JP4722951B2 - Plasma source with ferrite structure and plasma generator employing the same - Google Patents

Description

  The present invention relates to a plasma source having a ferrite structure and a plasma generator employing the same, and in particular, a ferrite structure is mounted in an arch shape on a linear antenna of a built-in inductively coupled plasma generator, and is formed radially from the linear antenna. Due to the field formed in the opposite direction of the processing substrate from the linear antenna so that a strong magnetic field is formed by the high magnetic permeability of the ferrite structure. The present invention relates to a plasma source including a ferrite structure that reduces power loss and a plasma generation apparatus that employs the plasma source.

  2. Description of the Related Art Generally, a plasma generating apparatus is a capacitively coupled plasma (CCP) in which a processing substrate is disposed between opposed flat plate type upper and lower electrodes, and plasma is generated using capacitor characteristics. A Capacitively Coupled Plasma (ICP) generator and an inductively coupled plasma (ICP) generator that generates a plasma by inducing a field in the reaction chamber by an upper coil facing a flat plate-shaped lower electrode. .

  In particular, the inductively coupled plasma (ICP) generator has a relatively simple structure as compared to an ECR (Electron Cyclotron Resonance) plasma generator and a HWEP (Helicon-Wave Excited Plasma) generator, so that it has a large area plasma. Has the advantage that it can be obtained, has been widely used, and research on it continues.

  In the inductively coupled plasma generator, a helical antenna source is disposed in the uppermost side with a chamber on which an etching target is placed at the lowermost part being exposed to the atmosphere. Between them is a dielectric material that insulates them and maintains a vacuum.

  However, such a helical antenna source causes various problems as the etching target is increased in area.

  That is, as the chamber is increased in size corresponding to the object to be etched, the size and thickness of the dielectric material that maintains the vacuum between the antenna source and the chamber become very large. As a result, the manufacturing cost of the inductively coupled plasma generator increases, and the distance between the antenna and the plasma increases, resulting in a problem that the efficiency decreases.

  In addition, as the reaction chamber becomes larger, the length of the antenna source also increases, and as the length increases, the applied power loss due to the antenna resistance and the plasma non-uniformity increase. As a result, the etching rate is lowered.

  Furthermore, when using a 13.56 MHz power supply as the applied power, a standing wave effect (standing wave effect: two waves with the same amplitude and frequency are opposite to each other) If the shape that appears to be superimposed on the surface of the film appears, the problem that the wave appears to have stopped) is caused, and it becomes impossible to increase the area further.

  On the other hand, in order to solve the above-mentioned problems, the applicant of the present patent application disclosed in Korean Patent Application No. 2003-28849 of Patent Document 1 as “Inductively coupled plasma processing treatment with built-in linear antenna for large area processing”. Have applied for a "super-large-area plasma generator using a magnetic field" in Korean Patent Application No. 2004-17227 of Patent Document 2. The configuration will be briefly introduced below.

  First, as shown in FIG. 1a, an inductively coupled plasma processing treatment including a large area processing built-in linear antenna described in Korean Patent Application No. 2003-28849 of Patent Document 1 includes a reaction chamber 1, an induction power Is applied and is linearly arranged at a constant interval horizontally inside the reaction chamber 1, and the reaction chamber 1 is connected to one side of the exposed portion adjacent to each other. Two refracted linear antennas 2 and at least one or more arranged adjacent to the antenna 2 so as to generate a magnetic field that intersects the electric field generated from the linear antenna 2 so that electrons spirally move. The magnetic body 3 is included.

  At this time, in order to prevent the linear antenna 2 and the magnetic body 3 from being directly exposed to the plasma, each is surrounded by protective tubes 4 and 5 made of quartz, respectively, A stage 6 on which a processing substrate is disposed is provided.

  Next, as shown in FIG. 1b, an ultra-large area plasma generator using a magnetic field described in Korean Patent Application No. 2004-17227 includes a reaction chamber 8 including a stage 7 on which an etching substrate is mounted, In the plasma generating apparatus comprising a plurality of antenna rods 9 and 10 and an antenna source 11 arranged so as to cross each other in parallel, each of the antenna rods 9 and 10 has a plurality of magnetic bodies 12 on the top. It is provided. In this case, the antenna rods 9 and 10 and the magnetic body 12 are surrounded by protective tubes 13 and 14 made of quartz to prevent direct exposure to plasma. One side of each of the antenna sources 11 is connected to the RF power supply unit 15 and the other side is grounded.

Korean Patent Application No. 2003-28849 Korean Patent Application No. 2004-17227

  However, in the technique disclosed in the document, a field is formed radially from the linear antenna, and the plasma is not concentrated on the processing substrate, and the plasma is excited to a region outside the processing substrate, resulting in a large power loss. There was a problem.

  Further, since the plasma is excited to an unnecessary portion, the density of the plasma concentrated on the processing substrate is relatively low, and there is a problem that the time required for the semiconductor manufacturing process increases.

  Further, when the field formed by each of the linear antennas is not relatively uniform, it is not easy to correct this, and there is a problem that it is difficult to generate uniform plasma inside the reaction chamber.

  An object of the present invention is to solve the above-described problems. A ferrite structure is mounted in an arch shape on a linear antenna of a built-in inductively coupled plasma generator, and is formed radially from the linear antenna. It is an object of the present invention to provide a plasma source including a ferrite structure that can concentrate a field to be processed on a processing substrate, and a plasma generator using the plasma source.

  Another object of the present invention is to form a strong magnetic field using a ferrite structure that has a high magnetic permeability and is strongly magnetized in the same direction as the magnetic field in an external magnetic field, An object of the present invention is to provide a plasma source including a ferrite structure capable of reducing power loss due to a field formed in a direction opposite to a processing substrate from the linear antenna, and a plasma generator employing the plasma source.

  Still another object of the present invention is to provide a ferrite structure that can increase the plasma density and uniformity by installing an arched ferrite structure on a built-in linear antenna for a large-area high-density plasma process. It is an object of the present invention to provide a plasma source and a plasma generator using the same.

  Still another object of the present invention is to provide a plasma source including a ferrite structure in which an arched ferrite structure is mounted on a linear antenna and the efficiency and yield of a semiconductor manufacturing process can be improved, and a plasma employing the plasma source. It is to provide a generator.

  The above and other objects and novel features of the present invention will become more apparent from the detailed description of the invention and the accompanying drawings.

In order to achieve the above object, a plasma source including a ferrite structure according to an aspect of the present invention has a linear shape formed by connecting one side of each of a linear first antenna and a second antenna in a loop shape. An antenna, and a ferrite structure positioned on each of the first antenna and the second antenna of the linear antenna and concentrating a field formed radially from the antenna in one direction. It is characterized by.

  The plasma source including the ferrite structure according to the present invention is characterized in that the ferrite structure is formed in an arch type.

  The plasma source including the ferrite structure according to the present invention is characterized in that the ferrite structure is composed of a plurality of ferrite structures, and teflon is interposed between the ferrite structures.

  The plasma source including the ferrite structure according to the present invention is characterized in that the plurality of ferrite structures are formed with different sizes or thicknesses.

  In the plasma source comprising the ferrite structure according to the present invention, the Teflon is any one substance selected from PTFE (Polytetrafluoroethylene), PFA (Perfluoroalkoxy), FEP (Fluoroethylenepropylene) and PVDF (Polyvinylidene fluoride). It is characterized by comprising.

  The plasma source having a ferrite structure according to the present invention is characterized in that the linear antenna is inserted into an induction coil protective tube made of quartz.

  In the plasma source including the ferrite structure according to the present invention, the linear antenna is made of any one material selected from copper, stainless steel, silver, and aluminum.

According to another aspect of the present invention, there is provided a plasma generator employing a plasma source including a ferrite structure, and a reaction chamber that is a space in which plasma is generated, and an inside upper part of the reaction chamber that penetrates the reaction chamber and mutually And at least one linear antenna formed in a loop shape by connecting one side of the linear first antenna and the second antenna adjacent to each other, arranged at regular intervals and exposed to the outside of the reaction chamber. In the plasma generating apparatus, the power supply unit electrically connected to one side of the linear antenna, the first antenna and the second antenna formed inside the reaction chamber, respectively, the linear Ferrule for concentrating a field formed radially from an antenna toward a processing substrate disposed in the reaction chamber And further comprising a preparative structure, a.

According to still another aspect of the present invention, there is provided a plasma generator employing a plasma source including a ferrite structure, and a reaction chamber in which a space for generating plasma is formed, and the reaction chamber is penetrated at an upper part inside the reaction chamber. First and second linear antennas arranged at regular intervals from each other, wherein the first linear antenna is exposed to the outside of the reaction chamber and is adjacent to each other. An antenna, wherein the first antenna and the second antenna are connected in one side to form a loop , and the second linear antenna is constant between each of the first and second antennas. In the plasma generator including the third and fourth antennas arranged at intervals, a power supply unit electrically connected to one side of each of the first and second linear antennas; A ferrite positioned on each of the antennas formed inside the reaction chamber and concentrating a field formed radially from the linear antenna toward a processing substrate disposed in the reaction chamber; And a structure.

  The plasma generator employing the plasma source having the ferrite structure according to the present invention is characterized in that the ferrite structure is formed in an arch type.

  Also, the plasma generator employing the plasma source having the ferrite structure according to the present invention is characterized in that the ferrite structure is composed of a large number, and Teflon is interposed between the ferrite structures. .

  The plasma generator employing the plasma source including the ferrite structure according to the present invention is characterized in that the plurality of ferrite structures are formed with different sizes or thicknesses.

  In the plasma generator employing the plasma source having the ferrite structure according to the present invention, the Teflon is selected from PTFE (Polytetrafluoroethylene), PFA (Perfluoroalkoxy), FEP (Fluoroethylenepropylene), and PVDF (Polyvinylidene fluoride). It is characterized by comprising any one substance.

  In the plasma generator employing the plasma source including the ferrite structure according to the present invention, the power supply unit is driven at a frequency in the range of 100 KHz to 30 MHz.

  The plasma generator employing the plasma source having the ferrite structure according to the present invention is characterized in that the other side of each of the linear antennas is grounded.

  Also, in the plasma generator employing the plasma source having the ferrite structure according to the present invention, the power supply units connected to each of the linear antennas may be mutually connected so as to make the plasma density inside the reaction chamber uniform. It is characterized by being controlled independently.

  As described above, according to the plasma source including the ferrite structure according to the present invention and the plasma generator using the same, the ferrite structure is mounted in an arch shape on the linear antenna of the built-in inductively coupled plasma generator. The effect that the field formed radially from the antenna can be concentrated on the processing substrate is obtained.

  In addition, according to the plasma source including the ferrite structure according to the present invention and the plasma generator using the same, the magnetic source has a high magnetic permeability and is strongly magnetized in the same direction as the magnetic field in the external magnetic field. A strong magnetic field is formed by using the ferrite structure, and the power loss due to the field formed in the opposite direction of the processing substrate from the linear antenna can be reduced.

  In addition, according to the plasma source including the ferrite structure according to the present invention and the plasma generator using the same, the arched ferrite structure is installed on the built-in linear antenna for a large area high-density plasma process, and the plasma It is also possible to increase the density and uniformity of the film.

  In addition, according to the plasma source including the ferrite structure according to the present invention and the plasma generator using the same, the arched ferrite structure is mounted on the linear antenna, thereby improving the efficiency and yield of the semiconductor manufacturing process. The effect that it can do is also acquired.

Hereinafter, the configuration of the present invention will be described in detail with reference to the drawings.
In the description of the present invention, the same parts are denoted by the same reference numerals, and repeated description thereof is omitted.

  FIG. 2 is a perspective view illustrating a plasma source including a ferrite structure according to the first embodiment of the present invention. FIG. 3 is a perspective view illustrating a plasma source including a ferrite structure according to the second embodiment of the present invention. FIG.

  As shown in FIG. 2, the plasma source 100 according to the first embodiment of the present invention includes a linear antenna 21 and a ferrite structure 23a formed on the linear antenna 21.

The linear antenna 21 is formed into a loop-type (loop type) by connecting the first antenna 25 and the one side of the second antenna 27 each linear. The linear antenna 21 is inserted into an induction coil protection tube 29 made of quartz. The linear antenna 21 may be made of any one material selected from, for example, copper, stainless steel, silver, and aluminum.

  The ferrite structure 23a is formed in an arch type on each of the antennas 25 and 27, and serves to concentrate a field formed radially from the antennas 25 and 27 in one direction. In other words, the ferrite structure 23a is formed such that the field formed radially from the linear antenna 21 is formed outward from the surface of the linear antenna 21 where the ferrite structure 23a is not formed.

  In contrast to this, the ferrite structure 23a is manufactured in a planar type covering all the antennas 25 and 27, or manufactured in various forms that can concentrate the field in the direction of the processing substrate. Can be done. In this case, the ferrite structure 23a can be adjusted in area to adjust the plasma uniformity and plasma characteristics, and the angle on the antennas 25 and 27 to change the plasma uniformity and field direction. It is installed so that it can be adjusted.

  The ferrite structure 23a is a kind of ferrimagnetic substance having a large magnetic permeability, and has a characteristic that it is strongly magnetized in the same direction as the magnetic field in an external magnetic field. Therefore, the plasma source 100 including the ferrite structure 23a can form a relatively strong magnetic field as compared with the conventional plasma source and can realize a high plasma density.

  As shown in FIG. 3, the plasma source 101 according to the second embodiment of the present invention includes a first antenna 25 and a plurality of ferrite structures 23b formed on each of the second antennas 27.

  The plurality of ferrite structures 23b are locally installed as compared with the plasma source 100 according to the first embodiment, and are installed with different sizes and thicknesses to adjust the plasma uniformity. In addition, the uniformity of plasma can be adjusted by interposing an insulating material including teflon 31 between the plurality of adjacent ferrite structures 23b. In this case, the Teflon 31 is composed of any one substance selected from PFA (Perfluoroalkoxy), PTFE (Polytetrafluoroethylene), PVDF (Polyvinylidene fluoride) and FEP (Fluoroethylenepropylene).

  As a result, the plasma source 101 is easier to mount than the plasma source 100 according to the first embodiment, and is generated by the antennas 25 and 27 by detaching a part of the plurality of ferrite structures 23b. The plasma can be controlled to be uniform.

In the present embodiment, the plasma sources 100 and 101 are only referred to as a loop type . However, if necessary, the plasma sources 100 and 101 may be manufactured linearly or may be manufactured in a comb type. Also, the ferrite structures 23a and 23b may be mounted on a spiral type linear antenna according to the manufacturing process. The ferrite structure 23b can be manufactured in a plate shape that covers all the antennas 25 and 27, or can be manufactured in various forms that can concentrate the field in the direction of the processing substrate.

  Next, a plasma generator according to an embodiment of the present invention will be described in detail with reference to FIGS.

  4 is a perspective view schematically showing a plasma generator equipped with a plasma source according to a first embodiment of the present invention, and FIG. 5 is a cross-sectional view taken along the cutting line AA ′ of FIG. .

  As shown in FIGS. 4 and 5, a stage 43 on which a processing substrate for performing a plasma etching process or a deposition process can be mounted on the lower side of a reaction chamber 41 in which a space for generating plasma is formed. Is done. In this case, the processing substrate may be a 300 mm or more wafer for manufacturing a semiconductor element or a substrate for manufacturing a flat display. An exhaust line connected to a vacuum pump (not shown) is formed at the bottom of the reaction chamber 41 or a part of the side wall.

  The stage 43 is installed to be driven up and down, and can be configured in the form of an electrostatic chuck. A bias power unit is connected so that bias power can be applied to the stage 43, and bias voltage measuring means (not shown) capable of measuring the bias voltage is further installed.

On the other hand, a plurality of linear antennas 21 are mounted on the inner upper portion of the reaction chamber 41 so as to penetrate the reaction chamber 41, and both end portions are exposed to the outside from the side surfaces of the reaction chamber 41. In each of the linear antennas 21, a linear first antenna 25 and a second antenna 27 are connected to each other in series outside the reaction chamber 41 and bent into a loop shape .

  Each of the antennas 25 and 27 is formed in a structure inserted into the induction coil protection tube 29 and maintains linearity on the upper side inside the reaction chamber 41. One end of the linear antenna 21 is connected to a power supply unit 47 for inductive discharge, and the other end not connected to the power supply unit 47 is grounded. The power supply unit 47 is driven within a frequency range of 100 KHz to 30 MHz.

  When the power supply unit 47 is driven in a frequency range lower than the frequency of 30 MHz, for example, 4 MHz or 2 MHz, the impedance and current distribution characteristics of the linear antenna 21 depending on the frequency are improved, and heat generated in the plasma source 100 is generated. The amount is reduced and the power characteristics absorbed by the generated plasma are improved.

  The linear antenna 21 is formed of, for example, any one material selected from copper, stainless steel, silver, and aluminum, and the induction coil protection tube 29 is capable of withstanding sputtering. Can consist of

  A ferrite structure 23 a is formed on each of the antennas 25 and 27. The ferrite structure 23 a is formed in an arch shape, and concentrates the field formed radially from the antennas 25 and 27 in the direction of the processing substrate mounted on the stage 43.

  In contrast to this, the ferrite structure 23 a may be manufactured in a plate shape covering all the antennas 25 and 27. In this case, the area of the plate-like ferrite structure 23a can be adjusted to adjust the plasma uniformity and plasma characteristics, and the uniformity of the plasma and the direction of the field can be changed on the antennas 25 and 27. So that the angle can be adjusted.

  Accordingly, since the plasma source 100 including the ferrite structure 23a has a high permeability of ferrite, it can form a relatively strong magnetic field as compared with the conventional plasma source and can realize a high plasma density and uniformity. The plasma source 100 reduces the power loss caused by the field formed in the opposite direction of the processing substrate. As a result, the efficiency of the etching process or the deposition process applied to the processing substrate is increased, and the yield of semiconductor device manufacturing is improved.

In the present embodiment, the reaction chamber 41 is formed in a rectangular parallelepiped shape, and the plasma source 100 has four loops formed independently of each other and the same size, but at both ends as necessary. The located loop may be configured to have a different size than the innerly located loop . By adjusting the size of the loop located at both ends of the reaction chamber 41, the density and uniformity of the plasma in the reaction chamber 41 can be controlled. As a result, by adjusting the number or size of the loops , it is possible to appropriately control the density and uniformity of the plasma generated in the future ultra-large area plasma generator.

  Meanwhile, a measurement device 49 for measuring the density and uniformity of plasma, for example, a Langmuir probe, is installed in the lower part of the reaction chamber 41. Thereby, the amount of ion saturation current and electron can be measured, and the density and uniformity of plasma can be measured.

  FIG. 6 is a perspective view schematically showing a plasma generator equipped with a plasma source according to a second embodiment of the present invention.

  As shown in FIG. 6, a plurality of ferrite structures 23b are installed on the first and second antennas 25 and 27, respectively. The plurality of ferrite structures 23b are locally installed compared to the plasma source 100 according to the first embodiment, and a Teflon 31 is interposed between the plurality of adjacent ferrite structures 23b.

  The plasma source 101 is relatively easy to mount and can be controlled so that the plasma generated by the antennas 25 and 27 is uniform by detaching a part of the plurality of ferrite structures 23b. . The description of the other components is the same as that of the plasma source according to the first embodiment, and will not be repeated.

  7 and 8 are perspective views schematically showing other plasma generators equipped with plasma sources according to the first and second embodiments of the present invention, respectively.

  As shown in FIGS. 7 and 8, other plasma generators are arranged at regular intervals through the reaction chamber 41 at the upper part inside the reaction chamber 41 where a space for generating plasma is formed. The first and second linear antennas 25 and 27 exposed to the outside of the reaction chamber 41 are connected to each other, and at least one first power supply 47 is electrically connected to one end. A second linear antenna 53 is provided in which another antenna 51 is arranged at a constant interval between one linear antenna 21 and the antennas 25 and 27, and one side of each of the other antennas 51 is connected to one. . The other antennas 51 can be referred to as third, fourth, and fifth antennas as necessary.

  A power supply unit 55 is connected to one side of the second linear antenna 53 and is located on each of the antennas 25, 27, 51 formed inside the reaction chamber 41, from the linear antennas 25, 27, 51. One or two or more ferrite structures 23a and 23b for concentrating the radially formed fields toward the processing substrate disposed in the reaction chamber 41 are located.

The comb-shaped plasma source as described above can effectively reduce the path through which the RF power supplied by the power supply unit passes, and completely eliminate the standing wave effect, similarly to the loop type described above. By using a ferrite structure, power loss can be prevented and the density and uniformity of the generated plasma can be increased.

  Although the present invention has been described in detail with reference to the above-described embodiments, the present invention is not limited to the above-described embodiments, and it is needless to say that various changes can be made without departing from the scope of the invention. For example, in this embodiment, the ferrite structure has been described as being mounted on an antenna applied to a built-in inductively coupled plasma ICP generator. However, the ferrite structure can be widely applied to an antenna of an exterior type inductively coupled plasma generator or a plasma generator in which an inductively coupled ICP and a capacitively coupled plasma CCP are mixed.

  The present invention relates to a plasma source including a ferrite structure and a plasma generator employing the same. The plasma source is configured to include a ferrite structure formed on a linear antenna, and the plasma generator using the plasma source uses a built-in ICP source and is used to etch a wafer of 300 mm or more. Evaporation can be applied to a semiconductor device manufacturing process or a next generation flat panel display manufacturing process. The ferrite structure can also be widely applied to an antenna of an exterior type inductively coupled plasma generator or a plasma generator in which inductive coupling and capacitively coupled plasma CCP are mixed.

1 is a perspective view showing a plasma generator having a built-in linear antenna according to the prior art. It is a perspective view which shows the ultra-large area plasma generator using the magnetic field by a prior art. It is a perspective view which shows the plasma source provided with the ferrite structure based on 1st Example of this invention. It is a perspective view which shows the plasma source provided with the ferrite structure based on 2nd Example of this invention. 1 is a perspective view schematically showing a plasma generator equipped with a plasma source according to a first embodiment of the present invention. FIG. 5 is a cross-sectional view taken along a cutting line AA ′ in FIG. 4. It is a perspective view which shows roughly the plasma generator which mounted | wore with the plasma source which concerns on 2nd Example of this invention. It is a perspective view which shows schematically the other plasma generator which mounted | wore with the plasma source which concerns on 1st Example of this invention. It is a perspective view which shows roughly the other plasma generator which mounted | wore with the plasma source which concerns on 2nd Example of this invention.

Explanation of symbols

21, 53 Linear antennas 23a, 23b Ferrite structures 25, 27, 51 Antenna 29 Inductive coil protection tube 31 Teflon 41 Reaction chamber 43 Stage 47, 55 Power supply unit 100, 101 Plasma source

Claims (14)

One linear antenna formed in a loop shape by connecting one side of each of the linear first antenna and the second antenna;
An arch type ferrite structure located on each of the first antenna and the second antenna of the linear antenna, the field formed radially from the antenna A ferrite structure that concentrates in a direction in which the ferrite structure is not formed ,
The ferrite structure is composed of a plurality of pieces, and a teflon is interposed between the ferrite structures.
The plasma source according to claim 1, wherein the plurality of ferrite structures are formed in different sizes or thicknesses.   The Teflon is composed of any one substance selected from PTFE (Polytetrafluoroethylene), PFA (Perfluoroalkoxy), FEP (Fluoroethylenepropylene), and PVDF (Poly vinylidene fluoride). Plasma source.   The plasma source of claim 2, wherein the linear antenna is inserted into an induction coil protection tube made of quartz.   The plasma source according to claim 3, wherein the linear antenna is made of any one material selected from copper, stainless steel, silver, and aluminum. A reaction chamber, which is a space in which plasma is generated, and a linear first antenna that is disposed at regular intervals through the reaction chamber at an upper portion inside the reaction chamber, is exposed to the outside of the reaction chamber, and is adjacent to each other And at least one linear antenna formed in a loop shape by connecting one side of the second antenna,
A power supply unit electrically connected to one side of the linear antenna;
A process that is located on each of the first antenna and the second antenna formed inside the reaction chamber and that has a field formed radially from the linear antenna disposed in the reaction chamber. A ferrite structure that is concentrated in the direction of the substrate,
The ferrite structure is formed in an arch type,
The ferrite structure is composed of a large number, and Teflon is interposed between each of the ferrite structures,
The plasma generating apparatus, wherein the plurality of ferrite structures are formed with different sizes or thicknesses.   The said Teflon is comprised with any one substance selected from PTFE (Polytetrafluoroethylene), PFA (Perfluoroalkoxy), FEP (Fluoroethylenepropylene), and PVDF (Polyvinylidene fluoride), The Claim 5 characterized by the above-mentioned. Plasma generator.   The plasma generator according to claim 5, wherein the power supply unit is driven at a frequency in a range of 100 KHz to 30 MHz.   8. The plasma generating apparatus according to claim 7, wherein the other side of each of the linear antennas is grounded.   9. The plasma generator according to claim 8, wherein power supply units connected to each of the linear antennas are controlled independently of each other so as to make the plasma density inside the reaction chamber uniform. . A reaction chamber in which a space in which plasma is generated is formed; and first and second linear antennas that are disposed at regular intervals through the reaction chamber at an upper portion inside the reaction chamber;
The first linear antenna includes a linear first antenna and a second antenna that are exposed to the outside of the reaction chamber and are adjacent to each other.
The first antenna and the second antenna are connected to each other to form a loop shape, and the second linear antenna is disposed at a constant interval between the first and second antennas. In the plasma generator including the third and fourth antennas,
A power supply unit electrically connected to one side of each of the first and second linear antennas;
A ferrite structure located on each of the antennas formed inside the reaction chamber and concentrating a field formed radially from the linear antenna toward a processing substrate disposed in the reaction chamber. Including the body,
The ferrite structure is formed in an arch type,
The ferrite structure is composed of a large number, and Teflon is interposed between each of the ferrite structures,
The plasma generating apparatus, wherein the plurality of ferrite structures are formed with different sizes or thicknesses.   The Teflon is composed of any one substance selected from PTFE (Polytetrafluoroethylene), PFA (Perfluoroalkoxy), FEP (Fluoroethylenepropylene) and PVDF (Polyvinylidene fluoride). Plasma generator.   The plasma generator according to claim 10, wherein the power supply unit is driven at a frequency in a range of 100 KHz to 30 MHz.   The plasma generator according to claim 12, wherein the other side of each of the linear antennas is grounded.   14. The plasma generating apparatus of claim 13, wherein power supply units connected to each of the linear antennas are controlled independently of each other so as to make the plasma density inside the reaction chamber uniform. .

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