JP4837320B2 - 加工対象物切断方法 - Google Patents
加工対象物切断方法 Download PDFInfo
- Publication number
- JP4837320B2 JP4837320B2 JP2005207559A JP2005207559A JP4837320B2 JP 4837320 B2 JP4837320 B2 JP 4837320B2 JP 2005207559 A JP2005207559 A JP 2005207559A JP 2005207559 A JP2005207559 A JP 2005207559A JP 4837320 B2 JP4837320 B2 JP 4837320B2
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- along
- cutting line
- laser light
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005520 cutting process Methods 0.000 title claims description 174
- 238000012545 processing Methods 0.000 title claims description 120
- 238000000034 method Methods 0.000 title claims description 31
- 238000003672 processing method Methods 0.000 claims description 60
- 238000010521 absorption reaction Methods 0.000 claims description 41
- 230000010287 polarization Effects 0.000 claims description 32
- 230000001678 irradiating effect Effects 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000002844 melting Methods 0.000 claims description 21
- 230000008018 melting Effects 0.000 claims description 21
- 238000010128 melt processing Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 235000012431 wafers Nutrition 0.000 description 37
- 229910052710 silicon Inorganic materials 0.000 description 35
- 239000010703 silicon Substances 0.000 description 35
- 238000003384 imaging method Methods 0.000 description 21
- 239000011521 glass Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 230000005684 electric field Effects 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000002834 transmittance Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000006378 damage Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005207559A JP4837320B2 (ja) | 2000-09-13 | 2005-07-15 | 加工対象物切断方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000278306 | 2000-09-13 | ||
| JP2000278306 | 2000-09-13 | ||
| JP2005207559A JP4837320B2 (ja) | 2000-09-13 | 2005-07-15 | 加工対象物切断方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001278752A Division JP3722731B2 (ja) | 2000-09-13 | 2001-09-13 | レーザ加工方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006056690A Division JP3867109B2 (ja) | 2000-09-13 | 2006-03-02 | レーザ加工方法 |
| JP2006069993A Division JP3867110B2 (ja) | 2000-09-13 | 2006-03-14 | レーザ加工方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005313237A JP2005313237A (ja) | 2005-11-10 |
| JP2005313237A5 JP2005313237A5 (enExample) | 2009-02-19 |
| JP4837320B2 true JP4837320B2 (ja) | 2011-12-14 |
Family
ID=35441201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005207559A Expired - Lifetime JP4837320B2 (ja) | 2000-09-13 | 2005-07-15 | 加工対象物切断方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4837320B2 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
| US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
| AU2003211581A1 (en) | 2002-03-12 | 2003-09-22 | Hamamatsu Photonics K.K. | Method of cutting processed object |
| TWI326626B (en) | 2002-03-12 | 2010-07-01 | Hamamatsu Photonics Kk | Laser processing method |
| DE60313900T2 (de) | 2002-03-12 | 2008-01-17 | Hamamatsu Photonics K.K., Hamamatsu | Methode zur Trennung von Substraten |
| TWI520269B (zh) | 2002-12-03 | 2016-02-01 | 濱松赫德尼古斯股份有限公司 | Cutting method of semiconductor substrate |
| FR2852250B1 (fr) | 2003-03-11 | 2009-07-24 | Jean Luc Jouvin | Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau |
| WO2004080643A1 (ja) | 2003-03-12 | 2004-09-23 | Hamamatsu Photonics K.K. | レーザ加工方法 |
| JP4563097B2 (ja) | 2003-09-10 | 2010-10-13 | 浜松ホトニクス株式会社 | 半導体基板の切断方法 |
| JP5328209B2 (ja) * | 2007-06-15 | 2013-10-30 | 三菱電機株式会社 | 基板加工方法 |
| CN103025478B (zh) * | 2010-07-26 | 2015-09-30 | 浜松光子学株式会社 | 基板加工方法 |
| WO2012014722A1 (ja) * | 2010-07-26 | 2012-02-02 | 浜松ホトニクス株式会社 | 基板加工方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59150691A (ja) * | 1983-02-15 | 1984-08-28 | Matsushita Electric Ind Co Ltd | レ−ザ加工機 |
| JP2810151B2 (ja) * | 1989-10-07 | 1998-10-15 | ホーヤ株式会社 | レーザマーキング方法 |
| JP3024990B2 (ja) * | 1990-08-31 | 2000-03-27 | 日本石英硝子株式会社 | 石英ガラス材料の切断加工方法 |
| JPH04339586A (ja) * | 1991-05-13 | 1992-11-26 | Mitsubishi Electric Corp | レーザ加工装置 |
| JP3352934B2 (ja) * | 1998-01-21 | 2002-12-03 | 理化学研究所 | 高強度超短パルスレーザー加工方法およびその装置 |
| JP4132172B2 (ja) * | 1998-02-06 | 2008-08-13 | 浜松ホトニクス株式会社 | パルスレーザ加工装置 |
-
2005
- 2005-07-15 JP JP2005207559A patent/JP4837320B2/ja not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
| US11219966B1 (en) | 2018-12-29 | 2022-01-11 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
| US11826846B2 (en) | 2018-12-29 | 2023-11-28 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
| US11901181B2 (en) | 2018-12-29 | 2024-02-13 | Wolfspeed, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
| US11911842B2 (en) | 2018-12-29 | 2024-02-27 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
| US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
| US11034056B2 (en) | 2019-05-17 | 2021-06-15 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
| US11654596B2 (en) | 2019-05-17 | 2023-05-23 | Wolfspeed, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
| US12070875B2 (en) | 2019-05-17 | 2024-08-27 | Wolfspeed, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005313237A (ja) | 2005-11-10 |
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