JP4737392B2 - Board inspection equipment - Google Patents

Board inspection equipment Download PDF

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JP4737392B2
JP4737392B2 JP2005165316A JP2005165316A JP4737392B2 JP 4737392 B2 JP4737392 B2 JP 4737392B2 JP 2005165316 A JP2005165316 A JP 2005165316A JP 2005165316 A JP2005165316 A JP 2005165316A JP 4737392 B2 JP4737392 B2 JP 4737392B2
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substrate
wafer
vacuum
warpage
vacuum pressure
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JP2006339574A (en
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武一 安藤
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Nikon Corp
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この発明は基板検査装置に関する。   The present invention relates to a substrate inspection apparatus.

半導体の製造プロセスでは搬送アームでウエハをフープ(FOUP)から検査部まで搬送し、検査を行う。ウエハの搬送中、搬送アームの先端部にウエハの下面が真空吸着され、回路パターンが形成されている上面が上を向いている。ウエハは搬送アームの先端部に設けられた吸着孔に真空吸着される。ウエハが吸着されているか否かは例えば真空計を用いて真空度を検出することで判断される。
特開2002−301678号公報
In a semiconductor manufacturing process, a wafer is transferred from a FOUP to an inspection unit by a transfer arm and inspected. During the transfer of the wafer, the lower surface of the wafer is vacuum-sucked at the tip of the transfer arm, and the upper surface on which the circuit pattern is formed faces upward. The wafer is vacuum-sucked in a suction hole provided at the tip of the transfer arm. Whether or not the wafer is adsorbed is determined by detecting the degree of vacuum using, for example, a vacuum gauge.
JP 2002-301678 A

ところが、ウエハが反っている場合、ウエハの下面と搬送アームの先端部の上面との間に隙間が生じるため、ウエハの下面の真空圧が所定値に到達せず、ウエハが吸着されていないと判断されて、基板検査装置が停止することがある。   However, when the wafer is warped, there is a gap between the lower surface of the wafer and the upper surface of the tip of the transfer arm, so that the vacuum pressure on the lower surface of the wafer does not reach a predetermined value and the wafer is not attracted. As a result, the substrate inspection apparatus may stop.

基板検査装置が停止したとき、作業者はウエハの受け渡し動作を基板検査装置に再度実行させたり、ウエハが吸着されているか否かを判断するための真空圧のしきい値を下げたりする等、煩わしい手作業が必要であった。   When the substrate inspection apparatus is stopped, the operator causes the substrate inspection apparatus to execute the wafer transfer operation again, or lowers the vacuum pressure threshold for determining whether the wafer is adsorbed, etc. Annoying manual work was necessary.

この発明はこのような事情に鑑みてなされたもので、その課題は基板の反りに起因する基板搬送の際の作業者の負担を軽減することができる基板検査装置を提供することである。   The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate inspection apparatus that can reduce the burden on the operator when the substrate is conveyed due to warping of the substrate.

上記課題を解決するため請求項1記載の発明は、検査対象の基板を収納する基板収納部と、前記基板を真空吸着して前記基板収納部から検査ステージに搬送する搬送手段と、前記基板を吸着する部分の真空度と所定のしきい値とに基づいて前記基板の有無を判定する判定手段と、前記基板の反りに関わる情報を登録する登録手段と、前記登録手段に登録された反りに関わる情報に基づいて前記基板を吸着する部分と前記基板との離れ具合が大きいときには前記しきい値を下げて前記基板の有無を確認する制御を行う制御手段とを備えていることを特徴とする。 In order to solve the above-described problem, the invention according to claim 1 is a substrate storage unit that stores a substrate to be inspected, a transport unit that vacuum-sucks the substrate and transports the substrate from the substrate storage unit to an inspection stage, and determination means for determining presence or absence of the substrate based on the degree of vacuum with a predetermined threshold value of the portion to be adsorbed, and registering means for registering information relating to the warp of the substrate, the warpage is registered in the registration means Control means for performing control to lower the threshold and confirm the presence / absence of the substrate when the degree of separation between the portion that adsorbs the substrate and the substrate is large based on related information. .

請求項2記載の発明は、請求項1記載の基板検査装置において、前記制御手段は、反りに関わる情報に基づいて前記基板を吸着する部分と前記基板との離れ具合が大きいときには前記基板を前記搬送する速度を下げることを特徴とする。   According to a second aspect of the present invention, in the substrate inspection apparatus according to the first aspect, the control means removes the substrate when the degree of separation between the portion that adsorbs the substrate and the substrate is large based on information related to warpage. It is characterized by lowering the conveying speed.

請求項記載発明は、請求項1又は2記載の基板検査装置において、前記制御手段からの指示に基づいて前記搬送手段の基板吸着部の中心部の吸着真空圧とその外周部の吸着真空圧とが独立に制御され、前記基板の搬送条件は前記真空圧の分布であり前記反りにより前記基板を吸着する部分と前記基板との離れ具合が大きいところの前記真空圧を上げることを特徴とする。 According to a third aspect of the present invention, in the substrate inspection apparatus according to the first or second aspect, the suction vacuum pressure at the central portion of the substrate suction portion of the transfer means and the suction vacuum at the outer peripheral portion based on an instruction from the control means. and the pressure is controlled independently, transport conditions of the substrate, characterized in that raising the vacuum pressure at spaced condition between the portion and the substrate to adsorb the substrate by the warp Ri distribution der of the vacuum pressure is larger And

本発明によれば、基板の反りに起因する基板搬送の際の作業者の負担を軽減することができる。   According to the present invention, it is possible to reduce the burden on an operator when transporting a substrate due to warping of the substrate.

以下、この発明の実施の形態を図面に基づいて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図1はこの発明の第1実施形態に係る基板検査装置のブロック図、図2は搬送アームのウエハ吸着部の平面図である。   FIG. 1 is a block diagram of a substrate inspection apparatus according to a first embodiment of the present invention, and FIG. 2 is a plan view of a wafer suction portion of a transfer arm.

この基板検査装置はウエハキャリア部(基板収納部)1と搬送部(搬送手段)2と検査ステージ3と制御部(制御手段)4とを備えている。   The substrate inspection apparatus includes a wafer carrier unit (substrate storage unit) 1, a transfer unit (transfer unit) 2, an inspection stage 3, and a control unit (control unit) 4.

ウエハキャリア部1には図示しない複数のウエハ(基板)が収容されている。   A plurality of wafers (substrates) (not shown) are accommodated in the wafer carrier unit 1.

搬送部2はウエハキャリア部1からウエハを検査ステージ3へ搬送するための搬送アーム2Bを備えている。搬送アーム2Bのウエハ吸着部にはウエハを真空吸着するための吸着孔(図示せず)が形成され、この吸着孔はバキューム配管(図示せず)を介して真空ポンプ(図示せず)に接続されている。搬送アーム2Bにはウエハを吸着したときの真空圧を検出する真空センサ2Aが接続され、真空センサ2Aの検出結果に基いてウエハの有無が判断される。   The transfer unit 2 includes a transfer arm 2 </ b> B for transferring a wafer from the wafer carrier unit 1 to the inspection stage 3. A suction hole (not shown) for vacuum-sucking the wafer is formed in the wafer suction portion of the transfer arm 2B, and this suction hole is connected to a vacuum pump (not shown) via a vacuum pipe (not shown). Has been. The transfer arm 2B is connected to a vacuum sensor 2A that detects the vacuum pressure when the wafer is adsorbed, and the presence or absence of the wafer is determined based on the detection result of the vacuum sensor 2A.

検査ステージ3は搬送部2の搬送アーム2Bによって搬送されてきたウエハを載置するホルダ3aを有する。また、検査ステージ3はウエハの観察や検査を行なう測定部3Bを有する。検査ステージ3にはウエハを真空吸着するための吸着孔3dが形成され、この吸着孔3dはバキューム配管(図示せず)を介して真空ポンプ(図示せず)に接続されている。検査ステージ3にはウエハを吸着したときの真空度を検出する真空センサ3Aが接続され、真空センサ3Aの検出結果に基いてウエハの有無が判断される。   The inspection stage 3 has a holder 3a on which the wafer transferred by the transfer arm 2B of the transfer unit 2 is placed. The inspection stage 3 has a measuring unit 3B for observing and inspecting the wafer. The inspection stage 3 is formed with a suction hole 3d for vacuum-sucking the wafer, and this suction hole 3d is connected to a vacuum pump (not shown) via a vacuum pipe (not shown). The inspection stage 3 is connected to a vacuum sensor 3A that detects the degree of vacuum when the wafer is sucked, and the presence or absence of the wafer is determined based on the detection result of the vacuum sensor 3A.

制御部4はウエハキャリア部1から検査ステージ3まで複数のウエハを搬送するときのウエハの搬送条件に係る指令を搬送部2に送る。制御部4は例えばパーソナルコンピュータで構成される。制御部4はレシピ(登録手段)5を有する。レシピ5には測定・検査のプログラム(検査を行なう位置や検査内容)の他に、ウエハの反り情報が記憶されている。ウエハの反り情報は、例えば反りの有無、反りの大小、反りが凸状か凹状等である。制御部4はこのウエハの反り情報に基づいてウエハの搬送条件を適宜変更する。   The control unit 4 sends to the transfer unit 2 commands related to wafer transfer conditions when transferring a plurality of wafers from the wafer carrier unit 1 to the inspection stage 3. The control unit 4 is constituted by a personal computer, for example. The control unit 4 has a recipe (registration means) 5. In addition to the measurement / inspection program (inspection position and inspection content), recipe 5 stores wafer warpage information. The warpage information of the wafer includes, for example, the presence / absence of warpage, the magnitude of the warpage, and the warpage is convex or concave. The controller 4 appropriately changes the wafer transfer conditions based on the wafer warpage information.

搬送条件の変更について具体的に説明する。   The change of the conveyance conditions will be specifically described.

1.ウエハの有無を判断するための真空圧のしきい値を変更する。 1. The threshold value of the vacuum pressure for determining the presence or absence of a wafer is changed.

ウエハの反りが大きい程、真空圧のしきい値を下げる。しきい値を下げた場合、搬送の際のウエハのずれを防止するため、搬送速度を低下させる。     The greater the wafer warp, the lower the vacuum pressure threshold. When the threshold value is lowered, the transfer speed is lowered in order to prevent the wafer from shifting during the transfer.

2.リトライの追加
反りがあるウエハの受け渡しの際ウエハが無いと判断された場合、受け渡しのリトライを所定回数(1回又は複数回)だけ行う。このとき、真空圧のしきい値や真空圧等の条件を変更してもよい。
2. Addition of retry When it is determined that there is no wafer during delivery of a warped wafer, retry of delivery is performed a predetermined number of times (one or more times). At this time, conditions such as a vacuum pressure threshold and a vacuum pressure may be changed.

3.真空圧の変更
搬送アーム2Bに同心円状の吸着エリア(隣り合うリング状突起部3b間に形成されるのリング状溝)3cが設けられている場合(図2参照)、ウエハの反りが凸状であるときには中央部の吸着エリア3cの真空圧を高くし、その反りが凹状であるときには外側の吸着エリア3cの真空圧を高くする。
3. Change of vacuum pressure When the transfer arm 2B is provided with a concentric suction area (ring-shaped groove formed between adjacent ring-shaped protrusions 3b) 3c (see FIG. 2), the wafer warpage is convex. If the warp is concave, the vacuum pressure of the outer suction area 3c is increased.

ウエハの反りの状態はウエハのサイズ(ウエハの大きさ、厚み)、ウエハが経た工程により変化する。同じ工程を経たウエハの反りの状態は同じ傾向を示す。   The state of wafer warpage varies depending on the size of the wafer (wafer size and thickness) and the process that the wafer has passed. The warped state of the wafer that has undergone the same process shows the same tendency.

したがって、同じ工程を経たウエハ(同一ロットのウエハ)の検査を行なう場合には、予めウエハの反りの状態を測定したり、目視で反りの状態を確認したりすることによって、ウエハの種類やウエハの経た工程毎にウエハの反りの状態を把握して、検査を行うウエハの種類毎に予め搬送条件をレシピ5に記憶させればよい。   Therefore, when inspecting wafers that have undergone the same process (wafers of the same lot), the type of wafer and the wafer are measured by measuring the state of warpage of the wafer in advance or by visually checking the state of warpage. It is only necessary to grasp the state of warpage of the wafer for each process, and store the transfer conditions in the recipe 5 in advance for each type of wafer to be inspected.

この第1実施形態によれば、ウエハの反りに起因する基板検査装置の停止回数が減るので、ウエハ搬送時における作業者の煩わしさを解消することができる
図3はこの発明の第2実施形態に係る基板検査装置のブロック図であり、第1実施形態と共通する部分には同一符号を付してその説明を省略する。
According to the first embodiment, since the number of times the substrate inspection apparatus is stopped due to the warpage of the wafer is reduced, it is possible to eliminate the troublesomeness of the operator during wafer transfer. FIG. 3 shows the second embodiment of the present invention. 1 is a block diagram of the substrate inspection apparatus according to the first embodiment, and the same reference numerals are given to the same parts as those in the first embodiment, and the description thereof is omitted.

この第2実施形態は、レシピ5に記憶した反り情報に基づいて搬送条件を変更するのではなく、実際に基板検査装置が停止したときに受け渡しのリトライ等をモニタ6に配置されたリトライ入力部6A−2を操作することにより行なうことができるようにした点で第1実施形態と相違する。   This second embodiment does not change the conveyance conditions based on the warpage information stored in the recipe 5, but a retry input unit in which a retry of delivery or the like is arranged on the monitor 6 when the substrate inspection apparatus actually stops This is different from the first embodiment in that it can be performed by operating 6A-2.

制御部14には入力エリア6Aを表示するモニタ6が接続されている。なお、制御部14のレシピ15には測定・検査のプログラムが記憶されている。   The control unit 14 is connected to a monitor 6 that displays the input area 6A. The recipe 15 of the control unit 14 stores a measurement / inspection program.

入力エリア6Aには解除ボタン6A−1とリトライ入力部6A−2とが隣接配置されている。   In the input area 6A, a release button 6A-1 and a retry input unit 6A-2 are arranged adjacent to each other.

解除ボタン6A−1はウエハの反りに起因する基板検査装置の停止状態を解除するためのボタンである。   The release button 6A-1 is a button for releasing the stop state of the substrate inspection apparatus caused by the warpage of the wafer.

リトライ入力部6A−2には図示しないがウエハの反りに起因して基板検査装置が停止したときにウエハの受け渡しのリトライを実行させるためのリトライボタン6A−21と真空圧のしきい値や真空圧、ウエハの周辺と中心部に対する真空圧の分布、搬送速度等を設定・変更するための条件入力部(設定手段)6A−22とが配置されている。条件入力部6A−22で設定・変更された搬送条件は搬送部2にフィードバックされる。   Although not shown in the retry input section 6A-2, a retry button 6A-21 for executing retry of wafer transfer when the substrate inspection apparatus is stopped due to warpage of the wafer, a threshold value of vacuum pressure or vacuum A condition input unit (setting unit) 6A-22 for setting / changing the pressure, the distribution of the vacuum pressure with respect to the periphery and center of the wafer, the transfer speed, and the like are arranged. The conveyance conditions set / changed by the condition input unit 6A-22 are fed back to the conveyance unit 2.

この第2実施形態ではウエハの反りに起因して基板検査装置が停止したとき、モニタ6の画面上のリトライボタン6A−21を操作してリトライ操作を行なったり、条件入力部6A−22を操作して真空圧のしきい値、真空圧、ウエハに対する真空圧の分布、搬送速度等の搬送条件を変更したりする。   In the second embodiment, when the substrate inspection apparatus is stopped due to warpage of the wafer, the retry operation is performed by operating the retry button 6A-21 on the screen of the monitor 6, or the condition input unit 6A-22 is operated. Then, transfer conditions such as a vacuum pressure threshold, a vacuum pressure, a distribution of vacuum pressure on the wafer, and a transfer speed are changed.

なお、真空圧のしきい値を変更した場合、ウエハの落下を防止するため、変更されたしきい値に対して許容されるウエハの搬送速度以上の搬送速度を条件入力部6A−22で設定することはできない。   When the vacuum pressure threshold is changed, the condition input unit 6A-22 sets a transfer speed that is higher than the allowable wafer transfer speed with respect to the changed threshold value in order to prevent the wafer from falling. I can't do it.

この第2実施形態によれば、モニタ6の画面上にリトライボタン6A−21と条件入力部6A−22とが隣接配置されており、条件入力部6A−22を操作することによりしきい値や真空圧を変更することができるので、ウエハ搬送時における作業者の煩わしさを解消することができる。また、ウエハキャリア部1に収納されるウエハの反り条件が異なっていても、ウエハ毎に最適な搬送条件を設定することができる。   According to the second embodiment, the retry button 6A-21 and the condition input unit 6A-22 are arranged adjacent to each other on the screen of the monitor 6, and the threshold value and the condition input unit 6A-22 are operated by operating the condition input unit 6A-22. Since the vacuum pressure can be changed, the troublesomeness of the operator at the time of wafer transfer can be eliminated. Further, even if the warping conditions of the wafers stored in the wafer carrier unit 1 are different, the optimum transfer conditions can be set for each wafer.

図1はこの発明の第1実施形態に係る基板検査装置のブロック図である。FIG. 1 is a block diagram of a substrate inspection apparatus according to a first embodiment of the present invention. 図2は搬送アームのウエハ吸着部の平面図である。FIG. 2 is a plan view of the wafer suction portion of the transfer arm. 図3はこの発明の第2実施形態に係る基板検査装置のブロック図である。FIG. 3 is a block diagram of a substrate inspection apparatus according to the second embodiment of the present invention.

符号の説明Explanation of symbols

1:ウエハキャリア部(基板収納部)、2:搬送部(搬送手段)、3:検査ステージ、4,14:制御部(制御手段)、5:レシピ(登録手段)、6:モニタ、6A−2:リトライ入力部、6A−21:リトライボタン、6A−22:条件入力部(設定手段)。   1: Wafer carrier part (substrate storage part) 2: Transport part (transport means) 3: Inspection stage 4, 14: Control part (control means) 5: Recipe (registration means) 6: Monitor 6A- 2: Retry input unit, 6A-21: Retry button, 6A-22: Condition input unit (setting means).

Claims (3)

検査対象の基板を収納する基板収納部と、
前記基板を真空吸着して前記基板収納部から検査ステージに搬送する搬送手段と、
前記基板を吸着する部分の真空度と所定のしきい値とに基づいて前記基板の有無を判定する判定手段と、
前記基板の反りに関わる情報を登録する登録手段と、
前記登録手段に登録された反りに関わる情報に基づいて前記基板を吸着する部分と前記基板との離れ具合が大きいときには前記しきい値を下げて前記基板の有無を確認する制御を行う制御手段と
を備えていることを特徴とする基板検査装置。
A substrate storage section for storing a substrate to be inspected;
Transport means for vacuum-sucking the substrate and transporting the substrate from the substrate storage unit to an inspection stage;
Determining means for determining the presence or absence of the substrate based on a degree of vacuum of a portion that adsorbs the substrate and a predetermined threshold;
Registration means for registering information related to warpage of the substrate;
Control means for performing control to lower the threshold value and confirm the presence or absence of the substrate when the degree of separation between the portion adsorbing the substrate and the substrate is large based on information related to warpage registered in the registration means; A board inspection apparatus comprising:
前記制御手段は、反りに関わる情報に基づいて前記基板を吸着する部分と前記基板との離れ具合が大きいときには前記基板を前記搬送する速度を下げることを特徴とする請求項1記載の基板検査装置。   2. The substrate inspection apparatus according to claim 1, wherein the control means reduces the speed at which the substrate is conveyed when the degree of separation between the portion that adsorbs the substrate and the substrate is large based on information related to warpage. . 前記制御手段からの指示に基づいて前記搬送手段の基板吸着部の中心部の吸着真空圧とその外周部の吸着真空圧とが独立に制御され、
前記基板の搬送条件は前記真空圧の分布であり前記反りにより前記基板を吸着する部分と前記基板との離れ具合が大きいところの前記真空圧を上げることを特徴とする請求項1又は2記載の基板検査装置。
Based on the instruction from the control means, the suction vacuum pressure at the center of the substrate suction portion of the transport means and the suction vacuum pressure at the outer periphery thereof are independently controlled,
The transport condition of the substrate is the distribution of the vacuum pressure, and the vacuum pressure is increased at a portion where the substrate is adsorbed by the warp and the substrate is largely separated. Board inspection equipment.
JP2005165316A 2005-06-06 2005-06-06 Board inspection equipment Expired - Fee Related JP4737392B2 (en)

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JP4678788B2 (en) * 2007-04-23 2011-04-27 株式会社不二越 Thin wafer transfer method
JP4678787B2 (en) * 2007-04-23 2011-04-27 株式会社不二越 Suction hand for thin wafer transfer
JP2009135433A (en) * 2007-11-05 2009-06-18 Hitachi Kokusai Electric Inc Substrate processing apparatus
US9752992B2 (en) * 2014-03-25 2017-09-05 Kla-Tencor Corporation Variable image field curvature for object inspection
JP6723131B2 (en) * 2016-09-29 2020-07-15 株式会社Screenホールディングス Substrate transfer device and substrate transfer method

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