolant is caused. Since there is no need to consider the property, the degree of freedom in selecting the material for the plate-like member is further increased. Therefore, it is possible to use a material having substantially the same thermal expansion coefficient as the substrate material of the semiconductor element mounted thereon as the material of the plate-like member (particularly the first plate-like member), thereby mounting the semiconductor element. Sometimes, strain applied to the semiconductor element can be reduced. For example, when the semiconductor element is formed on a support substrate made of CuW or the like, the first plate member is made of the same CuW, and the bonding surface (= second surface) is a metal containing gold. It may be covered with a material (Au, AuSn, AuSi, or a laminate thereof).

  As a result of the convex portions 25 being formed on the second surface 22 of the first plate-like member 2, a concave / convex pattern is formed. In the present embodiment, the case where the convex portion 25 is circular (that is, cylindrical) in plan view will be described as an example. However, the uneven pattern shape may be a stripe shape, a rectangular shape, a stripe shape, a lattice shape, or the like. good. The unevenness formed on the second surface 22 of the first plate-like member 2 has a step of preferably 10 μm or more and 500 μm or less, more preferably 100 μm or more and 300 μm or less.

  In the heat sink of the present invention, the contact area (a) of the heating element on the first surface of the first plate member and the surface area (second surface) of the second surface facing the contact area of the heating element on the second surface ( The ratio to b) is preferably 0.2 ≦ (a / b) <1, and more preferably 0.2 ≦ (a / b) <0.5. In order to obtain a heat sink that satisfies this condition, it is only necessary to form irregularities on the second surface 22 of the first plate-like member 2. The chip size of the LED chip 1 that is a heating element is about □ 100 μm to □ 10 mm. Therefore, when the unevenness is formed on the second surface facing the first surface on which a plurality of such heating elements 1 are formed, the size of the concave portion and / or the convex portion formed on the second surface is the width. Is preferably 10 μm or more and 1000 μm or less.

  A preferred form of the first plate member 2 and the second plate member 3 will be described with reference to FIGS. 4A to 4C show a preferable form of the first plate-like member 2, and FIGS. 5A to 5C show a preferable form of the second plate-like member 3. Moreover, Fig.6 (a) and (b) show the state which combined the plate-shaped member shown to FIG. 4 and FIG.

  First, the preferable form of the 1st plate-shaped member 2 is demonstrated. As shown in FIGS. 4A to 4C, a circular recess 24 for forming a flow path for the cooling fluid is formed at the approximate center of the second surface 22 of the first plate-like member 2. Yes. In the present embodiment, the depth of the circular recess 24 matches the height of the flow path through which the cooling fluid flows. Therefore, the depth of the circular recess 24 is preferably 10 μm or more and 500 μm or less, more preferably 100 μm or more and 300 μm or less. This is because if the height of the flow path is too low, not only is the processing difficult, but also the resistance when cooling water flows through the flow path increases, and conversely, if the height of the flow path is too high, This is because the cooling fluid flows also at a position far from the bottom surface of the recess 24, which is a heat radiating surface, and the fluid that does not contribute to cooling is excessively circulated.

  Further, on the bottom surface of the circular concave portion 24, convex portions 25 serving as heat radiating fins are regularly arranged. It is preferable that the height of each convex portion 25 is the same as or lower than the depth of the circular concave portion 24. In the present embodiment, the height of the convex portion 25 is the same as the depth of the circular concave portion 24 (= the height of the flow path). If it carries out like this, when the 1st plate-shaped member 2 and the 2nd plate-shaped member 3 are bonded together, the convex part 25 will play the role as a support | pillar, and the mechanical strength of a heat sink will improve. In that case, if the upper surface of the convex part 25 is joined with the surface of the 2nd plate-shaped member 3, the joining area of the 1st plate-shaped member 2 and the 2nd plate-shaped member 3 will increase, and the mechanical strength of a heat sink will be increased. Further improvement. On the other hand, if the height of the convex portion 25 is made lower than the depth of the circular concave portion 24 (= the height of the flow path), the upper surface of the convex portion 25 will also come into contact with the cooling fluid, improving the heat dissipation efficiency. To do. It is also possible to form the convex portion 25 on the first surface 31 of the second plate-like member 3 and to bond the upper surface of the convex portion 25 to the second surface 22 of the first plate-like member 2. . In that case, since the convex portion 25 is thermally and mechanically integrated with the second surface 22 of the first plate-like member 2, the convex portion is formed on the second surface 22 of the first plate-like member 2. Can be seen. Screw holes 23 are formed in the four corners of the first plate-like member 2.

  Next, the preferable form of the 2nd plate-shaped member 3 is demonstrated. As shown in FIGS. 5A to 5C, the second plate-like member 3 has a supply port 36a that is a through hole for supplying fluid and a discharge port 36b that is a through hole for discharging fluid. Is formed. Further, the first surface 31 of the second plate-shaped member is formed with a fan-shaped concave portion 34a that extends in a substantially fan shape from the supply port 36a toward the center of the second plate-shaped member 3, so that the cooling fluid can be supplied. A guide portion that leads from the supply port 36a to the inlet of the flow path is configured. The peripheral edge 37a near the center of the plate-like member of the fan-shaped recess 34a has an arc shape, and constitutes the inlet of the flow path together with the peripheral edge 24a of the circular recess 24 shown in FIG. A plurality of support pillars 35a are formed on the bottom surface of the fan-shaped recess 34a. The support pillars 35a are arranged radially so as to coincide with the direction in which the fluid flows. Further, the support column 35a has a height such that the upper surface thereof is flush with the first surface 31 of the second plate member, and the first plate member 2 and the second plate member 3 have the same height. It becomes a joint surface when bonding. By forming such a support column 35a, the mechanical strength of the heat sink is improved, and the cooling fluid can easily flow uniformly in the entire flow path.

  The discharge port 36b has a similar structure. That is, a fan-shaped recess 34b is formed that extends in a fan shape from the discharge port 36b toward the center of the plate-like member, and constitutes an introduction guide portion that guides the cooling fluid from the outlet of the flow path to the discharge port 36b. The peripheral edge 37b near the center of the plate-like member of the fan-shaped recess 34b has an arc shape, and constitutes the outlet of the flow path together with the peripheral edge 24b of the circular recess 24 shown in FIG. A plurality of support pillars 35b are formed on the bottom surface of the fan-shaped recess 34b. In addition, screw holes 33 are formed at the four corners of the second plate-like member 3, and the plate-like members are made to coincide with the screw holes 23 provided at the four corners of the second plate-like member 2. It is possible to align.

  When these 1st plate-shaped members 2 and 2nd plate-shaped members 3 are combined, it will become a form as shown to Fig.6 (a) and (b). As shown in FIGS. 6A and 6B, the circular recess 24 formed in the second surface 22 of the first plate-like member 2 is in contact with the first surface 31 of the second plate-like member. A circular cooling channel is formed between them. The inlet 13 of the circular cooling flow path has an arc-shaped peripheral edge 37a of the fan-shaped recess 34a formed in the second plate-like member 3 and a peripheral edge 24a of the circular recess 24 of the first plate-like member 2. And has an arc shape. Similarly, the outlet 14 of the circular cooling flow path includes the arc-shaped peripheral edge 37b of the fan-shaped concave portion 34b formed in the second plate-shaped member 3 and the peripheral edge of the circular concave portion 24 of the first plate-shaped member 2. It is formed between the portions 24b and has an arc shape. Naturally, the arc-shaped peripheral edge portion 37 a or 37 b is formed so as to be located inside the peripheral edge portion 24 a or 24 b of the circular recess 24 of the first plate-like member 2. Further, the fan-shaped recess 34a formed in the second plate-shaped member 3 guides the cooling fluid from the supply port 36a to the inlet 13 of the flow path between the fan-shaped recess 34a and the second surface 32 of the first plate-shaped member. Form a guide. Similarly, the fan-shaped recess 34b formed in the second plate-like member 3 allows the cooling fluid to flow from the outlet 14 of the flow path to the discharge port 36b between the second surface 22 of the first plate-like member. Form a guiding guide.

  In the heat sink shown in FIG. 6, the flow of the cooling fluid is as follows. First, the cooling fluid introduced from the supply port 36a flows toward the center of the heat sink while spreading along the guide formed by the fan-shaped recess 34a. Then, when reaching the peripheral edge 37 a of the fan-shaped recess 34 a, it flows into the inlet 13 of the flow path formed by the peripheral edge 37 a of the fan-shaped recess 34 a and the peripheral edge 24 a of the circular recess 24. Here, since the inlet 13 of the flow path has an arc shape, a part of the flow toward the center of the heat sink enters the flow path while going around the periphery of the heat sink. Therefore, the cooling fluid can easily flow uniformly in the entire flow path, and the water pressure distribution of the cooling fluid can easily form a contour line perpendicular to the fluid flow. Therefore, a uniform cooling effect can be obtained over the entire flow path having a planar spread, and variation in characteristics due to heat of the mounted LED chip 1 can be suppressed.

  Then, the fluid flowing in from the inlet 13 of the cooling channel is directed to the outlet 14 of the channel while repeatedly detouring in an S shape by the convex portion 25. That is, the convex portions 25 are arranged so as to be shifted from each other so that the line segments sequentially connecting the convex portions 25 that are closest to the center of the outlet 14 toward the center of the outlet 14 are repeatedly bent. The fluid that collides with the portion 25 flows through the flow path while being repeatedly detoured in an S shape. In other words, when the two-dimensional array of the convex portions 25 is regarded as the first column, the second column,..., The n-th column from the entrance of the flow path, the arrangement of the convex portions 25 in the n-th column is (n -1) It is arranged so as to be shifted up and down by a half pitch from the arrangement of the convex portions 25 in the row. Thereby, each convex part 25 becomes arrangement | positioning located in the center of the square which four convex parts which adjoin. Thus, by arranging the convex portion 25 so that the fluid flows while repeating the detour in an S shape, heat exchange between the cooling fluid and the first plate-like member is promoted, and the heat dissipation effect is further enhanced. Become.

  When the cooling fluid that has flowed through the flow path reaches the flow path outlet 14, it is discharged from the discharge port 36b through the guide formed by the fan-shaped recess 34b. Here, since the outlet 14 of the flow path has an arc shape, the fluid flowing from the peripheral portion of the flow path flows out while wrapping toward the center of the outlet 14. Therefore, as before, the cooling fluid can easily flow uniformly in the entire flow path, and the water pressure distribution of the cooling fluid can easily form contour lines perpendicular to the fluid flow. Therefore, a uniform heat dissipation effect can be obtained over the entire flow path having a planar spread, and variations in characteristics due to heat of the mounted LED chip 1 can be suppressed. Note that the shape of the flow path formed in the plate-like member is not limited to the shape shown in FIGS.

  In this Embodiment, it is preferable to arrange | position the convex part 25 formed in a flow path in a specific position with respect to the LED chip 1 which is a heat generating body. FIGS. 7A and 7B are schematic views showing the positional relationship between the LED chip 1 and the convex portion 25 when the LED chips 1 are arranged in a square matrix. As described above, heat generated from a heating element such as an LED chip is transmitted while spreading in the thickness direction at an angle of 45 ° in the heat sink in heat transport radiated from the heat radiating surface. That is, as shown in FIG. 7B, the heat generated in the LED chip 1 travels while spreading at an angle of 45 ° when traveling through the first plate-like member 2 in the plate thickness direction. For this reason, when the LED chips 1 and the like are mounted at such a high density that, for example, the distance between the chips is not more than the chip width (more specifically, not more than half the chip width), the heat generated by the two adjacent LED chips is generated. Are overlapped with each other in the thickness direction of the first plate member to cause thermal interference, and the heat density becomes relatively high at a position corresponding to the distance 11 between the LED chips 1. Therefore, it is desirable to form at least a part of the plurality of convex portions 25 at a position corresponding to the interval 11 between the LED chips 1. This is because if the convex portion 25 is formed, the heat density in that portion can be lowered. That is, when the convex portion 25 is formed, the surface area per unit projected area of the first plate-like member 2 is increased, so that the surface in contact with the cooling fluid (= the second surface 22 of the first plate-like member 2). The heat density in can be lowered. Therefore, even when semiconductor elements serving as heating elements such as LED chips are mounted with high density and cause thermal interference with each other, heat distribution can be suppressed and highly efficient cooling can be performed.

  For the same reason, it is desirable to form the convex portion 25 at a position corresponding to the approximate center of each LED chip 1. This is because semiconductor light emitting devices such as LED chips generally generate a large amount of heat at the center of the device. Therefore, in the present embodiment, as shown in FIG. 7A, the convex portions 25 are formed so as to be arranged at the center and the four corners of the LED chip 1. The convex portions 25 formed at the four corners of the LED chip 1 are arranged so as to have a center on the space 11 between the LED chips 1. That is, the convex portions 25 formed at the four corners of a certain LED chip 1 are also formed across three adjacent LED chips 1. By disposing the convex portions 25 in this way, it is possible to effectively dissipate heat while suppressing both the heat distribution generated inside the LED chip 1 itself and the heat distribution caused by the thermal interference between the LED chips 1. . Instead of forming the convex portions 25 at the four corners of the rectangular LED chip 1, the convex portions 25 may be arranged at the center of each side of the rectangular LED chip 1. In that case, one convex portion 25 is shared by two adjacent LED chips 1. In this case as well, it is preferable to arrange the center of the convex portion 25 on the space 11 between the LED chips.

  The plate-like members constituting the heat sink are preferably bonded with a eutectic material. By laminating the plate-like members with eutectic material, the heat conduction and electrical conduction from the first plate-like member 2 to the second plate-like member 3 are improved, and there is no leakage of cooling fluid, Bonding with high heat resistance is possible. If the heat conduction between the first plate-like member 2 and the second plate-like member is good, it is advantageous to configure a heat sink by combining these. Moreover, if the electrical conduction between the first plate-like member 2 and the second plate-like member is good, it is advantageous when a heat sink constituted by these combinations is used as a lead to the semiconductor chip.

  The eutectic material is preferably formed on the entire bonding surface, that is, on the entire second surface 22 of the first plate member 2 and the first surface 31 of the second plate member 3. As a result, the surface of the plate-like member can be protected from corrosion due to fluid by the eutectic material. For example, although it is preferable to use copper or the like having high thermal conductivity as the plate-like member, copper is likely to cause electrolytic corrosion or the like by cooling water. Therefore, a highly reliable heat sink can be obtained by covering the entire bonding surface of the plate-like member with a eutectic member having high corrosion resistance (for example, an alloy containing Au). Moreover, it can also be set as the structure which covers the surface of one plate-shaped member with a eutectic material, and forms a metal film in the bonding surface side of the other plate-shaped member. That is, by forming a metal film on the plate-like member, the surface of the plate-like member can be protected and connection with the eutectic material can be facilitated. The eutectic material is preferably an adhesive member containing at least one selected from the group consisting of AuSn, AuSi, SnAgBi, SnAgCu, SnAgBiCu, SnCu, SnBi, PbSn, and In. The metal film is not particularly limited as long as the metal film has good wettability in relation to the eutectic material as an adhesive member. As a preferred combination, an alloy containing Au (e.g., AuSn) as a eutectic material and a laminate including Au or Au as a metal film can be used.

  In addition, the heat sink of the present invention can mount two or more heating elements 1 in an array. By using the heat sink of the present invention, it is possible to secure sufficient heat dissipation even when a plurality of heating elements are mounted, and to suppress the flow of a coolant or the like, and the peeling off of the plate-like member caused thereby. Moreover, the arrayed heating elements formed on the same surface of the heat sink may be electrically connected in parallel and / or in series.

  Furthermore, the heating element is preferably a semiconductor element having a first conductivity type layer and a second conductivity type layer. When the first conductivity type is n-type, the second conductivity type is p-type. The reverse is also possible. In the present embodiment, the first conductivity type layer is electrically connected to the heat sink, and the second conductivity type layer is electrically connected to a metal member formed on the heat sink via an insulating film.

In the present invention, the semiconductor element which is a heating element is preferably a nitride semiconductor element. The nitride semiconductor element can be entirely composed of a nitride semiconductor, or can be partially composed of a material other than a nitride semiconductor. As the nitride semiconductor, a semiconductor made of GaN, AlN, InN, or a mixed crystal of In _X Al _Y Ga _1- XYN (0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is used. it can. In addition to this, B can be used as a group III element, and a part of N can be substituted with P and As as a group V element. The nitride semiconductor layer in which the nitride semiconductors are stacked has an active layer, and the active layer has a single (SQW) or multiple quantum well structure (MQW).

  The growth method of the nitride semiconductor is not particularly limited, but MOVPE (metal organic chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), HVPE (hydride vapor deposition), MBE (molecular beam epitaxy). Any method known as a method for growing a nitride semiconductor can be suitably used. In particular, MOCVD is preferable because it can be grown with good crystallinity.

  The electrode forming surface of the nitride semiconductor layer may be a light extraction surface, or the substrate side on which the nitride semiconductor layer is stacked may be the light extraction surface. When the substrate side on which the nitride semiconductor layer is stacked is used as the light extraction surface, a protective film is formed except for the surface on which the electrode of the nitride semiconductor element is formed, and the electrode formed on the nitride semiconductor layer and the external electrode And the like are preferably connected to each other by a metallized layer (bump). The light extraction efficiency is improved by using the substrate side as the light extraction surface.

  The nitride semiconductor device in the present invention has a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer on a support substrate via a conductive layer and a p-electrode, and an n-electrode is formed thereon. It can also be. The nitride semiconductor element has a counter electrode structure in which a p electrode and an n electrode face each other with a nitride semiconductor layer interposed therebetween. In this case, the nitride semiconductor device has a light extraction surface on the n-electrode side. Nitride semiconductors (particularly GaN-based semiconductors) can reduce the size of the n-electrode because the resistance of the n-type layer is low. This is because the light extraction efficiency can be improved by reducing the n-electrode to reduce the light blocking area.

Furthermore, a high-output white light-emitting element can be obtained by forming a phosphor in the vicinity of a nitride semiconductor element, which is a chip-like heating element, by mixing with a resin. An example of the phosphor is shown below. Examples of the green light-emitting phosphor include SrAl ₂ O ₄ : Eu, Y ₂ SiO ₅ : Ce, Tb, MgAl ₁₁ O ₁₉ : Ce, Tb, Sr ₇ Al ₁₂ O ₂₅ : Eu, (Mg, Ca, Sr, Ba And at least one of them) Ga ₂ S ₄ : Eu. Further, as blue light emitting phosphors, Sr ₅ (PO ₄ ) ₃ Cl: Eu, (SrCaBa) ₅ (PO ₄ ) ₃ Cl: Eu, (BaCa) ₅ (PO ₄ ) ₃ Cl: Eu, (Mg, Ca , Sr, Ba) ₂ B ₅ O ₉ Cl: Eu, Mn, (Mg, Ca, Sr, Ba, at least one) (PO ₄ ) ₆ Cl ₂ : Eu, Mn. Furthermore, red light emitting phosphors include Y ₂ O ₂ S: Eu, La ₂ O ₂ S: Eu, Y ₂ O ₃ : Eu, and Gd ₂ O ₂ S: Eu. In particular, by containing YAG, white light can be emitted, and uses such as a light source for illumination are greatly expanded. YAG _{is, (Y 1-x Gd x} ) 3 (Al 1-y Ga y) 5 O 12: is R (R is, Ce, Tb, Pr, Sm , Eu, Dy, at least 1 or more selected from Ho 0 <R <0.5.) In the present embodiment, a nitride-based phosphor is particularly used as a phosphor that emits reddish light. However, in the present invention, red light can be emitted from the YAG-based phosphor described above. It is also possible to provide a light emitting device including a phosphor. Such a phosphor that can emit red light is a phosphor that emits light when excited by light having a wavelength of 400 to 600 nm. Thus, by using a phosphor capable of emitting red light together with a YAG phosphor, it is possible to improve the color rendering properties of the light emitting device. By selecting the phosphor as described above, a light emitting element having various light emission wavelengths and high light extraction efficiency can be obtained.

  Further, for example, as shown in FIG. 8, the semiconductor device of the present invention includes a heat sink 40, and has a structure in which a coolant flows through the heat sink 40 through a supply port 42 and a discharge port 44 provided on the outer surface. Yes. Heat generated from the semiconductor element 46 that is a heating element is suitably dissipated by the coolant flowing in the heat sink 40. The heat sink 40 is a laminated plate member formed by bonding two or more plate members, for example, and has a eutectic material or a metal film having good wettability and is firmly bonded. There is no leakage of water. If the heating element of the present invention is a semiconductor light emitting element, particularly a semiconductor laser, it is possible to obtain a high-power laser light source device that performs laser oscillation in a short wavelength region of 500 nm or less. Needless to say, this embodiment can also be applied to the case where the heating element is a light emitting diode, a light receiving element or the like.

  As an example of the semiconductor device configured according to the embodiment of the present invention, there is a unit module light source device of an LED light source (FIG. 8). The outer shape of the light source device is formed of a heat sink 40, a fixing jig 50 for fixing the heat sink 40, and a screw 48. Further, a member for connecting the supply port and the discharge port of the heat sink 40 and the supply port 42 and the discharge port 44 of the fixing jig 50 without water leakage may be used between the heat sink 40 and the fixing jig 50. . This member may be, for example, a resin or a metal. The appearance of the unit light source device of the LED light source may be a quadrangular shape as shown in FIG. 8, or a triangular shape as shown in FIG. 8 and 9, the power supply wiring from the power source is omitted.

  Moreover, the unit light source device of the LED light source which consists of the said structure can be arranged, and an ultra high output module light source device can be comprised. FIG. 10 shows an ultrahigh power module light source device. As shown in FIG. 10, for example, when the appearance of the unit light source device 52 of the LED light source is a quadrangular shape, a further high output light source can be configured by arranging the light source devices 52 in an array or matrix. I can do it. In this case, it is preferable that the coolant supply port and the discharge port of the unit module light source device 52 communicate in series or in parallel between the unit module light source devices 52. That is, the supply ports or the discharge ports may be communicated between the unit module light source devices 52. Alternatively, the discharge port of a certain unit module light source device 52 may be connected to the supply port of the next unit module light source device and this may be repeated. Further, when the appearance of the unit module light source device 52 of the LED light source is a triangle, as shown in FIG. 11, the unit is formed into a polygon as a whole by sequentially arranging in an annular shape so that the sides of the triangle overlap each other. You may arrange as follows. By adopting such an arrangement, it is possible to configure a light source that has a small area and further increases the output. The ultra-high power module light source device may use a member for connecting the supply port and the discharge port between the unit module light source devices constituting the ultra-high output module light source device without water leakage. This member is, for example, resin or metal. This makes it possible to prevent water leakage even when a high water pressure is required in the serial connection of water channels arranged in an array, a matrix, or a circle.

Examples of the present invention are shown below, but the present invention is not limited to these examples.
The first plate member and the second plate member made of oxygen-free copper having a thickness of 200 μm are processed as shown in FIGS. The first plate-like member is formed with screw holes in four directions, and the second surface opposite to the first surface forming the heating element is processed to be uneven (FIG. 4). The second plate member is also formed with screw holes on all sides, and a supply port and a discharge port for introducing fluid are formed (FIG. 5). An Au layer and / or an AuSn layer is formed on the formation surface of these members. Thereafter, a heat treatment at 300 ° C. to 400 ° C. is performed in an N ₂ gas atmosphere and bonded to form a laminated plate member. A heating element is mounted on the laminated plate member using an adhesive member such as AuSn. At this time, when joining the heating elements by controlling the AuSn weight ratio so that the eutectic temperature of AuSn used for mounting the heating element is lower than the eutectic temperature of AuSn applied to the copper thin plate. Peeling of the heat sink can be suppressed. A heat sink in which such a heating element is formed is mounted on a water-cooled jig and fluid does not leak from the heat sink even when pure water or the like is circulated as a fluid.

[Example 1]
In a heat sink in which a concavo-convex structure is formed on the second surface of the first plate member by chemical etching or the like to form a laminated plate member, an LED element made of a 1 mm nitride semiconductor is formed on the heat sink. Twenty-one LED light sources with an opening diameter of about 8 mm were fabricated. The unevenness has a recess width of 200 μm and a depth of 200 μm, and the protrusion width is 800 μm. As a result of examining the average IL characteristic of one element among the 21 elements constituting the LED light source and the IL characteristic of one element obtained by the conventional passive cooling means, as shown in FIG. In the passive cooling means shown, the linearity is broken from 0.3A to 0.5A. On the other hand, in the active cooling means according to this embodiment, as shown by the solid line, even a semiconductor device having 21 LED elements mounted has a linearity of 0.5 A or more. It could be confirmed. Further, as shown in FIG. 13, a light output exceeding 5 Watts was obtained from the semiconductor device on which 21 pieces of the 1 mm LED elements were mounted. Even if the element spacing is about 200 μm and thermal interference is taken into consideration, a high-intensity LED light source with good linearity despite such high-density mounting was obtained.

[Example 2]
In a semiconductor device in which 21 LED elements are mounted on the heat sink of the present invention, constant water drive is performed by circulating pure water (condition of temperature 25 ° C., flow rate 0.4 L / min) as a circulating cooling medium as a fluid. I let you. The results are shown in FIGS.
The semiconductor device was circulated with pure water (conditions at a temperature of 25 ° C. and a flow rate of 0.4 L / min) and was driven at a constant current with a current of 10.5 A (an input current per element was 0.5 A) (FIG. 14). ). In the passive cooling method as a comparative example, when 0.5 A is input to one element as indicated by a dotted line, it is estimated that the output decreases by about 10% after 100 hours. When mounted on a heat sink using a static cooling means, degradation after 100 hours could hardly be observed even though the interval between the LED elements as the heating elements was 200 μm and the mounting was high density. The heat density at this time was about ² Watt / mm ² , but an optical output exceeding 3 Watt was obtained.

[Example 3]
Further, in a semiconductor device in which 21 LED elements are mounted on the heat sink of the present invention, pure water (temperature 25 ° C., flow rate 0.4 L / min) is circulated, and current 20 A (input current per element is 0). .95A) and driven at a constant current (FIG. 15). In the passive cooling method, when 1 A is input to one element, it is estimated that the output is reduced by about 15% after 10 hours. However, when mounted on a heat sink using the active cooling means of the present invention, Although the element spacing was 200 μm and high-density mounting, almost no deterioration after 10 hours could be observed. The heat density at this time was about 5 Watt / mm ² , but an optical output exceeding 5 Watt was obtained.

[Example 4]
A simulation is performed on the assumption that a heating element mounted in a matrix on a heat sink (hereinafter referred to as “system”) is placed in a vacuum insulation space, and cooling water at 25 ° C. circulates in the heat sink. Went. The simulation result is shown in FIG. FIG. 16A is a simulation using a heat sink in which convex portions are arranged at the center and four corners of the heating element and the diameter of the convex portions is set relatively large (hereinafter simply referred to as “system (a)”). ). FIG. 16B is a simulation using a heat sink in which the convex portion is arranged at the center of the heating element and the diameter of the convex portion is set to be relatively small (hereinafter simply referred to as “system (b)”). FIG. 16C is a simulation using a heat sink set so as not to have any protrusions (hereinafter simply referred to as “system (c)”).

In FIGS. 16A to 16C, the broken lines are contour lines showing the water pressure distribution of the cooling fluid. As shown in FIGS. 16A to 16C, the water pressure distribution of the cooling fluid in the system (b) is higher than that in the system (c), and in the system (a) compared with the system (b). It becomes easy to form a vertical contour line, and it becomes easy for the cooling fluid to flow uniformly in the entire flow path. Thereby, it can be seen that the light-emitting device using the heat sink with the convex portion set as in the system (a) suppresses variation in characteristics due to heat.

In the simulation, since the cooling water at 25 ° C. is continuously circulated, heat is stored in the heat sink if the minimum temperature of the system is 25 ° C. or higher. That is, it can be estimated that the temperature of the package rises because the heat is radiated to the material outside the system. 17 and 18 are graphs showing the relationship between the minimum and maximum temperatures of the systems (a) to (c) and the flow rate of the cooling water. Here, the “minimum temperature” of the system refers to the lowest temperature in the system, and the “maximum temperature” refers to the highest temperature in the system, that is, the temperature of the heating element itself. As shown in FIG. 17 and FIG. 18, the light emitting device using the heat sink with the convex portions set as in the system (a) maintains the minimum temperature and the maximum temperature of the system low even when the flow rate of the cooling water is small. Therefore, it is possible to suppress the outflow of heat to the material outside the system and lead to a thermal equilibrium state.

FIG. 19 shows the relationship between the thermal resistance calculated from the maximum temperature of the system and the flow rate. A light emitting device using a heat sink with convex portions set as in the system (a) can obtain a thermal resistance of 0.5 ° C./Watt or less at a flow rate of 0.3 to 0.7 L / min. This represents that a highly condensed heat density having a high heat density can be exhausted. Therefore, a light-emitting device having the configuration as in the system (a) of this embodiment can be a high-power light-emitting device that can be held with bare hands even when power exceeding 100 Watts is continuously applied. be able to.

  The present invention can be used as a heat sink in which a heating element such as a semiconductor light emitting element, a semiconductor light receiving element, or a semiconductor device is formed, and a semiconductor device including the heat sink.

FIG. 1 is a schematic cross-sectional view illustrating a configuration of a semiconductor device of the present invention. FIG. 2 is a schematic perspective view showing the configuration of the semiconductor device of the present invention with the metal cap and the like omitted. FIG. 3 is a schematic cross-sectional view illustrating the heat sink structure of the present invention. 4A to 4C are a perspective view, a plan view, and a cross-sectional view schematically showing an example of the first plate-like member of the present invention. FIGS. 5A to 5C are a perspective view, a plan view, and a cross-sectional view schematically showing an example of the second plate-like member of the present invention. FIGS. 6A and 6B are a plan view and a cross-sectional view showing a state where the plate-like members shown in FIGS. 4 and 5 are combined. 7A and 7B are a plan view and a cross-sectional view schematically showing the positional relationship between the semiconductor element and the convex portions in the flow path. FIG. 8 is a diagram illustrating an LED light source unit module light source device configured according to an embodiment of the present invention. FIG. 9 is a diagram illustrating an LED light source unit module light source device configured according to an embodiment of the present invention. FIG. 10 is a diagram illustrating an ultra-high output module light source device for an LED light source configured according to an embodiment of the present invention. FIG. 11 is a diagram illustrating an ultra-high output module light source device for an LED light source configured according to an embodiment of the present invention. FIG. 12 is a diagram showing a relative comparison between the IL characteristic of the LED element by the active cooling means and the IL characteristic of the LED element by the passive cooling means made according to the embodiment of the present invention. FIG. 13 shows the IL characteristics of the LED light source with high brightness according to the embodiment of the present invention. FIG. 14 is a diagram showing a comparison between a CW-ACC drive test of an LED light source with high brightness according to an embodiment of the present invention and a deterioration curve predicted from a CW-ACC drive test of a single LED element using passive cooling means. It is. FIG. 15 is a diagram showing a comparison between a CW-ACC drive test of an LED light source with high brightness according to an embodiment of the present invention and a deterioration curve predicted from a CW-ACC drive test of a single LED element using passive cooling means. It is. FIGS. 16A to 16C are schematic plan views showing the systems (a) to (c) in Example 4 of the present invention. FIG. 17 is a graph showing the relationship between the minimum temperature of the systems (a) to (c) and the cooling water flow rate in Example 4 of the present invention. FIG. 18 is a graph showing the relationship between the maximum temperature of the systems (a) to (c) and the coolant flow rate in Example 4 of the present invention. FIG. 19 is a graph showing the relationship between the thermal resistance of the systems (a) to (c) and the coolant flow rate in Example 4 of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,10 ... Heat generating body 2 ... 1st plate-shaped member 3 ... 2nd plate-shaped member

Claims (19)

A plurality of LED chips, which are heating elements , are arranged with a space narrower than the width of the LED chips, and have a first plate member having a first surface that is thermally connected, and the first plate shape A laminated plate-like member comprising a second plate-like member connected to the second surface of the member includes a supply port through which fluid is supplied and a discharge port through which the fluid is discharged. In the heat sink
The second surface of the first plate member has irregularities,
The concave and convex portions are formed at positions corresponding at least to the distance between the LED chips,
The second plate-shaped member has a fan-shaped recess extending in a fan shape from the supply port and the discharge port toward the center of the second plate-shaped member, and a radial direction in a direction in which the fluid flows on the bottom surface of the fan-shaped recess. A heat sink, wherein the support column serves as a joint surface with the first plate member.   The heat sink according to claim 1, wherein the unevenness is provided on a second surface facing a connection region of the heating element.   The heat sink according to claim 1, wherein the unevenness has a step of 10 μm to 500 μm. A plurality of LED chips, which are heating elements , are arranged with a space narrower than the width of the LED chips, and have a first plate member having a first surface that is thermally connected, and the first plate shape A laminated plate-like member comprising a second plate-like member connected to the second surface of the member includes a supply port through which fluid is supplied and a discharge port through which the fluid is discharged. In the heat sink
The second surface of the first plate member has irregularities,
The concave and convex portions are formed at positions corresponding at least to the distance between the LED chips,
The second plate-shaped member has a fan-shaped recess extending in a fan shape from the supply port and the discharge port toward the center of the second plate-shaped member, and a radial direction in a direction in which the fluid flows on the bottom surface of the fan-shaped recess. And the support column becomes a joint surface with the first plate member,
The first plate-like member has a larger surface area (b) on the second surface facing the contact area of the heating element than the contact area (a) of the heating element on the first surface. heatsink.   The ratio between the contact area (a) of the heating element on the first surface and the surface area (b) on the second surface facing the contact area of the heating element on the second surface is 0.2 ≦ (a / The heat sink according to claim 4, wherein b) <1.   The heat sink according to any one of claims 1 to 5, wherein the first surface of the first plate member and the heating element are connected via a eutectic material.   The heat sink according to any one of claims 1 to 5, wherein the second surface of the first plate member and the second plate member are connected via a eutectic material.   8. A semiconductor device comprising the heat sink according to claim 1 and a heating element made of a semiconductor.   9. The semiconductor device according to claim 8, wherein one or more of the heat generating elements are mounted on a first surface of the first plate member.   The semiconductor device according to claim 8, wherein the heating element is a semiconductor light emitting element. A cooling fluid is supplied to a laminated plate-shaped member including a first plate-shaped member having a first surface and a second plate-shaped member connected to the second surface of the first plate-shaped member. On the first surface of the first plate-like member, a heat sink comprising a supply port to be supplied, a flow path for flowing the cooling fluid, and a discharge port for discharging the cooling fluid. Or a plurality of nitride semiconductor light emitting devices mounted so as to be two-dimensionally arranged, and a space between the nitride semiconductor light emitting devices is narrower than the width of the nitride semiconductor device ,
A plurality of convex portions are formed on the surface of the first plate-shaped member in the flow path, and at least a part of the convex portions is formed at a position corresponding to the interval between the nitride semiconductor elements,
The second plate-shaped member has a fan-shaped recess extending in a fan shape from the supply port and the discharge port toward the center of the second plate-shaped member, and a radial direction in a direction in which the fluid flows on the bottom surface of the fan-shaped recess. A semiconductor light emitting device, wherein the support pillar is a joint surface with the first plate member.   The plurality of convex portions are arranged so as to be shifted from each other so that a line segment sequentially connecting the convex portions closest to each other from the inlet to the outlet of the flow path repeatedly bends. Semiconductor light emitting device.   13. The semiconductor light emitting device according to claim 11, wherein at least a part of the plurality of convex portions is formed so that a center is located between the semiconductor light emitting elements.   14. The semiconductor light emitting device according to claim 11, wherein at least a part of the plurality of convex portions is formed so that a center is positioned at substantially the center of the semiconductor light emitting element.   The semiconductor light emitting device according to any one of claims 11 to 14, wherein the plurality of convex portions are arranged at approximately the center and near the apex of each semiconductor light emitting element.   The semiconductor light-emitting device according to claim 11, wherein an upper surface of the convex portion is bonded to an opposing plate member.   The semiconductor light-emitting device according to claim 1, wherein the flow path is substantially circular or substantially elliptical in plan view.   The semiconductor light-emitting device according to claim 1, wherein an inlet and / or an outlet of the flow path are arcuate.   The semiconductor light emitting device according to claim 1, wherein a bonding surface of the plate-like member is covered with a metal material containing Au.

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