JP4744469B2 - 加速空胴のエッチング方法 - Google Patents
加速空胴のエッチング方法 Download PDFInfo
- Publication number
- JP4744469B2 JP4744469B2 JP2007084245A JP2007084245A JP4744469B2 JP 4744469 B2 JP4744469 B2 JP 4744469B2 JP 2007084245 A JP2007084245 A JP 2007084245A JP 2007084245 A JP2007084245 A JP 2007084245A JP 4744469 B2 JP4744469 B2 JP 4744469B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- cavity
- acceleration cavity
- container
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005530 etching Methods 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 31
- 230000001133 acceleration Effects 0.000 claims description 44
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 26
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 24
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 18
- 239000000243 solution Substances 0.000 description 17
- 239000007788 liquid Substances 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000009210 therapy by ultrasound Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000009377 nuclear transmutation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- -1 peroxide Ammonium sulfate Chemical class 0.000 description 1
- 125000005385 peroxodisulfate group Chemical group 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Landscapes
- Particle Accelerators (AREA)
- ing And Chemical Polishing (AREA)
Description
[項1]
(I)容器内のエッチング液に加速空胴を浸漬する工程、及び、
(II)該容器内を加圧した状態で、該加速空胴をエッチングする工程、
を包含する、加速空胴のエッチング方法。
[項2]
前記工程(II)において、前記容器内を1気圧より高く且つ200気圧以下に加圧した状態で、前記加速空胴をエッチングする、項1に記載の方法。
[項3]
前記工程(II)において、前記容器内を1気圧より高く且つ200気圧以下に加圧し且つ前記エッチング液の温度を50℃以下にした状態で、前記加速空胴をエッチングする、項1に記載の方法。
(1)脱脂
(2)水洗
(3)エッチング
(4)純水洗
(5)超純水洗
(6)超純水洗
(7)乾燥
(8)真空引
(9)包装。
例えば、加速空胴内の角や隅は、通常、電界が集中しやすく、放電(RFブレークダウン)が起こりやすい領域である。本発明の方法によれば、従来法ではガスが付着しやすい角や隅においても、ガスの付着を低減させることができ、好適なエッチングが可能である。好適なエッチングが施された角や隅は丸みを帯び、電界が集中しにくくなるので、放電が起こりにくくなる。このように本発明の方法によれば、角や隅においても放電が起こりにくく、それゆえ内壁表面に放電痕を生じにくい優れた加速空胴を得ることができる。
カソードプラグ(材質:無酸素銅)及び無酸素銅試験片を用いて、以下の表1に示す1〜9の工程を行なった。なお、カソードプラグと同条件で処理した無酸素銅試験片は、気泡消失の確認、エッチング量の確認及び表面粗度の測定に用いた。
2002年から2005年にかけて電界強度を135mV/mまで印加可能に慣らし運転を進めていたカソード脱着式の加速空胴を用いた。この加速空胴の脱着可能なカソードプラグを実施例1〜7及び比較例1〜4のカソードプラグに入れ換えて、最終的に到達した電界強度及びその電界に達するまでに要した慣らし運転時間を測定した。
表3にHIP処理カソードプラグを用いた場合の結果を示す。なお、比較例2については、4回測定を行なった。
Claims (3)
- (I)容器内のエッチング液に常電導加速空胴を浸漬する工程、及び、
(II)該容器内を加圧した状態で、該常電導加速空胴をエッチングする工程、
を包含し、加圧した状態の圧力が3気圧以上200気圧以下であり、常電導加速空胴の材質が無酸素銅またはアルミニウムである、常電導加速空胴のエッチング方法。 - 前記工程(II)において、前記エッチング液の温度を50℃以下にした状態で、前記常電導加速空胴をエッチングする、請求項1に記載の方法。
- 前記工程(II)において、前記エッチング液の温度を25℃以下にした状態で、前記常電導加速空胴をエッチングする、請求項1又は2に記載の方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007084245A JP4744469B2 (ja) | 2007-03-28 | 2007-03-28 | 加速空胴のエッチング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007084245A JP4744469B2 (ja) | 2007-03-28 | 2007-03-28 | 加速空胴のエッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008243671A JP2008243671A (ja) | 2008-10-09 |
JP4744469B2 true JP4744469B2 (ja) | 2011-08-10 |
Family
ID=39914751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007084245A Active JP4744469B2 (ja) | 2007-03-28 | 2007-03-28 | 加速空胴のエッチング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4744469B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012043475A1 (ja) * | 2010-09-27 | 2012-04-05 | 大学共同利用機関法人高エネルギー加速器研究機構 | 光陰極高周波電子銃空洞装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10269937A (ja) * | 1997-03-27 | 1998-10-09 | Fujitsu Ltd | 薬液の供給装置及び供給方法 |
JPH11350200A (ja) * | 1998-06-09 | 1999-12-21 | Nomura Mekki:Kk | 金属製中空体の内面研磨方法及び研磨装置 |
JP2000294398A (ja) * | 1999-04-12 | 2000-10-20 | Nomura Plating Co Ltd | 超伝導加速空洞の表面研磨方法 |
-
2007
- 2007-03-28 JP JP2007084245A patent/JP4744469B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10269937A (ja) * | 1997-03-27 | 1998-10-09 | Fujitsu Ltd | 薬液の供給装置及び供給方法 |
JPH11350200A (ja) * | 1998-06-09 | 1999-12-21 | Nomura Mekki:Kk | 金属製中空体の内面研磨方法及び研磨装置 |
JP2000294398A (ja) * | 1999-04-12 | 2000-10-20 | Nomura Plating Co Ltd | 超伝導加速空洞の表面研磨方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2008243671A (ja) | 2008-10-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5023705B2 (ja) | 半導体装置の製造方法、半導体製造装置及び記憶媒体 | |
JP7140329B2 (ja) | 陽極酸化チタン材及びその製造方法 | |
JP7112842B2 (ja) | 金属基材を電解研磨する方法 | |
Kelly et al. | Surface processing for bulk niobium superconducting radio frequency cavities | |
JP4744469B2 (ja) | 加速空胴のエッチング方法 | |
WO2002097154A1 (fr) | Element interieur d'un conteneur de traitement plasma et dispositif de traitement plasma comprenant ledit element interieur | |
JP2009013489A (ja) | CVD−SiC成形体の洗浄方法 | |
US8163156B2 (en) | Method for vacuum-compression micro plasma oxidation | |
JP6257944B2 (ja) | アルミニウム合金部材およびアルミニウム合金の表面保護膜形成方法 | |
TW201003753A (en) | Method of manufacturing a semiconductor device and method of cleaning a semiconductor substrate | |
JP2012256501A (ja) | プラズマ生成用ガスおよびプラズマ生成方法並びにこれにより生成された大気圧プラズマ | |
CN104282518A (zh) | 等离子体处理装置的清洁方法 | |
WO1999061573A1 (fr) | Fluide de lavage et procede de lavage de composants d'un appareil de traitement de semi-conducteurs | |
Reid et al. | New SRF Structures Processed at the ANL Cavity Processing Facility | |
JP4994719B2 (ja) | 陽極酸化被膜剥離液及び陽極酸化被膜の剥離方法 | |
Abdel-Fattah et al. | Surface characterization of high purity niobium electropolished with an ionic liquid | |
Saito et al. | Study of ultra-clean surface for niobium SC cavities | |
CN106833962A (zh) | 用于去除半导体蚀刻腔体陶瓷涂层零件污染物的清洗剂及其制备和应用 | |
CN103698271B (zh) | 互不固溶金属层状复合材料界面结合强度的测试方法 | |
TWI569894B (zh) | Pollutant Treatment Method for Sprinkler with Silicon Carbide Coated | |
KR19980038993U (ko) | 가스관 내부표면 전해연마 장치 | |
Galaly et al. | Study of the etching processes of Si [1 0 0] wafer using ultra low frequency plasma | |
JP6638334B2 (ja) | プラズマ処理装置部品のクリーニング方法及びクリーニング装置 | |
Kencana et al. | Achieving Selective Cleaning on Semiconductors Packaging Using Atmospheric Pressure Plasma | |
JP5189856B2 (ja) | 真空処理装置のウェットクリーニング方法および真空処理装置の部材 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100127 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110125 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110201 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110322 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110419 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110510 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140520 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4744469 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140520 Year of fee payment: 3 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140520 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140520 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |