JP4835080B2 - Solid-state imaging device manufacturing method and solid-state imaging device - Google Patents

Description

The present invention relates to a method for manufacturing a solid-state image sensor and a solid-state image sensor .

  In a CCD solid-state imaging device used for an area sensor or the like, a photoelectric conversion unit array including a plurality of photoelectric conversion units and a transfer electrode array including a plurality of transfer electrodes are arranged in parallel on a semiconductor substrate. The transfer electrode array is disposed on the charge transfer path formed on the semiconductor substrate, and the plurality of transfer electrodes are sequentially driven to transfer charges along the charge transfer path.

  In particular, in an inter-transfer type CCD solid-state imaging device, the transfer electrode array is covered with a light-shielding film to prevent light from entering the charge transfer path. This is because in a CCD solid-state imaging device, charges are sequentially transferred under the transfer electrodes of the adjacent pixels, so if light enters the charge transfer path during the transfer, the amount of charge being transferred changes. This is because a smear phenomenon appearing as a line on the screen is generated, and in order to prevent this smear phenomenon, light is shielded by a light shielding film. As a document describing a solid-state imaging device having this kind of light shielding film, there is, for example, Japanese Patent Laid-Open No. 10-178166.

Japanese Patent Laid-Open No. 10-178166

  The light shielding performance of the light shielding film is determined by the extinction coefficient and the film thickness of the material of the light shielding film. The use of a material having a large extinction coefficient is advantageous because the film thickness can be reduced. Currently, metal materials such as aluminum, tungsten, and molybdenum are generally used as light shielding films for CCD solid-state imaging devices, and these are known as materials having a large extinction coefficient with respect to visible light. . A light shielding film made of tungsten requires a film thickness of approximately 200 nm in order to obtain a light shielding performance that attenuates visible light to −100 dB.

  The photoelectric conversion part of the CCD solid-state imaging device is formed on a semiconductor substrate in a valley sandwiched between transfer electrode rows having a large height. Since the transfer electrode row covers not only the upper surface but also the side wall surface with the light shielding film, if the thickness of the light shielding film is large, the side wall surface of the transfer electrode row protrudes and is sandwiched between the transfer electrode rows. The width of the valley narrows. As a result, the opening area of the photoelectric conversion unit is reduced and the sensitivity is lowered. This is the reason why the smaller the thickness of the light shielding film, the more advantageous. Also, in pursuit of further downsizing of the solid-state imaging device, it is important to reduce the thickness of the light shielding film. Therefore, it is desired to use a film material having a larger extinction coefficient as the material of the light shielding film.

  Ruthenium and iridium are known as materials having a larger extinction coefficient than tungsten, and the extinction coefficient for light having a wavelength region near 700 nm is 2.78 to 2.91 for tungsten. For ruthenium, it is 4.45 to 4.22. For iridium, it is 4.81 to 4.92. Therefore, ruthenium and iridium have an extinction coefficient of about 60% larger than that of tungsten, and if these materials are used, the thickness of the light shielding film can be reduced by about 60%.

  However, in the CCD solid-state imaging device, after forming the light shielding film, in order to form a waveguide or a lens on the upper layer, the light guide property using boron phosphosilicate glass (BPSG), phosphosilicate glass (PSG) or the like as a material is used. A film is formed. A BPSG film or a PSG film is a light guiding film that exhibits oxidation during film formation, and particularly exhibits strong oxidation in a heating reflow process included in the film formation process. On the other hand, since ruthenium and iridium are materials that are easily oxidized, if a light shielding film is formed using these materials, they are easily oxidized when a light guide film is formed thereon. In particular, when ruthenium (Ru) becomes an oxide (RuOx), the extinction coefficient is lower than that of a single substance, and the desired light shielding performance cannot be obtained. In addition, part of ruthenium may be vaporized as volatile ruthenium tetroxide (RuO4), which also locally reduces the thickness of the light-shielding film, thereby reducing the light-shielding performance of that part. As a result, smear characteristics may be deteriorated.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a light-shielding film in which a photoelectric conversion unit array including a plurality of photoelectric conversion units and a transfer electrode array including a plurality of transfer electrodes are arranged in parallel. In the solid-state imaging device in which the upper surface and the side wall surface of the transfer electrode array are covered, and the light guide film that exhibits oxidizing properties at the time of film formation is formed on the photoelectric conversion unit and the light shielding film. It is to prevent the light shielding film from being oxidized during the film formation.

In order to achieve the above object, a solid-state imaging device manufacturing method according to the present invention includes a step of forming a photoelectric conversion unit row and a transfer electrode row on a semiconductor substrate, a step of forming an insulating film covering the gate electrode, and a light shielding film. Forming a hard mask material layer on the material layer, forming an etching mask on the hard mask material layer, etching the hard mask material layer, and providing a hard portion having an opening corresponding to the photoelectric conversion portion; The step of forming a mask and the light shielding film material layer are etched from the opening of the hard mask, and the light shielding film material layer of the opening corresponding to the photoelectric conversion part and the hard mask on the side wall surface of the transfer electrode removing the light-shielding film material layer of the bottom portion, and forming a light shielding film, a photoelectric conversion unit, on the hard mask and the light-shielding film, and a step of forming a passivation layer for preventing oxidation To. An etching mask is formed on the passivation layer, the etching is performed on the passivation layer, and an opening corresponding to the photoelectric conversion portion is formed in the passivation layer. On the passivation layer, a first light-guiding film having a concave surface above the photoelectric conversion portion is formed by using boron phosphosilicate glass (BPSG), phosphosilicate glass (PSG), arsenic glass (AsSG), and tetraethyl orthosilicate (TEOS). And a step of forming a film using at least one selected from ozone. In addition, a second light guide film having a convex surface following the concave surface of the first light guide film above the photoelectric conversion unit on the first light guide film and having a refractive index different from that of the first light guide film. , Boron phosphorous silicate glass (BPSG), phosphosilicate glass (PSG), arsenic glass (AsSG), and tetraethyl orthosilicate (TEOS) + one step selected from ozone.

Further, in the method of manufacturing a solid-state imaging device according to the present invention, the step of forming the light shielding film includes the step of forming a hard mask material layer on the light shielding film material layer, the etching mask is formed on the hard mask material layer, The process includes etching the hard mask material layer and the light shielding film material layer to form a hard mask and a light shielding film having an opening corresponding to the photoelectric conversion portion.

The solid-state imaging device according to the present invention includes a semiconductor substrate, a photoelectric conversion unit array including a plurality of photoelectric conversion units arranged in parallel on the semiconductor substrate, a transfer electrode array including a plurality of transfer electrodes, and a transfer electrode array. A light-shielding film made of a metal material covering the upper surface and the side wall surface. Further, except for the lower end portion of the side wall surface of the light shielding film, a hard mask that covers the light shielding film, an upper surface and a side wall surface of the hard mask, and an antioxidant for covering a portion of the light shielding film that is not covered by the hard mask . A passivation layer, a boron phosphorous silicate glass (BPSG), a phosphorous silicate glass (PSG), an arsenic glass (AsSG) formed on the semiconductor substrate so as to cover the passivation layer and having a concave surface above the photoelectric conversion unit, And the 1st light guide film | membrane containing 1 or more types chosen from tetraethyl orthosilicate (TEOS) + ozone is provided. Further, one type selected from boron phosphosilicate glass (BPSG), phosphosilicate glass (PSG), arsenic glass (AsSG), and tetraethyl orthosilicate (TEOS) + ozone formed on the first light guide film. The 2nd light guide film containing the above is provided.

In addition, the solid-state imaging device according to the present invention includes a hard mask between the light shielding film and the passivation layer.

Also, the solid-state imaging device semiconductor substrate to use, the photoelectric conversion portion array including a plurality of photoelectric conversion portions are arranged in parallel in a semiconductor substrate, and a transfer electrode array including a plurality of transfer electrodes, the transfer electrode array A light shielding film made of a metal material covering the upper surface and the side wall surface is provided. Also, an oxidation passivation layer covering the light-shielding film, and boron phosphorous silicate glass (BPSG) and phosphosilicate glass formed on the semiconductor substrate so as to cover the passivation layer and have a concave surface above the photoelectric conversion portion. A first light-guiding film including at least one selected from (PSG), arsenic glass (AsSG), and tetraethylorthosilicate (TEOS) + ozone. Further, one type selected from boron phosphosilicate glass (BPSG), phosphosilicate glass (PSG), arsenic glass (AsSG), and tetraethyl orthosilicate (TEOS) + ozone formed on the first light guide film. The 2nd light guide film containing the above is provided.

  According to the present invention, the light-shielding film that covers the upper surface and the side wall surface of the transfer electrode array is completely isolated from the light-guiding film that exhibits oxidation during film formation by the passivation layer for preventing oxidation. Therefore, since it is easy to oxidize in spite of having a large extinction coefficient, a material that could not be conventionally used as a light shielding film material can be used, and the light shielding film can be greatly thinned.

  Embodiments of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing a main part of a solid-state image sensor 10 according to a first embodiment of the present invention, and FIG. 2 is a main part of a solid-state image sensor 10 ′ according to a second embodiment of the present invention. It is typical sectional drawing which showed the part. First, a configuration common to the solid-state imaging devices 10 and 10 'will be described. The solid-state imaging devices 10 and 10 ′ are charge coupled devices (CCDs), and a photoelectric conversion unit array including a plurality of photoelectric conversion units and a transfer electrode array including a plurality of transfer electrodes are arranged in parallel on a semiconductor substrate. . The extending direction of the photoelectric conversion unit row and the transfer electrode row is a direction perpendicular to the drawing sheet. An upper surface and a side wall surface of the transfer electrode array 14 are covered with a ruthenium (Ru) light shielding film 16, and an opening 18 corresponding to the photoelectric conversion unit 12 is formed in the light shielding film 16. The light shielding film 16 may be made of a material other than Ru. The upper surface and the side wall surface of the transfer electrode row 14 are insulated from the light shielding film 16 by the interlayer insulating film 20, and the lower surface of the transfer electrode row 14 is insulated from the lower charge transfer path 24 by another insulating film 22. . Further, a first light guide film 26 is formed on the photoelectric conversion unit 12 and the light shielding film 16, and the first light guide film 26 is formed on the first light guide film 26. A second light guide film 28 having a different refractive index is formed. A color filter layer 30 is formed on the second light guide film, and an on-chip lens 32 is further formed thereon.

  The first and second light-guiding films 26 and 28 are made of borophosphosilicate glass (BPSG), and are refracted at the interface between the two by changing the refractive index by changing the composition of the two. An action is imparted, thereby constituting a lens. The material of the light guide film is not limited to BPSG, and for example, phosphosilicate glass (PSG), arsenic glass (AsSG), tetraethyl orthosilicate (TEOS) + ozone, or the like may be used. The light guide film made of these materials exhibits oxidizing properties when formed, and particularly exhibits strong oxidizing properties in a heating reflow process included in the film forming process. For this reason, if the light guide film made of these materials is directly formed on the light shielding film 16 made of a material that easily oxidizes, such as Ru, the light shielding performance of the light shielding film 16 may be significantly impaired.

  Therefore, in the solid-state imaging device 10 of FIG. 1, an oxidation passivation layer 34 is formed between the light shielding film 16 made of Ru and the first light guide film 26 made of BPSG. The passivation layer 34 is preferably formed as a transparent film with visible light using, for example, SiN, SiC, or a material not containing oxygen such as SiCN. According to this configuration, the light shielding film 16 is completely isolated from the first light guide film 26 by the passivation layer 34. Therefore, the first light guide film 26 has a strong oxidation property when formed. Even if it presents, the light shielding performance of the light shielding film 16 is not impaired thereby.

  On the other hand, in the solid-state imaging device 10 ′ in FIG. 2, the surface of the portion of the light shielding film 16 that covers the upper surface of the transfer electrode row 14 and the region above the sidewall surface of the transfer electrode row 14 of the light shielding film 16. The surface of the portion covering the surface is covered with a hard mask 38, and this hard mask 38 is used when the opening 18 of the light shielding film 16 corresponding to the photoelectric conversion unit 12 is formed in the light shielding film 16 by anisotropic etching. Formed as an etching mask. As the material of the hard mask 38, for example, SiN, SiC, SiCN, or the like is used, and other materials are also used. Further, the material removal region of the light shielding film material layer by anisotropic etching using the hard mask 38 extends to below the lower end portion of the hard mask 38 that covers the surface of the light shielding film material layer on the side wall surface of the transfer electrode array 14. It has been spread. This is expanded by over-etching when performing anisotropic etching. As is apparent from the figure, the surface of the light shielding film 16 is not covered with the hard mask 38 below the lower end portion of the hard mask 38, so that when the first light guide film 26 is formed as it is, There is a possibility that the light shielding performance of the partial light shielding film 16 may be impaired. Therefore, the passivation layer 36 for preventing oxidation is also formed in the solid-state imaging device 10 ′ of FIG. 2, and this passivation layer 36 is formed on the surface of the portion of the light shielding film 16 that is not covered with the hard mask 38 and the first surface. 1 between the light guide films 26 and between the surface of the hard mask 38 and the first light guide film 26. Similar to the passivation layer 34 of FIG. 1, the passivation layer 36 of FIG. 2 is preferably formed as a transparent film with visible light using, for example, a material that does not contain oxygen, such as SiN, SiC, and SiCN. According to this configuration, the light shielding film 16 is completely isolated from the first light guide film 26 by the hard mask 38 and the passivation layer 36, and therefore, the first light guide film 26 is formed when the film is formed. Even if it exhibits strong oxidizability, the light shielding performance of the light shielding film 16 is not impaired thereby. The solid-state imaging devices 10 and 10 'include various components necessary for functioning as a solid-state imaging device in addition to the components described above. Since it is sufficient not to be unique to the above but to have a conventional structure, description thereof will be omitted.

  As is apparent from the above description, the solid-state imaging device according to the present invention prevents the light-shielding performance of the light-shielding film from being impaired by the light-guiding film that exhibits oxidizing properties during film formation. Therefore, the present invention is always effective as long as the material of the light shielding film may be oxidized. For example, although metal materials such as Al, W, and Mo are not as easily oxidized as Ru, the light-shielding film formed of these materials also has a problem of deterioration of light-shielding performance due to oxidation after further thinning. There is a possibility of coming. Therefore, in general, the present invention can be effective when used in a solid-state imaging device in which a light shielding film is formed of a metal material. However, according to the present invention, materials such as Ru and Ir, which have a large extinction coefficient but are easy to oxidize, could not be used as a light shielding film material so far. Since the film can be greatly thinned, it can be said that the effect of the present invention is particularly remarkable when the light shielding film material is Ru or Ir.

Digital still camera or a video camera, or such as a camera having those both functions state, and are intended to provide a variety of cameras, the camera is a camera using a solid-state imaging device . Camera itself using a solid-state imaging device is conventionally known, therefore, those skilled in the art, given the information about the solid-state imaging device, can be based on that information, to easily manufacture a camera .

  3A to H are schematic diagrams illustrating main processes of the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention, and FIGS. 4A to 4H are solid-state images according to the second embodiment of the present invention. It is the schematic diagram which showed the main processes of the manufacturing method of an image pick-up element. Of the various processes constituting the method for manufacturing a solid-state imaging device according to the present invention, processes other than those shown in these drawings are not processes unique to the present invention, and these processes may follow conventional methods. Therefore, the description about them is abbreviate | omitted.

  A main process of the method for manufacturing the solid-state imaging device shown in FIGS. 3A to 3H is a process for manufacturing the solid-state imaging device 10 shown in FIG. As shown in FIG. 1, the height of the surface of the photoelectric conversion unit 12 on the semiconductor substrate is substantially the same level as the height of the bottom surface of the transfer electrode array 14. The side wall surface of the transfer electrode array 14 covered with the film 16 rises.

  In the process shown in FIGS. 3A to 3H, first, in order to form the light shielding film 16, ruthenium (Ru) is formed on the semiconductor substrate on which the photoelectric conversion unit row and the transfer electrode row are formed. A material layer (Ru layer) 16 is formed (FIG. 3A). The Ru layer 16 may be formed by sputtering or CVD, for example. Next, a photoresist mask 40 having an opening 42 corresponding to the photoelectric conversion unit 12 is formed on the Ru layer 16 (FIG. 3B). Next, anisotropic etching is performed on the Ru layer 16 using the photoresist mask 40 as an etching mask to form an opening 18 corresponding to the photoelectric conversion unit 12 in the Ru layer 16. Thereby, the light shielding film 16 is completed. Subsequently, ashing is performed to remove the photoresist mask 40 (FIG. 3C).

  Next, a passivation layer 34 for preventing oxidation is formed on the photoelectric conversion unit 12 and the light shielding film 16 (FIG. 3D). The passivation layer 34 may be made of a material that does not contain oxygen, such as SiN, SiC, and SiCN. Further, it is preferably formed as a transparent film with visible light. As the film formation method, for example, a sputtering method or a CVD method may be used. Next, a photoresist mask 44 having an opening 46 corresponding to the photoelectric conversion unit 12 is formed on the passivation layer 34 (FIG. 3E). Next, anisotropic etching is performed on the passivation layer 34 using the photoresist mask 44 as an etching mask to form an opening 48 corresponding to the photoelectric conversion unit 12 in the passivation layer 34 (that is, the photoelectric conversion unit 12). The passivation layer 34 on the surface of the substrate is removed). Subsequently, ashing is performed to remove the photoresist mask 44 (FIG. 3F). Thereafter, the first light guide film 26 made of BPSG or the like is formed on the passivation layer 34 (FIG. 3G). In the above, the passivation layer 34 on the surface of the photoelectric conversion unit 12 is removed by reducing the interface between the films having different refractive indexes, thereby reducing the reflection at the interface and the amount of incident light on the photoelectric conversion unit 12. However, if the reflection at the interface is small enough not to cause a problem, this step is omitted, and the first light guide film formation 26 is immediately formed from the state of FIG. 3D. (Fig. 3H).

  The main process of the method for manufacturing the solid-state imaging device illustrated in FIGS. 4A to 4H is a process for manufacturing the solid-state imaging device 10 ′ illustrated in FIG. 2. As shown in FIG. 2, the height of the surface of the photoelectric conversion unit 12 on the semiconductor substrate is substantially the same level as the height of the bottom surface of the transfer electrode array 14. The side wall surface of the transfer electrode array 14 covered with the film 16 rises.

  4A to 4H, first, in order to form the light shielding film 16, ruthenium (Ru) is formed on the semiconductor substrate on which the photoelectric conversion unit row and the transfer electrode row are formed, and the light shielding film is formed. A material layer (Ru layer) 16 is formed (FIG. 4A). The Ru layer 16 may be formed by sputtering or CVD, for example. Next, the SiN layer 50 is formed on the Ru layer 16. The SiN layer 50 is formed to form the hard mask 38, and is therefore a hard mask material layer. The SiN layer 50 may be formed by, for example, a sputtering method or a CVD method. Next, a photoresist mask 40 having an opening 42 corresponding to the photoelectric conversion portion 12 is formed (FIG. 4B).

Next, anisotropic etching is performed on the SiN layer 50 using the photoresist mask 40 as an etching mask to form an opening corresponding to the photoelectric conversion unit 12 in the SiN layer 50, thereby completing the hard mask 38. To do. Subsequently, ashing is performed to remove the photoresist mask 40. Further, anisotropic etching is performed on the Ru layer 16 using the hard mask 38 as an etching mask, and an opening 18 corresponding to the photoelectric conversion unit 12 is formed in the Ru layer 16, thereby completing the light shielding film 16. . The anisotropic etching of the Ru layer 16 is performed by applying a bias voltage to the lower electrode of the dry etching apparatus, and the etching gas may be a mixed gas such as Cl, CF ₂ , Ar, etc. preferable. The anisotropic etching of the Ru layer 16 is performed by cutting the Ru layer 16 using the hard mask 38 as an etching mask. Therefore, the shape of the opening 18 to be formed is a transfer of the shape of the hard mask 38. However, it is preferable not to stop the anisotropic etching when the shape is transferred, but to continue the anisotropic etching (that is, overetch). By doing so, even if the application of the bias voltage is continued, a sufficient etching gas is supplied below the lower end portion of the hard mask 38, so that even the Ru layer 16 in that region can be scraped and removed. . Therefore, by performing over-etching, as shown in FIG. 4C, the hard mask covering the material removal region of the Ru layer 16 by anisotropic etching covers the surface of the W layer 16 on the side wall surface of the transfer electrode array 14. It can be expanded to below the lower end portion of 38.

  Next, over the hard mask 38, the photoelectric conversion unit 12, and the light shielding film 16 exposed below the lower end portion of the hard mask 38, an antioxidant passivation layer 36 is formed on them (see FIG. FIG. 4D). The passivation layer 36 is preferably made of a material that does not contain oxygen, such as SiN, SiC, and SiCN. Further, it is preferably formed as a transparent film with visible light. As the film formation method, for example, a sputtering method or a CVD method may be used. Next, a photoresist mask 44 having an opening 46 corresponding to the photoelectric conversion portion 12 is formed on the passivation layer 36 (FIG. 4E). Next, anisotropic etching is performed on the passivation layer 34 using the photoresist mask 44 as an etching mask to form an opening 52 corresponding to the photoelectric conversion unit 12 in the passivation layer 36 (that is, the photoelectric conversion unit 12). The passivation layer 36 on the surface of the substrate is removed). In this case as well, it is preferable to expand the material removal region of the passivation layer 36 by the anisotropic etching to the outside by over-etching, thereby increasing the opening area of the photoelectric conversion unit 12 and improving the sensitivity. improves. In addition, since the diffraction of light is reduced by expanding the opening 52, the smear characteristic is also improved. Subsequently, ashing is performed to remove the photoresist mask 44 (FIG. 4F). Thereafter, a first light guide film 26 made of BPSG or the like is formed on the passivation layer 36 (FIG. 4G). Similar to the process shown in FIG. 3, the step of removing the passivation layer 36 on the surface of the photoelectric conversion unit 12 is omitted, and the process proceeds immediately from the state of FIG. It may be (FIG. 4H).

  As described above, according to the present invention, the light-shielding film 16 that covers the upper surface and the side wall surface of the transfer electrode array 14 is oxidized by the passivation layers 34 and 36 for preventing oxidation. 26 completely isolated. Therefore, since it is easy to oxidize in spite of having a large extinction coefficient, a material that could not be conventionally used as a light shielding film material can be used, and the light shielding film can be greatly thinned.

It is the typical sectional view showing the important section of the solid-state image sensing device concerning a 1st embodiment of the present invention. It is the typical sectional view showing the important section of the solid-state image sensing device concerning a 2nd embodiment of the present invention. A to H are schematic views showing main processes of the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention. A to H are schematic views showing main processes of the method for manufacturing the solid-state imaging device according to the second embodiment of the present invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Solid-state image sensor, 10 '... Solid-state image sensor, 12 ... Photoelectric conversion part, 14 ... Transfer electrode row | line | column, 16 ... Ru layer (light shielding film), 18 ... Opening of a light shielding film, 20 ... Interlayer insulating film, 22 ... Interlayer insulating film, 24 ... Charge transfer path, 26 ... First light guide film, 28 ... Second light guide film, 34 ... Passivation layer, 36 ... Passivation Layer, 38. Hard mask.

Claims (2)

Forming a photoelectric conversion unit row and a transfer electrode row on a semiconductor substrate;
Forming an insulating film covering the gate electrode ;
Forming a light shielding film material layer made of a metal material on the insulating film;
Forming a hard mask material layer on the light shielding film material layer;
A step of forming the etching mask is formed on the hard mask material layer, by etching to the hard mask material layer, the hard mask having openings corresponding to the photoelectric conversion unit,
The light shielding film material layer is etched from the opening of the hard mask, and the light shielding film material layer in the opening corresponding to the photoelectric conversion part , and the lower end of the hard mask on the side wall surface of the transfer electrode Removing a portion of the light shielding film material layer to form a light shielding film;
Forming a passivation layer for preventing oxidation on the photoelectric conversion unit , the hard mask, and the light shielding film;
Forming an etching mask on the passivation layer, etching the passivation layer, and forming an opening corresponding to the photoelectric conversion portion in the passivation layer;
On the passivation layer, a first light-guiding film having a concave surface above the photoelectric conversion portion is formed by using boron phosphosilicate glass (BPSG), phosphosilicate glass (PSG), arsenic glass (AsSG), and tetraethyl orthosilicate ( A step of forming a film using one or more selected from (TEOS) + ozone;
A second light guide property having a convex surface following the concave surface of the first light guide film on the first light guide film and having a refractive index different from that of the first light guide film. Forming a film using at least one selected from boron phosphosilicate glass (BPSG), phosphosilicate glass (PSG), arsenic glass (AsSG), and tetraethylorthosilicate (TEOS) + ozone;
A method for manufacturing a solid-state imaging device including: A semiconductor substrate;
A photoelectric conversion unit array composed of a plurality of photoelectric conversion units arranged in parallel on the semiconductor substrate, and a transfer electrode array composed of a plurality of transfer electrodes;
A light-shielding film made of a metal material covering the upper surface and the side wall surface of the transfer electrode array;
Except for the lower end of the side wall surface of the light shielding film, a hard mask that covers the light shielding film,
An anti-oxidation passivation layer covering the upper surface and the side wall surface of the hard mask, and a portion of the light shielding film that is not covered by the hard mask ;
Boron phosphorous silicate glass (BPSG), phosphosilicate glass (PSG), arsenic glass (AsSG), which is formed on the semiconductor substrate so as to cover the passivation layer and have a concave surface above the photoelectric conversion unit, and A first light-guiding film comprising at least one selected from tetraethyl orthosilicate (TEOS) + ozone;
One or more kinds selected from boron phosphosilicate glass (BPSG), phosphosilicate glass (PSG), arsenic glass (AsSG), and tetraethylorthosilicate (TEOS) + ozone formed on the first light guide film. A solid-state imaging device comprising: a second light guide film including:

Images