JP4893729B2 - Film forming method, film forming apparatus, and storage medium - Google Patents

Description

  The present invention relates to a film forming method for forming a thin film on an object to be processed such as a semiconductor wafer, a film forming apparatus, and a storage medium for storing a program for controlling the film forming apparatus by a computer.

  Generally, in order to manufacture a semiconductor integrated circuit, various processes such as a film formation process, an etching process, an oxidation process, a diffusion process, a modification process, and a natural oxide film removal process are performed on a semiconductor wafer made of a silicon substrate or the like. Is done. When these processes are performed in a so-called batch-type heat treatment apparatus disclosed in Patent Document 1 or the like, first, a semiconductor wafer is removed from a cassette that can accommodate a plurality of, for example, about 25 semiconductor wafers. It is transferred to a vertical wafer boat and is supported in multiple stages. This wafer boat can place about 30 to 150 wafers, for example, depending on the wafer size. After the wafer boat is loaded (loaded) into the evacuable processing container from below, the inside of the processing container is kept airtight. Then, a predetermined heat treatment is performed while controlling various process conditions such as the flow rate of process gas, process pressure, and process temperature.

Here, as one of the factors for improving the characteristics of the semiconductor integrated circuit, it is important to improve the characteristics of the insulating film in the integrated circuit. As the insulating film in the integrated circuit, generally, SiO ₂ , PSG (Phospho Silicate Glass), P (plasma) -SiO, P (plasma) -SiN, SOG (Spin On Glass), Si ₃ N ₄ ( Silicon nitride film) or the like is used. In particular, the silicon nitride film tends to be frequently used because its insulating characteristics are relatively better than that of the silicon oxide film and it functions sufficiently as an etching stopper film and an interlayer insulating film. For the same reason, boron nitride films tend to be used.

In order to form a silicon nitride film as described above on the surface of a semiconductor wafer, monosilane (SiH ₄ ), dichlorosilane (SiH ₂ Cl ₂ ), hexachlorodisilane (Si ₂ Cl ₆ ), bis-tertiary butylaminosilane ( A method of forming a film by thermal CVD (Chemical Vapor Deposition) using a silane-based gas such as BTBAS is known. Specifically, when depositing a silicon nitride film, the silicon nitride film is formed by thermal CVD using a combination of gases such as SiH ₂ Cl ₂ + NH ₃ (see Patent Document 1) or Si ₂ Cl ₆ + NH _3. Yes.
In order to reduce the dielectric constant of the insulating film, a proposal has been made to form an insulating film by adding, for example, boron (B) as an impurity to the silicon nitride film (Patent Document 2).

  Recently, there is a strong demand for further integration and miniaturization of semiconductor integrated circuits, and the thermal history in the manufacturing process of semiconductor integrated circuits is also reduced for the purpose of improving the characteristics of circuit elements. It is hoped that. Under such circumstances, even in a vertical type, so-called batch type vertical processing apparatus, the target processing is possible without exposing the wafer to such a high temperature. There is known a method of repeatedly forming one to several layers at the atomic level or one to several layers at the molecular level while supplying (Patent Documents 3, 4, etc.). Such a film forming method is generally referred to as ALD (Atomic Layer Deposition).

Here, as a conventional film forming method, a silicon nitride film (SiN) is formed using dichlorosilane (hereinafter also referred to as “DCS”) which is a silane-based gas and NH ₃ gas which is a nitriding gas. Specifically, DCS and NH ₃ gas are alternately and intermittently supplied into the processing vessel, and when NH ₃ gas is supplied, RF (radio frequency) is applied to generate plasma to promote the nitriding reaction. I have to. In this case, by supplying DCS into the processing vessel, DCS is adsorbed on the wafer surface in one or more layers at the molecular level, and excess DCS is removed by inert gas purging or evacuation, and then NH ₃ The plasma is generated to promote nitridation at a low temperature to form a nitride film, and this series of steps is repeated.

JP-A-6-275608 Japanese Patent Laid-Open No. 2-93071 JP-A-6-45256 Japanese Patent Application Laid-Open No. 11-87341

By the way, after forming the insulating film as described above, when another thin film is formed thereon, there is a possibility that contaminants such as organic substances and particles adhere to the surface of the insulating film. For the purpose of removing this contaminant, the surface of the insulating film is etched very thinly by immersing the semiconductor wafer in a cleaning solution such as dilute hydrofluoric acid, thereby removing the contaminant. A cleaning process may be performed.
However, in this case, when the insulating film is formed by high-temperature thermal CVD of about 760 ° C., for example, the etching rate at the time of cleaning of the insulating film formed by such high-temperature thermal CVD is considerably small. Sometimes this insulating film is not excessively scraped off, and the cleaning process can be performed with good controllability of the film thickness, but if a thin film with low heat resistance is formed on the underlayer, Thermal CVD process cannot be adopted.

On the other hand, when the ALD film is formed at a temperature as low as about 400 ° C., for example, the etching rate for cleaning the insulating film formed at such a low temperature is considerably high. There is a problem that the film thickness is excessively scraped off and the controllability of the film thickness during the cleaning process is poor. In addition, as described above, this silicon nitride film may be used as an insulating film such as an etching stopper film or an interlayer insulating film. In this case, it is necessary to sufficiently reduce the etching rate. This request was not fully met.
The present invention has been devised to pay attention to the above problems and to effectively solve them. It is an object of the present invention to reduce the etching rate during cleaning even if the film is formed at a relatively low temperature, thereby improving the controllability of the film thickness during cleaning, and to provide an etching stopper film and an interlayer insulating film. It is an object of the present invention to provide a film formation method, a film formation apparatus, and a storage medium that can form an insulating film that sufficiently functions as an insulating film. The present invention is an improved invention of the invention disclosed in Japanese Patent Application No. 2002-38826 (Japanese Patent Laid-Open No. 2003-282666) filed earlier by the present applicant.

According to the first aspect of the present invention, a surface of the object to be processed is supplied by supplying a silane-based gas, a nitriding gas, and a hydrocarbon gas into a processing container in which a plurality of objects to be processed are accommodated and evacuated. In the film forming method for forming the SiCN thin film on the substrate, the simultaneous supply of the two types of silane-based gas and hydrocarbon gas and the supply of the nitriding gas are performed intermittently and alternately and plasma is not used. And forming the thin film .
In this manner, the SiCN film (silicon carbon nitride film) is formed by intermittently and alternately supplying the two types of gas, the silane-based gas and the hydrocarbon gas, and the nitriding gas. As a result, even if the film is formed at a relatively low temperature, the etching rate at the time of cleaning can be made relatively small, so that the controllability of the film thickness at the time of cleaning can be improved, and an etching stopper film, an interlayer insulating film, etc. An insulating film that functions sufficiently as an insulating film can be formed.

According to a second aspect of the present invention, a nitriding gas, a boron-containing gas, and a hydrocarbon gas are supplied into a processing container in which a plurality of objects to be processed are accommodated so as to be evacuated. In the film forming method for forming a BCN thin film, the simultaneous supply of the two kinds of gases, the boron-containing gas and the hydrocarbon gas, and the supply of the nitriding gas are performed intermittently and alternately. This is a film forming method.
As described above, the BCN film (boron / carbon nitride film) is formed by intermittently and alternately supplying the boron-containing gas and the hydrocarbon gas simultaneously and the nitriding gas. As a result, even if the film is formed at a relatively low temperature, the etching rate at the time of cleaning can be made relatively small, so that the controllability of the film thickness at the time of cleaning can be improved, and an etching stopper film, an interlayer insulating film, etc. An insulating film that functions sufficiently as an insulating film can be formed.

In this case, as specified for example in請Motomeko 3, the intermittent period between the time of supply of feed during said nitriding gas of the hydrocarbon gas, the processing vessel and that are inert gas purge All gas supply is stopped and / or evacuated.

According to a fourth aspect of the present invention, a silane-based gas, a nitriding gas, a boron-containing gas, and a hydrocarbon gas are supplied into a processing container in which a plurality of objects to be processed are accommodated so as to be evacuated. In a film forming method for forming a thin film on the surface of a processing body, a first step of simultaneously supplying two types of gas, the silane-based gas and a boron-containing gas, for a short time, and supplying the nitriding gas for a short time to produce SiBN A second step of forming a thin film; a third step of simultaneously supplying two types of gas, the silane-based gas and the hydrocarbon gas, for a short time; and a step of forming a SiCN thin film by supplying the nitriding gas for a short time. The film forming method is characterized in that the four steps are repeated once or a plurality of times according to the order of the first step, the second step, the third step, and the fourth step .

  As described above, the first step of simultaneously supplying the two types of gas, the silane-based gas and the boron-containing gas, for a short time, the second step of forming the SiBN thin film by supplying the nitriding gas for a short time, A third step of simultaneously supplying two types of gases, a silane-based gas and a hydrocarbon gas, for a short period of time and a fourth step of forming the SiCN thin film by supplying the nitriding gas for a short period of time are performed once according to the above order Alternatively, a laminated structure of a SiBN film (silicon / boron nitride film) and a SiCN film (silicon / carbon nitride film) is formed by repeating a plurality of times. The etching rate at the time can be made relatively small, the controllability of the film thickness during cleaning can be improved, and it is sufficient as an insulating film such as an etching stopper film or an interlayer insulating film It is possible to form the ability to insulate film.

In this case, for example, as defined in claim 5, the inside of the processing vessel is purged with an inert gas during an intermittent period between the supply of the silane-based gas and the supply of the nitriding gas. Alternatively, the supply of all gas is stopped and the vacuum is drawn .
Also as defined in claim 6 In example embodiment, the temperature during the deposition of the thin film is in the range of 300 ° C. to 700 ° C..

Also for example, as prescribed in claim 7, the pressure during film formation of the thin film is in the range of 13Pa (0.1Torr) ~13300Pa (100Torr) .
For example , as defined in claim 8, the silane-based gas is dichlorosilane (DCS), hexachlorodisilane (HCD), monosilane [SiH ₄ ], disilane [Si ₂ H ₆ ], hexamethyldisilazane (HMDS). And one or more gases selected from the group consisting of tetrachlorosilane (TCS), disilylamine (DSA), trisilylamine (TSA), and binary butylaminosilane (BTBAS).

For example , as defined in claim 9, the nitriding gas is selected from the group consisting of ammonia [NH ₃ ], nitrogen [N ₂ ], dinitrogen monoxide [N ₂ O], and nitric oxide [NO]. One or more gases.
For example , as defined in claim 10, the boron-containing gas is one or more gases selected from the group consisting of BCl ₃ , B ₂ H ₆ , BF ₃ , and B (CH ₃ ) ₃ .
For example , as defined in claim 11, the hydrocarbon gas is one or more gases selected from the group consisting of acetylene, ethylene, methane, ethane, propane, and butane.

According to a twelfth aspect of the present invention, there is provided a film forming apparatus for forming a predetermined thin film on an object to be processed, a vertical cylindrical processing container that is evacuated, and a plurality of the objects to be processed A holding means which is held in a stage and inserted into and removed from the processing container; a heating means provided on an outer periphery of the processing container; a silane-based gas supply means for supplying a silane-based gas into the processing container; and the processing a nitriding gas supply means for supplying a nitriding gas into the container, and a hydrocarbon gas supply means for supplying a hydrocarbon gas into the processing container, and the silane-based gas and the simultaneous supply of two gases of hydrocarbon gas A film forming apparatus comprising: a control unit configured to intermittently and alternately supply the nitriding gas and control to form the thin film without using plasma.

According to a thirteenth aspect of the present invention, in a film forming apparatus for forming a predetermined thin film on an object to be processed, a plurality of vertical cylindrical processing containers that can be evacuated and a plurality of the objects to be processed Holding means that is held in stages and inserted into and removed from the processing container; heating means provided on the outer periphery of the processing container; nitriding gas supply means for supplying a nitriding gas into the processing container; and inside the processing container wherein the boron-containing gas supply means for supplying a boron-containing gas, a hydrocarbon gas supply means for supplying a hydrocarbon gas into the processing container, and the boron-containing gas and the simultaneous supply of two gases of hydrocarbon gas to And a control unit that controls to supply the nitriding gas intermittently and alternately.

According to a fourteenth aspect of the present invention, there is provided a film forming apparatus for forming a predetermined thin film on an object to be processed, a vertical cylindrical processing container that can be evacuated and a plurality of the objects to be processed. A holding means which is held in a stage and inserted into and removed from the processing container; a heating means provided on an outer periphery of the processing container; a silane-based gas supply means for supplying a silane-based gas into the processing container; and the processing A nitriding gas supply means for supplying a nitriding gas into the container, a boron-containing gas supply means for supplying a boron-containing gas into the processing container, and a hydrocarbon gas supply means for supplying a hydrocarbon gas into the processing container ; two first step short time simultaneously supplying a gas of the Sila emissions-based gas and a boron-containing gas carbonization, the second step of forming a SiBN thin film by supplying a short time the nitriding gas, and said silane gas Two types of hydrogen gas The gas is supplied only briefly short time co-fed third step and the nitriding gas and fourth step and said first step of forming a SiCN thin film and the second step and the third step second And a control unit that performs control so as to be repeated once or a plurality of times according to the order of the four steps .

In this case, for example , as defined in claim 15, the activating means is integrally incorporated in the processing container.

According to the sixteenth aspect of the present invention, a silane-based gas, a nitriding gas, and a hydrocarbon gas are supplied into a processing container in which a plurality of objects to be processed are accommodated and evacuated, and plasma is not used. When forming a thin film using a film forming apparatus configured to form a SiCN thin film on the surface of an object to be processed, the simultaneous supply of the two gases, the silane-based gas and the hydrocarbon gas, and the supply of the nitriding gas are performed. A storage medium storing a program for controlling the film forming apparatus so as to be intermittently and alternately performed.
According to a seventeenth aspect of the present invention, a nitriding gas, a boron-containing gas, and a hydrocarbon gas are supplied into a processing container in which a plurality of objects to be processed are accommodated so as to be evacuated. When forming a thin film using a film forming apparatus for forming a BCN thin film on the substrate, the simultaneous supply of the boron-containing gas and the hydrocarbon gas and the supply of the nitriding gas are intermittently and alternately performed. A storage medium storing a program for controlling the film forming apparatus as described above.

According to an eighteenth aspect of the present invention, a silane-based gas, a nitriding gas, a boron-containing gas, and a hydrocarbon gas are supplied into a processing container in which a plurality of objects to be processed are accommodated so as to be evacuated. A first step of simultaneously supplying the silane-based gas and the boron-containing gas for a short time when forming a thin film using a film forming apparatus configured to form a thin film on the surface of the treatment body; A second step of forming a SiBN thin film by supplying a nitriding gas only for a short time; a third step of simultaneously supplying two types of gases, the silane-based gas and the hydrocarbon gas, for a short time; and the nitriding gas for a short time. The fourth step of forming the SiCN thin film by supplying only the first film, the second step, the third step, and the fourth step are performed once or a plurality of times according to the order of the fourth step. The program that controls the device A storage medium characterized by storing.

  According to the film forming method, the film forming apparatus, and the storage medium for storing the program for controlling the computer according to the present invention, the etching rate at the time of cleaning can be relatively reduced even when the film is formed at a relatively low temperature. Thus, it is possible to improve the controllability of the film thickness and to form an insulating film that sufficiently functions as an insulating film such as an etching stopper film or an interlayer insulating film.

Hereinafter, an embodiment of a film forming method, a film forming apparatus, and a storage medium according to the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a longitudinal sectional view showing an example of a film forming apparatus according to the present invention, and FIG. 2 is a transverse sectional view showing a film forming apparatus (heating means is omitted). Here, dichlorosilane (DCS) is used as the silane gas, ammonia gas (NH ₃ ) is used as the nitriding gas, BCl ₃ gas is used as the boron-containing gas, and C ₂ H ₄ gas (ethylene gas) is used as the hydrocarbon gas. ) And the NH ₃ gas is activated by plasma to form various carbon-containing films. In addition, all gas supply means used in each embodiment of the method of the present invention to be described later will be described. However, depending on the embodiment, there are gas types that are not used. Of course, the supply means becomes unnecessary.

As shown in the figure, this film forming apparatus 2 capable of forming plasma has a cylindrical processing container 4 having a ceiling with a lower end opened. The entire processing container 4 is made of, for example, quartz, and a ceiling plate 6 made of quartz is provided on the ceiling in the processing container 4 and sealed. Further, a manifold 8 formed in a cylindrical shape by, for example, stainless steel is connected to a lower end opening of the processing container 4 via a seal member 10 such as an O-ring. There is also an apparatus in which a stainless steel manifold 8 is not provided and the whole is formed of a cylindrical quartz processing container.
The lower end of the processing vessel 4 is supported by the manifold 8, and a quartz wafer boat 12 as a holding means on which a plurality of semiconductor wafers W as processing objects are placed in multiple stages from below the manifold 8. Is made detachable so that it can be raised and lowered. In the case of the present embodiment, for example, about 50 to 100 wafers 300 having a diameter of 300 mm can be supported in multiple stages at substantially equal pitches on the support 12A of the wafer boat 12.

The wafer boat 12 is placed on a table 16 via a quartz heat insulating cylinder 14, and the table 16 penetrates a lid 18 made of, for example, stainless steel that opens and closes the lower end opening of the manifold 8. It is supported on the rotating shaft 20.
For example, a magnetic fluid seal 22 is interposed in the penetrating portion of the rotating shaft 20, and the rotating shaft 20 is rotatably supported while hermetically sealing. In addition, a sealing member 24 made of, for example, an O-ring is interposed between the peripheral portion of the lid portion 18 and the lower end portion of the manifold 8 to maintain the sealing performance in the processing container 4.
The rotating shaft 20 is attached to the tip of an arm 26 supported by an elevating mechanism (not shown) such as a boat elevator, for example, and moves up and down integrally with the wafer boat 12, the lid 18 and the like. 4 can be inserted and removed. The table 16 may be fixed to the lid 18 side and the wafer W may be processed without rotating the wafer boat 12.

In the manifold 8, a nitriding gas supply means 28 for supplying ammonia (NH ₃ ) gas, for example, as a nitriding gas that is converted into plasma toward the inside of the processing container 4, and a silane-based gas, for example, DCS (film forming gas) (Silane-based gas supply means 30 for supplying dichlorosilane) gas, boron-containing gas supply means 32 for supplying BCl ₃ gas, for example, as a boron-containing gas, and C ₂ H ₄ (ethylene) gas, for example, as a hydrocarbon gas A hydrocarbon gas supply means 34 and a purge gas supply means 36 for supplying an inert gas such as N ₂ gas as a purge gas are provided. Specifically, the nitriding gas supply means 28 has a gas dispersion nozzle 38 made of a quartz tube that extends inwardly through the side wall of the manifold 8. A plurality (a large number) of gas injection holes 38A are formed at a predetermined interval along the length direction of the gas dispersion nozzle 38, and the gas distribution nozzles 38 are substantially uniform from the gas injection holes 38A in the horizontal direction. Ammonia gas can be injected.

Similarly, the silane-based gas supply means 30 also has a gas dispersion nozzle 40 made of a quartz tube that extends inwardly through the side wall of the manifold 8. In the gas dispersion nozzle 40, a plurality (a large number) of gas injection holes 40A are formed at a predetermined interval along the length direction thereof. The gas distribution nozzles 40 are substantially uniform from the gas injection holes 40A in the horizontal direction. A DCS gas that is a silane-based gas can be injected. Similarly, the boron-containing gas supply means 32 also has a gas dispersion nozzle 42 made of a quartz tube that extends inwardly through the side wall of the manifold 8. The gas dispersion nozzle 42 is formed with a plurality (a large number) of gas injection holes 42A (see FIG. 2) at predetermined intervals along the length direction thereof, like the gas dispersion nozzle 40 for the silane-based gas. The BCl ₃ gas can be injected substantially uniformly from the gas injection holes 42A in the horizontal direction.

Similarly, the hydrocarbon gas supply means 34 also has a gas dispersion nozzle 44 made of a quartz tube that extends inwardly through the side wall of the manifold 8. In the gas dispersion nozzle 44, a plurality of (many) gas injection holes 44A (see FIG. 2) are formed at predetermined intervals along the length direction, like the gas dispersion nozzle 44 of the silane-based gas. Thus, the C ₂ H ₄ gas can be injected substantially uniformly from the gas injection holes 44A in the horizontal direction.

As described above, when there is a gas unnecessary for the film forming process described later, among these four gas types, the gas supply means is connected to the film forming apparatus when performing such a film forming process. Of course, it is not necessary to provide it. Similarly, the purge gas supply means 36 has a gas nozzle 46 provided through the side wall of the manifold 8. Respective gas passages 48, 50, 52, 54, 56 are connected to the nozzles 38, 40, 42, 44, 46. The gas passages 48, 50, 52, 54, 56 are provided with on-off valves 48A, 50A, 52A, 54A, 56A and flow rate controllers 48B, 50B, 52B, 54B, 56B such as mass flow controllers, respectively. Thus, NH ₃ gas, DCS gas, BCl ₃ gas, C ₂ H ₄ gas, and N ₂ gas can be supplied while controlling the flow rate. Supply of these gases, supply stop, control of gas flow rate, high frequency on / off control, which will be described later, and the like are performed by a control means 60 such as a computer. In addition to the above control, the control means 60 also controls the operation of the entire apparatus. The control means 60 has a storage medium 62 such as a floppy disk or a flash memory in which a program for performing the above control is stored.

  On the other hand, an activation means 66 that activates a nitriding gas by generating plasma along the height direction is formed on a part of the side wall of the processing vessel 4 and faces the activation means 66. On the opposite side of the processing container 4, there is provided an elongated exhaust port 68 formed by scraping the side wall of the processing container 4 in the vertical direction, for example, in order to evacuate the internal atmosphere. Specifically, the activation means 66 forms an elongated opening 70 in the vertical direction by scraping the side wall of the processing container 4 with a predetermined width along the vertical direction, and covers the opening 70 from the outside. In this manner, the plasma partition wall 72 made of, for example, quartz, which has a concave shape in the cross section and is vertically welded to the outer wall of the container, is welded and joined. As a result, a part of the side wall of the processing container 4 is recessed outward in the shape of a recess so that the activating means 66 having one side opened into the processing container 4 and communicated therewith is integrally formed. That is, the internal space of the plasma partition wall 72 is in a state of being integrally communicated with the processing container 4. The opening 70 is formed long enough in the vertical direction so as to cover all the wafers W held by the wafer boat 12 in the height direction.

A pair of elongated plasma electrodes 74 are provided on the outer surfaces of both side walls of the plasma partition wall 72 so as to face each other along the length direction (vertical direction). A high frequency power source 76 for plasma generation is connected via a power supply line 78, and plasma can be generated by applying a high frequency voltage of 13.56 MHz to the plasma electrode 74, for example. The frequency of the high-frequency voltage is not limited to 13.56 MHz, and other frequencies such as 400 kHz may be used.
Then, the gas dispersion nozzle 38 for nitriding gas extending upward in the processing container 4 is bent in the radial direction of the processing container 4 in the middle, so that the innermost part of the plasma partition wall 72 (processing It is located at the farthest part from the center of the container 4) and is provided to stand upward along this innermost part. Therefore, when the high-frequency power source 76 is turned on, the ammonia gas injected from the gas injection hole 38A of the gas dispersion nozzle 38 is activated here and flows while diffusing toward the center of the processing container 4. Yes.

An insulating protective cover 80 made of, for example, quartz is attached to the outside of the plasma partition wall 72 so as to cover it. In addition, a refrigerant passage (not shown) is provided in an inner portion of the insulating protective cover 80 so that the plasma electrode 74 can be cooled by flowing a cooled nitrogen gas or cooling water.
In the vicinity of the outside of the opening 70 of the plasma partition wall 72, that is, outside the opening 70 (inside the processing vessel 4), the gas dispersion nozzle 40 for the silane-based gas, the gas dispersion nozzle 42 for the boron-containing gas, and the hydrocarbon. A gas dispersion nozzle 44 for gas is provided upright, and a silane-based gas is directed toward the center of the processing vessel 4 from the gas injection holes 40A, 42A, 44A provided in the nozzles 40, 42, 44. And BCl ₃ gas and C ₂ H ₄ gas can be injected, respectively.

  On the other hand, an exhaust port cover member 82 formed in a U-shaped cross section made of quartz is attached to the exhaust port 68 provided to face the opening 70 by welding so as to cover it. The exhaust port cover member 82 extends upward along the side wall of the processing container 4 and is evacuated from a gas outlet 84 above the processing container 4 by a vacuum exhaust system provided with a vacuum pump (not shown). . A cylindrical heating means 86 for heating the processing container 4 and the wafer W inside the processing container 4 is provided so as to surround the outer periphery of the processing container 4.

Next, a film forming method (so-called ALD film forming) of the present invention using plasma performed using the film forming apparatus 2 configured as described above will be described.
<First Example of Film Formation Method>
First, a first embodiment of the method of the present invention will be described.
FIG. 3 is a timing chart showing the supply timing of various gases and the application timing of RF (high frequency) in the first embodiment of the film forming method of the present invention. In this first embodiment, a SiBCN thin film is formed on a semiconductor wafer using a silane-based gas (DCS), a nitriding gas (NH ₃ ), a boron-containing gas (BCl ₃ ), and a hydrocarbon gas (C ₂ H ₄ ). . That is, in this first embodiment, the simultaneous supply of the three types of gas, the silane-based gas, the boron-containing gas, and the hydrocarbon gas, and the supply of the nitriding gas are performed intermittently and alternately.
First, a wafer boat 12 on which a large number of normal temperature wafers, for example, 50 to 100 wafers 300 mm in size are placed, is loaded into the processing container 4 that has been set to a predetermined temperature by raising it from below. The inside of the container is sealed by closing the lower end opening of the manifold 8 with the lid 18.

Then, the inside of the processing container 4 is evacuated and maintained at a predetermined process pressure, and the power supplied to the heating means 86 is increased to raise the wafer temperature and maintain the process temperature. The DCS gas is supplied from the silane-based gas supply means 30, the BCl ₃ gas is supplied from the boron-containing gas supply means 32, the C ₂ H ₄ gas is supplied from the hydrocarbon gas 34, and the NH ₃ gas is supplied as the nitriding gas. Supply from the supply means 28. Specifically, as shown in FIG. 3, the simultaneous supply of three kinds of gases, DCS gas, BCl ₃ gas, and C ₂ H ₄ gas, and the supply of NH ₃ gas are performed intermittently and alternately. To do. Thus, a SiBCN thin film is formed on the surface of the wafer W supported by the rotating wafer boat 12. At this time, when the NH ₃ gas is supplied alone, plasma is generated by turning on the high frequency power source (RF power source) 62 over the entire supply time or during a part of the total supply time. In FIG. 3E, a high frequency is applied after a predetermined time has elapsed from the start of the supply of NH ₃ gas.

Specifically, NH ₃ gas is injected in the horizontal direction from each gas injection hole 38A of the gas dispersion nozzle 38, DCS gas is injected in the horizontal direction from each gas injection hole 40A of the gas dispersion nozzle 40, and BCl ₃ is injected in the horizontal direction from each gas injection hole 42A of the gas dispersion nozzle 42, and C ₂ H ₄ gas is injected in the horizontal direction from each gas injection hole 44A in the gas dispersion nozzle 44, and each gas reacts to react with SiBCN. A thin film is formed. In this case, the above gases are not continuously supplied, but as shown in FIG. 3, DCS, BCl ₃ and C ₂ H ₄ gases are intermittently supplied in the form of pulses at the same timing. The NH ₃ gas is supplied when the supply of the three types of gas is stopped with the timing shifted from the supply of the three types of gas. Gases with different timings are alternately and repeatedly supplied with an intermittent period (purge period) 90 between them, and the SiBCN thin films are repeatedly laminated one by one. That is, as shown in FIGS. 3A, 3C, and 3D, DCS, BCl ₃ and C ₂ H ₄ are always supplied intermittently at the same timing. On the other hand, as shown in FIG. 3 (B), NH ₃ is supplied independently at substantially the center of the supply stop period of the DCS, BCl ₃ , and C ₂ H ₄ gases. Further, during the intermittent period 90, evacuation is continued to remove the gas remaining in the container. Then, when the NH ₃ gas is allowed to flow alone, as shown in FIG. 3 (E), the RF power is turned on to generate plasma, and the supplied NH ₃ gas is activated to produce active species and the like. (Decomposition) is promoted.

In this case, the RF power supply may be turned on over the entire NH ₃ gas supply period, or as shown in FIGS. 3B and 3E, a predetermined time from the start of supply of the NH ₃ gas. The RF power supply may be turned on after Δt has elapsed. The predetermined time Δt is a time until the flow rate of the NH ₃ gas is stabilized, and is about 5 seconds, for example. Thus, by turning on the RF power supply after the flow rate of the NH ₃ gas is stabilized, the concentration uniformity of the active species in the inter-plane direction (height direction) of the wafer W can be improved. In the intermittent period 90, N ₂ gas, which is an inert gas, may be supplied into the processing vessel 4 to eliminate residual gas (inert gas purge), or all gas supply is stopped. Residual gas in the processing container 4 may be removed by continuously performing vacuuming (also referred to as vacuum). Furthermore, the vacuum may be performed in the first half of the intermittent period 90 and the inert gas purge may be performed in the second half.

In this case, the supply period T1 of DCS, BCl ₃ and C ₂ H ₄ gas as an adsorption process is about 10 seconds, the supply period T2 of a single NH ₃ gas as a reaction process (nitriding process) is about 20 seconds, and a purge period The length T3 of the intermittent period 90 is about 5 to 15 seconds and the on-time T4 of the RF power source is about 10 seconds. However, these times are merely examples, and are not limited to these values. Usually, the film thickness formed in one cycle is about 1.1 to 1.3 mm / cycle, so if the target film thickness is 700 mm, for example, the process is repeated about 600 cycles. By performing the film formation process as described above, the dielectric constant of the formed SiBCN thin film can be made extremely low, and the etching resistance during dry etching can be greatly improved.
The reason is considered as follows. That is, generally, when boron is added to a silicon nitride film (SiN), the etching resistance is deteriorated. However, when NH ₃ gas is further activated by plasma when NH ₃ gas is supplied as in the above embodiment, nitridation occurs. As a result of promotion, it is considered that Si—H bonds are decreased and Si—N bonds having strong etching resistance are increased.

Further, as described above, when a silicon nitride film is formed, by supplying, for example, C ₂ H ₄ gas as a hydrocarbon gas into the processing vessel 8, carbon components are formed in the film formed on the wafer surface. It becomes a contained state. Thus, when a carbon component is contained in the film, the film is formed at a temperature lower than the conventional film formation temperature, for example, about 760 ° C., for example, 550 ° C. The etching rate for dilute hydrofluoric acid used during the treatment can be reduced. As a result, the thin film can be prevented from being excessively scraped off during the cleaning treatment, and the controllability of the film thickness can be improved. Also, it can sufficiently function as an etching stopper film and an interlayer insulating film.

Further, since the DCS gas is intermittently supplied and the intermittent period T3 is intermittently provided, the surface of the SiBCN film formed immediately before each intermittent period T3 is modified in the intermittent period T3, and the film quality is improved. Since it improves, an etching rate can be suppressed further. The action at the atomic level during this intermittent treatment is considered as follows. That is, at the time of forming a SiBCN film containing carbon atoms, Cl atoms that could not be detached during deposition or deposition in the DCS gas are bonded to the outermost surface of the thin film in an activated state. In the intermittent period T3, C atoms and N atoms in the C ₂ H ₄ gas and the NH ₃ gas are replaced with Cl atoms on the outermost surface of the thin film, thereby providing a Cl component in the film. As a result, the etching rate can be suppressed, and in particular, the amount of C atoms taken into the film is increased by using C ₂ H ₄ gas, so that the etching rate can be further suppressed. .
Further, when boron and carbon are added to the silicon nitride film, the film formation rate can be increased by about 20 to 30% as compared with the case where boron and carbon are not added. The reason for this is considered that the addition of carbon promotes the adsorption of boron to the wafer surface.

Here, the process conditions of the film forming process will be described. The flow rate of DCS gas is in the range of 50 to 2000 sccm, for example, 1000 sccm (1 slm), and the flow rate of NH ₃ gas is in the range of 500 to 5000 sccm, for example, 1000 sccm. The flow rate of BCl ₃ gas is in the range of 1-15 sccm, for example 4 sccm, and the flow rate of C ₂ H ₄ gas is in the range of 200-2000 sccm, for example 500 sccm. Here, the flow rate of the C ₂ H ₄ gas is not more than 3 times the flow rate of the DCS gas. The reason is that if the flow rate of the C ₂ H ₄ gas, which is a hydrocarbon gas, is excessively large, there is a disadvantage that the film quality deteriorates rapidly.

Further, the process temperature is lower than the CVD film forming treatment, and specifically, is in the range of 300 to 700 ° C, preferably in the range of 550 to 630 ° C. When the process temperature is lower than 300 ° C., no reaction occurs and almost no film is deposited. When the process temperature is higher than 700 ° C., not only a CVD deposited film with poor film quality is formed, but also The metal film already formed in the process will be thermally damaged.
The process pressure is in the range of 13 Pa (0.1 Torr) to 13300 Pa (100 Torr), preferably in the range of 40 Pa (0.3 Torr) to 266 Pa (2 Torr). For example, in the adsorption process, 1 Torr, in the nitriding process using plasma, 0.3 Torr. Here, when the process pressure is smaller than 13 Pa, the film forming rate becomes below the practical level. Further, since the reaction with respect to the wafer W is mainly an adsorption reaction up to a process pressure of 13300 Pa, a thin film having a good film quality can be stably deposited at a high film formation rate, and a good result can be obtained.
However, if the process pressure becomes higher than 13300 Pa, the reaction form shifts from an adsorption reaction to a gas phase reaction, and this gas phase reaction becomes the mainstream. As a result, only the inter-surface and in-plane uniformity of the film thickness decreases. In addition, the particles resulting from the gas phase reaction increase rapidly, which is not preferable.

<Second Example of Film Formation Method>
Next, a second embodiment of the film forming method of the present invention will be described.
FIG. 4 is a timing chart showing various gas supply timings and RF (high frequency) application timings in the second embodiment of the film forming method of the present invention.
In this second embodiment, a SiCN thin film (carbon-containing silicon nitride film) is formed on a semiconductor wafer using a silane-based gas (DCS), a nitriding gas (NH ₃ ), and a hydrocarbon gas (C ₂ H ₄ ). That is, in the second embodiment, the simultaneous supply of the two types of gas, the silane-based gas and the hydrocarbon gas, and the supply of the nitriding gas are performed intermittently and alternately.

This second embodiment corresponds to a method in which film formation is performed in such a manner that the supply of BCl ₃ gas, which is a boron-containing gas, is not performed at all in the first embodiment shown in FIG. Boron (B) is not added. Therefore, when performing the second embodiment, the boron-containing gas supply means 32 is not necessary in the film forming apparatus shown in FIG. The process conditions of the second embodiment are the same as those of the first embodiment except for the conditions relating to the boron-containing gas.
Also in the case of the second embodiment, since the carbon component is contained in the silicon nitride film, similarly to the case of the first embodiment, a temperature lower than a conventional film forming temperature, for example, about 760 ° C. For example, despite the fact that the film was formed at 550 ° C., the etching rate for dilute hydrofluoric acid used during the cleaning process or etching process of the surface can be reduced, and as a result, the thin film is excessively scraped off during the cleaning process. Therefore, the controllability of the film thickness can be improved. Also, it can sufficiently function as an etching stopper film and an interlayer insulating film.

<Third Example of Film Formation Method>
Next, a third embodiment of the film forming method of the present invention will be described.
FIG. 5 is a timing chart showing various gas supply timings and RF (high frequency) application timings in the third embodiment of the film forming method of the present invention.
In the third embodiment, a BCN thin film (carbon-containing boron nitride film) is formed on a semiconductor wafer using a nitriding gas (NH ₃ ), a boron-containing gas, and a hydrocarbon gas (C ₂ H ₄ ). That is, in the third embodiment, the simultaneous supply of the two kinds of gases, the boron-containing gas and the hydrocarbon gas, and the supply of the nitriding gas are performed intermittently and alternately.

This third embodiment corresponds to a method in which film formation is performed without supplying DCS gas, which is a silane-based gas, in the first embodiment shown in FIG. No Si (silane) is added. Therefore, when the third embodiment is performed, the silane gas supply means 30 is not necessary in the film forming apparatus shown in FIG. The process conditions of the third embodiment are the same as those of the first embodiment except for the conditions relating to the silane-based gas.
In the case of the third embodiment, the boron nitride film is formed using boron having chemical properties similar to silicon, and the boron nitride film contains a carbon component. As in the case of the example, even though the film was formed at a temperature lower than the conventional film forming temperature, for example, about 760 ° C., for example, 550 ° C., dilute hydrofluoric acid used during the surface cleaning process or the etching process As a result, the thin film can be prevented from being excessively scraped off during the cleaning process, and the controllability of the film thickness can be improved. Also, it can sufficiently function as an etching stopper film and an interlayer insulating film.

<Fourth Example of Film Formation Method>
Next, a fourth embodiment of the film forming method of the present invention will be described.
FIG. 6 is a timing chart showing various gas supply timings and RF (radio frequency) application timings in the fourth embodiment of the film forming method of the present invention, and FIG. 7 shows a laminated structure of thin films formed in the fourth embodiment. It is sectional drawing which shows an example.
In the fourth embodiment, a silane-based gas (DCS), a nitriding gas (NH ₃ ), a boron-containing gas (BCl ₃ ), and a hydrocarbon gas (C ₂ H ₄ ) are used on a semiconductor wafer as shown in FIG. A repeated stacked structure of the SiBN thin film 92 and the SiCN thin film 94 is formed. Note that at least one of the SiBN thin film 92 and the SiCN thin film 94 may be formed. That is, in the fourth embodiment, the first step of simultaneously supplying two types of gas, the silane-based gas and the boron-containing gas, for a short time, and the first step of forming the SiBN thin film by supplying the nitriding gas for a short time. Two steps, a third step of simultaneously supplying the two types of gas, the silane-based gas and the hydrocarbon gas, for a short time, and a fourth step of forming the SiCN thin film by supplying the nitriding gas for a short time. Repeat one or more times according to the above order.

In the fourth embodiment, one cycle of the film forming method in which the C ₂ H ₄ gas as the hydrocarbon gas is not supplied at all in the first embodiment shown in FIG. 3 and the second embodiment shown in FIG. This is a method in which film formation is performed by connecting (continuing) one cycle of the film formation method to a new cycle, and repeating this new cycle once or a plurality of times. FIG. 7 shows a state when three cycles of processing are performed. The process conditions of the fourth embodiment are the same as those of the first embodiment and the second embodiment except for the conditions relating to the hydrocarbon gas.
In the case of the fourth embodiment, as shown in FIG. 7, since the SiBN thin film 92 and the SiCN thin film 94 are alternately laminated once or a plurality of layers are laminated, the SiBCN is viewed from the whole laminated structure. It will show similar characteristics to the thin film.

  Also in the case of the fourth embodiment, since a carbon component and a boron component are contained in the silicon nitride film, similarly to the case of the first embodiment, the conventional film formation temperature, for example, about 760 ° C. Although the film is formed at a low temperature, for example, 550 ° C., the etching rate for dilute hydrofluoric acid used during the surface cleaning process or the etching process can be reduced. As a result, the thin film is excessively scraped off during the cleaning process. It is possible to improve the controllability of the film thickness. Also, it can sufficiently function as an etching stopper film and an interlayer insulating film. Moreover, since boron element is contained, the etching resistance can be further improved.

<Evaluation of each example>
Next, since each thin film was formed and evaluated using the first to third embodiments, the evaluation result will be described.
FIG. 8 is a graph showing the evaluation results of the etching rate of each thin film formed by the first to third examples. Here, the etching rates of the SiBCN thin film, the SiCN thin film, and the BCN thin film are shown as the thin films formed using the first to third embodiments, respectively, and the etching rates of the respective thin films not containing the carbon (C) component are also shown. Are also listed as standards. The film forming temperature for this evaluation was 550 ° C., and 1% diluted hydrogen fluoride water was used as the etching solution.

  As is clear from FIG. 8, in the case of a film type in which a carbon component is included in each film, the etching rate can be lowered as compared with a film type in which no carbon component is included, and the film quality can be improved. It could be confirmed. For example, SiBCN thin film can improve 13.8% over SiBN thin film, SiCN thin film can improve 6.8% over SiN thin film, and BCN thin film can improve 48% over BN thin film. As a result, the usefulness of containing carbon could be confirmed.

In each of the first to fourth embodiments described above, the NH ₃ gas is activated by plasma to promote the reaction. However, the NH ₃ gas may not be activated. In this case, the film forming process is performed by slightly raising the process temperature in order to compensate for a decrease in energy caused by not using plasma.
In each of the above embodiments, ethylene gas is used as the hydrocarbon gas. However, the present invention is not limited to this, and one or more gases selected from the group consisting of acetylene, ethylene, methane, ethane, propane, and butane are used. Can be used.

In each of the above embodiments, DCS gas is used as the silane-based gas. However, the present invention is not limited to this, and dichlorosilane (DCS), hexachlorodisilane (HCD), monosilane [SiH ₄ ], disilane [Si ₂ H ₆ ], One or more gases selected from the group consisting of hexamethyldisilazane (HMDS), tetrachlorosilane (TCS), disilylamine (DSA), trisilylamine (TSA), and binary butylaminosilane (BTBAS) can be used.

In each of the above embodiments, NH ₃ gas is used as the nitriding gas. However, the present invention is not limited to this. Ammonia [NH ₃ ], nitrogen [N ₂ ], dinitrogen monoxide [N ₂ O], and nitric oxide One or more gases selected from the group consisting of [NO] can be used.
In each of the above embodiments, BCl ₃ gas is used as the boron-containing gas. However, the gas is not limited to this, and is selected from the group consisting of BCl ₃ , B ₂ H ₆ , BF ₃ , and B (CH ₃ ) _3. One or more gases can be used.
The object to be processed is not limited to a semiconductor wafer, and the present invention can be applied to a glass substrate, an LCD substrate, and the like.

It is a longitudinal cross-sectional block diagram which shows an example of the film-forming apparatus which concerns on this invention. It is a cross-sectional block diagram which shows the film-forming apparatus. It is a timing chart which shows the supply timing of various gases in the 1st Example of the film-forming method of this invention, and the application timing of RF (high frequency). It is a timing chart which shows the supply timing of various gases in the 2nd Example of the film-forming method of this invention, and the application timing of RF (high frequency). It is a timing chart which shows the supply timing of various gas in the 3rd Example of the film-forming method of this invention, and the application timing of RF (high frequency). It is a timing chart which shows the supply timing of various gases in the 4th Example of the film-forming method of this invention, and the application timing of RF (high frequency). It is sectional drawing which shows an example of the laminated structure of the thin film formed in 4th Example. It is a graph which shows the evaluation result of the etching rate of each thin film formed by the 1st thru | or 3rd Example.

Explanation of symbols

2 Film deposition apparatus 4 Processing container 12 Wafer boat (holding means)
28 Nitriding gas supply means 30 Silane-based gas supply means 32 Boron-containing gas supply means 34 Hydrocarbon gas supply means 38, 40, 42, 44 Gas dispersion nozzle 60 Control means 62 Storage medium 66 Activation means 74 Plasma electrode 76 High frequency power supply 86 Heating means W Semiconductor wafer (object to be processed)

Claims (18)

Forming a SiCN thin film on the surface of the target object by supplying a silane-based gas, a nitriding gas, and a hydrocarbon gas into a processing container in which a plurality of target objects are accommodated and evacuated. In the method
The simultaneous supply of the two types of silane-based gas and hydrocarbon gas and the supply of the nitriding gas are performed intermittently and alternately, and the thin film is formed without using plasma. Film forming method. Forming a BCN thin film on the surface of the target object by supplying a nitriding gas, a boron-containing gas, and a hydrocarbon gas into a processing container in which a plurality of target objects are accommodated and evacuated. In the method
A film forming method, wherein the simultaneous supply of the two types of gases, the boron-containing gas and the hydrocarbon gas, and the supply of the nitriding gas are performed intermittently and alternately.   During the intermittent period between the supply of the hydrocarbon gas and the supply of the nitriding gas, the inside of the processing vessel is purged with an inert gas and / or the supply of all the gas is stopped and evacuated. The film forming method according to claim 1, wherein: A thin film is formed on the surface of the object by supplying a silane-based gas, a nitriding gas, a boron-containing gas, and a hydrocarbon gas into a processing container in which a plurality of objects to be processed are accommodated and evacuated. In the film forming method to
A first step of simultaneously supplying two types of gas, the silane-based gas and the boron-containing gas, for a short time;
A second step of forming the SiBN thin film by supplying the nitriding gas only for a short time;
A third step of simultaneously supplying the two types of gas, the silane-based gas and the hydrocarbon gas, for a short time;
A fourth step of forming the SiCN thin film by supplying the nitriding gas only for a short time;
A film forming method, wherein the first step, the second step, the third step, and the fourth step are repeated once or a plurality of times according to the order of the steps .   During an intermittent period between the supply of the silane-based gas and the supply of the nitriding gas, the inside of the processing vessel is purged with an inert gas and / or the supply of all the gases is stopped and evacuated. The film forming method according to claim 4, wherein: Temperature during the deposition of the thin film forming method according to any one of claims 1 to 5, characterized in that in the range of 300 ° C. to 700 ° C.. The pressure during the deposition of the thin film, 13Pa (0.1Torr) ~13300Pa film forming method according to any one of claims 1乃optimum 6, characterized in that in the range of (100 Torr). The silane-based gas is dichlorosilane (DCS), hexachlorodisilane (HCD), monosilane [SiH ₄ ], disilane [Si ₂ H ₆ ], hexamethyldisilazane (HMDS), tetrachlorosilane (TCS), disilylamine (DSA). the film forming method according to any one of claims 1乃optimum 7, characterized in that trisilylamine (TSA), is one or more gases selected from the group consisting of Bicester-tert-butyl amino silane (BTBAS) . The nitriding gas is one or more gases selected from the group consisting of ammonia [NH ₃ ], nitrogen [N ₂ ], dinitrogen monoxide [N ₂ O], and nitric oxide [NO]. the film deposition method according to any one of claims 1乃optimum 8. The boron-containing gas is one or more gases selected from the group consisting of BCl ₃ , B ₂ H ₆ , BF ₃ , and B (CH ₃ ) _3. The film forming method according to claim 1. The hydrocarbon gas is acetylene, ethylene, methane, ethane, propane, formed according to any one of claims 1乃optimum 10, characterized in that the one or more gases selected from the group consisting of butane Membrane method. In a film forming apparatus for forming a predetermined thin film on an object to be processed,
A vertical cylindrical processing container made evacuated,
Holding means for holding the object to be processed in a plurality of stages and being inserted into and removed from the processing container;
Heating means provided on the outer periphery of the processing container;
A silane-based gas supply means for supplying a silane-based gas into the processing vessel;
Nitriding gas supply means for supplying a nitriding gas into the processing vessel;
Hydrocarbon gas supply means for supplying hydrocarbon gas into the processing vessel ;
Controlled so as to form the thin film without using a plasma as well as to perform the supply of two gas co-feed and the nitriding gas of the silane-based gas and a hydrocarbon gas to intermittently and alternately Control means;
A film forming apparatus comprising: In a film forming apparatus for forming a predetermined thin film on an object to be processed,
A vertical cylindrical processing container made evacuated,
Holding means for holding the object to be processed in a plurality of stages and being inserted into and removed from the processing container;
Heating means provided on the outer periphery of the processing container;
Nitriding gas supply means for supplying a nitriding gas into the processing vessel;
Boron-containing gas supply means for supplying boron-containing gas into the processing vessel;
Hydrocarbon gas supply means for supplying hydrocarbon gas into the processing vessel ;
And control means for controlling so as to perform the intermittent and alternating supply of the two gas co-feed and the nitriding gas of the volume Ron-containing gas and a hydrocarbon gas,
A film forming apparatus comprising: In a film forming apparatus for forming a predetermined thin film on an object to be processed,
A vertical cylindrical processing container made evacuated,
Holding means for holding the object to be processed in a plurality of stages and being inserted into and removed from the processing container;
Heating means provided on the outer periphery of the processing container;
A silane-based gas supply means for supplying a silane-based gas into the processing vessel;
Nitriding gas supply means for supplying a nitriding gas into the processing vessel;
Boron-containing gas supply means for supplying boron-containing gas into the processing vessel;
Hydrocarbon gas supply means for supplying hydrocarbon gas into the processing vessel ;
Two first step short time simultaneously supplying a gas of the Sila emissions-based gas and a boron-containing gas carbonization, the second step of forming a SiBN thin film by supplying a short time the nitriding gas, and said silane gas The first step, the second step, and the second step include a third step of simultaneously supplying two kinds of hydrogen gas for a short time and a fourth step of supplying the nitriding gas for a short time to form a SiCN thin film . Control means for controlling to be repeated once or a plurality of times according to the order of three steps and the fourth step ;
A film forming apparatus comprising: The film forming apparatus according to claim 12 , wherein the activating unit is integrally incorporated in the processing container. A SiCN thin film is supplied to the surface of the object without supplying plasma while supplying a silane-based gas, a nitriding gas, and a hydrocarbon gas into a processing container in which a plurality of objects to be processed are accommodated and evacuated. When forming a thin film using a film forming apparatus configured to form
A memory for storing a program for controlling the film forming apparatus so as to intermittently and alternately supply the two types of gases of the silane-based gas and the hydrocarbon gas and the supply of the nitriding gas alternately. Medium. A nitriding gas, a boron-containing gas, and a hydrocarbon gas are supplied into a processing container in which a plurality of objects to be processed are accommodated and evacuated to form a BCN thin film on the surface of the object to be processed. When forming a thin film using the film forming apparatus,
A memory for storing a program for controlling the film forming apparatus so as to intermittently and alternately supply the two types of gases of boron-containing gas and hydrocarbon gas and the supply of the nitriding gas intermittently. Medium. A thin film is formed on the surface of the object by supplying a silane-based gas, a nitriding gas, a boron-containing gas, and a hydrocarbon gas into a processing container in which a plurality of objects to be processed are accommodated and evacuated. When forming a thin film using a film forming apparatus designed to
A first step of simultaneously supplying two types of gas, the silane-based gas and the boron-containing gas, for a short time;
A second step of forming the SiBN thin film by supplying the nitriding gas only for a short time;
A third step of simultaneously supplying the two types of gas, the silane-based gas and the hydrocarbon gas, for a short time;
A fourth step of forming the SiCN thin film by supplying the nitriding gas only for a short time;
A storage medium storing a program for controlling the film forming apparatus to be repeated once or a plurality of times according to the order of the first step, the second step, the third step, and the fourth step. .

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