JP4760844B2 - Electronic component manufacturing method and electronic component manufactured by the method - Google Patents

Description

  The present invention relates to a method of manufacturing an electronic component by a relief offset method and an electronic component manufactured by the method.

  Conventionally, the following various methods have been studied as a method of manufacturing an electronic component by printing. For example, Patent Document 1 describes a method for suppressing a dimensional error by adjusting a transfer speed and a reverse transfer speed in a thin film transistor circuit forming method for forming a resist pattern using a circular offset printing press. In Patent Document 2, a conductor layer is formed on a core insulating layer by a printing method, an insulating layer having holes is formed on the conductor layer by a printing method, and the holes are filled with an electromagnetic property material by a printing method. A method of manufacturing a wiring board is described.

  In Patent Document 3, in order to manufacture a printed wiring board having a fine pattern with simple equipment without using a photolithography method, a functional material is applied to a releasable surface to form an application surface, and the application The functional material is pressed and removed onto the surface of the relief plate by reversing and removing the functional material on the surface, and the functional material remaining on the coating surface is reversed and transferred onto the substrate. A method for producing a printed wiring board comprising a step of heating and drying a coating film is described. In Patent Document 4, in order to form an insulating layer having a good fine pattern by a printing method, an insulating ink having a viscosity at 25 ° C. of 50 mPa · s or less is applied on the releasable surface, and then a reverse pattern is formed. A relief printing plate having convex portions is pressed against the coating film to remove the coating film having the reverse pattern from the releasable surface, and the coating film remaining on the releasable surface is transferred to the substrate by reverse transfer. And a method of forming an insulating layer having a predetermined pattern by solidification.

  In Patent Document 5, a printing ink composition containing an organic solvent having specific physical properties is applied on the surface of a silicone resin film, and a part of the coating film is inverted and transferred onto the convex surface of the relief plate. A method is described in which a coating film remaining on the silicone resin film is reversely transferred onto the surface of a substrate and then dried to form a resin film. In Patent Document 6, an ink application surface is formed by applying ink on a blanket, and after pressing the relief plate onto the ink application surface to remove the ink in a portion in contact with the relief plate from the blanket (the relief offset method). ), A method of manufacturing an electronic component by a printing method in which the ink remaining on the blanket is transferred to a printing medium by reverse transfer, and a pattern with an ink selected from the group consisting of conductive ink, insulating ink, and semiconductor ink A method of manufacturing an electronic component is disclosed in which one layer or a plurality of layers are formed. However, in the method of manufacturing an electronic component according to the same method, it is necessary to form a patterned layer having each function one layer at a time on a blanket, and to laminate this on a substrate to be printed. (1) Overprinting It takes a lot of man-hours to manufacture, (2) it is difficult to stack the pattern of each layer at an accurate position, and (3) a defect in the pattern stacked on the lower layer pattern due to a step difference, There were serious problems such as the occurrence of defects.

JP-A-7-240523 JP 2003-110242 A Japanese Patent Laid-Open No. 2005-057118 JP 2005-353770 A JP 2006-045294 A JP 2007-273712 A

  The present invention has been made in view of the above circumstances, and by reducing the number of overprinting man-hours, precise overlay pattern position accuracy (alignment accuracy), and enabling substantially stepless lamination, productivity is improved. It is an object to provide a method for manufacturing a new electronic component that can improve, improve dimensional accuracy, and eliminate defects and defects.

  The present invention solves the above problems by applying a reverse printing method and simultaneously performing reverse transfer of a plurality of ink layers. That is, in the present invention, first, after forming a composite ink pattern layer on the releasable surface of the transfer plate using a relief offset method, the composite ink pattern layer is simultaneously reversely transferred onto a printing medium. The manufacturing method of the electronic component which has this.

  Secondly, two or more kinds of functional material inks were laminated on the release surface of the transfer plate, and the non-image portion of the laminated ink was simultaneously removed using the relief offset method to form a multilayer pattern. Then, the manufacturing method of the above-mentioned electronic component which has the process of carrying out reverse transfer of this composite ink pattern layer on a to-be-printed body simultaneously is provided.

  Third, (1) a step of forming a first functional material ink pattern layer patterned with one or more functional material inks by a relief offset method on the release surface of the transfer plate (step 1) ), (2) Steps of applying the second functional material ink film layer to the first patterned layer (Step 2), (3) First functional material ink pattern layer and second layer Provided is a method for manufacturing the above-described electronic component, which includes a step of simultaneously transferring a functional material ink film layer onto a substrate to be transferred (lamination reverse transfer step).

  Fourthly, the above-described method for producing an electronic component, in which the above-described second functional material ink film layer is overcoated in two or more layers, is provided.

  Fifth, after the above-described step 2, a part of the second functional material ink film layer, or a part of the second functional material ink film layer and the first functional material ink pattern layer, Provided is a method for manufacturing the above-described electronic component, which includes a step (removal step) of repatterning (removing) by a relief offset method.

  Sixth, the above-described method for manufacturing an electronic component including the step (step 3) of forming a third functional material ink film layer after the removing step is provided.

  Seventh, at least one layer of the functional laminate constituting the electronic component provides the electronic component manufactured by any of the methods described above.

  Eighth, an organic transistor element in which at least one of the materials of the layers forming the electronic component is an organic semiconductor.

  According to the present invention, it is possible to reduce the number of times of laminating printing of the functional material ink pattern layer, to realize a highly accurate alignment between the functional material ink pattern layers, and to form a laminated structure substantially without forming a step. Therefore, defects and defects in each functional layer material pattern layer can be eliminated. The present invention makes it possible to provide high-performance electronic components with high productivity.

  The present invention will be described below with reference to the drawings based on the best mode. In addition, the figure is explanatory drawing of the printing method used with the manufacturing method of the electronic component of this invention. The drawings schematically show the printing process of the present invention, and the proportional relationship of dimensions does not particularly reflect the actual situation.

  The method for producing an electronic component according to the present invention includes a conventional method of forming a pattern with a single type of ink on a blanket serving as a transfer plate with a single type of ink, and transferring the printed pattern onto a substrate by reverse transfer. It differs from the reverse printing method to be formed. The method of manufacturing an electronic component according to the present invention includes forming a composite pattern layer with two or more kinds of functional material inks in advance on a releasable surface of a transfer plate, and then reversely transferring the composite pattern layer onto a printed material. It is characterized by forming.

  The composite ink pattern layer referred to here is an ink pattern laminate comprising at least two types of ink. It may consist of one or more patterned ink layers and one or more ink solid film layers. A composite ink pattern comprising at least two types of functional material inks in the layer is referred to. The ink solid film may completely cover the ink pattern, or may be in a form of filling the space between the patterns below the thickness of the ink pattern layer.

  Thereby, compared with the conventional reversal printing method, the number of processes can be significantly reduced, and high-precision alignment between functional pattern layers can be realized. In addition, a smooth printing surface free from a step due to a pattern can be obtained by forming a functional material ink pattern layer and a functional material ink film layer in advance on a transfer plate and then performing reverse transfer to a printing medium. Since a laminated structure can be formed without substantially forming a step, defects and defects of each functional layer pattern layer can be eliminated.

  The present invention is characterized in that a relief offset method is used as a method of forming a pattern of functional material ink on a transfer plate. The letterpress offset method of the present invention is an ink that forms an ink application surface by applying ink on the releasable surface of a transfer plate, and presses the letterpress plate as a release plate on the ink application surface to make contact with the letterpress plate. This is a method of removing from the transfer plate.

  There is no limitation on the method of applying ink to the releasable surface of the transfer plate, and for example, an inkjet method, a screen printing method, a spin coating method, a bar coating method, a slit coating method, a dip coating method, a spray coating method, or the like is used. .

  The functional material ink used in the present invention has a printing characteristic suitable for a printing method to be applied and forms a functional material necessary for an electronic component by heating, light, electron beam, drying or the like. The ink applied to the present invention is preferably one in which the material forming the functional material is dissolved or dispersed in an appropriate solvent. There is no restriction | limiting in the kind of solvent, The solvent suitable for melt | dissolution or dispersion | distribution of this functional material can be selected suitably. For example, various organic solvents such as water, hydrocarbon, alcohol, ketone, ether and ester can be used.

  In addition to the above functional materials, the ink contains binder components such as resins, antioxidants, various catalysts for promoting film formation, various interfacial energy regulators, leveling agents, mold release accelerators, etc. it can.

  As the functional material ink used in the present invention, for example, an ink necessary for forming a functional layer of an electronic component can be appropriately selected from conductive ink, insulating ink, semiconductor ink, protective film layer ink, and the like. That's fine. Further, according to the present invention, there is no particular limitation on the conversion method from the functional composite ink pattern layer printed and formed on the substrate to the functional material layer constituting the electronic component, and an optimum method can be selected for each. . For example, the functional material can be formed from the functional material ink by removing and drying the ink solvent component at room temperature and applying energy such as heat treatment, light such as ultraviolet rays, and electron beams.

  There is no limitation on the shape and form of the transfer plate having a releasable surface applied to the present invention, and the optimum shape and form for the printing method can be selected, such as film, flat plate, and roll. Also, the release surface of the transfer plate can be uniformly coated with ink, and can be easily released with a relief printing plate, and is surface treated with a material with low surface energy or a release agent. Applied materials can be applied. For example, an inorganic surface obtained by plating and vapor-depositing a fluorine resin, a silicone resin, an organic compound of a polyolefin resin, a ceramic layer, or a metal oxide layer can be applied. Among these, fluororesins and silicone resins are excellent in releasability and flexibility, and can be suitably applied as a releasable surface. Further, the releasable surface may be a uniform plane, and a relief plate and an intaglio plate may be patterned as necessary.

  FIG. 1 shows a multilayer pattern formed by laminating two or more kinds of functional material inks on the releasable surface of the transfer plate of the present invention, and simultaneously removing the non-image portion of the laminated ink using the relief offset method. It is the schematic diagram which showed schematically the method of carrying out reverse transfer of this multilayer pattern simultaneously on a to-be-printed body after forming.

  The present invention will be described with reference to the model diagram of FIG. FIG. 1A shows an example using two types of functional material inks. First, the functional material ink A (4) is uniformly and uniformly applied to the release surface of the transfer plate (1). Next, the functional material ink B (5) is uniformly and uniformly applied onto the ink A (4). At this time, it is preferable that the inks A (4) and B (5) are not mixed with each other. This can be realized by studying the process of the solvent composition of the bifunctional material ink and the preliminary drying of the ink A (4) as the base. Subsequently, the relief printing plate (2) used as a punching plate is pressed, and the patterning of ink A (4) and ink B (5) is performed simultaneously. Next, the double pattern is reversely transferred from the transfer plate to the printing medium (3). As a result, a pattern in which ink A (4) and ink B (5) are accurately overlapped can be formed. FIG. 1B shows an example in which functional material ink is superimposed on three layers and patterned simultaneously. Functional material ink different from the three layers (inks C, D, E) may be used, and the first and third layers may be the same ink.

  As an example of functional material ink lamination, formation of a conductive ink lamination pattern will be described. First, a conductive ink made of a conductive polymer such as PEDOT / PSS or polyaniline is uniformly applied on a transfer plate, and then a conductive ink in which nano silver particles are uniformly dispersed in a solvent is layered on a uniform surface to obtain different materials 2 Form different types of ink layers. Subsequently, the non-image portion of the ink layer is simultaneously removed by a relief offset method, and the ink pattern remaining on the peeled surface of the transfer plate is reversely transferred onto the substrate. As a result, a pattern in which the conductive polymer is accurately laminated on the nanosilver pattern is obtained. In addition, as an example of forming a three-layer ink pattern at the same time, for example, the first ink layer is formed with insulating ink, the second layer is formed with conductive ink, and the third layer is formed with insulating ink. A conductive pattern sandwiched between films can be formed.

  The present invention also provides a method of performing reverse transfer onto a substrate after forming a functional material ink pattern and a functional material ink layer in advance on a releasable surface of a transfer plate.

  The present invention will be described with reference to the model diagram of FIG. As shown in FIG. 2 (a), the intaglio plate 2 which is the first layer applied uniformly on the reverse transfer plate 1 is pressed against the intaglio plate 2 which is a drawing plate, and the ink in the portion in contact with the relief plate is transferred to the transfer plate. By removing from above, the required first functional ink pattern layer 9 is formed on the transfer plate 1 (letter offset method) (step 1). At this time, the first ink pattern layer may be a single layer or a multilayer. Next, a second functional material ink film layer 10 made of a different material is applied and formed as a second ink layer on the pattern formed on the transfer plate 1 (step 2), and then on the substrate 3 to be printed. In addition, the electronic component is manufactured through the step of simultaneously performing reverse transfer of the first layer and the second layer (step 3: reverse transfer). The ink film layer 10 may completely cover the patterned first layer or may be embedded between the patterns.

  By using this method, it is possible to easily obtain the surface shape in which the ink pattern layer 9 formed on the transfer plate is embedded in the layer formed of the ink film layer 10, and a printing surface having substantially no step. Is obtained. This is because the ink that forms the second ink film layer has a sufficiently high leveling property compared to the conventional method in which a pattern is formed on a base material in advance and a new ink layer is reversely transferred and printed. It is presumed that it can be applied onto the surface 9 to obtain the flatness of the surface in contact with the substrate surface by reversal transfer and to reduce the residual stress of the ink layer caused by the stepped shape of the pattern. Of course, this does not limit the present invention.

  The first patterned layer may be completely covered with the ink forming the second layer, or may penetrate through the second layer as required (FIG. 2B). ). Such a form can be easily realized by adjusting the thickness of the pattern formed in step 1 and the thickness of the second layer formed in step 2.

  Further, the second ink film layer on the patterned first ink layer may be a single layer, or may have a multilayer structure with different inks as required (FIG. 2 (c)). .

  By applying the present invention to, for example, the manufacture of a MIS type organic transistor, it is possible to easily manufacture a stepless surface in which a gate electrode, a source / drain electrode, and each wiring pattern are embedded in an insulating film. Further, by applying to the formation of a protective film of an organic semiconductor, it is possible to form a protective film integrally having conductive vias that penetrate the protective film.

  In the present invention, as shown in a model diagram of FIG. 2D, the step of forming the second layer on the first layer (step 2) is performed on the first ink pattern layer described above. A step of forming a second ink film layer (step 2-1), and a step of patterning the second ink film layer with the second plate 2a by a relief offset method (step 2-2). Provided is a method for manufacturing an electronic component. Patterning after the formation of the second ink film layer by the second punching plate 2a may be performed only on the second ink film layer portion, or a part of the already patterned first ink pattern layer may be removed simultaneously. And may be repatterned.

  According to the present invention, an electronic component having a complicated structure can be easily formed by forming a composite pattern exhibiting different functions on the same transfer plate, and then performing reverse transfer on the printing medium. According to the present invention, a new pattern can be formed with extremely high positional accuracy between patterns formed along the first layer or along the pattern, which is extremely difficult by the conventional printing method.

  In the present invention, first, a first ink pattern layer is formed on a transfer plate by a letterpress offset method, and then ink to be a second ink film layer 10 is applied on the pattern. At this time, the second ink film layer may be thick so as to completely cover the patterned first layer, and is applied so as to be the same as or thinner than the thickness of the pattern so as to fill the space between the patterns. You may do it. At this time, for example, by adjusting the first ink to exhibit liquid repellency with respect to the second ink, the second ink layer can be prevented from being formed on the pattern. Next, the present invention uses a second punch 2a having a shape different from that of the first punch 2 and a first ink pattern layer and a second ink film layer already formed on the transfer plate by the relief offset method. Thus, a new pattern is formed at the same time. In the pattern formation by the second punching plate 2a, the first ink pattern layer may be left as it is, and a part of the second ink film layer may be removed. The pattern shape of the ink pattern layer may be partially changed at the same time. By making the second ink film layer into two or more layers of different materials, a composite pattern composed of three or more kinds of materials can be formed.

  For example, when the present invention is applied as a manufacturing method of a MIS organic transistor element, an organic semiconductor layer is formed only between a source electrode and a drain electrode, and only the side walls of the source electrode and the drain electrode are in contact with the organic semiconductor. A contact-type organic transistor element structure can be easily formed.

  In the present invention, the step of forming the first functional material ink pattern layer (step 1) as shown in the model diagram of FIG. 2E is the step of forming the first functional material ink pattern layer on the transfer plate. Step of forming by the relief printing method (step 1-1), Step of forming the second functional material ink film layer 10 on the first functional material ink pattern layer 9 (step 1-2), relief offset The manufacturing method of the electronic component of Claim 1 which has the process (process 1-3) of patterning a 2nd ink film layer by a method. A pattern forming method formed of two or more different materials on the same transfer plate can be realized by the same method as described above. Next, the third functional material ink film layer 12 is further applied and formed on the composite pattern formed of two or more different materials on the transfer plate, and then reversely transferred onto the substrate (substrate) to be printed. Provide a method of forming. The ink application may completely cover the pattern, or may be equal to or thinner than the pattern thickness.

  The functional material ink used in the present invention can be appropriately selected from, for example, conductive ink, insulating ink, semiconductor ink, protective film forming ink and the like according to the required characteristics of the electronic component to be manufactured. The conversion from the functional material ink pattern layer and ink film layer printed on the printing medium according to the present invention to the functional material layer constituting the electronic component includes, for example, room temperature drying, heat treatment, ultraviolet light, electronic It can be carried out in a method that is optimal for the ink characteristics and electronic components, such as the treatment of irradiation of the line.

  The present invention also provides an organic transistor element in which at least one of functional layer materials forming an electronic component is an organic semiconductor. In the present invention, the method for forming the organic semiconductor layer is not particularly limited, and an organic semiconductor to be used, a functional material layer serving as a base, and a method suitable for the substrate can be appropriately selected. For example, dry processes such as vacuum deposition, chemical vapor deposition, ion plating, spin coating, dip coating, dispenser coating, slit coating, casting, letterpress reverse transfer printing, screen printing, gravure printing, gravure Wet processes such as offset printing, microcontact method, letterpress offset printing, etc. can be applied. Of these, the relief offset printing method is the most preferable layer forming method because the film thickness can be easily controlled, the printing position accuracy is excellent, and a fine pattern can be easily formed.

  In the present invention, the organic semiconductor material for forming the organic semiconductor layer is not limited. For example, a low and low molecular organic semiconductor can be used to form a phthalocyanine derivative, a polyphyrin derivative, a naphthalenetetracarboxylic acid diimide derivative, a fullerene derivative, pentacene, pentacentriisopropylsilyl. (TIPS) pentacene, fluorinated pentacene, fluorinated tetracene, perylene, tetracene, pyrene, phenanthrene, coronene and other polycyclic aromatic compounds and derivatives thereof, oligothiophene and derivatives thereof, thiazole derivatives, fullerene derivatives, other thiophenes, phenylene, Various low molecular semiconductors combined with vinylene and the like, and organic semiconductor precursors that become organic semiconductors by heating or the like can be applied. In addition, as the polymer compound, polythiophene, poly (3-hexylthiophene), polythiophene polymer such as PQT-12, thiophene-thienothiophene copolymer such as B10TTT, PB12TTT, PB14TTT, fluorene polymer such as F8T2, In addition, phenylene vinylene polymers such as paraphenylene vinylene, arylamine polymers such as polytriarylamine, one or more soluble acene compounds such as TIPS pentacene and various pentacene precursors, and copolymers thereof are preferably used. it can.

  Among these organic semiconductors, a solvent-soluble one that can be easily formed into an ink, can be formed into a functional layer and patterned by a wet process, and can be patterned by a relief offset method can be suitably used. As these solvent-soluble organic semiconductors, poly (3-hexylthiophene), polythiophene polymers such as PQT-12, thiophene-thienothiophene copolymers such as PB10TTT, PB12TTT, PB14TTT, fluorene polymers such as F8T2, phenylene Vinylene polymers, triarylamine polymers, and TIPS pentacene can be preferably used.

  Solvents applicable to these organic semiconductor inks are only required to be able to dissolve the organic semiconductor at room temperature or slightly heated, have an appropriate volatility, and can form an organic semiconductor thin film after volatilization of the solvent. For example, toluene, xylene, chloroform Anisole, methylene chloride, tetrahydrofuran, cyclohexanone, mesitylene, chlorobenzene solvents such as dichlorobenzene and trichlorobenzene, and mixed solvents containing these solvents can be suitably used.

  In addition, for the purpose of improving ink characteristics, a surface energy modifier such as a silicone-based or fluorine-based surfactant can be added to these solutions. In particular, a fluorosurfactant for a crystalline semiconductor solution can be suitably used because it can be expected not only to improve ink characteristics but also to improve characteristics of a semiconductor film formed by drying ink, such as field effect mobility. .

  Examples of the conductive ink for forming the conductor applicable to the present invention include gold, silver, copper, nickel, zinc, aluminum, calcium, magnesium, iron, platinum, palladium, tin, chromium, lead in a suitable solvent. Metal particles such as silver and palladium, alloys of these metals such as silver / palladium, and the like, zinc oxide (ZnO), a thermally decomposable metal compound that thermally differentiates at a relatively low temperature, such as silver oxide, organic silver, and organic gold. In addition, conductive metal oxide particles such as indium tin oxide (ITO) may be included as a conductive component, and conductive polymers such as polyethylenedioxythiophene / polystyrene sulfonic acid (PEDOT / PSS) and polyaniline are included. May be. In particular, inks in which nano silver particles are dispersed in a solvent and mixed with a release agent such as low molecular weight silicone and an interfacial energy modifier such as a fluorosurfactant are suitable for the letterpress offset method. Since high electroconductivity is shown by baking, it can be used conveniently.

  The insulating ink that forms the insulator applicable to the present invention only needs to contain an insulating material. For example, an epoxy resin, a polyimide resin, a polyvinylpyrrolidone resin, a polyvinyl alcohol resin, an acrylonitrile resin, a methacrylic resin, and the like. Resin, polyamide resin, polyvinylphenol resin, phenol resin, polyamideimide resin, fluorine resin, melamine resin, urethane resin, polyester resin, alkyd resin, and the like can be applied. In addition, these may be used alone or in combination of two or more, and if necessary, constitutions such as high relative dielectric constant particles such as alumina fine particles, silica fine particles and tantalum oxide fine particles, and low relative dielectric constant particles such as hollow silica fine particles Ingredients may be added. There is no restriction | limiting in the solvent applicable to insulating ink, For example, various organic solvents, such as water, hydrocarbon type, alcohol type, ketone type, ether type, ester type, glycol ether type, can be used. If necessary, silicone-based and fluorine-based interfacial energy modifiers can be added.

  A protective film ink that forms a protective film that can be applied to the present invention includes a material that forms a film having excellent barrier properties such as light, oxygen, water, and ions by heating, light, electron beam, drying, and the like. Good. For example, polyacrylonitrile resin, polyvinyl alcohol resin, nylon resin, methacrylic resin, polyvinylidene chloride resin, fluorine resin, epoxy resin and other resins that form organic films, hydrolysis and heating as necessary A silane compound, silazane compound, magnesium alkoxide compound, aluminum alkoxide compound, or tantalum alkoxide compound that forms an inorganic film by treatment can be used. There is no restriction | limiting in an ink solvent, if there is no restriction | limiting in particular if the applied material can melt | dissolve or stably disperse. For example, various organic solvents such as water, hydrocarbon, alcohol, ketone, ether and ester can be used.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

Example 1 Formation of BGSC Organic Transistor Element As shown in FIG. 3, source / drain electrode patterns 9s / 9d were formed on the transfer plate 1 (3-1 in FIG. 3). In addition, the conductive ink which added the fluorine-type surfactant was used for electrode pattern formation. Next, a P3HT ink is applied uniformly on a transfer plate 1 on which the pattern is formed by applying a semiconductor ink mainly composed of P3HT using a capillary coater so that the film thickness after evaporation of the solvent is at most equal to or less than the thickness of the electrode. A film layer 13 was formed (3-2 in FIG. 3). At this time, application of the organic semiconductor ink was not observed on the electrode pattern.

  Next, the source / drain pattern formed on the transfer plate 1 and the relief plate are formed using the same pattern as the relief pattern for forming the electrode pattern except that the shape between the source / drain is opposite to that of the relief pattern forming the pattern. By aligning the corresponding positions of the pattern and using the relief offset method, all the organic semiconductor ink other than the organic semiconductor ink pattern remaining between the source / drain without removing the source / drain electrode pattern was removed from the transfer plate 1 ( 3-3 in FIG. Next, a gate insulating film ink was uniformly applied with a capillary coater so as to cover all the source / drain electrodes and organic semiconductor layer formed on the transfer plate 1, thereby forming an insulating ink film layer 10i (3-4 in FIG. 3). ).

  Next, on the gate electrode pattern embedded in the insulating film, the gate electrode is placed in the source / drain gap via the insulating film, and aligned and inverted and transferred to form a laminated structure under the organic semiconductor layer surface. (3-5 in FIG. 3). Next, the laminate was heat-treated on a hot plate at 150 ° C. for 40 minutes in a glow box to form an MIS type organic semiconductor transistor element structure having a bottom gate side contact (BGSC) structure.

(Example 2) Manufacturing method of BGBC type organic transistor element FIG. 4 shows a manufacturing method of a BGBC type MIS type organic transistor element.
(1) Creation of gate electrode:
A conductive ink for letterpress offset printing in which nano silver was dispersed was uniformly applied to the entire transfer plate 1 having a smooth release surface made of silicone resin by a capillary coater. Next, a glass relief (not shown) was pressed against the ink surface to remove excess ink, and a gate electrode pattern 9 g was formed on the transfer plate 1. Next, an insulating ink mainly composed of an epoxy resin and a polyvinylphenol resin was uniformly applied on the gate pattern 9g on the transfer plate 1 using a capillary coater to form an insulating ink film layer 10i. After being left for about 1 minute, the insulating film ink and the gate electrode pattern, which are in a semi-dried state, are reversely transferred onto a plastic film (printed body 3) mainly composed of polycarbonate, and the gate electrode is embedded in the insulating film ink. (4a-3).
(2) Formation of source / drain electrode Next, similarly to the formation of the buried gate pattern, the conductive electrode in which nano silver is dispersed is used to form the source electrode 9s and the drain electrode 9d on the transfer plate 1A, and the insulating film ink is used. It was applied on the electrode. Next, alignment was performed so that the gate electrode was disposed in the source / drain gap via the insulating film, and the gate electrode was embedded and inverted and transferred onto the insulating film (FIG. 4a-3) (FIG. 4a-4). The laminate formed of the conductive pattern and the insulating film is heated on a hot plate at about 150 ° C. for about 40 minutes to form a conductive pattern by sintering nano silver ink and crosslink the resin component of the insulating film ink for insulation. A film was formed.
(3) Formation of semiconductor layer Next, a transfer plate having a releasable surface made of a silicone resin using a semiconductor ink in which poly (3-hexylthiophene) (P3HT) is dissolved in xylene and a fluorosurfactant is added. Was patterned by a relief offset method (process drawing omitted), and the pattern 13 was reversely transferred onto the source / drain electrodes formed by firing first. Thereby, a bottom contact type MIS type organic transistor element was formed (FIGS. 4a-5).

(Example 3) BGBC + protective film (with vias) + pixel electrode As shown in FIG. 5a, on a transfer plate 1 having a smooth releasable surface made of a silicone resin, from a fluorosurfactant by a letterpress offset method. A conductive pattern 14 serving as a via was formed using nano silver ink added with the liquid repellent component. Adjust the coating thickness of the protective film-forming ink containing epoxy resin as the main component so that it is at least equal to or less than the thickness of the conductive pattern. An ink film layer was formed 15. At this time, no ink was observed on the pattern. The ink film layer for forming a protective film and the conductive pattern layer were simultaneously transferred in reverse so that the conductive pattern 14 was in contact with the drain electrode 9d of the organic transistor formed in Example 1, and then baked at 140 ° C. for about 30 minutes.

  Next, a via that previously formed a pattern to be a pixel electrode formed on the transfer plate 1 having a smooth release surface made of a silicone resin by a relief printing method using a conductive ink mainly composed of PEDOT / PSS. Was reversely transferred onto the protective film so as to partially overlap, and then heat treatment was performed in an oven at 100 ° C. for 30 minutes. As a result, an organic TFT element structure having a pixel electrode 15 electrically connected to the drain electrode 9g by a protective film and a via was produced (5c).

  The present invention reduces the number of overprinting steps, forms a precise overlaid pattern, and solves the problem of steps in each layer, improves the productivity, improves the dimensional system, eliminates defects, etc. , RFID, TFT, CMOS, memory, organic EL element, various capacitors, inductors, resistors, solar cells, and other electronic components.

(A) Two-layer simultaneous patterning and reverse transfer by letterpress offset method (b) Three-layer simultaneous patterning and reverse transfer by letterpress offset method (A) One-layer covering (b) Pattern penetration (c) Multi-layer covering (d) Removal step (e) Multi-layer covering after removal (3-1) Pattern removal (electrode formation) (3-2) Solid semiconductor coating (3-3) Pattern removal (3-4) Gate insulation film solid coating (3-5) Reverse transfer (4a-1) Gate electrode formation (4a-2) Insulating film solid coating (4a-3) Inversion transfer to printed material (4b-1) Source / drain electrode formation (4b-2) Insulating film solid coating (4a -4) Reverse transfer of "4b-2" onto "4a-3" (4a-5) Reverse transfer of semiconductor layer (5a) Conductive pattern (via) formation (5b) Protective film solid coating (5c) Reverse transfer of “5b” on “4a-5”

Explanation of symbols

1. Transfer plate 1A. Transfer plate 2. Relief printing plate 2a. 2. Second relief printing plate Printed material (base material)
4). Ink film layer A
5. Ink film layer B
6). Ink film layer C
7). Ink film layer D
8). Ink film layer E
9. A first ink layer 9G patterned by the relief offset method. Gate electrode 9S. Source electrode 9D. Drain electrode 10. Second functional material ink film layer 10I. 11. Insulating ink layer 11.2 Second ink film layer Third functional material ink film layer 13. Organic semiconductor ink film 14. 14. Conductive pattern to be a via Protective film ink film layer 16. Pixel electrode

Claims (8)

After applying a functional material ink selected from conductive ink, insulating ink, semiconductor ink and protective film forming ink on the release surface of the transfer plate, a letterpress is applied to the ink application surface of the functional material ink. A step of forming an ink pattern layer corresponding to a portion not in contact with the relief plate using a relief offset method in which the ink in a portion that is pressed to contact the relief plate is removed from the transfer plate, from the functional material ink described above And a layer made of a functional material ink selected from conductive ink, insulating ink, semiconductor ink, and protective film forming ink are laminated and / or juxtaposed so as not to mix with each other. forming a composite ink pattern layer, the outermost surface of the layer containing 及 beauty the composite ink pattern layer so as to face the printing substrate, the release of the transfer plate to the composite ink pattern layer Method of manufacturing an electronic component, characterized in that the sex surface comprising the step of inverting transferred onto the printing material. Two or more layers of different functional material inks selected from conductive ink, insulating ink, semiconductor ink and protective film forming ink are laminated and applied on the release surface of the transfer plate so as not to mix with each other. After forming the layer ink layer, press the relief plate corresponding to the non-image area to the ink application surface of the functional material ink of the multilayer ink layer to transfer the ink in the portion that contacts the relief plate A step of forming a multilayer ink pattern layer corresponding to a portion not in contact with the relief plate using a relief offset method for removing from the plate, such that the outermost surface of the multilayer ink pattern layer faces the substrate A method for producing an electronic component comprising the step of reversely transferring the multilayer ink pattern onto a substrate from a releasable surface of a transfer plate. (1) A step of forming a first functional material ink pattern layer patterned with one or more functional material inks by a relief offset method on the release surface of the transfer plate (step 1),
(2) A step of applying a second functional material ink film layer on the first patterned layer (Step 2),
(3) The method further comprises a step of reversely transferring the first functional material ink pattern layer and the second functional material ink film layer onto the substrate (lamination reverse transfer step). The manufacturing method of the electronic component of description. The manufacturing method of the electronic component of Claim 3 with which the above-mentioned 2nd functional material ink film layer was overcoated by 2 or more layers. After the above-described step 2, a part of the second functional material ink film layer or a part of the second functional material ink film layer and the first ink pattern layer is removed by a relief offset method. The manufacturing method of the electronic component of Claim 3 or 4 which has (removal process). The manufacturing method of the electronic component of Claim 5 which has the process (process 3) of forming a 3rd functional material ink film layer after the above-mentioned removal process. The electronic component manufactured by the method in any one of Claims 1-6 at least one layer of the functional laminated body which comprises an electronic component. The organic transistor element whose at least one of the material of the layer which forms the electronic component of Claim 7 is an organic semiconductor.

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