JP4856173B2 - 負の指数のメタ材料(nim)を使用するスミス−パーセル放射源 - Google Patents
負の指数のメタ材料(nim)を使用するスミス−パーセル放射源 Download PDFInfo
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- JP4856173B2 JP4856173B2 JP2008510001A JP2008510001A JP4856173B2 JP 4856173 B2 JP4856173 B2 JP 4856173B2 JP 2008510001 A JP2008510001 A JP 2008510001A JP 2008510001 A JP2008510001 A JP 2008510001A JP 4856173 B2 JP4856173 B2 JP 4856173B2
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- 230000005855 radiation Effects 0.000 title claims abstract description 43
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 10
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- 238000012306 spectroscopic technique Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/0903—Free-electron laser
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
- Physical Water Treatments (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Description
これは特定された帯域幅で反対の符合の屈折率を有する第1と第2の媒体間で形成されたインターフェース不連続性の周期的アレイによって実現される。荷電粒子ビームは周期的なアレイを横切って導かれ、それによって特定化された帯域幅において強化されたスミス−パーセル電磁放射を発生する。正と負の指数の媒体間のインターフェースで発生された消失性の波の反射および透過係数は既知のスミス−パーセル放射源の場合のような同じ指数の符合の2つの媒体間の表面で発生されたものよりも大きさが遥かに大きい。摂動の意味では、格子変調は入射ビームと全ての回折ビームとの間の結合を生じ、表面波の消失性の成分が介在する。結果として、スミス−パーセル放射源により放射される放射の強度は著しく強化される。
Claims (9)
- 材料の屈折率が共振帯域幅(49)では負である負の指数のメタ材料(NIM)(28)から形成されている格子(34)と、
共振帯域幅内の共振波長(48)で電磁放射(32)を発生する荷電粒子ビーム(24)を格子を横切って導くソース(22)とを具備し、
さらに、格子に沿って、間隔をおいて、第1の媒体と第2の媒体との間で形成されるインターフェース不連続部の選択された位置に正の屈折率を有する材料(52)が配置されている放射源。 - 特定された帯域幅は0.3×1012Hz乃至10×1012Hzである請求項1記載の放射源。
- 前記ソースは特定された帯域幅内の電磁放射の波長を変化するために荷電粒子ビームの電圧を変調する請求項1記載の放射源。
- 前記NIMは多次元の共振構造(36)を有している請求項1記載の放射源。
- 材料の屈折率が共振帯域幅(49)では負である負の指数のメタ材料(NIM)(28)から形成されている格子(34)と、共振帯域幅内の共振波長(48)で電磁放射(32)を発生する荷電粒子ビーム(24)を格子を横切って導くソース(22)とを具備し、格子に沿って、間隔をおいて、第1の媒体と第2の媒体との間で形成されるインターフェース不連続部の選択された位置に正の屈折率を有する材料(52)が配置されている放射源を使用し、
負の指数のメタ材料(NIM)(28)で形成される格子(24)を横切って荷電粒子ビーム(24)を誘導するステップを含んでいる電磁放射の発生方法。 - 前記NIMは共振帯域幅(49)内で負の屈折率を有し、前記電磁放射は前記共振帯域幅内の格子の共振波長(48)で発生される請求項5記載の方法。
- 特定された帯域幅は0.3×1012Hz乃至10×1012Hzである請求項5記載の放射源。
- さらに、前記電磁放射の波長を変化するために荷電粒子ビームの電圧を変調するステップを含んでいる請求項5載の方法。
- 前記NIMは多次元の共振構造(36)を有している請求項5載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/120,451 US7397055B2 (en) | 2005-05-02 | 2005-05-02 | Smith-Purcell radiation source using negative-index metamaterial (NIM) |
US11/120,451 | 2005-05-02 | ||
PCT/US2006/010128 WO2006118681A1 (en) | 2005-05-02 | 2006-03-21 | Smith-purcell radiation source using negative-index metamaterial (nim) |
Publications (2)
Publication Number | Publication Date |
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JP2008541425A JP2008541425A (ja) | 2008-11-20 |
JP4856173B2 true JP4856173B2 (ja) | 2012-01-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008510001A Active JP4856173B2 (ja) | 2005-05-02 | 2006-03-21 | 負の指数のメタ材料(nim)を使用するスミス−パーセル放射源 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7397055B2 (ja) |
EP (1) | EP1878097B1 (ja) |
JP (1) | JP4856173B2 (ja) |
AT (1) | ATE430392T1 (ja) |
DE (1) | DE602006006563D1 (ja) |
ES (1) | ES2326433T3 (ja) |
IL (1) | IL182944A (ja) |
WO (1) | WO2006118681A1 (ja) |
Families Citing this family (38)
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US8114489B2 (en) * | 2001-05-23 | 2012-02-14 | The Regents Of The University Of California | Composite material having low electromagnetic reflection and refraction |
EP2899015B1 (en) * | 2002-08-29 | 2019-04-10 | The Regents of The University of California | Indefinite materials |
CN101389998B (zh) | 2004-07-23 | 2012-07-04 | 加利福尼亚大学董事会 | 特异材料 |
US7586097B2 (en) | 2006-01-05 | 2009-09-08 | Virgin Islands Microsystems, Inc. | Switching micro-resonant structures using at least one director |
US7626179B2 (en) | 2005-09-30 | 2009-12-01 | Virgin Island Microsystems, Inc. | Electron beam induced resonance |
US7791290B2 (en) | 2005-09-30 | 2010-09-07 | Virgin Islands Microsystems, Inc. | Ultra-small resonating charged particle beam modulator |
DE102005052208A1 (de) * | 2005-10-26 | 2007-05-10 | Universität Stuttgart | Metamaterial mit der Fähigkeit zur linkshändigen Leitung elektromagnetischer Wellen |
US7443358B2 (en) | 2006-02-28 | 2008-10-28 | Virgin Island Microsystems, Inc. | Integrated filter in antenna-based detector |
US7646991B2 (en) | 2006-04-26 | 2010-01-12 | Virgin Island Microsystems, Inc. | Selectable frequency EMR emitter |
US7876793B2 (en) | 2006-04-26 | 2011-01-25 | Virgin Islands Microsystems, Inc. | Micro free electron laser (FEL) |
US7718977B2 (en) | 2006-05-05 | 2010-05-18 | Virgin Island Microsystems, Inc. | Stray charged particle removal device |
US7656094B2 (en) | 2006-05-05 | 2010-02-02 | Virgin Islands Microsystems, Inc. | Electron accelerator for ultra-small resonant structures |
US7728397B2 (en) | 2006-05-05 | 2010-06-01 | Virgin Islands Microsystems, Inc. | Coupled nano-resonating energy emitting structures |
US8188431B2 (en) | 2006-05-05 | 2012-05-29 | Jonathan Gorrell | Integration of vacuum microelectronic device with integrated circuit |
US7732786B2 (en) | 2006-05-05 | 2010-06-08 | Virgin Islands Microsystems, Inc. | Coupling energy in a plasmon wave to an electron beam |
US7710040B2 (en) * | 2006-05-05 | 2010-05-04 | Virgin Islands Microsystems, Inc. | Single layer construction for ultra small devices |
US7728702B2 (en) | 2006-05-05 | 2010-06-01 | Virgin Islands Microsystems, Inc. | Shielding of integrated circuit package with high-permeability magnetic material |
US7986113B2 (en) | 2006-05-05 | 2011-07-26 | Virgin Islands Microsystems, Inc. | Selectable frequency light emitter |
US7741934B2 (en) | 2006-05-05 | 2010-06-22 | Virgin Islands Microsystems, Inc. | Coupling a signal through a window |
US7746532B2 (en) | 2006-05-05 | 2010-06-29 | Virgin Island Microsystems, Inc. | Electro-optical switching system and method |
US7436177B2 (en) * | 2006-05-05 | 2008-10-14 | Virgin Islands Microsystems, Inc. | SEM test apparatus |
US7723698B2 (en) | 2006-05-05 | 2010-05-25 | Virgin Islands Microsystems, Inc. | Top metal layer shield for ultra-small resonant structures |
US7679067B2 (en) | 2006-05-26 | 2010-03-16 | Virgin Island Microsystems, Inc. | Receiver array using shared electron beam |
US7655934B2 (en) | 2006-06-28 | 2010-02-02 | Virgin Island Microsystems, Inc. | Data on light bulb |
US7659513B2 (en) | 2006-12-20 | 2010-02-09 | Virgin Islands Microsystems, Inc. | Low terahertz source and detector |
US7990336B2 (en) | 2007-06-19 | 2011-08-02 | Virgin Islands Microsystems, Inc. | Microwave coupled excitation of solid state resonant arrays |
EP2009740A1 (de) * | 2007-06-27 | 2008-12-31 | Technische Universität München | Metamaterial |
US7791053B2 (en) | 2007-10-10 | 2010-09-07 | Virgin Islands Microsystems, Inc. | Depressed anode with plasmon-enabled devices such as ultra-small resonant structures |
US7745790B2 (en) * | 2007-11-20 | 2010-06-29 | Alcatel-Lucent Usa Inc. | Negative refractive index device for generating terahertz or microwave radiation and method of operation thereof |
US7773033B2 (en) * | 2008-09-30 | 2010-08-10 | Raytheon Company | Multilayer metamaterial isolator |
US8350777B2 (en) * | 2010-02-18 | 2013-01-08 | Raytheon Company | Metamaterial radome/isolator |
CN102081274A (zh) * | 2010-12-22 | 2011-06-01 | 四川大学 | 一种基于二氧化钒薄膜相变特性的太赫兹波调制装置及其方法 |
CN102303429B (zh) * | 2011-06-21 | 2014-04-09 | 电子科技大学 | 一种可调谐的平板电磁波吸收材料 |
ES2574406T3 (es) * | 2011-06-28 | 2016-06-17 | Kuang-Chi Innovative Technology Ltd. | Metamaterial y antena de metamaterial |
CN102593692A (zh) * | 2011-12-21 | 2012-07-18 | 电子科技大学 | 一种表面等离子体波切伦科夫辐射源 |
CN107706702B (zh) * | 2017-09-26 | 2019-07-23 | 中国科学技术大学 | 一种电磁波辐射系统以及方法 |
CN108808426B (zh) * | 2018-04-27 | 2020-03-06 | 电子科技大学 | 一种基于光子晶体与光栅组合的逆Smith-Purcell辐射源及产生方法 |
CN111799640B (zh) * | 2020-06-24 | 2021-07-27 | 清华大学 | 基于受激放大相干spr辐射的太赫兹辐射器 |
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US5268693A (en) * | 1990-08-31 | 1993-12-07 | Trustees Of Dartmouth College | Semiconductor film free electron laser |
AU2002212974A1 (en) * | 2000-09-22 | 2002-04-02 | Vermont Photonics | Apparatuses and methods for generating coherent electromagnetic laser radiation |
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Publication number | Publication date |
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EP1878097A1 (en) | 2008-01-16 |
US7397055B2 (en) | 2008-07-08 |
IL182944A0 (en) | 2007-09-20 |
US20060243925A1 (en) | 2006-11-02 |
WO2006118681A1 (en) | 2006-11-09 |
ATE430392T1 (de) | 2009-05-15 |
IL182944A (en) | 2010-12-30 |
ES2326433T3 (es) | 2009-10-09 |
EP1878097B1 (en) | 2009-04-29 |
DE602006006563D1 (de) | 2009-06-10 |
JP2008541425A (ja) | 2008-11-20 |
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