JP4868737B2 - ヒータプレート及びヒータプレートの製造方法 - Google Patents

ヒータプレート及びヒータプレートの製造方法 Download PDF

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Publication number
JP4868737B2
JP4868737B2 JP2004365669A JP2004365669A JP4868737B2 JP 4868737 B2 JP4868737 B2 JP 4868737B2 JP 2004365669 A JP2004365669 A JP 2004365669A JP 2004365669 A JP2004365669 A JP 2004365669A JP 4868737 B2 JP4868737 B2 JP 4868737B2
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JP
Japan
Prior art keywords
heater plate
aluminum
heater
fitting
fitting portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2004365669A
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English (en)
Japanese (ja)
Other versions
JP2006172970A (ja
Inventor
克己 渡邊
昭 福地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Sky Aluminum Corp
Original Assignee
Furukawa Sky Aluminum Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Sky Aluminum Corp filed Critical Furukawa Sky Aluminum Corp
Priority to JP2004365669A priority Critical patent/JP4868737B2/ja
Priority to KR1020050009522A priority patent/KR101164182B1/ko
Priority to CNA2005100545771A priority patent/CN1791286A/zh
Priority to TW094108636A priority patent/TW200621396A/zh
Publication of JP2006172970A publication Critical patent/JP2006172970A/ja
Application granted granted Critical
Publication of JP4868737B2 publication Critical patent/JP4868737B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Resistance Heating (AREA)
  • Surface Heating Bodies (AREA)
JP2004365669A 2004-12-17 2004-12-17 ヒータプレート及びヒータプレートの製造方法 Active JP4868737B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004365669A JP4868737B2 (ja) 2004-12-17 2004-12-17 ヒータプレート及びヒータプレートの製造方法
KR1020050009522A KR101164182B1 (ko) 2004-12-17 2005-02-02 히터 플레이트 및 히터 플레이트 제조방법
CNA2005100545771A CN1791286A (zh) 2004-12-17 2005-03-11 加热板及加热板的制造方法
TW094108636A TW200621396A (en) 2004-12-17 2005-03-21 Heater plate and manufacturing method of heater plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004365669A JP4868737B2 (ja) 2004-12-17 2004-12-17 ヒータプレート及びヒータプレートの製造方法

Publications (2)

Publication Number Publication Date
JP2006172970A JP2006172970A (ja) 2006-06-29
JP4868737B2 true JP4868737B2 (ja) 2012-02-01

Family

ID=36673480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004365669A Active JP4868737B2 (ja) 2004-12-17 2004-12-17 ヒータプレート及びヒータプレートの製造方法

Country Status (4)

Country Link
JP (1) JP4868737B2 (ko)
KR (1) KR101164182B1 (ko)
CN (1) CN1791286A (ko)
TW (1) TW200621396A (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8263908B2 (en) 2004-10-08 2012-09-11 Furukawa-Sky Aluminum Corp. Heater plate and a method for manufacturing the heater plate
DE102010037005B3 (de) * 2010-08-16 2011-11-03 Alinox Ag Metallplatte mit eingebettetem Heizelement und Verfahren zu ihrer Herstellung
CN102158994B (zh) * 2011-04-06 2015-04-22 张晓骏 铝合金制加热膜的制造方法
CN102123528B (zh) * 2011-04-17 2012-12-26 李昆生 铝型材制造的电热板
CN102768971A (zh) * 2012-07-04 2012-11-07 上海华力微电子有限公司 一种消除晶体状凝结缺陷的刻蚀机台
JP5857081B2 (ja) * 2014-02-17 2016-02-10 助川電気工業株式会社 基板加熱プレートヒータの製造方法
CN104084512B (zh) * 2014-06-26 2018-07-10 北京通蓝海科技发展有限公司 一种生产热定型加热板的方法
JP6948832B2 (ja) 2017-05-22 2021-10-13 株式会社Ｕａｃｊ鋳鍛 真空装置用伝熱板及びその製造方法
CN110479915B (zh) * 2019-09-02 2020-07-24 绍兴永昊精密电热器件有限公司 一种用于加热板自动埋丝的自动化生产设备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000243542A (ja) * 1999-02-24 2000-09-08 Nhk Spring Co Ltd ヒータユニット及びその製造方法
JP3895498B2 (ja) * 1999-04-28 2007-03-22 古河スカイ株式会社 金属部材を接合したヒートプレート及びその製造方法

Also Published As

Publication number Publication date
CN1791286A (zh) 2006-06-21
TW200621396A (en) 2006-07-01
TWI317662B (ko) 2009-12-01
KR20060069210A (ko) 2006-06-21
KR101164182B1 (ko) 2012-07-10
JP2006172970A (ja) 2006-06-29

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