JP4732326B2 - 基板を洗浄するための化合物,洗浄溶液,システムおよび方法 - Google Patents
基板を洗浄するための化合物,洗浄溶液,システムおよび方法 Download PDFInfo
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- JP4732326B2 JP4732326B2 JP2006351427A JP2006351427A JP4732326B2 JP 4732326 B2 JP4732326 B2 JP 4732326B2 JP 2006351427 A JP2006351427 A JP 2006351427A JP 2006351427 A JP2006351427 A JP 2006351427A JP 4732326 B2 JP4732326 B2 JP 4732326B2
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- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Chemical class 0.000 description 1
- 239000011737 fluorine Chemical class 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- KXUHSQYYJYAXGZ-UHFFFAOYSA-N isobutylbenzene Chemical compound CC(C)CC1=CC=CC=C1 KXUHSQYYJYAXGZ-UHFFFAOYSA-N 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 150000002540 isothiocyanates Chemical class 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 239000006194 liquid suspension Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000004713 phosphodiesters Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 150000003077 polyols Chemical group 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000003190 viscoelastic substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/02—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
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- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
- C11D17/0013—Liquid compositions with insoluble particles in suspension
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
- C11D17/0017—Multi-phase liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2079—Monocarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
- C11D7/262—Alcohols; Phenols fatty or with at least 8 carbon atoms in the alkyl or alkenyl chain
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D9/00—Compositions of detergents based essentially on soap
- C11D9/02—Compositions of detergents based essentially on soap on alkali or ammonium soaps
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D9/00—Compositions of detergents based essentially on soap
- C11D9/04—Compositions of detergents based essentially on soap containing compounding ingredients other than soaps
- C11D9/22—Organic compounds, e.g. vitamins
- C11D9/26—Organic compounds, e.g. vitamins containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D9/00—Compositions of detergents based essentially on soap
- C11D9/04—Compositions of detergents based essentially on soap containing compounding ingredients other than soaps
- C11D9/22—Organic compounds, e.g. vitamins
- C11D9/26—Organic compounds, e.g. vitamins containing oxygen
- C11D9/267—Organic compounds, e.g. vitamins containing oxygen containing free fatty acids
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
- C23G1/18—Organic inhibitors
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
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- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
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Description
水を摂氏70度(ステアリン酸の融点)より高く加熱する。固体のステアリン酸(約0.1重量%ないし約10重量%)を摂氏70度より高く加熱し、温水に加える。不混和性のステアリン酸が連続水相内で分散又は乳化する速度で、水−ステアリン酸混合物を撹拌する。塩基を追加し、約50%のカルボン酸が解離する点、即ち、解離定数(pKn)が約50%となる点までpHを上昇させることで、ステアリン酸のイオン化を開始する。これにより、約10.2のpHが生じる。pHを上昇させるために溶液に追加する塩基の例は、水酸化アンモニウム(NH4OH)である。NH4OHの濃度は、約0.25重量%ないし約10重量%の範囲にできる。ステアリン酸/水/NH4OH混合物を更に20分間撹拌し、均一な溶液を形成する。溶液を周囲温度に冷却し、10時間以上そのまま置き、沈殿、即ち固体成分を形成する。撹拌中、空気を混合物に入れることが可能だが、これは必須ではない。こうした沈殿粒子(固体成分)のサイズ分布は、約50ナノメートルないし約5000マイクロメートルである。
粒状のステアリン酸を、約0.5ないし約5000マイクロメートルの粒子サイズ分布まで製粉する。任意の市販の製粉機により、このサイズ分布を達成し得る。粒状形態の製粉ステアリン酸(約0.1重量%ないし約10重量%)を水に追加し、同時に溶液をかき混ぜる。溶液は、振動、撹拌、回転等によりかき混ぜることができる。塩基を追加し、約50%のカルボン酸が解離する点、即ち、pKnが約50%となる点までpHを上昇させることで、ステアリン酸の解離を開始する。これにより、10.2を超えるpHが生じる。pHを上昇させるために溶液に追加する塩基の例は、水酸化アンモニウム(NH4OH)である。NH4OHの濃度は、約0.5重量%ないし約10重量%の範囲にできる。溶液をかき混ぜながらNH4OHを水溶液に追加することで、固体ステアリン酸成分を連続水相に分散させる。イオン化固体ステアリン酸成分は、撹拌なしで連続水相において懸濁状態を維持する。こうした粒子のサイズ分布は、約0.5ないし約5,000マイクロメートルである。
イソプロパノール(isopropanol, IPA)中において、溶液をかき混ぜて、ステアリン酸及びパルミチン酸の混合物を溶解させる。溶媒中の溶解した脂肪酸の濃度は、約2重量%ないし20重量%の範囲にできる。溶媒の沸点を下回る溶媒の加熱、或いは、アセトン又はベンゼン等、別の有機溶媒又は複数の溶媒の追加により、脂肪酸の溶解性を改善できる。溶液は、振動、撹拌、回転等によりかき混ぜることができる。溶解完了後、濾過又は遠心分離により残りの固体を除去できる。次に、固体のない溶液を水に混合し、脂肪酸を沈殿させる。沈殿した脂肪酸は、約0.5ないし約5,000ミクロンの範囲のサイズ分布で溶液中に懸濁する。
Claims (45)
- 洗浄化合物であって、
約0.5重量%ないし約10重量%の割合で水に分散した脂肪酸と、
前記脂肪酸が分散した水溶液のpHを、前記脂肪酸の約50%がイオン化する10.2以上のレベルにする量の塩基と、
液相の状態で前記水に分散した第1の不混和化合物と、
気相の状態で前記水に分散した第2の不混和化合物と
を備える洗浄化合物。 - 前記脂肪酸は、ステアリン酸である請求項1に記載の洗浄化合物。
- 前記脂肪酸は、ラウリン酸,パルミチン酸,ステアリン酸,オレイン酸,リノール酸,リノレン酸,アラキドン酸,ガドレイン酸,エルカ酸,ブチル酸,カプ ロン酸,カプリル酸,ミリスチン酸,マルガリン酸,ベヘン酸,リグノセリン酸,ミリストレイン酸,パルミトレイン酸,ネルボン酸,パリナリン酸,ティムノ ドン酸,ブラシジン酸,クルパノドン酸、およびそれらの混合物から成る群から選択される請求項1に記載の洗浄化合物。
- 前記脂肪酸の粒子サイズ分布は、約50ナノメートルないし5000マイクロメートルである請求項1に記載の洗浄化合物。
- 前記脂肪酸の酸部分は、炭酸,スルホン酸,ホスホン酸から成る群から選択される請求項1に記載の洗浄化合物。
- 前記脂肪酸は前記水に加えられる前に融解される請求項1に記載の洗浄化合物。
- 約0.1重量%ないし約10重量%の割合で前記水に分散した他の脂肪酸を更に備える請求項1に記載の洗浄化合物。
- 基板を洗浄する基板洗浄方法であって、
第1の不混和液を第2の不混和液に化合させた乳濁液を、前記基板の表面に供給する工程であって、前記第2の不混和液は前記第1の不混和液の中に分散する複数の液滴を形成し、前記乳濁液は前記第1の不混和液の中に分布した固体粒子を更に有する、工程と、
前記基板の前記表面に対する垂直成分を有する力を、前記基板に供給された固体粒子の一つに加えることによって、該固体粒子の一つを、前記基板の前記表面上の汚染物と相互作用可能な領域へ移動させる工程と、
前記汚染物に相互作用した固体粒子を前記基板の前記表面から除去する工程と
を備え、
前記乳濁液は、
約0.5重量%ないし約10重量%の割合で水に分散した脂肪酸と、
前記脂肪酸が分散した水溶液のpHを、前記脂肪酸の約50%がイオン化する10.2以上のレベルにすることが可能な量の塩基と、
液相の状態で前記水に分散した第1の不混和化合物と、
気相の状態で前記水に分散した第2の不混和化合物と
を含む、基板洗浄方法。 - 前記第1の不混和化合物は非極性溶媒である請求項8に記載の基板洗浄方法。
- 前記非極性溶媒は、芳香族炭化水素溶媒,脂肪族炭化水素溶媒,環式炭化水素溶媒,ケトン溶媒,炭酸塩溶媒,ハロゲン化炭化水素溶媒,アルコール溶媒,エステル溶媒,エーテル溶媒,ミン溶媒、およびそれらの混合物から成る群から選択される請求項9に記載の基板洗浄方法。
- 前記固体粒子は、界面活性材料の凝集体である請求項8に記載の基板洗浄方法。
- 前記固体粒子は、前記第1の不混和液に分散された後、界面活性を有するように変化する請求項8に記載の基板洗浄方法。
- 前記固体粒子は、イオン化によって界面活性を有するように変化する請求項12に記載の基板洗浄方法。
- 前記第1の不混和液のpHを上昇させることによって、前記イオン化を開始する請求項13に記載の基板洗浄方法。
- 前記第1の不混和液に分散する複数の液滴を形成する第3の不混和液を、前記第1および第2の不混和液に加える工程を更に備える請求項8に記載の基板洗浄方法。
- 基板を洗浄する洗浄システムであって、
前記基板の表面上に配置可能に構成された洗浄ヘッドと、
分散相および連続相を有する洗浄溶液であって前記連続相内に粒子を分散した洗浄溶液を、前記洗浄ヘッドに送給する洗浄溶液貯蔵部と
を備え、
前記洗浄溶液は、
約0.5重量%ないし約10重量%の割合で水に分散した脂肪酸と、
前記脂肪酸が分散した水溶液のpHを、前記脂肪酸の約50%がイオン化する10.2以上のレベルにすることが可能な量の塩基と、
液相の状態で前記水に分散した第1の不混和化合物と、
気相の状態で前記水に分散した第2の不混和化合物と
を含む、洗浄システム。 - 請求項16に記載の洗浄システムであって、
前記洗浄ヘッドは、
前記洗浄溶液貯蔵部から送給された洗浄溶液を、前記基板の表面上に供給する洗浄部と、
前記洗浄部の下流側に位置し、前記基板の表面上を濯ぐ濯ぎ部と、
前記洗浄部の下流側に位置し、前記基板の表面上を乾燥させる乾燥部と
を含む洗浄システム。 - 前記分散相および前記連続相は、共通の物理的状態を有する請求項16に記載の洗浄システム。
- 前記洗浄溶液は、加圧下において、単一の物理的状態で前記洗浄溶液貯蔵部に貯蔵され、大気圧下において、複数の物理的状態で前記洗浄ヘッドに送給される請求項16に記載の洗浄システム。
- 前記洗浄ヘッドを固定した請求項16に記載の洗浄システム。
- 前記洗浄ヘッドを前記基板に対して可動にした請求項16に記載の洗浄システム。
- 前記洗浄ヘッドは、前記洗浄溶液貯蔵部から送給された洗浄溶液を、前記基板の表面上に供給する複数の洗浄部を含む請求項16に記載の洗浄システム。
- 前記洗浄溶液の分散相は、前記粒子を前記基板上の汚染物に近接させる力を提供する請求項16に記載の洗浄システム。
- 前記洗浄溶液の分散相は、前記粒子を前記基板上の汚染物から約10ナノメートル以内に押し付ける請求項16に記載の洗浄システム。
- 基板を洗浄する洗浄溶液であって、
脂肪酸をイソプロパノールに攪拌しながら加えることによって、約2重量%から約20重量%の濃度で前記脂肪酸を溶解したイソプロパノール溶液を生成し、
前記生成されたイソプロパノール溶液から未溶解の固体を除去し、
前記未溶解の固体を除去したイソプロパノール溶液を水と混合することによって、前記溶解した脂肪酸を沈殿させ、
前記沈殿した脂肪酸をイオン化させ、
前記水に液相の状態で第1の不混和化合物を分散させ、
前記水に気相の状態で第2の不混和化合物を分散させることによって製造された洗浄溶液。 - 前記イソプロパノールに溶解される脂肪酸は、ステアリン酸およびパルミチン酸の混合物を含む請求項25に記載の洗浄溶液。
- 前記生成されたイソプロパノール溶液を濾過することによって、該イソプロパノール溶液から未溶解の固体を除去した請求項25に記載の洗浄溶液。
- 前記水と混合されたイソプロパノール溶液に塩基を加えることによって、前記沈殿した脂肪酸をイオン化した請求項25に記載の洗浄溶液。
- 前記水と混合されたイソプロパノール溶液に塩基を加えて該イソプロパノール溶液のpHを10.2以上にすることによって、前記沈殿した脂肪酸をイオン化した請求項25に記載の洗浄溶液。
- 前記塩基は、約0.25重量%ないし約10重量%の濃度の水酸化アンモニウム(NH4OH)を含む請求項29に記載の洗浄溶液。
- 半導体基板を洗浄する洗浄化合物であって、
約0.5重量%ないし約10重量%の割合で水に分散した脂肪酸と、
前記脂肪酸が分散した水溶液のpHを、前記脂肪酸の約50%がイオン化する場合のレベルよりも高くする量の塩基と、
液相の状態で前記水に分散した第1の不混和化合物と、
気相の状態で前記水に分散した第2の不混和化合物と
から基本的に成る洗浄化合物。 - 前記脂肪酸は、ステアリン酸である請求項31に記載の洗浄化合物。
- 前記水溶液のpHは、約10.2である請求項31に記載の洗浄化合物。
- 前記脂肪酸は、ラウリン酸,パルミチン酸,ステアリン酸,オレイン酸,リノール酸,リノレン酸,アラキドン酸,ガドレイン酸,エルカ酸,ブチル酸,カプ ロン酸,カプリル酸,ミリスチン酸,マルガリン酸,ベヘン酸,リグノセリン酸,ミリストレイン酸,パルミトレイン酸,ネルボン酸,パリナリン酸,ティムノ ドン酸,ブラシジン酸,クルパノドン酸、およびそれらの混合物から成る群から選択される請求項31に記載の洗浄化合物。
- 前記脂肪酸の粒子サイズ分布は、約50ナノメートルないし5000マイクロメートルである請求項31に記載の洗浄化合物。
- 前記脂肪酸の酸部分は、炭酸,スルホン酸,ホスホン酸から成る群から選択される請求項31に記載の洗浄化合物。
- 約0.1重量%ないし約10重量%の割合で前記水に分散した他の脂肪酸を更に備える請求項31に記載の洗浄化合物。
- 前記脂肪酸は前記水に加えられる前に融解される請求項31に記載の洗浄化合物。
- 半導体基板を洗浄する洗浄化合物であって、
約0.5重量%ないし約10重量%の割合で水に分散した脂肪酸と、
前記脂肪酸が分散した水溶液のpHを、前記脂肪酸の約50%がイオン化する場合のレベルよりも高くする量の塩基と、
液相の状態で前記水に分散した第1の不混和化合物と、
気相の状態で前記水に分散した第2の不混和化合物と
から成る洗浄化合物。 - 前記脂肪酸は、ステアリン酸である請求項39に記載の洗浄化合物。
- 前記水溶液のpHは、約10.2である請求項39に記載の洗浄化合物。
- 前記第2の不混和化合物は不活性ガスである請求項1に記載の洗浄化合物。
- 前記第2の不混和化合物は反応性ガスである請求項1に記載の洗浄化合物。
- 前記第1の不混和化合物はアルカンである請求項1に記載の洗浄化合物。
- 前記第1の不混和化合物は油溶性表面修飾物質である請求項1に記載の洗浄化合物。
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KR (2) | KR20070072377A (ja) |
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