JP4722017B2 - Manufacturing method of ceramic mounting board - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a mounting board made of ceramics and a mounting board made of ceramics, which can improve the connection strength of a bump and a connection lug without decreasing connection area. <P>SOLUTION: The mounting board made of ceramics 1A consists of a ceramic sheet 20, an interconnection 21, and a connection lug 2A. In order to form the connection lug 2A into U-shape, after embedding the bottom face portion 3 of the connection lug 2A in the ceramics sheet 20 before baking, the ceramic sheet 20 is baked. After baking, a side wall portion 4A is formed by plating so that the side wall portion 4A stands up from both sides of the width direction of the bottom face portion 3. By embedding the bottom face portion 3, the bottom face portion 3 of the connection lug 2A can be embedded like a conventional process. Moreover, since the connection lug 2A is U-shaped, the junction area of a bump 31 and the connection lug 2A increases to strengthen the connection strength. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

The present invention relates to a ceramic mounting substrate manufacturing how, in particular, LTCC (low temperature co-fired ceramics) which connection terminals are formed on a surface mounting substrate and manufacturing side of the ceramic mounting substrate can be suitably used in the production process about the law.

  Conventionally, as a mounting substrate for mounting a semiconductor element such as an IC or a chip component such as a resistor or a capacitor, HTCC (High Temperature Co-fired Ceramic: for example, an alumina substrate) or 900 is used. A ceramic mounting substrate using LTCC (Low Temperature Co-fired Ceramic) capable of low-temperature firing at about 0 ° C. is often used. When LTCC is used as a ceramic sheet, the conventional ceramic mounting substrate 101 is a ceramic sheet (also referred to as a green sheet) 20 obtained by mixing an alumina aggregate with a glass material, as shown in FIG. After forming as many as the number of layers, wiring 21 and connection terminals 102A and 102B having excellent conductivity such as Ag, Au, Cu, and Ag-Pd are embedded in the surface of each ceramic sheet 20 before firing by a printing method. It is formed by laminating and firing the sheet 20.

  Here, since the plurality of solder bumps 31 formed on the semiconductor element 30 are flip-chip connected to the connection terminals 102A and 102B of the ceramic mounting substrate 101, the connection terminals 102A and 102B are planar or as shown in FIG. 12 is formed in a fork shape having two or more branches (see Patent Document 1).

JP 2006-128606 A

  However, for the semiconductor element 30 mounted on the conventional ceramic mounting substrate 101, the unformed surface 30a of the solder bump 31 and the surface 20a of the ceramic sheet 20 in the semiconductor element 30 are firmly bonded using a resin adhesive. Therefore, the bonding portion between the semiconductor element 30 and the ceramic mounting substrate 101 is only the bonding portion between the bump 31 and the connection terminals 102A and 102B by solder. Therefore, as shown in FIG. 11, when the connection terminal 102 </ b> A is formed in a planar shape, the semiconductor element 30 is easily separated from the ceramic mounting substrate 101 when an external load is applied to the semiconductor element 30. There was a problem.

  In addition, as shown in FIG. 12, when the connection terminal 102B is formed in a fork shape having two or more branches, the bonding strength of the semiconductor element 30 is improved, but the electrical connection portion between the bump 31 and the connection terminal 102B is substantially reduced. It becomes only the inner surface of the connection terminal 102B. For this reason, there is a problem in that the connection area is reduced as compared with the planar connection terminal 102A as shown in FIG. 11, and the electrical resistance between the bump 31 and the connection terminal 102B is increased.

The present invention has been made in view of these points, a manufacturing how the ceramic mounting substrate can improve their connection strength without reducing the contact area between the bumps and the connecting terminal Its purpose is to do.

  In order to achieve the above-described object, a ceramic mounting substrate manufacturing method according to the present invention includes, as a first aspect, a ceramic sheet before firing at a bottom surface portion serving as a bottom surface of a connection terminal formed in a substantially U-shaped longitudinal section. A step of firing the ceramic sheet after being embedded in the surface of the substrate, a step of forming a seed film on the surface of the fired ceramic sheet, and a patterning of the resist film after forming a resist film on the surface of the seed film By doing so, the surface of the seed film located above the bottom surface portion, on which the side wall portion serving as the side wall of the substantially U-shaped connection terminal is formed is exposed to the outside, and other than the surface on which the side wall portion is formed A side wall is formed on the surface of the seed film by plating the surface of the seed film exposed to the outside after the formation of the patterned resist film and the step c of covering the surface of And d degree, to remove the resist film after formation of the side wall portions, is characterized by comprising a step e of removing the seed film exposed to the outside by removing the resist film. Here, the substantially U shape in the longitudinal section of the connection terminal is formed when the side wall portion has a taper in addition to the substantially accurate U shape in which the angle formed by the side wall portion and the bottom surface portion is 90 °. Includes closed or open U shapes with angles other than 90 °.

  According to the method for manufacturing a ceramic mounting substrate of the first aspect of the present invention, the longitudinal cross-sectional shape of the connection terminal to be connected to the bump is formed in a substantially U shape. Not only the side wall but also the bottom can be used. Thereby, the junction area and electrical connection area of a bump and a connection terminal can be expanded. Further, since the bottom surface portion of the connection terminal is embedded before the ceramic sheet is fired, the bottom surface portion can be embedded in the same manner as the step of embedding the wiring in the ceramic sheet. Therefore, the bottom surface portion can be formed more easily than forming the bottom surface portion of the connection terminal on the surface of the fired ceramic sheet.

  In the method for manufacturing a ceramic mounting substrate according to the second aspect of the present invention, in the method for manufacturing a ceramic mounting substrate according to the first aspect, in step c, the resist film is heated and contracted after patterning of the resist film. Then, a taper is formed on the side surface of the resist film so that the width of the resist film decreases in the height direction of the resist film, and in step d, the side wall portion is formed by plating along the taper of the resist film. It is characterized in that a side wall portion having an isosceles trapezoidal shape in which the upper base is longer than the lower base or a longitudinal section having a shape similar thereto is formed. Here, the shape similar to the isosceles trapezoidal shape is a figure having four corners regardless of whether or not the four sides which are originally straight lines are curved, with the inclination of the leg of the isosceles trapezoid being the same. The shape is similar to a leg trapezoid.

  According to the method for manufacturing a ceramic mounting substrate of the second aspect of the present invention, the longitudinal section of the side wall portion is formed in the above-mentioned isosceles trapezoid shape or a shape similar thereto, so that the height direction thereof is increased. A taper that increases the width can be formed on the side surface of the side wall. Therefore, even if an external load is applied to the semiconductor element, the solder inside the substantially U-shaped connection terminal is difficult to come out of the connection terminal, so that the bonding strength between the bump and the connection terminal can be improved.

  The method for manufacturing a ceramic mounting substrate according to the third aspect of the present invention is the method for manufacturing a ceramic mounting substrate according to the first or second aspect. In step d, the surface of the seed film is covered until the upper surface of the resist film is covered. A side wall portion having an umbrella portion on the upper side is formed by plating.

  According to the method for manufacturing a ceramic mounting substrate of the third aspect of the present invention, it is possible to make it difficult to remove the solder inside the substantially U-shaped connection terminal from the connection terminal by the umbrella portion of the side wall portion. Bonding strength with the connection terminal can be improved.

  According to a fourth aspect of the present invention, there is provided a method for manufacturing a ceramic mounting substrate, comprising firing a ceramic sheet after embedding a bottom surface portion of a connection terminal formed in a substantially U-shaped longitudinal section in the surface of the ceramic sheet before firing. Forming a seed film on the surface of the fired ceramic sheet; forming a sidewall layer serving as a sidewall portion on the surface of the seed film; and forming a resist film on the surface of the sidewall layer Then, by patterning the resist film, the step h of covering the surface of the side wall layer which is the upper surface of the side wall portion with the resist film, and the side wall exposed to the outside after forming the patterned resist film Etch the layer to remove the resist film after forming the side wall, and remove the resist film exposed to the outside after forming the side wall. It is characterized by comprising a that step j.

  According to the method for manufacturing a ceramic mounting substrate of the fourth aspect of the present invention, since the longitudinal section of the connection terminal is formed in a substantially U shape, not only the side wall of the connection terminal but also the connection between the bump and the connection terminal. The bottom part can also be used. Therefore, the bonding area between the bump and the connection terminal and the electrical connection area can be increased. Further, since the bottom surface portion is buried before firing the ceramic sheet, the bottom surface portion can be formed more easily than forming the bottom surface portion on the surface of the fired ceramic sheet.

The method for manufacturing a ceramic mounting substrate according to the fifth aspect of the present invention is the method for manufacturing a ceramic mounting substrate according to the fourth aspect. In step g, the first metal layer and the second metal layer are formed on the surface of the seed film in step g. A side wall layer is formed by sequentially plating the metal layer. In step i, a second metal layer etching solution is used that etches the second metal layer but does not etch the first metal layer. After the isotropic etching of only the second metal layer that is the surface layer of the sidewall layer, the first metal layer etching solution that etches the first metal layer but does not etch the second metal layer and the seed film is used. The umbrella portion is formed above the side wall portion by isotropically etching only the first metal layer.

  According to the method for manufacturing a ceramic mounting substrate of the fifth aspect of the present invention, the umbrella portion is formed above the side wall portion of the connection terminal having a substantially U-shaped longitudinal section. It is possible to make it difficult to remove the solder inside the connection terminal from the connection terminal. Thereby, the joint strength between the bump and the connection terminal can be improved.

  The method for manufacturing a ceramic mounting substrate according to the sixth aspect of the present invention is the method for manufacturing a ceramic mounting substrate according to any one of the first to fifth aspects, wherein the bottom portion is a wiring embedded in the ceramic sheet. It is characterized by being formed using Ag, Au, Cu, or Ag—Pd, which is the same material.

  According to the method for manufacturing a ceramic mounting substrate of the sixth aspect of the present invention, by making the bottom surface portion and the wiring material the same, the step of embedding the bottom surface portion in the surface of the ceramic sheet and the step of embedding the wiring inside thereof Can be performed in the same process without separation. Thereby, shortening and simplification of the manufacturing process concerning the ceramic mounting substrate can be achieved.

  In the method for manufacturing a ceramic mounting substrate according to the seventh aspect of the present invention, in the method for manufacturing a ceramic mounting substrate according to any one of the first to sixth aspects, in step b, before forming the seed film, The replacement metal layer that becomes the surface layer of the bottom surface portion is formed on the surface of the bottom surface portion by plating Ni, Ni-P, or other substitution metal mainly composed of Ni on the surface of the bottom surface portion. In the subsequent process of j, the surface of the bottom surface portion is subjected to electroless Au plating, whereby Ni on the surface of the bottom surface portion is replaced with Au to form a bonding film on the surface of the bottom surface portion.

  According to the method for manufacturing a ceramic mounting substrate of the seventh aspect of the present invention, the bonding film formed by Au plating has good adhesion to Sn, which is the main component of the solder. The joining force can be increased.

  The method for manufacturing a ceramic mounting substrate according to the eighth aspect of the present invention is the method for manufacturing a ceramic mounting substrate according to any one of the first to seventh aspects, wherein the surface of the seed film is used in step d or step g. After plating Cu or an alloy containing Cu as a main component or other base metal to form a side wall body, a side wall layer or a first metal layer, Ni, Ni-P or other Ni as a main component is formed. The side wall portion is formed by plating the replacement metal on the surface of the side wall portion body or the surface of the side wall layer, or by plating the surface of the first metal layer so as to become the second metal layer. In the step after step e or step j, the surface of the side wall or the surface of the second metal layer is subjected to electroless Au plating, so that the Ni on the surface of the side wall or the surface of the second metal layer is Ni. To Au And conversion, is characterized by forming the bonding film on the surface of the side wall portion.

  According to the method for manufacturing a ceramic mounting substrate of the eighth aspect of the present invention, the bonding film formed by Au plating has good adhesion to Sn, which is the main component of the solder. The joining force can be increased.

  The method for manufacturing a ceramic mounting substrate according to the ninth aspect of the present invention is the method for manufacturing a ceramic mounting substrate according to any one of the first to eighth aspects, wherein the seed film has Ti or Cr as a lower layer, Cu It is characterized by having a laminated structure with the upper layer as the upper layer.

  According to the method for manufacturing a ceramic mounting substrate of the ninth aspect of the present invention, Ti or Cr serving as a lower layer of the seed film has good adhesion to Ag, Au, Cu, or Ag—Pd used for the bottom surface, and Since Cu as the upper layer is a material suitable as a base material for plating, the adhesion between the bottom surface portion and the side wall portion of the connection terminal can be improved.

  The method for manufacturing a ceramic mounting substrate according to the tenth aspect of the present invention is the method for manufacturing a ceramic mounting substrate according to any one of the first to ninth aspects, wherein the connection terminal has a cylindrical shape from the bottom surface to the side wall. It is characterized by having a bottomed square hole or a bottomed round hole.

  According to the method for manufacturing a ceramic mounting substrate of the tenth aspect of the present invention, the side surface of the bump to be bonded is surrounded by the side wall portion of the connection terminal, so the bonding area and the electrical connection area between the bump and the connection terminal Can be enlarged. Accordingly, the bonding strength between the bump and the connection terminal can be improved, and the electrical resistance between the bump and the connection terminal can be reduced.

  According to the method for manufacturing a ceramic mounting substrate of the present invention, the bottom surface portion of the connection terminal having a substantially U-shaped longitudinal section is embedded in the surface of the ceramic sheet before firing in the same manner as the wiring embedded in the inner layer. There is an effect that it is possible to manufacture a ceramic mounting substrate having connection terminals excellent in bonding strength and electrical connection, with almost no change in the manufacturing process, work contents, and work time of the board.

  Hereinafter, the ceramic mounting substrate and the manufacturing method thereof according to the present invention will be described with reference to FIGS. 1 to 7 according to the first to third embodiments.

  First, the ceramic mounting substrate 1A according to the first embodiment will be described with reference to FIGS. FIG. 1 shows a plan view of a state in which a semiconductor element 30 is mounted on a ceramic mounting substrate 1A of the first embodiment, and FIG. 2 shows a cross-sectional view taken along arrow 2-2 of FIG. In addition, as for the plurality of ceramic sheets 20 related to the ceramic mounting substrate 1A of the first embodiment shown in FIG. 2, only the surface layer ceramic sheet 20A on which the connection terminals 2A are formed and the ceramic sheet 20B below it. Is shown.

  As shown in FIGS. 1 and 2, the ceramic mounting substrate 1 </ b> A according to the first embodiment includes a ceramic sheet 20, wirings 21, and connection terminals 2 </ b> A.

  The ceramic sheet 20 of the first embodiment is made into a slurry by mixing a raw material powder obtained by mixing glass powder and ceramic powder with an organic binder and a solvent, and having a uniform thickness on a PET film. It is LTCC which apply | coated and dried and baked after that. In the ceramic mounting substrate 1A, as shown in FIG. 2, before the ceramic sheet 20 is fired, a good conductive metal of Ag, Au, Cu, or Ag—Pd is printed on the surface of the ceramic sheet 20 to make the ceramic. Wiring 21 is embedded in the inner layer of the ceramic mounting substrate 1A by embedding the wiring 21 on the surface of the sheet 20 and then laminating the ceramic sheet 20 together with other ceramic sheets 20.

  As shown in FIG. 1 and FIG. 2, the connection terminal 2A has a substantially U-shaped vertical section (in the first embodiment) by a flat bottom surface portion 3 and side wall portions 4A erected from both sides in the width direction. Since the side wall portion 4A has a taper 4Aa at least on the inner side surface thereof, the inner side of both side wall portions 4A is formed in a closed U shape that is recessed toward the tip. The connection terminal 2A is exposed on the surface of the ceramic mounting substrate 1A by embedding all or part of the bottom surface portion 3 on the surface of the ceramic sheet 20A corresponding to the surface layer of the plurality of laminated ceramic sheets 20. A plurality of them are arranged.

  Further, the side wall portion 4A of the connection terminal 2A of the first embodiment has a taper 4Aa that increases in width in the height direction. By forming the taper 4Aa on both side surfaces of the side wall 4A, the vertical cross section of the side wall 4A has a shape similar to an isosceles trapezoid whose upper base is longer than the lower base (the side wall 4A of the first embodiment). In FIG. 2, the upper and lower bases of the isosceles trapezoid are convexly curved.

  Further, a replacement metal layer 5 such as Ni or Ni-P is formed as a surface layer of the bottom surface portion 3 and a surface layer of the side wall portion 4A on the surface of the bottom surface portion 3 and the surface of the side wall portion 4A of the connection terminal 2A. Yes. Then, the Au bonding film 6 is formed on the surface of the bottom surface portion 3 and the surface of the side wall portion 4A by replacing Ni on the surface of the bottom surface portion 3 and Ni on the surface of the side wall portion 4A with Au.

  Next, a manufacturing method of the ceramic mounting substrate 1A according to the first embodiment will be described with reference to FIG. Here, FIG. 3 shows the manufacturing process of the ceramic mounting substrate 1A of the first embodiment as viewed from the direction of the arrow 2-2 in FIG. The ceramic mounting substrate 1A of the first embodiment is manufactured mainly through steps a to e.

  In step a, as shown in FIG. 3A, the bottom surface portion 3 which is the bottom surface of the connection terminal 2A formed in a substantially U-shaped longitudinal section is printed on the surface of the ceramic sheet 20 before firing, and WIP (Warm Isostatic Press: The bottom surface portion 3 is embedded in the surface of the ceramic sheet 20 before firing by embedding by isostatic pressing with warm water. The bottom surface portion 3 is preferably formed using Ag, Au, Cu, or Ag—Pd, which is the same material as the wiring 21 embedded in the ceramic sheet 20. Further, this step a is a step having the same contents as the step of embedding the wiring 21 in the ceramic sheet 20 before firing.

  In step b, as shown in FIG. 3B, the surface of the bottom surface portion 3 is electroplated or electrolessly plated with Ni-P as a replacement metal, whereby the replacement metal layer 5 that becomes the surface layer of the bottom surface portion 3 is formed. It is formed on the surface of the bottom part 3. Here, the replacement metal may be Ni-P or Ni that can replace Au or a metal containing Ni as a main component. The replacement metal layer 5 is necessary for forming the Au bonding film 6, but the bonding film 6 is not necessarily required for forming the connection terminal 2A. Therefore, when the bonding film 6 is not formed, the replacement metal layer 5 may not be formed on the surface of the bottom surface portion 3.

  Then, as shown in FIG. 3C, after the formation of the replacement metal layer 5 (after the firing of the ceramic sheet 20 if the replacement metal layer 5 is not formed), the surface of the ceramic sheet 20 having the bottom surface portion 3 on the surface. A seed film 7 is formed. Although not shown, the seed film 7 has a laminated structure in which Ti or Cr is a lower layer and Cu is an upper layer, and is formed by sputtering.

  In step c, as shown in FIG. 3D, a resist film 8 is formed on the surface of the seed film 7. Then, as shown in FIG. 3E, by patterning the resist film 8, the side wall portion 4A which is the surface of the seed film 7 located above the bottom surface portion 3 and serves as the side wall of the substantially U-shaped connection terminal 2A is formed. The surface 7a to be formed is exposed to the outside and the surface other than the surface 7a on which the side wall portion 4A is formed is covered. When the taper 4Aa is not formed on the side wall 4A, the process proceeds to step d. However, in the first embodiment, the taper 4Aa is formed on the side wall 4A. Therefore, as shown in FIG. A taper 8 a is formed on the side surface of the resist film 8 such that the width of the resist film 8 decreases in the height direction of the resist film 8 by heat shrinking the film 8.

  In step d, as shown in FIG. 3G, the surface 7a of the seed film 7 exposed to the outside after the formation of the patterned resist film 8 is electroplated to form a sidewall portion on the surface 7a of the seed film 7. 4A is formed. The side wall 4A has a vertical cross section similar to an isosceles trapezoid whose upper base is longer than the lower base by plating the side wall 4A along the taper 8a of the resist film 8. In the side wall portion 4A of the first embodiment, as shown in FIG. 3G, the surface 7a of the seed film 7 is electroplated with Cu or an alloy containing Cu as a main component or other underlying metal to form a side wall portion main body 9A. Form first. Thereafter, the replacement metal layer 5 is formed on the surface of the side wall portion main body 9A by electroplating or electroless plating with a replacement metal mainly composed of Ni, Ni-P, or Ni.

  In step e, as shown in FIG. 3H, the resist film 8 is removed by a resist remover after the formation of the side wall portion 4A. Then, as shown in FIG. 3I, the seed film 7 exposed to the outside by removing the resist film 8 is removed by ion milling. The seed film 7 is removed by using a sulfuric acid-based etching solution containing ferric sulfate, a hydrochloric acid-based etching solution containing ferric chloride, or other Cu etching solution instead of ion milling, You may carry out using the overwater type etching liquid containing potassium oxide or sodium hydroxide, other Ti etching liquid, or Cr etching liquid.

  And in the manufacturing method of 1 A of ceramic mounting boards of 1st Embodiment, the process f used as the process after the process e is provided as an optional process. In this step f, as shown in FIG. 3I, the surface of the bottom surface portion 3 and the surface of the side wall portion 4A are subjected to electroless Au plating, whereby Ni on the surface of the bottom surface portion 3 and Ni on the surface of the side wall portion 4A are Au The bonding film 6 is formed on the surface of the bottom surface portion 3 and the surface of the side wall portion 4A. When the bonding film 6 is required, the manufacturing process of the ceramic mounting substrate 1A is completed by the end of the step f. When the bonding film 6 is not required, the manufacturing process of the ceramic mounting substrate 1A is completed by the end of the step e. All ends.

  Next, the operation of the ceramic mounting substrate 1A of the first embodiment and the manufacturing method thereof will be described with reference to FIGS.

  As shown in FIGS. 1 and 2, the ceramic mounting substrate 1 </ b> A of the first embodiment has a bottom surface portion 3 embedded in the surface of the ceramic sheet 20, and side wall portions from both sides in the width direction of the bottom surface portion 3. 4A stands up. For this reason, since the longitudinal section of the connection terminal 2A is substantially U-shaped, bumps (in the first embodiment, the solder bumps 31 are formed, so that the projection shape becomes the internal shape of the connection terminal 2A having a substantially U-shape by bonding. And the connection area and the electrical connection area of the connection terminal 2A can be increased. As a result, the bonding strength between the solder bump 31 and the connection terminal 2A can be improved and the electrical resistance between the solder bump 31 and the connection terminal 2A can be lowered as compared with the conventional ceramic mounting substrate 101. it can.

  Further, in the side wall portion 4A of the first embodiment, the taper 4Aa is formed so that the width thereof increases in the height direction. Therefore, the inner side surface of the connection terminal 2A has a longitudinal section. It becomes a substantially closed U shape like a sag, and its entrance narrows. This makes it difficult for the solder bumps 31 bonded to the connection terminals 2A to come off, so that even if an external load is applied to the semiconductor element 30, it is possible to prevent the solder bumps 31 from being peeled off from the connection terminals 2A. .

  Further, a replacement metal layer 5 is formed as a surface layer on the surface of the bottom surface portion 3 and the surface of the side wall portion 4A of the connection terminal 2A, and Ni on the surface of the bottom surface portion 3 and Ni on the surface of the side wall portion 4A. Is replaced with Au, so that the bonding film 6 is formed on the surface of the bottom surface portion 3 and the surface of the side wall portion 4A. Therefore, the adhesion between the connection terminal 2A and the solder bump 31 is improved, so that the bonding strength between the solder bump 31 and the connection terminal 2A can be improved as compared with the case where the bonding film 6 is not formed.

  In order to manufacture this ceramic mounting substrate 1A, in step a of the first embodiment, as shown in FIG. 3A, the bottom surface portion 3 of the connection terminal 2A is embedded in the surface of the ceramic sheet 20 before firing, and then the ceramic is mounted. The sheet 20 is fired. Here, although the bottom face part 3 and the wiring 21 embedded in the ceramic sheet 20 are different in name and shape, they are the same from the viewpoint of a metal embedded in the ceramic sheet 20 before firing by printing and WIP. That is, since the bottom surface portion 3 can be embedded in the same manner as the step of embedding the wiring 21 in the ceramic sheet 20, it is easier than forming the bottom surface portion 3 of the connection terminal 2A on the surface of the fired ceramic sheet 20 by sputtering. The bottom surface portion 3 can be formed.

  In step a, the bottom surface portion 3 is formed using Ag, Au, Cu, or Ag—Pd, which is the same material as the wiring 21 embedded in the ceramic sheet 20. Therefore, the process of embedding the bottom surface portion 3 on the surface of the ceramic sheet 20 and the process of embedding the wiring 21 inside thereof can be performed in the same process without being separated, so that the manufacturing process related to the ceramic mounting substrate 1A can be shortened. And simplification.

  Further, in step b of the first embodiment, as shown in FIGS. 3B and 3C, the replacement metal layer 5 is electroplated on the surface of the bottom surface portion 3 before the seed film 7 is formed. Further, in step f, which is a step after the step of removing seed film 7, as shown in FIGS. A bonding film 6 is formed via the layer 5. Since the Au bonding film 6 has good adhesion to Sn, which is the main component of the solder, the bonding force between the bottom surface portion 3 of the connection terminal 2A and the solder (solder bump 31) can be increased.

  As shown in FIG. 3G, the seed film 7 plays an important role for electroplating the side wall portion 4A on the bottom surface portion 3 in step d. Although not shown, the seed film 7 has a laminated structure in which Ti or Cr is a lower layer and Cu is an upper layer. Ti or Cr serving as the lower layer has good adhesion with Ag, Au, Cu, or Ag—Pd used for the bottom surface portion 3. Moreover, Cu as the upper layer is a material suitable as a base material for plating. Therefore, by forming the seed film 7, the adhesion between the bottom surface portion 3 of the connection terminal 2A and the side wall portion 4A can be enhanced.

  In step c, which is a step of forming the resist film 8 necessary for forming the side wall portion 4A, the resist film 8 is heated and contracted after the patterning of the resist film 8 as shown in FIG. 3F. When the resist film 8 is heated and shrunk, a taper 8 a is formed on the side surface of the resist film 8 such that the width of the resist film 8 decreases in the height direction of the resist film 8. Therefore, as shown in FIG. 3G, the side wall 4A is formed by plating along the taper 8a of the resist film 8 in step d, so that the vertical cross section of the side wall 4A becomes an isosceles trapezoid whose upper base is longer than the lower base. It can be formed in a similar shape. With such a longitudinal cross-sectional shape, as shown in FIG. 2, the taper 4Aa that increases the width in the height direction is formed on both side surfaces of the side wall portion 4A. Even if a load is applied, the deformed solder (melted and deformed solder bump 31 in the first embodiment) inside the substantially U-shaped connection terminal 2A is difficult to be removed from the connection terminal 2A. ) And the connection terminal 2A can be improved.

  Further, in step d, as shown in FIG. 3G, after the surface of the seed film 7 is electroplated with Cu or an alloy containing Cu as a main component or other base metal to form the side wall 9A, Ni The side wall portion 4A is formed by electroplating or electroless plating the surface of the side wall portion main body 9A with Ni-P or other Ni-based replacement metal layer 5 as a main component. As shown in FIG. 3I, in step f performed after the step of removing seed film 7 (step e), the surface of side wall portion 4A is plated with electroless Au so that Ni on the surface of side wall portion 4A is reduced. Substituting with Au, the bonding film 6 is formed on the surface of the side wall portion 4A. Similar to the bonding film 6 formed on the bottom surface portion 3, the Au bonding film 6 formed on the side wall portion 4A has good adhesion to Sn, which is the main component of the solder, so the side wall portion 4A of the connection terminal 2A and the solder The joining force can be increased.

  Next, the ceramic mounting board 1B of the second embodiment and the manufacturing method thereof will be described with reference to FIGS. Here, FIG. 4 shows a cross-sectional view of the ceramic mounting substrate 1B of the second embodiment viewed from the same direction as the direction of the arrow 2-2 in FIG. Moreover, FIG. 5 has shown the manufacturing process of ceramic mounting substrate 1B of 2nd Embodiment in order of AH seen from the same direction as the 2-2 arrow direction of FIG. In addition, about the several ceramic sheet 20 which concerns on the ceramic mounting board | substrate 1B of 2nd Embodiment shown in FIG. 4, only the ceramic sheet 20A of the surface layer in which the connection terminal 2B is formed, and the ceramic sheet 20B of the lower layer are formed. Is shown.

  As shown in FIG. 4, the ceramic mounting board 1B of the second embodiment includes a ceramic sheet 20, wirings 21, and connection terminals 2B. The difference between the first embodiment and the second embodiment is the shape of the side wall portion 4B of the connection terminal 2B, and there is no difference between the other bottom surface portion 3, the ceramic sheet 20, and the wiring 21. Therefore, the side wall portion 4B of the connection terminal 2B and the formation process thereof will be mainly described.

  As shown in FIG. 4, the side wall portion 4B of the connection terminal 2B has an umbrella portion 10B that extends in the width direction above the mushroom like a vertical cross-sectional shape. The side wall portion 4B of the second embodiment has a vertical cross-sectional shape in which an umbrella portion 10B is formed at the upper end of the side wall portion main body 9B having no taper. However, although not shown, tapers (see the first embodiment) that increase the width in the height direction may be formed on both side surfaces of the side wall portion main body 9B.

  As shown in FIGS. 5A to 5H, the ceramic mounting board 1B of the second embodiment is formed mainly through the process a to the process e. A series of flow from step a to step e is the same as that in the first embodiment, but there is a difference from the first embodiment in steps c and d.

  In step a, as shown in FIG. 5A, the ceramic sheet 20 is fired after the bottom surface portion 3 of the connection terminal 2B is embedded in the surface of the ceramic sheet 20 before firing. In step b, as shown in FIG. 5B, after firing the ceramic sheet 20, the replacement metal layer 5 is formed on the surface of the bottom surface portion 3, and as shown in FIG. 5C, the ceramic is formed after the formation of the replacement metal layer 5. A seed film 7 is formed on the surface of the sheet 20.

  In step c, a resist film 8 is formed on the surface of the seed film 7 as shown in FIG. 5D, and then the resist film 8 is patterned as shown in FIG. A surface 7a on the surface of the seed film 7 that is positioned and on which the side wall portion 4B that becomes the side wall of the substantially U-shaped connection terminal 2B is exposed to the outside, and a surface other than the surface 7a on which the side wall portion 4B is formed is exposed. Cover. In the second embodiment, since no taper is formed on at least the inner side surface of the side wall portion 4B, the resist film 8 is not heated and shrunk. However, as described above, similarly to the first embodiment, the resist film 8 may be heated and shrunk to form a taper on the side surface of the resist film 8 (see FIG. 3F).

  In step d, as shown in FIG. 5F, the surface 7a of the seed film 7 exposed to the outside after the formation of the patterned resist film 8 is electroplated, whereby the sidewall 4B is formed on the surface of the seed film 7. Form. For electroplating at that time, the surface of the seed film 7 is plated until the side wall 4B partially covers the upper surface of the resist film 8 as shown in FIG. 5F. Thereby, the side wall part 4B which has the umbrella part 10B above is formed. In addition, when the taper is formed in the side surface of the resist film 8 in the process c, the side wall part 4B having the taper (see FIG. 3G) and the umbrella part 10B is formed in the process d.

  As in the first embodiment, the side wall 4B is formed by forming a side wall 9B by electroplating the surface of the seed film 7 with Cu or an alloy containing Cu as a main component or other base metal to form a side wall 9B. In addition, Ni-P or other substitutional metal layer 5 containing Ni as a main component is formed by electroplating or electroless plating on the surface of the side wall 9B. Here, although not shown, the umbrella portion 10B of the side wall portion 4B may have a two-layer structure of the metal layer related to the side wall portion main body 9B and the replacement metal layer 5, or for replacement as shown in FIG. 5F. A single layer structure having only the metal layer 5 may be used.

  In step e, as in the first embodiment, as shown in FIG. 5G, the resist film 8 is removed after the formation of the side wall 4B, and as shown in FIG. 5H, the resist film 8 is removed and exposed to the outside. The seed film 7 is removed. Thereafter, in step f, which is an optional step, as shown in FIG. 5H, Ni in the replacement metal layer 5 on the bottom surface portion 3 and Ni in the replacement metal layer 5 on the side wall portion 4B are replaced with Au. The bonding film 6 is formed on the surface of the part 3 and the surface of the side wall part 4B.

  Next, the operation of the ceramic mounting substrate 1B of the second embodiment and the manufacturing method thereof will be described with reference to FIGS. In addition, since the effect | action which concerns on 2nd Embodiment also has a common point with the effect | action which concerns on 1st Embodiment, only a different point from the effect | action concerning 1st Embodiment is demonstrated.

  As shown in FIG. 4, the side wall portion 4 </ b> B according to the ceramic mounting substrate 1 </ b> B of the second embodiment has an umbrella portion 10 </ b> B that extends in the width direction above the side wall portion 4 </ b> B. By having the umbrella portion 10B, the entrances of the connection terminals 2B on both sides forming a substantially U-shaped longitudinal section are narrowed, so that the solder bumps 31 joined to the connection terminals 2B are caught by the umbrella portion 10B and are difficult to come off. . Therefore, even when an external load is applied to the semiconductor element 30, it is possible to prevent the solder bump 31 from being peeled off from the connection terminal 2B.

  Further, in step d according to the method for manufacturing the ceramic mounting substrate 1B of the second embodiment, as shown in FIG. 5F, the surface of the seed film 7 is plated until the upper surface of the resist film 8 is covered, thereby An umbrella portion 10B is formed above the portion 4B. As shown in FIG. 4, the umbrella portion 10B of the side wall portion 4B removes the solder (solder bump 31 melted and deformed in the second embodiment) inside the connection terminal 2B from the connection terminal 2B. Can be difficult.

  Next, a ceramic mounting board 1C of the third embodiment and a method for manufacturing the same will be described with reference to FIGS. Here, FIG. 6 shows a cross-sectional view of the ceramic mounting substrate 1C of the third embodiment viewed from the same direction as the direction of the arrow 2-2 in FIG. Moreover, FIG. 7 has shown the manufacturing process of 1 C of ceramic mounting substrates of 3rd Embodiment in order of AJ seen from the same direction as the 2-2 arrow direction of FIG. In addition, as for the plurality of ceramic sheets 20 related to the ceramic mounting substrate 1C of the third embodiment shown in FIG. 6, only the surface layer ceramic sheet 20A on which the connection terminals 2C are formed and the ceramic sheet 20B below it. Is shown.

  As shown in FIG. 6, the ceramic mounting substrate 1 </ b> C of the third embodiment includes a ceramic sheet 20, wirings 21, and connection terminals 2 </ b> C. Moreover, the umbrella part 10C is formed in the side wall part 4C of the connection terminal 2C. These ceramic sheet 20, wiring 21 and connection terminal 2C are the same as those in the second embodiment. That is, the difference between the second embodiment and the third embodiment is in the manufacturing process, and the difference in the manufacturing process causes a slight difference in the appearance of the side wall portion 4C of the connection terminal 2C. There is no difference in the functional shape. Therefore, the manufacturing method of the ceramic mounting substrate 1C will be described mainly.

  As shown in FIGS. 7A to 7J, the ceramic mounting substrate 1C of the third embodiment is formed mainly through the process a, the process b, and the process g to the process j. The steps a and b are the same as those in the second embodiment, but the steps g to j are different from those in the second embodiment.

  In step a, as shown in FIG. 7A, the bottom surface 3 of the connection terminal 2C is embedded in the surface of the ceramic sheet 20 before firing, and then the ceramic sheet 20 is fired. In step b, as shown in FIG. 7B, the replacement metal layer 5 is formed on the surface of the bottom surface portion 3 after firing the ceramic sheet 20. As in the second embodiment, the replacement metal layer 5 is formed of Ni—P, Ni, or other Ni as a main component. Then, as shown in FIG. 7C, a seed film 7 is formed on the surface of the ceramic sheet 20 after the replacement metal layer 5 is formed. Similar to the second embodiment, the seed film 7 has a laminated structure in which Ti or Cr is a lower layer and Cu is an upper layer.

  In step g, as shown in FIG. 7D, a sidewall layer 11 to be the sidewall portion 4C is formed on the surface of the seed film 7. At this time, unlike the step c of the second embodiment, the resist film 8 is not formed on the surface of the seed film 7 (see FIG. 5D). Here, the side wall layer 11 is formed by laminating the first metal layer 12 on the surface of the seed film 7 and plating the second metal layer 13 on the surface of the first metal layer 12. . The first metal layer 12 is formed by electroplating Cu or an alloy containing Cu as a main component on the surface of the seed film 7, and is the same material as that of the side wall portion main body 9B of the second embodiment. It is formed using. As an alternative metal for Cu or an alloy containing Cu as a main component, a metal suitable as a base for plating may be used. The second metal layer 13 is formed by electroplating or electrolessly plating the surface of the first metal layer 12 with a replacement metal mainly composed of Ni, Ni-P, or Ni. The same material as that of the replacement metal layer 5 of the second embodiment is used.

  In step h, as shown in FIG. 7E, a resist film 8 is formed on the surface of the sidewall layer 11. Then, as shown in FIG. 7F, by patterning the resist film 8, a surface 11a which is the surface of the side wall layer 11 and is the upper surface of the side wall portion 4C (see FIGS. 1 and 6) is formed. Cover with.

  In step i, as shown in FIGS. 7G and 7H, after the patterned resist film 8 is formed, the sidewall layer 11 exposed to the outside is etched to form the sidewall portion 4C. Unlike the third embodiment, the etching of the sidewall layer 11 is performed using an etching solution that simultaneously etches both the second metal layer 13 and the first metal layer 12 forming the sidewall layer 11. Also good. However, in step i of the third embodiment, by etching each layer individually using an etchant that etches either the first metal layer 12 or the second metal layer 13, etc. An umbrella portion 10C as shown in FIG. 7H is formed above the side wall portion 4C by utilizing the property of isotropic etching.

  That is, in step i of the third embodiment, first, as shown in FIG. 7G, a second metal layer etchant that etches the second metal layer 13 but does not etch the first metal layer 12 is used. Only the second metal layer 13 which is the surface layer of the sidewall layer 11 is isotropically etched. As a result, the second metal layer 13 is etched such that the width of the lower portion of the resist film 8 that is easily etched is narrower than the width of the resist film 8, and the first metal layer 12 that is difficult to etch is etched. Etching is performed such that the width of the upper portion of the resist film is wider than that of the lower portion of the resist film 8. Therefore, the second metal layer 13 is etched so as to become the umbrella portion 10C. Here, since the second metal layer 13 is Ni, Ni-P, or other substitutional metal containing Ni as a main component, the second metal layer etching solution is sulfuric acid containing sulfuric acid and hydrochloric acid. An etching solution, a Ni etching solution such as a hydrochloric acid-based etching solution containing ferric chloride, a Ni-P etching solution, or an etching solution for a replacement metal containing Ni as a main component is used.

  Further, after the etching of the second metal layer 13 is completed, the first metal layer etchant that etches the first metal layer 12 but does not etch the second metal layer 13 and the seed film 7 is used. Only the first metal layer 12 is isotropically etched. As a result, the first metal layer 12 is etched such that the width of the lower portion of the second metal layer 13 that is easily etched is narrower than the width of the second metal layer 13 that forms the umbrella portion 10C. At the same time, etching is performed such that the width of the upper portion of the seed film 7 is wider than that of the lower portion of the second metal layer 13 that becomes the umbrella portion 10C. Therefore, the first metal layer 12 is etched so as to become the side wall portion main body 9C that supports the second metal layer 13 that becomes the umbrella portion 10C. Here, since the first metal layer 12 is Cu or an alloy containing Cu as a main component, the first metal layer etching solution includes a sulfuric acid-based etching solution containing ferric sulfate, a second chloride. A hydrochloric acid-based etching solution containing iron, an ammonium persulfate-based etching solution, a cupric chloride-based etching solution, and other Cu etching solutions are used.

  In step j, as shown in FIG. 7I, the resist film 8 is removed after the formation of the side wall portion 4C. Then, after the resist film 8 is removed, as shown in FIG. 7J, the seed film 7 exposed to the outside is removed after the side wall portion 4C is formed, that is, after the first metal layer 12 is etched. The removal of the resist film 8 and the removal of the seed film 7 are performed in the same manner as the method performed in step e of the second embodiment.

  As in the second embodiment, in the method for manufacturing the ceramic mounting substrate 1C of the third embodiment, the process k (the same process as the process f), which is a process subsequent to the process j, is performed as an optional process. I have. In this step k, the surface of the bottom surface portion 3 is subjected to electroless Au plating on the surface of the bottom surface portion 3 and the surface of the side wall portion 4C (that is, the surface of the second metal layer 13) as shown in FIG. Then, Ni on the surface of the side wall portion 4C is replaced with Au, and the bonding film 6 is formed on the surface of the bottom surface portion 3 and the surface of the side wall portion 4C. As in the second embodiment, when the bonding film 6 is required, the manufacturing process of the ceramic mounting substrate 1C is completed by the completion of the process k, and when the bonding film 6 is not required, the ceramic is obtained by the completion of the process j. All the manufacturing steps of the manufactured mounting substrate 1C are completed.

  Next, the operation of the ceramic mounting substrate 1C of the third embodiment and the manufacturing method thereof will be described with reference to FIGS. Note that the action related to the ceramic mounting substrate 1C of the third embodiment is common to the action related to the ceramic mounting board 1B of the second embodiment. Further, the operation related to the method for manufacturing the ceramic mounting substrate 1C of the third embodiment has the same point as the operation related to the method for manufacturing the ceramic mounting substrate 1B of the second embodiment. Therefore, only the differences between the ceramic mounting substrate 1C of the third embodiment and the method for manufacturing the ceramic mounting substrate 1B of the second embodiment and the manufacturing method thereof will be described in detail.

  As shown in FIG. 6, the ceramic mounting substrate 1 </ b> C of the third embodiment includes a ceramic sheet 20, wirings 21, and connection terminals 2 </ b> C. Similar to the second embodiment, since the longitudinal section of the connection terminal 2C is formed in a substantially U shape, not only the side wall portion 4C of the connection terminal 2C but also its bottom surface portion 3 at the joint of the solder bump 31 and the connection terminal 2C. Can also be used. Therefore, the bonding area and the electrical connection area between the solder bump 31 and the connection terminal 2C can be increased.

  Further, as shown in FIG. 7A, the bottom surface portion 3 is embedded before the ceramic sheet 20 is fired in the step a. Therefore, the bottom surface portion 3 can be formed more easily than forming the bottom surface portion 3 on the surface of the fired ceramic sheet 20.

  Further, as shown in FIG. 6, the side wall portion 4 </ b> C has an umbrella portion 10 </ b> C that extends in the width direction above the side wall portion 4 </ b> C. In step d of the second embodiment, as shown in FIG. 5F, the umbrella portion 10 </ b> B is formed on the side wall portion 4 </ b> B by making the height of plating higher than the height of the resist film 8. However, in step i of the third embodiment, as shown in FIGS. 7G and 7H, the laminated structure of the side wall portion 4C by the first metal layer 12 and the second metal layer 13 and isotropic by different etching liquids. The umbrella portion 10C is formed on the side wall portion 4C using reactive etching. By forming the umbrella portion 10C, as shown in FIG. 6, the entrance of the connection terminal 2C having a substantially U-shaped longitudinal section is narrowed, so that the solder bump 31 bonded to the connection terminal 2C is difficult to come off. Therefore, even when an external load is applied to the semiconductor element 30, it is possible to prevent the solder bump 31 from being peeled off from the connection terminal 2C.

  Here, in these bottom surface portions 3, Ni, Ni—P, and other substitutional metal layers 5 mainly composed of Ni are formed as a surface layer of the bottom surface portion 3 through the process b shown in FIG. 7B. . In addition, in the side wall portion 4C, the second metal layer 13 serving as the above-described replacement metal layer 5 is formed through the process g shown in FIG. 7D. In step k shown in FIG. 7J, Ni in the replacement metal layer 5 and Ni in the second metal layer 13 are replaced with Au, so that the Au bonding film is formed on the surface of the bottom surface portion 3 and the surface of the side wall portion 4C. 6 is formed. As shown in FIG. 6, the Au bonding film 6 has good adhesion to Sn as a main component of solder (solder bump 31 in the third embodiment), as in the second embodiment. The joining force between the bottom surface portion 3 and the side wall portion 4C of 2C and the solder can be increased.

  That is, according to the ceramic mounting boards 1A to 1C of the first to third embodiments, since the longitudinal cross sections of the connection terminals 2A to 2C to be joined to the solder bump 31 are substantially U-shaped, Increase the electrical connection area. Therefore, compared with the conventional ceramic mounting substrate 101, the connection strength between the solder bump 31 and the connection terminals 2A to 2C can be improved without reducing the connection area.

  Moreover, according to the manufacturing method of the ceramic mounting substrates 1A to 1C according to the first to third embodiments, the bottom surface portion 3 of the connection terminals 2A to 2C having a substantially U-shaped longitudinal section is similar to the wiring 21 embedded in the inner layer. Since it is embedded in the surface of the ceramic sheet 20 before firing, the connection terminals 2A to 2C are excellent in bonding strength and electrical connection without substantially changing the manufacturing process, work contents, and work time of the ceramic mounting boards 1A to 1C. The ceramic mounting boards 1A to 1C having the above can be manufactured.

  In addition, this invention is not limited to embodiment mentioned above etc., A various change is possible as needed.

  For example, in the ceramic mounting substrate 1C of the third embodiment, since the umbrella portion 10C is formed on the sidewall portion 4C, the sidewall layer 11 has a two-layer structure in step g shown in FIG. 7D. Here, when the umbrella portion 10C as shown in FIG. 6 is not formed in another embodiment, the side wall layer 11 as shown in FIG. 7D is made into a single layer structure composed of only the same layer as the first metal layer 12. good. At that time, in step g, after forming the side wall layer 11 made of Cu or an alloy containing Cu as a main component, Ni, Ni-P, or other replacement metal containing Ni as a main component is used as the replacement metal layer 5. It is preferable that the side wall portion is formed by electroless plating on the surface of the side wall layer 11 (in this case, since the thickness of the replacement metal layer 5 is formed thin, the first portion for forming the umbrella portion 10C). 2 cannot be the metal layer 13).

  Further, when the sidewall layer 11 has a single layer structure, in the step i (etching step of the sidewall layer 11) shown in FIG. In order to approximate an accurate U shape with an angle formed by 4C of 90 °, the sidewall layer 11 is preferably subjected to anisotropic etching rather than isotropic etching.

  Further, as shown in FIGS. 2, 4, and 6, the longitudinal cross section of the connection terminal according to the first to third embodiments has two side wall portions 4 </ b> A to 4 </ b> C from both sides in the width direction of one bottom surface portion 3. Are substantially U-shaped in a standing manner. However, in other embodiments, as shown in FIG. 8, two or more side walls 4 </ b> D are standing upright in parallel from both sides in the width direction of one bottom surface 3 and the inner surface thereof. May be substantially U-shaped in parallel.

  Further, the connection terminal according to the present invention may have a substantially U-shaped longitudinal section. Therefore, as shown in FIG. 9 or FIG. 10, the side walls 4E and 4F are plated on the periphery of the rectangular or circular bottom surface portion 3, and the side walls 4E and 4F stand up from the bottom surface portion 3 in a cylindrical shape. The connection terminals 2E and 2F may be formed to have the bottomed square hole 15 or the bottomed round hole 16. In this case, the 2-2 arrow direction in FIG. 9 and the 2-2 arrow direction in FIG. 10 are the same as those in FIG. 2, and the longitudinal section of the connection terminals 2E and 2F having the bottomed square hole 15 or the bottomed round hole 16 The shape of the surface is substantially U-shaped, similar to the shape of the longitudinal section of the connection terminals 2A to 2C according to the ceramic mounting substrates 1A to 1C of the first to third embodiments. Further, by forming the connection terminals 2E and 2F having the bottomed square holes 15 or the bottomed round holes 16, the side surfaces of the solder bumps 31 to be joined are surrounded by the side walls 4E and 4F of the connection terminals 2E and 2F. Therefore, the bonding area and the electrical connection area between the solder bump 31 and the connection terminals 2E and 2F can be increased. Thereby, the bonding strength between the solder bump 31 and the connection terminals 2E and 2F can be improved, and the electrical resistance between the solder bump 31 and the connection terminals 2E and 2F can be lowered.

  And as for the ceramic sheet 20, HTCC can naturally be used besides LTCC.

The top view which shows the state by which the semiconductor element was mounted in the ceramic mounting board | substrate of 1st Embodiment. 2-2 sectional view of FIG. The longitudinal cross-sectional view which shows the manufacturing process of the ceramic mounting substrate of 1st Embodiment seen from the 2-2 arrow direction of FIG. 1 in order of AI. A longitudinal sectional view showing a ceramic mounting substrate of the second embodiment The longitudinal cross-sectional view which shows the manufacturing process of the ceramic mounting board of 2nd Embodiment in order of AH. A longitudinal sectional view showing a ceramic mounting board according to a third embodiment The longitudinal cross-sectional view which shows the manufacturing process of the ceramic mounting board of 3rd Embodiment in order of AJ The longitudinal cross-sectional view which shows the ceramic mounting board of other embodiment, Comprising: Three or more side wall parts stand up in parallel from the both sides of the width direction of the bottom face part, and its inner surface The top view which shows what is formed so that it may have a bottomed square hole, it is the ceramic mounting board of other embodiment The top view which shows what is formed so that it may have a bottomed round hole in the ceramic mounting board of other embodiment A longitudinal sectional view showing a conventional ceramic mounting board whose connecting terminals are formed in a flat plate shape A longitudinal sectional view showing a conventional ceramic mounting board in which the connection terminal is formed in a fork shape having two or more branches

Explanation of symbols

DESCRIPTION OF SYMBOLS 1A-1C Ceramic mounting board 2A-2C Connection terminal 3 Bottom part 4A-4C Side wall part 5 Substitution metal layer 6 Joining film 20 Ceramic sheet 21 Wiring 30 Semiconductor element 31 Bump

Claims (10)

A step of firing the ceramic sheet after embedding a bottom surface portion of the connection terminal formed in a substantially U-shaped longitudinal section in the surface of the ceramic sheet before firing;
Forming a seed film on the surface of the ceramic sheet after firing;
By forming a resist film on the surface of the seed film and then patterning the resist film, the surface of the seed film located above the bottom surface portion becomes the sidewall of the connection terminal that is substantially U-shaped. A step c for exposing a surface on which the side wall portion is formed to the outside and covering a surface other than the surface on which the side wall portion is formed;
Forming a sidewall portion on the surface of the seed film by plating the surface of the seed film exposed to the outside after the formation of the patterned resist film; and
And a step (e) of removing the resist film after forming the side wall and removing the seed film exposed to the outside by the removal of the resist film. In the step c, the resist film is heated and shrunk after patterning of the resist film, so that a taper is formed such that the width of the resist film decreases in the height direction of the resist film. Formed into
In the step d, by forming the side wall portion along the taper of the resist film, a side wall portion having an isosceles trapezoidal shape in which the upper base is longer than the lower bottom or a shape similar thereto is formed. The method for manufacturing a ceramic mounting substrate according to claim 1, wherein: 3. The step d according to claim 1, wherein in the step d, the side wall portion having the umbrella portion is formed by plating the surface of the seed film until the upper surface of the resist film is covered. The manufacturing method of the ceramic mounting board | substrate of description. A step of firing the ceramic sheet after embedding a bottom surface portion of the connection terminal formed in a substantially U-shaped longitudinal section in the surface of the ceramic sheet before firing;
Forming a seed film on the surface of the ceramic sheet after firing;
Forming a sidewall layer to be a sidewall portion on the surface of the seed film; and
Forming a resist film on the surface of the side wall layer and then patterning the resist film, thereby covering the surface of the side wall layer and the upper surface of the side wall portion with the resist film; and
Forming the sidewall by etching the sidewall layer exposed to the outside after the patterned resist film is formed; and
And a step (j) of removing the resist film after forming the side wall and removing the seed film exposed to the outside after forming the side wall. In the step g, the sidewall layer is formed by sequentially plating the first metal layer and the second metal layer on the surface of the seed film,
In the step i, only the second metal layer that is the surface layer of the sidewall layer is etched using a second metal layer etching solution that etches the second metal layer but does not etch the first metal layer. After isotropic etching, the first metal layer is etched, but only the first metal layer is etched using an etching solution for the first metal layer that does not etch the second metal layer and the seed film. The method for manufacturing a ceramic mounting substrate according to claim 4, wherein the umbrella portion is formed above the side wall portion by isotropic etching. The said bottom face part is formed using Ag, Au, Cu, or Ag-Pd which becomes the same material as the wiring embedded in the inside of the ceramic sheet. A method for manufacturing a ceramic mounting board according to claim 1. In the step b, before the seed film is formed, a replacement layer that becomes a surface layer of the bottom surface by plating Ni, Ni-P or other Ni-based replacement metal on the surface of the bottom surface. Forming a metal layer on the bottom surface,
In the step after step e or step j, the surface of the bottom surface portion is subjected to electroless Au plating, whereby Ni on the surface of the bottom surface portion is replaced with Au to form a bonding film on the surface of the bottom surface portion. The method for manufacturing a ceramic mounting substrate according to any one of claims 1 to 6, wherein: In the step d or the step g, the surface of the seed film is plated with Cu or an alloy containing Cu as a main component or other base metal to form a side wall portion body, the side wall layer, or the first metal layer. Then, Ni, Ni-P or other Ni-based replacement metal is plated on the surface of the side wall portion body or the surface of the side wall layer, or on the surface of the first metal layer. The side wall portion is formed by plating so as to be a metal layer of 2;
In the step after step e or step j, the surface of the side wall or the surface of the second metal layer is subjected to electroless Au plating, so that the Ni on the surface of the side wall or the second metal layer is formed. The method for manufacturing a ceramic mounting substrate according to any one of claims 1 to 7, wherein Ni on the surface of the substrate is replaced with Au, and a bonding film is formed on the surface of the side wall portion. The method for manufacturing a ceramic mounting substrate according to any one of claims 1 to 8, wherein the seed film has a laminated structure in which Ti or Cr is a lower layer and Cu is an upper layer. . The said connection terminal is formed so that it may have a bottomed square hole or a bottomed round hole by raising the said side wall part from the said bottom face part cylindrically. The manufacturing method of the ceramic mounting board | substrate of any one of these.

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