JP4812363B2 - Vacuum thin film forming equipment - Google Patents

Description

  The present invention is characterized in that the deposition shield for a vacuum thin film forming apparatus including a layer of plain woven or twill woven wire mesh, and the inner wall and / or the internal member of the thin film forming chamber are covered with the deposition shield. The present invention relates to a vacuum thin film forming apparatus.

  Examples of the vacuum thin film forming apparatus include an ion plating apparatus, a plasma CVD apparatus, a vacuum deposition apparatus, and a sputtering apparatus. These devices perform film formation when manufacturing semiconductor devices, but they are also deposited on the inner walls of vacuum chambers, deposition plates, shutters, and covers of vacuum thin film forming devices other than the desired film-forming target. Material adhesion and deposition occurs. The film deposited on the target substrate is sent to the next process after reaching a predetermined film thickness, so that the film does not peel off, but is deposited on the inner wall of the vacuum chamber, the deposition plate, the shutter or the cover ring. As the film accumulates, it becomes thicker, and when the thicker film increases, the internal stress of the film increases and the deposits peel and fall off. The adhesion of the exfoliated material and the fallen material to the film formation object causes contamination of the film formation, which has been a big problem particularly in the semiconductor device manufacturing process.

  Conventionally, surface treatment of an inner wall or an internal member (a deposition plate, a shutter, a cover ring, etc.) in a thin film forming apparatus is performed by blasting or spraying by shot blasting to increase adhesion with deposits and internal A method has been proposed that relieves stress and prevents the separation and dropping of deposits. However, these blast treatments or thermal spraying treatments could not sufficiently prevent the film from peeling off or falling off. On the other hand, after the thin film formation process is repeated a certain number of times, it is necessary to regenerate the film by artificially peeling and removing the film deposited on the inner wall or internal member of the apparatus. There is also a problem that the deposited material is difficult to peel off because the deposited material is thickly attached to the inner wall and the inner member.

Further, as a means for preventing deposits from falling off on the inner wall or inner member of the thin film forming apparatus, a plate member or a net member is overlapped (Patent Document 1), or a perforated plate such as a punching metal or an expanded metal is provided (Patent Document). 2), a metal mesh plate is provided (Patent Documents 3 and 4), a protective member made of a wire mesh is installed (Patent Document 5), etc. It has not been sufficient to suppress the peeling of the deposits on the inner wall or the inner member, and a further peeling prevention effect has been desired.
JP-A-62-220205 JP-A-3-237085 JP-A-10-317127 Japanese Patent Laid-Open No. 11-6049 JP 2001-262334 A

  The present invention has been made to solve the above-described problems of the prior art. That is, the problem to be solved by the present invention is to provide a surface that can sufficiently prevent peeling and dropping of deposits on the inner wall or inner member of the vacuum thin film forming apparatus and that can be easily regenerated and cleaned.

  As a result of intensive studies, the present inventors fixed an adhesion shield including a layer of plain woven or twill woven wire mesh on the inner wall or internal member of the thin film forming chamber in order to solve the above-mentioned problems. Thus, the inventors have found that the above object can be achieved and completed the present invention.

That is, the present invention relates to the invention shown in the following items:
Item 1. An adhesion shield for vacuum thin film forming apparatus comprising a layer of plain woven or twill woven wire mesh;
Item 2. The deposition shield for the vacuum thin film forming apparatus is a plain woven or twill woven wire mesh alone, a multilayer structure in which a flat woven wire mesh and / or a twill woven wire mesh are laminated, or a flat woven and / or twill woven wire mesh. Item 2. A protective shield for a vacuum thin film forming apparatus according to Item 1, which is a multilayer structure in which a member selected from the group consisting of a metal thin plate, expanded metal, punching metal, plain woven wire mesh and twill woven wire mesh is laminated.
Item 3. Item 3. The deposition shield for a vacuum thin film forming apparatus according to Item 1 or 2, comprising a material selected from the group consisting of stainless steel, iron, aluminum, and copper;
Item 4. A vacuum thin film forming apparatus, wherein an inner wall and / or an internal member of the thin film forming chamber is covered with the deposition shield according to any one of Items 1 to 3;
Item 5. The manufacturing method of the vacuum thin film forming apparatus including fixing the deposition shield as described in any one of Claims 1-3 to the inner wall and / or internal member of a thin film formation chamber.

  The inner wall or the inner member of the thin film forming chamber to which the deposition shield of the present invention is fixed does not cause the peeling of the vapor deposition material deposited during the production of the thin film, reduces the particles in the apparatus, and facilitates the regeneration cleaning of the member. is there.

  In this specification, the “vacuum thin film forming apparatus” refers to an apparatus for forming a thin film such as a metal film or a semiconductor film on the surface of a substrate such as a wafer. For example, an ion plating apparatus, a plasma CVD apparatus, or a vacuum deposition apparatus. Examples thereof include, but are not limited to, a sputtering apparatus and the like. Further, in this specification, the “internal member of the vacuum thin film forming apparatus” refers to equipment / parts installed in the chamber of the apparatus, such as a jig, a deposition plate, a shutter, and a cover ring. It is done.

  In the present invention, the “adhesion shield” refers to a shield for preventing the deposition material from adhering to the inner wall and inner member of the vacuum thin film forming apparatus. Therefore, the deposition shield is fixed at a position where the deposition material is expected to adhere in the vacuum thin film forming apparatus (for example, only the inner surface of the deposition plate is different depending on the arrangement of members in the vacuum thin film forming apparatus. It is also fixed to the inner wall itself of the thin film forming chamber).

  The flat woven wire mesh used in the present invention is a wire mesh that is woven by enlarging the mesh by the vertical lines and sequentially bringing the horizontal lines into close contact with each other, and does not have a planar mesh opening like the plain weave. A twill woven wire mesh is a twill woven wire mesh with a twill weave. The horizontal lines are in close contact with both front and back surfaces of the wire mesh, and have a density twice that of a plain woven wire mesh. The shape of a plain woven wire mesh is shown in FIG. The protective shield of the present invention may include a single plain woven or twill woven wire mesh layer, or a multilayer structure in which a flat woven wire mesh and / or a twill woven wire mesh are laminated. A multilayer structure in which a tatami woven wire mesh and / or a twill woven wire mesh and a member selected from the group consisting of a metal sheet, an expanded metal, a punching metal, a plain woven wire mesh, and a twill woven wire mesh may be included. As long as the multi-layer structure has a plain woven or twill woven wire mesh at the most surface layer portion, any member may be used for the other layers. By taking a multiple structure, there are advantages such as increasing the strength of the deposition shield and facilitating deformation according to the shape of the place where the deposition shield is fixed. Moreover, it is also possible to integrate one member of the multilayer structure with a jig for attaching to the inner wall of the thin film forming apparatus or the inner member.

  The shape of the plain woven or twill woven wire mesh is a structure in which there are few openings on the surface and the vapor deposition material hardly adheres to the internal member. The size of the opening is preferably such that the size of the passing particle sphere is about 360 μm or less, particularly about 100 μm or less. When the size of the passing particle sphere exceeds about 360 μm, deposits such as vapor deposition materials pass through the mesh and adhere to the internal member. The horizontal line mesh of the plain woven or twill woven wire mesh is preferably about 50 to 3600 mesh, particularly preferably about 200 to 3600 mesh. Here, the mesh of horizontal lines (vertical lines) refers to the number of horizontal lines (vertical lines) between 25.4 mm. Further, the ratio of the horizontal line mesh to the vertical line mesh is preferably about 6 to 24, particularly about 6 to 20, with respect to the former 100. The wire diameter of the plain woven or twill woven wire mesh is preferably about 15 to 800 μm, more preferably about 15 to 250 μm. The thickness of the plain woven or twill woven wire mesh is preferably about 50 to 1400 μm, and particularly preferably about 50 to 800 μm.

  The material of the flat woven or twill woven wire mesh is not particularly limited, but examples include metals such as stainless steel, iron, aluminum, and copper, and because it is easy to process a thin wire that forms the wire mesh. The use of stainless steel is preferred.

  A method for fixing the deposition shield of the present invention including the layer of the plain woven or twill woven wire mesh to the inner wall or the inner member of the thin film forming chamber is not particularly limited, and may be a chemical method or a physical method. Can be fixed.

  Examples of the chemical fixing method include, but are not limited to, a method using adhesion, pressure bonding, and fusion. Further, examples of the physical fixing method include, but are not limited to, riveting, clip fixing, and caulking. More specifically, for example, a method of performing a blasting process by shot blasting using alumina as a medium on an inner wall or an inner member, applying a heat-resistant conductive paste on the treated surface, and attaching an adhesion shield; Examples include a method in which an internal member and an adhesion shield are attached by welding or caulking; a method in which an adhesion shield itself including a multi-layered metal mesh is used as a member of a thin film forming apparatus. From the viewpoint of cleaning the deposition shield, fixing in a removable form is preferable.

  Examples of the material for forming a thin film in the vacuum thin film forming apparatus of the present invention include, but are not limited to, tantalum nitride, tantalum, silica, silicon nitride, carbide titanium, titanium nitride, titanium, tungsten, and silicon tungsten.

EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples.
Example 1
The surface of a substrate A made of stainless steel (SUS304) of 100 mm × 100 mm × 3 mm was subjected to shot blasting treatment of # 60 alumina, and 20 μm of heat resistant conductive paste B was applied on the shot blasted surface. On the surface of the base material A coated with a heat-resistant conductive paste, a 200 μm thick flat woven wire mesh C knitted with SUS316 wire with a wire diameter of 94 μm and 55 μm is sandwiched and held, and sintered at 200 ° C. A wire mesh was pasted to obtain a test piece 1 (FIG. 2. For simplicity, the structure of the plain woven wire mesh C in FIG. 2 is shown in a simplified manner). The test piece 1 was subjected to ultrasonic cleaning in ultrapure water. After washing, the test piece 1 was dried at 105 ° C.

After drying, a sputtered film of 3 μm tantalum nitride was produced on the test piece 1 using a sputtering apparatus. As a result of measuring the residual stress of the tantalum nitride film using the X-ray diffraction method, it was 321 MPa. The results are shown in Table 1. Residual stress indicates the ease with which the deposited deposit is peeled off, and it is said that the adhesiveness deteriorates as the stress (absolute value) increases. There are two types of residual stresses: tensile stress (positive value) and compressive stress (negative value). When these two types of absolute values are compared with the same stress, in the tensile stress, the force acts in the direction in which the thin film peels from the base material, and therefore the adhesion force is lower than the compressive stress. Therefore, when the absolute values are the same, it can be considered that a film having a negative absolute value is a better film than a positive value.
Example 2
A hole of φ5 mm was drilled in a 200 μm thick wire mesh knitted with SUS316 wire of substrate A and wire diameters of 80 μm and 53 μm, and riveted to the hollow part to obtain test piece 2 (FIG. 3). For the sake of simplicity, the structure of the twilled woven wire mesh C in FIG. 3 is shown in a simplified manner). The test piece 2 was subjected to ultrasonic cleaning in ultrapure water. After washing, the test piece 2 was dried at 105 ° C.

After drying, a sputtered film of 3 μm tantalum nitride was produced on the test piece 2 using a sputtering apparatus. As a result of measuring the residual stress of the tantalum nitride film using the X-ray diffraction method, it was -762 MPa. The results are shown in Table 1.
Example 3
A hole of φ5 mm was drilled in a 100 μm-thick twilled woven wire mesh knitted with SUS316 wire having a base material A and wire diameters of 40 μm and 30 μm, and riveted to the hollow part to obtain a test piece 3. The test piece 3 was subjected to ultrasonic cleaning in ultrapure water. The test piece 3 was dried at 105 ° C. after washing.

After drying, a sputtered film of 3 μm tantalum nitride was produced on the test piece 3 using a sputtering apparatus. As a result of measuring the residual stress of the tantalum nitride film using the X-ray diffraction method, it was -722 MPa. The results are shown in Table 1.
Example 4
A hole of φ5 mm was drilled in a 470 μm thick wire mesh woven with SUS316 wire having a base material A and wire diameters of 190 μm and 140 μm, and the hollow part was riveted to obtain a test piece 4. The test piece 4 was subjected to ultrasonic cleaning in ultrapure water. The test piece 4 was dried at 105 ° C. after washing.

After drying, a sputtered film of 3 μm tantalum nitride was produced on the test piece 4 using a sputtering apparatus. As a result of measuring the residual stress of the tantalum nitride film using the X-ray diffraction method, it was -340 MPa. The results are shown in Table 1.
Example 5
The test piece 2 used in Example 2 was subjected to ultrasonic cleaning in ultrapure water. The test piece was dried at 105 ° C. after washing.

After drying, a 300 μm-thick titanium nitride sputtered film was formed on the test piece 2 using a sputtering apparatus. By cutting the rivets, the twilled woven wire mesh could be peeled off. As a result, there was no adhesion of titanium nitride to the substrate A.
Example 6
The test piece 1 used in Example 1 was subjected to ultrasonic cleaning in ultrapure water. After washing, the test piece 1 was dried at 105 ° C.
The number of particles on the wire mesh of the test piece 1 dried after washing was measured using an air particle counter (KM-20, manufactured by Rion Co., Ltd.). As a result, the number of particles having a diameter of 0.2 μm or more was 5 / cm ² . The results are shown in Table 2.
Example 7
The test piece 2 used in Example 2 was subjected to ultrasonic cleaning in ultrapure water. After washing, the test piece 2 was dried at 105 ° C.

The number of particles on the wire mesh of the test piece 2 dried after washing was measured using an air particle counter (KM-20, manufactured by Rion Co., Ltd.). As a result, the number of particles having a diameter of 0.2 μm or more was 15 / cm ² . The results are shown in Table 2.
Comparative Example 1
The surface of the base material A made of stainless steel (SUS304) of 100 mm × 100 mm × 3 mm was subjected to shot blasting treatment of # 46 alumina, and 200 μm of aluminum plasma spraying was deposited on the blasted surface to obtain a test piece 5. . The test piece 5 was subjected to ultrasonic cleaning in ultrapure water. After washing, the test piece 5 was dried at 105 ° C.

After drying, a sputtered film of 3 μm tantalum nitride was produced on the test piece 5 using a sputtering apparatus. As a result of measuring the residual stress of the tantalum nitride film using the X-ray diffraction method, it was 1315 MPa. The results are shown in Table 1.
Comparative Example 2
The surface of the base material A made of stainless steel (SUS304) of 100 mm × 100 mm × 3 mm was subjected to shot blasting treatment of # 46 alumina, and 200 μm of copper plasma spraying was deposited on the blasted surface to obtain a test piece 6. . The test piece 6 was subjected to ultrasonic cleaning in ultrapure water. After washing, the test piece 6 was dried at 105 ° C.

After drying, a sputtered film of 3 μm tantalum nitride was produced on the test piece 6 using a sputtering apparatus. As a result of measuring the residual stress of the tantalum nitride film using the X-ray diffraction method, it was 1471 MPa. The results are shown in Table 1.
Comparative Example 3
The surface of a substrate A made of stainless steel (SUS304) of 100 mm × 100 mm × 3 mm was subjected to shot blasting treatment of # 60 alumina, and 20 μm of heat resistant conductive paste B was applied on the shot blasted surface. A 200 μm thick plain woven wire mesh knitted with SUS316 wire with a wire diameter of 100 μm is sandwiched between clips on the surface of the base material A coated with heat-resistant conductive paste, sintered at 200 ° C., this wire mesh is attached, and a test piece It was set to 7. The test piece 7 was subjected to ultrasonic cleaning in ultrapure water. After washing, the test piece 7 was dried at 105 ° C.

After drying, a sputtered film of 3 μm tantalum nitride was produced on the test piece 7 using a sputtering apparatus. As a result of measuring the residual stress of the tantalum nitride film using the X-ray diffraction method, it was 4862 MPa. The results are shown in Table 1.
Comparative Example 4
A hole of φ5 mm was drilled in a 60 μm-thick twill wire mesh knitted with SUS316 wire having a base material A and a wire diameter of 30 μm, and the hollow part was riveted to obtain a test piece 8. The test piece 8 was subjected to ultrasonic cleaning in ultrapure water. The test piece 8 was dried at 105 ° C. after washing.

After drying, a sputtered film of 3 μm tantalum nitride was produced on the test piece 8 using a sputtering apparatus. As a result of measuring the residual stress of the tantalum nitride film using the X-ray diffraction method, it was 2203 MPa. The results are shown in Table 1.
Comparative Example 5
The test piece 7 used in Comparative Example 3 was subjected to ultrasonic cleaning in ultrapure water. After washing, the test piece 7 was dried at 105 ° C.

After drying, a 300 μm-thick titanium nitride sputtered film was produced on the test piece 7 using a sputtering apparatus. Cracks were observed in the titanium nitride film. Moreover, although the plain weave wire mesh could be peeled off by cutting the rivets, the adhesion of titanium nitride remained on the base material A, and the regeneration required a chemical deposit removal step after peeling the plain weave wire mesh.
Comparative Example 6
The test piece 5 used in Comparative Example 1 was subjected to ultrasonic cleaning in ultrapure water. After washing, the test piece 5 was dried at 105 ° C. The number of particles on the sprayed coating of the test piece 5 dried after washing was measured using an air particle counter (KM-20, manufactured by Rion Co., Ltd.). As a result, the number of particles having a diameter of 0.2 μm or more was 30 / cm ² . The results are shown in Table 2.

  In the thin film forming apparatus using the vacuum chamber of the present invention, the deposit is obtained by attaching an adhesion shield including a layer of plain woven or twilled woven wire mesh to a vacuum chamber inner wall, an adhesion prevention plate, a shutter or a cover ring. It can be used to suppress the peeling and falling off.

FIG. 1 shows the shape of a plain woven wire mesh. FIG. 2 shows a schematic diagram of the test piece 1. FIG. 3 shows a schematic diagram of the test pieces 2, 3, 4. FIG. 4 is a schematic diagram of the test pieces 5 and 6.

Explanation of symbols

A: Base material (SUS304: 100 mm × 100 mm × 3 mm)
B: Heat-resistant conductive paste C: Plain woven wire mesh (including multi-layered wire mesh)
D: Twill woven wire mesh (including multi-layer wire mesh)
E: Rivet

Claims (5)

An adhesion shield for a vacuum thin film forming apparatus including a layer of plain woven or twill woven wire mesh. The deposition shield for the vacuum thin film forming apparatus includes a plain woven or twill woven wire mesh alone, a multilayer structure in which a plain woven and / or twill woven wire mesh is laminated, or a flat woven and / or twill woven wire mesh 2. The deposition shield for a vacuum thin film forming apparatus according to claim 1, having a multilayer structure in which a member selected from the group consisting of a thin metal plate, an expanded metal, a punching metal, a plain weave wire mesh, and a twill wire mesh is superposed. The protective shield for a vacuum thin film forming apparatus according to claim 1 or 2, wherein the layer of the plain woven or twill woven wire mesh is made of a material selected from the group consisting of stainless steel, iron, aluminum, and copper. A vacuum thin film forming apparatus, wherein an inner wall and / or an internal member of the thin film forming chamber is covered with the deposition shield according to any one of claims 1 to 3. The manufacturing method of a vacuum thin film forming apparatus including fixing the deposition shield as described in any one of Claims 1-3 to the inner wall and / or internal member of a thin film formation chamber.

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