JP4893912B2 - Information recording element - Google Patents

Description

  The present invention relates to an information recording element having excellent moldability and processability, and more particularly to a fabrication technique for driving an element having an excellent nonvolatile memory effect using an organic material for a dielectric layer at a low voltage. is there.

  As an information recording element that exhibits a nonvolatile memory effect, a ferroelectric nonvolatile memory formed by sandwiching a ferroelectric thin film between opposing electrodes is well known. In recent years, since these elements have been adapted to mass-use portable information terminals, the present invention provides an element having excellent plasticity and excellent impact resistance as well as excellent moldability and processability. Has come to be desired. As an element satisfying such demands, it is considered to produce an element by applying an organic material having plasticity and applying it from a solution by utilizing its solvent solubility. In addition, a technique of forming a material having high impact resistance such as plastic on a material having plasticity has been developed.

  It has been reported that an element having a memory effect using an organic material can be manufactured in a field effect transistor using a complex of polyaniline and an organic acceptor as an active layer (see Patent Document 1). In this case, since the memory effect and the current amplification effect must be exhibited in the same active layer, there is a problem that the adjustment of the driving performance of the element cannot be controlled independently of the memory effect. .

  Moreover, although the expression of the memory effect using an ionic organic charge transfer complex has been reported (see Patent Document 2), this requires a high applied voltage of tens to hundreds of volts to operate. There are difficulties.

  On the other hand, the memory effect is realized by using a ferroelectric material for the gate dielectric layer and an organic material for the active layer as a structure that can exert the memory effect independently of the current control layer (active layer). As for the fabrication of the field effect transistor type information recording element, there is a report that developed a memory property by using a lead zirconate titanate (PZT) thin film fabricated by RF sputtering for the gate dielectric layer (non- Patent Document 1). However, in this case, the dielectric layer is formed by a vacuum process, which causes a problem in molding / workability.

In order to exert superiority in moldability and workability, there is a report that the memory effect is expressed by the PZT film using the sol-gel method as an element that expresses the memory effect by using the applied dielectric layer (non- Patent Document 2). However, this method has a problem that the processing temperature becomes 400 ° C. or higher and high temperature molding is required.
JP 2004-6863 A JP-A-2-79401 G. Velu, Appl. Phys. Lett., Vol. 79, p659, 2001 T.Kodzasa, Synthetic Metals, Vol. 137, p943, 2003

  The present invention provides a low voltage driving technology for an information recording element excellent in moldability and workability, in particular, an information recording element using an organic material having a dielectric property that can be used as a nonvolatile memory in a dielectric layer. is there.

  In the nonvolatile memory in which the organic compound having the characteristics of being solvent-soluble and having flexibility in a solid state is used for the dielectric layer, the present inventors can control the properties of the organic material constituting the dielectric layer. Based on the prediction that an information recording element that can be driven at a lower voltage can be produced, we have intensively studied the development of memory properties using various organic compounds having solvent solubility, resulting in a new configuration. The present inventors have found an organic material having the present invention and completed the present invention.

According to the present invention, in an information recording element containing at least one organic thin film between an anode and a cathode, at least one layer is a polymer compound represented by the following general formula (Formula 1), and at least one different from the polymer compound: There is provided an information recording element comprising a mixture of at least two kinds of organic polymer compounds.

Moreover, according to the present invention, at least one of the different types of polymers mixed with the polymer compound represented by the general formula (Formula 1) is represented by the following general formula (Formula 2). An information recording element comprising the mixture of the above is provided.

  The present invention is also a field effect transistor having a gate electrode, a dielectric layer, a semiconductor layer, a drain, and a source electrode on a substrate, wherein the dielectric layer is a polymer represented by the general formula (Formula 1). There is provided an information recording element comprising a field effect transistor comprising a compound and a mixture of a polymer compound represented by the general formula (Formula 2).

  When a memory element is manufactured using a dielectric layer, in many cases, a phenomenon in which the polarization of the dielectric material is changed by an external electric field is used. In particular, when an organic material having plasticity is used, a ferroelectric polymer material such as polyvinylidene fluoride is often used as the material. These materials have a large polarization in the side chain, but take advantage of the fact that the polarization of the side chain is easily changed by electric field application.

  On the other hand, the material represented by the general formula (Chemical Formula 1) has an α-helix structure in which the chief examiner is spirally wound into a columnar shape in a solid thin film. For this reason, it has a large polarization component not only in the polarization component of the side chain but also in the spiral main chain direction. In this polymer material, a phenomenon in which the polarization components of the main chain and the side chain are changed together by application of an external electric field is obtained. For this reason, hysteresis appears in a large voltage-current curve. This can be used as a memory effect. However, if the dipoles that cause such polarization exist too closely in the material, electrostatic interaction acts between the dipoles and suppresses fluctuations in polarization. That is, in an environment where electrostatic interaction that restricts polarization fluctuations works, the externally applied voltage required for the polarization fluctuations, that is, the drive voltage of the information recording element becomes high. In order to avoid this, it is effective to appropriately dilute the polarization concentration.

  Therefore, in the present invention, by appropriately diluting the concentration in the material of the dipole that exhibits the memory property, the material composition is made to weaken the effect of the inhibitory electrostatic interaction.

  Since the information recording element of the present invention can exhibit memory characteristics with a low driving voltage, it requires less power to operate. Since it is composed of an organic semiconductor solid thin film and a metal electrode, it is easy to manufacture, and can be made into a film element, a large-area element, a flexible element, and has high impact resistance.

The present invention will be described in detail below.
As a typical example of the present invention, a thin film transistor having a gate electrode 20, a gate insulating layer 30, a source or drain 40, and a semiconductor layer 50 on a substrate 10 as shown in FIG. Information recording comprising a field effect transistor comprising a polymer compound represented by the general formula (Chemical formula 1) and a polymer compound represented by the general formula (Chemical formula 2) An element is provided.

  According to the present invention, in the method for manufacturing an information recording element, at least a part of the elements constituting the information recording element is produced by applying or adhering a solution. An element manufacturing method is provided.

R ¹ of the compound represented by the general formula (Chemical Formula 1) is a hydrogen atom; a halogen atom; a hydroxyl group; a formyl group; a carboxyl group; a cyano group; a nitro group; an amino group; a sulfonic acid group; A linear or branched alkyl group having 1 to 20 carbon atoms such as n-propyl group, isopropyl group, n-butyl group, tert-butyl group, sec-butyl group, n-pentyl group and n-hexyl group; vinyl 1-20 linear or branched alkenyl groups such as a group, propenyl group, bethenyl group, pentenyl group, hexenyl group; methoxy group, ethoxy group, n-propoxy group, isopropoxy group, n-butoxy group, tert-butoxy group A linear or branched group having 1 to 20 carbon atoms which may be substituted, such as a group, ethoxycarbonylpropoxy group, sec-butoxy group, n-pentyloxy group, n-hexyloxy group, n-heptyloxy group, etc. A hydroxyalkyl group having 1 to 20 carbon atoms such as a hydroxymethyl group and a hydroxyethyl group; a benzene ring, a naphthalene ring, an anthracene ring, a thiophene ring, a furan ring, a pyrrole ring, a pyrazole ring, a pyridine ring, a pyran ring, etc. C6-C12 aromatic ring or heterocyclic ring; carboxylalkyl group such as carboxylmethyl group; methoxycarbonyl group, trifluoromethoxycarbonyl group, ethoxycarbonyl group, n-propoxycarbonyl group, isopropoxycarbonyl group, n-butoxycarbonyl A linear or branched alkoxycarbonyl group having 2 to 21 carbon atoms which may be substituted, such as a group, tert-butoxycarbonyl group, sec-butoxycarbonyl group, n-pentyloxycarbonyl group, n-hexyloxycarbonyl group; Methylcarbonyloxy group, ethylcal Bonyloxy group, n-propylcarbonyloxy group, isopropylcarbonyloxy group, n-butylcarbonyloxy group, sec-butylcarbonyloxy group, tert-butylcarbonyloxy group, n-pentylcarbonyloxy group and the like may be substituted. A linear or branched alkylcarbonyloxy group having 2 to 21 carbon atoms; a methoxycarbonylmethyl group, a methoxycarbonylethyl group, an ethoxycarbonylmethyl group, an ethoxycarbonylethyl group, an n-propoxycarbonylethyl group, an n-propoxycarbonylpropyl group, It is a substituent selected from the group consisting of a linear or branched alkoxycarbonylalkyl group having 3 to 22 carbon atoms such as an isopropoxycarbonylmethyl group and an isopropoxycarbonylethyl group.

The compound represented by the general formula (Formula 1) may have an amino acid as a repeating unit, and R ¹ may be the same or different in the amino acid. Further, the amino acid is polymerized by one or more kinds of peptide bonds. In this case, amino acids include glycine, alanine, phenylalanine, valine, leucine, isoleucine, proline, methionine, lysine, arginine, serine, threonine, tyrosine, histidine, cysteine, asparagine, aspartic acid, glutamine, glutamic acid, and tryptophan. Selected.

  The terminals X and Y of the compound represented by the general formula (Formula 1) are not particularly limited, and any substituent may be used. For example, each independently, a hydrogen atom, a halogen atom, a linear or branched alkyl group having 1 to 20 carbon atoms such as an n-hexyl group, a hydroxyl group, a formyl group, a carboxyl group, a cyano group, a nitro group, an amino group, Examples thereof include a sulfonic acid group, an alkenyl group, an alkoxy group, a hydroxyalkyl group, a carboxylalkyl group, an alkylcarbonyl group, an alkoxycarbonyl group, an alkylcarbonyloxy group, an aromatic hydrocarbon group, and an aromatic heterocyclic group.

  The number n of repeating units of the compound represented by the general formula (Formula 1) can be reduced as long as it is 10 or more, and is not particularly limited as long as it is 10 or more. 20 or more and 1000 or less.

R ² and R ^{3 in the} compound represented by the general formula (Formula 2) are each independently a hydrogen atom; a halogen atom; a hydroxyl group; a formyl group; a carboxyl group; a cyano group; a nitro group; an amino group; Or straight chain having 1 to 20 carbon atoms such as methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, tert-butyl group, sec-butyl group, n-pentyl group and n-hexyl group; Or a branched alkyl group; 1-20 linear or branched alkenyl groups such as vinyl group, propenyl group, bethenyl group, pentenyl group, hexenyl group; methoxy group, ethoxy group, n-propoxy group, isopropoxy group, n Carbon number which may be substituted such as -butoxy group, tert-butoxy group, ethoxycarbonylpropoxy group, sec-butoxy group, n-pentyloxy group, n-hexyloxy group, n-heptyloxy group, etc. -20 linear or branched alkoxy group; hydroxyalkyl group having 1 to 20 carbon atoms such as hydroxymethyl group, hydroxyethyl group; benzene ring, naphthalene ring, anthracene ring, thiophene ring, furan ring, pyrrole ring, pyrazole ring Aromatic ring or heterocyclic ring having 6 to 12 carbon atoms such as pyridine ring and pyran ring; carboxyl alkyl group such as carboxyl methyl group; methoxycarbonyl group, trifluoromethoxycarbonyl group, ethoxycarbonyl group, n-propoxycarbonyl group, iso A straight chain having 2 to 21 carbon atoms which may be substituted, such as propoxycarbonyl group, n-butoxycarbonyl group, tert-butoxycarbonyl group, sec-butoxycarbonyl group, n-pentyloxycarbonyl group, n-hexyloxycarbonyl group, etc. Chain or branched alkoxycarbonyl group; methylcarbo Substitution of nyloxy group, ethylcarbonyloxy group, n-propylcarbonyloxy group, isopropylcarbonyloxy group, n-butylcarbonyloxy group, sec-butylcarbonyloxy group, tert-butylcarbonyloxy group, n-pentylcarbonyloxy group, etc. A linear or branched alkylcarbonyloxy group having 2 to 21 carbon atoms which may be substituted; methoxycarbonylmethyl group, methoxycarbonylethyl group, ethoxycarbonylmethyl group, ethoxycarbonylethyl group, n-propoxycarbonylethyl group, n- It is a substituent selected from the group consisting of a linear or branched alkoxycarbonylalkyl group having 3 to 22 carbon atoms such as a propoxycarbonylpropyl group, an isopropoxycarbonylmethyl group, and an isopropoxycarbonylethyl group.

  The terminals X and Y of the compound represented by the general formula (Formula 2) are not particularly limited, and any substituent may be used. For example, each independently, a hydrogen atom, a halogen atom, a linear or branched alkyl group having 1 to 20 carbon atoms such as an n-hexyl group, a hydroxyl group, a formyl group, a carboxyl group, a cyano group, a nitro group, an amino group, Examples thereof include a sulfonic acid group, an alkenyl group, an alkoxy group, a hydroxyalkyl group, a carboxylalkyl group, an alkylcarbonyl group, an alkoxycarbonyl group, an alkylcarbonyloxy group, an aromatic hydrocarbon group, and an aromatic heterocyclic group.

  The number n of repeating units of the compound represented by the general formula (Chemical Formula 2) can be reduced if it is 10 or more, and it is not particularly limited if it is 10 or more. 20 or more and 1000 or less.

  Composition of both polymer materials in the mixture of the polymer material represented by the general formula (Formula 1) and the polymer material represented by the general formula (Formula 2) used for forming the dielectric layer 30 in the present invention. The ratio is not particularly limited, and it is desirable to appropriately adjust the composition so as not to lower the memory performance while lowering the driving voltage. The composition ratio generally used is such that the ratio of the material represented by the general formula (Chemical formula 2) to the material represented by the general formula (Chemical formula 1) is 0.1% to 50% in weight concentration, but generally suitable. It is used from 1% to 20%.

  As an example of the structure of the information recording element used in the present invention, the structure shown in FIG. 1 can be cited. However, the structure is not particularly limited, and the dielectric layer 30 has a general formula (Formula 1). Any structure may be used as long as a polymer material mixture represented by the general formula (Chemical Formula 2) is used.

  The method for producing the dielectric layer 30 used in the present invention is not particularly limited, and any method may be used. For convenience, spin coating, dip coating, drop casting, etc. are often used, but from the viewpoint of pattern control, printing such as screen printing, gravure printing, offset printing, flexographic printing, inkjet printing, etc. Technology can also be used. Also. A printing method called soft lithography such as microcontact printing or micromolding can also be applied.

The thickness of the dielectric layer 30 used in the present invention is 10 nm to 5000 nm, preferably 20 nm to 1000 nm.
The substrate 10 used in the present invention is not particularly limited, and any substrate may be used. In general, glass substrates such as quartz are preferably used, but polycarbonate (PC), polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyethersulfone (PES), polyarylate A flexible film substrate such as a plastic film substrate such as (PAR) or polyetherketone (PEEK), a ceramic film such as a green sheet, and a metal foil film can also be used.

  As materials for the electrodes 20 and 50 used in the present invention, metals such as gold, silver, platinum, palladium, aluminum and copper, and compound conductors such as ITO are often used, but are not limited thereto. . The manufacturing method is not particularly limited, and any method may be used. A generally used method is plated wiring or the like, but a wet manufacturing process applied or attached from a solution such as gravure printing, screen printing, and inkjet printing is also applicable. In this case, an electrode made of an organic material such as a thiophene-based conductive polymer (PEDOT), polyaniline, or a derivative thereof can be used as the gate 20 in addition to the silver paste, the gold paste, and the carbon paste. It is also possible to apply a dry manufacturing process different from the above, such as a vacuum evaporation method or a sputtering method. In addition, the gate 20 can be composed of a mixture or lamination of a plurality of materials, or can be subjected to a surface treatment in order to stabilize the device, increase the lifetime, increase the charge injection efficiency, and the like.

  In the thin film transistor of the present invention, an organic semiconductor material is used for the semiconductor layer 50. The composition is not particularly limited, and may be composed of a single substance, or may be composed of a mixture of a plurality of substances. Furthermore, it can also be constituted by a layered structure of several substances.

The following are known as organic semiconductor materials exhibiting excellent characteristics so far.
Anthracene, tetracene, pentacene or derivatives thereof substituted at the terminal. α-sexual thiophene. Perylenetetracarboxylic dianhydride (PTCDA) and derivatives with substituted ends. Naphthalenetetracarboxylic dianhydride (NTCDA) and derivatives with substituted ends. Copper phthalocyanine and derivatives whose ends are substituted with fluorine or the like. Derivatives in which copper of copper phthalocyanine is substituted with nickel, titanium oxide, fluorinated aluminum or the like, and derivatives in which each terminal is substituted with fluorine or the like. Fullerene, rubrene, coronene, anthradithiophene and derivatives substituted at their ends. Polymers of polyphenylene vinylene, polythiophene, polyfluorene, polyphenylene, polyacetylene, and derivatives in which these terminals or side chains are substituted.

  The method for manufacturing the semiconductor layer 50 used in the present invention is not particularly limited, and any method may be used. In general, vapor phase growth methods such as vacuum deposition are often used, but from the viewpoint of simple and low cost production, gravure printing, screen printing, ink jet printing, etc., materials are mixed with a solvent and applied from a solution. The printing method created as such is applied. Also. A printing method called soft lithography such as microcontact printing or micromolding can also be applied.

Examples The present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.
(Reference Example 1)
The glass substrate 10 on which the ITO electrode patterned as the gate electrode 20 was produced was subjected to ultrasonic cleaning for 15 minutes with a neutral detergent (Iuchi Seieido Co., Ltd .: Pure Soft) diluted 5 times with pure water, The detergent was removed by ultrasonic cleaning for 15 minutes in pure water.

  Thereafter, the substrate was subjected to ultraviolet irradiation cleaning for 20 minutes in an oxygen atmosphere using an ultraviolet-ozone cleaner. On the substrate cleaned in this manner, a dielectric layer 30 is diped at a rate of 1 cm / sec from a solution (10 wt.%) Of poly (γ-methyl-L-glutamate) (PMLG) dissolved in dichloromethane. A thin film of PMLG alone was prepared by coating.

At this time, the thickness of the PMLG thin film is 400 nm. Next, a pentacene thin film was formed as a semiconductor active layer 40 from above by a vacuum deposition method. Pentacene was purified by sublimation purification 5 times. The vacuum deposition conditions were that the substrate was fixed above the deposition boat, the substrate temperature was adjusted to about 30 ° C., and the degree of vacuum was reduced to 2 × 10 ⁻⁶ Torr. Thereafter, vacuum deposition was performed to a thickness of 50 nm at a rate of 2 nm per minute. Thereafter, as the source and drain electrodes 60, gold was vacuum-deposited using a nickel mask so as to have a width of 100 μm and a thickness of 0.05 μm.

At this time, the distance between the source and the drain is 20 μm. In the device thus fabricated, the current flowing between the source and the drain when a gate bias was applied from the ITO gate electrode was measured. The voltage between the source and the drain was fixed at −80V, and the gate voltage was applied up to + 100V. Thereafter, the gate voltage was swept in steps to −100V, and then continuously swept to + 100V. The current _IDS flowing between the source and the drain after 1 second of the voltage step was measured. A measurement diagram at this time is shown in FIG. It has been confirmed that a history appears in the current curve, a memory property is expressed, and a larger memory property is obtained compared to the measurement in the atmosphere.

Furthermore, the change in current history was observed with the voltage between the source and drain fixed at -20V. The gate voltage was initially applied to + 100V. Thereafter, the gate voltage was swept in steps to −100V, and then continuously swept to + 100V. The current _IDS flowing between the source and the drain after 1 second of the voltage step was measured. A measurement diagram at this time is shown in FIG. A history appeared in the current curve, and it was confirmed that memory performance was exhibited even under low voltage.

  The glass substrate 10 on which the ITO electrode patterned as the gate electrode 20 was manufactured was subjected to ultrasonic cleaning for 15 minutes with a neutral detergent (Iuchi Seieido Co., Ltd .: Puresoft (trade name)) diluted 5-fold with pure water. After that, ultrasonic cleaning was performed in pure water for 15 minutes to remove the detergent.

  Thereafter, the substrate was subjected to ultraviolet irradiation cleaning for 20 minutes in an oxygen atmosphere using an ultraviolet-ozone cleaner. On the substrate thus cleaned, as a dielectric layer 30, a mixture of poly (γ-methyl-L-glutamate) (PMLG) and polymethyl methacrylate (PMMA) (weight ratio, PMLG: PMMA = 9: From the mixed solution of dichloromethane and chloroform of 1), dip coating was performed at a rate of 1 cm / sec to form a PMLG-PMMA mixture thin film.

At this time, the thickness of the PMLG-PMMA mixture thin film is 400 nm. Next, a pentacene thin film was formed as a semiconductor active layer 40 from above by a vacuum deposition method. Pentacene was purified by sublimation purification 5 times. The vacuum deposition conditions were that the substrate was fixed above the deposition boat, the substrate temperature was adjusted to about 30 ° C., and the degree of vacuum was reduced to 2 × 10 ⁻⁶ Torr. Thereafter, vacuum deposition was performed to a thickness of 50 nm at a rate of 2 nm per minute. Thereafter, as the source and drain electrodes 60, gold was vacuum-deposited using a nickel mask so as to have a width of 100 μm and a thickness of 0.05 μm.

At this time, the distance between the source and the drain is 20 μm. In the device thus fabricated, the current flowing between the source and the drain when a gate bias was applied from the ITO gate electrode was measured. The voltage between the source and the drain was fixed at −80V, and the gate voltage was applied up to + 100V. Thereafter, the gate voltage was swept in steps to −100V, and then continuously swept to + 100V. The current _IDS flowing between the source and the drain after 1 second of the voltage step was measured. A measurement diagram at this time is shown in FIG. It has been confirmed that a history appears in the current curve, a memory property is expressed, and a larger memory property is obtained compared to the measurement in the atmosphere. At this time, compared to the case of the PMLG single thin film shown in Reference Example 1, the on-current was greatly increased and the off-current was also greatly decreased. In other words, it was confirmed that the on / off ratio of the memory signal can be increased at a lower voltage.

In order to confirm driving at a lower voltage, the voltage between the source and the drain was fixed at −20 V, and the change in the current history was observed. The gate voltage was initially applied to + 100V. Thereafter, the gate voltage was swept in steps to −100V, and then continuously swept to + 100V. The current _IDS flowing between the source and the drain after 1 second of the voltage step was measured. A measurement diagram at this time is shown in FIG. A history appeared in the current curve, and it was confirmed that memory performance was exhibited even under low voltage. At this time, it was confirmed that the on-current was greatly increased as compared with the case of the PMLG single thin film shown in Reference Example 1, and the on / off ratio of the memory signal could be increased at a lower voltage.

  The glass substrate 10 on which the ITO electrode patterned as the gate electrode 20 was manufactured was subjected to ultrasonic cleaning for 15 minutes with a neutral detergent (Iuchi Seieido Co., Ltd .: Puresoft (trade name)) diluted 5-fold with pure water. After that, ultrasonic cleaning was performed in pure water for 15 minutes to remove the detergent.

  Thereafter, the substrate was subjected to ultraviolet irradiation cleaning for 20 minutes in an oxygen atmosphere using an ultraviolet-ozone cleaner. On the substrate thus cleaned, as a dielectric layer 30, a mixture of poly (γ-methyl-L-glutamate) (PMLG) and polymethyl methacrylate (PMMA) (weight ratio, PMLG: PMMA = 8: From the mixed solution of dichloroethane and chloroform of 2), dip coating was performed at a rate of 1 cm / sec to form a PMLG-PMMA mixture thin film.

At this time, the thickness of the PMLG-PMMA mixture thin film is 400 nm. Next, a pentacene thin film was formed as a semiconductor active layer 40 from above by a vacuum deposition method. Pentacene was purified by sublimation purification 5 times. The vacuum deposition conditions were that the substrate was fixed above the deposition boat, the substrate temperature was adjusted to about 30 ° C., and the degree of vacuum was reduced to 2 × 10 ⁻⁶ Torr. Thereafter, vacuum deposition was performed to a thickness of 50 nm at a rate of 2 nm per minute. Thereafter, as the source and drain electrodes 60, gold was vacuum-deposited using a nickel mask so as to have a width of 100 μm and a thickness of 0.05 μm.

At this time, the distance between the source and the drain is 20 μm. In the device thus fabricated, the current flowing between the source and the drain when a gate bias was applied from the ITO gate electrode was measured. The voltage between the source and the drain was fixed at −10V, and the gate voltage was applied up to + 100V. Thereafter, the gate voltage was swept in steps to −100V, and then continuously swept to + 100V. The current _IDS flowing between the source and the drain after 1 second of the voltage step was measured. A measurement diagram at this time is shown in FIG. A history appeared in the current curve, and it was confirmed that memory characteristics were expressed.

Since the information recording element of the present invention can exhibit memory characteristics with a low driving voltage, it requires less power to operate. Since it is composed of organic semiconductor solid thin film and metal electrode, it is easy to manufacture and can be made into film element, large area element, flexible element, suitable for mass production, and has industrial utility value. high.

1 is a schematic cross-sectional view of an example of the structure of an information recording element in the present invention. The current-voltage characteristic at the time of the applied voltage -80V of the element produced in the reference example 1 of this invention. The current-voltage characteristic at the time of the applied voltage-20V of the element produced in the reference example 1 of this invention. The current-voltage characteristic at the time of applied voltage -80V of the element produced in Example 1 of this invention. The current-voltage characteristic at the time of the applied voltage -20V of the element produced in Example 1 of this invention. The current-voltage characteristic at the time of the applied voltage-10V of the element produced in Example 2 of this invention.

Explanation of symbols

10 A substrate 20 in an embodiment of the present invention A gate electrode 30 in an embodiment of the present invention A dielectric layer 40 in an embodiment of the present invention A semiconductor active layer 50 in an embodiment of the present invention A drain and source electrode in an embodiment of the present invention

Claims (6)

In an information recording element containing at least one organic thin film between an anode and a cathode, the thin film comprises a polymer compound having an α helix structure composed of a structural unit represented by the following general formula (Formula 1), and It includes a mixture of at least one organic polymer compound different from the polymer compound, and is prepared by coating and drying a solution in which the mixture is dissolved, and among the organic polymer compounds, at least one, the information recording device characterized Rukoto such a constituent unit represented by the general formula (2).


(In the formula, R ¹ is a hydrogen atom, a halogen atom, a hydroxyl group, a formyl group, a carboxyl group, a cyano group, a nitro group, an amino group, an amide group, a sulfonic acid group, an alkyl group, an alkenyl group, an alkoxy group, or a hydroxyalkyl. Group, acyl group, mercapto group, alkylthio group, carboxylalkyl group, alkylamino group, alkylamide group, alkylcarbonyl group, alkoxycarbonyl group, alkylcarbonyloxy group, fatty acid group, benzyl group, aromatic hydrocarbon group, aromatic A substituent selected from the group consisting of one or a plurality of heterocyclic groups, n is an integer of 10 or more, X and Y are each independently a hydrogen atom, a halogen atom, a hydroxyl group, a formyl group, a carboxyl group, Cyano group, nitro group, amino group, acyl group, sulfonic acid group, alkyl group, alkeni A substituent selected from the group consisting of one or more of an alkyl group, an alkoxy group, a hydroxyalkyl group, a carboxylalkyl group, an alkylcarbonyl group, an alkoxycarbonyl group, an alkylcarbonyloxy group, an aromatic hydrocarbon group, and an aromatic heterocyclic group Represents a group.)


Wherein R ² and R ³ are each independently a hydrogen atom, halogen atom, hydroxyl group, formyl group, carboxyl group, cyano group, nitro group, amino group, amide group, sulfonic acid group, alkyl group, alkenyl Group, alkoxy group, hydroxyalkyl group, acyl group, mercapto group, alkylthio group, carboxylalkyl group, alkylamino group, alkylamide group, alkylcarbonyl group, alkoxycarbonyl group, alkylcarbonyloxy group, fatty acid group, benzyl group, aromatic A substituent selected from the group consisting of one or more of an aromatic hydrocarbon group and an aromatic heterocyclic group, n is an integer of 10 or more, X and Y are each independently a hydrogen atom, a halogen atom, a hydroxyl group Group, formyl group, carboxyl group, cyano group, nitro group, amino group, acyl group, sulfone A group, an alkyl group, an alkenyl group, an alkoxy group, a hydroxyalkyl group, a carboxylalkyl group, an alkylcarbonyl group, an alkoxycarbonyl group, an alkylcarbonyloxy group, an aromatic hydrocarbon group, or an aromatic heterocyclic group. Represents a substituent selected from the group.) The information recording element according to claim 1, wherein the polymer compound represented by the general formula (Formula 1) has an amino acid as a repeating unit, and R ¹ is the same or different in the amino acid. The amino acid according to claim 2 is glycine, alanine, phenylalanine, valine, leucine, isoleucine, proline, methionine, lysine, arginine, serine, threonine, tyrosine, histidine, cysteine, asparagine, aspartic acid, glutamine, glutamic acid, tryptophan. An information recording element selected from the above. The information recording element according to claim 1, wherein the organic polymer compound is polyalkyl acrylate or polyalkyl methacrylate.   An information recording element comprising a field effect transistor having a gate electrode, a dielectric layer, a semiconductor layer, a drain and a source electrode on a substrate, wherein the dielectric layer is composed of the mixture according to claim 1. An information recording element. 6. The information recording element according to claim 5 , wherein the semiconductor layer is made of an organic semiconductor material.