JP4909758B2 - Semiconductor laser device - Google Patents

Description

  The present invention relates to a semiconductor laser device and an optical pickup device. More specifically, the present invention relates to a semiconductor laser device that mounts a semiconductor laser element on a stem and emits laser light emitted from the semiconductor laser element to the outside, and the semiconductor laser. And an optical information processing system that converges laser light obtained by the semiconductor laser device and irradiates the information recording medium, receives reflected light from the information recording medium, and reproduces or / and records information. The present invention relates to an optical pickup device that performs reproduction / recording / erasing of a signal on an optical information recording medium such as a CD, a DVD, and a BD.

In recent years, the demand for semiconductor laser devices (hereinafter sometimes simply referred to as semiconductor lasers or semiconductor laser element devices) has increased with the growth of the optical storage industry. This semiconductor laser device has a demand for higher output, and the package to be incorporated is in the trend of miniaturization.
Accordingly, the amount of heat generated from one semiconductor laser element continues to increase significantly. However, since the heat radiation design from the semiconductor laser element is not sufficiently considered, as a result, the light emission characteristics are affected.
On the other hand, the semiconductor laser element has a polarization characteristic, and when incorporated in a device such as an optical pickup device, it is necessary to adjust by rotating the package. Therefore, the smaller the semiconductor laser element is, the more difficult it is to perform the rotation adjustment operation when it is incorporated into a device.

  Usually, a semiconductor laser device used for an optical pickup device includes a stem (package stem) mounted on a main body, a block portion integrally formed on the stem, and a side surface of the block portion via a submount. And a laser beam emitted from the semiconductor laser element is emitted to the outside in a predetermined direction (see Patent Document 1, Patent Document 2, and Patent Document 3).

  For example, as shown in FIG. 10, a semiconductor laser device 100L includes a stem (package stem) 101 mounted on a main body (not shown), a block portion 102 integrally formed on the stem, and a side surface of the block portion. And a semiconductor laser element (laser chip) 104 mounted via a submount 103. The laser beam emitted from the semiconductor laser element 104 is emitted to the outside in a predetermined direction (arrow A). .

Accordingly, in this semiconductor laser device 100L, the semiconductor laser element 104 and the submount 103 are mounted on the stem 101 via the block portion 102, so that heat generated from the semiconductor laser element 104 is transferred from the submount 103 to the block portion 102. It will be emitted from the stem 101 via. Therefore, since the generated heat requires a long heat dissipation, it is difficult to be transmitted to the stem 101 (or into the package), and the light emission characteristics of the semiconductor laser element 104 may not be maintained well.
Further, in the semiconductor laser device 10L, the smaller the semiconductor laser element 104 is, the more difficult it is to perform a rotation adjustment operation when it is incorporated into a device, that is, an adjustment operation by rotating the laser beam shape (and polarization characteristics).
Japanese Patent Laid-Open No. 4-155976 Japanese Utility Model Publication No. 63-118259 JP 2002-111128 A

  Accordingly, one of the main problems of the present invention is to make it easy to dissipate heat generated from the semiconductor laser element, and to maintain good light emission characteristics of the semiconductor laser element. Therefore, it is expected to provide a semiconductor laser device that is easy to operate when incorporating the semiconductor device into a device and that can cope with future miniaturization.

  The present invention relates to a main body, a disc shape or a semi-disc shape, a stem that is supported by the main body and whose support position can be rotated around a central axis, and a laser mounted on the stem directly or via a submount. Provided is a semiconductor laser device comprising: a semiconductor laser device that emits light parallel to a mounting surface; and a mirror portion that is mounted on or integrated with a stem and reflects the emitted laser light to be emitted to the outside. .

  According to the present invention, a semiconductor laser can be obtained by forming a stem in a disc shape or a semi-disc shape, allowing a support position relative to the main body to be rotatable around its central axis, and mounting or integrally forming a mirror portion on the stem. The element can be mounted on the stem directly or via a submount, whereby heat generated from the semiconductor laser element can be easily dissipated, and the light emission characteristics of the semiconductor laser element can be maintained well. These effects can cope with future miniaturization of the semiconductor laser device.

  A semiconductor laser device according to the present invention includes a main body, a disc shape or a semi-disc shape, a stem supported by the main body, and a support position of which can be rotated around a central axis, and a direct or submount on the stem. And a semiconductor laser element that emits laser light parallel to the mounting surface, and a mirror part that is mounted on or integrated with the stem and reflects the emitted laser light to the outside. It is characterized by.

In the present invention, the stem is disc-shaped or semi-disc-shaped, is supported by the main body, and its support position can be adjusted to rotate around the central axis, and the semiconductor laser element and the mirror portion are mounted on the stem. The
The stem is usually formed of metal (for example, iron, copper, and gold plating), and the semiconductor laser element is mounted directly or via a submount. Accordingly, heat generated in the semiconductor laser element is quickly dissipated from the stem. Furthermore, since the stem has a disc shape or a semi-disc shape as described above, the heat generated by the semiconductor laser can be dissipated radially, and the heat dissipation effect is further increased.

  Furthermore, if a heat radiating member for dissipating heat generated in the semiconductor laser element is provided on the back surface of the stem, it is possible to prevent an excessive rise in the temperature of the semiconductor laser element, thereby maintaining good emission characteristics of the semiconductor laser element. More preferred. Here, as a heat radiating member, a metal fitting for heat radiating and a heat radiating fin (a metal thin plate, particularly an aluminum thin plate) are preferable.

The radius of the disc or semi-disc is preferably 1.0 to 3.0 mm for adjusting the rotation, and the thickness of the stem is 1.0 to 6.0 mm. It is preferable as a base for the laser element and for promoting heat dissipation.
If the stem has one or more marks, for example 3 to 4 notches (preferably at equal intervals) on its outer peripheral part (arc part in the case of a semicircle), the angle is determined and adjusted when the rotation is adjusted. Rotation is easy and preferable.
In the present invention, the stem is usually covered with a cap (usually formed of the same material as the stem) covering the semiconductor laser element and the mirror portion mounted thereon, and the stem and the cap are combined with the package. Sometimes called. Note that the stem alone may be referred to as a package.

In the present invention, a semiconductor laser element is mounted on the stem directly or via a submount, and emits laser light parallel to the mounting surface. For example, the semiconductor laser element (light emitting diode) is not particularly limited. For example, the semiconductor laser element (light-emitting diode) is composed of Al _x Ga _y In _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z = 1). Nitride semiconductor devices to be used. The semiconductor laser element may emit a plurality of laser beams (oscillation wavelengths may be the same or different).

  In the present invention, a mirror part (reflecting part) that reflects the laser light emitted by the semiconductor laser and emits it to the outside (predetermined direction) is mounted on the stem. This mirror part may be formed integrally on the stem, or may be a separate mirror element (for example, a glass mirror, an aluminum mirror, or a hologram mirror) die-bonded on the stem. Furthermore, the stem has a block part integrally formed thereon, the block part has a concave part on the surface, and the mirror part has an engaging convex part that engages with the concave part. Also good.

  In the present invention, the stem further has a recess on the surface thereof, and a semiconductor laser element is mounted on the bottom surface of the recess, and the laser beam emitted from the semiconductor laser element is reflected on the wall surface of the recess to the outside. The emitting mirror part may be integrally formed, or a separate mirror element may be die-bonded.

  According to another aspect of the present invention, a disc-shaped or semi-disc shaped stem, a semiconductor laser device that is mounted on the stem directly or via a submount, and emits laser light parallel to the mounting surface, and the stem It is possible to provide a unit for a semiconductor laser element device that includes a mirror portion that is mounted on or integrally formed thereon and reflects the emitted laser light to be emitted to the outside.

According to another aspect of the present invention, there is provided a main body, a disc-shaped or semi-disc-shaped stem supported on the main body so as to be rotatable about its central axis, and a direct or submount on the stem. A semiconductor laser device mounted on the stem and emitting a laser beam parallel to the mounting surface, and a mirror unit mounted on or integrated with the stem and reflecting the emitted laser beam to the outside An element device;
An optical pickup device comprising an optical information processing system for converging laser light emitted from a mirror unit to irradiate an information recording medium and receiving reflected light from the information recording medium to reproduce or / and record information Can provide.

According to another aspect of the present invention, there is provided a main body, a disc-shaped or semi-disc-shaped stem supported on the main body so as to be rotatable about its central axis, and a direct or submount on the stem. A semiconductor laser element that is mounted via and emits laser light parallel to the mounting surface; and a mirror part that is mounted on or integrated with the stem and reflects the emitted laser light to be emitted to the outside.
The mirror unit includes a conversion processing surface that converts reflected light into non-coherent light on the reflection surface, and can provide an illumination device that uses the non-coherent light as illumination light.
Here, examples of a preferable conversion processing surface that can convert reflected light into non-coherent light include an uneven processing surface having fine unevenness that disturbs the coherency of laser light, and a satin processing surface.

Embodiments of a semiconductor laser device according to the present invention will be described below with reference to the drawings.
<Embodiment 1>
1A and 1B are schematic explanatory views showing a semiconductor laser device according to a first embodiment of the present invention, in which FIG. 1A is a schematic explanatory exploded perspective view including a coupled state, and FIG. C) is a schematic configuration explanatory diagram of an optical pickup device incorporating this semiconductor laser device.

First, in FIG. 1C, an optical pickup device P includes a semiconductor laser device L, an optical disk holder H, an optical system K, and a light receiving element (RF light receiving OPIC) J. It consists of a mirror h, a collimator lens c, an objective lens t, and a concave lens r.
Then, half of the laser light (laser beam) emitted from the semiconductor laser device L is reflected by the half mirror h, and the other half is transmitted. The reflected half of the laser light is converted into parallel light by the collimator lens c, and then converged by the objective lens t and irradiated onto the optical disk d as an information recording medium.

  Next, the reflected light from the optical disk d (the amount of reflected light changes depending on the presence or absence of data) returns to the half mirror h via the objective lens t and the collimator lens c, and merges with the other half that has passed through the concave lens r. And is received (reproduced) as information on the optical disk d.

1A and 1B, a semiconductor laser device L includes a main body 1, a disk-shaped metal stem 2 supported on the main body 1 so as to be rotatable around its central axis, and the stem. A semiconductor laser element (semiconductor laser chip) 5 is mounted on the submount (dielectric material) 3 and emits laser light parallel to the mounting surface 4, and a laser beam mounted on the stem 2 and emitted. It mainly includes a mirror portion (reflection mirror element) 6 that reflects and emits the light to the outside. Reference numeral 7 denotes a metal cap of the metal stem 2 and is referred to as a metal package together with the metal stem 2.
The semiconductor laser element 5 is composed of a light emitting layer, a P-type semiconductor, and an N-type semiconductor, has an edge-emitting type resonator structure, and has a lead portion 8a of the metal stem 2 at the wire bond portion 9: 9 on the N side and the P side. , 8b, 8c.

Thus, the laser light emitted from the semiconductor laser element 5 is reflected by the mirror part (reflecting mirror) 6 installed near the center of the metal stem 2, and with respect to the plane (xy plane in the figure) of the metal stem 2. Are bent vertically and discharged out of the metal package.
At this time, the angle of the mirror portion 6 is designed so that the laser beam is perpendicular to the plane (xy plane) of the metal stem 2. Further, the metal stem 2 is formed in a disk shape (the outer diameter is 2.0-6.0 mm, the plate thickness is 0.5-2.0 mm), and the round hole 2a of the main body 1 rotates the metal stem 2 around it. Since the circular step 2b [see FIG. (C)] that can be supported is provided, the rotation adjustment of the metal stem 2 that is necessary when the semiconductor laser device L is installed in the optical pickup device P is facilitated.

  Thus, when the semiconductor laser device L is installed in the optical pickup device P, the rotation can be adjusted to an angle that minimizes the influence of the polarization characteristics of the laser light [see the partial explanatory diagram X in FIG. In other words, the light intensity and the polarization characteristic vary depending on the angle depending on the FFP characteristic peculiar to the semiconductor laser, so that the semiconductor laser apparatus L is installed in the optical pickup apparatus P at the optimum angle by adjusting the rotation.

  Here, in FIG. 1B, the metal stem 2 can be directly contacted with the outside by a heat dissipating metal fitting 2c having a heat dissipating function on the back side of the die bond surface between the semiconductor laser element 5 and the metal stem 2. Since it has a planar shape, there is an advantage that it is easy to take a heat radiation design, and heat generated by passing a current through the semiconductor laser element 5 is easily released outside the metal stem 2 (package).

<Embodiment 2>
FIG. 2 is a schematic explanatory exploded perspective view showing a semiconductor laser device according to a second embodiment of the present invention, including a coupled state.
In FIG. 2, the semiconductor laser device 10L has a main body [the same configuration as that of the main body 1 in FIG. 1C, which is not shown], and a disk-shaped main body that can be rotated around its central axis. A metal stem 12 supported on the substrate and a submount (dielectric, hereinafter, description of each component may be omitted in the same manner as in the first embodiment) 13 is mounted on the stem, and the laser. A semiconductor laser element (semiconductor laser chip) 15 that emits light parallel to the mounting surface 14; and a mirror section (reflection mirror element) 16 that is mounted on the stem 12 and reflects the emitted laser light to be emitted to the outside. Is mainly provided. Reference numeral 17 denotes a metal cap of the metal stem 12 and is referred to as a metal package together with the metal stem 12.

The semiconductor laser element 15 has an edge-emitting type resonator structure, and is connected to the lead portions 18a, 18b, and 18c of the metal stem 12 at the wire bond portion 19 on the N side and the P side.
Thus, the laser light emitted from the semiconductor laser element 15 is reflected by the mirror portion (reflecting mirror) 16 installed near the center of the metal stem 12, and with respect to the plane of the metal stem 12 (xy plane in the figure). Are bent vertically and discharged out of the metal package.

  Further, the metal stem 12 is formed in a disc shape (the outer diameter is 2.0-6.0 mm, the plate thickness is 0.5-2.0 mm), and a round hole (not shown) of the main body is formed around the metal stem 12. Is provided with a circular step portion (not shown) that rotatably supports the semiconductor laser device 10L. When the semiconductor laser device 10L is installed in the optical pickup device (not shown), the rotation adjustment of the metal stem 12 is facilitated. .

<Embodiment 3>
FIG. 3 is a schematic explanatory exploded perspective view showing the semiconductor laser device according to the third embodiment of the present invention, including the coupled state.
In FIG. 3, a semiconductor laser device 20L has a main body [same configuration as that of the main body 1 in FIG. 1C, not shown], and is supported by the main body so as to be rotatable around its central axis. Formed on the stem 22, a semiconductor laser element (semiconductor laser chip) 25 that is mounted on the stem via a submount 23 and emits laser light parallel to the mounting surface 24, and is integrally formed on the stem 22. If necessary, a reflecting material (for example, silver paste or resin ) is coated thereon to be a mirror surface, and mainly includes a mirror part (reflection mirror element) 26 for reflecting the emitted laser light and emitting it to the outside. ing. Reference numeral 27 denotes a metal cap of the metal stem 22, which is referred to as a metal package together with the metal stem 22.

The semiconductor laser element 25 has an edge-emitting type resonator structure, and is connected to the lead portions 28a, 28b, and 28c of the metal stem 22 at the wire bonding portion 29 on the N side and the P side.
Thus, the laser light emitted from the semiconductor laser element 25 is reflected by the mirror portion (reflecting mirror) 26 installed near the center of the metal stem 22, and is relative to the plane of the metal stem 22 (xy plane in the figure). Are bent vertically and discharged out of the metal package.

  Further, the metal stem 22 is formed in a disk shape, and the round hole (not shown) of the main body includes a circular step portion (not shown) that rotatably supports the metal stem 22 around the semiconductor stem device 20L. Rotation adjustment of the metal stem 22 which is necessary when installing the lens in the optical pickup device becomes easy.

<Embodiment 4>
FIG. 4 is a schematic explanatory exploded perspective view including a coupled state, showing a semiconductor laser device according to a fourth embodiment of the present invention.
In FIG. 4, a semiconductor laser device 30L has a main body [the same configuration as that of the main body 1 in FIG. 1C, which is not shown], and is supported by the main body so as to be rotatable around its central axis. The metal stem 32, a semiconductor laser element (semiconductor laser chip) 35 mounted on the stem via a submount 33 and emitting laser light parallel to the mounting surface 34, and the submount 33 are also integrated. A mirror part (reflection mirror element) 36 that is formed and is formed by applying a reflective material (for example, silver paste, resin, etc.) thereon if necessary, for reflecting the emitted laser light and emitting it to the outside; Is mainly provided.

Here, the submount 33 and the mirror portion 36 are formed by integrally bonding two metal plates together to form a metal stem 32, a lower metal plate as a submount 33, and removing a part of the upper metal plate as well as a removal surface. Is made into a mirror part (a silver paste is applied to the surface) 36 by shaving.
Reference numeral 37 denotes a metal cap of the metal stem 32 and is referred to as a metal package together with the metal stem 32.
The semiconductor laser element 35 has an edge emitting resonator structure, and is connected to the lead portions 38a, 38b, and 38c of the metal stem 32 at the wire bonding portion 39 on the N side and the P side.

Thus, the laser light emitted from the semiconductor laser element 35 is reflected by the mirror portion (reflection mirror) 36 formed on the submount 33 and is perpendicular to the plane of the metal stem 32 (xy plane in the drawing). It is bent in the direction and discharged out of the metal package.
Further, the metal stem 32 is formed in a disk shape, and the round hole (not shown) of the main body has a circular step portion (not shown) that rotatably supports the metal stem 32 around the semiconductor stem device 30L. Rotation adjustment of the metal stem 32, which is necessary when installing the lens in the optical pickup device, becomes easy.

<Embodiment 5>
FIG. 5 is a schematic explanatory exploded perspective view including a coupled state, showing a fifth embodiment of the semiconductor laser apparatus according to the present invention.
In FIG. 5, a semiconductor laser device 40L has a main body [same configuration as that of the main body 1 in FIG. 1 (C), not shown], and is supported by the main body so as to be rotatable around its central axis. The metal stem 42 is mounted on the stem via a submount 43, and a semiconductor laser element (semiconductor laser chip) 45 that emits laser light parallel to the mounting surface 44 is formed integrally with the metal stem 42. And a mirror portion (reflection mirror element) 46 for reflecting the emitted laser light and emitting it to the outside.

Here, the mirror part 46 is integrally formed on the metal stem 42, has an inclined block part 46a having a recess 46b on the surface, and an engaging protrusion 46c. The engaging protrusion is used as the inclined block part 46a. And a mirror element 46d engaged with the recess 46b.
Reference numeral 47 denotes a metal cap of the metal stem 42 and is referred to as a metal package together with the metal stem 42.
The semiconductor laser element 45 has an edge-emitting type resonator structure, and is connected to the lead portions 48a, 48b, and 48c of the metal stem 42 at the wire bonding portion 49 on the N side and the P side.

Thus, the laser light emitted from the semiconductor laser element 45 is reflected by the mirror portion (reflection mirror) 46 formed on the submount 43 and is perpendicular to the plane of the metal stem 42 (xy plane in the drawing). It is bent in the direction and discharged out of the metal package.
Further, the metal stem 42 is formed in a disk shape, and the round hole (not shown) of the main body includes a circular step portion (not shown) that rotatably supports the metal stem 42 around the semiconductor stem device 40L. Rotation adjustment of the metal stem 42, which is necessary when installing the lens in the optical pickup device, becomes easy.

<Embodiment 6>
FIG. 6 is a schematic explanatory exploded perspective view including a coupled state, showing a semiconductor laser device according to a sixth embodiment of the present invention.
In FIG. 6, a semiconductor laser device 50L has a main body [same configuration as that of the main body 1 in FIG. 1C, not shown], and is supported by the main body so as to be rotatable around its central axis. A metal stem 52 having a recess 52a on the surface, and a semiconductor laser element (semiconductor laser chip) 55 that is mounted on the bottom surface of the recess 52a of the stem via a submount 53 and emits laser light parallel to the mounting surface 54. And a mirror part (reflection mirror element) that is integrally formed with an inclination on one wall surface of the recess 52a of the metal stem 52 (a silver paste is applied on the surface) and reflects the emitted laser light to be emitted to the outside. 56 mainly.

Reference numeral 57 denotes a metal cap of the metal stem 52 and is referred to as a metal package together with the metal stem 52.
The semiconductor laser element 55 has an edge-emitting type resonator structure, and is connected to the lead portions 58a, 58b, and 58c of the metal stem 52 at the wire bonding portion 59 on the N side and the P side.

Thus, the laser light emitted from the semiconductor laser element 55 is reflected by the mirror portion (reflection mirror) 56 formed on the submount 53 and is perpendicular to the plane of the metal stem 52 (xy plane in the drawing). It is bent in the direction and discharged out of the metal package.
Further, the metal stem 52 is formed in a disk shape, and the round hole (not shown) of the main body includes a circular step portion (not shown) that rotatably supports the metal stem 52 around the semiconductor stem device 50L. Rotation adjustment of the metal stem 52, which is necessary when installing the lens in the optical pickup device, becomes easy.

<Embodiment 7>
FIG. 7 is a schematic explanatory exploded perspective view including a coupled state, showing a seventh embodiment of the semiconductor laser apparatus according to the present invention.
In FIG. 7, a semiconductor laser device 60L has a main body [same configuration as that of the main body 1 in FIG. 1C, not shown], and is supported by the main body so as to be rotatable around its central axis. The semiconductor stem 62 mounted on the stem via the submount 63 and emitting two laser beams having different wavelengths (oscillation wavelengths: 620-680 nm and 390-470 nm) in parallel to the mounting surface 64 It mainly includes an element (semiconductor laser chip) 65 and a mirror part (reflection mirror element) 66 that is mounted on the stem 62 and reflects each emitted laser beam to be emitted to the outside.
Reference numeral 67 denotes a metal cap of the metal stem 62 and is referred to as a metal package together with the metal stem 62.

The semiconductor laser element 65 has an edge-emitting type resonator structure, and is connected to the lead portions 68a, 68b, and 68c of the metal stem 62 at the wire bonding portion 69 on the N side and the P side.
Thus, the two laser beams having different wavelengths emitted from the semiconductor laser element 65 are reflected by the mirror portion (reflecting mirror) 66 installed near the center of the metal stem 62, and the plane of the metal stem 62 (x- in the figure). is bent perpendicularly to the y-plane) and released out of the metal package.

  Further, the metal stem 62 is formed in a disk shape, and the round hole (not shown) of the main body includes a circular step portion (not shown) that rotatably supports the metal stem 62 around the semiconductor stem device 60L. Rotation adjustment of the metal stem 62, which is necessary when installing the lens in the optical pickup device, becomes easy.

<Eighth embodiment>
FIG. 8 is a schematic explanatory exploded perspective view including a coupled state, showing an eighth embodiment of the semiconductor laser apparatus according to the present invention.
In FIG. 8, a semiconductor laser device 70L has a main body [the same configuration as that of the main body 1 of FIG. 1 (C), not shown], and is supported by the main body so as to be rotatable around its central axis. And a semiconductor stem element which is mounted on the stem via a submount 73 and emits laser light parallel to the mounting surface 74. The metal stem 72 has three notches 72a, 72b and 72c as marks on the outer periphery. (Semiconductor laser chip) 75 and a mirror part (reflection mirror element) 76 that is mounted on the stem 72 and reflects the emitted laser light and emits it outside. Reference numeral 77 denotes a metal cap of the metal stem 72, which is referred to as a metal package together with the metal stem 72.

The semiconductor laser element 75 has an edge-emitting resonator structure, and is connected to the lead portions 78a, 78b, and 78c of the metal stem 72 at the wire bonding portion 79 on the N side and the P side.
Thus, the laser light emitted from the semiconductor laser element 75 is reflected by the mirror portion (reflecting mirror) 76 disposed near the center of the metal stem 72, and with respect to the plane of the metal stem 72 (xy plane in the figure). Are bent vertically and discharged out of the metal package.

Further, the metal stem 72 is formed in a disk shape, and the round hole (not shown) of the main body has a circular step portion (not shown) that rotatably supports the metal stem 72 around the semiconductor stem device 70L. Rotation adjustment of the metal stem 72, which is necessary when installing the lens in the optical pickup device, becomes easy. In particular, since the metal stem 72 has three notches 72a, 72b, 72c as marks on the outer periphery thereof, the angle determination and adjustment rotation are facilitated when the rotation is adjusted, which is more preferable.

<Embodiment 9>
FIG. 9 is an exploded perspective view schematically illustrating a semiconductor laser device according to a ninth embodiment of the present invention, including a coupled state.
In FIG. 9, a semiconductor laser device 80L has a main body [the same configuration as that of the main body 1 in FIG. 1C, which is not shown], and is supported by the main body so as to be rotatable around its central axis. And a semiconductor stem element mounted on the stem via a submount 83 and emitting laser light parallel to the mounting surface 84. The metal stem 82 has three notches 82a, 82b and 82c as marks on the outer periphery. (Semiconductor laser chip) 85 and a mirror part (reflective mirror element whose surface is satin-finished) 86 that is mounted on the stem 82, converts the emitted laser light into non-coherent light, reflects it, and emits it to the outside. I have. Reference numeral 87 denotes a metal cap of the metal stem 82 and is referred to as a metal package together with the metal stem 82.

The semiconductor laser element 85 has an edge-emitting type resonator structure, and is connected to the lead portions 88a, 88b, 88c of the metal stem 82 at the wire bonding portion 89 on the N side and the P side.
Thus, the laser light emitted from the semiconductor laser element 85 is converted to non-coherent by the mirror portion (reflection mirror) 86 disposed near the center of the metal stem 82 and reflected, and the plane of the metal stem 82 (in the drawing) The laser beam is bent in a direction perpendicular to the (xy plane) and emitted outside the metal package as a laser beam that does not affect the human eye. Of course, laser light may be used as illumination light, and the mirror portion may be diffused around as a gentle convex surface.

  As described above, each embodiment of the semiconductor laser device according to the present invention has a shape in which heat is easily radiated from the chip despite being incorporated in a limited space such as a pickup application or an illumination application. In addition, the rotation adjustment at the time of axis alignment is also possible.

BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic explanatory drawing which shows Embodiment 1 of the semiconductor laser apparatus based on this invention, (A) is a schematic explanatory exploded perspective view including a coupling state, (B) is the principal part expansion explanatory drawing, (C) is FIG. 1 is a schematic configuration explanatory diagram of an optical pickup device incorporating this semiconductor laser device. It is a schematic explanatory exploded perspective view including the combined state which shows Embodiment 2 of the semiconductor laser apparatus which concerns on this invention. FIG. 6 is a view corresponding to FIG. 2 showing a third embodiment of the semiconductor laser apparatus according to the present invention. FIG. 6 is a view corresponding to FIG. 2, showing a fourth embodiment of the semiconductor laser apparatus according to the present invention. FIG. 6 is a view corresponding to FIG. 2, showing a semiconductor laser device according to a fifth embodiment of the present invention. FIG. 9 is a view corresponding to FIG. 2, showing a sixth embodiment of the semiconductor laser apparatus according to the present invention. FIG. 9 is a view corresponding to FIG. 2, showing a seventh embodiment of the semiconductor laser apparatus according to the present invention. FIG. 9 is a view corresponding to FIG. 2, showing an eighth embodiment of the semiconductor laser apparatus according to the present invention. FIG. 9 is a view corresponding to FIG. 2, showing a ninth embodiment of the semiconductor laser apparatus according to the present invention. It is principal part expansion explanatory drawing of the conventional semiconductor laser apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Main body 2 Metal stem 2a Round hole 2b Circular step part 2c Heat radiation metal fitting 3 Submount 4 Mounting surface 5 Semiconductor laser element 6 Mirror part 7 Metal cap 8a Lead part 8b Lead part 8c Lead part 9 Wire bond part 10 Heat radiation metal L Semiconductor Laser equipment

Claims (2)

It includes scan Temu and a semiconductor laser element which radiate instrumentation wearing of it laser light on the stem, made form on the stem, and a mirror unit for output release reflects the laser light emitted, A semiconductor laser device having a convex reflecting surface on which the mirror unit reflects and converts laser light into non-coherence light . Overlaid onto the stem, the semiconductor laser device according to claim 1, further comprising a cap covering the semiconductor laser device and a mirror unit.