JP4867576B2 - Discharge plasma generation auxiliary device, light emitting device, and lighting apparatus - Google Patents

Description

  The present invention relates to a discharge plasma generation auxiliary device, a light emitting device, and a lighting fixture.

  Conventionally, as shown in FIG. 16, an airtight container 101 made of a light-transmitting material and filled with a discharge gas (not shown), and disposed inside the airtight container 101 to discharge the discharge gas to discharge the discharge gas inside the airtight container 101. Discharge plasma generation used in a light-emitting device 100 including a pair of discharge electrodes 102 and 102 for applying an electric field to a discharge gas as energy supply means for supplying energy for generating discharge plasma in the discharge plasma generation space S An auxiliary device has been proposed that includes a field emission type electron source 103 capable of supplying electrons into a discharge gas by applying an electric field (see, for example, Patent Document 1).

  In this type of discharge plasma generation assisting device, electrons are supplied from the electron source 103 into the discharge gas while applying a voltage between the discharge electrodes 102, 102, thereby reducing the discharge start voltage and maintaining the discharge plasma. It is known that effects such as reduction of discharge and stabilization of discharge plasma can be obtained.

The above-mentioned Patent Document 1 includes the above-described discharge plasma generation assisting device, and at least a part of the hermetic container is formed of a light-transmitting material, and the inner surface of the hermetic container is made of ultraviolet rays or the like generated by the discharge plasma. As a light emitting device in which a phosphor layer that emits light when excited is formed, a plasma display panel (PDP), a fluorescent lamp for lighting equipment, and the like are exemplified.
JP 2002-150944 A

  By the way, in Patent Document 1, a field emission type electron source (cold cathode type electron source) is used as an electron source. As an electron source, a hot cathode type electron such as a filament is used in addition to a field emission type electron source. Sources are also used.

  In order to improve the effect of improving the excitation efficiency of the discharge gas and the effect of reducing the starting voltage and sustaining voltage of the discharge plasma using such a field emission type electron source or a hot cathode type electron source, In order to do so, the drive voltage is increased in the case of a field emission type electron source, a large current is passed in the case of a hot cathode type electron source, or the drive period is lengthened. It is necessary to drive the electron source under severe conditions such as, and the demerit that the lifetime of the electron source is shortened occurs.

  In view of the above-described problems, the present inventors focused on a photoelectric conversion material that emits electrons by absorbing light without applying a voltage or passing a current, and from such a photoelectric conversion material. The inventors have come up with a discharge plasma generation auxiliary device using the photoelectric conversion film as an electron source.

  However, when an electron source using a photoelectric conversion film absorbs light, electrons are emitted not in a uniform direction but in various directions. Here, among the electrons emitted from the electron source, the electrons that have not reached the discharge plasma generation space are effective for improving the excitation efficiency of the discharge gas, reducing the discharge start voltage of the discharge plasma, and reducing the sustain voltage. It will be wasted without contributing.

  Therefore, when an electron source using a photoelectric conversion film is employed, the life can be extended, but the effect of improving the excitation efficiency of the discharge gas, the effect of reducing the starting voltage of the discharge plasma, and the effect of reducing the sustaining voltage of the discharge plasma May not be obtained.

  The present invention has been made in view of the above points, and its purpose is to extend the life and stabilize the effect of improving the excitation efficiency of the discharge gas, and the effect of reducing the starting voltage and sustaining voltage of the discharge plasma. It is an object to provide a discharge plasma generation auxiliary device, a light emitting device, and a lighting fixture that can be obtained.

  In order to solve the above-mentioned problems, in the invention of the discharge plasma generation auxiliary device according to claim 1, an airtight container in which a light-transmitting portion is provided at least partially and sealed with a discharge gas, an inside and an outside of the airtight container, A discharge plasma generation auxiliary device used in a light-emitting device, which is disposed in at least one of the above, and includes an energy supply means for generating discharge plasma by supplying energy to a discharge gas and discharging the discharge gas. An electron source configured using a photoelectric conversion film that emits electrons by absorbing light incident from the outside through the light-transmitting portion of the inside of the hermetic container and the electron source And an anode electrode to which a potential is applied so as to be higher than the electron source.

  According to the discharge plasma generation auxiliary device of the first aspect, the electron source is composed of a photoelectric conversion film that emits electrons by absorbing light without applying a voltage or flowing a current. Therefore, the anode electrode has an effect that the life can be extended as compared with a field emission type electron source (cold cathode type electron source) or a hot cathode type electron source, and the anode electrode has a higher potential than the electron source. Electrons emitted from the electron source can be accelerated toward the anode electrode side by the electric field generated between the electron source and the electron source, so that the amount of electrons supplied to the discharge plasma generation space can be increased. Thus, the effect of improving the excitation efficiency of the discharge gas and the effect of reducing the starting voltage and sustaining voltage of the discharge plasma can be obtained stably.

  According to a second aspect of the present invention, the electron source includes a plate-like support member, and the support member has a plurality of openings that penetrate in the thickness direction of the support member. The photoelectric conversion film is provided on the inner surface of the opening of the support member.

  According to the discharge plasma generation auxiliary device of the second aspect, the plate-like support member is provided with a plurality of openings penetrating in the thickness direction of the support member, and the photoelectric conversion film is provided on the inner surface of the opening. Compared to the case where a photoelectric conversion film is provided on the inner wall surface of the hermetic container, and the photoelectric conversion film is less exposed to the discharge plasma, the photoelectric conversion film is damaged by the discharge plasma. Can be suppressed, and there is an effect that the life can be extended.

  According to a third aspect of the present invention, there is provided a discharge plasma generation auxiliary device according to the second aspect, wherein the opening of the support member is formed in an inversely tapered shape in which the opening area decreases as the discharge plasma generation space is approached. And

  According to the discharge plasma generation auxiliary device of the third aspect, the opening area of the support member is formed in a reverse taper shape in which the opening area decreases as it approaches the discharge plasma generation space in the airtight container. Compared to a uniform case, the photoelectric conversion film can be made difficult to be exposed to the discharge plasma, and it can be further prevented from being damaged by the discharge plasma, and the life can be extended. It is possible to easily irradiate the photoelectric conversion film with light outside the container, and it is possible to increase the efficiency of electron emission from the electron source.

  According to a fourth aspect of the present invention, there is provided a discharge plasma generation auxiliary device according to the second or third aspect of the invention, wherein the surface of the support member facing the discharge plasma generation space is a photoelectric that emits electrons by absorbing light inside the hermetic vessel. A conversion unit is provided.

  According to the discharge plasma generation auxiliary device of the fourth aspect of the present invention, since the photoelectric conversion part that emits electrons by absorbing the light inside the hermetic container is provided on the surface facing the discharge plasma generation space in the support member, Electrons can be emitted not only by the light outside the container but also by the light inside the hermetic container, so that the sustaining voltage of the discharge plasma can be further reduced and the power consumption can be further reduced.

  In the invention of the discharge plasma generation auxiliary device of claim 5, in the invention of any one of claims 1 to 4, a light source for irradiating light to the electron source from the outside of the hermetic container through the translucent portion is provided. It is characterized by.

  According to the discharge plasma generation auxiliary device of the fifth aspect of the invention, since the light source for irradiating the electron source from the outside of the airtight container through the translucent part is provided, the light source is stable from the electron source regardless of the ambient brightness. As a result, electrons can be emitted, and the degree of freedom of installation location is increased.

  According to a sixth aspect of the present invention, there is provided a discharge plasma generation assisting device according to the fifth aspect of the present invention, further comprising control means for controlling the operation of the light source, wherein the control means is synchronized with the timing at which energy is supplied to the discharge gas by the energy supply means. And the light source is operated.

  According to the discharge plasma generation auxiliary device of the sixth aspect of the invention, since the light source is operated to synchronize with the timing when the energy is supplied to the discharge gas by the energy supply means, the time for operating the light source is provided. The power required for the operation of the light source can be suppressed and the power consumption can be reduced.

  According to a seventh aspect of the present invention, there is provided a discharge plasma generation assisting device according to the first to sixth aspects, wherein the discharge plasma generation auxiliary device is disposed between the discharge plasma generation space and the electron source and has a hole for passing electrons and has a lower potential than the anode electrode An extraction electrode to which a potential is applied so as to be higher than the electron source is provided.

  According to the discharge plasma generation auxiliary device of the seventh aspect, the electrons emitted from the electron source can be extracted toward the discharge plasma generation space by the electric field between the extraction electrode and the electron source. The number of electrons supplied to the discharge plasma generation space can be increased, and the effect of improving the excitation efficiency of the discharge gas and the effect of reducing the start voltage and sustain voltage of the discharge plasma can be obtained more stably. There is an effect.

  According to the invention of the discharge plasma generation auxiliary device of claim 8, in the invention of any one of claims 1 to 7, a hot cathode type electron source or a cold cathode type which is arranged in an airtight container and supplies electrons into the discharge gas. An auxiliary electron source comprising an electron source is provided.

  According to the discharge plasma generation auxiliary device of the eighth aspect, since electrons can be supplied from the auxiliary electron source to the discharge plasma generation space in the hermetic vessel, the effect of improving the excitation efficiency of the discharge gas and the discharge plasma can be improved. There is an effect that the effect of reducing the start voltage and the sustain voltage can be obtained more stably.

  According to the invention of the discharge plasma generation auxiliary device of claim 9, in the invention of claim 8, the auxiliary electron source is interposed between the lower electrode, the surface electrode opposed to the lower electrode, the lower electrode and the surface electrode, and nanometer Ballistic electron surface emission type comprising a large number of semiconductor microcrystals on the order and a strong electric field drift layer having a large number of insulating films formed on the surface of each semiconductor microcrystal and having a thickness smaller than the crystal grain size of the semiconductor microcrystal It is a cold cathode type electron source comprising an electron source.

  According to the discharge plasma generation auxiliary device of the ninth aspect of the present invention, compared with a case where a hot cathode type electron source such as a filament or a Spindt type electron source which is a kind of cold cathode type electron source is employed as the auxiliary electron source. As a result, the initial energy of electrons emitted from the auxiliary electron source is increased, so that the effect of improving the excitation efficiency of the discharge gas, the effect of reducing the starting voltage of the discharge plasma, and the effect of reducing the sustaining voltage of the discharge plasma can be obtained more reliably. There is an effect that can be.

  According to a tenth aspect of the present invention, there is provided the discharge plasma generation auxiliary device according to any one of the first to ninth aspects.

  According to the invention of the light emitting device of claim 10, it is possible to extend the lifetime, and to stably obtain the effect of improving the excitation efficiency of the discharge gas and the effect of reducing the starting voltage and sustaining voltage of the discharge plasma. Play. In addition, since the starting voltage and sustaining voltage of the discharge plasma can be reduced, there is an effect that power consumption can be reduced. In addition, there is an effect that the luminous efficiency can be improved.

  The invention of claim 11 is characterized by comprising the light emitting device according to claim 10.

  According to the invention of the illuminating device of claim 11, it is possible to extend the life, and to stably obtain the effect of improving the excitation efficiency of the discharge gas and the effect of reducing the starting voltage and sustaining voltage of the discharge plasma. Play. In addition, since the starting voltage and sustaining voltage of the discharge plasma can be reduced, there is an effect that power consumption can be reduced. In addition, there is an effect that the luminous efficiency can be improved.

  In the present invention, since the electron source is composed of a photoelectric conversion film that emits electrons by absorbing light without applying a voltage or passing a current, a field emission type electron source (cold cathode) Type electron source) and an electric field generated between the anode electrode and the electron source so that the life of the anode electrode is higher than that of the electron source. Because the electrons emitted from the electron source can be accelerated toward the anode electrode side, the amount of electrons supplied into the discharge plasma generation space can be increased, and the effect of improving the excitation efficiency of the discharge gas, In addition, it is possible to stably obtain the effect of reducing the starting voltage and sustaining voltage of the discharge plasma.

(Embodiment 1)
For example, as shown in FIG. 1, the discharge plasma generation auxiliary device of the present embodiment generates discharge plasma in an airtight container 2 in which a discharge gas (not shown) is sealed, and a discharge plasma generation space S in the airtight container 2. The light emitting device 1 includes a pair of electrodes 3 and 3 for applying an electric field to a discharge gas for generation, and is installed on the inner wall surface of the hermetic container 2 (through the airtight container 2). ) An electron source 4 configured using a photoelectric conversion film 41 that emits electrons by absorbing light incident on the hermetic container 2 from the outside, and the inside of the hermetic container 2 so as to face the electron source 4 An anode electrode 5 installed on the wall surface and provided with a potential higher than that of the electron source 4; a light source 6 for irradiating the electron source 4 with light from the outside of the hermetic container 2; and a control means for controlling the operation of the light source 6. And a control unit 7.

  Here, the airtight container 2 is formed in a long cylindrical shape whose both ends are closed using a light-transmitting material (for example, a glass material such as quartz glass, a light-transmitting ceramic, or the like). The airtight container 2 is not limited to a cylindrical shape, and may be a spherical shape such as a light bulb, a rectangular parallelepiped shape or a cubic shape, or a pair of flat plates and both flat plates. It may be a planar airtight container composed of a frame interposed therebetween.

The airtight container 2 is filled with xenon (Xe) gas that emits ultraviolet rays when excited as a discharge gas. The discharge gas includes argon (Ar), neon (Ne), helium (He), krypton (Kr), xenon (Xe) and other rare gases, nitrogen (N ₂ ), carbon monoxide (CO), and mercury. It is possible to use a mixed gas whose main component is either steam or a combination thereof. Further, the discharge gas is not limited to the above example, and may be any gas that can cause discharge.

  The pair of electrodes 3, 3 are disposed inside the hermetic vessel 2 and are used as energy supply means for supplying discharge energy to generate discharge plasma in the discharge plasma generation space S in the hermetic vessel 2 by discharging the discharge gas. The airtight container 2 is provided at both ends of the airtight container 2 so as to face each other in the axial direction (longitudinal direction, left-right direction in FIG. 1). Of course, the pair of electrodes 3 and 3 are provided in the hermetic container 2 so as to maintain the hermeticity of the hermetic container 2. In the present embodiment, the space between the pair of electrodes 3 and 3 in the hermetic container 2 becomes the discharge plasma generation space S. Therefore, the discharge plasma generation space S can be set to a desired position depending on the shape and arrangement position of the electrodes 3 and 3.

  The electron source 4 is configured by using a photoelectric conversion film 41 made of a substance having a property of absorbing light (photons) and emitting electrons, and as shown in FIG. Laminated on the inner wall. Here, suitable examples of the material of the photoelectric conversion film 41 constituting the electron source 4 include sodium (Na), potassium (K), antimony (Sb), antimony alloys such as antimony silver and cesium antimony, cesium iodide, Examples thereof include potassium sodium, cesium compound, cesium silver oxide compound and the like.

  The electron source 4 is connected with a wiring 4 a for applying a potential to the photoelectric conversion film 41. The wiring 4a is drawn out from the hermetic container 2 so as to maintain the hermeticity of the hermetic container 2, and is connected to an output terminal (not shown) on the low potential side of the power source (hereinafter referred to as “second power source”) V2. )). The second power source V2 is for applying a predetermined DC voltage between the electron source 4 and the anode electrode 5, and is controlled to be turned on / off by the control unit 7.

  The anode electrode 5 is formed in a rectangular plate shape using, for example, a light-transmitting conductive material such as ITO, and the inside of the hermetic container 2 is opposed to the electron source 4 as shown in FIG. It is arrange | positioned on the wall surface (that is, it arrange | positions in the airtight container 2 so that the discharge plasma production space S may be located between the electron sources 4). Here, the outer size of the anode electrode 5 is equal to or larger than the outer size of the electron source 4. In addition, as a material used for the anode electrode 5, you may use a metal material, conductive metal oxides, such as ITO, a conductive polymer, etc., for example.

  In addition, a wiring 5 a for applying a potential to the anode electrode 5 is connected to the anode electrode 5. The wiring 5a is pulled out from the hermetic container 2 so as to maintain the hermeticity of the hermetic container 2, and is electrically connected to an output terminal (not shown) on the high potential side of the second power supply V2. .

  That is, the wiring 5a of the anode electrode 5 is connected to the output terminal on the high potential side of the second power supply V2, and the wiring 4a of the electron source 4 is connected to the output terminal on the low potential side of the second power supply V2. As a result, an electric field is applied between the electron source 4 and the anode electrode 5 by the second power source V2 so as to bring the anode electrode 5 to the high potential side.

  The light source 6 is operated (lit) by power supply from a power source (hereinafter referred to as “first power source”) V1, for example, an incandescent lamp, a fluorescent lamp, a mercury lamp, a xenon lamp, A cold cathode lamp, organic EL, inorganic EL, LED, or the like can be used. The light source 6 is not limited to the one that requires power supply, and for example, a phosphorescent material, a phosphorescent material, a chemiluminescent material (for example, luminol solution) or the like may be used. Moreover, as the light source 6, it is preferable to use what can radiate | emit the light of the wavelength range with a high photoelectric conversion rate of the photoelectric converting film 41 which comprises the electron source 4. FIG.

  The control unit 7 constitutes a control unit that controls the operation (lighting operation) of the light source 6 by controlling the operation of the first power supply V1 (that is, controls the operation timing of the light source 6). It is configured using a microcomputer or the like. The control unit 7 is configured to control the application of voltage between the anode electrode 5 and the electron source 4 by controlling the operation of the second power supply V2.

  By the way, effects such as reduction of the discharge plasma start voltage (discharge start voltage), reduction of the discharge plasma sustain voltage (discharge sustain voltage), and stabilization of the discharge plasma apply a voltage between the pair of electrodes 3 and 3. However, since electrons are obtained by supplying electrons from the electron source 4 into the discharge gas, electrons are supplied from the electron source 4 into the discharge gas when no voltage is applied between the pair of electrodes 3 and 3. You don't have to.

  In view of the above points, the control unit 7 of the present embodiment is configured to synchronize with the timing at which energy is supplied to the discharge gas by the energy supply means (that is, the timing at which a voltage is applied between the pair of electrodes 3 and 3). 6 is lit. In addition, the second power source V2 is operated in synchronization with the operation timing of the light source 6, and a voltage for setting the anode electrode 5 to the high potential side is applied between the anode electrode 5 and the electron source 4. Yes.

  For example, when the voltage applied between the pair of electrodes 3 and 3 is a periodic wave voltage that alternately applies a positive rectangular wave voltage and a negative rectangular wave voltage as shown in FIG. As shown in FIGS. 2 (a) and 2 (b), the unit 7 is from the time T1 when the application of the rectangular wave voltage is started between the pair of electrodes 3 and 3 to the time T2 when the application of the rectangular wave voltage is finished. In addition, the light source 6 is lit for a predetermined time (between t1 and t2).

  2A and 2B, each time a positive or negative rectangular wave voltage is applied between the pair of electrodes 3 and 3 (that is, every half cycle of the periodic wave voltage), the light source 6 ( That is, the first power source V1) is controlled, but the light source 6 is controlled every positive rectangular wave voltage or every negative rectangular wave voltage (that is, every period of the periodic wave voltage). Alternatively, the light source 6 may be controlled every two or three rectangular wave voltages regardless of positive or negative. In short, the light source 6 may be operated in synchronization with the timing at which energy is supplied to the discharge gas by the pair of electrodes 3 and 3. In the present embodiment, the timing at which the light source 6 is turned on and the timing at which a voltage is applied between the anode electrode 5 and the electron source 4 from the second power source V2 are set to the same timing. The voltage need only be applied between the second power source V2 and the anode electrode 5 and the electron source 4 at least while the light source 6 is turned on.

  Next, operation | movement of the light-emitting device 1 provided with the discharge plasma production auxiliary | assistance apparatus of this embodiment is demonstrated. First, a periodic wave voltage composed of a rectangular wave voltage as shown in FIG. 2A was applied between the pair of electrodes 3 and 3 using the potential of one electrode 3 (left electrode 3 in FIG. 1) as a reference potential. At that time, the light source 6 is turned on by the controller 7 for a predetermined time (between t1 and t2). Then, electrons are emitted from the electron source 4 that has absorbed the light from the light source 6 into the hermetic container 2. Further, a voltage is applied by the second power source V2 between the electron source 4 and the anode electrode 5 for a predetermined time (between t1 and t2) by the control unit 7.

  Here, the electrons emitted from the electron source 4 are emitted from the electron source 4 in various directions. In the present embodiment, the hermetic container is disposed so as to sandwich the discharge plasma generation space S with the electron source 4. 2, an anode electrode 5 is disposed, and a voltage is applied between the anode electrode 5 and the electron source 4 so that the anode electrode 5 is on the high potential side and the electron source 4 is on the low potential side. The electrons emitted from the electron source 4 are accelerated toward the anode electrode 5 by the electric field between the anode electrode 5 and the electron source 4 and easily reach the discharge plasma generation space S. As a result, the discharge plasma The amount of electrons supplied into the generation space S increases (that is, electrons emitted from the electron source 4 by the anode electrode 5 are drawn out to the discharge plasma generation space S).

  The electrons supplied from the electron source 4 into the discharge plasma generation space S as described above are accelerated by the electric field between the pair of electrodes 3 and 3 and collide with the molecules or atoms of the discharge gas existing in the hermetic vessel 2. To do. At this time, if the energy of the electrons before the collision is greater than the ionization energy of the discharge gas, the discharge gas is excited and ionized. By repeating such a process, the current flowing between the pair of electrodes 3 and 3 rapidly increases, and discharge plasma is generated in the discharge plasma generation space S.

  According to the discharge plasma generation auxiliary device of the present embodiment described above, the electron source 4 is constituted by the photoelectric conversion film 41 that emits electrons by absorbing light without applying a voltage or passing a current. Therefore, it has an effect that the life can be extended as compared with a field emission type electron source (cold cathode type electron source) or a hot cathode type electron source. In addition, the electrons emitted from the electron source 4 are accelerated toward the anode electrode 5 by an electric field generated between the anode electrode 5 and the electron source 4 so that the anode electrode 5 has a higher potential than the electron source 4. Therefore, the amount of electrons supplied into the discharge plasma generation space S can be increased, and the effect of improving the excitation efficiency of the discharge gas and the effect of reducing the starting voltage and sustaining voltage of the discharge plasma can be stabilized. There is an effect that it can be obtained.

  Further, the electron source 4 has a sufficient thickness unlike a field emission type electron source (cold cathode type electron source) such as a ballistic electron surface emission type electron source which requires a surface electrode having a thickness of about 10 nm to 15 nm. Therefore, the effect of damage caused by the discharge plasma is small, and even when the area exposed to the discharge plasma is increased, it is possible to suppress a decrease in lifetime and reliability.

  In addition, since the light source 6 for irradiating the electron source 4 with light from the outside of the hermetic container 2 through the translucent part is provided, electrons can be stably emitted from the electron source 4 regardless of the ambient brightness. It becomes possible, and there is an effect that the degree of freedom of the installation location is increased.

  In addition, the light source 6 is turned on in synchronization with the timing at which energy is supplied to the discharge gas by the energy supply means (that is, the timing at which a voltage is applied between the pair of electrodes 3 and 3). Since the time for operating the light source 6 is shortened compared with the case of emitting electrons, the power required for the operation of the light source 6 can be suppressed and the power consumption can be reduced (that is, the power consumption of the first power supply V1 can be reduced). It can be suppressed). Similarly, by applying a voltage between the electron source 4 and the anode electrode 5 in synchronization with the timing of operating the light source 6 (that is, the timing of positively emitting electrons from the electron source 4), the electrons from the light source 6 are Since the second power source V2 is not operated when the light source 4 is not irradiated with light (that is, when the amount of electrons emitted from the electron source 4 is small), between the electron source 4 and the anode electrode 5 throughout. The time for operating the second power supply V2 is shortened compared to the case where a voltage is applied to the second power supply V2, and the power consumption of the second power supply V2 can be suppressed.

  Therefore, according to the light-emitting device 1 including the above-described discharge plasma generation assisting device, the lifetime can be extended, and the discharge gas excitation efficiency improvement effect and the discharge plasma start voltage and sustain voltage reduction effect can be stabilized. There is an effect that it can be obtained. In addition, since the starting voltage and sustaining voltage of the discharge plasma can be reduced, there is an effect that power consumption can be reduced. In addition, there is an effect that the luminous efficiency can be improved.

  By the way, in the light emitting device 1 having the configuration shown in FIG. 1, the anode electrode 5 of the discharge plasma generation auxiliary device is provided in the hermetic container 2, but the anode electrode 5 is connected to the electron source 4 as shown in FIG. It may be arranged on the outer wall surface of the hermetic vessel 2 so that the discharge plasma generation space S is located between them. In this way, the wiring 5a of the anode electrode 5 does not need to be pulled out from the hermetic container 2 while maintaining the hermeticity of the hermetic container 2, so that the structure and the manufacturing process can be simplified. Thus, the cost of the light emitting device 1 can be reduced.

  In this embodiment, the light source 6 is used to irradiate the electron source 4 with light from the outside of the hermetic container 2. However, instead of the light source 6, discharge plasma generation such as sunlight, moonlight, indoor illumination light, etc. External light independent of the auxiliary device may be used, and in this way, power for turning on the light source 6 is not necessary, so that power consumption can be reduced.

(Embodiment 2)
The discharge plasma generation assisting device of the present embodiment is characterized by the configuration of the electron source 4, and other configurations are the same as those of the first embodiment, and thus illustration and description thereof are omitted.

  The electron source 4 in the present embodiment includes a support member 40 that supports the photoelectric conversion film 41 as shown in FIGS.

  The support member 40 is formed into a plate shape (in this embodiment, a rectangular flat plate shape) using, for example, a glass material, a ceramic material, a metal material, a polymer material, or the like, and the surface (the upper surface in FIG. 4A). ) Is opposed to the discharge plasma generation space S in the hermetic container 2 and the back surface (the lower surface in FIG. 4A) is in contact with the inner wall surface of the hermetic container 2 (see FIG. 1). It is installed on the inner wall surface in the center of the direction.

  Here, considering that an electric field is applied between the anode electrode 5 (see FIG. 1) and the electron source 4, the support member 40 may be made of a conductive material such as a metal material. Preferably, in this case, the wiring 4 a is connected to the support member 40. When an insulating material is used as the support member 40, a cathode electrode (not shown) for the anode electrode 5 is provided on the back surface of the support member 40, and this cathode electrode is connected to the low potential of the second power source V2 by the wiring 4a. What is necessary is just to make it electrically connect to the output terminal of the side.

  The support member 40 is provided with a plurality (30 in the illustrated example) of openings 40a having a uniform opening area penetrating in the thickness direction of the support member 40. The opening 40a has, for example, a circular opening shape. Is formed.

  The photoelectric conversion film 41 is provided on the inner surface of the opening 40 a of the support member 40 so as to cover the entire inner surface.

  According to the discharge plasma generation auxiliary device of the present embodiment described above, the plate-like support member disposed on the inner wall surface of the hermetic vessel 2 in addition to the same effects as the discharge plasma generation auxiliary device of the first embodiment. 40 is provided with a plurality of openings 40 a penetrating in the thickness direction of the support member 40, and the photoelectric conversion film 41 is provided on the inner surface of the opening 40 a, so that the photoelectric conversion film 41 is provided on the inner wall surface of the hermetic container 2. Compared with the case of providing the photoelectric conversion film 41, the photoelectric conversion film 41 is less likely to be exposed to the discharge plasma, which can prevent the photoelectric conversion film 41 from being damaged by the discharge plasma (damage due to ion collision or the like), and has a long lifetime. There is an effect that it can be realized.

  By the way, in this embodiment, although the opening part 40a whose opening shape is circular shape is provided in the supporting member 40 of the electron source 4, the opening shape of the opening part 40a may be a polygonal shape. For example, the opening 40a may have a square shape (square in the illustrated example) as shown in FIG. 5A, or the opening shape may be triangular (see FIG. 5B). In the illustrated example, the opening 40a may be an equilateral triangle), or may be an opening 40a having an octagonal shape (regular octagon in the illustrated example) as shown in FIG. 5C. In short, what is necessary is just to penetrate the support member 40 in the thickness direction of the support member 40 (the discharge plasma generation space S is exposed to the outside of the airtight container 2).

  Further, the size of the opening 40a provided in the support member 40 may be appropriately set in accordance with the application, purpose, specification, etc. For example, as shown in FIG. 5 (d), the opening 40a is supported in comparison with FIG. 5 (a). The surface area of the support member 40 may be reduced by increasing the opening area of each opening 40a without changing the outer size of the member 40, or as shown in FIG. The number of 40a may be increased, and as shown in FIG. 5 (f), openings 40a having different opening shapes (in the illustrated example, the opening shape is a rectangular opening and the opening shape is an octagonal opening). May be provided on the support member 40. These points are the same in the embodiments described later.

(Embodiment 3)
The basic configuration of the discharge plasma generation auxiliary device of the present embodiment is substantially the same as that of the second embodiment, and is characterized by the shape of the opening 40 a of the support member 40 in the electron source 4. In addition, since the other structure is the same as that of the said Embodiment 2, it attaches | subjects the same code | symbol about the same structure, and abbreviate | omits description.

  In this embodiment, as shown in FIGS. 6A and 6B, each opening 40a of the support member 40 generates discharge plasma from the back surface (the lower surface in FIG. 6A) facing the inner wall surface of the hermetic container 2. It is formed in the reverse taper shape which an opening area reduces as it goes to the surface (upper surface in Fig.6 (a)) of the support member 40 which faces the space S (in other words, the opening part 40a approaches the discharge plasma production space S). As the opening area decreases, the taper is formed in a reverse taper shape).

  In the present embodiment, the opening area of the opening 40a on the front surface side of the support member 40 is smaller than that of the second embodiment, and the opening area of the opening 40a on the back surface side of the supporting member 40 is smaller than that of the second embodiment. It is formed to be large.

  According to the discharge plasma generation auxiliary device of the present embodiment described above, the same effect as that of the second embodiment is obtained, and the opening 40a of the support member 40 approaches the discharge plasma generation space S in the hermetic vessel 2. Since the opening area is an inversely tapered shape, the opening area of the opening 40a on the surface side of the support member 40 is larger than when the opening area is uniform as in the opening 40a of the second embodiment. And the opening area of the opening 40a on the back surface side of the support member 40 can be increased. As a result, the photoelectric conversion film 41 is hardly exposed to the discharge plasma on the front surface side of the support member 40, and is damaged by the discharge plasma. It is possible to further suppress receiving the light, and on the back surface side of the support member 40, light outside the airtight container 2 (mainly light from the light source 6) is photoelectrically converted. Easily irradiated to 1, an effect that it is possible to increase the electron emission efficiency of an electron source 4.

(Embodiment 4)
The basic configuration of the discharge plasma generation auxiliary device of the present embodiment is substantially the same as that of the third embodiment, and the configuration of the electron source 4 is characteristic. In addition, since the other structure is the same as that of the said Embodiment 3, the same code | symbol is attached | subjected about the same structure and description is abbreviate | omitted.

  As shown in FIGS. 7A and 7B, the electron source 4 according to the present embodiment has a light beam inside the hermetic container 2 (see FIG. 1) on the surface of the support member 40 (upper surface in FIG. 7A). (In the case of this embodiment, the point which is provided with the photoelectric conversion part 42 which discharge | releases an electron by absorbing the ultraviolet-ray produced by discharge of discharge gas) differs from Embodiment 3. FIG.

  The photoelectric conversion part 42 is a photoelectric conversion film formed by using a substance having the property of absorbing light and emitting electrons in the same manner as the photoelectric conversion film 41, and is shown in FIGS. 7 (a) and 7 (b). As described above, the support member 40 is provided so as to cover the entire surface, which is the surface facing the discharge plasma generation space S.

  A suitable example of the material of the photoelectric conversion unit 42 is the same as the material of the photoelectric conversion film 41 described in the first embodiment. In the present embodiment, the photoelectric conversion film 41 and the photoelectric conversion unit 42 are continuously formed using the same material. However, the photoelectric conversion film 41 and the photoelectric conversion unit 42 may be formed separately instead of being formed continuously. The conversion film 41 and the photoelectric conversion unit 42 may be made of different materials.

  According to the discharge plasma generation auxiliary device of the present embodiment described above, the same effects as those of the third embodiment are obtained, and the light inside the hermetic container 2 (discharge in the case of the present embodiment) is formed on the surface of the support member 40. Since the photoelectric conversion part 42 that emits electrons by absorbing (ultraviolet rays generated by gas discharge) is provided, electrons can be emitted not only by light outside the hermetic container 2 but also by light inside the hermetic container 2. As a result, the sustaining voltage of the discharge plasma can be further reduced, and the power consumption can be further reduced.

  In addition, since the photoelectric conversion part 42 is provided in the surface which is a surface which faces the discharge plasma production space S in the supporting member 40, there is a possibility that the photoelectric conversion part 42 may be damaged by being exposed to the discharge plasma. Unlike a ballistic electron surface emission electron source that requires a surface electrode having a thickness of about ˜15 nm, it can have a sufficient thickness, so that the influence of damage by the discharge plasma is relatively small. Moreover, even if the photoelectric conversion part 42 is damaged, the photoelectric conversion film 41 is not affected at all, so that the effect of the photoelectric conversion film 41 can be obtained without any problem.

(Embodiment 5)
As shown in FIG. 8A, the discharge plasma generation auxiliary device of this embodiment is different from that of Embodiment 1 in that it includes an extraction electrode 8. In addition, since the other structure is the same as that of the said Embodiment 1, the same code | symbol is attached | subjected about the same structure and description is abbreviate | omitted.

  As shown in FIG. 8B, the extraction electrode 8 is a plate (in this embodiment, a rectangular flat plate) formed using, for example, a conductive material (for example, nickel, stainless steel, aluminum, etc.). As shown in FIG. 8A, a plurality of (28 in the present embodiment) electron passing apertures penetrating in the thickness direction of the plate portion 8a are formed in the portion 8a. The discharge plasma generation space S and the electron source 4 are arranged in parallel with the electron source 4. Here, the thickness of the plate portion 8 a is set to a thickness that allows electrons to pass through efficiently, and the outer size is set to the same size as the outer size of the electron source 4. The outer size of the plate portion 8a is preferably larger than the outer size of the electron source 4. Further, the shape of the plate portion 8a may be a circular flat plate shape or the like, and may be a shape that matches the shape of the airtight container 2 or the shape of the electron source 4.

  In addition, a wiring 8 c for applying a potential to the extraction electrode 8 is connected to the extraction electrode 8. The wiring 8c is drawn out from the hermetic container 2 so as to maintain the hermeticity of the hermetic container 2, and is connected to an output terminal (not shown) on the high potential side of a power source (hereinafter referred to as “third power source”) V3. )).

  Here, the third power source V3 is for applying a predetermined DC voltage lower than that of the second power source V2 between the extraction electrode 8 and the electron source 4, and is controlled to be turned on / off by the control unit 7. It has come to be. The wiring 4a of the electron source 4 is electrically connected to an output terminal (not shown) on the low potential side of the third power source V3. The third power source V3 connects the lead electrode 8 and the electron source 4 to each other. In the meantime, a voltage is applied such that the potential of the extraction electrode 8 is lower than that of the anode electrode 5 and higher than that of the electron source 4.

  As described above, in the discharge plasma generation auxiliary device of the present embodiment, the electron source 4 has a hole 8b for passing electrons, which is provided between the discharge plasma generation space S and the electron source 4, and has a lower potential than the anode electrode 5 and the electron source. 4 is provided with an extraction electrode 8 to which a voltage is applied so as to have a higher potential than 4, so that electrons emitted from the electron source 4 are brought to the extraction electrode 8 side by an electric field between the extraction electrode 8 and the electron source 4. Therefore, it is easy to reach the plasma generation space S side through the hole 8b of the extraction electrode 8 (that is, electrons emitted from the electron source 4 are discharged to the discharge plasma generation space S by the extraction electrode 8). Will be pulled in).

  Therefore, according to the discharge plasma generation assisting device of this embodiment, electrons emitted from the electron source 4 by the electric field between the extraction electrode 8 and the electron source 4 are extracted toward the discharge plasma generation space S to generate discharge plasma. Since it is easy to reach the space S, the number of electrons supplied from the electron source 4 to the discharge plasma generation space S can be increased, the effect of improving the excitation efficiency of the discharge gas, and the starting voltage of the discharge plasma. And the effect that the reduction effect of a maintenance voltage can be acquired more stably is produced.

  In addition, since the extraction electrode 8 is disposed between the electron source 4 and the discharge plasma generation space S, the extraction electrode 8 exhibits a function as a cover for protecting the electron source 4 from the discharge plasma. 4 has an effect of extending the service life. In particular, since the extraction electrode 8 having a higher potential than that of the electron source 4 is interposed between the electron source 4 and the discharge plasma generation space S, it is difficult for ions of the discharge plasma to reach the electron source 4 side. As a result, the lifetime of the electron source 4 can be further extended.

  By the way, in the present embodiment, the extraction electrode 8 is formed by forming a hole 8b having a circular opening shape in a rectangular flat plate portion 8a. The opening shape of the hole 8b is, for example, FIG. As shown in a), it may have a quadrangular shape (in the illustrated example, a square), or a triangular shape or a polygonal shape such as an octagonal shape. Moreover, you may make it provide the hole part 8b from which opening shape differs in the board part 8a. In short, it is only necessary to form a hole portion 8b that penetrates in the thickness direction of the plate portion 8a and allows electrons to pass therethrough.

  Further, the size of the hole 8b provided in the plate portion 8a may be appropriately set according to the use, purpose, specification, etc. For example, the opening area of each hole portion 8b can be set without changing the outer size of the plate portion 8a. By increasing the size, the area of the surface of the plate portion 8a may be reduced, and the number of the hole portions 8b may be increased or decreased as appropriate. If the thickness of the extraction electrode 8 is set to a thickness that allows electrons to pass efficiently, the hole 8b is not necessarily provided. On the other hand, the extraction electrode 8 may have a mesh shape as shown in FIG.

  A secondary electrode made of a material (for example, Cs, Ag, BaO, MgO, amorphous carbon, diamond, etc.) that emits secondary electrons into the discharge gas by collision of electrons emitted from the electron source 4 is formed on the extraction electrode 8. An electron emission film (not shown) may be formed, and in this way, secondary electrons emitted from the secondary electron emission film can be used for generation of the discharge plasma. The effect that it becomes easy is acquired.

  In addition, although the discharge plasma production auxiliary | assistance apparatus of this embodiment has shown the example which provided the extraction electrode 8 in the discharge plasma production auxiliary | assistance apparatus of Embodiment 1, of course, the discharge plasma production auxiliary | assistance apparatus of Embodiment 2-4 is shown. An extraction electrode 8 may be provided.

(Embodiment 6)
As shown in FIG. 10, the discharge plasma generation auxiliary device of the present embodiment is different from the first embodiment in that an auxiliary electron source 9 is provided in addition to the electron source 4. In addition, since the other structure is the same as that of the said Embodiment 1, the same code | symbol is attached | subjected about the same structure and description is abbreviate | omitted.

  The auxiliary electron source 9 is a cold cathode type electron source composed of a field emission type electron source called a ballistic electron surface emission type electron source, and has a rectangular plate-like insulating property as shown in FIG. A lower electrode 91 made of a metal film (for example, a tungsten film) is formed on one surface of a substrate (for example, a glass substrate having an insulating property, a ceramic substrate having an insulating property) 90, and a strong electric field is formed on the lower electrode 91. A drift layer 92 is formed, and a surface electrode 93 made of a conductive thin film (for example, a metal film) is formed on the strong electric field drift layer 92. In addition, although it is preferable to set the film thickness of the electroconductive thin film which comprises the surface electrode 93 to about 10-15 nm, the said electroconductive thin film may be not only a single layer film but a multilayer film.

  Such an auxiliary electron source 9 is located in the vicinity of one electrode 3 (left electrode 3 in FIG. 10), with the surface electrode 93 facing the other electrode 3 (right electrode 3 in FIG. 10). It arrange | positions in the airtight container 2. FIG. The auxiliary electron source 9 has a pair of wirings for applying a driving voltage from a power source (hereinafter referred to as “fourth power source”) V 4 between the lower electrode 91 and the surface electrode 93 of the auxiliary electron source 9. 9b, 9b are electrically connected, and one wiring 9b connected to the output terminal (not shown) on the low potential side of the fourth power supply V4 is connected to the lower electrode 91, and the high voltage of the fourth power supply V4 is connected. The other wiring 9b connected to the potential side output terminal (not shown) is electrically connected to the surface electrode 93, respectively. Here, the fourth power source V4 is for supplying a driving voltage to the auxiliary electron source 9, and is configured to be on / off controlled by the control unit 7.

  Hereinafter, the auxiliary electron source 9 will be described in more detail with reference to FIG. In the auxiliary electron source 9 in this embodiment, the lower electrode 91, the strong electric field drift layer 92, and the surface electrode 93 constitute an electron source element 9 a that emits electrons through the surface electrode 93.

  As shown in FIG. 11B, the strong electric field drift layer 92 of the electron source element 9a includes at least columnar polycrystalline silicon grains (semiconductor crystals) 92a arranged on the surface side of the lower electrode 91, and grains. A thin silicon oxide film 92b formed on the surface of 92a, a number of nanometer-order silicon microcrystals (semiconductor microcrystals) 92c interposed between the grains 92a, and the silicon microcrystals formed on the surface of each silicon microcrystal 92c. It is composed of a large number of silicon oxide films 92d which are insulating films having a film thickness smaller than the crystal grain size of 92c. Here, each grain 92a extends in the thickness direction of the lower electrode 91 (that is, extends in the thickness direction of the insulating substrate 90).

In order to emit electrons from the electron source element 9a described above, a driving voltage is applied between the surface electrode 93 and the lower electrode 91 so that the surface electrode 93 is on the high potential side with respect to the lower electrode 91. The electrons injected from the lower electrode 91 into the strong electric field drift layer 92 drift through the strong electric field drift layer 92 and are emitted through the surface electrode 93 (the arrow in FIG. Shows the flow of emitted electrons e ⁻ ).

  In the electron source element 9a in the present embodiment described above, electrons can be emitted even when the driving voltage applied between the surface electrode 93 and the lower electrode 91 is a low voltage of about 10 to 20V. The electron source element 9a of the present embodiment is characterized in that the electron emission characteristic is less dependent on the degree of vacuum, and no popping phenomenon occurs when electrons are emitted, so that electrons can be stably emitted with high electron emission efficiency. is doing. The driving voltage applied to the electron source element 9a may be a constant DC voltage or a pulsed voltage. Here, when the drive voltage is a pulse voltage, a reverse bias voltage may be applied when the drive voltage is not applied.

The basic configuration of the electron source element 9a of this embodiment is well known, and it is considered that electron emission occurs in the following model. That is, when a voltage is applied between the surface electrode 93 and the lower electrode 91 with the surface electrode 93 set to the high potential side, electrons e ⁻ are injected from the lower electrode 91 into the strong electric field drift layer 92. On the other hand, most of the electric field applied to the strong electric field drift layer 92 is applied to the silicon oxide film 92d. Since the silicon oxide film 92d is very thin, the electrons e ⁻ injected into the strong electric field drift layer 92 are easily It tunnels through the silicon oxide film 92d and enters the silicon oxide film 92d of the adjacent silicon microcrystal 92c.

The electron e ⁻ is accelerated every time it passes through the silicon oxide film 92d by the strong electric field applied to the silicon oxide film 92d, and the region between the grains 52a in the strong electric field drift layer 92 is directed toward the surface in FIG. Drifts in the direction of the arrow (upward in FIG. 11B) and reaches the surface electrode 93. The electrons e ⁻ that have reached the surface electrode 93 are repeatedly accelerated by the strong electric field applied to the silicon oxide film 92d and have a kinetic energy considerably higher than that in the thermal equilibrium state, and are thus tunneled through the surface electrode 93 and emitted.

As described above, in the strong electric field drift layer 92, electrons e ⁻ injected from the lower electrode 91 are accelerated by the electric field applied to the silicon oxide film 92d without being scattered by the silicon microcrystal 92c, and drift. 93 (ballistic electron emission phenomenon) and heat generated in the strong electric field drift layer 92 is dissipated through the grains 92a, so that no popping phenomenon occurs during electron emission, and electrons can be stably emitted. .

  In the above-described strong electric field drift layer 92, the silicon oxide film 92d constitutes an insulating film and an oxidation process is employed for forming the insulating film. However, a nitriding process or an oxynitriding process is employed instead of the oxidation process. Alternatively, when the nitriding process is adopted, the silicon oxide films 92b and 92d are both silicon nitride films, and when the oxynitriding process is adopted, the silicon oxide films 92b and 92d are both silicon oxynitride. Become a film.

  In this embodiment, a ballistic electron surface emission electron source, which is a cold cathode electron source, is used as the auxiliary electron source 9, but a hot cathode electron source such as a filament (hot filament) may be used. As the cold cathode electron source, a field emission type electron source such as Spindt type, CNT type, SEC type, MIM type and MIS type can be used in addition to the ballistic electron surface emission type electron source. The emission electron source has the advantage that the energy of the emitted electrons is higher.

  Therefore, if a ballistic electron surface emission type electron source is adopted as the auxiliary electron source 9, compared with the case where a filament or a Spindt type electron source is adopted as the auxiliary electron source 9, the initial amount of electrons emitted from the auxiliary electron source 9 is increased. Since the energy is increased, the effect of improving the excitation efficiency of the discharge gas and the effect of reducing the starting voltage and sustain voltage of the discharge plasma can be obtained more reliably.

  By the way, the control part 7 of this embodiment synchronizes with the timing (namely, timing which applies a voltage between a pair of electrodes 3 and 3) with which energy is supplied to discharge gas by an energy supply means, 4th power supply V4. And a driving voltage is applied between the surface electrode 93 and the lower electrode 91 of the auxiliary electron source 9. For example, in this embodiment, the timing at which the light source 6 is turned on and the timing at which the drive voltage is applied between the surface electrode 93 and the lower electrode 91 of the auxiliary electron source 9 are set to the same timing. Note that the timing for turning on the light source 6 and the timing for applying the drive voltage between the surface electrode 93 and the lower electrode 91 of the auxiliary electron source 9 do not have to be the same timing, and are operated at different timings. May be.

  According to the discharge plasma generation auxiliary device of the present embodiment described above, electrons can be supplied not only from the electron source 4 but also from the auxiliary electron source 9 to the discharge plasma generation space in the hermetic vessel 2, so that the discharge gas is excited. The effect of improving the efficiency and the effect of reducing the starting voltage and sustaining voltage of the discharge plasma can be obtained more stably. Further, as compared with the case where a hot cathode electron source such as a filament or a Spindt type electron source which is a kind of cold cathode electron source is adopted as the auxiliary electron source 9, electrons emitted from the auxiliary electron source 9 are reduced. Since the initial energy is increased, the effect of improving the excitation efficiency of the discharge gas, the effect of reducing the starting voltage of the discharge plasma, and the effect of reducing the sustaining voltage of the discharge plasma can be obtained more reliably.

  In addition, the effect of improving the excitation efficiency of the discharge gas and the effect of reducing the starting voltage and sustaining voltage of the discharge plasma supply electrons from the electron source 4 into the discharge gas while applying a voltage between the pair of electrodes 3 and 3. In view of the fact that it is not necessary to supply electrons from the electron source 4 into the discharge gas when no voltage is applied between the pair of electrodes 3, 3, the energy supply means The driving voltage is applied between the lower electrode 91 and the surface electrode 93 of the auxiliary electron source 9 in synchronization with the timing at which energy is supplied to the discharge gas (that is, the timing at which voltage is applied between the pair of electrodes 3 and 3). Since the voltage is applied, the time to turn on the fourth power source V4 can be shortened compared with the case where electrons are emitted from the auxiliary electron source 9 from beginning to end, and the power consumption of the fourth power source V4 can be suppressed. The effect To.

  Incidentally, in the discharge plasma generation assisting device shown in FIG. 10, the auxiliary electron source 9 is arranged in the vicinity of one electrode 3 (left electrode 3 in FIG. 10) in the hermetic container 2, but such auxiliary The electron source 9 may serve as either or both of the pair of electrodes 3 and 3 of the light emitting device 1. In this way, the number of parts of the light emitting device 1 can be reduced, the structure can be simplified, and the manufacturing process can be simplified. As a result, the cost of the light emitting device 1 can be reduced. Furthermore, since electrons can be directly supplied from the auxiliary electron source 9 to the discharge plasma generation space S, there is an effect that discharge plasma can be easily generated.

  In addition, as shown in FIG. 12, a protective cover 94 may be provided so as to surround the auxiliary electron source 9 and protect the auxiliary electron source 9 from discharge plasma ions.

  The protective cover 94 is formed in a rectangular parallelepiped shape whose rear wall (lower wall in FIG. 12) is opened by an insulating material (for example, an insulating resin such as a fluorine-based resin, an insulating ceramic, etc.). The auxiliary electron source 9 is covered so as to cover the surface of the surface electrode 93 which is the electron emission surface. In addition, an opening through which electrons emitted from the auxiliary electron source 9 pass is formed in the front wall of the protective cover 94 facing the electron emission surface of the auxiliary electron source 9 in a state where the auxiliary cover 94 is covered with the auxiliary electron source 9. A portion 94a is provided.

  By providing such a protective cover 94, the auxiliary electron source 9 can be protected from the ions of the discharge plasma, and the life of the auxiliary electron source 9 can be extended.

  In addition, a conductive cover 95 is disposed on the front wall of the protective cover 94 so as to overlap the opening 94a. The conductive cover 95 is formed in a plate shape using a conductive material (for example, nickel, stainless steel, aluminum, etc.). The conductive cover 95 is provided with a plurality of holes 95a for allowing electrons that have passed through the opening 94a of the protective cover 94 to pass therethrough. The opening shape of the hole 95a may be a circular shape or a square shape. The conductive cover 95 preferably has a mesh shape.

  Then, if a potential is applied to the conductive cover 95 so that the conductive cover 95 has the same potential as the surface electrode 93 of the auxiliary electron source 9, electrons emitted from the auxiliary electron source 9 can be transferred to the conductive cover 95. It is possible to prevent discharge plasma from entering the protective cover 94 from the opening 94a of the protective cover 94 and damaging the auxiliary electron source 9 while being sufficiently passed through the hole portion 95a.

  On the other hand, a potential may be applied to the conductive cover 95 so that the conductive cover 95 is at a higher potential than the surface electrode 93 of the auxiliary electron source 9. Since the electrons emitted from the auxiliary electron source 9 are accelerated by the voltage applied to the electron source 9 so as to move to the conductive cover 95 side, the potential of the conductive cover 95 is set to the surface of the auxiliary electron source 9. Compared with the case where the potential is the same as that of the electrode 93, electrons can be easily passed through the hole 95 a of the conductive cover 95. In addition, since a conductive cover 95 is applied between the auxiliary electron source 9 and the discharge plasma generation space S to give a potential higher than the potential of the auxiliary electron source 9, the ions of the discharge plasma are absorbed by the auxiliary electron source 9. The discharge plasma can be further prevented from entering the protective cover 94 from the opening 94a of the protective cover 94 and damaging the auxiliary electron source 9, and the auxiliary electron source 9 There is an effect that the life can be extended.

  Incidentally, the conductive cover 95 may serve as either or both of the pair of electrodes 3 and 3, and in this way, the auxiliary electron source 9 can be used as the auxiliary electron source 9 as compared with the case where the auxiliary electron source 9 also serves as the electrode 3. 9 can be separated from the discharge plasma generation space S, and the life of the auxiliary electron source 9 can be extended. In this case, if the conductive cover 95 is applied with a potential so as to be higher than the surface electrode 93 of the auxiliary electron source 9, the voltage between the conductive cover 95 and the auxiliary electron source 9 causes the auxiliary electron source 9 to Since the emitted electrons can be accelerated and supplied to the discharge plasma generation space S, discharge plasma can be easily generated.

  In addition, although the discharge plasma production auxiliary | assistance apparatus of this embodiment has shown the example which provided the auxiliary electron source 9 in the discharge plasma production auxiliary | assistance apparatus of Embodiment 1, of course, the discharge plasma production auxiliary | assistance apparatus of Embodiments 2-5 is shown. Auxiliary electron source 9 may be provided.

  By the way, the energy supply means of each of the embodiments described above has a pair of electrodes 3 and 3 arranged in the cylindrical airtight container 2 so as to be spaced apart in the longitudinal direction of the airtight container 2 as shown in FIG. Although the thing is used, arrangement | positioning and a structure of an energy supply means are not limited to what is shown to Fig.13 (a).

  For example, the energy supply means may be constituted by an induction coil 30 wound close to the hermetic container 2 outside the cylindrical hermetic container 2 as shown in FIG. As shown in c), a pair of planar electrodes 31, 31 arranged along the longitudinal direction of the hermetic container 2 outside the cylindrical hermetic container 2 may be used.

  Alternatively, as shown in FIG. 13 (d), an electrode 3 disposed at one end in the longitudinal direction inside the hermetic container 2 and a planar electrode disposed along the longitudinal direction of the hermetic container 2 outside the hermetic container 2. And at least one (two in the illustrated example) annular electrode 32 disposed outside the cylindrical airtight container 2 as shown in FIG. Alternatively, it may be configured by two pairs of electrodes 3, 3, 3, and 3 disposed inside the cylindrical airtight container 2 as shown in FIG.

  In addition, as shown in FIG. 13 (g), a plurality (five in the illustrated example) of annular electrodes arranged at predetermined intervals in the longitudinal direction of the hermetic container 2 outside the cylindrical hermetic container 2 32, or a plurality (in the example shown, five in the illustrated example) arranged at predetermined intervals in the longitudinal direction of the hermetic container 2 outside the cylindrical hermetic container 2 as shown in FIG. 13 (h). ) Planar electrode 33 may be used. Further, as shown in FIG. 13 (i), it may be constituted by a pair of electrodes 3 and 3 arranged in a rectangular parallelepiped hermetic container 2 so that the normal directions are orthogonal to each other. ), A pair of electrodes 3 and 3 arranged in parallel inside the rectangular parallelepiped hermetic container 2 may be used.

  Note that the voltage applied to the energy supply means as described above may be appropriately selected from a DC voltage, an AC voltage, a pulse voltage, and the like. Here, when the plurality of electrodes 32 are arranged at predetermined intervals in the longitudinal direction of the airtight container 2 as shown in FIG. 13G as the energy supply means, for example, the adjacent electrodes 32 are different from each other. A plurality of electrodes 32 are divided into two electrode groups and connected so as to form an electrode group, and a rectangular wave AC voltage applied to one electrode group and an AC voltage applied to the other electrode group have opposite phases. As a result, even when the dimension of the hermetic container 2 in the longitudinal direction is relatively long, it is possible to generate discharge plasma over substantially the entire length of the hermetic container 2.

  Similarly, when a plurality of electrodes 33 are arranged at predetermined intervals in the longitudinal direction of the hermetic container 2 as shown in FIG. 13 (h), for example, the adjacent electrodes 33 form different electrode groups. Thus, the plurality of electrodes 33 may be divided into two sets of electrode groups and connected, and the rectangular wave AC voltage applied to one electrode group and the AC voltage applied to the other electrode group may be in opposite phases. In this way, as in the example shown in FIG. 13G, it is possible to generate discharge plasma over substantially the entire length of the hermetic container 2 even when the dimension in the longitudinal direction of the hermetic container 2 is relatively long. Become.

  By the way, in each said embodiment, although the ultraviolet lamp was illustrated as a light-emitting device, a light-emitting device is not restricted to an ultraviolet lamp, For example, the fluorescent lamp for lighting fixtures, a plasma display panel (PDP), etc. may be sufficient. In this case, as shown in FIG. 14A, a phosphor layer FL that emits light when excited by ultraviolet rays may be provided at an appropriate portion of the inner surface of the hermetic container 2.

  Further, in each of the above embodiments, the entire hermetic container 2 is formed of a translucent material, but the hermetic container 2 is at least partially as shown in FIGS. 14B and 14C, for example. What provided the translucent board 2b which is a translucent part may be used.

  The airtight container 2 of FIGS. 14B and 14C includes a main body 2a formed in a rectangular parallelepiped box shape having one surface opened using a material that does not have translucency, and a translucent material (for example, And a translucent plate 2b which is a translucent portion formed in a rectangular plate shape that closes the opening on one surface of the main body 2a using glass or the like.

  When such an airtight container 2 is used, the above-described electron source 4 (see FIGS. 1 and 4 to 7) is provided in a position in the airtight container 2 where light can be received via the light transmitting plate 2b. (Not shown) may be provided at a position where the electron source 4 can be irradiated with light through the translucent plate 2b. Other components such as the anode electrode 5 are as described in the first embodiment.

  Here, in the light emitting device 1 shown in FIG. 14B, ultraviolet rays are emitted to the outside of the airtight container 2 through the light transmitting plate 2b, and in the light emitting device 1 shown in FIG. 14C, light is emitted from the phosphor layer FL. Visible light is radiated to the outside of the airtight container 2 through the translucent plate 2b.

  Moreover, the light-emitting device 1 provided with the discharge plasma production | generation auxiliary | assistance apparatus of each said embodiment can be utilized for the lighting fixture 10 as shown, for example to Fig.15 (a)-(c). A lighting fixture 10 shown in FIGS. 15A to 15C is a so-called Fuji-type lighting fixture, and has a fixture body 11 attached to a construction surface such as a ceiling surface, and both longitudinal ends of the fixture body 11. Each pair of sockets 12 provided, a reflecting plate 13 having a V-shaped cross section attached to the instrument body 11 so as to cover the instrument body 11, and held between the sockets 12 so that the longitudinal direction thereof coincides with the instrument body 11 Are provided with two straight tube lamps 14 and a lighting device (not shown) for lighting the two lamps 14.

  Here, by providing the lamp 14 with the electron source 4 and the anode electrode 5, if necessary, the extraction electrode 8 and the auxiliary electron source 9, the light source 6 in the fixture body 11, and the control unit 7 in the lighting device, The lighting fixture using the light emitting device including the discharge plasma generation assisting device according to the embodiment can be realized. According to this lighting fixture, the life can be extended, the effect of improving the excitation efficiency of the discharge gas, and the discharge plasma. The effect of reducing the starting voltage and the sustaining voltage can be obtained stably. In addition, since the starting voltage and sustaining voltage of the discharge plasma can be reduced, there is an effect that power consumption can be reduced. In addition, there is an effect that the luminous efficiency can be improved.

It is a schematic block diagram of the light-emitting device using the discharge plasma production auxiliary device in Embodiment 1. It is operation | movement explanatory drawing of a discharge plasma production | generation auxiliary | assistance apparatus same as the above. It is a schematic block diagram of the light-emitting device using the other example of the discharge plasma production auxiliary | assistance apparatus same as the above. The electron source of the discharge plasma production auxiliary | assistance apparatus of Embodiment 2 is shown, (a) is a schematic sectional drawing, (b) is a schematic plan view. It is a schematic explanatory drawing which shows the other example of the electron source same as the above. The electron source of the discharge plasma production auxiliary | assistance apparatus of Embodiment 3 is shown, (a) is a schematic sectional drawing, (b) is a schematic plan view. The electron source of the discharge plasma production auxiliary | assistance apparatus of Embodiment 4 is shown, (a) is a schematic sectional drawing, (b) is a schematic plan view. (A) is a schematic block diagram of the light-emitting device using the discharge plasma production auxiliary | assistance apparatus in Embodiment 5, (b) is a top view of the extraction electrode used for the same. It is a top view which shows the other example of the extraction electrode used for the same as the above. It is a schematic block diagram of the light-emitting device using the discharge plasma production auxiliary | assistance apparatus in the discharge plasma production auxiliary | assistance apparatus of Embodiment 6. FIG. The auxiliary electron source used for the above is shown, (a) is a schematic sectional view, and (b) is an operation explanatory diagram. It is a schematic sectional drawing which shows the other example of the auxiliary electron source same as the above. It is a schematic explanatory drawing which shows the other example of the energy supply means in the same as the above. It is a schematic explanatory drawing which shows the example of the light-emitting device same as the above. The lighting fixture using the light-emitting device provided with the discharge plasma production auxiliary | assistance apparatus of this invention is shown, (a) is a front view, (b) is a bottom view, (c) is a side view. It is a schematic explanatory drawing of a light-emitting device provided with the conventional discharge plasma production auxiliary | assistance apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Light-emitting device 2 Airtight container 3 Electrode (energy supply means)
4 Electron source 5 Anode electrode 6 Light source 7 Control unit (control means)
8 Extraction electrode 8b Hole 9 Auxiliary electron source 40 Support member 41 Photoelectric conversion film 91 Lower electrode 92 Strong electric field drift layer 92c Silicon microcrystal (semiconductor microcrystal)
92d Silicon oxide film (insulating film)
93 Surface electrode S Discharge plasma generation space

Claims (11)

  An airtight container in which a light-transmitting part is provided at least in part and sealed with a discharge gas, and is disposed in at least one of the inside and the outside of the airtight container to supply energy to the discharge gas to cause discharge to generate discharge plasma. A discharge plasma generation assisting device used in a light emitting device having an energy supply means, which absorbs light that is installed in an airtight container and enters the airtight container from the outside through a light-transmitting portion of the airtight container So that a desired discharge plasma generation space in the hermetic container is located between the electron source configured using a photoelectric conversion film that emits electrons and the electron source so as to have a higher potential than the electron source. A discharge plasma generation auxiliary device comprising an anode electrode to which a potential is applied.   The electron source includes a plate-like support member, the support member is provided with a plurality of openings that penetrate in the thickness direction of the support member, and the photoelectric conversion film is provided on the inner surface of the opening of the support member. The discharge plasma generation auxiliary device according to claim 1, wherein   3. The discharge plasma generation auxiliary device according to claim 2, wherein the opening of the support member is formed in a reverse taper shape in which the opening area decreases as it approaches the discharge plasma generation space.   The discharge plasma generation according to claim 2 or 3, wherein a photoelectric conversion section that emits electrons by absorbing light inside the hermetic container is provided on a surface of the support member facing the discharge plasma generation space. Auxiliary device.   5. The discharge plasma generation auxiliary device according to claim 1, further comprising a light source that irradiates light to the electron source from the outside of the hermetic container through a light-transmitting portion.   6. A control means for controlling the operation of the light source is provided, and the control means is configured to operate the light source in synchronization with a timing at which energy is supplied to the discharge gas by the energy supply means. The discharge plasma generation auxiliary device as described.   An extraction electrode is provided between the discharge plasma generation space and the electron source, has an electron passage hole, and is provided with an extraction electrode to which a potential is applied so that the potential is lower than the anode electrode and higher than the electron source. The discharge plasma generation auxiliary device according to any one of claims 1 to 6.   8. An auxiliary electron source comprising a hot cathode type electron source or a cold cathode type electron source that is arranged in an airtight container and supplies electrons into a discharge gas. The discharge plasma generation auxiliary device as described.   The auxiliary electron source is formed on the surface of a lower electrode, a surface electrode facing the lower electrode, a large number of nanometer-order semiconductor microcrystals and each semiconductor microcrystal interposed between the lower electrode and the surface electrode. 9. A cold cathode electron source comprising a ballistic electron surface emission electron source provided with a strong electric field drift layer having a number of insulating films having a thickness smaller than the crystal grain size of the crystal. Discharge plasma generation auxiliary device.   A light-emitting device comprising the discharge plasma generation auxiliary device according to claim 1.   A lighting apparatus comprising the light emitting device according to claim 10.

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