JP4833431B2 - Plating solution holding member for electroplating equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plating solution holding member for an electrolytic plating apparatus.
[0002]
[Prior art]
Attention has been attracted to electrolytic copper plating using an electrolytic plating apparatus as a technique for forming wiring on a semiconductor wafer, particularly as a technique for forming copper wiring on a semiconductor wafer in recent years.
[0003]
In a conventional general electroplating apparatus, a semiconductor wafer is immersed in a plating solution in a state where the plating solution is filled in the plating tank, and a film is formed by connecting a cathode to the semiconductor wafer and flowing electricity. It is like that.
[0004]
However, in order to form fine and uniform copper wiring using such a conventional apparatus, for example, it is necessary to flow a plating solution or to secure a certain distance between the cathode and the anode. For this reason, there was a tendency for the apparatus to become huge. Further, in the case of this conventional apparatus, a large amount of plating solution is required for one film formation, which is disadvantageous in achieving a reduction in the cost of the semiconductor.
[0005]
Therefore, recently, a next-generation electrolytic plating apparatus that can solve the above-mentioned problems has been proposed. As shown in FIG. 2, the new electroplating apparatus 31 includes a holder 32, a cathode 33, an anode 34, a plating solution holding member 35, and the like. The holder 32 includes an anode 34. The anode 34 has a slit for allowing the plating solution 36 to pass therethrough. A plate-like plating solution holding member 35 made of porous alumina is provided on the lower surface side of the anode 34. A flange portion 35 a is formed on the outer peripheral portion of the plating solution holding member 35, and the flange portion 35 a is supported by the lower opening portion 32 a of the holder 32 via a rubber packing 37. On the other hand, the semiconductor wafer 38 is supported in contact with the cathode 33. The upper surface of the semiconductor wafer 38 and the lower surface of the plating solution holding member 35 face each other with a slight gap.
[0006]
Accordingly, the plating solution 36 supplied into the holder 32 passes through the slit of the anode 34 and reaches the plating solution holding member 35, and then supplied to the semiconductor wafer 38 side through the pores of the plating solution holding member 35. Is done. By energizing between the anode 34 and the cathode 33 in this state, electrolytic plating is performed on the semiconductor wafer 38, and fine copper wiring is formed even in a stationary bath.
[0007]
[Problems to be solved by the invention]
However, in the case of the conventional plating solution holding member 35 having pores, the plating solution 36 was likely to leak out from the outer peripheral portion even though the packing 37 was provided. If such a liquid leakage occurs, the amount of the plating solution supplied to the semiconductor wafer 38 varies depending on the location, and there is a possibility that a copper wiring with a uniform film thickness cannot be obtained.
[0008]
For this reason, conventionally, it is necessary to attach a shielding rubber 39 for preventing leakage, which is formed separately from the plating solution holding member 35, to the outer peripheral portion of the plating solution holding member 35, leading to an increase in the number of parts. there were. Moreover, even if such a shield rubber 39 is attached, the gap with the plating solution holding member 35 cannot be completely eliminated, and thus it has been difficult to reliably prevent liquid leakage.
[0009]
The present invention has been made in view of the above problems, and its purpose is to reliably prevent liquid leakage without increasing the number of parts, and to form a plating layer having a uniform film thickness. An object of the present invention is to provide a plating solution holding member for an electrolytic plating apparatus.
[0010]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, in the invention according to claim 1, there is provided a plating solution holding member for an electroplating apparatus comprising a porous ceramic plate in which pores in an outer peripheral portion which is a supported portion are embedded , The porous ceramic plate is a conductive porous ceramic plate having a layer made of a non-conductive substance filling the pores in the outer peripheral portion, and the layer made of the non-conductive substance is a fluororesin as a thermosetting resin. Alternatively, the gist thereof is a plating solution holding member for an electroplating apparatus, which is made of an epoxy resin .
[0012]
According to a second aspect of the present invention, in the first aspect , the porous ceramic plate is a porous silicon carbide plate .
[0013]
The invention according to claim 3 resides in that in Claim 1, a layer consisting of the non-conductive material, and that the resin-impregnated layer formed by impregnating the thermosetting resin into the pores in the outer peripheral portion .
[0014]
Below, a description will be given of "action" in the present invention.
[0015]
According to the first aspect of the present invention, since the pores in the outer peripheral portion of the porous ceramic plate are filled, the passage through which the plating solution flows is cut off in the outer peripheral portion. Therefore, leakage of the plating solution from the outer peripheral portion of the plating solution holding member is reliably prevented. Therefore, the amount of plating solution supplied to the semiconductor wafer is less likely to vary depending on the location. In addition, according to the present invention, since a member for preventing leakage is not necessary, an increase in the number of parts is prevented.
[0016]
And since it is an electroconductive porous ceramic board, the said member comes to play the role of an anode substantially. Therefore, the member that is a pseudo anode becomes closer to the object to be plated, and a strong and stable electric field can be applied to the plating solution near the object to be plated.
[0017]
Further, the pores in the outer peripheral portion of the conductive porous ceramic plate are filled with a layer made of a non-conductive substance, so that the passage through which the plating solution flows is cut off. And since the said layer consists of a nonelectroconductive substance, even if it provides this, the precipitation behavior of plating will not be influenced in particular. Since the layer made of a non-conductive substance is made of resin, it is a material that is relatively easy to form and relatively inexpensive. In addition, since it is a thermosetting resin, it is resistant to heat, and even if plating is performed under heating, peeling or the like hardly occurs.
[0018]
According to the invention described in claim 2 , since it is a plating solution holding member using porous silicon carbide having excellent corrosion resistance, the member is not easily corroded by the plating solution, and the elution of impurities into the plating solution is prevented. Is done. This avoids deterioration of the composition of the plating solution and stabilizes the deposition behavior of the plating. Moreover, since porous silicon carbide is excellent also in electrical conductivity, it is suitable as a pseudo anode.
[0020]
According to the third aspect of the present invention, the pores can be filled easily and reliably by impregnating the pores in the outer peripheral portion with the thermosetting resin. Moreover, as a result of the pores providing a suitable anchor effect, the resin-impregnated layer is hardly peeled off from the outer peripheral portion.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an electrolytic copper plating apparatus 1 according to an embodiment of the present invention will be described in detail with reference to FIG.
[0023]
The cathode 2 constituting the electrolytic copper plating apparatus 1 is an annular member whose diameter increases toward the upper end side, and a flange 3 is formed on the lower end side thereof. The cathode 2 is formed using, for example, a conductive metal material. The diameter of the lower end side opening 4 of the cathode 2 is set to be slightly smaller than the diameter of a semiconductor wafer (for example, a silicon wafer) 5 that is an object to be plated. The semiconductor wafer 5 is pressed against the flange 3 from below by a stage (not shown). As a result, the outer peripheral portion of the upper surface side of the semiconductor wafer 5 is in close contact with the lower surface side of the flange 3, and the semiconductor wafer 5 is held in this state. At this time, since the cathode 2 has a so-called bottomed shape, the electrolytic copper plating solution 15 is accumulated in a region formed on the upper surface side of the semiconductor wafer 5.
[0024]
On the other hand, the holder 12 which comprises this electrolytic copper plating apparatus 1 is arrange | positioned in the state which adjoined above the cathode 2 at the time of use. An opening 13 is provided on the lower end side of the holder 12, and a plate-like anode 14 is attached in the vicinity of the opening 13. The anode 14 is formed in a circular shape using, for example, a conductive metal material. Slits 16 are provided at a plurality of locations of the anode 14 as a structure for allowing the copper plating solution 15 to pass from the upper surface side to the lower surface side. On the upper surface of the holder 12, a plating solution supply pipe 17 and a plating solution recovery pipe 18 are provided. The plating solution supply pipe 17 communicates between a space 19 defined by the holder 12 and the anode 14 and a plating solution tank (not shown). When the copper plating solution 15 is insufficient, the copper plating solution 15 is replenished into the space 19 through the plating solution supply pipe 17. The plating solution recovery pipe 18 plays a role of recovering the surplus when the amount of the copper plating solution 15 in the space 19 exceeds a certain amount. The recovered copper plating solution 15 is returned to the plating solution tank and reused.
[0025]
A plating solution holding plate 21 as a plating solution holding member is provided in the opening 13 of the holder 12 so as to be in contact with the lower surface side of the anode 14. The plating solution holding plate 21 has substantially the same size and the same shape (that is, a disc shape) as the anode 14. The plating solution holding plate 21 includes a flange portion 21a that protrudes laterally from the outer peripheral portion. The flange portion 21 a is supported by a support portion 13 a provided in the opening 13 of the holder 12. A rubber annular packing 22 as a seal member is interposed between the lower surface of the flange portion 21a and the upper surface of the support portion 13a.
[0026]
The plating solution holding plate 21 also serves to prevent the copper plating solution 15 from flowing out from the lower surface side when the holder 12 is transferred by holding the copper plating solution 15 in its pores. Note that the lower surface of the plating solution holding plate 21 is opposed to the upper surface of the semiconductor wafer 5 with a slight gap therebetween. Specifically, in the present embodiment, the size of the gap is set to about 1 mm.
[0027]
Next, the material of the plating solution holding plate 21 used in this embodiment will be described in detail.
The plating solution holding plate 21 of the present embodiment is a porous ceramic plate, and specifically, a porous silicon carbide plate (porous SiC plate) P1 is used. The reason why porous silicon carbide is selected is that porous silicon carbide is superior in corrosion resistance and electrical conductivity as compared with porous alumina, and is extremely convenient as a material for the plating solution holding plate 21.
[0028]
The porosity of the plating solution holding plate 21 is preferably 20% to 50%, and more preferably 30% to 45%. The average pore diameter is preferably 10 μm to 60 μm, and more preferably 20 μm to 50 μm.
[0029]
If the porosity is less than 20%, the copper plating solution 15 becomes difficult to flow smoothly due to an increase in pressure loss, and the ease of the copper plating solution 15 leaching varies from place to place. That is, the amount of the copper plating solution 15 supplied from the lower surface side of the plating solution holding plate 21 becomes non-uniform, and as a result, the film thickness of the copper plating layer may become non-uniform. Conversely, if the porosity exceeds 50%, an increase in pressure loss can be avoided, but the property of holding the copper plating solution 15 is impaired. Therefore, even in this case, the thickness of the plating layer may be nonuniform.
[0030]
If the average pore diameter is less than 10 μm, the copper plating solution 15 becomes difficult to flow smoothly due to an increase in pressure loss, so that the ease with which the copper plating solution 15 exudes varies depending on the location. That is, the amount of the plating solution 15 supplied from the lower surface side of the plating solution holding plate 21 becomes non-uniform, and as a result, the film thickness of the copper plating layer may become non-uniform. Conversely, when the average pore diameter exceeds 60 μm, an increase in pressure loss can be avoided, but the property of holding the copper plating solution 15 is impaired. Therefore, even in this case, the film thickness of the copper plating layer may be non-uniform.
[0031]
The volume resistivity of the plating solution holding plate 21 is preferably 10 ¹ Ωm to 10 ⁵ Ωm, and more preferably 10 ² Ωm to 10 ⁴ Ωm.
If it is intended to realize a material having a volume resistivity of less than 10 ¹ Ωm, it becomes difficult to select materials and set firing conditions, and the manufacturing cost of the plating solution holding plate 21 may increase. In addition, the porosity of the plating solution holding plate 21 may be impaired, and the basic performance of plating solution holding property may be impaired. On the other hand, if it exceeds 10 ⁵ Ωm, the electrical conductivity becomes too low, and the plating solution holding plate 21 may not substantially function as the anode 14. Therefore, there is a possibility that a strong and stable electric field cannot be applied to the copper plating solution 15 near the upper surface of the semiconductor wafer 5.
[0032]
The density of the plating solution holding plate 21 is 1.6 g / cm ^{3 to} 2.5 g / cm ³ , the bending strength is 30 MPa to 150 MPa, the Young's modulus is 50 GPa to 200 GPa, and the thermal conductivity is 50 W / m · K to 150 W / It may be m · K. Further, as the porous silicon carbide constituting the plating solution holding plate 21, high purity porous silicon carbide is preferably used. Specifically, porous silicon carbide having a concentration of heavy metal as an impurity of 0.5% or less is preferably used.
[0033]
In the present embodiment, a shield rubber for preventing the copper plating solution 15 from exuding from the part is not provided on the outer peripheral part of the porous silicon carbide plate P1. Instead, a layer made of a non-conductive substance is formed on the outer peripheral portion of the porous silicon carbide plate P1 including the flange portion 21a. More specifically, a resin-impregnated layer 23 (shown by fine oblique lines in FIG. 1) having a predetermined thickness is formed by impregnating pores in the outer peripheral portion with a thermosetting resin. As a result, the pores in the outer peripheral portion of the plating solution holding plate 21 are filled, and the portion has a so-called dense portion.
[0034]
Examples of the thermosetting resin used for impregnation include fluorine resins such as Teflon, epoxy resins, and polyimide resins. In this case, it is preferable to use a thermosetting resin having a metal impurity concentration as low as possible.
[0035]
Here, a method for manufacturing the plating solution holding plate 21 of the present embodiment will be described. First, one or more silicon carbide powders as raw materials are prepared. And after mix | blending a solvent, a binder, etc. with silicon carbide powder, this is mixed well. The mixture is then dried and then the dried mixture is granulated. And it shape | molds using the granule obtained by the said granulation process as a material, and produces a disk-shaped molded object. In this case, it is preferable to set the conditions so that the density distribution at the time of molding falls within the range of ± 0.05 g / cm ³ . In the present embodiment, a hydrostatic press is adopted as a pressing method for realizing this. Next, the molded body obtained by the molding process is fired at normal pressure at a temperature of about 2000 ° C. to 2300 ° C. in an inert atmosphere to sinter the molded body (ie, porous silicon carbide). A plate P1) is obtained. In this case, it is preferable to set conditions so that the in-plane temperature distribution of the molded body during firing is within ± 1 ° C. Next, the resin-impregnated layer 23 is formed by impregnating the outer peripheral portion of the porous silicon carbide plate P1 with the resin and then heat-curing the resin.
[0036]
Next, a method of using the electrolytic copper plating apparatus 1 using the plating solution holding plate 21 configured as described above will be described.
In the case of the electrolytic copper plating apparatus 1, a certain amount of the copper plating solution 15 supplied through the plating solution supply pipe 17 is accumulated in the space 19. The copper plating solution 15 supplied to the space 19 passes through the slit 16 of the anode 14 and reaches the plating solution holding plate 21. The copper plating solution 15 is further supplied to the upper surface side of the semiconductor wafer 5 through the pores of the plating solution holding plate 21. Therefore, by conducting current between the anode 14 and the cathode 2 in this state, electrolytic copper plating is performed while still bathing. Then, a copper plating layer is deposited so as to fill a wiring groove dug in advance on the upper surface side of the semiconductor wafer 5, and as a result, a copper wiring having a desired pattern shape is formed.
[0037]
However, pores in the outer peripheral portion of the plating solution holding plate 21 are filled with the resin impregnated layer 23. For this reason, the passage through which the copper plating solution 15 flows is cut off at the outer peripheral portion. Therefore, leakage of the copper plating solution 15 from the outer peripheral portion of the plating solution holding plate 21 is reliably prevented.
[0038]
【Example】
[Example 1]
In the production of Example 1, GC # 240 (manufactured by Shinano Denki Co., Ltd., average particle size 57 μm) and GMF-15H2 (manufactured by Taiheiyo Random Co., Ltd., average particle size 0.5 μm) were used as the raw material silicon carbide powder in a weight ratio. Was 7: 3. Then, these two types of silicon carbide powders were further mixed with water and an acrylic resin as a binder, which were mixed well using a pot mill. The uniform mixture obtained by the mixing step was dried for a predetermined time to remove water to some extent, and then an appropriate amount of the dried mixture was collected and granulated with a spray dryer.
[0039]
And the granule obtained by the said granulation process was used as a material, and the hydrostatic pressure press was performed by the pressure of about 100 MPa-130 MPa, and the disk-shaped molded object was produced. Next, the molded body obtained by the molding step was fired at normal pressure at a temperature of 2100 ° C. to 2200 ° C. in an argon atmosphere. The resin-impregnated layer 23 was formed by impregnating the resin into the outer peripheral portion of the porous silicon carbide plate P1 obtained by firing and then curing the resin by heating. Here, a fluororesin (manufactured by DuPont, trade name Teflon) was used as the thermosetting resin, and the heating temperature was set to 400 ° C. and the heating time was set to 5 minutes. As a result, a disk-shaped plating solution holding plate 21 made of porous silicon carbide was obtained.
[0040]
The unimpregnated region in the plating solution holding plate 21 of Example 1 has a porosity of about 25%, an average pore diameter of about 15 μm, a volume resistivity of 10 ³ Ωm, a density of 2.4 g / cm ³ , and a bending strength of It was 130 MPa, the thermal conductivity was 140 W / m · K, and the heavy metal concentration was 0.5% or less. On the other hand, the impregnation region was dense with a porosity of about 0% and an average pore diameter of 0 μm.
[0041]
And when electrolytic copper plating was implemented using such a plating solution holding | maintenance plate 21, the leakage of the copper plating solution 15 from the outer peripheral part was not recognized especially. For this reason, it was possible to form a copper wiring with a uniform film thickness on the semiconductor wafer 5 without the plating solution supply amount varying depending on the location.
[Example 2]
In the production of Example 2, GC # 240 (manufactured by Shinano Denki Co., Ltd., average particle size 57 μm) and GMF-15H2 (manufactured by Taiheiyo Random Co., Ltd., average particle size 0.5 μm) are used as raw material silicon carbide powder in a weight ratio. Was 9: 1. And these two types of silicon carbide powders were further mixed with water and an acrylic resin as a binder, and granulated at the same time while thoroughly mixing them using a universal mixer.
[0042]
And the granule obtained by the said mixing and granulation process was used as a material, and the hydrostatic pressure press was performed by the pressure of about 50 MPa, and the disk-shaped molded object was produced. Next, the molded body obtained by the molding step was fired at normal pressure at a temperature of 2250 ° C. in an argon atmosphere. The resin-impregnated layer 23 was formed by impregnating the resin into the outer peripheral portion of the porous silicon carbide plate P1 obtained by firing and then curing the resin by heating. Here, an epoxy resin (trade name EP-160, manufactured by Cemedine Co., Ltd.) was used as the thermosetting resin, and the heating temperature was set to 150 ° C. and the heating time was set to 60 minutes. As a result, a disk-shaped plating solution holding plate 21 made of porous silicon carbide was obtained.
[0043]
The unimpregnated region in the plating solution holding plate 21 of Example 2 has a porosity of about 40%, an average pore diameter of about 30 μm, a volume resistivity of 10 ³ Ωm, a density of 1.9 g / cm ³ , and a bending strength of The pressure was 50 MPa, the thermal conductivity was 80 W / m · K, and the heavy metal concentration was 0.5% or less. On the other hand, the impregnation region was dense with a porosity of about 0% and an average pore diameter of 0 μm.
[0044]
And when electrolytic copper plating was implemented using such a plating solution holding | maintenance plate 21, the leakage of the copper plating solution 15 from an outer peripheral part was not especially recognized like Example 1. FIG. For this reason, it was possible to form a copper wiring with a uniform film thickness on the semiconductor wafer 5 without the plating solution supply amount varying depending on the location.
[0045]
Therefore, according to the present embodiment, the following effects can be obtained.
(1) According to the present embodiment, the pores in the outer peripheral portion of the porous silicon carbide plate P1 are filled, and the portion is dense. For this reason, the passage through which the copper plating solution 15 flows is cut off at the outer peripheral portion. Therefore, leakage of the copper plating solution 15 from the outer peripheral portion of the plating solution holding plate 21 is reliably prevented. On the other hand, suitable porosity is ensured for a portion inside the outer peripheral portion. Accordingly, the supply amount of the plating solution to the semiconductor wafer 5 is less likely to vary depending on the location, and a copper plating layer (that is, copper wiring) having a uniform thickness can be formed. Moreover, according to this embodiment, since the shield rubber for preventing leakage is not necessary, an increase in the number of components can be prevented.
[0046]
(2) Since the plating solution holding plate 21 uses the porous silicon carbide plate P <b> 1 having conductivity, the member substantially serves as the anode 14. Therefore, the member as the pseudo anode 14 is brought closer to the semiconductor wafer 5, and a strong and stable electric field can be applied to the copper plating solution 15 in the vicinity of the semiconductor wafer 5.
[0047]
The pores in the outer peripheral portion of the porous silicon carbide plate P1 are filled with a resin impregnated layer 23 that is a layer made of a non-conductive substance. Therefore, the passage through which the copper plating solution 15 flows is cut off. Moreover, since the resin-impregnated layer 23 is made of a non-conductive material, even if it is provided, it does not particularly affect the deposition behavior of the plating, and does not negatively affect the uniform film thickness.
[0048]
(3) The plating solution holding plate 21 uses porous silicon carbide having excellent corrosion resistance. For this reason, the plating solution holding plate 21 is hardly eroded by the copper plating solution 15, and the elution of impurities into the copper plating solution 15 is prevented. Thereby, composition deterioration of the copper plating solution 15 is avoided, and the deposition behavior of the plating is stabilized. This contributes to uniform film thickness. Moreover, since porous silicon carbide is excellent also in electrical conductivity, it is suitable as the pseudo anode 14.
[0049]
(4) In this plating solution holding plate 21, a resin (thermosetting resin) that is a relatively simple and relatively inexpensive material is selected as a material for forming a layer made of a non-conductive substance. Yes. Therefore, manufacturing difficulty and cost increase can be avoided. Further, a layer made of a thermosetting resin is resistant to heat, and has an advantage that even if plating is performed under heating, peeling or the like hardly occurs. Therefore, the plating solution holding plate 21 is excellent in heat resistance and reliability.
[0050]
(5) In this plating solution holding plate 21, the resin-impregnated layer 23 is formed by impregnating pores in the outer peripheral portion with a thermosetting resin. Therefore, the pores can be filled easily and surely. Moreover, as a result of the pores providing a suitable anchor effect, the resin-impregnated layer 23 is hardly peeled off from the outer peripheral portion. Therefore, the plating solution holding plate 21 is excellent in durability and reliability.
[0051]
In addition, you may change embodiment of this invention as follows.
-Instead of layer formation by resin impregnation as in the embodiment, for example, layer formation by simple coating of resin (that is, layer formation by a method having a low degree of entering the inside of pores) may be performed. Moreover, the resin used for layer formation does not necessarily have thermosetting properties, and may be, for example, photocurable properties.
[0052]
The layer made of a non-conductive substance is not limited to only an organic material such as a resin. For example, the layer may be formed by CVD using a non-conductive ceramic.
In the embodiment, a dense portion made of a different material such as the resin impregnated layer 23 is formed on the outer peripheral portion of the porous ceramic plate. However, the dense portion may be the same material as the material forming the porous ceramic plate. As a specific example, silicon carbide in the outer peripheral portion of the porous silicon carbide plate P1 may be densified.
[0053]
-Since the flange part 21a is not essential, you may abbreviate | omit.
The electrolytic plating apparatus 1 of the embodiment can be used not only when performing electrolytic copper plating but also when performing electrolytic nickel plating or electrolytic gold plating, for example.
[0054]
The object to be plated is not limited to the semiconductor wafer 5 made of silicon, gallium arsenide, or the like, and may be, for example, a ceramic, metal, or plastic substrate.
[0055]
The electroplating apparatus 1 of the embodiment can be used not only for the formation of wiring, but also for the formation of external connection terminals in semiconductors such as bumps, for example. Furthermore, the electroplating apparatus 1 is not only used for forming a metal layer for the purpose of flowing electricity as in the case of the wiring, but is used for forming a metal layer that is not specifically intended for flowing electricity. It does not matter.
[0056]
The upper surface of the plating solution holding plate 21 may be disposed in a non-contact state with respect to the lower surface of the anode 14.
Next, in addition to the technical ideas described in the claims, the technical ideas grasped by the above-described embodiments are listed below together with their effects.
[0057]
(1) In any one of claims 1 to 3 , the plating solution holding member has a porosity of 20% to 50% and an average pore diameter of 10 μm to 60 μm. Therefore, according to the invention described in the technical idea 1, the plating solution can be uniformly exuded from one side of the member, and as a result, a plating layer having a uniform film thickness can be reliably formed.
[0058]
(2) In any one of claims 1 to 3 and technical idea 1, the plating solution holding member has a volume resistivity of 10 ¹ Ωm to 10 ⁵ Ωm. Therefore, according to the invention described in the technical idea 2, it is possible to reliably form a plating layer having a uniform film thickness without increasing the cost.
[0059]
【The invention's effect】
As described in detail above, according to the first to third aspects of the invention, it is possible to reliably prevent liquid leakage without increasing the number of parts, and to form a plating layer having a uniform thickness. It is possible to provide a plating holding member for an electroplating apparatus that can be used.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view of an electrolytic copper plating apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic sectional view of a conventional electrolytic copper plating apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Electrolytic copper plating apparatus as an electrolytic plating apparatus, 2 ... Cathode, 5 ... Semiconductor wafer as to-be-plated object, 12 ... Holder, 13 ... Opening part, 14 ... Anode, 15 ... Plating solution, 21 ... Plating solution holding member Plating solution holding plate as P1, porous silicon carbide plate as a porous ceramic plate, 23 ... resin impregnated layer as a layer made of a non-conductive substance.

Claims (3)

A plating solution holding member for an electrolytic plating apparatus comprising a porous ceramic plate in which pores in the outer peripheral portion which is a supported portion are embedded ,
The porous ceramic plate is a conductive porous ceramic plate having a layer made of a nonconductive material filling the pores in the outer peripheral portion,
The plating solution holding member for an electrolytic plating apparatus, wherein the layer made of the non-conductive substance is made of a fluorine resin or an epoxy resin as a thermosetting resin . The plating solution holding member for an electroplating apparatus according to claim 1, wherein the porous ceramic plate is a porous silicon carbide plate. It said layer made of non-conductive material, plating electroplating apparatus according to claim 1, characterized in that the resin-impregnated layer formed by impregnating the thermosetting resin into the pores in the outer peripheral portion Liquid holding member.

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