JP4837227B2 - Deposition equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an element (hereinafter referred to as a light emitting element) having a structure in which a thin film (hereinafter referred to as a light emitting layer) that emits light is sandwiched between an anode, a cathode, and a phenomenon called electroluminescence. In the technical field related to a display device (hereinafter referred to as a light-emitting device) provided on a substrate and the technical field related to an electronic device including the light-emitting device in a video display unit.
[0002]
[Prior art]
In recent years, development of light-emitting devices called organic light-emitting panels or organic light-emitting diodes has been urgently developed as video display. This is because a hole and an electron are recombined in a light emitting layer provided between an electrode for injecting holes (hereinafter referred to as an anode) and an electrode for injecting electrons (hereinafter referred to as a cathode). Thus, a light emission phenomenon called electroluminescence is generated, and image display is made possible by controlling on / off of the light emission.
[0003]
Organic light-emitting elements have characteristics such as thin and light weight, high-speed response, and direct current low voltage drive, and are attracting attention as next-generation flat panel display elements. Further, since it is a self-luminous type and has a wide viewing angle, the visibility is relatively good, and it is considered to be particularly effective as an element used for an in-vehicle display screen or a display screen of a portable device. In fact, some car audios for vehicles use an organic light emitting element for an area color display screen.
[0004]
Furthermore, the organic light-emitting element is also characterized by being rich in variations in emission color. The reason for such richness of color is the diversity of the organic compounds themselves. In other words, the flexibility that various light emitting color materials can be developed by molecular design (for example, introduction of substituents) or the like gives rise to rich colors.
[0005]
From these viewpoints, it is no exaggeration to say that the largest application field of organic light-emitting elements is a full-color display device as well as a mono-color or area-color display device. Various full-color methods have been devised in consideration of the characteristics of organic light-emitting elements. For example, a method in which organic light-emitting elements that emit light of the three primary colors red, green, and blue are painted using shadow mask technology and each pixel is used (hereinafter referred to as a “painting method”). Alternatively, a method of obtaining the three primary colors of light by using a blue organic light emitting element as a light source and converting the blue light into green and red by a color conversion layer made of an organic fluorescent material (hereinafter referred to as “CCM method”) Or a method of obtaining the three primary colors of light by using a white organic light emitting element as a light source and providing a color filter used in a liquid crystal display device (hereinafter referred to as “CF method”), etc. There is.
[0006]
In any of these configurations, passive matrix driving (simple matrix type) or active matrix driving (active matrix type) is applied to a display device formed by arranging organic light-emitting elements as pixels in a matrix. The drive method like this is used. Note that when the pixel density increases, an active matrix type in which a switch (for example, a non-linear element such as a transistor) is provided for each pixel is said to be advantageous because it can be driven at a low voltage.
[0007]
As the light-emitting layer used in these light-emitting devices, organic thin films are mainly used, and low-molecular materials were mainly formed by vapor deposition, but recently, attention has been focused on polymer materials. Development of a solution coating method such as a spin coating method, an ink jet method, and a printing method is actively progressing. In particular, the film formation of an organic thin film by the ink jet method has already approached a practical level, and the basic technique is disclosed in Patent Document 1 and the like.
[0008]
The ink-jet method is a technology that diverts the ink-jet method used in conventional printers to thin film formation, and instead of ink, the solute that is the material of the organic thin film is dissolved or dispersed in a solvent such as water or alcohol. This is a method of applying liquid droplets for each pixel. Naturally, since the droplets adhering onto the pixels (actually the pixel electrodes provided on each pixel) contain a large amount of solvent component, a process for volatilizing the solvent component to remove this (hereinafter referred to as firing process) Is required). That is, after applying droplets by the inkjet method, the entire pixel is heated to volatilize the solvent component, and the remaining solute (organic thin film material) is thinned.
[0009]
In addition, the spin coating method is improved in that the substrate is rotated at a high speed and the excess coating liquid is sprinkled and scattered, so that the use efficiency of the material is low and the cost is particularly high when using an expensive organic material. It was a technology that left room.
[0010]
Compared with the spin coat method that coats the entire surface, the ink jet method in which several droplets are landed at a predetermined position is difficult to form a film with a uniform film thickness.
[0011]
As described above, the film formation method by the ink jet method is a low-cost and simple method, has the advantages of high throughput and high material utilization efficiency, but it is difficult to obtain a uniform film thickness. The technology left room for improvement.
[0012]
[Patent Document 1]
Japanese Patent Laid-Open No. 10-12377
[0013]
[Problems to be solved by the invention]
The present invention has been made in view of the above problems, and provides a technique for obtaining a uniform film thickness with high material utilization efficiency in a method of forming a thin film by applying a solution. Is an issue.
[0014]
[Means for Solving the Problems]
The present invention provides a solution containing an organic compound (typically a conductive polymer) toward a region (a region where a pixel electrode (anode or cathode) is exposed) separated by a partition wall (also called a bank or bank). Is sprayed by an ink jet method, a layer made of the conductive polymer is deposited on the pixel electrode, and then spin-rotated to make the film thickness uniform.
[0015]
In addition, the present invention is characterized in that the ink jet process is performed under atmospheric pressure or reduced pressure.
[0016]
In addition, the layer made of the conductive polymer is obtained by adding an acceptor or a donor to a polymer compound. For example, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS), poly (Ethylenedioxythiophene) / poly (styrene sulfonic acid) methanol solution, polyaniline / camphor sulfonic acid aqueous solution (PANI / CSA), PTPDES, Et-PTPDK, Baytron P (trade name VPA1 4083), or PPBA The layers obtained by firing can be used, and these layers function as a carrier injection layer and a carrier transport layer. In the present specification, these layers are also collectively referred to as PTF (Positive charge tranaparent & Transport Film). The conductivity of the layer made of the conductive polymer is 10 ^-2 S / cm or less is preferable.
[0017]
Note that the baking process may be a heat treatment under reduced pressure or a heat treatment under an inert gas atmosphere, and a light source such as a lamp is used as another heating means for the baking process to emit light having a wavelength longer than infrared light. May be irradiated.
[0018]
The spin rotation is performed under atmospheric pressure or reduced pressure. By keeping the spin rotation under reduced pressure, the film thickness can be made uniform without introducing impurities. Note that in the case where a layer common to each pixel is formed, a thin layer containing an organic compound may be formed not only on a region surrounded by the partition by spin rotation but also on the partition. By making the film thickness thinner as the distance from the pixel electrode on the gentle side wall of the partition wall, the coverage and film thickness uniformity of the film formed thereon can be improved. In particular, when irregularities and fine particles are present on the surface of the pixel electrode, defects called dark spots may occur, but these effects can be reduced by increasing the thickness of the layer made of a conductive polymer. Can be reduced.
[0019]
In addition, when the spin rotation is performed, a smaller amount of solution (a solution containing an organic compound or a solvent) may be dropped than in the spin coating method.
[0020]
A phosphor containing a phosphor composition is ejected under reduced pressure by an ink jet method onto a layer made of an organic compound material (such as a conductive polymer) having a uniform film thickness in this manner, and is deposited to constitute a phosphor. For example, cyanopolyphenylene vinylene may be used as a red light emitting material, polyphenylene vinylene may be used as a green light emitting material, and polyphenylene vinylene and polyalkylphenylene may be used as a blue light emitting material. In the case of performing lamination by an ink jet method, it is preferable to use a material (solvent) that does not change the layer formed previously by spraying and applying a solution to be performed later.
[0021]
When obtaining white light emission, the emission center dye (1,1,4,4-tetraphenyl-1,3-butadiene (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-styryl) ) -4H-pyran (DCM1), Nile Red, Coumarin 6 etc.) A doped polyvinylcarbazole (PVK) solution may be sprayed and applied. Forming a color filter provided with a colored layer (R) that absorbs light other than red light, a colored layer (G) that absorbs light other than green light, and a colored layer (B) that absorbs light other than blue light in the direction of white light emission. Thus, white light emission from the light emitting element can be separated and obtained as red light emission, green light emission, and blue light emission.
[0022]
Moreover, although the example which laminated | stacked the organic compound layer was shown here, an organic compound layer can also be made into a single layer. For example, an electron transporting 1,3,4-oxadiazole derivative (PBD) may be dispersed in hole transporting polyvinyl carbazole (PVK). Further, white light emission can be obtained by dispersing 30 wt% PBD as an electron transporting agent and dispersing an appropriate amount of four kinds of dyes (TPB, coumarin 6, DCM1, Nile red).
[0023]
Under reduced pressure (also referred to as vacuum) refers to a pressure lower than atmospheric pressure, and 1 × in an atmosphere filled with nitrogen, a rare gas, or other inert gas (hereinafter referred to as an inert atmosphere). 10 ² ~ 2x10 ^Four Pa (preferably 5 × 10 ² ~ 5x10 ^Three Pa). By setting the step in the ink jet method under reduced pressure, the solvent is always volatilized from the droplet until the droplet ejected into the atmosphere reaches the pixel electrode, and its volume decreases. When a highly volatile solvent is used, a certain amount of solvent is volatilized when it reaches the pixel electrode, and the subsequent baking time can be shortened.
[0024]
Further, if a solvent having a high boiling point is used without using a highly volatile solvent, it is possible to eliminate anxiety such as clogging of the nozzle tip due to drying of the droplet ejection port. At that time, if the pixel electrode is heated (room temperature (typically 20 ° C.) to 300 ° C., more preferably 50 to 200 ° C. is preferable considering the heat resistance of the light emitter), the liquid is applied to the pixel electrode. Volatilization is started as the droplets arrive, and the firing process can be completed at the same time as the droplets are ejected to other pixels. Of course, the film quality can be further improved by allowing the solvent to volatilize from the droplets until the droplets reach the pixel electrode by the above method and further heating the pixel electrode.
[0025]
As the solvent having a high boiling point, NMP (N-methylpyrrolidone), DMF (dimethylformamide), DMSO (dimethylsulfoxide), HMPA (hexamethylphosphoamide) and other polar solvents can be used. In addition, an aromatic solvent such as an alkylbenzene such as xylene (especially, a long-chain alkylbenzene such as dodecylbenzene is preferable) may be used even in a low polarity solvent. For example, a solvent in which tetralin and dodecylbenzene are mixed at 1: 1 can be used.
[0026]
Moreover, alcohols, such as methanol and ethanol, are mentioned as a highly volatile solvent.
[0027]
In the present invention, the light emitter is a carrier injection layer (a hole injection layer or an electron injection layer), a carrier transport layer (a hole transport layer or an electron transport layer), a carrier blocking layer (a hole blocking layer or an electron). Blocking layer), light emitting layer, and other organic or inorganic compounds that contribute to carrier recombination, or a laminate thereof. Moreover, a light-emitting body composition means the composition used as the material of these light-emitting bodies, and it does not ask | require whether it is an organic compound and an inorganic compound. The luminous body composition is roughly classified into a luminous material and a carrier (hole or electron) transporting material.
[0028]
A light-emitting material is a material that generates a light-emitting phenomenon due to electroluminescence by injecting holes and electrons. Such a luminescent material can be found in both inorganic compounds and organic compounds, but in the method of applying a solution as in the present invention, it is preferable to use an organic compound. As the light-emitting material, a material that emits fluorescence by singlet excitation or a material that emits phosphorescence by triplet excitation may be used. In addition, the hole transporting material is a material that easily moves holes, and the electron transporting material is a material that easily moves electrons.
[0029]
The configuration 1 of the invention disclosed in this specification is:
After spraying the solution containing the first organic compound under reduced pressure toward the anode provided on the substrate, the substrate is spun under reduced pressure to form a layer made of a conductive polymer on the anode,
Spraying a solution containing the second organic compound under reduced pressure toward the anode, depositing the phosphor composition layer on the layer made of the conductive polymer, and then performing heat treatment under reduced pressure. This is a feature of a method for manufacturing a light-emitting device.
[0030]
In addition, the substrate may be spun under atmospheric pressure.
After spraying the solution containing the first organic compound under reduced pressure toward the anode provided on the substrate, the substrate is spun under atmospheric pressure to form a layer made of a conductive polymer on the anode,
Spraying a solution containing the second organic compound under reduced pressure toward the anode, depositing the phosphor composition layer on the layer made of the conductive polymer, and then performing heat treatment under reduced pressure. This is a feature of a method for manufacturing a light-emitting device.
[0031]
Further, the solution containing the first organic compound may be sprayed under atmospheric pressure, and the configuration 3 of the other invention is as follows.
After spraying the solution containing the first organic compound under atmospheric pressure toward the anode provided on the substrate, the substrate is spun under reduced pressure to form a layer made of a conductive polymer on the anode,
Spraying a solution containing the second organic compound under reduced pressure toward the anode, depositing the phosphor composition layer on the layer made of the conductive polymer, and then performing heat treatment under reduced pressure. This is a feature of a method for manufacturing a light-emitting device.
[0032]
Alternatively, the solution containing the first organic compound may be sprayed under atmospheric pressure, and the substrate may be spun under atmospheric pressure.
After spraying a solution containing the first organic compound under atmospheric pressure toward the anode provided on the substrate, the substrate is spun under atmospheric pressure to form a layer made of a conductive polymer on the anode. ,
Spraying a solution containing the second organic compound under reduced pressure toward the anode, depositing the phosphor composition layer on the layer made of the conductive polymer, and then performing heat treatment under reduced pressure. This is a feature of a method for manufacturing a light-emitting device.
[0033]
Moreover, the process sequence of the heat treatment may be changed under reduced pressure in the above configuration 1, and the configuration 5 of the other invention is as follows.
After spraying the solution containing the first organic compound under reduced pressure toward the anode provided on the substrate, the substrate is spun under reduced pressure to form a layer made of a conductive polymer on the anode,
After performing the heat treatment under reduced pressure, a solution containing the second organic compound is sprayed toward the anode under reduced pressure to deposit a phosphor composition layer on the layer made of the conductive polymer. This is a feature of a method for manufacturing a light-emitting device.
[0034]
Moreover, the process sequence of the heat treatment may be changed under reduced pressure in the above configuration 2, and the configuration 6 of the other invention is as follows.
After spraying the solution containing the first organic compound under reduced pressure toward the anode provided on the substrate, the substrate is spun under atmospheric pressure to form a layer made of a conductive polymer on the anode,
After performing the heat treatment under reduced pressure, a solution containing the second organic compound is sprayed toward the anode under reduced pressure to deposit a phosphor composition layer on the layer made of the conductive polymer. This is a feature of a method for manufacturing a light-emitting device.
[0035]
Moreover, the process sequence of the heat treatment may be changed under reduced pressure in the configuration 3, and the configuration 7 of the other invention is
After spraying the solution containing the first organic compound under atmospheric pressure toward the anode provided on the substrate, the substrate is spun under reduced pressure to form a layer made of a conductive polymer on the anode,
After performing the heat treatment under reduced pressure, a solution containing the second organic compound is sprayed toward the anode under reduced pressure to deposit a phosphor composition layer on the layer made of the conductive polymer. This is a feature of a method for manufacturing a light-emitting device.
[0036]
Moreover, the process sequence of the heat treatment may be changed under reduced pressure in the above configuration 4, and the configuration 8 of the other invention is as follows.
After spraying a solution containing the first organic compound under atmospheric pressure toward the anode provided on the substrate, the substrate is spun under atmospheric pressure to form a layer made of a conductive polymer on the anode. ,
After performing the heat treatment under reduced pressure, a solution containing the second organic compound is sprayed toward the anode under reduced pressure to deposit a phosphor composition layer on the layer made of the conductive polymer. This is a feature of a method for manufacturing a light-emitting device.
[0037]
In each of the above structures, the substrate is heated to room temperature (typically 20 ° C.) to 200 ° C. when the solution containing the first organic compound is sprayed. Moreover, when injecting the solution containing the second organic compound, the substrate may be heated to room temperature (typically 20 ° C.) to 200 ° C.
[0038]
In each of the above structures, a cathode is formed on the phosphor composition layer after the phosphor composition layer is formed.
[0039]
Moreover, in each said structure, the said solution is injected from several nozzles, It is characterized by the above-mentioned.
[0040]
In each of the above structures, the phosphor composition layer is a light-emitting material, a hole-transporting material, or an electron-transporting material.
[0041]
In each of the above structures, the phosphor composition layer is a layer selected from a light emitting layer, a hole injection layer, a hole transport layer, a hole blocking layer, an electron injection layer, an electron transport layer, or an electron blocking layer. It is characterized by being a functional thin film or a laminated thin film thereof.
[0042]
In each of the above structures, the end of the anode is covered with a partition made of an insulating material.
[0043]
In each of the above structures, when the solution is sprayed under reduced pressure, the substrate is installed such that the substrate surface is perpendicular to the direction of gravity, and the nozzle is installed above the substrate. Alternatively, when the solution is sprayed under reduced pressure, the substrate is installed such that the substrate surface is perpendicular to the direction of gravity, and the nozzle is installed below the substrate.
[0044]
Moreover, in each said structure, the said light-emitting body composition is deposited intermittently. Alternatively, the phosphor composition is continuously deposited.
[0045]
In addition, a layer made of a conductive polymer is applied over the entire surface by a spin coating method instead of the ink jet method, and a solution containing the light emitter composition is sprayed and deposited under reduced pressure by the ink jet method thereon to deposit the light emitter. It may be configured. However, in this case, since the entire surface is applied by the spin coating method, the regions such as the terminal portions that do not require film formation are O ₂ It must be selectively removed by ashing or the like.
[0046]
In the present invention, film formation by a spin coating method and film formation by an ink-jet method under reduced pressure can be combined as appropriate. For example, after film formation by an inkjet method under reduced pressure is performed on the anode, the entire surface may be applied by a spin coating method, and further, film formation by an inkjet method under reduced pressure may be performed.
[0047]
The film forming apparatus disclosed in the present invention has the following characteristics. An example of the film forming apparatus of the present invention is shown in FIG.
[0048]
A film forming apparatus including a head portion having a plurality of nozzles and piezoelectric elements,
Means for depressurizing the deposition chamber;
A container storing liquid;
A supply pipe for supplying the liquid from the container to the nozzle of the head unit;
Means for adjusting the pressure in the film forming chamber and the pressure in the container;
In this film forming apparatus, a plurality of supply pipes are provided for one nozzle.
[0049]
Further, in the above configuration, the head unit is a film forming apparatus characterized by having a backflow prevention mechanism.
[0050]
Also, different containers may be prepared for each nozzle, and different amounts of liquid may be ejected.
A film forming apparatus including a head portion having a plurality of nozzles and piezoelectric elements,
Means for depressurizing the deposition chamber;
Multiple containers storing different liquids;
A supply pipe for supplying the liquid from the plurality of containers to the nozzles of the head unit;
Means for adjusting the pressure in the film forming chamber and the pressure in the container;
In this film forming apparatus, a plurality of supply pipes are provided for one nozzle.
[0051]
The head portion refers to the entire ink head portion including a piezoelectric element, a nozzle (including a nozzle plate), a supply pipe, a backflow prevention mechanism, a support and the like.
[0052]
Note that the present invention can be manufactured for both a passive matrix light-emitting device and an active matrix light-emitting device, and is not particularly limited to the form of the light-emitting device. In addition, the present invention can be applied to an area color light emitting device which is a surface light source or an electrical decoration device. In addition, the light-emitting material is not limited to an organic compound and can be implemented for an inorganic compound.
[0053]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
[0054]
(Embodiment 1)
An embodiment of the present invention will be described with reference to FIG. FIG. 1A shows a state immediately after a solution containing an organic compound is jetted, and FIG. 1B shows a thin film (organic compound layer) formed when organic compound droplets reach the anode or cathode. It represents the state that was done.
[0055]
In FIG. 1A, reference numeral 101 denotes an anode or a cathode, and reference numeral 102 denotes a partition made of an insulator that defines each pixel. Reference numeral 104 denotes an enlarged head portion of an apparatus for applying a solution (hereinafter referred to as a solution applying apparatus), and a part thereof shows an internal structure. As shown in FIG. 1A, two passages (supply pipes) for the solution 107 are provided for one nozzle so that the jetted liquid droplets are not bent. Even if the supply line on one side is clogged, it can be covered with the supply pipe on the other side. Two supply pipes connected to one nozzle may be connected to different supply containers.
[0056]
In addition, as shown in FIG. 1A, a backflow prevention mechanism 110 using a ball 111 is provided. The cross section A is provided with a protrusion that regulates the amount of movement of the ball so that ink flows along the side of the ball. Further, the ball has a diameter slightly smaller than the diameter of the supply pipe, and can move freely within a certain range. The ball also plays a role of alleviating steep ink flow. Further, the supply pipe is narrowed in the middle, and the cross section B is smaller than the diameter of the ball, and the ball completely blocks the supply pipe when the ink flows backward. The head unit 104 includes a plurality of ejecting units 105 having a function of ejecting a solution containing an organic compound, and a piezoelectric element (piezo element) 106 is provided for each. The piezoelectric element is provided so as to close the supply pipe, and a slight gap is formed between the inner wall of the pipe and the ink is allowed to pass through the gap. Since the inside of the film forming chamber is depressurized, even a slight gap can be jetted vigorously. In addition, each of the injection units 105 is filled with a solution 107 containing an organic compound. FIG. 1A shows a state in which the shutter is closed by the vibration of the piezoelectric element.
[0057]
Although only five injection units are described in FIG. 1A, it is possible to arrange a plurality of injection units (nozzles) in parallel, and in consideration of throughput, one row or one column of pixel portions. It can be said that it is most desirable to arrange the number corresponding to the number of pixels (number of pixels).
[0058]
In addition, the space 108 between the head unit 104 and the anode or cathode 101 is maintained at a reduced pressure, that is, a pressure lower than the atmospheric pressure. Specifically, 1 × 10 in an inert atmosphere ² ~ 2x10 ^Four Pa (preferably 5 × 10 ² ~ 5x10 ^Three Pa). A solution 107 containing an organic compound filled in the injection unit 105 is drawn from the nozzle by opening and closing the supply pipe by the piezoelectric element 106 and reducing the pressure in the film formation chamber, and is injected toward the pixel electrode 101. Then, the ejected droplet 109 proceeds while the solvent is volatilized under reduced pressure, and the remaining organic compound is deposited on the pixel electrode 101. Then, droplets are sequentially ejected from the ejection unit (nozzle) at a predetermined timing. As a result, the organic compound is deposited intermittently.
[0059]
Here, an example in which the solution 107 containing an organic compound is a solution containing a conductive polymer material is shown. Thus, an organic compound layer made of a conductive polymer material is formed over the pixel electrode 101 as shown in FIG. In FIG. 1B, a carrier injection layer 103a which is an organic compound layer formed over the pixel electrode 101 is a hole injection layer if 101 is an anode, and an electron injection layer if 101 is a cathode. .
[0060]
Next, as shown in FIG. 1C, the substrate is spin-rotated under atmospheric pressure or reduced pressure to make the film thickness uniform. Here, the spin rotation is performed at a low speed so that the liquid or gel solution does not get over the partition wall. An organic compound layer 103b having a uniform film thickness is obtained on the pixel electrode as the side surface of the partition wall becomes thinner toward the top. When there is a lot of excess solution, it is preferable to rotate it at a high speed and blow it away.
[0061]
In addition to the advantages of the inkjet method, which is a low-cost and simple technique, has a high throughput, and high material utilization efficiency, this spin process makes it possible to obtain a uniform film thickness.
[0062]
If necessary, after the spinning step, heating may be performed under reduced pressure to perform degassing treatment and firing.
[0063]
Next, as shown in FIG. 2A, solutions each containing a light-emitting material are injected. 2A, the head portion 114 has a plurality of ejecting portions 115a to 115c having a function of ejecting a solution containing a luminescent material, and piezoelectric elements (piezo elements) 116a to 116c are provided respectively. It is done. Further, two supply pipes connected to one nozzle may be connected to different supply containers, and different amounts of solution can be ejected for each nozzle. For example, the film thickness can be changed by increasing the number of solutions containing a luminescent material that emits green light compared to solutions containing a luminescent material that emits red light. The optimum film thickness is often different depending on the luminescent material corresponding to each luminescent color and the laminated structure thereof, and is effective in such a case. Further, by adjusting the internal pressure of each supply container, a different amount of solution can be ejected for each nozzle. Moreover, each of the injection parts 115a-115c is filled with the solution 117a-117c containing a luminescent material. Note that FIG. 2A shows a state in which the shutter is opened by the vibration of the piezoelectric element.
[0064]
Here, the solution 117a containing a light emitting material contains a light emitting material that emits red light, the solution 117b containing a light emitting material contains a light emitting material that emits green light, and the solution 117c containing a light emitting material is blue. A luminescent material that emits light. These three kinds of luminescent materials constitute a pixel emitting red light, a pixel emitting green light, and a pixel emitting blue light, and these three pixels are regarded as one pixel unit (pixel unit).
[0065]
In FIG. 2 (A), only R (red), G (green), and B (blue) each corresponding to one injection unit is described, but a plurality of injection units (nozzles) are arranged in parallel. In consideration of throughput, it can be said that it is most desirable to arrange the pixels corresponding to the number of pixels (pixel number) corresponding to one row or one column of the pixel portion.
[0066]
The solutions 117 a to 117 c containing the luminescent material filled in the ejection units 115 a to 115 c are drawn out from the nozzles by opening and closing the supply pipes by the piezoelectric elements 116 a to 116 c and reducing the pressure in the film formation chamber. It is jetted toward. Then, the ejected droplet 119 proceeds while volatilizing the solvent under reduced pressure, and the remaining light-emitting material is deposited on the pixel electrode 101. As a result, the luminescent material is deposited intermittently.
[0067]
The thin film deposited in this way is thinned with the solvent components removed sufficiently without volatilizing the solvent by means such as heating, so that a light emitting layer with less problems such as deterioration over time due to degassing can be obtained. It is done. Even after the solution is applied with the above-described configuration, a baking step or the like is not required, and the throughput can be greatly improved, and deterioration of the luminescent material itself due to heating can be prevented.
[0068]
Thus, as shown in FIG. 2B, a light emitting layer 120a that emits red light, a light emitting layer 120b that emits green light, and a light emitting layer 120c that emits blue light are formed.
[0069]
If necessary, after the formation of the light emitting layer, heating may be performed under reduced pressure to perform degassing treatment and firing.
[0070]
Thereafter, a carrier transport layer, a carrier injection layer, and the like are formed as necessary, and then a counter electrode (a cathode for an anode and an anode for a cathode) is provided to complete a light emitting element.
[0071]
(Embodiment 2)
An embodiment of the present invention will be described with reference to FIG. Although Embodiment 1 shows an example in which a layer made of a conductive polymer is formed under reduced pressure, an example in which the layer 123 made of a conductive polymer is formed under atmospheric pressure is shown here. Note that the solution coating apparatus in FIG. 3A is the same as that described with reference to FIG. 1, and the description of the first embodiment is referred to for the same reference numerals as those used in FIG. It ’s fine.
[0072]
In FIG. 3A, a space 128 between the head portion 104 and the anode or cathode 101 is maintained at atmospheric pressure. The ejected droplet 129 is dropped as it is, and an organic compound is deposited on the pixel electrode 101. Note that ink jetting at atmospheric pressure is suitable when a solution that easily volatilizes is used.
[0073]
Thus, an organic compound layer made of a conductive polymer material is formed over the pixel electrode 101 as shown in FIG. In FIG. 3B, a carrier injection layer 123a which is an organic compound layer formed over the pixel electrode 101 is a hole injection layer if 101 is an anode, and an electron injection layer if 101 is a cathode. .
[0074]
Next, as shown in FIG. 3C, the substrate is spin-rotated under atmospheric pressure or reduced pressure to make the film thickness uniform. Here, the spin rotation is performed at a low speed so that the liquid or gel solution does not get over the partition wall. An organic compound layer 123b having a uniform film thickness is obtained on the pixel electrode, and the side surface of the partition wall becomes thinner toward the top.
[0075]
In addition to the advantages of the inkjet method, which is a low-cost and simple technique, has a high throughput, and high material utilization efficiency, this spin process makes it possible to obtain a uniform film thickness.
[0076]
If necessary, after the spinning step, heating may be performed under reduced pressure to perform degassing treatment and firing.
[0077]
In the subsequent steps, a light emitting layer is formed in accordance with Embodiment 1, a carrier transport layer, a carrier injection layer, etc. are formed as necessary, and then a counter electrode (a cathode for the anode, an anode for the cathode) ) Is completed.
[0078]
Further, this embodiment mode can be freely combined with Embodiment Mode 1.
[0079]
(Embodiment 3)
An embodiment of the present invention will be described with reference to FIG. FIG. 4A shows a state where there is a lot of excess solution when the organic compound layer 130a is formed by the inkjet method.
[0080]
Next, the substrate is rotated at high speed and blown away to obtain the state of FIG. An organic compound layer 130b is formed covering the partition wall. In the case of functioning as a carrier injection layer common to each pixel, it can be considered that there is no problem even if it is formed on the partition wall in this way. Depending on the material of the organic compound layer, when firing is performed thereafter, the organic compound layer 130b at the upper part of the partition wall is further thinned to obtain a state in which it hardly exists.
[0081]
In the subsequent steps, a light emitting layer is formed in accordance with Embodiment 1, a carrier transport layer, a carrier injection layer, etc. are formed as necessary, and then a counter electrode (a cathode for the anode, an anode for the cathode) ) Is completed.
[0082]
FIG. 4C shows an enlarged schematic view after formation of the light-emitting element obtained by the above embodiment mode. Here, a structure is shown in which the pixel electrode is an anode, a hole injection layer is applied by an ink jet method, spin-rotated, and an organic thin film and a cathode are sequentially formed.
[0083]
Further, this embodiment mode can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.
[0084]
(Embodiment 4)
As the light emitters shown in Embodiments 1 to 3, a light emitting layer, a hole injection layer, a hole transport layer, a hole blocking layer, an electron injection layer, an electron transport layer or an electron blocking layer, or a laminate thereof is used. Although these are mentioned, these may be comprised only with an organic compound, and the composite_body | complex (composite) which laminated | stacked the organic compound and the inorganic compound may be sufficient as it.
[0085]
Therefore, in this embodiment, an example in which a composite in which an organic compound and an inorganic compound are combined is used as a light emitter of the light emitting device of the present invention will be described. In addition, as a patent characterized by a hybrid structure in which an organic compound and an inorganic compound are laminated, there is US Pat. No. 5,895,932, which describes ultraviolet light (wavelength 380 nm) emitted from a diode made of an inorganic compound. ) Is an organic compound Alq _Three (Tris-8-quinolinolato aluminum complex) is a technique for extracting light generated by a phenomenon called photoluminescence, which is fundamentally different from the light emitter described in this embodiment, that is, a composite. It is a technical idea.
[0086]
Among organic compounds, a high molecular weight organic compound (hereinafter referred to as an organic polymer) has high heat resistance and is easy to handle, so that it is used as a solute in a film forming method by solution coating. In this embodiment, an example in which a composite of an organic polymer and an inorganic compound is used as a light emitter will be described.
[0087]
As an example of laminating an organic polymer and an inorganic compound to form a light emitter, there are typically the following four patterns.
(A) A combination of a hole injection layer (or hole transport layer) made of an inorganic compound and a light emitting layer made of an organic polymer
(B) A combination of an electron injection layer (or electron transport layer) made of an inorganic compound and a light emitting layer made of an organic polymer.
(C) A combination of a light emitting layer made of an inorganic compound and a hole injection layer (or hole transport layer) made of an organic polymer
(D) A combination of a light-emitting layer made of an inorganic compound and an electron injection layer (or electron transport layer) made of an organic polymer
[0088]
Moreover, as an example of forming a light emitter by mixing an organic polymer and an inorganic compound, there are typically the following three patterns.
(E) A combination in which an organic polymer having carrier transporting properties is used as a light emitting layer, and an inorganic compound is mixed in the organic polymer.
(F) Combination in which an organic polymer having the same polarity (n-type or p-type) carrier transportability and an inorganic compound are mixed as a light emitting layer
(G) A combination of an organic polymer having carrier transportability mixed with an inorganic compound having carrier acceptability
[0089]
Examples of the configuration (g) include a combination of an organic polymer having a hole transporting property and an inorganic compound having an electron accepting property. In this case, the inorganic compound having an electron-accepting property has a configuration in which electrons are received from the organic polymer, and as a result, holes are generated in the organic polymer, and the holes are transported to obtain transportability.
[0090]
In the structures (a) to (g), a p-type semiconductor material such as NiO (nickel oxide) can be used as a hole injection layer or a hole transport layer made of an inorganic compound, and an electron made of an inorganic compound. As the injection layer or the electron transport layer, ZnO (zinc oxide), TiO ₂ An n-type semiconductor material such as (titanium dioxide) can be used, and ZnS (zinc sulfide), CdS (cadmium sulfide), or the like can be used as the light-emitting layer made of an inorganic compound.
[0091]
For example, as an example of the configuration of the above (b), an example in which PPV (polyparaphenylene vinylene) is used as an organic polymer, CdS is used as an inorganic compound, and these are prepared by solution coating. In this case, when forming CdS, it is possible to apply CdS nano-particles (fine particles of several nm to several tens of nm; the same applies hereinafter) dispersed in a solvent. What is necessary is just to implement a process. In addition, instead of CdS, ZnO, TiO ₂ An n-type semiconductor material such as NiO or a p-type semiconductor material such as NiO may be used.
[0092]
Moreover, as an example of the structure of said (e), the example which uses PVK (polyvinylcarbazole) as an organic polymer, uses CdS as an inorganic compound, and produces these by solution coating is mentioned. In this case, CdS emits light with the light emission center. When CdS is formed, CdS fine particles can be dispersed and applied in a solvent, and the coating process of the present invention may be performed in this coating process. An inorganic compound such as ZnS can be used instead of CdS. Since these CdS and ZnS are inorganic compounds that can easily form nanoparticles, they are very suitable materials when solution coating is used as in the present invention.
[0093]
In addition, as an example of the configuration of (g), PC (polycarbonate) is used as an organic polymer, and TPD (triphenyldiamine), which is a hole-transporting inorganic compound, and Ti alkoxide are mixed with this PC. After coating, hydrolysis by PC and TPD and TiO by heating under reduced pressure ₂ An example of forming a light emitter in which is mixed. In this case, when CdS is formed, the fine particles of CdS can be dispersed and applied in a solvent, and the coating process of the present invention may be performed in this coating process.
[0094]
As described above, a composite phosphor can be manufactured by using various organic compounds and inorganic compounds, and the manufacturing method of the present invention can be carried out during the formation. It is.
[0095]
Further, this embodiment mode can be freely combined with any one of Embodiment Modes 1 to 3.
[0096]
(Embodiment 5)
In this embodiment, a technique for filling the phosphor composition without exposing it to the atmosphere when the head portion is filled with the solution containing the phosphor composition described in Embodiment 1 will be described.
[0097]
FIG. 15 is a cross-sectional view of a container (canister can) for mounting (stocking) a solution containing a phosphor composition on a solution coating apparatus. The container 351 is preferably formed of a material having sufficient confidentiality, particularly sufficient resistance to permeation of oxygen and moisture, and stainless steel, aluminum, or the like may be used. The inner surface is preferably mirror-finished. Furthermore, a silicon nitride film, a diamond-like carbon film, or other insulating film having a low oxygen permeability may be provided on the inner surface and / or the outer surface as necessary. This is for preventing deterioration of the solution 352 containing the phosphor composition provided inside the container 351.
[0098]
Reference numeral 353 denotes an inlet for introducing nitrogen, a rare gas, or other inert gas into the container 351, from which an inert gas is introduced to increase the internal pressure of the container. Reference numeral 354 denotes a lead-out port for sending the solution 352 containing the phosphor composition delivered by pressurization to the head portion of a solution coating apparatus (not shown). The inlet 353 and the outlet 354 may be formed of a material different from that of the container 351 or may be integrally formed.
[0099]
Although an example of pressurization is shown here, if a pressure difference is generated between the container internal pressure and the film formation chamber pressure, the container internal pressure may be reduced, for example, a vacuum lower than the degree of vacuum in the film formation chamber. Just do it.
[0100]
Note that reference numeral 356 denotes an introduction pipe connected to the introduction port 353. When an inert gas is actually introduced, the distal end of the introduction pipe 356 is connected to the introduction port 353 to introduce the inert gas. Similarly, the tip of the outlet tube 357 is connected to the outlet 354 to lead out the solution 352 containing the phosphor composition. In the figure, since it is removable, it is represented by a dotted line.
[0101]
Each head portion shown in the first embodiment is attached to the extended tip of the outlet tube 357. In the case of Embodiment 1, the solution 352 containing the phosphor composition can be ejected intermittently by vibrating the piezoelectric element 106 in a state where the inside of the container 351 is pressurized with an inert gas. Further, it can be continuously applied while the inside of the container 351 is pressurized with an inert gas, and when the pressurization is stopped, the ejection of the solution 352 containing the phosphor composition is stopped.
[0102]
Further, the present embodiment is characterized in that the solution 352 containing the phosphor composition is always transported in a state of being cut off from the atmosphere after being put into the container 351 and attached to the solution coating apparatus. That is, a manufacturer that manufactures the solution 352 containing the phosphor composition puts the solution 352 containing the phosphor composition into the container 351 and transports it without opening to the atmosphere while maintaining airtightness, and directly into the solution coating apparatus. It can be attached. This is a device made in view of the fact that the phosphor composition is weak in resistance to oxygen and moisture and easily deteriorates, and after purifying the phosphor composition, it maintains the purity as it is purified until it is applied. Therefore, it contributes to the suppression of deterioration of the phosphor composition, and thus to the improvement of the reliability of the light emitting device.
[0103]
Note that the container shown in FIG. 15 in this embodiment is an example suitable for transporting while maintaining the purity of the solution containing the phosphor composition, and limits the containers that can be used in the present invention. is not.
[0104]
Further, this embodiment can be freely combined with any one of Embodiments 1 to 4.
[0105]
(Embodiment 6)
The structure of this embodiment will be described with reference to FIGS. 16A is a top view illustrating the heating method in this embodiment, FIG. 16B is a cross-sectional view taken along the line AA ′, and FIG. 16C is the line BB. FIG.
[0106]
In FIG. 16A, reference numeral 601 denotes a substrate over which a thin film transistor, a pixel electrode, and the like are provided. The substrate 601 is fixed by a substrate stage (not shown).
[0107]
In addition, the head portion 603 of the solution coating apparatus moves above the surface side of the substrate 601 to apply the solution containing the phosphor composition. The substrate 601 is relatively scanned by the movement of the head portion 603. In order to prevent clogging of the head part 603, the head part is immersed in a container 605 containing a solvent, and before scanning, the liquid is discharged to some extent on the test run table 607 to stabilize the droplet size. When stable droplets can be obtained, the coating is performed by moving the head portion above the substrate.
[0108]
Needless to say, the head portion 603 can be fixed and the substrate 601 can be moved for scanning. The applied phosphor composition 604 becomes a phosphor 606 after the solvent is volatilized (baked).
[0109]
Here, an example in which the entire surface application is completed by one scan of the head unit 603 is shown here, but the head unit 603 may be reciprocated several times to perform multiple coatings.
[0110]
Here, an example in which the container 605 containing the solvent and the test run table 607 are separated is shown, but only the container 605 containing the solvent may be discharged into the container 605 until the droplet is stabilized.
[0111]
Further, this embodiment mode can be freely combined with any one of Embodiment Modes 1 to 5.
[0112]
The present invention having the above-described configuration will be described in more detail with the following examples.
[0113]
(Example)
[Example 1]
In this example, examples of various process orders based on Embodiment Mode 1 are shown in FIG.
[0114]
First, a substrate provided with an anode whose end is covered with a partition made of an insulator is prepared.
[0115]
As the anode, a metal film having a high work function (Cr, Pt, W, etc.), a transparent conductive film (ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O _Three -ZnO), zinc oxide (ZnO), or the like.
[0116]
At both ends of the anode, partition walls (called banks, barriers, banks, etc.) are formed so as to surround the periphery of the anode. In order to improve the coverage, a curved surface having a curvature is formed at the upper end or the lower end of the partition wall. For example, when positive photosensitive acrylic is used as the partition wall material, it is preferable that only the upper end portion of the partition wall has a curved surface having a curvature radius (0.2 μm to 3 μm). As the partition wall, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used.
[0117]
In the case of manufacturing an active matrix light-emitting device, a switching element is formed below the anode. In this embodiment, a silicon oxynitride film (film thickness: 100 nm) serving as a base insulating film is formed on a glass substrate by a PCVD method, and an amorphous silicon film (film thickness: 54 nm) is stacked without being exposed to the air. Then, after forming a polysilicon film using a known technique (solid phase growth method, laser crystallization method, crystallization method using a catalytic metal, etc.), patterning is performed to form an island-shaped semiconductor region, A top gate type TFT using this as an active layer is fabricated. Then, a gate insulating film is formed, a gate electrode is formed, a source region or a drain region is formed by doping the active layer, an interlayer insulating film is formed, a source electrode or a drain electrode is formed, an activation process, or the like is performed. In this embodiment, an anode in contact with the source electrode or drain electrode of the TFT thus obtained is formed. In addition to the TFT, a photoelectric conversion element made of a thin film diode, a silicon PIN junction, a silicon resistance element, or a sensor element (typically a pressure sensitive fingerprint sensor using polysilicon) may be formed on the same substrate. it can.
[0118]
Further, not only polysilicon but also an active matrix light emitting device may be manufactured using a bottom gate type TFT using amorphous silicon.
[0119]
If necessary, the surface of the anode is washed or O ₂ A clean surface may be obtained by plasma treatment, or a porous sponge (typically made of PVA (polyvinyl alcohol), nylon) contains a surfactant (weakly alkaline), and the anode surface is rubbed and washed. Also good.
[0120]
Next, immediately before forming a layer containing an organic compound, heating under reduced pressure is performed to remove adsorbed moisture on the entire substrate provided with TFTs and partition walls. Furthermore, ultraviolet irradiation may be performed on the anode immediately before forming the layer containing an organic compound.
[0121]
Next, as shown in the flow of FIG. 5A, after the first material layer is formed by an inkjet method under reduced pressure, and the film thickness of the first material layer is made uniform by spin rotation under reduced pressure. Then, a second material layer is formed by an ink-jet method under reduced pressure, and baking is performed by heating under reduced pressure. Finally, an electrode to be a cathode is formed by vapor deposition or sputtering. In this example, a polyethylene dioxythiophene / polystyrene sulfonic acid (PEDT / PSS) aqueous solution, which is a conductive polymer to which an acceptor is added, is used as a first material layer on an anode surrounded by a partition wall by an inkjet device under reduced pressure. Spray to form a layer. As the second material layer, cyanopolyphenylene vinylene is used for the red light emitting material, polyphenylene vinylene is used for the green light emitting material, and polyphenylene vinylene and polyalkylphenylene are used for the blue light emitting material.
[0122]
As the cathode, a material having a small work function (Al, Ag, Li, Ca, or an alloy thereof MgAg, MgIn, AlLi, CaF) ₂ Or a single layer of CaN) or a laminate of these thin films (film thickness that transmits light) and a transparent conductive film may be used. In addition, the electrode to be the cathode may be formed under reduced pressure, and contamination of impurities can be prevented by consistently forming up to the cathode under reduced pressure.
[0123]
Further, if necessary, a protective layer formed by sputtering or vapor deposition may be formed so as to cover the cathode. As a protective layer, a silicon nitride film, a silicon oxide film, a silicon oxynitride film (SiNO film (composition ratio N> O) or SiON film (composition ratio N <O)) obtained by sputtering or CVD, and carbon as a main component A thin film (for example, a DLC film or a CN film) can be used.
[0124]
FIG. 5B illustrates a flow in which the process order is partly different from that in FIG.
[0125]
As shown in the flow of FIG. 5B, the first material layer is formed by an ink jet method under reduced pressure, and the film thickness of the first material layer is made uniform by rotating the spin under reduced pressure. Baking is performed by heating under, and then a second material layer is formed by an inkjet method under reduced pressure. Finally, an electrode to be a cathode is formed by vapor deposition or sputtering. In FIG. 5B, since the layers are stacked after heating under reduced pressure, a clear boundary is formed between the first material layer and the second material layer.
[0126]
FIG. 5C illustrates a flow in which the process is partly different from that in FIG.
[0127]
As shown in the flow of FIG. 5C, after the first material layer is formed by an ink jet method under reduced pressure and the film thickness of the first material layer is made uniform by spin rotation under atmospheric pressure, A second material layer is formed by an ink-jet method under reduced pressure, and baking is performed by heating under reduced pressure. Finally, an electrode to be a cathode is formed by vapor deposition or sputtering.
[0128]
FIG. 5D illustrates a flow in which the process order is partly different from that in FIG.
[0129]
As shown in the flow of FIG. 5D, after the first material layer is formed by an ink-jet method under reduced pressure and the film thickness of the first material layer is uniformed by spin rotation under atmospheric pressure, Firing is performed by heating under reduced pressure, and then a second material layer is formed by an inkjet method under reduced pressure. Finally, an electrode to be a cathode is formed by vapor deposition or sputtering.
[0130]
In addition, this embodiment can be freely combined with any one of Embodiment Modes 1 to 6.
[0131]
[Example 2]
In this example, examples of various process orders based on Embodiment Mode 2 are shown in FIG.
[0132]
First, as in Example 1, a substrate provided with an anode whose end is covered with a partition made of an insulator is prepared.
[0133]
Next, as shown in the flow of FIG. 6A, the first material layer is formed by an inkjet method under atmospheric pressure, and the film thickness of the first material layer is made uniform by spin rotation under reduced pressure. After that, a second material layer is formed by an ink jet method under reduced pressure, and baking is performed by heating under reduced pressure. Finally, an electrode to be a cathode is formed by vapor deposition or sputtering.
[0134]
FIG. 6B illustrates a flow in which the process order is partly different from that in FIG.
[0135]
As shown in the flow of FIG. 6B, after the first material layer is formed by an inkjet method under atmospheric pressure and spin-rotated under reduced pressure, the thickness of the first material layer is made uniform, Baking is performed by heating under reduced pressure, and then a second material layer is formed by an inkjet method under reduced pressure. Finally, an electrode to be a cathode is formed by vapor deposition or sputtering. In FIG. 6B, since the layers are stacked after heating under reduced pressure, a clear boundary is formed between the first material layer and the second material layer.
[0136]
FIG. 6C illustrates a flow in which the process is partly different from that in FIG.
[0137]
As shown in the flow of FIG. 6C, after the first material layer is formed by an inkjet method under atmospheric pressure and spin-rotated under atmospheric pressure, the thickness of the first material layer is made uniform A second material layer is formed by an ink jet method under reduced pressure, and is fired by heating under reduced pressure. Finally, an electrode to be a cathode is formed by vapor deposition or sputtering.
[0138]
FIG. 6D illustrates a flow in which the process order is partly different from that in FIG.
[0139]
As shown in the flow of FIG. 6D, after the first material layer is formed by an inkjet method under atmospheric pressure, and the film thickness of the first material layer is made uniform by spin rotation under atmospheric pressure. Then, baking is performed by heating under reduced pressure, and then a second material layer is formed by an inkjet method under reduced pressure. Finally, an electrode to be a cathode is formed by vapor deposition or sputtering.
[0140]
In addition, this embodiment can be freely combined with any one of Embodiment Modes 1 to 6 and Embodiment 1.
[0141]
[Example 3]
In this embodiment, FIG. 7 shows an example in which a solution coating apparatus used for carrying out the present invention is combined with an in-line manufacturing apparatus that performs processes from the formation of a light emitter to the formation of a cathode. 7A is a side view and FIG. 7B is a top view.
[0142]
7A and 7B, 141 is a load chamber for carrying in a substrate, 148 is an unload chamber for carrying out a substrate, 143 is a film forming chamber for depositing PTF, and 142 is a film thickness. A uniform spin chamber, 145 is a film formation chamber for forming a light emitting layer, 146 is a substrate inversion chamber for inverting the substrate surface, and 147 is a film formation chamber for forming a metal film to be a cathode. An arrow 150 in the figure is the transport direction of the substrate 140.
[0143]
The film formation chambers 143 and 145 are solution coating apparatuses provided with an ink jet apparatus, and head portions 143a and 145a are provided therein. Application of a solution containing an organic compound or an inorganic compound and formation of a thin film are performed under reduced pressure or atmospheric pressure. Needless to say, a mechanism for heating the substrate 140 at room temperature (typically 20 ° C.) to 300 ° C., more preferably 50 to 200 ° C. may be provided.
[0144]
In FIG. 7B, a side view of the film formation chamber (light emitting layer) 143 corresponds to a state in which the head portion moving along the substrate surface is viewed from above. An arrow 151 indicates the moving direction of the head portion 143a. The head 151 moves from one end of the substrate 140 to the other end in parallel with the substrate surface, and solution coating and thin film formation are performed. In addition, the distance (L) between the substrate 140 and the tip portion (jet port) of the head portion 143a is 2 to 20 mm.
[0145]
Further, at this time, nitrogen, rare gas or other fluorinated gas flows in the film forming chambers 143 and 145 from the top to the bottom in the direction perpendicular to the paper surface, and the substrate 140 and the head portions 143a and 145a. A laminar flow (laminar flow) is formed between them. At this time, the flowing inert gas can be heated instead of or in combination with the substrate. Of course, it is also possible to reduce the pressure without introducing an inert gas.
[0146]
Further, the structure of the head portion of the solution coating apparatus provided in the film formation chambers 143 and 145 will be described with reference to FIG.
[0147]
In FIG. 8A, a substrate 901 is supported by a susceptor 902 made of a magnetic material and is installed in a face-up manner. And the head part 903 of a solution coating apparatus is provided close to the surface side of the substrate 901. At this time, an enlarged portion of the tip of the nozzle (injection port) 904 is indicated by a dotted line portion 905. The inside of the nozzle has a hollow structure, and a core 906 fixed inside the nozzle, and a cap made of a magnetic body connected to the core 906 via an elastic body (a spring in this embodiment) 907 (hereinafter referred to as a magnetic body). 908). The outer side of the hollow structure is filled with a solution 909 containing a phosphor composition.
[0148]
The magnetic cap 908 is selected from a material that exerts a repulsive force between the magnetic cap 908 and the susceptor 902 made of a magnetic material. In the case of FIG. 8A, the distance (X1) between the substrate 901 and the magnetic cap 908 is a distance at which repulsive force does not work effectively between the susceptor 902 and the magnetic cap 908, and the magnetic material And the distance determined by the thickness of the substrate. When the repulsive force does not work effectively between the susceptor 902 and the magnetic body cap 908, the magnetic body cap 908 is pushed by the elastic body 907 and packed at the tip of the nozzle 904, and the solution 909 containing the phosphor composition is formed. It is designed not to be jetted.
[0149]
On the other hand, after starting the solution application, the distance between the substrate 901 and the magnetic cap 908 is reduced to X2, as shown in FIG. 8B. This distance X2 is a distance at which a repulsive force is sufficiently exerted between the susceptor 902 and the magnetic cap 908, and the magnetic cap 908 compresses the elastic body 907 and is pushed into the hollow structure by the repulsive force. As a result, a space is secured at the tip of the nozzle 904, and the solution 909 containing the phosphor composition is injected. In this manner, the solution 909 containing the phosphor composition is applied to the surface of the substrate 901, and the solvent is volatilized under reduced pressure, or the solvent is volatilized by heating the substrate 901 to form the phosphor 910.
[0150]
As described above, it is possible to apply the internal solution when approaching a certain distance by using a magnetic material having a repulsive force acting as a cap on both the susceptor and the nozzle tip. Thus, the uniformity of the distance between the substrate and the head portion (strictly, the nozzle) can be ensured. This technique is particularly effective when a solution is applied on a substrate having irregularities.
[0151]
The film formation chamber 147 is a chamber for forming a metal film to be a cathode by vapor deposition, and the substrate 140 is disposed above the vapor deposition source 147a to perform film formation. For example, a metal film containing an element belonging to Group 1 or Group 2 of the periodic table, such as an alloy film of aluminum and lithium, can be formed. A chamber for depositing a metal film to be a cathode by sputtering may be used. In that case, a deposition chamber in which the target is set below the substrate, or a substrate 140 is placed vertically and passes through a rectangular target. A film formation chamber in which film formation is performed in between may be used.
[0152]
In the film formation chamber 147, a film can be selectively formed by setting a substrate by a face-down method, performing position alignment of a vapor deposition mask with a CCD or the like, and performing vapor deposition by a resistance heating method.
[0153]
A substrate reversing chamber 146 for setting the substrate in a face-down manner is provided in the film forming chamber 147. Note that the substrate reversing chamber is provided with a mechanism capable of heating under reduced pressure. By setting the face down, dust and the like are less likely to adhere.
[0154]
In the manufacturing apparatus of FIG. 7, each chamber is partitioned by a gate valve, and can be hermetically cut off from other chambers. Further, each chamber is connected to an evacuation pump so that a vacuum can be maintained or an inert gas can be introduced to create a reduced pressure atmosphere. As the vacuum pump, a magnetic levitation turbo molecular pump, a cryopump or a dry pump can be used. Further, it is desirable that the inert gas to be introduced is sufficiently purified in advance through a purifier or the like.
[0155]
Note that a provisional baking such as heating under reduced pressure or a main baking step may be provided between the film forming chambers and between the spin chamber and the film forming chamber.
[0156]
In addition, this example can be freely combined with any one of Embodiment Modes 1 to 6, Example 1, and Example 2.
[0157]
[Example 4]
In this example, an energy barrier existing in an organic compound film is relaxed to improve carrier mobility, and at the same time, an element having functions of a plurality of materials as in the functional separation of a stacked structure is manufactured. Show.
[0158]
Regarding the relaxation of the energy barrier in the laminated structure, it is noticeable in the technique of inserting the carrier injection layer. That is, the energy barrier can be designed in a step shape by inserting a material that relaxes the energy barrier at the interface of the stacked structure having a large energy barrier. As a result, the carrier injection property from the electrode can be improved and the drive voltage can be lowered to some extent. However, the problem is that by increasing the number of layers, the number of organic interfaces increases conversely. This is considered to be the reason why the single layer structure holds the top data of the driving voltage and power efficiency. In other words, by overcoming this point, while taking advantage of the advantages of a laminated structure (a variety of materials can be combined and no complicated molecular design is required), the driving voltage and power efficiency of a single-layer structure can be achieved. I can catch up.
[0159]
Therefore, in this example, when an organic compound film composed of a plurality of functional regions is formed between the anode and the cathode of the light emitting element, the first functional region and the first functional region are not the conventional laminated structure in which a clear interface exists. A structure having a mixed region made of both the material constituting the first functional region and the material constituting the second functional region is formed between the two functional regions.
[0160]
In addition, a case where a material capable of converting triplet excitation energy into light emission is added to the mixed region as a dopant is also included. In forming the mixed region, a concentration gradient may be provided in the mixed region.
[0161]
By applying such a structure, it is considered that the energy barrier existing between the functional regions is reduced as compared with the conventional structure, and the carrier injection property is improved. That is, the energy barrier between the functional regions is relaxed by forming a mixed region. Therefore, it is possible to reduce the drive voltage and prevent the luminance from being lowered.
[0162]
From the above, in this example, the region in which the first organic compound can function (the first functional region) and the second organic compound different from the substance constituting the first functional region function. In the manufacture of a light-emitting element including at least a region that can be expressed (second functional region) and a light-emitting device including the light-emitting element, the first functional region and the second functional region are provided between the first functional region and the second functional region. A mixed region comprising an organic compound constituting the functional region and an organic compound constituting the second functional region is prepared.
[0163]
First, a first organic compound is applied. Note that the first organic compound is jetted toward the substrate by an inkjet method. Accordingly, the first functional region 610 illustrated in FIG. 9A can be formed.
[0164]
And after apply | coating a 1st organic compound, a 2nd organic compound is apply | coated in another film-forming chamber. Note that the second organic compound is also jetted toward the substrate by an inkjet method.
[0165]
And after apply | coating a 2nd organic compound, a 3rd organic compound is apply | coated in another film-forming chamber. Note that the third organic compound is also jetted toward the substrate by an inkjet method.
[0166]
Next, firing is performed. Here, a first mixed region 611 composed of the first organic compound and the second organic compound, and a second mixed region 613 composed of the second organic compound and the third organic compound can be formed. .
[0167]
Finally, a light emitting element is completed by forming a cathode.
[0168]
As described above, a light-emitting element having a plurality of functions can be manufactured without showing a clear stacked structure (that is, without a clear organic interface).
[0169]
In the present embodiment, the method of forming the mixed region by continuously laminating three kinds of organic compounds by the ink jet method is shown, but it is not particularly limited. A temporary baking step may be added between the respective films.
[0170]
In addition, this embodiment can be freely combined with any one of Embodiment Modes 1 to 6 and Embodiments 1 to 3.
[0171]
[Example 5]
In this embodiment, an example of manufacturing a light-emitting device (a top emission structure) including a light-emitting element having an organic compound layer as a light-emitting layer over a substrate having an insulating surface is shown in FIG.
[0172]
10A is a top view illustrating the light-emitting device, and FIG. 10B is a cross-sectional view taken along line AA ′ in FIG. 10A. Reference numeral 1101 indicated by a dotted line denotes a source signal line driver circuit, 1102 denotes a pixel portion, and 1103 denotes a gate signal line driver circuit. Reference numeral 1104 denotes a transparent sealing substrate, 1105 denotes a first sealing material, and the inside surrounded by the first sealing material 1105 is filled with a transparent second sealing material 1107. Note that the first sealing material 1105 contains a gap material for maintaining the distance between the substrates.
[0173]
Reference numeral 1108 denotes a wiring for transmitting signals input to the source signal line driver circuit 1101 and the gate signal line driver circuit 1103. A video signal or a clock signal is received from an FPC (flexible printed circuit) 1109 serving as an external input terminal. receive. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC.
[0174]
Next, a cross-sectional structure is described with reference to FIG. A driver circuit and a pixel portion are formed over the substrate 1110. Here, a source signal line driver circuit 1101 and a pixel portion 1102 are shown as the driver circuits.
[0175]
Note that as the source signal line driver circuit 1101, a CMOS circuit in which an n-channel TFT 1123 and a p-channel TFT 1124 are combined is formed. The TFT forming the driving circuit may be formed by a known CMOS circuit, PMOS circuit or NMOS circuit. Further, in this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown, but this is not always necessary, and it can be formed outside the substrate. Further, the structure of a TFT having a polysilicon film as an active layer is not particularly limited, and may be a top gate type TFT or a bottom gate type TFT.
[0176]
The pixel portion 1102 is formed by a plurality of pixels including a switching TFT 1111, a current control TFT 1112, and a first electrode (anode) 1113 electrically connected to the drain thereof. The current control TFT 1112 may be an n-channel TFT or a p-channel TFT, but when connected to the anode, it is preferably a p-channel TFT. In addition, it is preferable to appropriately provide a storage capacitor (not shown). Note that here, only a cross-sectional structure of one pixel among the infinitely arranged pixels is shown, and an example in which two TFTs are used for the one pixel is shown. However, three or more TFTs are appropriately used. , May be used.
[0177]
Here, since the first electrode 1113 is in direct contact with the drain of the TFT, the lower layer of the first electrode 1113 is a material layer that can be in ohmic contact with the drain made of silicon, and a layer containing an organic compound. It is desirable that the uppermost layer in contact is a material layer having a large work function. For example, when a three-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film is used, the resistance as a wiring is low, a good ohmic contact can be obtained, and the film can function as an anode. . The first electrode 1113 may be a single layer such as a titanium nitride film, a chromium film, a tungsten film, a Zn film, or a Pt film, or a stack of three or more layers may be used.
[0178]
In addition, insulators (referred to as banks, partition walls, barriers, banks, or the like) 1114 are formed on both ends of the first electrode (anode) 1113. The insulator 1114 may be formed using an organic resin film or an insulating film containing silicon. Here, as the insulator 1114, a positive-type photosensitive acrylic resin film is used to form an insulator having a shape shown in FIG.
[0179]
In order to improve the coverage, a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulator 1114. For example, when positive photosensitive acrylic is used as a material for the insulator 1114, it is preferable that only the upper end portion of the insulator 1114 have a curved surface with a curvature radius (0.2 μm to 3 μm). As the insulator 1114, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used.
[0180]
Alternatively, the insulator 1114 may be covered with a protective film formed of an aluminum nitride film, an aluminum nitride oxide film, a thin film containing carbon as its main component, or a silicon nitride film.
[0181]
A layer 1115 containing an organic compound is selectively formed over the first electrode (anode) 1113 by an inkjet method under reduced pressure or atmospheric pressure. Further, a second electrode (cathode) 1116 is formed over the layer 1115 containing an organic compound. As the cathode, a material having a small work function (Al, Ag, Li, Ca, or an alloy thereof, MgAg, MgIn, AlLi, CaF) ₂ Or CaN). Here, a thin metal film, a transparent conductive film (ITO (indium tin oxide alloy), indium zinc oxide alloy (In) are used as the second electrode (cathode) 1116 so that light is transmitted. ₂ O _Three (ZnO), zinc oxide (ZnO), or the like) is used. In this manner, a light-emitting element 1118 including the first electrode (anode) 1113, the layer 1115 containing an organic compound, and the second electrode (cathode) 1116 is formed. In this embodiment, as the layer 1115 containing an organic compound, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) is applied by an inkjet method under reduced pressure, and then spin-rotated to form a film thickness. And then the emission center dye (1,1,4,4-tetraphenyl-1,3-butadiene (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethyl) under reduced pressure. (Amino-styryl) -4H-pyran (DCM1), Nile red, coumarin 6 and the like) A doped polyvinylcarbazole (PVK) solution is sprayed and applied, followed by main baking by heating under reduced pressure. In this embodiment, since the light-emitting element 1118 emits white light, a color filter including a colored layer 1131 and a light-blocking layer (BM) 1132 (for the sake of simplicity, an overcoat layer is not shown here) is provided.
[0182]
Further, if each layer containing an organic compound capable of emitting R, G, and B is selectively formed, a full color display can be obtained without using a color filter.
[0183]
In addition, a transparent protective layer 1117 is formed to seal the light emitting element 1118. As this transparent protective layer 1117, an insulating film mainly composed of silicon nitride or silicon nitride oxide obtained by sputtering (DC method or RF method) or PCVD method, a thin film mainly composed of carbon (DLC film, CN film, etc.) ) Or a laminate of these. If a silicon target is used and formed in an atmosphere containing nitrogen and argon, a silicon nitride film having a high blocking effect against impurities such as moisture and alkali metals can be obtained. A silicon nitride target may be used. The transparent protective layer may be formed using a film forming apparatus using remote plasma. Moreover, in order to allow light emission to pass through the transparent protective layer, it is preferable to make the film thickness of the transparent protective layer as thin as possible.
[0184]
In addition, in order to seal the light emitting element 1118, the sealing substrate 1104 is attached to the first sealing material 1105 and the second sealing material 1107 in an inert gas atmosphere. Note that an epoxy resin is preferably used as the first sealing material 1105 and the second sealing material 1107. The first sealing material 1105 and the second sealing material 1107 are preferably materials that do not transmit moisture and oxygen as much as possible.
[0185]
Further, in this embodiment, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar, polyester, acrylic, or the like is used as a material constituting the sealing substrate 1104 in addition to a glass substrate or a quartz substrate. be able to. Further, after the sealing substrate 1104 is bonded using the first sealing material 1105 and the second sealing material 1107, it is also possible to seal with a third sealing material so as to cover the side surface (exposed surface).
[0186]
By enclosing the light emitting element in the first sealing material 1105 and the second sealing material 1107 as described above, the light emitting element can be completely blocked from the outside, and deterioration of the organic compound layer such as moisture and oxygen from the outside can be performed. It can prevent the urging substance from entering. Therefore, a highly reliable light-emitting device can be obtained.
[0187]
In addition, when a transparent conductive film is used for the first electrode 1113, a double-sided light-emitting device can be manufactured.
[0188]
In this embodiment, an example in which a layer containing an organic compound is formed on the anode and a cathode that is a transparent electrode is formed on the layer containing the organic compound (hereinafter referred to as a top emission structure) is shown. However, it has a light emitting element in which a layer containing an organic compound is formed on the anode and a cathode is formed on the organic compound layer, and the light emitted in the layer containing the organic compound is transferred from the transparent electrode anode to the TFT. A structure of taking out (hereinafter referred to as a bottom emission structure) may be employed.
[0189]
Here, an example of a light emitting device having a bottom emission structure is shown in FIG.
[0190]
11A is a top view illustrating the light-emitting device, and FIG. 11B is a cross-sectional view taken along line AA ′ in FIG. 11A. Reference numeral 1201 indicated by a dotted line denotes a source signal line driver circuit, 1202 denotes a pixel portion, and 1203 denotes a gate signal line driver circuit. Further, 1204 is a sealing substrate, 1205 is a sealing material containing a gap material for maintaining the space between the sealed spaces, and the inside surrounded by the sealing material 1205 is an inert gas (typically nitrogen). ). A small amount of moisture is removed from the inner space surrounded by the sealant 1205 by the desiccant 1207 and the interior space is sufficiently dry.
[0191]
Reference numeral 1208 denotes a wiring for transmitting signals input to the source signal line driver circuit 1201 and the gate signal line driver circuit 1203, and a video signal and a clock signal are received from an FPC (flexible printed circuit) 1209 as an external input terminal. receive.
[0192]
Next, a cross-sectional structure is described with reference to FIG. A driver circuit and a pixel portion are formed over the substrate 1210. Here, a source signal line driver circuit 1201 and a pixel portion 1202 are shown as the driver circuits. Note that as the source signal line driver circuit 1201, a CMOS circuit in which an n-channel TFT 1223 and a p-channel TFT 1224 are combined is formed.
[0193]
The pixel portion 1202 is formed by a plurality of pixels including a switching TFT 1211, a current control TFT 1212, and a first electrode (anode) 1213 made of a transparent conductive film electrically connected to the drain thereof.
[0194]
Here, the first electrode 1213 is formed so as to partially overlap with the connection electrode, and the first electrode 1213 is electrically connected to the drain region of the TFT through the connection electrode. The first electrode 1213 is a transparent conductive film having a large work function (ITO (indium tin oxide alloy), indium zinc oxide alloy (In ₂ O _Three -ZnO), zinc oxide (ZnO) or the like is preferably used.
[0195]
In addition, insulators (referred to as banks, partition walls, barriers, banks, or the like) 1214 are formed at both ends of the first electrode (anode) 1213. In order to improve the coverage, a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulator 1214. Alternatively, the insulator 1214 may be covered with a protective film made of an aluminum nitride film, an aluminum nitride oxide film, a thin film containing carbon as its main component, or a silicon nitride film.
[0196]
A layer 1215 containing an organic compound is selectively formed over the first electrode (anode) 1213 by an inkjet method under reduced pressure or atmospheric pressure. Further, a second electrode (cathode) 1216 is formed over the layer 1215 containing an organic compound. As the cathode, a material having a small work function (Al, Ag, Li, Ca, or an alloy thereof, MgAg, MgIn, AlLi, CaF) ₂ Or CaN). In this manner, a light-emitting element 1218 including the first electrode (anode) 1213, the layer 1215 containing an organic compound, and the second electrode (cathode) 1216 is formed. The light emitting element 1218 emits light in the direction of the arrow shown in FIG. Here, the light-emitting element 1218 is one of light-emitting elements that can obtain R, G, or B monochromatic light emission, and includes three layers each including an organic compound that selectively emits R, G, and B light-emitting elements. Full color with light emitting elements.
[0197]
In addition, a protective layer 1217 is formed to seal the light emitting element 1218. As this transparent protective layer 1217, an insulating film mainly composed of silicon nitride or silicon nitride oxide obtained by sputtering (DC method or RF method) or PCVD method, or a thin film mainly composed of carbon (DLC film, CN film) Etc.) or a laminate of these. If a silicon target is used and formed in an atmosphere containing nitrogen and argon, a silicon nitride film having a high blocking effect against impurities such as moisture and alkali metals can be obtained. A silicon nitride target may be used. Further, the protective layer may be formed using a film forming apparatus using remote plasma.
[0198]
In addition, in order to seal the light emitting element 1218, a sealing substrate 1204 is attached with a sealant 1205 in an inert gas atmosphere. A recess formed in advance by a sandblast method or the like is formed in the sealing substrate 1204, and a desiccant 1207 is attached to the recess. Note that an epoxy resin is preferably used as the sealant 1205. The sealing material 1205 is preferably a material that does not transmit moisture and oxygen as much as possible.
[0199]
In this embodiment, as a material for forming the sealing substrate 1204 having the recesses, a metal substrate, a glass substrate, a quartz substrate, FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar, polyester, acrylic, etc. A plastic substrate made of can be used. It is also possible to seal with a metal can with a desiccant attached inside.
[0200]
Further, this embodiment can be freely combined with any one of Embodiment Modes 1 to 6 and Embodiments 1 to 4.
[0201]
[Example 6]
In this embodiment, a cross-sectional structure of one pixel, particularly a connection between a light emitting element and a TFT and a shape of a partition wall arranged between the pixels will be described.
[0202]
In FIG. 12A, 40 is a substrate, 41 is a partition wall (also called bank), 42 is an insulating film, 43 is a first electrode (anode), 44 is a layer containing an organic compound, and 45 is a second electrode ( A cathode 46 is a TFT.
[0203]
In the TFT 46, 46a is a channel formation region, 46b and 46c are source regions or drain regions, 46d is a gate electrode, and 46e and 46f are source or drain electrodes. Although a top gate type TFT is shown here, it is not particularly limited, and may be an inverted stagger type TFT or a forward stagger type TFT. Note that 46 f is an electrode for connecting the TFT 46 by partially overlapping with the first electrode 43.
[0204]
FIG. 12B illustrates a cross-sectional structure which is partly different from that in FIG.
[0205]
In FIG. 12B, the first electrode and the electrode overlap with each other in a manner different from the structure of FIG. 12A, and after patterning the first electrode, the electrodes are formed so as to partially overlap. It is connected with TFT.
[0206]
FIG. 12C illustrates a cross-sectional structure which is partly different from that in FIG.
[0207]
In FIG. 12C, an interlayer insulating film is further provided, and the first electrode is connected to the TFT electrode through a contact hole.
[0208]
In addition, the cross-sectional shape of the partition wall 41 may be tapered as shown in FIG. After the resist is exposed using a photolithography method, it is obtained by etching a non-photosensitive organic resin or an inorganic insulating film.
[0209]
If a positive photosensitive organic resin is used, the shape shown in FIG. 12E and a shape having a curved surface at the upper end can be obtained.
[0210]
If a negative photosensitive resin is used, the shape as shown in FIG. 12F and the shape having curved surfaces at the upper end and the lower end can be obtained.
[0211]
This embodiment can be freely combined with any one of Embodiment Modes 1 to 6 and Embodiments 1 to 5.
[0212]
[Example 7]
In this embodiment, an example of manufacturing a passive matrix light-emitting device (also referred to as a simple matrix light-emitting device) is described.
[0213]
First, a plurality of first wirings are formed in a stripe shape on a glass substrate with a material such as ITO (a material to be an anode). Next, a partition made of a resist or a photosensitive resin is formed so as to surround the light emitting region. Next, a layer containing an organic compound is formed in a region surrounded by the partition wall by an evaporation method or an inkjet method. In the case of full-color display, a material is appropriately selected and a layer containing an organic compound is formed by an inkjet method under reduced pressure. Next, a plurality of stripe-shaped second wirings are formed of a metal material (material serving as a cathode) such as Al or Al alloy so as to intersect with the first wirings made of ITO on the partition and the layer containing the organic compound. To do. Through the above steps, a light-emitting element using the layer containing an organic compound as a light-emitting layer can be formed.
[0214]
Next, a sealing substrate is attached with a sealing material, or a protective film is provided over the second wiring and sealed. As the sealing substrate, a glass substrate, a plastic substrate made of a synthetic resin made of polypropylene, polypropylene sulfide, polycarbonate, polyetherimide, polyphenylene sulfide, polyphenylene oxide, polysulfone, or polyphthalamide is used.
[0215]
FIG. 13A shows an example of a cross-sectional view of the display device of this embodiment.
[0216]
A pixel portion 1321 in which a first electrode and a second electrode intersect and a light emitting element is formed at the intersecting portion is provided on the main surface of the substrate 1300. That is, a pixel portion 1321 in which light-emitting pixels are arranged in a matrix is formed. The number of pixels is 640 × 480 dots for the VGA specification, 1024 × 768 dots for the XGA specification, 1365 × 1024 dots for the SXGA specification, and 1600 × 1200 dots for the UXGA specification. The number of second electrodes is provided accordingly. Further, an input terminal portion in which a terminal pad connected to an external circuit is formed is provided at an edge portion of the substrate 1301 and in a peripheral portion of the pixel portion 1321.
[0217]
In the display device illustrated in FIG. 13A, a thin film 1305 (electroluminescence) including a first electrode 1302 extending in the left-right direction on the main surface of a substrate 1300 and a light emitter formed thereon is provided in a pixel portion in the display device illustrated in FIG. In the following description, it is referred to as an EL layer for convenience) and a second electrode 1306 formed in the upper layer and extending in the vertical direction is formed, and a pixel is formed at the intersection. That is, the pixels are arranged in a matrix by forming the first electrode 1302 and the second electrode 1306 in the row direction and the column direction. The input terminal is formed of the same material as the first electrode or the second electrode. The number of input terminals is the same as the number of first electrodes and second electrodes arranged in the row direction and the column direction.
[0218]
The cross-sectional shape of the partition wall 1304 has a curved surface shape from the lower end portion in contact with the first electrode 1302 to the upper end portion. The curved surface shape is a shape having at least one radius of curvature centered on the partition wall or its lower layer side, or at least one first radius of curvature centered outside the partition wall 1304 at the lower end contacting the first electrode 1302. And at least one second radius of curvature centered on the partition wall or the lower layer side at the upper end of the partition wall 1304. The cross-sectional shape may be such that the curvature continuously changes from the lower end portion to the upper end portion of the partition wall 1304. The EL layer is formed along the curved surface shape, and stress is relieved by the curved surface shape. That is, the light-emitting element in which different members are stacked has an effect of alleviating distortion due to thermal stress.
[0219]
A mode in which a counter substrate 1350 for sealing the pixel portion 1321 is fixed with a sealant 1341 is shown. A space between the substrate 1301 and the counter substrate 1350 may be filled with an inert gas, or an organic resin material 1340 may be enclosed. In any case, since the light-emitting element in the pixel portion 1321 is covered with the barrier insulating film 1307, deterioration due to exogenous impurities can be prevented without providing a desiccant or the like.
[0220]
In FIG. 13A, colored layers 1342 to 1344 are formed on the counter substrate 1350 side corresponding to the pixels of the pixel portion 1321. The planarization layer 1345 prevents a step due to the colored layer. On the other hand, FIG. 13B illustrates a structure in which colored layers 1342 to 1344 are provided on the substrate 1301 side, and the first electrode 1302 is formed over the planarization film 1345. FIG. 13B is different from FIG. 13A in the light emission direction. In addition, the same code | symbol is used for the same part.
[0221]
In addition, the present invention can be implemented not only in a full-color display device but also in a single-color light emitting device such as a surface light source and an electrical decoration device.
[0222]
In addition, this embodiment can be freely combined with any one of Embodiment Modes 1 to 6.
[0223]
[Example 8]
An electronic device can be manufactured by incorporating a light-emitting device obtained by implementing the present invention into a display portion. Electronic devices include video cameras, digital cameras, goggle-type displays (head-mounted displays), navigation systems, sound playback devices (car audio, audio components, etc.), notebook-type personal computers, game devices, and portable information terminals (mobile computers, A mobile phone, a portable game machine, an electronic book, or the like), an image playback device including a recording medium (specifically, a display capable of playing back a recording medium such as a digital versatile disc (DVD) and displaying the image) Apparatus). Specific examples of these electronic devices are shown in FIGS.
[0224]
FIG. 14A illustrates a television which includes a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, a video input terminal 2005, and the like. The present invention can be applied to the display portion 2003. Note that all information display televisions such as a personal computer, a TV broadcast reception, and an advertisement display are included.
[0225]
FIG. 14B shows a digital camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like. The present invention can be applied to the display portion 2102.
[0226]
FIG. 14C illustrates a laptop personal computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. The present invention can be applied to the display portion 2203.
[0227]
FIG. 14D illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. The present invention can be applied to the display portion 2302.
[0228]
FIG. 14E shows a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 2401, a housing 2402, a display portion A2403, a display portion B2404, and a recording medium (DVD or the like). A reading unit 2405, operation keys 2406, a speaker unit 2407, and the like are included. Although the display portion A 2403 mainly displays image information and the display portion B 2404 mainly displays character information, the present invention can be applied to the display portions A, B 2403, and 2404. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.
[0229]
FIG. 14F shows a game machine, which includes a main body 2501, a display portion 2505, operation switches 2504, and the like.
[0230]
FIG. 14G illustrates a video camera, which includes a main body 2601, a display portion 2602, a housing 2603, an external connection port 2604, a remote control receiving portion 2605, an image receiving portion 2606, a battery 2607, an audio input portion 2608, operation keys 2609, and the like. . The present invention can be applied to the display portion 2602.
[0231]
FIG. 14H illustrates a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, an audio input portion 2704, an audio output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. The present invention can be applied to the display portion 2703. Note that the display portion 2703 can suppress current consumption of the mobile phone by displaying white characters on a black background.
[0232]
As described above, the display device obtained by implementing the present invention may be used as a display unit of any electronic device. Note that a light-emitting device manufactured using any structure of Embodiment Modes 1 to 6 and Examples 1 to 7 may be used for the electronic device of this embodiment mode.
[0233]
【The invention's effect】
According to the present invention, it is possible to produce a light-emitting device with excellent film thickness uniformity, high material utilization efficiency, and high throughput by a low-cost and simple method, and further, the reliability of the light-emitting device. Can also be improved.
[Brief description of the drawings]
FIG. 1 is a diagram showing Embodiment Mode 1;
FIG. 2 is a diagram showing Embodiment Mode 1;
FIG. 3 shows a second embodiment.
FIG. 4 shows a third embodiment.
5 is a diagram showing Example 1. FIG.
6 is a diagram showing Example 2. FIG.
7 shows a third embodiment. FIG.
8 is a diagram showing Example 3. FIG.
FIG. 9 shows a fourth embodiment.
10 is a diagram showing Example 5. FIG.
FIG. 11 shows a fifth embodiment.
12 is a diagram showing Example 6. FIG.
13 is a diagram showing Example 7. FIG.
14 is a diagram showing Example 8. FIG.
FIG. 15 shows a fifth embodiment.
FIG. 16 shows a sixth embodiment.

Claims (2)

A head portion including a nozzle, a supply pipe for supplying a phosphor composition to the nozzle, a ball provided in the supply pipe, and a piezoelectric element;
A container for storing the phosphor composition,
Before Symbol first and second supply pipes are provided for one nozzle, and the first and second supply pipe is connected to said one container,
The first supply pipe and the second supply pipe are provided symmetrically about the piezoelectric element,
The inner diameter of the supply tube has a region smaller than the diameter of the ball, and a larger region;
The supply pipe has a protrusion in a region larger than the diameter of the ball of the supply pipe;
The film forming apparatus, wherein the ball is provided between a region of the supply pipe smaller than the diameter of the ball and a region having a protrusion. The film forming apparatus according to claim 1, further comprising means for depressurizing the film forming chamber.

Images