JP4758500B2 - Heat treatment device - Google Patents

Heat treatment device Download PDF

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JP4758500B2
JP4758500B2 JP2009169794A JP2009169794A JP4758500B2 JP 4758500 B2 JP4758500 B2 JP 4758500B2 JP 2009169794 A JP2009169794 A JP 2009169794A JP 2009169794 A JP2009169794 A JP 2009169794A JP 4758500 B2 JP4758500 B2 JP 4758500B2
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positioning
hole
protrusion
positioning structure
fitted
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JP2011023681A (en
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修之 牧野
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Sharp Corp
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Sharp Corp
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Priority to TW99124042A priority patent/TW201111252A/en
Priority to PCT/JP2010/062255 priority patent/WO2011010668A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

本発明は、被搬送物を所定の範囲内に位置決めして設置するための位置決め構造を搭載する加熱処理装置及び搬送装置に関する。   The present invention relates to a heat treatment apparatus and a transport apparatus that are equipped with a positioning structure for positioning and placing a transported object within a predetermined range.

気相反応炉などの処理装置における機構部品の位置決めでは、温度上昇に伴い生じる各部の熱膨張への対応が必須でありかつ重要である。   In positioning of mechanical parts in a processing apparatus such as a gas phase reactor, it is essential and important to cope with the thermal expansion of each part that occurs as the temperature rises.

特許文献１では、半導体ウエハが上に載置される支持領域を備えた上面を有する載置台と、支持領域を囲むようにして前記載置台の上面上に配置され、支持領域上に載置された半導体ウエハの前記上面に沿う移動を規定する、載置台よりも熱膨張率の低い材料で形成された位置決めリング部材とを有し、複数の突部が載置台の上面の周囲部分にリング部材に沿って互いに所定間隔を有して設けられている。また、複数のスロットが、それぞれ対応する突部を受けるように前記位置決めリングに形成されている。これらスロットは、中に挿入された突起の前記位置決めリング部材の径方向への相対的な移動を許容し、かつ中に挿入された突起のリング部材の回転方向の相対的移動を全体として規制する。   In Patent Document 1, a mounting table having a top surface with a support region on which a semiconductor wafer is mounted, and a semiconductor mounted on the support region and disposed on the top surface of the mounting table so as to surround the support region A positioning ring member made of a material having a lower coefficient of thermal expansion than the mounting table, which regulates the movement of the wafer along the upper surface, and a plurality of protrusions extend along the ring member around the upper surface of the mounting table. Are provided at predetermined intervals. A plurality of slots are formed in the positioning ring so as to receive the corresponding protrusions. These slots allow the relative movement in the radial direction of the positioning ring member of the positioning ring member inserted therein, and restrict the relative movement in the rotational direction of the ring member of the projection inserted therein. .

特許文献２では、基板保持具に保持された基板を処理する処理室と、処理室の内部を加熱する加熱手段と、基板保持具の底部に設けられ、その底面に複数の位置決め溝が形成された第１の蓋体と、第１の蓋体よりも熱膨張率の大きい材質で形成され、第１の蓋体の底面と対向配置された第２の蓋体と、第２の蓋体に対して前記第１の蓋体を位置決めする。そのために前記第１の蓋体における複数の位置決め溝のそれぞれと相対する位置に設けられた複数の位置決め手段とを備えている。また該複数の位置決め溝は、第２の蓋体の熱変形によって複数の位置決め手段のそれぞれが対応する位置決め溝の壁面に所定値以上の応力を加えないように、第１の蓋体における底部の中心部から周縁方向に向けて漸次広がるように形成されていることを特徴としている。   In Patent Document 2, a processing chamber for processing a substrate held by a substrate holder, a heating means for heating the inside of the processing chamber, and a bottom portion of the substrate holder are provided, and a plurality of positioning grooves are formed on the bottom surface. A first lid, a second lid formed of a material having a higher thermal expansion coefficient than the first lid, and disposed opposite to the bottom surface of the first lid, and the second lid The first lid is positioned with respect to the first lid. For this purpose, there are provided a plurality of positioning means provided at positions facing each of the plurality of positioning grooves in the first lid. Further, the plurality of positioning grooves are formed on the bottom of the first lid so that a stress greater than a predetermined value is not applied to the wall of the positioning groove corresponding to each of the plurality of positioning means due to thermal deformation of the second lid. It is characterized by being formed so as to gradually spread from the central portion toward the peripheral direction.

特許文献３では、上下ヒンジ機構と開閉体を有し、まず下部ヒンジにおいて充分に大きな穴に軸を入れて開閉体を仮に支えた状態とし、この状態で上部ヒンジの位置あわせを行った後、開閉体を回転させることで開閉体が位置決め位置に誘導され上下ヒンジを簡単に嵌合させることが出来る。   In patent document 3, it has an up-and-down hinge mechanism and an opening / closing body, and first put a shaft in a sufficiently large hole in the lower hinge to temporarily support the opening / closing body, and after aligning the upper hinge in this state, By rotating the opening / closing body, the opening / closing body is guided to the positioning position, and the upper and lower hinges can be easily fitted.

特表２００１−５２５９９７号公報JP-T-2001-525997 特開２００６−２３７２８７号公報JP 2006-237287 A 特開２００２−３０６７８４号公報JP 2002-306784 A

特許文献１に示される位置決め構造では、複数の突起とスロットの組み合わせにより、リング部材を高精度に位置決め可能であるとともに温度変化が与えられたとしても常にリング部材の中心軸を基準として熱膨張・収縮し、かつこの際、突起とスロットの間に大きな負荷が生じることもない。しかし全てのスロットに全ての突起を同時に挿入してリング部材を載置する際に必要な精度は最終的な位置決め精度と同じであり、温度変化の大きい使用条件下で高い精度での位置決めを要求する際には、リング部材を搬送して設置する際に困難な場合である。   In the positioning structure shown in Patent Document 1, the ring member can be positioned with high accuracy by a combination of a plurality of protrusions and slots, and even if a temperature change is given, the thermal expansion It contracts, and at this time, a large load is not generated between the protrusion and the slot. However, the accuracy required to place the ring member by inserting all the projections into all the slots at the same time is the same as the final positioning accuracy, and requires high-accuracy positioning under conditions of large temperature changes. In this case, it is difficult to transport and install the ring member.

特許文献２についても同様に、嵌合完了後の温度上昇については、位置決め溝の形状を工夫して位置決め手段との間に過大な応力が生じないよう考慮されているが、少なくとも常温でそれらを嵌合する際に必要な精度は常温での最終的な位置決め精度と同じであり、高い精度での位置決めを要求する際には設置する際に困難な場合がある。また、特許文献２の形状では温度上昇とともに位置決め構造としての位置決め精度が低下していくという問題がある。   Similarly, in Patent Document 2, the temperature rise after completion of fitting is considered so that excessive stress is not generated between the positioning means by devising the shape of the positioning groove. The accuracy required for mating is the same as the final positioning accuracy at room temperature, and when positioning with high accuracy is required, it may be difficult to install. Further, the shape of Patent Document 2 has a problem that the positioning accuracy as the positioning structure decreases with increasing temperature.

特許文献３では、簡単に嵌合状態を得ることが出来るが、位置決め状態を得るには取付け対象となる開閉体の回転が必要な構造となっている。また、テーパ形状によって滑らせることが前提となっている部分があるが、加熱処理装置内部の部材表面は完全脱脂された清浄表面となっている場合がほとんどで、また雰囲気ガスも酸素等を含まない不活性ガスで満たされている場合があり、これらの場合は一般的な雰囲気下に対して摩擦力が非常に大きいことから、テーパ形状で部材を自重により滑らせて落下させることに頼らない確実な搬送方法が求められる。   In Patent Document 3, a fitting state can be easily obtained, but in order to obtain a positioning state, the opening / closing body to be attached is required to rotate. In addition, there is a part that is supposed to be slid due to the taper shape, but the surface of the member inside the heat treatment apparatus is almost completely degreased and the atmosphere gas contains oxygen etc. In these cases, the frictional force is very large compared to the general atmosphere, so do not rely on the tapered shape to slide the member by its own weight and drop it. A reliable transport method is required.

上記のように気相反応炉などの加熱処理装置において、特に自動搬送を行う場合、温度変化に伴う各部の熱膨張・収縮による被搬送物と載置台との相対位置ズレ量と、搬送機構の停止精度等による被搬送物と載置台との相対位置ズレ量などの和が、被搬送物と載置台との位置決め構造における嵌合隙間量を超えると被搬送物が載置台に乗り上げるなどして搬送不能となる場合がある。このため精度の高い嵌合を行うには、厳密な温度管理が要求されたり搬送機構に過大な高精度が要求されたり、あるいは別途被搬送物と載置台との相対位置のズレ量検出機構を用いて、検出された位置ズレ量に対して被搬送物の設置位置座標をアクティブに変える必要が出てくるなど装置が複雑かつ高価となる問題がある。   In a heat treatment apparatus such as a gas phase reactor as described above, especially when performing automatic conveyance, the relative positional deviation between the object to be conveyed and the mounting table due to thermal expansion / contraction of each part due to temperature change, and the conveyance mechanism If the sum of the relative positional deviation between the transferred object and the mounting table due to stopping accuracy exceeds the fitting gap in the positioning structure between the transferred object and the mounting table, the transferred object will run on the mounting table. It may become impossible to carry. For this reason, in order to perform highly accurate fitting, strict temperature control is required, excessive high accuracy is required for the transport mechanism, or a mechanism for detecting a deviation amount of the relative position between the object to be transported and the mounting table is separately provided. However, there is a problem that the apparatus becomes complicated and expensive because it is necessary to actively change the installation position coordinates of the conveyed object with respect to the detected positional deviation amount.

本発明の加熱処理装置においては、被搬送物を載置するための載置台と、載置台及び被搬送物を加熱する加熱装置を有し、前記載置台及び前記被搬送物には、載置台上で被搬送物を位置決めするための位置決め構造を有し、前記位置決め構造は相互に嵌合する凹形状と凸形状からなり、前記被搬送物、及び被搬送物を載置するための載置台が、前記凹形状と前記凸形状のどちらか片方ずつをそれぞれ有し、前記凹形状は挿入用穴部と位置決め用穴部を有し、前記凸形状は挿入用突起部と位置決め用突起部を有し、前記凸形状は、前記凹形状に充分に嵌合可能な長さを有しており、嵌合深さが浅いと前記挿入用穴部と前記挿入用突起部が嵌合し、さらに深く嵌合すると前記位置決め用穴部と前記位置決め用突起部が嵌合する長さもしくは深さを各部が有し、前記凹形状の穴の深さ方向に対して垂直な面内において、前記位置決め用穴部に前記位置決め用突起部が嵌合したときにおける隙間量は、前記挿入用穴部に前記挿入用突起部が嵌合したときにおける隙間量より小さく、かつ前記面内の特定の位置において前記挿入用穴部と前記挿入用突起部が接触した状態で嵌合深さを深くすると、前記位置決め用穴部と前記位置決め用突起部が嵌合する形状を有することを特徴とする。   In the heat treatment apparatus of the present invention, the apparatus has a mounting table for mounting the object to be transported, and a heating device for heating the mounting table and the object to be transported. A positioning structure for positioning the object to be transported, the positioning structure having a concave shape and a convex shape to be fitted to each other, and the mounting object and the mounting table for mounting the transported object Each has either one of the concave shape and the convex shape, the concave shape has an insertion hole portion and a positioning hole portion, and the convex shape has an insertion protrusion portion and a positioning protrusion portion. And the convex shape has a length that can be sufficiently fitted into the concave shape, and when the fitting depth is shallow, the insertion hole and the insertion protrusion are fitted, When deeply fitted, the length or depth at which the positioning hole and the positioning projection are fitted In the plane perpendicular to the depth direction of the concave hole, the gap amount when the positioning projection is fitted to the positioning hole is the insertion hole. When the insertion depth is smaller in a state where the insertion hole and the insertion protrusion are in contact with each other at a specific position in the plane, the gap is smaller than the gap when the insertion protrusion is fitted, It has a shape in which the positioning hole and the positioning projection are fitted.

この特徴によって、まず十分な隙間量を有する位置で浅い嵌合深さで挿入用穴部と前記挿入用突起部のみを嵌合し、次にそれらを平面方向に相対移動させて、前記挿入用穴部と前記挿入用突起部に加えて前記位置決め用穴部と前記位置決め用突起部も嵌合可能な位置で前記挿入用突起部と前記挿入用穴部との側面同士を接触させ、さらに深く挿入して前記位置決め用穴部と前記位置決め用突起部も嵌合させることで、搬送時の温度によらず位置決め後の突起部と穴部の相対位置を安定させることが可能で、より高精度な位置決めが可能になる。   By this feature, first, only the insertion hole and the insertion protrusion are fitted at a position having a sufficient gap amount with a shallow fitting depth, and then they are relatively moved in the plane direction, so that the insertion In addition to the hole and the insertion projection, the side surfaces of the insertion projection and the insertion hole are brought into contact with each other at a position where the positioning hole and the positioning projection can be fitted. By inserting and fitting the positioning hole and the positioning protrusion, the relative position of the protrusion and hole after positioning can be stabilized regardless of the temperature during transport. Positioning becomes possible.

また本発明の加熱処理装置においては、前記位置決め構造における凸形状が、前記挿入用突起と前記位置決め用突起を兼ねる突起により形成されていることを特徴とする。   In the heat treatment apparatus of the present invention, the convex shape in the positioning structure is formed by a projection that serves as the insertion projection and the positioning projection.

この特徴によって、前記凸形状における前記挿入用突起部と位置決め用突起部との間の位置関係に加工誤差が生じる余地はなく、加工が比較的簡単でかつ形状精度が得られやすく、それらを用いて簡単に高精度の位置決めを実現できる効果が得られる。   Due to this feature, there is no room for processing errors in the positional relationship between the insertion protrusions and positioning protrusions in the convex shape, the processing is relatively easy, and the shape accuracy is easily obtained. Thus, it is possible to easily achieve highly accurate positioning.

また本発明の加熱処理装置においては、被搬送物と載置台とは、位置決め構造を２箇所に有し、第１の位置決め構造と第２の位置決め構造は嵌合方向が同一で同時に嵌合可能であり、前記第１の位置決め構造及び第２の位置決め構造はそれぞれ請求項１〜２に記載の位置決め構造であり、前記第２の位置決め構造における位置決め用穴部と位置決め用突起部の嵌合形状は、前記第１の位置決め構造における位置決め用穴部と位置決め用突起部の嵌合形状に対して、嵌合方向への投影図における第１の位置決め構造と第２の位置決め構造を結ぶ軸方向の隙間量が大きいことを特徴とする。   Moreover, in the heat processing apparatus of this invention, a to-be-conveyed object and a mounting base have positioning structure in two places, and the 1st positioning structure and the 2nd positioning structure can be fitted simultaneously with the same fitting direction. Each of the first positioning structure and the second positioning structure is the positioning structure according to claim 1, and the fitting shape of the positioning hole and the positioning protrusion in the second positioning structure. Is the axial direction connecting the first positioning structure and the second positioning structure in the projection view in the fitting direction with respect to the fitting shape of the positioning hole portion and the positioning projection portion in the first positioning structure. The gap amount is large.

この特徴によって、挿入用突起部と挿入用穴部間の位置関係を平面方向に加えて回転方向も高精度に拘束することを簡単に実現できる。また第１の位置決め構造と第２の位置決め構造との間の距離に対して特に高い加工精度や温度管理を必要とせずに、被搬送物と載置台との間の位置関係を平面方向に加えて回転方向も高精度に拘束することを簡単に実現できる。   With this feature, it is possible to easily realize that the positional relationship between the insertion projection and the insertion hole is constrained with high accuracy in addition to the planar direction. In addition, the positional relationship between the object to be transported and the mounting table is added in the plane direction without requiring particularly high processing accuracy and temperature control with respect to the distance between the first positioning structure and the second positioning structure. Therefore, it is possible to easily restrain the rotational direction with high accuracy.

また本発明の加熱処理装置においては、複数の被搬送物を載置可能な載置台と、前記載置台を回転させる回転機構を有し、前記位置決め構造により前記複数の被搬送物が前記回転機構の回転軸を中心に同心円状に載置されることを特徴とする。   Moreover, in the heat processing apparatus of this invention, it has a mounting base which can mount a several to-be-conveyed object, and the rotation mechanism which rotates the said mounting base, The said to-be-conveyed object is said rotation mechanism by the said positioning structure. It is characterized by being placed concentrically around the rotation axis.

この特徴によって、特定のサイクル動作で１個の被搬送物を位置決めして載置するたびに回転機構を回転して載置台上の異なる載置部へ載置台を回転移動させることにより、同じサイクル動作の繰返しにより連続して次々と被搬送物を載置することを簡単に行うことができる。   With this feature, the same cycle can be obtained by rotating the rotation mechanism to a different mounting portion on the mounting table by rotating the rotating mechanism each time one object is positioned and mounted in a specific cycle operation. It is possible to simply place the objects to be conveyed one after another by repeating the operation.

また本発明の加熱処理装置においては、前記凹形状の穴の深さ方向に対して垂直な面内において、前記挿入用穴部は前記回転機構の回転軸からの距離とともに拡大する部分を有し、前記挿入用穴部と前記挿入用突起部が接触した状態で嵌合深さを深くすると前記位置決め用穴部と前記位置決め用突起部が嵌合可能である前記特定の位置が、前記挿入用穴部のうち前記回転機構の回転軸に最も近い位置であることを特徴とする。   In the heat treatment apparatus of the present invention, the insertion hole has a portion that expands with a distance from the rotation axis of the rotation mechanism in a plane perpendicular to the depth direction of the concave hole. When the insertion depth is increased in a state where the insertion hole and the insertion protrusion are in contact with each other, the specific position where the positioning hole and the positioning protrusion can be fitted is the insertion position. It is a position closest to the rotation axis of the rotation mechanism in the hole.

この特徴によって、前記挿入用穴部と前記挿入用突起部とが嵌合したいずれの被搬送物も、中心軸へ向かって移動させることで前記位置決め用穴部と前記位置決め用突起部とが簡単に嵌合可能となる。また、中心軸へ向かって押すことに伴い回転機構に対して余計な回転トルクを与えることも防止できる。   This feature makes it easy to move the positioning hole and the positioning protrusion by moving any object to which the insertion hole and the insertion protrusion are fitted toward the central axis. Can be fitted. Further, it is possible to prevent an extra rotational torque from being applied to the rotation mechanism as it is pushed toward the central axis.

また本発明の加熱処理装置においては、前記複数の被搬送物は前記回転機構の回転軸を中心に等角度ピッチに載置され、前記挿入用穴部が前記回転機構の回転軸からの距離とともに拡大する部分が直線的に拡大し、前記直線的に拡大する部分の開き角が、３６０度を被搬送物の数で割った角度以下であることを特徴とする。   In the heat treatment apparatus of the present invention, the plurality of objects to be conveyed are placed at an equiangular pitch around the rotation axis of the rotation mechanism, and the insertion hole portion has a distance from the rotation axis of the rotation mechanism. The expanding portion is linearly expanded, and the opening angle of the linearly expanding portion is equal to or less than an angle obtained by dividing 360 degrees by the number of objects to be conveyed.

この特徴によって、特に被搬送物が３６０度を被搬送物の数で割った角度以下の形状を有する場合には、前記挿入用穴部と前記挿入用突起部とが嵌合したいずれの被搬送物も、中心軸へ向かって移動させる際に、隣り合う被搬送物に余計な力を与えることなく、挿入用穴部が挿入用突起部をガイドすることで位置決め用穴部と位置決め用突起部を嵌合させることができる。   With this feature, in particular, when the object to be conveyed has a shape equal to or smaller than an angle obtained by dividing 360 degrees by the number of objects to be conveyed, any object to be conveyed in which the insertion hole and the protrusion for insertion are fitted is used. When moving toward the center axis, the positioning hole and the positioning protrusion are fitted by guiding the insertion protrusion by the insertion hole without applying an extra force to the adjacent conveyed object. Can be combined.

また本発明の加熱処理装置においては、被搬送物を保持する保持機構と、前記保持機構を前記位置決め構造の嵌合方向に移動させる昇降機構と、前記嵌合方向とは異なる方向に移動させる移動機構とからなる搬送機構とを有する。   In the heat treatment apparatus of the present invention, a holding mechanism that holds the object to be conveyed, a lifting mechanism that moves the holding mechanism in the fitting direction of the positioning structure, and a movement that moves the holding mechanism in a direction different from the fitting direction. A transport mechanism including the mechanism.

この特徴によって、搬送装置もしくは処理装置の温度変化や動作精度によらず、安定した位置決め精度で運転が可能である効果を得ることができる。   With this feature, it is possible to obtain an effect that the operation can be performed with a stable positioning accuracy regardless of the temperature change or the operation accuracy of the transfer device or the processing device.

本発明の加熱処理装置は、被搬送物を載置するための載置台と、載置台及び被搬送物を加熱する加熱装置を有し、前記載置台及び前記被搬送物には、載置台上で被搬送物を位置決めするための位置決め構造を有し、前記位置決め構造は相互に嵌合する凹形状と凸形状からなり、前記被搬送物、及び被搬送物を載置するための載置台が、前記凹形状と前記凸形状のどちらか片方ずつをそれぞれ有し、前記凹形状は挿入用穴部と位置決め用穴部を有し、前記凸形状は挿入用突起部と位置決め用突起部を有し、前記凸形状は、前記凹形状に充分に嵌合可能な長さを有しており、嵌合深さが浅いと前記挿入用穴部と前記挿入用突起部が嵌合し、さらに深く嵌合すると前記位置決め用穴部と前記位置決め用突起部が嵌合する長さもしくは深さを各部が有し、前記凹形状の穴の深さ方向に対して垂直な面内において、前記位置決め用穴部に前記位置決め用突起部が嵌合したときにおける隙間量は、前記挿入用穴部に前記挿入用突起部が嵌合したときにおける隙間量より小さく、かつ前記面内の特定の位置において前記挿入用穴部と前記挿入用突起部が接触した状態で嵌合深さを深くすると、前記位置決め用穴部と前記位置決め用突起部が嵌合する形状を有する。   The heat treatment apparatus of the present invention has a mounting table for mounting the object to be transported, and a heating device for heating the mounting table and the object to be transported. A positioning structure for positioning the object to be transported, the positioning structure having a concave shape and a convex shape that are fitted to each other, and a mounting table for mounting the transported object and the transported object. Each of the concave shape and the convex shape, the concave shape has an insertion hole and a positioning hole, and the convex shape has an insertion projection and a positioning projection. The convex shape has a length that can be sufficiently fitted into the concave shape, and if the fitting depth is shallow, the insertion hole and the insertion projection are fitted, and the deeper When fitted, each part has a length or depth at which the positioning hole and the positioning projection are fitted. In the plane perpendicular to the depth direction of the concave hole, the amount of gap when the positioning projection is fitted into the positioning hole is calculated by inserting the insertion projection into the insertion hole. When the fitting hole is deeper in a state where the insertion hole and the insertion protrusion are in contact with each other at a specific position within the plane, the positioning hole And the positioning protrusion.

被搬送物の載置台上での最終的な位置決め精度は、位置決め用穴と位置決め用突起が嵌合したときの隙間量である。搬送時の温度変化に伴う載置台や搬送機構の熱膨張・収縮により、たとえこの隙間量を上回る位置変化が生じても、挿入用穴と挿入用突起さえ嵌合すれば、被搬送物と載置台とを特定の方向へ相対移動させることによって位置決め用穴と位置決め用突起を嵌合させることができ、結果高精度な嵌合を実現できる効果が得られる。   The final positioning accuracy of the object to be transported on the mounting table is the gap amount when the positioning hole and the positioning protrusion are fitted. Even if a position change exceeding this gap occurs due to thermal expansion / contraction of the mounting table or the transport mechanism due to temperature changes during transport, as long as the insertion holes and insertion protrusions are fitted, they can be placed on the transported object. By relatively moving the pedestal in a specific direction, the positioning hole and the positioning projection can be fitted, and as a result, an effect of realizing a highly accurate fitting can be obtained.

本発明の第１実施形態に係る上面図及び側面図である。It is the top view and side view which concern on 1st Embodiment of this invention. 本発明の第１実施形態における基板トレイ２の上面図、及び側面図である。It is the upper side figure and side view of the board | substrate tray 2 in 1st Embodiment of this invention. 本発明の第１実施形態における載置台３の上面図、及び側面図である。It is the upper side figure and the side view of the mounting base 3 in 1st Embodiment of this invention. 本発明の第１実施形態における搬送動作を表す上面図及び側面図である。It is the top view and side view showing the conveyance operation in 1st Embodiment of this invention. 本発明の第１実施形態における搬送動作を表す上面図及び側面図である。It is the top view and side view showing the conveyance operation in 1st Embodiment of this invention. 本発明の第１実施形態における搬送動作を表す上面図及び側面図である。It is the top view and side view showing the conveyance operation in 1st Embodiment of this invention. 本発明の第１実施形態における搬送動作を表す上面図及び側面図である。It is the top view and side view showing the conveyance operation in 1st Embodiment of this invention. 本発明の第１実施形態における搬送動作を表す上面図及び側面図である。It is the top view and side view showing the conveyance operation in 1st Embodiment of this invention. 本発明の第１実施形態に類似する位置決め構造を表す上面図及び側面図である。It is the top view and side view showing the positioning structure similar to 1st Embodiment of this invention. 本発明の第１実施形態に類似する位置決め構造を表す上面図及び側面図である。It is the top view and side view showing the positioning structure similar to 1st Embodiment of this invention. 本発明の第１実施形態に類似する位置決め構造を表す上面図及び側面図である。It is the top view and side view showing the positioning structure similar to 1st Embodiment of this invention. 本発明の第１実施形態に類似する位置決め構造を表す上面図及び側面図である。It is the top view and side view showing the positioning structure similar to 1st Embodiment of this invention. 本発明の第１実施形態に類似する位置決め構造を表す上面図及び側面図である。It is the top view and side view showing the positioning structure similar to 1st Embodiment of this invention. 本発明の第１実施形態に類似する位置決め構造を表す上面図及び側面図である。It is the top view and side view showing the positioning structure similar to 1st Embodiment of this invention. 本発明の第１実施形態に類似する位置決め構造を表す上面図及び側面図である。It is the top view and side view showing the positioning structure similar to 1st Embodiment of this invention. 本発明の第２実施形態に係る上面図及び側面図である。It is the top view and side view which concern on 2nd Embodiment of this invention. 本発明の第３実施形態における搬送前及び搬送後の状態を示す上面図及び側面図である。It is the upper side figure and side view which show the state before conveyance in the 3rd Embodiment of this invention, and after conveyance. 本発明の第３実施形態における搬送動作を示す上面図及び側面図である。It is the upper side figure and side view which show the conveyance operation in 3rd Embodiment of this invention.

以下、図面を参照しながら本発明を実施するための形態を、複数の形態について説明する。以下の説明においては、各形態に先行する形態ですでに説明している事項に対応している部分には同一の参照符を付し、重複する説明を略する場合がある。構成の一部のみを説明している場合、構成の他の部分は、先行して説明している形態と同様とする。実施の各形態で具体的に説明している部分の組合せばかりではなく、特に組合せに支障が生じなければ、実施の形態同士を部分的に組合せることも可能である。またそれぞれの実施形態は、本発明に係る技術を具体化するために例示するものであり、本発明の技術的範囲を限定するものではない。本発明に係る技術内容は、特許請求の範囲に記載された技術的範囲内において、種々の変更を加えることが可能である。以下の説明は、搬送装置、及び処理装置についての説明をも含む。
（第１実施形態）
本発明の第１実施形態に係る位置決め構造を有した搬送装置の上面図を図１（ａ）に、側面図を図１（ｂ）に示す。本発明の第１実施形態に係る搬送装置は、被搬送物を載置台上に搬送し載置した際に所定の範囲に被搬送物を拘束する。 Hereinafter, a plurality of embodiments for carrying out the present invention will be described with reference to the drawings. In the following description, parts corresponding to matters already described in the forms preceding each form may be denoted by the same reference numerals, and overlapping descriptions may be omitted. When only a part of the configuration is described, the other parts of the configuration are the same as those described in the preceding section. Not only the combination of the parts specifically described in each embodiment, but also the embodiments can be partially combined as long as the combination does not hinder. Moreover, each embodiment is illustrated in order to embody the technique which concerns on this invention, and does not limit the technical scope of this invention. The technical contents according to the present invention can be variously modified within the technical scope described in the claims. The following description includes descriptions of the transport device and the processing device.
(First embodiment)
FIG. 1A shows a top view and FIG. 1B shows a side view of a transport apparatus having a positioning structure according to the first embodiment of the present invention. The transport apparatus according to the first embodiment of the present invention restrains the transported object within a predetermined range when the transported object is transported and placed on the mounting table.

本発明の第１実施形態に係る気相成長装置は、被搬送物である基板トレイ２と、基板トレイ２を載置する載置台３とを含んで構成される。載置台３は基板トレイ２の平面中心で回転可能となるよう回転機構４上に取り付けられており、載置台３の裏面には載置台３越しに基板トレイ２上の窪み２ａに収められた基板５を加熱するための加熱機構６が設けられている。上記構成要素は密閉されたステンレス製のチャンバ７内に収められており、同チャンバはガスの導入口８と排出口９および開閉可能な開口部１０が設けられていて、成膜前後の基板を載置した基板トレイ２は搬送機構１１により前記開口部１０を介して出し入れされる。   The vapor phase growth apparatus according to the first embodiment of the present invention includes a substrate tray 2 that is a transported object and a mounting table 3 on which the substrate tray 2 is mounted. The mounting table 3 is mounted on a rotating mechanism 4 so as to be rotatable about the plane center of the substrate tray 2, and the substrate stored in the recess 2 a on the substrate tray 2 is placed on the back surface of the mounting table 3 through the mounting table 3. A heating mechanism 6 for heating 5 is provided. The above components are housed in a hermetically sealed stainless steel chamber 7, which is provided with a gas inlet 8, a gas outlet 9, and an openable / closable opening 10. The placed substrate tray 2 is taken in and out by the transport mechanism 11 through the opening 10.

載置台３上に基板トレイ２を設置後、前記開口部１０は閉じられ、窒素置換された後、加熱機構６により８００〜１４００℃程度の高温に加熱された基板５表面に各種プロセスガスを供給することにより基板表面近傍で気相反応を生じさせ、基板表面にプロセスガスに応じた任意の組成の結晶薄膜を成長させることができる。成膜後の基板トレイ２は前記搬送機構１１により取り出されるが、装置のスループット向上のためにまだ数百度の高温のうちに取り出されることもある。   After the substrate tray 2 is placed on the mounting table 3, the opening 10 is closed and purged with nitrogen, and then various process gases are supplied to the surface of the substrate 5 heated to a high temperature of about 800 to 1400 ° C. by the heating mechanism 6. By doing so, a gas phase reaction is caused in the vicinity of the substrate surface, and a crystal thin film having an arbitrary composition corresponding to the process gas can be grown on the substrate surface. The substrate tray 2 after film formation is taken out by the transport mechanism 11, but may be taken out at a high temperature of several hundred degrees to improve the throughput of the apparatus.

搬送機構１１は、基板トレイ２の上面を真空吸着により保持する保持機構１２と、保持機構１２を上昇／下降させる昇降機構、および平面移動させる移動機構部を有する。保持機構１２は無負荷あるいは低負荷状態では決められた位置に停止するが、閾値以上の負荷がかかると平面方向へスライドするスライド機構１３を介して搬送アームに取り付けられている。本実施例ではスライド機構１３は直動ガイドレール１３ａとバネ１３ｂにより構成されており、通常はバネ１３ｂにより常時片側のストッパに押し当てられているが、バネによる与圧以上の力を与えられるとスライドを開始する。   The transport mechanism 11 includes a holding mechanism 12 that holds the upper surface of the substrate tray 2 by vacuum suction, an elevating mechanism that moves the holding mechanism 12 up and down, and a moving mechanism that moves the plane. The holding mechanism 12 stops at a predetermined position in a no-load or low-load state, but is attached to the transport arm via a slide mechanism 13 that slides in the plane direction when a load exceeding a threshold value is applied. In this embodiment, the slide mechanism 13 is composed of a linear guide rail 13a and a spring 13b. Normally, the slide mechanism 13 is constantly pressed against a stopper on one side by the spring 13b, but when a force greater than the pressure applied by the spring is applied. Start the slide.

図２（ａ）、図２（ｂ）、図３（ａ）、図３（ｂ）は、それぞれ基板トレイ２と載置台３の上面図、及び側面図を示している。基板トレイ２と載置台３とは互いに嵌合する突起部と穴部からなる位置決め構造を有し、本実施例では基板トレイ２に突起部として凸形状１５が設けられており、載置台３に穴部として凹形状１６が設けられている。載置台３は載置面３ａが水平になるよう設置されており、基板トレイ２の設置面２ｂもそれに倣うよう搬送され、かつ設置される。図１で示されるように搬送機構１１は保持し搬送してきた基板トレイ２を、凸形状１５と凹形状１６からなる位置決め構造に基づいて位置決めし、載置台３上の所定の位置に設置する。   FIG. 2A, FIG. 2B, FIG. 3A, and FIG. 3B show a top view and a side view of the substrate tray 2 and the mounting table 3, respectively. The substrate tray 2 and the mounting table 3 have a positioning structure composed of a protrusion and a hole that are fitted to each other. In this embodiment, the substrate tray 2 is provided with a convex shape 15 as a protrusion, and the mounting table 3 A concave shape 16 is provided as a hole. The mounting table 3 is installed such that the mounting surface 3a is horizontal, and the installation surface 2b of the substrate tray 2 is also transported and installed so as to follow it. As shown in FIG. 1, the transport mechanism 11 positions and holds the substrate tray 2 that has been held and transported based on a positioning structure composed of a convex shape 15 and a concave shape 16, and installs the substrate tray 2 at a predetermined position on the mounting table 3.

基板トレイ２に設けられた凸形状１５は挿入用突起部１５ａと位置決め用突起部１５ｂとを含んで構成される。基板トレイ２の下面である設置面２ｂから下向きに円柱状の挿入用突起１５ａが設けられている。また挿入用突起１５ａ、位置決め用突起１５ｂはともに円柱状であり、前記挿入用突起１５ａの下面である先端面からさらに下向きに位置決め用突起１５ｂが設けられている。前記位置決め用突起１５ｂの直径は前記挿入用突起１５ａの直径よりも小さく、かつ前記位置決め用突起１５ｂの中心軸は前記挿入用突起１５ａの中心軸および基板トレイ２の中心軸と一致している。すなわち挿入用突起部１５ａの底部に位置決め用突起部１５ｂを有し、凸形状１５の円柱軸方向への投影図において挿入用突起部１５ａは位置決め用突起部１５ｂを内包する構造となっている。   The convex shape 15 provided on the substrate tray 2 includes an insertion protrusion 15a and a positioning protrusion 15b. A cylindrical insertion protrusion 15a is provided downward from the installation surface 2b which is the lower surface of the substrate tray 2. Both the insertion protrusion 15a and the positioning protrusion 15b are cylindrical, and the positioning protrusion 15b is provided further downward from the tip surface which is the lower surface of the insertion protrusion 15a. The diameter of the positioning protrusion 15b is smaller than the diameter of the insertion protrusion 15a, and the central axis of the positioning protrusion 15b coincides with the central axis of the insertion protrusion 15a and the central axis of the substrate tray 2. That is, it has a positioning projection 15b at the bottom of the insertion projection 15a, and the insertion projection 15a includes the positioning projection 15b in the projection of the convex shape 15 in the cylindrical axis direction.

また載置台３に設けられた凹形状１６は挿入用穴部１６ａと位置決め用穴部１６ｂとを含んで構成される。基板トレイ２を載置する載置面３ａに下向きに、大小の円形、すなわち大穴部１６ｃと小穴部１６ｄを接線１６ｅでつないだ形状の断面を有する挿入用穴１６ａが設けられており、前記挿入用穴１６ａの底面からさらに下向きに円形の断面を有する位置決め用穴１６ｂが設けられている。前記位置決め用穴部１６ｂの中心軸は前記挿入用穴部１６ａの断面を形成する大穴部と小穴部のうち小穴部の中心軸と一致している。すなわち挿入用穴部１６ａの底部に位置決め用穴部１６ｂを有し、凹形状１６の穴の深さ方向への投影図において、挿入用穴部１６ａは前記位置決め用穴部１６ｂを内包する構造となっている。また小穴部の円の径は挿入用突起１５ａの径とほぼ同一であるが後述の位置決め用突起１５ｂと位置決め用穴１６ｂとの間の隙間量と同じだけ挿入用穴の小穴部のほうが挿入用突起の径よりも大きい。   The concave shape 16 provided on the mounting table 3 includes an insertion hole 16a and a positioning hole 16b. The mounting surface 3a on which the substrate tray 2 is placed is provided with an insertion hole 16a having a large and small circular shape, that is, a cross section in which the large hole portion 16c and the small hole portion 16d are connected by a tangential line 16e. A positioning hole 16b having a circular cross section is further provided downward from the bottom surface of the hole 16a. The central axis of the positioning hole portion 16b coincides with the central axis of the small hole portion of the large hole portion and the small hole portion that form the cross section of the insertion hole portion 16a. That is, it has a positioning hole 16b at the bottom of the insertion hole 16a, and the insertion hole 16a includes the positioning hole 16b in the projection view of the concave shape 16 in the depth direction. It has become. The diameter of the circle of the small hole portion is substantially the same as the diameter of the insertion projection 15a, but the small hole portion of the insertion hole is for insertion as much as the gap amount between the positioning projection 15b and the positioning hole 16b described later. It is larger than the diameter of the protrusion.

図４から図８は、図１の搬送装置にて基板トレイを載置台上へ位置決めして設置する手順を示すものである。各図の（ａ）は上面図を、（ｂ）、（ｃ）は側面図を示している。また図４から図８中では基板トレイと載置台、及び搬送機構以外の構成要素は図示することを省略している。さらに図６（ａ）、図７（ａ）では基板トレイの構成要素中、挿入用突起部以外を省略している。また図８（ａ）では、基板トレイの構成要素中、位置決め用突起部以外を省略している。おおまかには、『１次移動』→『１次下降』→『２次移動』→『２次下降』の順に動作が行われる。以下に図４から図８の内容を説明する。   4 to 8 show a procedure for positioning and setting the substrate tray on the mounting table by the transfer apparatus of FIG. (A) of each figure has shown the top view, (b), (c) has shown the side view. Further, in FIG. 4 to FIG. 8, illustration of components other than the substrate tray, the mounting table, and the transport mechanism is omitted. Furthermore, in FIG. 6A and FIG. 7A, components other than the insertion projection are omitted from the components of the substrate tray. In FIG. 8A, components other than the positioning projections are omitted from the components of the substrate tray. Roughly, the operation is performed in the order of “primary movement” → “primary descent” → “secondary movement” → “secondary descent”. The contents of FIGS. 4 to 8 will be described below.

まず図４（ａ）（ｂ）では、基板トレイ上面でかつ基板面でない外周部を搬送機構１１の保持機構１２により真空吸着された状態で、載置台の上方を『１次移動』してきた基板トレイは、図５（ａ）（ｂ）で示す通り、挿入用穴の断面を形成する大穴部と小穴部のうち大穴部の中心軸と挿入用突起の中心軸が一致する位置を目標として載置台上空でいったん停止される。このとき基板トレイ搬送は常に室温下で行われるわけではなく、前述のように装置のスループット向上のため比較的高温下で行われることもあり、このような場合には搬送機構や載置台の各部の伸びにより相対位置のズレが生じる。加えて吸着時の位置のばらつきや、水平に移動／停止する移動機構の停止精度内の停止位置ばらつきなどにより目標位置からのズレがさらに生じる。   First, in FIGS. 4A and 4B, the substrate that has been “primary moved” above the mounting table in a state where the outer peripheral portion that is the upper surface of the substrate tray and is not the substrate surface is vacuum-sucked by the holding mechanism 12 of the transport mechanism 11. As shown in FIGS. 5 (a) and 5 (b), the tray is loaded with the position where the central axis of the large hole portion and the central axis of the insertion protrusion of the large hole portion and small hole portion forming the cross section of the insertion hole coincide with each other. It stops once over the table. At this time, the substrate tray is not always transported at room temperature, but may be performed at a relatively high temperature to improve the throughput of the apparatus as described above. In such a case, each part of the transport mechanism and the mounting table is used. The relative position shifts due to the elongation of. In addition, deviation from the target position further occurs due to variations in the position at the time of suction and variations in the stop position within the stop accuracy of the moving mechanism that moves / stops horizontally.

しかし前記挿入用穴の大穴部の径は前記挿入用突起の径よりも充分に大きい。またその隙間量は温度変化に伴う各部の熱膨張・収縮による被搬送物と載置台との相対位置ズレ量と、搬送機構の停止精度等による被搬送物と載置台との相対位置ズレ量との和よりも大きくなるよう製作されている。そのため次のステップとして図６（ａ）（ｂ）で示す通り、昇降機構により挿入用突起と挿入用穴のみが嵌合し、位置決め用穴と位置決め用突起はまだ嵌合しない高さまで基板トレイを『１次下降』させた際に、前記挿入用穴と前記挿入用突起とが乗り上げたり衝突したりすることはない。   However, the diameter of the large hole portion of the insertion hole is sufficiently larger than the diameter of the insertion protrusion. In addition, the amount of the gap is the amount of relative positional deviation between the object to be transported and the mounting table due to thermal expansion / contraction of each part due to temperature change, and the amount of relative position deviation between the object to be transported and the mounting table due to the stopping accuracy of the transport mechanism, It is made to be larger than the sum of Therefore, as shown in FIGS. 6A and 6B, as the next step, only the insertion projection and the insertion hole are fitted by the lifting mechanism, and the substrate tray is moved to a height where the positioning hole and the positioning projection are not yet fitted. When the “primary lowering” is performed, the insertion hole and the insertion protrusion do not ride on or collide with each other.

続いて図７（ａ）（ｂ）で示す通り、前記のように挿入用突起のみが嵌合する高さを維持したまま、移動機構によりさらに水平方向へ基板トレイを『２次移動』させる。このときの移動方向は、前記挿入用穴の断面を形成する大穴部と小穴部のうち大穴部の中心から小穴部の中心へ向かう方向に設定される。『２次移動』中には、挿入用穴部の断面を形成する大穴部と小穴部を結ぶ軸上に挿入用突起の中心軸が位置していなくても、挿入用穴部の断面を形成する大穴部と小穴部を結ぶ接線部分に相当する壁面が挿入用突起の側面に接触しながらガイドし、挿入用突起は徐々に挿入用穴部の小穴部と中心軸が一致する位置へと移動する。移動量は、挿入用突起が挿入用穴の大穴部のどの位置に挿入されても、平行移動により挿入用突起が挿入用穴部の小穴部に一致し突起の側面と穴の壁面が移動方向の前方で接触する状態、すなわち挿入用穴部の小穴部で挿入用突起の側面と穴の壁面が接触する状態が得られるよう充分な全移動量が与えられる。移動開始から突起の側面と穴の壁面が移動方向前方で接触する状態となるまでの移動量は上記全移動量よりも小さいので、移動中のある時点で必ず前記接触状態が得られることとなり、前記接触状態となって以降は、挿入用穴の壁面から挿入用突起の側面に与えられた反力が保持機構を支持するスライド機構に与えられてスライドすることで、『２次移動』停止まで前記接触状態が維持される。このときスライド機構は『２次移動』方向にスライド可能なように取付けられている。   Subsequently, as shown in FIGS. 7A and 7B, the substrate tray is further “secondarily moved” in the horizontal direction by the moving mechanism while maintaining the height at which only the insertion protrusion is fitted as described above. The moving direction at this time is set in a direction from the center of the large hole portion toward the center of the small hole portion among the large hole portion and the small hole portion forming the cross section of the insertion hole. During “secondary movement”, the cross section of the insertion hole is formed even if the central axis of the insertion protrusion is not located on the axis connecting the large hole and the small hole forming the cross section of the insertion hole. The wall surface corresponding to the tangent line connecting the large hole part and small hole part is guided while contacting the side surface of the insertion protrusion, and the insertion protrusion gradually moves to a position where the center axis coincides with the small hole part of the insertion hole part. To do. Regardless of where the insertion protrusion is inserted into the large hole part of the insertion hole, the amount of movement is parallel, and the insertion protrusion matches the small hole part of the insertion hole part. A sufficient amount of movement is provided so that a state in which the side surface of the insertion projection and the wall surface of the hole are in contact with each other is obtained. Since the movement amount from the start of movement until the side surface of the protrusion and the wall surface of the hole come into contact with each other in the movement direction is smaller than the total movement amount, the contact state is always obtained at some point during movement, After the contact state is reached, the reaction force applied from the wall surface of the insertion hole to the side surface of the insertion projection is applied to the slide mechanism that supports the holding mechanism until the “secondary movement” stops. The contact state is maintained. At this time, the slide mechanism is mounted so as to be slidable in the “secondary movement” direction.

前述のように、本発明の第一実施形態では位置決め用突起の中心軸は前記挿入用突起の中心軸と一致しており、位置決め用穴の中心軸は前記挿入用穴の断面を形成する大穴部と小穴部のうち小穴部の中心軸と一致しており、かつ小穴部の径は挿入用突起の径とほぼ同一であり、かつ位置決め用穴は位置決め用突起と嵌合した際には位置決め用突起を所定の範囲内に拘束するための隙間量を有するよう製作されている。このことから、前記接触状態を維持して『２次移動』を停止した後に昇降機構により基板トレイをさらに位置決め用突起と位置決め用穴が嵌合する高さまで『２次下降』させた際に、前記位置決め用穴と前記位置決め用突起とが乗り上げたり衝突したりすることはない。ただし本第一実施形態では位置決め用穴の中心軸は前記挿入用穴の断面を形成する大穴部と小穴部のうち小穴部の中心軸と一致している例を示したが、これは必須ではない。位置決め用突起の中心軸と前記挿入用突起の中心軸の相対位置が、位置決め用穴の中心軸と前記挿入用穴の断面を形成する大穴部と小穴部のうち小穴部の中心軸との相対位置と同じであれば、同様の効果を得ることができる。その後図８（ａ）（ｂ）に示す通り、そのまま昇降機構による『２次下降』を継続し、基板トレイの下面である設置面と載置台の上面である載置面が接触する高さで昇降機構を停止させることで、基板トレイの載置台への載置が完了する。   As described above, in the first embodiment of the present invention, the central axis of the positioning protrusion coincides with the central axis of the insertion protrusion, and the central axis of the positioning hole is a large hole that forms a cross section of the insertion hole. The diameter of the small hole portion is the same as the diameter of the insertion protrusion, and the positioning hole is positioned when mated with the positioning protrusion. It is manufactured to have a gap amount for restraining the projection for use within a predetermined range. Therefore, after the “secondary movement” is stopped while maintaining the contact state, the substrate tray is further “secondarily lowered” to a height at which the positioning projection and the positioning hole are fitted by the lifting mechanism. The positioning hole and the positioning projection do not ride on or collide with each other. However, in the first embodiment, an example in which the central axis of the positioning hole coincides with the central axis of the small hole portion out of the large hole portion and the small hole portion forming the cross section of the insertion hole is shown. Absent. The relative position between the central axis of the positioning projection and the central axis of the insertion projection is relative to the central axis of the positioning hole and the central axis of the small hole portion of the large hole portion and small hole portion forming the cross section of the insertion hole. If it is the same as the position, the same effect can be obtained. Thereafter, as shown in FIGS. 8A and 8B, the “secondary descent” is continued by the elevating mechanism, and the installation surface which is the lower surface of the substrate tray and the mounting surface which is the upper surface of the mounting table are in contact with each other. By stopping the elevating mechanism, the mounting of the substrate tray on the mounting table is completed.

上記載置完了状態では、位置決め用突起と位置決め用穴が所定の隙間量をもって嵌合しており、基板トレイに何らかの平面方向の外力が加えられた場合にも前記位置決め用突起と位置決め用穴の嵌合部に設けられた所定の隙間量以上に移動することはない。前記位置決め時の隙間量は充分に小さく設定することができ高精度な位置決めが容易に実現できる。   In the above-described completed state, the positioning projection and the positioning hole are fitted with a predetermined gap amount, and the positioning projection and the positioning hole are not affected even when an external force in a plane direction is applied to the substrate tray. It does not move beyond the predetermined gap amount provided in the fitting portion. The gap amount at the time of positioning can be set sufficiently small, and highly accurate positioning can be easily realized.

ここで上記例では、基板トレイと載置台とは互いに嵌合する凹凸形状を有し、基板トレイに凸形状が設けられており、載置台に凹形状が設けられているとしたが、逆に基板トレイに凹形状が設けられており、載置台に凸形状が設けられていてもよい。図９（ａ）（ｂ）には、凹形状が設けられた基板トレイの一例の上面図、及び側面図をそれぞれ示す。また図１０（ａ）（ｂ）には、凸形状が設けられた載置台の一例の上面図、及び側面図をそれぞれ示す。   Here, in the above example, the substrate tray and the mounting table have a concavo-convex shape that fits together, the substrate tray is provided with a convex shape, and the mounting table is provided with a concave shape. The substrate tray may be provided with a concave shape, and the mounting table may be provided with a convex shape. FIGS. 9A and 9B respectively show a top view and a side view of an example of a substrate tray provided with a concave shape. FIGS. 10A and 10B are a top view and a side view, respectively, of an example of a mounting table provided with a convex shape.

また上記例では、挿入用突起および位置決め用突起の形状を円柱としたが、任意の形状でもよい。また、挿入用穴は大小の円を接線で結んだ断面形状とし、位置決め用穴は円形の断面形状としたが、前記任意の形状の突起を所定の隙間量で拘束するような任意の形状の穴であってよい。   In the above example, the shape of the insertion protrusion and the positioning protrusion is a cylinder, but may be any shape. Further, the insertion hole has a cross-sectional shape in which large and small circles are connected by a tangent line, and the positioning hole has a circular cross-sectional shape. However, the insertion hole has an arbitrary shape that restrains the protrusion of the arbitrary shape with a predetermined gap amount. It can be a hole.

また上記例では、位置決め用突起の直径は挿入用突起の直径よりも小さいとしたが、位置決め用突起と挿入用突起が同一断面形状のまま連続した形状であってもよい。図１１（ａ）（ｂ）には、位置決め用突起と挿入用突起が同一断面形状のまま連続した形状を有した基板トレイの上面図、及び側面図を、また図１２（ａ）（ｂ）にはそれに用いる載置台の上面図と側面図を示す。この場合、位置決め用突起部が挿入用突起部を兼ねることになるが、詳細は別途、第２実施形態において述べる。   In the above example, the diameter of the positioning protrusion is smaller than the diameter of the insertion protrusion. However, the positioning protrusion and the insertion protrusion may be continuous with the same cross-sectional shape. 11 (a) and 11 (b) are a top view and a side view of a substrate tray in which the positioning protrusion and the insertion protrusion have a continuous shape with the same cross-sectional shape, and FIGS. 12 (a) and 12 (b). Shows a top view and a side view of the mounting table used therefor. In this case, the positioning projection also serves as the insertion projection, but details will be described separately in the second embodiment.

また上記例では、位置決め用突起の直径は挿入用突起の直径よりも小さいとしたが、位置決め用突起の先端に挿入用突起を設け、かつ挿入用突起の直径が位置決め用突起の直径より小さくしてもよい。さらにこのとき、被搬送物の外形が位置決め用突起を兼ねてもよい。   In the above example, the diameter of the positioning protrusion is smaller than the diameter of the insertion protrusion. However, the insertion protrusion is provided at the tip of the positioning protrusion, and the diameter of the insertion protrusion is smaller than the diameter of the positioning protrusion. May be. Further, at this time, the outer shape of the conveyed object may also serve as a positioning protrusion.

また上記例では、『２次移動』中も真空吸着による基板トレイの保持を継続し、『２次移動』中でかつ基板トレイが位置決め完了位置に到達した後に受ける反力はスライド機構が吸収するとしたが、『２次移動』の移動量が小さければ、特にスライド機構を設けず単に吸着パッド等のたわみや吸着パッドと基板トレイとの接触面間のすべりが反力を吸収するとしてもよい。   In the above example, the holding of the substrate tray by vacuum suction is continued during the “secondary movement”, and the reaction force received after the substrate tray reaches the positioning completion position during the “secondary movement” is absorbed by the slide mechanism. However, if the amount of movement of the “secondary movement” is small, the sliding mechanism may not be provided, and the deflection of the suction pad or the slip between the contact surfaces of the suction pad and the substrate tray may absorb the reaction force.

また上記例では、『２次移動』中も真空吸着による基板トレイの保持を継続し、『２次移動』中でかつ基板トレイが位置決め完了位置に到達した後に受ける反力はスライド機構が吸収するとしたが、『１次下降』完了後に真空吸着による基板トレイの保持を解除し、挿入用突起を挿入用穴の底面に載置した状態で、『２次移動』方向における基板トレイの後端をバネ等で直接押しながら『２次移動』を行ってもよい。   In the above example, the holding of the substrate tray by vacuum suction is continued during the “secondary movement”, and the reaction force received after the substrate tray reaches the positioning completion position during the “secondary movement” is absorbed by the slide mechanism. However, after the completion of the “primary descent”, the holding of the substrate tray by vacuum suction is released, and the rear end of the substrate tray in the “secondary movement” direction is placed with the insertion protrusion placed on the bottom surface of the insertion hole. “Secondary movement” may be performed while directly pressing with a spring or the like.

また上記例では、被搬送物を基板トレイとしたが、基板トレイに限らず、その他の炉内部材のいずれであってもよい。   In the above example, the object to be conveyed is the substrate tray. However, the substrate tray is not limited to the substrate tray, and any other in-furnace member may be used.

また上記例では、被搬送物の保持を真空吸着により行っているが、これに限らず、下面を受けるなど他の保持方法であってもよい。   In the above example, the object to be conveyed is held by vacuum suction. However, the holding method is not limited to this, and other holding methods such as receiving the lower surface may be used.

また上記例では、単枚の被搬送物を処理する装置について述べたが、２枚以上の多枚の被搬送物を処理する装置に用いてもよい。   In the above example, an apparatus for processing a single object to be conveyed has been described. However, the apparatus may be used for an apparatus for processing two or more objects to be conveyed.

また上記例では、基板トレイと載置台との間に回転拘束は存在しないが、基板トレイは円形対称の形状であり、その中心軸と位置決め用突起の中心軸とは一致しているため、基板トレイが回転しても装置の運転に影響しない。あるいは、少なくとも位置決め用突起と位置決め用穴の形状を円形でない形状にすることで回転拘束することも可能である。   In the above example, there is no rotational constraint between the substrate tray and the mounting table, but the substrate tray has a circularly symmetric shape, and the central axis thereof coincides with the central axis of the positioning projection. Even if the tray rotates, it does not affect the operation of the device. Alternatively, it is possible to restrict rotation by making the positioning projections and the positioning holes at least non-circular.

また上記例では、凹凸形状をいわゆる『穴』と『突起』と表記したが、前記『穴』や『突起』の形状のうち『２次移動』で接触する可能性のない部分を除去した形状同士の勘合であってももちろんよい。   In the above example, the concave and convex shapes are indicated as so-called “holes” and “projections”, but the shapes that are not likely to contact by “secondary movement” are removed from the shapes of the “holes” and “projections”. Of course, it may be a mutual agreement.

また上記例における『穴』や『突起』は貫通していても貫通していなくてもよい。例えば図１４（ａ）（ｂ）には位置決め用穴が載置台を貫通しておらず、挿入用穴と一体に形成された載置台の上面図、及び側面図を示している。また図１３（ａ）（ｂ）には図１４で示す載置台に最適な基板トレイの上面図と側面図を示している。   In addition, the “hole” and the “projection” in the above example may or may not penetrate. For example, FIGS. 14A and 14B show a top view and a side view of a mounting table in which the positioning holes do not penetrate the mounting table and are formed integrally with the insertion holes. FIGS. 13A and 13B are a top view and a side view of a substrate tray optimal for the mounting table shown in FIG.

また上記を含めた被搬送物形状のバリエーションとして、例えば基板トレイの上面図、側面図はそれぞれ図１５（ａ）（ｂ）に示すようなものがある。
（第２実施形態）
図１６（ａ）（ｂ）は、それぞれ本発明の第２実施形態に係る気相成長装置のＡ−Ａ‘での上面断面図及び側面図である。本発明の第２実施形態に係る搬送装置は、被搬送物を載置台に搬送し載置した際に所定の範囲に被搬送物を拘束する。 Further, as variations of the shape of the conveyed object including the above, for example, a top view and a side view of the substrate tray are as shown in FIGS. 15 (a) and 15 (b), respectively.
(Second Embodiment)
FIGS. 16A and 16B are a top sectional view and a side view, respectively, taken along line AA ′ of the vapor phase growth apparatus according to the second embodiment of the present invention. The transport apparatus according to the second embodiment of the present invention restrains the transported object within a predetermined range when the transported object is transported to and placed on the mounting table.

本発明の第２実施形態に係る気相成長装置は、被搬送物であるフローチャネル２１と、フローチャネル２１を載置するフローチャネル載置台３１とを含んで構成される。ここで述べる相違点以外で第１実施形態と共通の内容については説明を省略する。   The vapor phase growth apparatus according to the second embodiment of the present invention includes a flow channel 21 that is a transfer object and a flow channel mounting table 31 on which the flow channel 21 is mounted. Except for the differences described here, description of the contents common to the first embodiment will be omitted.

フローチャネル２１は基板表面に効率よくプロセスガスを供給するために用いられる。フローチャネル２１には底面に穴２１ａが設けられており、この穴２１ａに基板トレイ上の基板を露出させ、加熱機構により裏面から基板トレイ越しに基板を加熱しながら基板表面に各種プロセスガスを供給することにより基板表面近傍で気相反応を生じさせ、基板表面にプロセスガスに応じた任意の組成の結晶薄膜を成長させることができる。   The flow channel 21 is used to efficiently supply a process gas to the substrate surface. The flow channel 21 has a hole 21a on the bottom surface. The substrate on the substrate tray is exposed in the hole 21a, and various process gases are supplied to the substrate surface while heating the substrate from the back surface through the substrate tray by a heating mechanism. By doing so, a gas phase reaction is caused in the vicinity of the substrate surface, and a crystal thin film having an arbitrary composition corresponding to the process gas can be grown on the substrate surface.

フローチャネル２１とフローチャネル載置台３１との間には、互いに嵌合する凹凸形状からなる位置決め構造が２箇所に設けられている。第１の位置決め構造１７と第２の位置決め構造１８はそれぞれ第１実施形態における位置決め構造とほぼ同じ形状を有するが、第１の位置決め構造１７は挿入用突起と位置決め用突起を同一径とし第一の挿入用兼位置決め用突起１７ａが挿入用突起と位置決め用突起の機能を兼ねる点が異なる。また第２の位置決め構造１８は、第１の位置決め構造１７と同様に挿入用突起と位置決め用突起を同一径とし第２の挿入用兼位置決め用突起１８ａが挿入用突起と位置決め用突起の機能を兼ねるとともに、第１の位置決め構造１７と第２の位置決め構造１８を結ぶ軸方向に位置決め用穴１８ｂとそれに対応する挿入用穴１８ｃが長穴形状となっている点が異なる。前記長穴形状は、第２の位置決め構造１８の第２の挿入用兼位置決め用突起１８ａを、幅方向には第１の位置決め構造１７と同様に所定の隙間量で拘束するが、第１の位置決め構造１７と第２の位置決め構造１８を結ぶ軸方向に充分な隙間量を有するよう構成されている。   Between the flow channel 21 and the flow channel mounting table 31, there are provided two positioning structures having concave and convex shapes that fit together. Each of the first positioning structure 17 and the second positioning structure 18 has substantially the same shape as the positioning structure in the first embodiment, but the first positioning structure 17 has the same diameter for the insertion protrusion and the positioning protrusion. The difference is that the insertion / positioning projection 17a functions as both an insertion projection and a positioning projection. Similarly to the first positioning structure 17, the second positioning structure 18 has the same diameter as the insertion protrusion and the positioning protrusion, and the second insertion / positioning protrusion 18 a functions as an insertion protrusion and a positioning protrusion. In addition, the positioning hole 18b and the corresponding insertion hole 18c are elongated in the axial direction connecting the first positioning structure 17 and the second positioning structure 18. The elongated hole shape restricts the second insertion / positioning projection 18a of the second positioning structure 18 with a predetermined gap amount in the width direction as in the first positioning structure 17, A sufficient gap amount is formed in the axial direction connecting the positioning structure 17 and the second positioning structure 18.

フローチャネルとフローチャネル載置台を位置決め完了状態に嵌合させると、第１の位置決め構造では挿入用兼位置決め用突起と位置決め用穴との間の隙間量以内に相対移動が拘束され、かつ第１の位置決め構造を中心とした回転移動も第２の位置決め構造により拘束される。このため上記２箇所の位置決め構造の組合せにより、特に高い加工精度や温度管理を必要とせずに容易にフローチャネル載置台にフローチャネルを載置することができ、かつフローチャネル載置台に対するフローチャネルの面内位置および角度を精度良く位置決めして拘束することができる。   When the flow channel and the flow channel mounting table are fitted in the positioning completed state, the first positioning structure restricts relative movement within the gap amount between the insertion / positioning projection and the positioning hole, and The rotational movement around the positioning structure is also restrained by the second positioning structure. For this reason, the combination of the above two positioning structures allows the flow channel to be easily mounted on the flow channel mounting table without requiring particularly high processing accuracy and temperature control, and the flow channel with respect to the flow channel mounting table can be mounted. The in-plane position and angle can be accurately positioned and restrained.

また前記長穴は、温度変化等により第１の挿入用兼位置決め用突起と第２の挿入用兼位置決め用突起の間の距離と第１の位置決め用穴と第２の位置決め用穴間の距離とが相対的に変化しても、第２の位置決め構造側では長穴の直線部のみで第２の位置決め用突起を拘束し、長穴の端部には接触しないよう、充分な長さをもって製作される。   Further, the elongated hole is formed by a distance between the first insertion / positioning protrusion and the second insertion / positioning protrusion and a distance between the first positioning hole and the second positioning hole due to a temperature change or the like. The second positioning structure has a sufficient length so that the second positioning projection is restrained only by the straight portion of the elongated hole and does not come into contact with the end portion of the elongated hole. Produced.

上記例では、単枚の被搬送物を処理する装置について述べたが、２枚以上の多枚の被搬送物を処理する装置に用いてももちろんよい。ガス供給口を中心として同心円上に配列されたトレイや放射状に分割されたフローチャネルもしくはカバー等の炉内部材のそれぞれに前記位置決め構造が設けられていてもよいが、詳細は別途、第３実施形態において示す。   In the above example, an apparatus for processing a single object to be conveyed has been described. However, the apparatus may be used for an apparatus for processing two or more objects to be conveyed. The positioning structure may be provided in each of the in-furnace members such as the trays arranged concentrically around the gas supply port, the flow channel or the cover radially divided, and the details are separately described in the third embodiment. Shown in the form.

その他のバリエーションについても、第１実施形態と同様に可能であることは言うまでもない。
（第３実施形態）
図１７（ａ）（ｂ）（ｃ）は、それぞれ本発明の第３実施形態に係る気相成長装置のＡ−Ａ‘での上面断面図及び側面図である。うち、図１７（ａ）は全ての被搬送物が載置された状態を示し、図１７（ｃ）は全ての被搬送物が取り除かれた状態を示す。本発明の第３実施形態に係る搬送装置は、被搬送物を載置台に搬送し載置した際に所定の範囲に被搬送物を拘束する。 It goes without saying that other variations are possible as in the first embodiment.
(Third embodiment)
FIGS. 17A, 17B, and 17C are respectively a cross-sectional top view and a side view taken along line AA ′ of the vapor phase growth apparatus according to the third embodiment of the present invention. 17A shows a state where all the objects to be conveyed are placed, and FIG. 17C shows a state where all the objects to be conveyed have been removed. The transport apparatus according to the third embodiment of the present invention restrains the transported object within a predetermined range when the transported object is transported and placed on the mounting table.

本発明の第３実施形態に係る気相成長装置は、被搬送物である流路カバー２２と、流路カバー２２を載置するサセプター３２とを含んで構成される。ここで述べる相違点以外で第１実施形態もしくは第２実施形態と共通の内容については説明を省略する。   The vapor phase growth apparatus according to the third embodiment of the present invention includes a flow path cover 22 that is a transported object and a susceptor 32 on which the flow path cover 22 is placed. Except for the differences described here, the description of the contents common to the first embodiment or the second embodiment is omitted.

サセプター３２は、それぞれ基板４１を載置された複数枚の基板トレイ４２を上面に載置し、それらを公転機構４３によりサセプターの中心を回転軸として公転運動させるために用いられる。本実施形態では基板トレイ１枚につき基板１枚が載置され、８枚の基板トレイがサセプター上に載置されている。それぞれの基板トレイは自転プレート４４と自転機構４５を介してサセプター上に載置されており、サセプターの公転に合わせて各基板トレイを個々に自転させることができる。サセプターの回転中心軸近傍にはガス供給口４６があり、ここから放射状に供給されたプロセスガスは、基板表面及び基板表面と対向する位置に設けられたガスガイドプレート４７との間を通過し、外周部に設けられた排出口から排気・回収される。加熱機構４８によって下面からサセプターと基板トレイ越しに基板を加熱し、かつ基板トレイを自公転させながら、基板表面に各種プロセスガスを供給することにより基板表面近傍で気相反応を生じさせ、基板表面にプロセスガスに応じた任意の組成の結晶薄膜を成長させることができる。   The susceptor 32 is used for placing a plurality of substrate trays 42 each having a substrate 41 placed thereon and causing them to revolve around the center of the susceptor by a revolving mechanism 43. In the present embodiment, one substrate is placed per substrate tray, and eight substrate trays are placed on the susceptor. Each substrate tray is placed on a susceptor via a rotation plate 44 and a rotation mechanism 45, and each substrate tray can be rotated individually in accordance with the revolution of the susceptor. There is a gas supply port 46 in the vicinity of the rotation center axis of the susceptor, and the process gas supplied radially from here passes between the substrate surface and a gas guide plate 47 provided at a position facing the substrate surface, It is exhausted and collected from the outlet provided in the outer periphery. The heating mechanism 48 heats the substrate from the lower surface through the susceptor and the substrate tray, and causes the gas phase reaction to occur in the vicinity of the substrate surface by supplying various process gases to the substrate surface while revolving the substrate tray. A crystal thin film having an arbitrary composition corresponding to the process gas can be grown.

基板トレイ４１は自公転に適した形状として自転軸を中心とした軸対称な円盤形状であり、サセプター表面のうち前記円盤状の基板トレイで覆われた部分以外、すなわち公転のみしかしない部分は流路カバー２２で覆われている。前記基板トレイと前記流路カバーによりサセプター表面はほぼ前面にわたって結晶薄膜や副生成物が直接付着しないよう保護されている。流路カバー２２は基板トレイの枚数に合わせて８分割されており、各カバーはほぼ同一寸法である。   The substrate tray 41 has an axisymmetric disk shape centered on the rotation axis as a shape suitable for rotation and revolution, and the portion of the susceptor surface other than the portion covered with the disk-shaped substrate tray, that is, the portion that only has revolution, flows. Covered with a road cover 22. The substrate tray and the flow path cover protect the surface of the susceptor over the entire front surface so that crystal thin films and by-products do not adhere directly. The flow path cover 22 is divided into eight according to the number of substrate trays, and each cover has substantially the same size.

流路カバー２２とサセプター３２との間には、互いに嵌合する凹凸形状からなる位置決め構造がそれぞれ２箇所に設けられている。第１の位置決め構造１７と第２の位置決め構造１８はそれぞれ第２実施形態における位置決め構造と同じ形状を有する。第１の位置決め構造１７と第２の位置決め構造１８を結ぶ軸が公転機構の中心軸を通過し、第１の位置決め機構１７が公転機構の中心軸に近い側に配置されている。   Between the flow path cover 22 and the susceptor 32, positioning structures having concave and convex shapes that are fitted to each other are provided at two locations. Each of the first positioning structure 17 and the second positioning structure 18 has the same shape as the positioning structure in the second embodiment. An axis connecting the first positioning structure 17 and the second positioning structure 18 passes through the central axis of the revolution mechanism, and the first positioning mechanism 17 is disposed on the side close to the central axis of the revolution mechanism.

また、各位置決め構造の挿入用穴部は、公転機構の中心軸寄りに配置された小穴部と径方向に遠い側に配置された大穴部を接線でつなぐ形状となっており、公転機構の中心軸と前記小穴部の中心軸と前記大穴部の中心軸は一直線上に並んでいる。また前記のとおり挿入用穴部は外周側に向かって幅が直線的に拡大しており、その拡大部分の開き角４９はサセプターの１周３６０度を流路カバーの枚数である８で分割した４５度となっている。   In addition, the insertion hole of each positioning structure has a shape that connects the small hole arranged near the center axis of the revolution mechanism and the large hole arranged on the far side in the radial direction by a tangent line. The shaft, the central axis of the small hole portion, and the central axis of the large hole portion are aligned on a straight line. Further, as described above, the width of the insertion hole portion is linearly enlarged toward the outer peripheral side, and the opening angle 49 of the enlarged portion is divided by 360 degrees of one round of the susceptor by 8 which is the number of the channel covers. It is 45 degrees.

以下に基板トレイと流路カバーの交換工程を示す。   The process for replacing the substrate tray and the flow path cover will be described below.

図１８（ａ）（ｂ）は、それぞれ本実施形態での気相成長装置の流路カバー載置動作中の状態を示すＡ−Ａ‘での上面断面図及び側面図である。   FIGS. 18A and 18B are a top cross-sectional view and a side view, respectively, taken along line A-A ′ showing a state during the flow channel cover placement operation of the vapor phase growth apparatus according to this embodiment.

８００〜１４００℃程度の高温での加熱成膜処理完了後、まず加熱機構を停止し、被搬送物である基板及び基板トレイと流路カバーの温度があらかじめ設定された搬送可能温度以下に低下するまで待機する。このとき成膜を伴わない不活性ガスの流れにより被搬送物が冷却されていてもよい。本実施形態では搬送可能温度をサセプター温度が４００℃以下である状態とする。別途用意された温度検出手段にて前記搬送可能温度以下となったことを確認した後、チャンバの開口部を開き、ガスガイドプレート４７を上昇させ、搬送機構にて８枚の基板トレイ及び８枚の流路カバーを回収する。搬送機構は第１実施形態における搬送機構と同様の構造を有する。本実施形態での回収の順序は、まず基板トレイ８枚を１枚ずつ全て回収した後、流路カバー８枚が１枚ずつ順に回収されるというものであるが、この順序は逆でもよいし、あるいは基板トレイと流路カバーを交互に回収するなどしてもよい。搬送機構がサセプター上の被搬送物を吸着する位置は、公転機構からみて定められた角度位置であり、公転機構がサセプター上の吸着対象となる被搬送物を前記角度位置へ回転移動させた後停止させることにより、搬送機構は同じ回収位置で順番に次の被搬送物を吸着搬送することができる。   After completion of the heating film forming process at a high temperature of about 800 to 1400 ° C., the heating mechanism is first stopped, and the temperatures of the substrate and the substrate tray, which are the objects to be transferred, and the flow path cover are lowered to a preset transferable temperature or less. Wait until. At this time, the object to be transported may be cooled by an inert gas flow that does not involve film formation. In this embodiment, the transportable temperature is set to a state where the susceptor temperature is 400 ° C. or lower. After confirming that the temperature is below the transportable temperature by a separately prepared temperature detection means, the chamber opening is opened, the gas guide plate 47 is raised, and the eight substrate trays and eight sheets are transported by the transport mechanism. Collect the flow path cover. The transport mechanism has the same structure as the transport mechanism in the first embodiment. The order of collection in this embodiment is that all eight substrate trays are collected one by one, and then eight flow path covers are collected one by one, but this order may be reversed. Alternatively, the substrate tray and the flow path cover may be collected alternately. The position at which the transport mechanism sucks the object to be transported on the susceptor is an angular position determined from the viewpoint of the revolution mechanism, and after the revolution mechanism rotates and moves the object to be attracted on the susceptor to the angular position. By stopping, the transport mechanism can suck and transport the next objects to be transported in order at the same collection position.

成膜処理完了済みの被搬送物の回収に続いて、未処理の被搬送物の投入が開始される。処理済みの被搬送物の回収中もサセプター温度は自然冷却を続けており、また未処理の被搬送物の投入中もさらに継続して自然冷却される。本実施形態での投入の順序は、まず流路カバー８枚を１枚ずつ全て投入した後、基板トレイ８枚が１枚ずつ順に投入されるというものであるが、この順序は逆でもよいし、あるいは流路カバーと基板トレイを交互に投入するなどしてもよい。本実施形態では、通常の動作において８枚の流路カバーのうち最初の１枚目が投入される際のサセプター温度はおよそ３００℃程度であり、その後も継続して自然冷却がなされ、投入される流路カバー毎に投入時のサセプター温度は異なり、最後の８枚目の流路カバーが投入される際には例えば２００℃程度となる。装置のアウトガス作業後にすぐに投入動作を行う場合などには最初の１枚目の流路カバーの投入動作がサセプター温度約４００℃で投入される場合もあり、逆に動作中のトラブルもしくはその他の都合による装置の一時停止等で各流路カバーの投入時のサセプター温度が３００〜２００℃よりもさらに低下している場合もある。また充分に長時間装置が停止していた後に投入動作を行う場合などは、サセプター温度は最初の１枚目から最後の８枚目まで常に室温であるところの約２５℃程度のままである。すなわちサセプター温度が２５℃から４００℃の範囲内のいずれの温度の状態でも流路カバーの位置決め搬送が可能である必要がある。サセプターの材質としては、加熱機構からの熱を基板へ均一に伝える目的で熱伝導率の高いカーボンで製作されている。カーボンの熱膨張係数は４．８×１０−６／℃であり、サセプターが公転中心軸で固定されているとすれば、２５℃と４００℃の間での温度変化に伴う熱膨張・収縮による半径方向の位置変動量は例えば半径２００ｍｍの位置で約３６０μｍにもなる。 Subsequent to the collection of the transported object after the film forming process is completed, the introduction of the unprocessed transported object is started. The susceptor temperature continues to be naturally cooled even during the collection of the treated object to be processed, and further continues to be naturally cooled while the untreated object to be conveyed is being charged. The order of loading in this embodiment is such that, after all the eight flow path covers are loaded one by one, the eight substrate trays are sequentially loaded one by one, but this order may be reversed. Alternatively, the flow path cover and the substrate tray may be alternately inserted. In this embodiment, the susceptor temperature when the first one of the eight flow path covers is put in the normal operation is about 300 ° C., and after that, the natural cooling continues and is turned on. The susceptor temperature at the time of loading differs for each channel cover, and is about 200 ° C. when the final eighth channel cover is loaded. When the charging operation is performed immediately after the outgas operation of the apparatus, the first channel cover charging operation may be performed at a susceptor temperature of about 400 ° C. In some cases, the susceptor temperature at the time of introduction of each flow path cover is further lowered from 300 to 200 ° C. due to the temporary suspension of the apparatus or the like. In addition, when the loading operation is performed after the apparatus has been sufficiently stopped for a long time, the susceptor temperature remains at about 25 ° C., which is always room temperature from the first to the last eight sheets. That is, it is necessary that the flow path cover can be positioned and conveyed at any susceptor temperature range of 25 ° C. to 400 ° C. The material of the susceptor is made of carbon with high thermal conductivity for the purpose of uniformly transferring heat from the heating mechanism to the substrate. The coefficient of thermal expansion of carbon is 4.8 × 10 −6 / ° C., and if the susceptor is fixed on the revolution center axis, it is due to thermal expansion / contraction caused by temperature change between 25 ° C. and 400 ° C. The positional fluctuation amount in the radial direction is, for example, about 360 μm at a position with a radius of 200 mm.

この他に、特に温度変化が搬送精度に影響を与える要因として、搬送機構のアーム部ほかの熱膨張・収縮も考慮に入れる必要がある。また、温度変化によらない一般的な精度低下要因として、サセプター公転の回転停止精度や、搬送機構の停止精度、サセプター上の位置決め構造の加工位置ばらつきなどが考えられる。   In addition, it is necessary to take into account thermal expansion / contraction of the arm portion of the transport mechanism and the like as a factor that the temperature change affects the transport accuracy. In addition, as a general factor of decrease in accuracy that does not depend on temperature change, rotation stop accuracy of susceptor revolution, conveyance mechanism stop accuracy, and processing position variation of the positioning structure on the susceptor can be considered.

投入動作は具体的には第１実施形態と同様に『１次移動』→『１次下降』→『２次移動』→『２次下降』の順に動作が行われる。前記第１の位置決め構造１７と第２の位置決め構造１８の、挿入用穴における大穴部の直径と挿入用兼位置決め用突起との間の各隙間量は、前記サセプターの温度変化による半径方向の位置変動量やその他の起こりうる精度低下要因の和よりも充分大きく製作されているので、搬送可能温度以下の状態においてはサセプター温度によらず『１次下降』の際に各挿入用突起が各挿入用穴に乗り上げることはない。続けて搬送機構によりサセプターの公転中心に向かって『２次移動』を行い、その後『２次下降』により位置決め用穴と挿入用兼位置決め用突起とを嵌合させれば、特に高い加工精度や温度管理を必要とせずに容易にサセプター上に各流路カバーを載置することができ、かつサセプターに対する流路カバーの面内位置および角度を精度良く位置決めして拘束することができる。   Specifically, as in the first embodiment, the closing operation is performed in the order of “primary movement” → “primary descent” → “secondary movement” → “secondary descent”. The amount of each gap between the diameter of the large hole portion in the insertion hole and the insertion / positioning projection of the first positioning structure 17 and the second positioning structure 18 is the radial position due to the temperature change of the susceptor. Since it is made sufficiently larger than the sum of the fluctuation amount and other possible accuracy reduction factors, each insertion projection is inserted during the “primary descent” regardless of the susceptor temperature when the temperature is below the transportable temperature. You don't get into the hole. Next, if "secondary movement" is performed toward the revolution center of the susceptor by the transport mechanism and then the positioning hole and the insertion / positioning protrusion are fitted by "secondary lowering", particularly high machining accuracy and Each flow path cover can be easily placed on the susceptor without requiring temperature control, and the in-plane position and angle of the flow path cover with respect to the susceptor can be accurately positioned and restrained.

『２次移動』中には、挿入用穴部の断面を形成する大穴部と小穴部を結ぶ軸上に挿入用突起の中心軸が位置していなくても、挿入用穴部の断面を形成する大穴部と小穴部を結ぶ接線部分に相当する壁面が挿入用突起の側面に接触しながらガイドし、挿入用突起は徐々に挿入用穴部の小穴部と中心軸が一致する位置へと移動する。前記のとおり、挿入用穴部のうち直線的に幅が増大している部分の開き角は４５度で形成されているので、載置する流路カバーの片側もしくは両側の隣に既に流路カバーが載置されている場合でも、前記接線部分に相当する壁面が流路カバーの『２次移動』に伴う幅方向の移動をガイドするので、隣接する流路カバーと必要以上に摩擦することはない。また、隣接する流路カバーとの接触を特に避けたい場合には前記開き角４９を４５度以下である例えば４０度程度としておけばよい。   During “secondary movement”, the cross section of the insertion hole is formed even if the central axis of the insertion protrusion is not located on the axis connecting the large hole and the small hole forming the cross section of the insertion hole. The wall surface corresponding to the tangent line connecting the large hole part and small hole part is guided while contacting the side surface of the insertion protrusion, and the insertion protrusion gradually moves to a position where the center axis coincides with the small hole part of the insertion hole part. To do. As described above, since the opening angle of the linearly increasing portion of the insertion hole is formed at 45 degrees, the flow path cover is already on one side or next to both sides of the flow path cover to be placed. Even when the wall is placed, the wall surface corresponding to the tangential portion guides the movement in the width direction accompanying the “secondary movement” of the flow path cover, so that it is not necessary to rub against the adjacent flow path cover more than necessary. Absent. If it is particularly desired to avoid contact with the adjacent flow path cover, the opening angle 49 may be set to 45 degrees or less, for example, about 40 degrees.

その他のバリエーションについても、第１実施形態及び第２実施形態と同様に可能であることは言うまでもない。   It goes without saying that other variations are also possible as in the first and second embodiments.

２ 基板トレイ
３ 載置台
４ 回転機構
５ 基板
６ 加熱機構
７ チャンバ
８ 導入口
９ 排出口
１０ 開口部
１１ 搬送機構
１２ 保持機構
１３ スライド機構
１５ 凸形状
１６ 凹形状
１７ 第１の位置決め構造
１８ 第２の位置決め構造
２１ フローチャネル
２２ 流路カバー
３１ フローチャネル載置台
３２ サセプター 2 substrate tray 3 mounting table 4 rotating mechanism 5 substrate 6 heating mechanism 7 chamber 8 inlet 9 outlet 10 opening 11 transport mechanism 12 holding mechanism 13 slide mechanism 15 convex shape 16 concave shape 17 first positioning structure 18 second positioning structure 18 Positioning structure 21 Flow channel 22 Flow path cover 31 Flow channel mounting table 32 Susceptor

Claims (7)

被搬送物を加熱処理するための加熱処理装置であって、
被搬送物を載置するための載置台と、
前記載置台及び前記被搬送物を加熱する加熱装置とを有し、
前記載置台及び前記被搬送物には、前記載置台上で前記被搬送物を位置決めするための位置決め構造を有し、
前記位置決め構造は相互に嵌合する凹形状と凸形状とからなり、
前記被搬送物、及び前記被搬送物を載置するための前記載置台が、前記凹形状と前記凸形状のどちらか片方ずつをそれぞれ有し、
前記凹形状は挿入用穴部と位置決め用穴部とを有し、
前記凸形状は挿入用突起部と位置決め用突起部とを有し、
前記凸形状は、前記凹形状に充分に嵌合可能な長さを有しており、嵌合深さが浅いと前記挿入用穴部と前記挿入用突起部とが嵌合し、さらに深く嵌合すると前記位置決め用穴部と前記位置決め用突起部とが嵌合する長さもしくは深さを各部が有し、
前記凹形状の穴の深さ方向に対して垂直な面内において、前記位置決め用穴部に前記位置決め用突起部が嵌合したときにおける隙間量は、前記挿入用穴部に前記挿入用突起部が嵌合したときにおける隙間量より小さく、
かつ前記面内の特定の位置において前記挿入用穴部と前記挿入用突起部とが接触した状態で嵌合深さを深くした場合のみ、前記位置決め用穴部と前記位置決め用突起部とが嵌合し、前記特定の位置以外の位置においては、前記位置決め用穴部と前記位置決め用突起部とが嵌合しない
ことを特徴とする加熱処理装置。 A heat treatment apparatus for heat-treating an object to be conveyed,
A mounting table for mounting the object to be transported;
And a heating device for heating the mounting table and the object to be conveyed,
The mounting table and the object to be conveyed, has a positioning structure for positioning the carried object on the mounting table,
The positioning structure is composed of a concave and convex shape to be fitted to each other,
The carried object, and the said table for placing the object to be conveyed, has a one by one or the other of the convex and the concave shape, respectively,
The concave shape and a positioning hole and the insertion hole portion,
The convex shape and a positioning protrusion and the insertion protrusion,
The convex shape, the concave shape has a sufficiently fittable length, fitting depth the insertion hole and the projection and is fitted for the insertion and shallow, fitted more deeply that if said positioning hole and the positioning protrusion length or depth possessed by each part to be fitted,
In a plane perpendicular to the depth direction of the concave hole, when the positioning projection is fitted into the positioning hole, the gap amount is the insertion projection in the insertion hole. Smaller than the gap amount when
In addition , the positioning hole and the positioning protrusion are fitted only when the insertion depth is increased in a state where the insertion hole and the insertion protrusion are in contact with each other at a specific position in the plane. In addition, in the position other than the specific position, the positioning hole and the positioning protrusion are not fitted to each other . 前記位置決め構造における前記凸形状が、前記挿入用突起と前記位置決め用突起とを兼ねる突起により形成されている
ことを特徴とする請求項１に記載の加熱処理装置。 Wherein the convex shape of the positioning structure, the heat treatment apparatus according to claim 1, characterized in that it is formed by the projection serving as a said positioning projection and said insertion projection. 前記被搬送物と前記載置台とは、前記位置決め構造を２箇所に有し、
一方の前記位置決め構造である第１の位置決め構造と、他方の前記位置決め構造である第２の位置決め構造とは嵌合方向が同一で同時に嵌合可能であり、
前記第２の位置決め構造における前記位置決め用穴部と前記位置決め用突起部との嵌合形状は、前記第１の位置決め構造における前記位置決め用穴部と前記位置決め用突起部との嵌合形状に対して、嵌合方向への投影図における前記第１の位置決め構造と前記第２の位置決め構造とを結ぶ軸方向の隙間量が大きい
ことを特徴とする請求項１または２に記載の加熱処理装置。 Wherein the said mounting base and the conveyed object has the positioning structure at two positions,
The first positioning structure which is one of the positioning structures and the second positioning structure which is the other positioning structure have the same fitting direction and can be fitted simultaneously .
Fitting the shape of the front Symbol the positioning protrusion and the positioning hole in the second positioning structure, the fitting shape of the said positioning hole in the first positioning structure the positioning projections against, the heat treatment apparatus according to claim 1 or 2, wherein the gap amount in the axial direction connecting the first positioning structure and the second positioning structure is large in the projection of the mating direction . 前記載置台が、複数の前記被搬送物を載置可能であり、
前記載置台を回転させる回転機構を有し、
前記位置決め構造により前記複数の被搬送物が前記回転機構の回転軸を中心に同心円状に載置される
ことを特徴とする請求項１から３のいずれか１項に記載の加熱処理装置。 It said mounting base are possible placing a plurality of the conveyed object,
Having a rotating mechanism for rotating the mounting table,
Heat treatment apparatus according to any one of claims 1 to 3, wherein the plurality of objects to be conveyed by said positioning structure is mounted concentrically around the rotation axis of the rotating mechanism. 前記凹形状の穴の深さ方向に対して垂直な面内において、前記挿入用穴部は前記回転機構の回転軸からの距離とともに拡大する部分を有し、
前記挿入用穴部と前記挿入用突起部とが接触した状態で嵌合深さを深くすると前記位置決め用穴部と前記位置決め用突起部とが嵌合可能である前記特定の位置が、
前記挿入用穴部のうち前記回転機構の回転軸に最も近い位置である
ことを特徴とする請求項４に記載の加熱処理装置。 In a plane perpendicular to the depth direction of the concave hole, the insertion hole has a portion that expands with a distance from the rotation axis of the rotation mechanism,
Wherein the insertion hole and the insertion protrusion and is deeply fitting depth in contact with the positioning hole and the positioning protrusion is the particular position can be fitted,
The heat treatment apparatus according to claim 4, wherein the heat treatment apparatus is located closest to a rotation axis of the rotation mechanism in the insertion hole. 前記複数の被搬送物は前記回転機構の回転軸を中心に等角度ピッチに載置され、
前記挿入用穴部は前記回転機構の回転軸からの距離とともに直線的に拡大する部分を有し、
前記直線的に拡大する部分の開き角が、３６０度を前記被搬送物の数で割った角度以下である
ことを特徴とする請求項４に記載の加熱処理装置。 The plurality of objects to be conveyed are placed at an equiangular pitch around a rotation axis of the rotation mechanism,
The insertion hole has a linearly enlarged portion with distance from the axis of rotation of the rotating mechanism,
5. The heat treatment apparatus according to claim 4, wherein an opening angle of the linearly expanding portion is equal to or less than an angle obtained by dividing 360 degrees by the number of the objects to be conveyed. 前記被搬送物を保持する保持機構と、
前記保持機構を前記位置決め構造の嵌合方向に移動させる昇降機構と、
前記嵌合方向とは異なる方向に移動させる移動機構とからなる搬送機構を有する
ことを特徴とする請求項１から６のいずれか１項に記載の加熱処理装置。 A holding mechanism for holding the carried object,
An elevating mechanism for moving the holding mechanism in the fitting direction of the positioning structure;
The heat treatment apparatus according to any one of claims 1 to 6, characterized in that it comprises a conveying mechanism comprising a moving mechanism for moving in a direction different from the mating direction.
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