JP4815192B2 - Electrical connection device - Google Patents

Electrical connection device Download PDF

Info

Publication number
JP4815192B2
JP4815192B2 JP2005317073A JP2005317073A JP4815192B2 JP 4815192 B2 JP4815192 B2 JP 4815192B2 JP 2005317073 A JP2005317073 A JP 2005317073A JP 2005317073 A JP2005317073 A JP 2005317073A JP 4815192 B2 JP4815192 B2 JP 4815192B2
Authority
JP
Japan
Prior art keywords
plate member
electrical connection
probe
guide plate
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2005317073A
Other languages
Japanese (ja)
Other versions
JP2007121223A (en
Inventor
雅彦 庄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micronics Japan Co Ltd
Original Assignee
Micronics Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micronics Japan Co Ltd filed Critical Micronics Japan Co Ltd
Priority to JP2005317073A priority Critical patent/JP4815192B2/en
Publication of JP2007121223A publication Critical patent/JP2007121223A/en
Application granted granted Critical
Publication of JP4815192B2 publication Critical patent/JP4815192B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Description

本発明は、電気回路の電気的検査のために、被検査体である例えば半導体ウエハ上に形成された集積回路のような電気回路とその電気的検査を行うテスタとの電気的接続に用いられるプローブカードのような電気的接続装置に関する。   INDUSTRIAL APPLICABILITY The present invention is used for electrical connection between an electrical circuit such as an integrated circuit formed on a semiconductor wafer to be inspected and a tester performing the electrical inspection for electrical inspection of the electrical circuit. The present invention relates to an electrical connection device such as a probe card.

半導体ウエハ上に形成された集積回路のような電気回路の電気的検査を行うために、プローブカードのような電気的接続装置が用いられている。
このような電気的接続装置は、一般的に、テスタに接続された多数の電気接続部が設けられたプローブ基板と、該基板上に基端を当接させる多数のプローブとを備える。各プローブの先端が被検査体の電気回路の電極パッドに当接されることにより、被検査体とテスタとが接続され、所定の電気的検査が行われる。
An electrical connection device such as a probe card is used for electrical inspection of an electrical circuit such as an integrated circuit formed on a semiconductor wafer.
Such an electrical connection device generally includes a probe substrate provided with a large number of electrical connection portions connected to a tester, and a large number of probes that abut the base ends on the substrate. When the tip of each probe is brought into contact with the electrode pad of the electric circuit of the device under test, the device under test and the tester are connected, and a predetermined electrical test is performed.

ところで、この種の検査に、高温環境を伴うバーンインテストがあり、このような検査では、被検査体が高温下におかれることから、被検査体と、電気的接続装置との熱膨張係数の差によって、プローブの先端が被検査体の電極パッドから外れることがある。   By the way, this type of inspection includes a burn-in test accompanied by a high temperature environment. In such an inspection, the object to be inspected is placed under a high temperature, so that the coefficient of thermal expansion between the object to be inspected and the electrical connection device is low. Due to the difference, the tip of the probe may be detached from the electrode pad of the device under test.

この熱膨張係数の差によるプローブ先端のずれを防止するために、各プローブの先端部を支持する支持機構部を被検査体の熱膨張係数とほぼ同じ材料で構成することが提案された(特許文献1参照)。これによれば、多数のプローブの先端近傍は、基板の一方の面の側で、被検査体の熱膨張係数とほぼ同じ材料から成るリング状部材で支持される。このリング状部材は、前記基板の他方の面で該基板に結合された桟体に、前記リング状部材の周方向に間隔をおいた位置でそれぞれ結合されており、前記桟体を介して前記基板に支持されている。   In order to prevent the probe tip from being displaced due to this difference in thermal expansion coefficient, it has been proposed that the support mechanism for supporting the tip of each probe is made of the same material as the thermal expansion coefficient of the device under test (patent) Reference 1). According to this, the vicinity of the tips of a large number of probes is supported by a ring-shaped member made of substantially the same material as the thermal expansion coefficient of the device under test on the one surface side of the substrate. The ring-shaped members are respectively coupled to a crosspiece coupled to the substrate on the other surface of the substrate at positions spaced in the circumferential direction of the ring-shaped member, Supported by the substrate.

この桟体は、前記リング状部材と同質の材料で構成されているとはいえ、前記基板のリング状部材が配置された側と反対側あるいは熱源から見てリング状部材の背面側に配置されていることから、該リング状部材とは比較的大きな温度差が生じ、そのために桟体とリング状部材との間には比較的大きな伸縮差が生じる。その結果、この桟体との熱収縮差により、該桟体に周方向へ間隔をおいて結合された前記リング状部材の、被検査体に対応した温度変化に伴う自由な伸縮が妨げられることから、プローブ先端のずれを確実に防止することはできない。
また、前記リング状部材を確実に保持するために、該リング状部材を前記桟体に結合するための多数の締結部品510をリング状部材の周方向に配列する必要があることから、構成が複雑化する。
Although this crosspiece is made of the same material as the ring-shaped member, it is disposed on the opposite side of the substrate where the ring-shaped member is disposed or on the back side of the ring-shaped member as viewed from the heat source. Therefore, a relatively large temperature difference occurs with the ring-shaped member, and therefore a relatively large expansion / contraction difference occurs between the crosspiece and the ring-shaped member. As a result, due to the difference in thermal shrinkage with this crosspiece, free expansion and contraction of the ring-shaped member coupled to the crosspiece at a circumferential interval with the temperature change corresponding to the object to be inspected is prevented. Therefore, the displacement of the probe tip cannot be reliably prevented.
Further, in order to securely hold the ring-shaped member, it is necessary to arrange a large number of fastening parts 510 for connecting the ring-shaped member to the crosspiece in the circumferential direction of the ring-shaped member. To be complicated.

また、被検査体の被接触部の配列ピッチが異なる場合に適用し得るプローブユニットとして、プローブにコイルばねを組み込むことが提案されている(特許文献2参照)。しかしながら、単に、このようなプローブを用いたのみでは、被検査体の温度変化によるプローブ先端のずれを確実に防止することはできない。   In addition, as a probe unit that can be applied when the arrangement pitch of the contacted parts of the object to be inspected is different, it has been proposed to incorporate a coil spring in the probe (see Patent Document 2). However, simply using such a probe cannot reliably prevent the displacement of the probe tip due to a temperature change of the object to be inspected.

特開平11−83901号公報Japanese Patent Laid-Open No. 11-83901 特開平6−201725号公報JP-A-6-201725

したがって、本発明の目的は、構成が比較的単純であり、被検査体の温度変化による熱膨張および熱収縮によっても各プローブの先端の所定位置からのずれを確実に防止し得る電気的接続装置を提供することにある。   Therefore, an object of the present invention is an electrical connection device that has a relatively simple structure and can reliably prevent the tip of each probe from being displaced from a predetermined position even by thermal expansion and contraction due to a temperature change of the object to be inspected. Is to provide.

本発明に係る電気的接続装置は、テスタに接続される配線路が設けられ、該配線路を経て前記テスタに接続される複数の電気接続部が一方の面に形成された基板と、基端がそれぞれに対応する前記電気接続部に電気的に接続され、先端が前記被検査体の電極パッドに当接される複数のプローブと、前記基板の前記一方の面に配置され、前記プローブを前記基板に保持するための保持板とを含み、該保持板は、一方の面が前記基板の前記一方の面に向き合うように該基板に沿って配置され、前記プローブの前記基端を対応する前記電気接続部に位置決める貫通孔が形成されたベース板部材と、前記貫通孔に整合し前記プローブの前記先端を対応する前記被検査体の前記電極パッドに位置決める貫通孔が形成され、前記ベース部材の他方の面に沿って配置されたガイド板部材と、前記ベース板部材と前記ガイド板部材との間に配置された中間板部材とを備える積層構造を有し、前記ガイド板部材は、セラミック板から成り、その中央部で前記ベース板部材に連結され、前記中央部を除く部分の前記ベース板部材に沿った熱伸縮が自在である。前記中間板部材には、複数のプローブを受け入れるべくその板厚方向に貫通しかつ前記中間板部材の面上で前記貫通方向とほぼ直角に伸びる複数の長溝が互いに平行に形成されており、前記ガイド板部材の前記貫通孔の案内作用により、該貫通孔を貫通する前記プローブは前記ガイド板部材の熱伸縮に伴ってたわみ変形が可能であることを特徴とする。 An electrical connection device according to the present invention is provided with a wiring path to be connected to a tester, and a base plate having a plurality of electrical connection portions connected to the tester via the wiring path formed on one surface, and a base end Are arranged on the one surface of the substrate, and a plurality of probes, the tips of which are electrically connected to the corresponding electrical connection portions and whose tips are in contact with the electrode pads of the device under test, A holding plate for holding the substrate, and the holding plate is disposed along the substrate so that one surface thereof faces the one surface of the substrate, and the base end of the probe corresponds to the one surface. A base plate member formed with a through hole for positioning in the electrical connecting portion; and a through hole for positioning the tip of the probe to the corresponding electrode pad of the object to be inspected and aligned with the through hole; Along the other side of the member It has a placed guide plate member, a laminated structure and a deployed intermediate plate member between the guide plate member and said base plate member Te, said guide plate member is made of a ceramic plate, the central The portion is connected to the base plate member at a portion, and heat expansion and contraction along the base plate member in a portion excluding the central portion is freely possible. In the intermediate plate member, a plurality of long grooves penetrating in the plate thickness direction so as to receive a plurality of probes and extending substantially perpendicular to the penetration direction on the surface of the intermediate plate member are formed in parallel to each other , According to the guide action of the through hole of the guide plate member, the probe penetrating through the through hole can be flexibly deformed with the thermal expansion and contraction of the guide plate member .

本発明に係る前記電気的接続装置では、前記プローブの前記基端は、前記ベース部材の貫通孔により、対応する前記電気接続部に確実に保持され、他方、プローブの先端は、前記ガイド板部材の貫通孔により、対応する前記電極パッドに確実に位置決められる。前記ガイド板部材は、被検査体との温度差に拘わらず該被検査体の熱伸縮量にほぼ等しい熱伸縮量を示し、しかも、このガイド板部材およびベース部材の両者は、それらの中央部でのみ相互に連結されることから、被検査体の熱伸縮量にほぼ等しい熱伸縮量を示す前記ガイド板部材の中央部を除く部分は、前記ベース部材との結合による拘束を受けることはないので、前記被検査体の熱伸縮に伴う熱膨張および熱収縮が自在である。   In the electrical connection device according to the present invention, the proximal end of the probe is securely held in the corresponding electrical connection portion by the through hole of the base member, while the distal end of the probe is the guide plate member Through the through holes, the corresponding electrode pads are surely positioned. The guide plate member exhibits a thermal expansion / contraction amount substantially equal to the thermal expansion / contraction amount of the object to be inspected regardless of a temperature difference with the object to be inspected, and both the guide plate member and the base member have a central portion thereof. In other words, the portions other than the central portion of the guide plate member exhibiting a thermal expansion / contraction amount substantially equal to the thermal expansion / contraction amount of the object to be inspected are not restricted by the coupling with the base member. Therefore, the thermal expansion and contraction associated with the thermal expansion and contraction of the inspection object can be freely performed.

このガイド板の中央部を除く領域は被検査体の熱伸縮に応じた伸縮が自在であることから、前記中央部を除く領域に前記した各プローブの案内作用をなす貫通孔を形成することにより、前記ガイド板部材と被検査体との温度差の有無に拘わらず、熱の影響による前記電極パッドからの各プローブ先端のずれを確実に防止することができる。また、前記ベース部材およびガイド板部材の結合に多数の締結手段を用いることなく単一の締結手段を用いて両者を中央部で結合することができるので、その結合構造の簡素化が図られることから、比較的単純な構成によって、対応する電極パッドとテスタとの確実な電気的接続を得ることができる。   Since the region excluding the central portion of the guide plate can freely expand and contract in accordance with the thermal expansion and contraction of the object to be inspected, by forming a through hole that performs the guiding action of each probe described above in the region excluding the central portion. Regardless of the presence or absence of a temperature difference between the guide plate member and the object to be inspected, it is possible to reliably prevent the tip end of each probe from the electrode pad due to the influence of heat. In addition, since the base member and the guide plate member can be coupled to each other at the central portion using a single fastening means without using multiple fastening means, the coupling structure can be simplified. Thus, a reliable electrical connection between the corresponding electrode pad and the tester can be obtained with a relatively simple configuration.

前記被検査体は半導体ウエハであるとき、前記ガイド板部材は半導体ウエハの熱膨張係数に近似する熱膨張係数を有するセラミック板で構成することができる。   When the object to be inspected is a semiconductor wafer, the guide plate member can be formed of a ceramic plate having a thermal expansion coefficient that approximates the thermal expansion coefficient of the semiconductor wafer.

前記ベース板部材、中間板部材および前記ガイド板部材はセラミック板で構成し、少なくとも前記ガイド板部材を前記半導体ウエハの熱膨張係数に近似する熱膨張係数を有するセラミック板とすることができる。保持板をこのようなセラミック板の多層構造とすることにより、各セラミック板の板厚の低減を図ることにより、それぞれに設けられるプローバのための貫通孔の穴開け加工を容易とすることにより、その加工費の低減が可能となる。また、保持板を多層構造とすることにより、保持板の両面における温度差に起因する保持板自体の全体的な反りを抑制することが可能となる。
The base plate member, the intermediate plate member, and the guide plate member may be ceramic plates, and at least the guide plate member may be a ceramic plate having a thermal expansion coefficient that approximates the thermal expansion coefficient of the semiconductor wafer. By making the holding plate into a multilayer structure of such ceramic plates, by reducing the thickness of each ceramic plate, by facilitating the drilling of the through hole for the prober provided in each, The processing cost can be reduced. Further, by making the holding plate a multi-layer structure, it is possible to suppress the overall warpage of the holding plate itself due to a temperature difference between both sides of the holding plate.

前記中間板部材の長溝は、各プローブを受け入れる貫通孔をプローブ毎に形成することに比較して、中間板部材への加工を容易とすることから、前記したと同様に加工費を低減する上で、有利である。 The long groove of the intermediate plate member facilitates the processing of the intermediate plate member as compared with the case where a through hole for receiving each probe is formed for each probe. It is advantageous.

前記基板の他方の面に、該面に沿って支持板を配置することができ、この場合、前記ガイド板部材は、該ガイド板部材の前記中央部および前記ベース板部材を貫通するねじ部材により、前記ベース板部材と共に前記支持板に保持することができる。この支持板は、前記基板にその取付け基準面を与えることにより、該基板に反りのような変形が生じることを抑制し、この基板の変形による前記プローブの先端のばらつきを防止する。   A support plate can be disposed on the other surface of the substrate along the surface. In this case, the guide plate member is formed by a screw member that penetrates the central portion of the guide plate member and the base plate member. , And can be held on the support plate together with the base plate member. By providing the mounting reference surface to the substrate, the support plate suppresses deformation such as warpage of the substrate, and prevents variations in the tip of the probe due to deformation of the substrate.

前記プローブについては、スリーブ部材と、該スリーブ部材の一端から突出するように前記スリーブ部材に摺動可能に収容される針部材と、前記スリーブ内に収容され前記針部材に突出方向への偏倚力を与えるばね部材とで各プローブを構成し、前記針部材を前記スリーブ部材に揺動可能に嵌合することができる。このような組立体で各プローブを構成することにより、前記ガイド板部材の温度変化に応じた各プローブの比較的自由なたわみ変形が容易となり、また各プローブの基端を受ける前記電気接続部が形成された前記基板および各プローブ等の各加工公差に拘わらず、各プローブの基端を確実に前記電気接続部に当接させかつ先端を前記被検査体の前記電極パッドに確実に接触させることができる。
プローブとして、たわみ変形可能の単一の針部材を用いることができるが、各プローブと基板の電気接続部とのより確実な電気的接続を可能とする上で、前記したように、ばね部材を組み込んだプローブ組立体とすることが望ましい。
As for the probe, a sleeve member, a needle member slidably received in the sleeve member so as to protrude from one end of the sleeve member, and a biasing force in the protrusion direction received in the sleeve member. Each probe can be configured with a spring member that provides the needle member, and the needle member can be swingably fitted to the sleeve member. By constituting each probe with such an assembly, it becomes easier for the probe to relatively flexibly deform in response to a temperature change of the guide plate member, and the electrical connection portion that receives the base end of each probe is provided. Regardless of the processing tolerances of the formed substrate and each probe, the base end of each probe is surely brought into contact with the electrical connection portion, and the tip is reliably brought into contact with the electrode pad of the object to be inspected. Can do.
A single needle member that can be flexibly deformed can be used as the probe. However, in order to enable more reliable electrical connection between each probe and the electrical connection portion of the substrate, the spring member is used as described above. It is desirable to have an integrated probe assembly.

組立体からなる前記プローブは、前記スリーブ部材が前記ベース板部材の前記貫通孔を経て他端を前記基板の前記電気接続部に当接し、また前記針部材が前記ガイド板部材の前記貫通孔を経て先端を前記被検査体の前記電極パッドに当接させるように前記保持板に組み込むことができる。前記針部材には、前記ガイド板部材の前記貫通孔の縁部に係合して前記保持板からの脱落を防止する係止部を形成することができ、これにより、組立体から成るプローブの前記保持板からの脱落を確実に防止することができる。   In the probe comprising the assembly, the sleeve member abuts the other end of the base plate member through the through hole of the base plate member and the electrical connection portion of the substrate, and the needle member passes through the through hole of the guide plate member. Then, the tip can be incorporated in the holding plate so as to abut the electrode pad of the device under test. The needle member can be formed with a locking portion that engages with an edge portion of the through hole of the guide plate member to prevent the guide plate member from falling off the holding plate. The falling off from the holding plate can be reliably prevented.

本発明によれば、前記したように、中央部でベース部材に連結されかつ被検査体の熱伸縮にほぼ等しい熱伸縮を示すガイド板部材の案内作用により、熱の影響による前記電極パッドからの各プローブ先端のずれを確実に防止することができるので、比較的単純な構成により、対応する電極パッドとテスタとの確実な電気的接続を得ることができる。   According to the present invention, as described above, the guide plate member connected to the base member at the center and exhibiting thermal expansion / contraction approximately equal to the thermal expansion / contraction of the object to be inspected causes the effect of heat from the electrode pad. Since each probe tip can be reliably prevented from shifting, a reliable electrical connection between the corresponding electrode pad and the tester can be obtained with a relatively simple configuration.

本発明に係る電気的接続装置10は、図1示されているように、例えば半導体ウエハ12に作り込まれた多数のIC回路(図示せず)の電気的検査のために、ウエハ支持台13上に載せられた半導体ウエハ12の各IC回路の接続端子である各電極パッド14をテスタ16に接続するのに用いられる。     As shown in FIG. 1, an electrical connection device 10 according to the present invention includes, for example, a wafer support 13 for electrical inspection of a large number of IC circuits (not shown) formed on a semiconductor wafer 12. It is used to connect each electrode pad 14 which is a connection terminal of each IC circuit of the semiconductor wafer 12 placed thereon to the tester 16.

電気的接続装置10は、下面18aが平坦な取付け基準面となる平板状の支持部材18と、該支持部材の取付け面18aに保持される円形平板状の配線基板20と、該配線基板に多数のプローブ22を保持する円形の保持板24とを備える。
配線基板20は、テスタ16に接続される配線路(図示せず)が形成された全体に円形のポリイミド樹脂から成る従来よく知られた回路基板であり、その下面20aには、前記配線路に接続される電気接続部26(図6参照)が半導体ウエハ12の電極パッド14に対応してマトリックス状に配列されている。
The electrical connection device 10 includes a flat plate-like support member 18 whose lower surface 18a is a flat attachment reference surface, a circular flat plate-like wiring board 20 held on the attachment surface 18a of the support member, and a large number of the wiring boards. And a circular holding plate 24 for holding the probe 22.
The wiring board 20 is a conventionally well-known circuit board made of a circular polyimide resin on the entire surface on which a wiring path (not shown) connected to the tester 16 is formed. The electrical connection portions 26 (see FIG. 6) to be connected are arranged in a matrix corresponding to the electrode pads 14 of the semiconductor wafer 12.

支持部材18は、その取付け面18aを配線基板20の上面20bに当接させて配置される例えばステンレス板からなる板状の枠部材からなる。図2に示す例では、この支持部材18は、中央のボス部28aと、該ボス部を同心的に取り巻く円形の環状部28bと、ボス部28aおよび環状部28bを連結する多数の放射状部28cとを備え、ボス部28aの中央位置には中央雌ねじ穴30aが、また該中央雌ねじ穴を取り巻いて配置される多数の雌ねじ穴30b、30cがそれぞれ支持部材18を板厚方向に貫通して形成されている。   The support member 18 is formed of a plate-like frame member made of, for example, a stainless steel plate, which is disposed with its mounting surface 18a in contact with the upper surface 20b of the wiring board 20. In the example shown in FIG. 2, the support member 18 includes a central boss portion 28a, a circular annular portion 28b concentrically surrounding the boss portion, and a plurality of radial portions 28c that connect the boss portion 28a and the annular portion 28b. A central female screw hole 30a is formed at the central position of the boss portion 28a, and a plurality of female screw holes 30b and 30c arranged around the central female screw hole are formed through the support member 18 in the plate thickness direction. Has been.

配線基板20は、図1に示したように、該配線基板を板厚方向に貫通しかつ支持部材18の放射状部28cに形成された雌ねじ穴30cに螺合する雄ねじ部材であるボルト32cの締め付けにより、従来よく知られているように、支持部材18の下面18aに、縁部で支持されている。   As shown in FIG. 1, the wiring board 20 is tightened with a bolt 32 c that is a male screw member that penetrates the wiring board in the thickness direction and is screwed into a female screw hole 30 c formed in the radial portion 28 c of the support member 18. Thus, as is well known in the art, the support member 18 is supported at the edge by the lower surface 18a.

各プローブ22を配線基板20の下面20aに形成された電気接続部26に対応させて保持する保持板24は、図示の例では、板状の各円形部材24a、24b、24cから成る積層構造を有する。各円形部材24a、24b、24cは、例えば、被検査体である半導体ウエハ12とほぼ等しい直径を有するセラミック板である。   In the illustrated example, the holding plate 24 that holds each probe 22 in correspondence with the electrical connection portion 26 formed on the lower surface 20a of the wiring board 20 has a laminated structure including plate-like circular members 24a, 24b, and 24c. Have. Each circular member 24a, 24b, 24c is, for example, a ceramic plate having a diameter that is substantially equal to that of the semiconductor wafer 12 that is a device under test.

配線基板20の下面20aに対向して配置される円形部材であるベース板部材24aには、各プローブ22の基端よりもわずかに大きな口径を有し、プローブ22の基端を対応する前記電気接続部26に位置決めるための複数の貫通孔34が図1に矢印Aで示された円形領域を拡大して示す図3に示されているように、室温では、各電気接続部26に一致するようにこれに対応して形成されている。また、ベース板部材24aには、中央雌ねじ穴30aおよび各雌ねじ穴30bに整合する貫通孔36a、36bが形成されている。   The base plate member 24a, which is a circular member disposed to face the lower surface 20a of the wiring board 20, has a diameter slightly larger than the base end of each probe 22, and the base end of the probe 22 corresponds to the corresponding electric terminal. A plurality of through-holes 34 for positioning in the connecting portions 26 coincide with each electric connecting portion 26 at room temperature, as shown in FIG. 3 showing an enlarged circular area indicated by an arrow A in FIG. It is formed corresponding to this. The base plate member 24a is formed with through holes 36a and 36b aligned with the center female screw hole 30a and the female screw holes 30b.

中間の円形板部材である中間板部材24bを介して円形板部材であるガイド板部材24cがベース板部材24aに重ね合わされている。ガイド板部材24cには、プローブ22の挿通を許す貫通孔38が、室温では、ベース板部材24aの各貫通孔34に軸線を一致させて、すなわち半導体ウエハ12の電極パッド14に一致させて形成されている。また、ガイド板部材24cには、中央雌ねじ穴30aに整合する貫通孔40aおよび各雌ねじ穴30bに軸線を一致させて該雌ねじ穴の口径よりも大きな口径を有する貫通孔40bが形成されている。   A guide plate member 24c, which is a circular plate member, is superimposed on the base plate member 24a via an intermediate plate member 24b, which is an intermediate circular plate member. In the guide plate member 24c, through holes 38 that allow the probe 22 to be inserted are formed at room temperature so that the axes coincide with the through holes 34 of the base plate member 24a, that is, match the electrode pads 14 of the semiconductor wafer 12. Has been. Further, the guide plate member 24c is formed with a through hole 40a aligned with the central female screw hole 30a and a through hole 40b having a diameter larger than that of the female screw hole with the axis aligned with each female screw hole 30b.

両板部材24aおよび24c間に配置された中間板部材24bには、その板厚方向に貫通しかつ図4に示されているように、それぞれに複数のプローブ22を遊びを以て受け入れるべく、ガイド板部材24cの面上で相互に平行に伸長する複数の長溝42が形成されている。したがって、各長溝42の上端には、ベース板部材24aに直線状に配列された複数の貫通孔34が開放し、長溝42の下端には、各貫通孔34に対応する複数の貫通孔38が開放する。この長溝42に代えて、対応する各貫通孔34および貫通孔38に対応した円形断面を有する連結穴を個々に形成することができるが、図示のとおり、長溝42とすることがセラミック板からなる中間板部材24bへの穴開け加工費の削減の点から、望ましい。   The intermediate plate member 24b disposed between the two plate members 24a and 24c penetrates in the thickness direction of the intermediate plate member 24b and receives a plurality of probes 22 with play as shown in FIG. A plurality of long grooves 42 extending in parallel with each other are formed on the surface of the member 24c. Therefore, a plurality of through holes 34 linearly arranged in the base plate member 24 a are opened at the upper end of each long groove 42, and a plurality of through holes 38 corresponding to each through hole 34 are formed at the lower end of the long groove 42. Open. Instead of the long grooves 42, connecting holes having circular cross sections corresponding to the corresponding through holes 34 and through holes 38 can be individually formed. As shown in the figure, the long grooves 42 are made of a ceramic plate. This is desirable from the viewpoint of reducing the drilling cost for the intermediate plate member 24b.

また、中間板部材24bには、図3に示すように、支持部材18の中央雌ねじ穴30aに整合する貫通孔44aが形成され、また一端が支持部材18の雌ねじ穴30bに整合しかつ他端にガイド板部材24cの貫通孔40bに整合する大口径部46を有する貫通孔44bが形成されている。   Further, as shown in FIG. 3, the intermediate plate member 24b is formed with a through hole 44a aligned with the central female screw hole 30a of the support member 18, and one end is aligned with the female screw hole 30b of the support member 18 and the other end. A through hole 44b having a large diameter portion 46 aligned with the through hole 40b of the guide plate member 24c is formed.

図示の例では、ガイド板部材24cの中間板部材24bに対向する面には、長溝42に対応する浅溝48が形成されており、該浅溝内に各貫通孔38が開放するように該貫通孔が配置されている。プローブ22の径方向外方に突出する係止部22aは、前記浅溝48内における貫通孔38の開口縁部に形成される。   In the illustrated example, a shallow groove 48 corresponding to the long groove 42 is formed on the surface of the guide plate member 24c facing the intermediate plate member 24b, and the through holes 38 are opened in the shallow groove. A through hole is disposed. A locking portion 22 a protruding outward in the radial direction of the probe 22 is formed at the opening edge of the through hole 38 in the shallow groove 48.

したがって、保持板24は、各プローブ22の係止部22aがガイド板部材24cの貫通孔38の開口縁部に係止され、プローブ22の基端がベース板部材24aの貫通孔34を貫通しかつプローブ22の先端がガイド板部材24cの貫通孔38を貫通するように、各部材24a、24b、24cが積層状態を保持すべく、支持部材18の各雌ねじ穴30a、30bに螺合する雄ねじ部材である各ボルト50a、50bにより、支持部材18に取り付けられる。   Therefore, in the holding plate 24, the locking portions 22a of the probes 22 are locked to the opening edge portions of the through holes 38 of the guide plate member 24c, and the base ends of the probes 22 pass through the through holes 34 of the base plate member 24a. In addition, the male screws that are screwed into the female screw holes 30a, 30b of the support member 18 so that the members 24a, 24b, 24c can be stacked so that the tip of the probe 22 penetrates the through hole 38 of the guide plate member 24c. It is attached to the support member 18 by the bolts 50a and 50b which are members.

すなわち、支持部材18の中央雌ねじ穴30aに螺合する中央ボルト50aは、図3に示すとおり、軸部50aaの一端に形成された頭部50abをガイド板部材24cの下面における貫通孔40aの開口縁部に当接させた状態で、軸部50aaがガイド板部材24cの貫通孔40a、中間板部材24bの貫通孔44a、ベース板部材24aの貫通孔36aおよび配線基板20を貫通するように配置され、軸部50aaが支持部材18の中央雌ねじ穴30aに螺合される。この中央ボルト50aの締め付けにより、ガイド板部材24cは、保持板24を構成する他の中間板部材24bおよびベース板部材24aと一体的に結合されると共に、これらと一体的に支持部材18に結合される。   That is, as shown in FIG. 3, the central bolt 50a screwed into the central female screw hole 30a of the support member 18 has a head 50ab formed at one end of the shaft portion 50aa as an opening of the through hole 40a on the lower surface of the guide plate member 24c. Arranged so that the shaft portion 50aa penetrates the through hole 40a of the guide plate member 24c, the through hole 44a of the intermediate plate member 24b, the through hole 36a of the base plate member 24a, and the wiring board 20 in a state of being in contact with the edge portion. Then, the shaft portion 50aa is screwed into the central female screw hole 30a of the support member 18. By tightening the central bolt 50a, the guide plate member 24c is integrally coupled to the other intermediate plate member 24b and the base plate member 24a constituting the holding plate 24, and is coupled to the support member 18 integrally therewith. Is done.

他方、支持部材18の雌ねじ穴30bに螺合する周辺ボルト50bは、軸部50baの一端に形成された頭部50bbがガイド板部材24cの貫通孔40bを貫通し、該頭部が中間板部材24bの貫通孔44bに形成された大口径部46の底部46aに当接するように、軸部50baが中間板部材24bの貫通孔44b、ベース板部材24aの貫通孔36bおよび配線基板20を貫通して配置され、この軸部50baが支持部材18の雌ねじ穴30bに螺合する。この周辺ボルト50bの締め付けにより、周辺ボルト50bの頭部50bbがガイド板部材24cの貫通孔40bを貫通することから、このガイド板部材24cが周辺ボルト50bにより拘束されることはないが、該ガイド板部材を除くベース板部材24aおよび中間板部材24bは、配線基板20と共に支持部材18に結合される。   On the other hand, the peripheral bolt 50b screwed into the female screw hole 30b of the support member 18 has a head portion 50bb formed at one end of the shaft portion 50ba passing through the through hole 40b of the guide plate member 24c, and the head portion is an intermediate plate member. The shaft portion 50ba penetrates the through hole 44b of the intermediate plate member 24b, the through hole 36b of the base plate member 24a, and the wiring board 20 so as to contact the bottom 46a of the large diameter portion 46 formed in the through hole 44b of 24b. The shaft portion 50ba is screwed into the female screw hole 30b of the support member 18. By tightening the peripheral bolt 50b, the head 50bb of the peripheral bolt 50b passes through the through hole 40b of the guide plate member 24c. Therefore, the guide plate member 24c is not restrained by the peripheral bolt 50b. The base plate member 24 a and the intermediate plate member 24 b excluding the plate member are coupled to the support member 18 together with the wiring board 20.

また、両ボルトボルト50aおよび50bの締め付けにより、室温では、保持板24に保持された各プローブ22の基端は、配線基板20の対応する電気接続部26に確実に当接され、これにより、各プローブ22は、配線基板20の前記配線路を経てテスタ16に接続される。また、図1に示すように、ガイド板部材24cの貫通孔38から突出する、すなわち保持板24から突出する各プローブ22の先端は、保持板24のガイド板部材24cの貫通孔38の案内作用により、室温では、半導体ウエハ12の対応する各電極パッド14に確実に接触させることができ、これによりテスタ16と各電極パッド14とが検査のために接続される。   Further, by tightening both the bolts 50a and 50b, at the room temperature, the base ends of the probes 22 held by the holding plate 24 are reliably brought into contact with the corresponding electrical connecting portions 26 of the wiring board 20, thereby Each probe 22 is connected to the tester 16 through the wiring path of the wiring board 20. As shown in FIG. 1, the tip of each probe 22 protruding from the through hole 38 of the guide plate member 24 c, that is, protruding from the holding plate 24, guides the through hole 38 of the guide plate member 24 c of the holding plate 24. Thus, at room temperature, the corresponding electrode pads 14 of the semiconductor wafer 12 can be reliably brought into contact with each other, whereby the tester 16 and each electrode pad 14 are connected for inspection.

なお、支持部材18の下面18aは、プローブ22の基端を受ける配線基板20の取付け基準面として作用することから、配線基板20の熱あるいはその他の原因によるたわみ変形を規制することにより、配線基板20のたわみ変形によるプローブ22の先端の高さおよび位置のばらつきを抑制する。   Since the lower surface 18a of the support member 18 acts as a mounting reference surface for the wiring board 20 that receives the proximal end of the probe 22, the wiring board 20 is regulated by restricting deformation due to heat of the wiring board 20 or other causes. Variations in the height and position of the tip of the probe 22 due to the 20 deflection deformation are suppressed.

この半導体ウエハ12の例えばバーンインテストによる熱伸縮によってプローブ22の先端が対応する電極パッド14から外れることを防止するために、中央部でベース板部材24aおよび支持部材18に結合されたガイド板部材24cには、半導体ウエハ12の熱伸縮量にほぼ等しい熱伸縮量を示すセラミック板が選択される。   In order to prevent the tip of the probe 22 from detaching from the corresponding electrode pad 14 due to thermal expansion and contraction of the semiconductor wafer 12 by, for example, a burn-in test, a guide plate member 24c coupled to the base plate member 24a and the support member 18 at the center. For this, a ceramic plate having a thermal expansion / contraction amount substantially equal to the thermal expansion / contraction amount of the semiconductor wafer 12 is selected.

例えば、半導体ウエハ12が12インチの直径を有し(半径約150mm)、熱膨張係数が2.8×10―6/℃であり、半導体ウエハ12の温度が熱源となるウエハ支持台13の温度上昇により室温(25℃)から85℃の温度変化を生じるとき、前記熱源13から離れあるいは半導体ウエハ12よりも遠い位置にあるガイド板部材24cは室温から約60℃の温度変化を生じる場合を考察する。
この半導体ウエハ12の室温から85℃の変化を生じたときの該半導体ウエハの周辺部での径方向の最大伸び量をδとすると、このδは、次式で求められる。
For example, the semiconductor wafer 12 has a diameter of 12 inches (radius of about 150 mm), a thermal expansion coefficient of 2.8 × 10 −6 / ° C., and the temperature of the semiconductor wafer 12 serves as a heat source. When a temperature change from room temperature (25 ° C.) to 85 ° C. is caused by the rise, the guide plate member 24c located away from the heat source 13 or far from the semiconductor wafer 12 is considered to generate a temperature change from room temperature to about 60 ° C. To do.
Assuming that δ is the maximum radial elongation at the periphery of the semiconductor wafer 12 when the semiconductor wafer 12 changes from room temperature to 85 ° C., δ can be obtained by the following equation.

Figure 0004815192
Figure 0004815192

この変形量δに等しい変形量δを生じるガイド板部材24cの熱膨張係数αは次式で求められる。 Thermal expansion coefficient of the guide plate member 24c resulting in equal deformation amount [delta] 1 in the deformation amount [delta] alpha is given by the following equation.

Figure 0004815192
Figure 0004815192

両式(1)および(2)から、ガイド板部材24cの熱膨張係数αが得られる。   From both equations (1) and (2), the thermal expansion coefficient α of the guide plate member 24c is obtained.

Figure 0004815192
Figure 0004815192

したがって、前記した条件では、ガイド板部材24cとして、熱膨張係数αが4.8×10―6/℃の値を示す、例えばセラミック板が選択される。このガイド板部材24cの熱膨張係数αは半導体ウエハ12の熱膨張係数(2.8×10―6/℃)と同一桁数を示すことから、これに近似する。 Therefore, for example, a ceramic plate having a thermal expansion coefficient α of 4.8 × 10 −6 / ° C. is selected as the guide plate member 24c under the above-described conditions. The thermal expansion coefficient α of the guide plate member 24c is similar to the thermal expansion coefficient of the semiconductor wafer 12 (2.8 × 10 −6 / ° C.) because it shows the same number of digits.

ベース板部材24aおよび24bにも、ガイド板部材24cと同一のセラミック材料を選択することができる。この場合、たとえガイド板部材24cが60℃に達しても、ベース板部材24aは、該ベース部材よりも加熱源側に位置する中間板部材24bおよびガイド板部材24cによって温度の上昇が抑制されること、およびセラミック板自体の熱膨張係数が比較的小さいので、前記した設計上の温度範囲にある限り、ベース板部材24aには、その貫通孔34により位置決められる各プローブ22の前記基端が配線基板20の電気接続部26からのずれを生じさせるほどの大きな熱伸縮差が、配線基板20との間に生じることは無いことから、プローブ22の前記基端が対応する電気接続部26から外れることはない。   The same ceramic material as the guide plate member 24c can be selected for the base plate members 24a and 24b. In this case, even if the guide plate member 24c reaches 60 ° C., the rise in temperature of the base plate member 24a is suppressed by the intermediate plate member 24b and the guide plate member 24c located on the heating source side with respect to the base member. In addition, since the thermal expansion coefficient of the ceramic plate itself is relatively small, the base end of each probe 22 positioned by the through hole 34 is connected to the base plate member 24a as long as it is within the above-described design temperature range. Since the thermal expansion / contraction difference that causes the displacement of the substrate 20 from the electrical connection portion 26 does not occur between the substrate 20 and the wiring substrate 20, the base end of the probe 22 is detached from the corresponding electrical connection portion 26. There is nothing.

プローブ22の前記基端部の対応する電気接続部26からのずれをより確実に防止するには、ベース板部材24aとして、配線基板20の熱膨張係数に等しい熱膨張係数を示す材料を用いることが望ましい。   In order to prevent the base end portion of the probe 22 from the corresponding electrical connection portion 26 more reliably, a material having a thermal expansion coefficient equal to the thermal expansion coefficient of the wiring board 20 is used as the base plate member 24a. Is desirable.

このベース板部材24aの貫通孔34により基端が配線基板20の電気接続部26に位置決められる各プローブ22の先端は、ガイド板部材24cの貫通孔38の案内作用を受ける。このプローブ22の先端の案内作用をなすガイド板部材24cは、前記したように被検査体である半導体ウエハ12の熱膨張係数に近似した線膨張係数を有し、しかも半導体ウエハ12との温度差の有無に拘わらず、半導体ウエハ12の熱伸縮にほぼ等しい熱伸縮を示す。また、ガイド板部材24cの中央部がベース板部材24aおよび支持部材18に結合されていることから、ガイド板部材24cは、その中央部の伸縮を拘束されるが、中央部を除く貫通孔38が形成された周辺部は、半導体ウエハ12の熱伸縮に応じたガイド板部材24cの径方向および周方向への伸縮が自在である。   The distal end of each probe 22 whose proximal end is positioned at the electrical connection portion 26 of the wiring board 20 by the through hole 34 of the base plate member 24a is guided by the through hole 38 of the guide plate member 24c. As described above, the guide plate member 24c that guides the tip of the probe 22 has a linear expansion coefficient that approximates the thermal expansion coefficient of the semiconductor wafer 12 that is the object to be inspected, and a temperature difference from the semiconductor wafer 12. Regardless of whether or not there is, thermal expansion and contraction approximately equal to the thermal expansion and contraction of the semiconductor wafer 12 is exhibited. Further, since the central portion of the guide plate member 24c is coupled to the base plate member 24a and the support member 18, the guide plate member 24c is restrained from expanding and contracting at the central portion, but the through hole 38 excluding the central portion. In the peripheral portion where is formed, the guide plate member 24 c can be expanded and contracted in the radial direction and the circumferential direction in accordance with the thermal expansion and contraction of the semiconductor wafer 12.

そのため、半導体ウエハ12が例えば加熱雰囲気下でのバーンインテストを受けるとき、温度変化に伴って、その電極パッド14の位置が半導体ウエハ12の面上でずれを生じても、半導体ウエハ12に沿って該半導体ウエハの熱伸縮量にほぼ等しい熱伸縮量を示すガイド板部材24cの径方向および周方向への変形を伴う該ガイド板部材のプローブ案内作用により、プローブ22は、そのたわみ変形を伴って、先端が電極パッド14の位置のずれに追従する。その結果、プローブ22の電極パッド14からのずれが確実に防止される。
また、ベース板部材24aおよびガイド板部材24cの結合に多数の締結手段を用いることなく、単一の締結手段を構成する中央ボルト50aを用いて両者を中央部で結合することができるので、その結合構造の簡素化が図られることから、比較的単純な構成によって、対応する電極パッド14とテスタ16との確実な電気的接続を得ることができる。
For this reason, when the semiconductor wafer 12 undergoes a burn-in test in a heated atmosphere, for example, even if the position of the electrode pad 14 is shifted on the surface of the semiconductor wafer 12 along with the temperature change, the semiconductor wafer 12 moves along the semiconductor wafer 12. Due to the probe guide action of the guide plate member accompanied by deformation in the radial direction and the circumferential direction of the guide plate member 24c exhibiting a thermal expansion / contraction amount substantially equal to the thermal expansion / contraction amount of the semiconductor wafer, the probe 22 is accompanied by its deflection deformation. The tip follows the displacement of the position of the electrode pad 14. As a result, the displacement of the probe 22 from the electrode pad 14 is reliably prevented.
In addition, since both the base plate member 24a and the guide plate member 24c can be coupled at the central portion by using the central bolt 50a constituting a single fastening means without using a large number of fastening means. Since the coupling structure is simplified, a reliable electrical connection between the corresponding electrode pad 14 and the tester 16 can be obtained with a relatively simple configuration.

前記したプローブ22として、たわみ変形が可能な、例えばタングステン線のような金属線を用いることができる。また、このような単一の金属線からなるプローブ22に代えて、図5および図6に示すようなプローブ組立体122を用いることができる。   As the above-described probe 22, a metal wire such as a tungsten wire that can be flexibly deformed can be used. Further, a probe assembly 122 as shown in FIGS. 5 and 6 can be used in place of the probe 22 made of such a single metal wire.

本発明に係るプローブ組立体122は、図5に示すように、両端開放の金属筒体からなるスリーブ部材60と、該スリーブ部材の一端を閉鎖する導電性の頭部材62と、一端を頭部材62に当接させてスリーブ部材60内に収容される金属性の圧縮コイルスプリング64と、該コイルスプリングのばね力を受けるように該コイルスプリングの他端に一端を当接させ、スリーブ部材60に摺動可能に収容される導電性の針部材66とを備える。図示の例では、針部材としてプランジャー部材66が用いられている。   As shown in FIG. 5, the probe assembly 122 according to the present invention includes a sleeve member 60 made of a metal cylinder open at both ends, a conductive head member 62 that closes one end of the sleeve member, and a head member at one end. A metallic compression coil spring 64 received in contact with 62 and housed in the sleeve member 60, and one end abutted on the other end of the coil spring so as to receive the spring force of the coil spring, And a conductive needle member 66 slidably accommodated. In the illustrated example, a plunger member 66 is used as the needle member.

スリーブ部材60には、針部材であるプランジャー部材66の一端に形成された頭部66aに係合してスリーブ部材60からのプランジャー部材66の脱落を防止する減径部60aが形成されている。プランジャー部材66は、その他端をスリーブ部材60の他端から突出させて配置されており、この突出領域には、ガイド板部材24cの貫通孔38の開口縁部に係止可能な前記したと同様な係止部22aが形成されている。また、プランジャー部材66の先端には、圧縮コイルスプリング64のばね力により前記した電極パッド14に押し付けられる接触端子68が設けられている。図示の例では、接触端子68には、電極パッド14との確実な電気的接続を得るために、歯68aが形成されている。   The sleeve member 60 is formed with a reduced diameter portion 60 a that engages with a head portion 66 a formed at one end of a plunger member 66 that is a needle member and prevents the plunger member 66 from falling off the sleeve member 60. Yes. The plunger member 66 is disposed with the other end protruding from the other end of the sleeve member 60, and the protruding region can be locked to the opening edge of the through hole 38 of the guide plate member 24c. A similar locking portion 22a is formed. Further, a contact terminal 68 that is pressed against the electrode pad 14 by the spring force of the compression coil spring 64 is provided at the tip of the plunger member 66. In the illustrated example, the contact terminal 68 is formed with teeth 68 a in order to obtain a reliable electrical connection with the electrode pad 14.

プランジャー部材66は、その軸線がスリーブ部材60の軸線に関して角度θ内で揺動可能にスリーブ部材60に嵌合されており、その揺動角度θは例えば0.1度に設定されている。また、スリーブ部材60とプランジャー部材66との間には、揺動角θが1度であっても、両者の円滑な摺動が補償される。   The plunger member 66 is fitted to the sleeve member 60 so that its axis is swingable within an angle θ with respect to the axis of the sleeve member 60, and the swing angle θ is set to 0.1 degrees, for example. Further, even if the swing angle θ is 1 degree, the smooth sliding between the sleeve member 60 and the plunger member 66 is compensated.

前記プローブ組立体122は、図6(a)に示すように、頭部材62の先端が配線基板20の電気接続部26に当接するように、保持板24のベース板部材24aに形成された貫通孔34を貫通して保持板24に組み込まれる。このプローブ組立体122の保持板24への組み込み状態では、プランジャー部材66の係止部22aがガイド板部材24cの浅溝48における貫通孔38の開口縁部に当接し、プランジャー部材66の先端に設けられた前記接触端子68が半導体ウエハ12の前記電極パッド14に押圧可能となるように、プランジャー部材66が貫通孔38を貫通する。   As shown in FIG. 6A, the probe assembly 122 penetrates the base plate member 24a of the holding plate 24 so that the tip of the head member 62 abuts on the electrical connection portion 26 of the wiring board 20. The hole 34 is inserted into the holding plate 24. When the probe assembly 122 is incorporated in the holding plate 24, the locking portion 22a of the plunger member 66 contacts the opening edge of the through hole 38 in the shallow groove 48 of the guide plate member 24c. The plunger member 66 penetrates the through hole 38 so that the contact terminal 68 provided at the tip can be pressed against the electrode pad 14 of the semiconductor wafer 12.

図6(a)は常温でのプローブ組立体122の組み込み状態を示し、この常温での組み込み状態では、スリーブ部材60とプランジャー部材66との両軸線が一致するように、前記揺動角θがほぼ零となり、これにより、各プローブ組立体122の頭部材62が当接する電気接続部26と、接触端子68が当接する電極パッド14とが確実に接続される。   FIG. 6A shows the assembled state of the probe assembly 122 at room temperature. In this assembled state at room temperature, the swing angle θ is set so that both axes of the sleeve member 60 and the plunger member 66 coincide. Thus, the electrical connection portion 26 with which the head member 62 of each probe assembly 122 abuts and the electrode pad 14 with which the contact terminal 68 abuts are securely connected.

バーンインテストのために、図6(b)に示されているように、半導体ウエハ12が載せられたウエハ支持台13の温度が室温から例えば85℃に上昇すると、このウエハ支持台13上の半導体ウエハ12が85℃に上昇する。この半導体ウエハ12の温度上昇によって、図中矢印Aで示すように、半導体ウエハ12の膨張によって半導体ウエハ12が変形を生じる。このとき、本発明に係る電気的接続装置10では、プローブ22を受け入れるガイド板部材24c、すなわちプローブ組立体122のプランジャー部材66を受け入れるガイド板部材24cが60℃に昇温することにより、図中矢印Bで示すように、半導体ウエハ12の変形とほぼ同一の変形を生じる。このガイド板部材24cの案内作用により、該ガイド板部材の案内孔すなわち貫通孔38を通るプローブ組立体122は、前記角度θの揺動を伴う変形を生じ、そのプランジャー部材66の先端に形成された接触端子68は、これに対応する電極パッド14とほぼ一体的に変位する。   For the burn-in test, as shown in FIG. 6B, when the temperature of the wafer support 13 on which the semiconductor wafer 12 is placed rises from room temperature to, for example, 85 ° C., the semiconductor on the wafer support 13 The wafer 12 rises to 85 ° C. As the temperature of the semiconductor wafer 12 rises, the semiconductor wafer 12 is deformed by the expansion of the semiconductor wafer 12 as indicated by an arrow A in the figure. At this time, in the electrical connection device 10 according to the present invention, the guide plate member 24c that receives the probe 22, that is, the guide plate member 24c that receives the plunger member 66 of the probe assembly 122 is heated to 60 ° C. As indicated by the middle arrow B, the deformation almost identical to the deformation of the semiconductor wafer 12 occurs. Due to the guide action of the guide plate member 24c, the probe assembly 122 passing through the guide hole of the guide plate member, that is, the through hole 38, is deformed with the swing of the angle θ and formed at the tip of the plunger member 66. The contact terminals 68 are displaced substantially integrally with the corresponding electrode pads 14.

したがって、本発明に係る電気的接続装置10によれば、中央部でベース部材24aに連結されかつ被検査体12の熱伸縮にほぼ等しい熱伸縮を示すガイド板部材24cの案内作用により、熱の影響による電極パッド14からの各プローブ22および各プローブ組立体122の先端のずれを確実に防止することができるので、比較的単純な構成により、対応する電極パッド14とテスタ16との確実な電気的接続を得ることができる。   Therefore, according to the electrical connecting device 10 according to the present invention, the guide plate member 24c coupled to the base member 24a at the center and exhibiting thermal expansion / contraction substantially equal to the thermal expansion / contraction of the object 12 to be inspected, Since the displacement of the tips of the probes 22 and the probe assemblies 122 from the electrode pads 14 due to the influence can be surely prevented, reliable electrical connection between the corresponding electrode pads 14 and the tester 16 can be achieved with a relatively simple configuration. Connection can be obtained.

また、プローブ22としてプローブ組立体122を用いることにより、その圧縮コイルスプリング64のばね力によって、プローブ先端である接触端子68を確実に電極パッド14に接続することができる。また、揺動角θの設定により、電極パッド14の変位に応じた接触端子68の適切な変位が容易となり、プローブ先端の電極パッド14の変位への追従性を高めることができる。   Further, by using the probe assembly 122 as the probe 22, the contact terminal 68, which is the tip of the probe, can be reliably connected to the electrode pad 14 by the spring force of the compression coil spring 64. Further, by setting the swing angle θ, it is easy to appropriately displace the contact terminal 68 in accordance with the displacement of the electrode pad 14, and the followability to the displacement of the electrode pad 14 at the tip of the probe can be improved.

前記したところでは、被検査体が室温から85℃の間で温度変化を生じる場合について説明したが、この温度範囲は、必要に応じて変更することができ、その温度範囲内での温度差を考慮して、ガイド板部材24cを適宜選択することができる。
また、保持板として、3層構造の保持板24を示したが、必要に応じて、中間板部材24bを不要とすることができ、また、4層以上の多層構造とすることができる。
As described above, the case where the object to be inspected changes in temperature between room temperature and 85 ° C. has been described, but this temperature range can be changed as necessary, and the temperature difference within the temperature range can be changed. In consideration, the guide plate member 24c can be appropriately selected.
Further, although the holding plate 24 having a three-layer structure is shown as the holding plate, the intermediate plate member 24b can be omitted if necessary, and a multilayer structure having four or more layers can be formed.

本発明は、上記実施例に限定されず、その趣旨を逸脱しない限り、種々に変更することができる。   The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

本発明に係る電気的接続装置を部分的に示す断面図である。It is sectional drawing which shows partially the electrical connection apparatus which concerns on this invention. 本発明に係る電気的接続装置の全体を示す上面図である。It is a top view which shows the whole electrical connection apparatus which concerns on this invention. 図1に波線の円で囲まれた部分を拡大して示す断面図である。It is sectional drawing which expands and shows the part enclosed by the wavy circle in FIG. 図1に示した電気的接続装置の部分的な底面図である。It is a partial bottom view of the electrical connection apparatus shown in FIG. 本発明に係る電気的接続装置に用いられるプローブ組立体をその一部を破断して示す断面図である。It is sectional drawing which fractures | ruptures and shows the probe assembly used for the electrical connection apparatus which concerns on this invention. 6(a)および6(b)はそれぞれ室温下および高温下でのプローブ組立体の形状の変化を示す説明図である。6 (a) and 6 (b) are explanatory diagrams showing changes in the shape of the probe assembly at room temperature and high temperature, respectively.

符号の説明Explanation of symbols

10 電気的接続装置
12 半導体ウエハ(被検査体)
14 電極パッド
16 テスタ
20 配線基板
22、122 プローブ(プローブ組立体)
24 保持板
24a ベース板部材
24b 中間板部材
24c ガイド板部材
26 電気接続部
34、38 貫通孔
42 長溝
10 Electrical connection device 12 Semiconductor wafer (inspected object)
14 Electrode pad 16 Tester 20 Wiring board 22, 122 Probe (probe assembly)
24 holding plate 24a base plate member 24b intermediate plate member 24c guide plate member 26 electrical connecting portion 34, 38 through hole 42 long groove

Claims (6)

被検査体の電気的検査のために前記被検査体に設けられた電極パッドとテスタとを接続する電気的接続装置であって、
前記テスタに接続される配線路が設けられ、該配線路を経て前記テスタに接続される複数の電気接続部が一方の面に形成された基板と、
基端がそれぞれに対応する前記電気接続部に電気的に接続され、先端が前記被検査体の電極パッドに当接される複数のプローブと、
前記基板の前記一方の面に配置され、前記プローブを前記基板に保持するための保持板とを含み、
該保持板は、一方の面が前記基板の前記一方の面に向き合うように該基板に沿って配置され、前記プローブの前記基端を対応する前記電気接続部に位置決める貫通孔が形成されたベース板部材と、前記貫通孔に整合し前記プローブの前記先端を対応する前記被検査体の前記電極パッドに位置決める貫通孔が形成され、前記ベース部材の他方の面に沿って配置されたガイド板部材と、前記ベース板部材と前記ガイド板部材との間に配置された中間板部材とを備える積層構造を有し、
前記ガイド板部材は、セラミック板から成り、その中央部で前記ベース板部材に連結され、前記中央部を除く部分の前記ベース板部材に沿った熱伸縮が自在であり、
前記中間板部材には、複数のプローブを受け入れるべくその板厚方向に貫通しかつ前記中間板部材の面上で前記貫通方向とほぼ直角に伸びる複数の長溝が互いに平行に形成されており、
前記ガイド板部材の前記貫通孔の案内作用により、該貫通孔を貫通する前記プローブは前記ガイド板部材の熱伸縮に伴ってたわみ変形が可能であることを特徴とする、電気接続装置。
An electrical connection device for connecting an electrode pad and a tester provided on the test object for electrical inspection of the test object,
A wiring path connected to the tester is provided, and a plurality of electrical connection parts connected to the tester via the wiring path are formed on one surface;
A plurality of probes whose proximal ends are electrically connected to the corresponding electrical connection portions and whose distal ends are in contact with the electrode pads of the device under test;
A holding plate that is disposed on the one surface of the substrate and holds the probe on the substrate;
The holding plate is disposed along the substrate so that one surface thereof faces the one surface of the substrate, and a through hole is formed to position the base end of the probe in the corresponding electrical connection portion. A base plate member and a guide hole that is aligned with the through hole and that positions the tip of the probe in the corresponding electrode pad of the object to be inspected are disposed along the other surface of the base member. A laminated structure comprising a plate member and an intermediate plate member disposed between the base plate member and the guide plate member;
The guide plate member is made of a ceramic plate, and is connected to the base plate member at a central portion thereof, and is capable of thermal expansion and contraction along the base plate member except for the central portion.
In the intermediate plate member, a plurality of long grooves penetrating in the plate thickness direction so as to receive a plurality of probes and extending substantially perpendicular to the penetration direction on the surface of the intermediate plate member are formed in parallel to each other,
The electrical connection device according to claim 1, wherein the probe penetrating through the through hole can be deformed by thermal expansion and contraction of the guide plate member by the guiding action of the through hole of the guide plate member.
前記被検査体は半導体ウエハである、請求項1に記載の電気的接続装置。   The electrical connection device according to claim 1, wherein the device under test is a semiconductor wafer. 前記ベース板部材、中間板部材および前記ガイド板部材はセラミック板からなる、請求項1に記載の電気的接続装置。   The electrical connection device according to claim 1, wherein the base plate member, the intermediate plate member, and the guide plate member are made of a ceramic plate. 前記基板の他方の面には、該面に沿って支持板が配置されており、前記ガイド板部材は、該ガイド板部材の前記中央部および前記ベース板部材を貫通するねじ部材により、前記ベース板部材と共に前記支持板に保持されている、請求項1に記載の電気的接続装置。   A support plate is disposed on the other surface of the substrate along the surface, and the guide plate member is formed by the screw member penetrating the central portion of the guide plate member and the base plate member. The electrical connection device according to claim 1, wherein the electrical connection device is held on the support plate together with a plate member. 前記プローブは、スリーブ部材と、該スリーブ部材の一端から突出するように前記スリーブ部材に摺動可能に収容される針部材と、前記スリーブ内に収容され前記針部材に突出方向への偏倚力を与えるばね部材とを備え、前記針部材は前記スリーブ部材に対し揺動可能に嵌合されている、請求項1に記載の電気的接続装置。   The probe includes a sleeve member, a needle member that is slidably received in the sleeve member so as to protrude from one end of the sleeve member, and a biasing force that is received in the sleeve member in the protruding direction. The electrical connection device according to claim 1, further comprising: a spring member that provides the needle member, wherein the needle member is swingably fitted to the sleeve member. 前記プローブは、前記スリーブ部材が前記ベース板部材の前記貫通孔を経て他端を前記基板の前記電気接続部に当接し、また前記針部材が前記ガイド板部材の前記貫通孔を経て先端を前記被検査体の前記電極パッドに当接させるように前記保持板に組み込まれ、前記針部材には前記ガイド板部材の前記貫通孔の縁部に係合して前記保持板からの脱落を防止する係止部が形成されている、請求項5に記載の電気的接続装置。   In the probe, the sleeve member abuts the other end of the base plate member through the through hole of the base plate member and the electrical connection portion of the substrate, and the needle member has a tip of the guide plate member through the through hole of the tip. It is incorporated in the holding plate so as to contact the electrode pad of the object to be inspected, and the needle member is engaged with the edge of the through hole of the guide plate member to prevent the holding plate from falling off. The electrical connection device according to claim 5, wherein a locking portion is formed.
JP2005317073A 2005-10-31 2005-10-31 Electrical connection device Active JP4815192B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005317073A JP4815192B2 (en) 2005-10-31 2005-10-31 Electrical connection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005317073A JP4815192B2 (en) 2005-10-31 2005-10-31 Electrical connection device

Publications (2)

Publication Number Publication Date
JP2007121223A JP2007121223A (en) 2007-05-17
JP4815192B2 true JP4815192B2 (en) 2011-11-16

Family

ID=38145214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005317073A Active JP4815192B2 (en) 2005-10-31 2005-10-31 Electrical connection device

Country Status (1)

Country Link
JP (1) JP4815192B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5030060B2 (en) * 2007-08-01 2012-09-19 軍生 木本 Electrical signal connection device
KR100927157B1 (en) * 2009-02-26 2009-11-18 (주)기가레인 Probe block
JP6259590B2 (en) * 2013-06-12 2018-01-10 株式会社日本マイクロニクス Probe card and manufacturing method thereof
JP6209376B2 (en) * 2013-07-08 2017-10-04 株式会社日本マイクロニクス Electrical connection device
JP2015038510A (en) * 2014-11-12 2015-02-26 株式会社オプトニクス精密 Probe card

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3192270B2 (en) * 1993-05-10 2001-07-23 株式会社日立製作所 Electrode connection device
JP3394620B2 (en) * 1995-01-20 2003-04-07 株式会社日立製作所 Probe assembly and inspection device
JPH1026636A (en) * 1996-07-11 1998-01-27 Advantest Corp Probe card
JP2004205487A (en) * 2002-11-01 2004-07-22 Tokyo Electron Ltd Probe card fixing mechanism
KR101104287B1 (en) * 2004-02-27 2012-01-13 가부시키가이샤 아드반테스트 Probe card

Also Published As

Publication number Publication date
JP2007121223A (en) 2007-05-17

Similar Documents

Publication Publication Date Title
JP4704426B2 (en) Electrical connection device, method of manufacturing the same, and electrical connection device
KR100812447B1 (en) Probe card
JP5190195B2 (en) Electrical connection device
JP4745060B2 (en) Probe card
US9588139B2 (en) Probe card assembly for testing electronic devices
JP5426365B2 (en) Probe card
KR101142760B1 (en) Fixing device of probe card and electronic component testing apparatus
JP4815192B2 (en) Electrical connection device
KR20040014211A (en) Probe card
JP4842049B2 (en) Probe assembly
KR101242004B1 (en) Probe card
JP2011145279A (en) Probe card and inspection device
KR20070104531A (en) Probe card
KR100967339B1 (en) Probe card for wafer test
KR101328136B1 (en) Probe card
US7924034B2 (en) Electric connecting apparatus
JP4498829B2 (en) Card holder
KR20100089694A (en) Probe card
KR100903290B1 (en) Probe card comprising dual support frame
JPH07321168A (en) Probe card
KR100725456B1 (en) Probe card for wafer test
KR100920790B1 (en) Probe Assembly, Method of Producing the Probe Assembly, and Electrical Connection Device
JP3737886B2 (en) Probe device
KR101088733B1 (en) Probe card
KR20100045034A (en) Connector structure and substrate assembly including the connector structure

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080902

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101022

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101102

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110208

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110223

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110510

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110530

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110802

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110829

R150 Certificate of patent or registration of utility model

Ref document number: 4815192

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140902

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250