JP4702335B2 - Color liquid crystal display - Google Patents

Description

  The present invention relates to a color liquid crystal device used in devices such as personal computers, projectors, and viewfinders, a color display device constituting the color liquid crystal device, and a manufacturing method thereof.

  2. Description of the Related Art Conventionally, active matrix liquid crystal devices using nonlinear elements such as thin film transistors (hereinafter referred to as TFTs) and MIM (Metal-Insulator-Metal) elements made of polycrystalline silicon, amorphous silicon, etc. have been widely used. Are known. An example of the configuration of this type of liquid crystal device, particularly a color liquid crystal device, will be described with reference to FIG.

  As shown in FIG. 21A, a liquid crystal 3 is sealed between a TFT substrate 1 and a counter substrate 2, a TFT 4 and a pixel electrode 5 are formed on the TFT substrate 1, and a color filter 6 is formed on the counter substrate 2. The counter electrode 7 is formed. The TFT 4 includes a gate electrode 8, a gate insulating film 9, a silicon thin film 10 having a channel region, and source / drain electrodes 11 and 12, and the drain electrode 12 and the pixel electrode 5 are connected to each other. On the other hand, the color filter 6 is composed of three color materials 13 of red (R), green (G), and blue (B), and shields the gap between the colors between the color materials 13. The black matrix 14 (Black Matrix, hereinafter referred to as BM) is provided. In this color liquid crystal device, an electric field perpendicular to the substrate, so-called vertical electric field E1, is generated between the pixel electrode 5 and the counter electrode 7, and the liquid crystal molecules 15 are rotated by the vertical electric field E1.

  On the other hand, a color liquid crystal device of a method called in-plane switching (hereinafter referred to as IPS), which is particularly suitable for a large liquid crystal panel and can realize a wide viewing angle. Has attracted attention in recent years. FIG. 21B shows the configuration of an IPS color liquid crystal device.

  In the case of the IPS system, as shown in FIG. 21B, the structure of the TFT 4 and the color filter 6 is the same as that of the conventional liquid crystal device, but the counter electrode 16 (common electrode) is formed on the same substrate 1 side as the TFT 4. This is a major difference in configuration from the conventional liquid crystal device. In the conventional liquid crystal device, the liquid crystal molecules 15 are moved using a vertical electric field E1 in a direction perpendicular to the substrates 1 and 2. In this vertical electric field operation mode, when the liquid crystal molecules 15 are obliquely raised, the viewing angle is narrowed because the optical characteristics differ depending on the viewing angle. On the other hand, in the IPS system, a horizontal electric field E2 parallel to the TFT substrate 1 is generated between the drain electrode 12 (pixel electrode) on the TFT substrate 1 and the counter electrode 16, and the major axis is caused by the horizontal electric field E2. The liquid crystal molecules 15 are rotated so as to face in a direction parallel to the TFT substrate 1. As a result, the optical characteristics do not change depending on the viewing angle, and a good image can be obtained from any direction. In the example of FIG. 21B, the counter electrode 16 is formed of the same layer as the gate electrode 8 of the TFT 4.

  For example, when the conventional color liquid crystal device shown in FIG. 21A is manufactured, the gate electrode 8, the gate insulating film 9, the silicon thin film 10, the pixel electrode 5, and the source / drain electrodes 11 on the TFT substrate 1 , 12 patterning is required once, a total of 5 photolithography processes, and when combined with the formation of the BM14, R, G, B color materials 13 on the counter substrate 2 side, a total of about 9-10 times Photolithography process is required. In the case of the IPS color liquid crystal device shown in FIG. 21B, the gate electrode 8 and the counter electrode 16 of the TFT 4 are formed at the same time in one photolithography process. A lithography process is necessary.

  However, since an expensive photomask, exposure apparatus, or the like is used in the photolithography process in the liquid crystal device manufacturing process, the ratio of the photolithography process in the manufacturing cost of the liquid crystal device is extremely large compared to other processes. Therefore, reducing the number of photolithography processes is an important issue for reducing the manufacturing cost of the liquid crystal device. Also, if the number of photolithography processes is large, the probability of occurrence of defects increases accordingly, and the yield of products decreases. Therefore, it is desired to reduce the number of photolithography processes from the viewpoint of improving the yield.

  The present invention has been made in view of the above circumstances, and a color display device capable of realizing a reduction in manufacturing cost and an improvement in yield by reducing the number of photolithography processes as compared with a conventional manufacturing method and its manufacturing. It is an object to provide a method and a color liquid crystal device.

  Prior to the present invention, the inventor has a plurality of linear light-shielding bodies made of a semiconductor film such as silicon on a transparent substrate, and fixes a color material in openings between the plurality of linear light-shielding bodies. Has been proposed (Japanese Patent Application No. 8-152696) in which a transparent protective film such as a silicon oxide film is covered and a driving element such as a TFT is formed on the transparent protective film.

  Therefore, the present invention aims to reduce the number of photolithography steps in the manufacturing process based on the configuration of the color liquid crystal display device.

  In order to achieve the above object, a first color display device of the present invention is fixed to a plurality of linear light shields formed on a transparent substrate and openings between the plurality of linear light shields. In a color display device having a color material, a transparent protective film covering the color material, and a plurality of thin film transistors provided on the linear light shield, the thin film transistor includes a semiconductor layer having a source region and a drain region, A gate insulating film; a source line connected to the source region; a drain electrode connected to the drain region; and a gate line, wherein the gate insulating film is partially removed on the transparent substrate. It is characterized by being.

  The second color display device of the present invention covers a plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, and the color material. In a color display device having a transparent protective film and a plurality of thin film transistors provided on the linear light shield, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source region. A connected source line; a drain electrode connected to the drain region; and a gate line, the source region being in contact with a source-side impurity diffusion source, the drain region being in contact with a drain-side impurity diffusion source, The source-side impurity diffusion source constitutes at least a part of the source line.

  In the second color display device, the source-side impurity diffusion source is a semiconductor film containing a donor or an acceptor, and the source line includes at least two layers of the source-side impurity diffusion source and a metal. To do.

  A third color display device according to the present invention covers a plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, and the color material. In a color display device having a transparent protective film and a plurality of thin film transistors provided on the linear light shield, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source region. A connected source line; a drain electrode connected to the drain region; and a gate line, the source region being in contact with a source-side impurity diffusion source, the drain region being in contact with a drain-side impurity diffusion source, A gate line is formed above the semiconductor layer with the gate insulating film interposed therebetween.

  The third color display device is characterized in that the source-side impurity diffusion source constitutes at least part of the source line, and the source line is embedded with a transparent protective film.

  The third color display device is characterized in that the drain electrode is formed of the same layer as the gate line.

  The third color display device is characterized in that the storage capacitor line is formed in the same layer as the source line and substantially parallel to the source line.

  In the third color display device, the storage capacitor line also serves as a common electrode line, and a voltage for driving a liquid crystal is applied between the common electrode line and the drain electrode. It is characterized by.

  A fourth color display device of the present invention covers a plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, and the color material. In a color display device having a transparent protective film and a plurality of thin film transistors provided on the linear light shield, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source region. A source line connected to the drain region; a drain electrode connected to the drain region; and a gate line. The gate line is formed over the semiconductor layer with the gate insulating film interposed therebetween. The storage capacitor section is formed of the same layer as the gate line, and the source line, the gate insulating film, and the drain electrode form a storage capacitor portion.

  In addition, the fourth color display device has a capacity of a storage capacitor portion including a source line, a gate insulating film, and a drain electrode in its own stage, and a capacitance of a storage capacitor portion including a source line, a gate insulating film, and a drain electrode adjacent thereto. Are substantially equal to each other.

  In the fourth color display device, in addition to the drain electrode, the common electrode line is formed of the same layer as the gate line, and a voltage for driving liquid crystal is provided between the drain electrode and the common electrode line. It is the structure which is applied.

  The fourth color display device is characterized in that the gate line of the next stage also serves as the common electrode line.

  Further, a fifth color display device of the present invention includes a plurality of linear light shields formed on a transparent substrate, a color material fixed in openings between the plurality of linear light shields, and the color material. In a color display device having a transparent protective film covering a plurality of thin film transistors provided on the linear light shield, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and the source A source line connected to the region; a drain electrode connected to the drain region; and a gate line, wherein the gate line is formed above the semiconductor layer via the gate insulating film, and the drain electrode is It is characterized by being formed of the same layer as the source line.

  The fifth color display device is characterized in that a storage capacitor line is formed of the same layer as the gate line, and a storage capacitor portion is formed by the drain electrode, the gate insulating film, and the storage capacitor line. To do.

  The fifth color display device is characterized in that the gate line in the next stage also serves as the storage capacitor line.

  In the fifth color display device, the common electrode line is formed of the same layer as the gate line, and a voltage for driving liquid crystal is applied between the drain electrode and the common electrode line. It is characterized by becoming.

  The fifth color display device is characterized in that the gate line of the next stage also serves as the common electrode line.

  The fifth color display device is characterized in that the gate line in the next stage serves as both the common electrode line and the storage capacitor line.

  A sixth color display device of the present invention covers a plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, and the color material. In a color display device having a transparent protective film and a plurality of thin film transistors provided on the linear light shield, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source region. A source line connected to the drain region, a drain electrode connected to the drain region, and a gate line, wherein the source line in contact with the source region is made of a metal containing boron, and the semiconductor layer is interposed through the gate insulating film. The gate line is formed above the gate line.

  The seventh color display device of the present invention includes a plurality of linear light shields formed on a transparent substrate, a color material fixed in openings between the plurality of linear light shields, and the color material. In a color display device having a transparent protective film covering a plurality of thin film transistors provided on the linear light shield, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and the source A source line connected to the region; a drain electrode connected to the drain region; and a gate line, wherein the linear light-shielding body is formed of a water-repellent conductive film, and also serves as the source line, The gate line is formed above the semiconductor layer through the gate insulating film.

  In the seventh color display device, the surface of the linear light shield made of a semiconductor film containing a donor or an acceptor also serves as a source-side impurity diffusion source, and the lower surface of the source region is in contact with the source-side impurity diffusion source. It is characterized by that.

  Further, the seventh color display device is characterized in that the linear light-shielding body includes at least two layers of the semiconductor film and a metal.

  The seventh color display device is characterized in that the drain electrode is formed of the same layer as the gate line, and a storage capacitor portion is constituted by the source line, the gate insulating film, and the drain electrode. Is.

  The seventh color display device is characterized in that a part of the opening between the gate line and the drain electrode is shielded by the linear light shield.

  In the seventh color display device, in addition to the drain electrode, the common electrode line is formed of the same layer as the gate line, and a voltage for driving the liquid crystal is provided between the drain electrode and the common electrode line. It is the structure which is applied.

  The seventh color display device is characterized in that the gate line of the next stage also serves as the common electrode line.

  Further, the seventh color display device is characterized in that a portion where an electric field is generated in a direction different from a switching electric field direction between the drain electrode and the next-stage gate line is shielded by the linear light shield. To do.

  In addition, an eighth color display device of the present invention includes a plurality of linear light shields formed on a transparent substrate, a color material fixed in openings between the plurality of linear light shields, and the color material. In a color display device having a transparent protective film covering a plurality of thin film transistors provided on the linear light shield, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and the source region A source line connected to the drain region, a drain electrode connected to the drain region, and a gate line, wherein the linear light-shielding body is formed of a water-repellent conductive film, and also serves as the gate line, A semiconductor layer is formed above the linear light-shielding body that also serves as the gate line through the gate insulating film.

  The eighth color display device is characterized in that the surface of the linear light shield is made of a semiconductor film.

  In an eighth color display device, the semiconductor film is a semiconductor film containing a donor or an acceptor.

  The eighth color display device is characterized in that the linear light-shielding body is composed of at least two layers of the semiconductor film and metal.

  The eighth color display device is characterized in that the drain electrode is formed of the same layer as the source line.

  The eighth color display device is characterized in that a storage capacitor line is formed of the same layer as the gate line, and a storage capacitor portion is formed by the drain electrode, the gate insulating film, and the storage capacitor line. To do.

  The eighth color display device is characterized in that the gate line in the next stage also serves as the storage capacitor line.

  In the eighth color display device, the common electrode line is formed of the same layer as the gate line, and a voltage for driving the liquid crystal is applied between the drain electrode and the common electrode line. It is characterized by that.

  The eighth color display device is characterized in that the gate line of the next stage also serves as the common electrode line.

  The eighth color display device is characterized in that the gate line in the next stage serves as both the common electrode line and the storage capacitor line.

  The eighth color display device is characterized in that a part of the opening between the source line and the drain electrode is shielded from light by the common electrode line.

  The eighth color display device is characterized in that a part of the opening between the source line and the drain electrode is shielded from light by the next-stage gate line.

  The eighth color display device is characterized in that a part of the opening between the gate line and the common electrode line is shielded by the source line or the drain electrode.

  A ninth color display device of the present invention covers a plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, and the color material. In a color display device having a transparent protective film and a plurality of thin film transistors provided on the linear light shield, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source region. A drain line connected to the drain region; and a gate line, the gate line formed above the semiconductor layer via the gate insulating film, and the drain electrode serving as the source The gate insulating film is not formed on a source terminal formed in the same layer as the line and provided at an end of the source line.

  The ninth color display device is characterized in that a storage capacitor line is formed of the same layer as the gate line, and a storage capacitor portion is formed by the drain electrode, the gate insulating film, and the storage capacitor line. To do.

  The ninth color display device is characterized in that the gate line in the next stage also serves as the storage capacitor line.

  In the ninth color display device, the common electrode line is formed of the same layer as the gate line, and a voltage for driving the liquid crystal is applied between the drain electrode and the common electrode line. It is characterized by becoming.

  The ninth color display device is characterized in that the gate line in the next stage also serves as the common electrode line.

  The ninth color display device is characterized in that the gate line in the next stage serves as both the common electrode line and the storage capacitor line.

  A tenth color display device of the present invention covers a plurality of linear light shields formed on a transparent substrate, a color material fixed in openings between the plurality of linear light shields, and the color material. In a color display device having a transparent protective film and a plurality of thin film transistors provided on the linear light shield, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source region. A source line connected to the drain region; a drain electrode connected to the drain region; and a gate line, wherein the linear light-shielding body is formed of a water-repellent conductive film, and also serves as the source line, the gate A source end provided at an end of the source line, wherein a line is formed above the semiconductor layer via the gate insulating film, the drain electrode is formed of the same layer as the source line The upper is characterized in that no said gate insulating film is formed.

  In the tenth color display device, the surface of the linear light-shielding body made of a semiconductor film containing a donor or acceptor also serves as a source-side impurity diffusion source, and the lower surface of the source region is in contact with the source-side impurity diffusion source. It is characterized by that.

  Further, the ninth color display device is characterized in that the linear light shielding body is composed of at least two layers of the semiconductor film and a metal.

  The ninth color display device is characterized in that a storage capacitor line is formed of the same layer as the gate line, and a storage capacitor portion is formed by the drain electrode, the gate insulating film, and the storage capacitor line. To do.

  The tenth color display device is characterized in that the gate line of the next stage also serves as the storage capacitor line.

  In the tenth color display device, the common electrode line is formed of the same layer as the gate line, and a voltage for driving liquid crystal is applied between the drain electrode and the common electrode line. It is characterized by becoming.

  The tenth color display device is characterized in that the gate line in the next stage also serves as the common electrode line.

  The tenth color display device is characterized in that the gate line in the next stage serves as both the common electrode line and the storage capacitor line.

  The ninth color display device is characterized in that a part of the opening between the gate line of the next stage and the gate line of the next stage is shielded by the linear light shield.

  An eleventh color display device of the present invention covers a plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, and the color material. In a color display device having a transparent protective film and a plurality of thin film transistors provided on the linear light shield, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source region. A semiconductor device comprising: a connected source line; a drain electrode connected to the drain region; and a gate line, wherein the linear light-shielding body is formed of a water-repellent conductive film and also serves as the gate line. A layer is formed above the linear light shield that also serves as the gate line through the gate insulating film, and the gate insulating film is formed on a gate terminal provided at an end of the gate line. It is characterized in that no.

  The eleventh color display device is characterized in that the surface of the linear light shield is made of a semiconductor film.

  In an eleventh color display device, the semiconductor film is a semiconductor film containing a donor or an acceptor.

  The eleventh color display device is characterized in that the linear light-shielding body comprises at least two layers of the semiconductor film and metal.

  The eleventh color display device is characterized in that the drain electrode is formed of the same layer as the source line.

  The eleventh color display device is characterized in that a storage capacitor line is formed of the same layer as the gate line, and a storage capacitor portion is formed by the drain electrode, the gate insulating film, and the storage capacitor line. To do.

  The eleventh color display device is characterized in that the gate line of the next stage also serves as the storage capacitor line.

  In the eleventh color display device, the common electrode line is formed of the same layer as the gate line, and a voltage for driving a liquid crystal is applied between the drain electrode and the common electrode line. It is characterized by becoming.

  The eleventh color display device is characterized in that the gate line in the next stage also serves as the common electrode line.

  The eleventh color display device is characterized in that the gate line in the next stage serves as both the common electrode line and the storage capacitor line.

  The eleventh color display device is characterized in that a part of the opening between the source line and the drain electrode is shielded by the common electrode line.

  The eleventh color display device is characterized in that a part of the opening between the source line and the drain electrode is shielded from light by the next-stage gate line.

  The eleventh color display device is characterized in that a part of the opening between the gate line and the common electrode line is shielded from light by the source line. A first manufacturing method of the present invention includes a semiconductor film forming step of forming a semiconductor film on a transparent substrate, and patterning the semiconductor film using photolithography and etching techniques to form a plurality of linear light shielding bodies. A linear light-shielding body forming step to be formed; a color material fixing step of fixing a color material in openings between the plurality of linear light-shielding bodies; and a transparent protective film forming method for forming a transparent protective film covering the color material A first conductive film forming step of forming a first conductive film to be a source line later on the transparent protective film, and patterning the first conductive film using photolithography and etching techniques A source line forming step for forming a source line, a buried transparent protective film forming step for forming a buried transparent protective film for embedding the source line, and a semiconductor film formed on the buried transparent protective film A semiconductor film forming step, and A semiconductor layer forming step of patterning the body film using photolithography and etching techniques to form a semiconductor layer having a predetermined shape; a gate insulating film forming step of forming a gate insulating film covering the semiconductor layer; and the gate A contact hole forming step of forming a contact hole communicating with the semiconductor layer by opening a part of the insulating film using photolithography or etching technique; and a second conductive layer on the gate insulating film including the inside of the contact hole. A second conductive film forming step for forming a film; a gate line / drain electrode forming step for forming a gate line and a drain electrode by patterning the second conductive film using photolithography and etching techniques; It is characterized by having.

  In the first manufacturing method, the surface of the source line is formed of a semiconductor film containing a donor or an acceptor to form an impurity diffusion source, and the semiconductor layer is in direct contact with the source line surface, A source region is formed in the semiconductor layer by diffusion of a donor or an acceptor from an impurity diffusion source.

  According to a second manufacturing method of the present invention, a semiconductor film forming step of forming a semiconductor film on a transparent substrate, and a plurality of linear light-shielding bodies are formed by patterning the semiconductor film using photolithography and etching techniques. A linear light-shielding body forming step to be formed; a color material fixing step of fixing a color material in openings between the plurality of linear light-shielding bodies; and a transparent protective film forming method for forming a transparent protective film covering the color material A first conductive film forming step of forming a first conductive film to be a source line and a drain electrode later on the transparent protective film, and photolithography and etching techniques for the first conductive film Source line / drain electrode forming step for forming source line and drain electrode by patterning, and embedded transparent protective film forming process for forming embedded transparent protective film for embedding the source line and drain electrode A semiconductor film forming step of forming a semiconductor film on the embedded transparent protective film, and a semiconductor layer forming step of patterning the semiconductor film using photolithography and etching techniques to form a semiconductor layer of a predetermined shape A gate insulating film forming step for forming a gate insulating film covering the semiconductor layer, and a contact hole that leads to the source line by opening a part of the gate insulating film using photolithography and etching techniques A contact hole forming step to be formed; a second conductive film forming step of forming a second conductive film on the gate insulating film including the inside of the contact hole; and photolithography and etching techniques for the second conductive film. And a gate line forming step of forming a gate line by patterning using the substrate.

  In the second manufacturing method, the surface of the source line and the drain electrode is formed of a semiconductor film containing a donor or an acceptor to form an impurity diffusion source, and the semiconductor layer is directly formed on the surface of the source line and the drain electrode. A source region and a drain region are formed in the semiconductor layer by diffusion of donors or acceptors from the impurity diffusion source so as to be in contact with each other.

  A third manufacturing method of the present invention includes a semiconductor film forming step of forming a semiconductor film on a transparent substrate, and patterning the semiconductor film using photolithography and etching techniques to form a plurality of linear light-shielding bodies. A linear light-shielding body forming step to be formed; a color material fixing step of fixing a color material in openings between the plurality of linear light-shielding bodies; and a transparent protective film forming method for forming a transparent protective film covering the color material A first conductive film forming step of forming a first conductive film to be a gate line later on the transparent protective film, and patterning the first conductive film using photolithography and etching techniques A source line forming step for forming a gate line, a gate insulating film forming step for forming a gate insulating film covering the gate line, and a semiconductor film forming step for forming a semiconductor film on the gate insulating film And the semiconductor film is A semiconductor layer forming step of forming a semiconductor layer having a predetermined shape by patterning using photolithography and etching techniques, and opening the part of the gate insulating film using photolithography and etching techniques to communicate with the gate lines. A contact hole forming step of forming a contact hole, a second conductive film forming step of forming a second conductive film on the gate insulating film including the inside of the contact hole, and photolithography of the second conductive film And a source line / drain electrode forming step of forming a source line and a drain electrode by patterning using an etching technique.

  Further, in the third manufacturing method, the source line and the drain electrode are formed of a metal containing boron to be an impurity diffusion source, the source line and the drain electrode and the semiconductor layer are in direct contact, A source region and a drain region are formed in the semiconductor layer by diffusion of boron from an impurity diffusion source.

  The fourth manufacturing method of the present invention includes a semiconductor film forming step of forming a semiconductor film on a transparent substrate, and patterning the semiconductor film using photolithography and etching techniques, so that at least a part of the source line is formed. A linear light-shielding body forming step for forming a plurality of linear light-shielding bodies, a color material fixing step for fixing a color material at openings between the plurality of linear light-shielding bodies, and a transparent protective film covering the color material. A transparent protective film forming step for forming a film, a semiconductor film forming step for forming a semiconductor film on the linear light shield and the transparent protective film, and patterning the semiconductor film using photolithography and etching techniques A semiconductor layer forming step for forming a semiconductor layer having a predetermined shape, a gate insulating film forming step for forming a gate insulating film covering the semiconductor layer, and a part of the gate insulating film by photolithography and etching. A contact hole forming step of forming a contact hole that leads to the semiconductor layer by opening using a chucking technique; a conductive film forming step of forming a conductive film on the gate insulating film including the inside of the contact hole; And a gate line / drain electrode forming step of forming a gate line and a drain electrode by patterning the conductive film using photolithography and etching techniques.

  In the fourth manufacturing method, the surface of the source line is formed of a semiconductor film containing a donor or an acceptor to form an impurity diffusion source, and the semiconductor layer is in direct contact with the surface of the source line. A source region is formed in the semiconductor layer by diffusion of a donor or an acceptor from an impurity diffusion source.

  Further, the fifth manufacturing method of the present invention includes a semiconductor film forming step of forming a semiconductor film on a transparent substrate, and patterning the semiconductor film using photolithography and etching techniques, so that at least a part of the gate is formed. A linear light-shielding body forming step for forming a plurality of linear light-shielding bodies that also serve as lines; a color material fixing step for fixing a color material in an opening between the plurality of linear light-shielding bodies; A transparent protective film forming step of forming a transparent protective film covering the color material, a semiconductor film forming step of forming a semiconductor film on the transparent protective film, and the semiconductor film using photolithography and etching techniques A semiconductor layer forming step of patterning to form a semiconductor layer having a predetermined shape, and a photolithography process for forming a transparent protective film on a portion where the linear light shield extends outside the pixel matrix region and becomes a gate line terminal A contact hole forming step of forming a contact hole that leads to the gate line terminal by opening using an etching technique, and a conductive film forming step of forming a conductive film on the transparent protective film including the inside of the contact hole. And a source line / drain electrode forming step of forming a source line / drain electrode and a gate line terminal pad by patterning the conductive film using photolithography and etching techniques. It is.

  Further, in the fifth manufacturing method, the source line and the drain electrode are formed of a metal containing boron to be an impurity diffusion source, the source line and the drain electrode and the semiconductor layer are in direct contact, A source region and a drain region are formed in the semiconductor layer by diffusion of boron from an impurity diffusion source.

  A sixth manufacturing method of the present invention includes a semiconductor film forming step of forming a semiconductor film on a transparent substrate, and patterning the semiconductor film using photolithography and etching techniques to form a plurality of linear light shielding bodies. A linear light-shielding body forming step to be formed; a color material fixing step of fixing a color material in openings between the plurality of linear light-shielding bodies; and a transparent protective film forming method for forming a transparent protective film covering the color material A first conductive film forming step for forming a first conductive film to be a source line or a drain electrode later on the transparent protective film, and photolithography and etching techniques for the first conductive film. A source line forming step of forming a source line or a drain electrode by patterning, an embedded transparent protective film forming step of forming an embedded transparent protective film for embedding the source line and drain electrode, and the source A semiconductor film forming step of forming a semiconductor film on the line, drain electrode and the embedded transparent protective film; and a semiconductor that forms a semiconductor layer of a predetermined shape by patterning the semiconductor film using photolithography and etching techniques A layer formation step, and a blocking film formation for covering the portion where the source line extends outside the pixel matrix region to become a source line terminal and blocking the formation of a gate insulating film on this portion in the next step A gate insulating film forming step for forming a gate insulating film covering the semiconductor layer and the linear light shield, a blocking film removing step for removing the blocking film, and on the source line terminal and the gate insulation A second conductive film forming step for forming a second conductive film on the film; and patterning the second conductive film using photolithography and etching techniques to form a gate electrode. And it is characterized in that it has a gate electrode forming step of forming a pad for the source line terminal.

  In the sixth manufacturing method, the surface of the source line and drain electrode is formed of a semiconductor film containing a donor or acceptor to form an impurity diffusion source, and the semiconductor layer is directly formed on the surface of the source line and drain electrode. A source region and a drain region are formed in the semiconductor layer by diffusion of donors or acceptors from the impurity diffusion source so as to be in contact with each other.

  The seventh manufacturing method of the present invention includes a semiconductor film forming step of forming a semiconductor film on a transparent substrate, and patterning the semiconductor film using photolithography and etching techniques so that at least a part of the semiconductor film is formed as a source line or A linear light-shielding body forming step for forming a plurality of linear light-shielding bodies that also serve as drain electrodes, a color material fixing step for fixing a color material in openings between the plurality of linear light-shielding bodies, and a transparent covering the color material A transparent protective film forming step for forming a protective film, a semiconductor film forming step for forming a semiconductor film on the linear light shield and on the transparent protective film, and photolithography and etching techniques for the semiconductor film. A semiconductor layer forming step of forming a semiconductor layer having a predetermined shape by patterning using the linear light shielding body that extends outside the pixel matrix region and covers a portion serving as a source line terminal; A blocking film forming step for forming a blocking film for blocking the formation of the gate insulating film on the portion, a gate insulating film forming step for forming a gate insulating film covering the semiconductor layer and the linear light shielding body, A blocking film removing step of removing the blocking film, a conductive film forming step of forming a conductive film on the source line terminal and the gate insulating film, and patterning the conductive film using photolithography and etching techniques Thus, a gate electrode forming step of forming a gate electrode and a source line terminal pad is provided.

  In the seventh manufacturing method, the surface of the source line and the drain electrode is formed of a semiconductor film containing a donor or an acceptor to form an impurity diffusion source, and the semiconductor layer is directly formed on the surface of the source line and the drain electrode. A source region and a drain region are formed in the semiconductor layer by diffusion of donors or acceptors from the impurity diffusion source so as to be in contact with each other.

  The eighth manufacturing method of the present invention includes a semiconductor film forming step of forming a semiconductor film on a transparent substrate, and patterning the semiconductor film using photolithography and etching techniques so that at least a part of the gate electrode is formed. A linear light-shielding body forming step for forming a plurality of linear light-shielding bodies, a color material fixing step for fixing a color material in openings between the plurality of linear light-shielding bodies, and the linear light-shielding body serving as a pixel matrix region A blocking film forming step of forming a blocking film that extends outside and covers a portion that becomes a gate line terminal and blocks the formation of a transparent protective film on this portion in the next step; and the linear light-blocking body and the color material A transparent protective film forming step of forming a transparent protective film covering the substrate, a semiconductor film forming step of forming a semiconductor film on the transparent protective film, and a patterning of the semiconductor film using photolithography and etching techniques A semiconductor layer forming step for forming a semiconductor layer having a predetermined shape; a blocking film removing step for removing the blocking film; and a conductive film forming method for forming a conductive film on the gate line terminal and the transparent protective film. And a source line / drain electrode forming step of forming a source line / drain electrode and a gate line terminal pad by patterning the conductive film using photolithography and etching techniques. is there.

  In the eighth manufacturing method, the source line and drain electrode are formed of a metal containing boron to form an impurity diffusion source, and the source line and drain electrode and the semiconductor layer are in direct contact with each other. A source region and a drain region are formed in the semiconductor layer by diffusion of boron from an impurity diffusion source.

  Further, the color liquid crystal device of the present invention is characterized in that a counter substrate facing the color display device described above is provided, and liquid crystal is sealed between the color display device and the counter substrate. Is.

  Hereinafter, nine embodiments of the present invention will be described.

  The first embodiment is manufactured through five photolithography processes, and includes a top gate type TFT, a color display device having independent common electrode lines (5 photo, top gate, common electrode line independent type), The second embodiment is a 5 photo, top gate, common electrode line type color display device, and the third embodiment is a 5 photo, top gate, common electrode line type (source and drain electrodes are in the same layer). Color display device, the fourth embodiment is a 5-photo, bottom-gate color display device, the fifth embodiment is a 4-photo, top-gate, common electrode line type color display device, the sixth embodiment The embodiment is a 4-photo, bottom gate, common electrode line independent type color display device, and the seventh embodiment is a 4-photo, top gate, common electrode line type (no contact hole) color display device. The eighth embodiment is an example of a three-photo, top gate, common electrode line type color display device, and the ninth embodiment is an example of a three-photo, bottom gate, common electrode line type color display device. . The color display devices of all the embodiments described below are examples of IPS color display devices.

  First, a first embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 is a plan view showing a pixel portion of the color display device of the present embodiment, FIG. 2 is a cross-sectional view of the same, in which reference numeral 101 is a linear light shield, 102 is a color material, and 103 is a transparent protective film , 104 are embedded transparent protective films, 105 is a source line, 106 is a TFT, 107 is a gate line, 108 is a drain electrode, and 109 is a common electrode line.

  Note that the color display device of the present embodiment corresponds to a third color display device.

  As shown in FIG. 2, a plurality of linear light shields 101 are provided on a transparent substrate 110 such as soda glass. The linear light shielding body 101 is sometimes called a black matrix because it may be assembled in a lattice shape on the surface of the substrate and has a visible light shielding ability and looks black. The openings 111 between the plurality of linear light shields 101 in which the surface of the transparent substrate 110 is dug are portions through which light passes, and the R, G, and B color materials 102 are fixed in the openings 111. . As a result, a color filter including a BM that prevents color bleeding is configured. As a material for the transparent substrate 110, fused silica, non-alkali glass, or the like may be used in addition to soda glass.

  In the present embodiment, the linear light shield 101 is made of a semiconductor film such as an amorphous silicon film. The thickness of the semiconductor film is preferably about 1 μm or more from the viewpoint of completely blocking light. As the material for the semiconductor film, various materials such as germanium, silicon-germanium, gallium-arsenic, etc., are used in addition to silicon. In addition to the amorphous and crystalline state, the mixed state may be mixed. The physical properties required for the linear light-shielding body 101 of the present invention include that the film thickness can be deposited to about 1 to 5 μm, that the film has sufficient light-shielding ability at that time, and that is in a thermal environment of about 300 to 500 ° C. And being stable to organic solvents such as acrylic and ethanol, and having good adhesion to glass.

  On the plurality of linear light shields 101 and the color material 102, a transparent protective film 103 is provided to cover them. As the transparent protective film 103, a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is used. In addition, the surface of the transparent protective film 103 is sufficiently flattened by filling the steps formed by the linear light shielding body 101, the color material 102, and the like. A source line 105 and a common electrode line 109 are provided on the transparent protective film 103. The common electrode line 109 also serves as a storage capacitor line to be described later. The source line 105 and the common electrode line 109 are formed of the same layer. In this embodiment, the aluminum film 112 and a microcrystalline silicon film 113 containing an n-type impurity (hereinafter referred to as an n + -m-Si film) are used. A source-side impurity diffusion source) is stacked. A space between the source line 105 and the common electrode line 109 is buried with a buried transparent protective film 104. Similarly to the transparent protective film 103, the embedded transparent protective film 104 is made of a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film.

A TFT 106 is formed on the embedded transparent protective film 104. This TFT 106 is a top gate type nch-TFT in which a gate electrode 118 exists above a silicon thin film 117 having source / drain regions 114 and 115 and a channel region 116. A silicon thin film 117 is provided in contact with the source line 105, the n-type impurity diffusion region on the side in contact with the source line 105 is the source region 114, the n-type impurity diffusion region on the opposite side is the drain region 115, and the source-drain region Between 114 and 115 is a channel region 116. A gate insulating film 119 made of a silicon oxide film is formed so as to cover the silicon thin film 117, the embedded transparent protective film 104, the source line 105, the common electrode line 109, and the like, and the gate electrode 118 is formed on the gate insulating film 119. Is formed. Further, a contact hole 120 is formed in a part of the gate insulating film 119 corresponding to the drain region 115 of the silicon thin film 117, and the drain electrode 108 is formed on the gate insulating film 119. Part is connected to the drain region 115. Note that the gate electrode 118 and the drain electrode 108 are formed of the same layer, and for example, an Al—Si—Cu (aluminum-silicon-copper) alloy or the like is used.
As described above, FIG. 1 is a plan view showing the configuration of one pixel 121 in the pixel matrix in the color display device. As shown in this figure, in the present embodiment, a plurality of linear light shields 101 (indicated by two-dot chain lines in the figure) are assembled in a lattice shape, and adjacent openings between these linear light shields 101 In 111, color materials of different colors are fixed. On the linear light-shielding body 101 extending in the horizontal direction in the figure, a gate line 107 composed of gate electrodes 118 of a plurality of TFTs 106 arranged in the horizontal direction on the pixel matrix and a part of a rectangular drain electrode 108 are arranged. ing. A source line 105, a common electrode line 109, and a part of the drain electrode 108 are disposed on the linear light shielding body 101 extending in the vertical direction. Further, a part 109a of the common electrode line 109 extends to the center of the pixel 121, and a voltage for driving the liquid crystal is applied between the drain electrode 108 and the common electrode line 109a during the operation of the color display device. A so-called lateral electric field (indicated by an arrow E in the figure) is generated.

  In the pixel matrix, a signal voltage is applied to a plurality of source lines and simultaneously a scanning voltage is sequentially applied to a plurality of gate lines to form a screen of one field, but each gate line is not selected. Even in the state, each pixel needs a storage capacitor portion to hold a voltage for one field period. Therefore, in the color display device of this embodiment, as shown in FIG. 2, the common electrode line 109 also serves as a storage capacitor line, and the gate insulating film 119, the common electrode line 109 and the drain electrode facing each other with the gate insulating film 119 therebetween. A storage capacitor unit is configured at 108.

  Hereinafter, a method of manufacturing the color display device having the above configuration will be described with reference to FIGS. FIG. 3 is a process flow diagram showing the manufacturing method of the color display device of this embodiment in order. This method corresponds to the first manufacturing method and is an example having five photolithography steps.

  For example, an amorphous silicon film (amorphous-silicon, hereinafter referred to as a-Si, a semiconductor film) having a film thickness of about 3 μm is formed on a transparent substrate 110 made of soda glass using a PECVD method (semiconductor film formation). Membrane process). Next, a photoresist pattern for forming a linear light-shielding body is formed on the a-Si film using a well-known photolithography technique (referred to as “BM formation photo” in FIG. 3), and then CDE (Chemical Dry Etching). ) Method is used to etch the a-Si film to form the linear light shield 101 (linear light shield formation step). Further, the surface of the transparent substrate 110 is also dug by etching to form an opening 111 for fixing the color material in the next process. Thereafter, the photoresist pattern is removed.

  Next, R, G, and B inks are respectively injected into the openings 111 between the plurality of linear light shields 101 using a general ink jet printer. As the ink used at this time, either pigment-based ink or dye-based ink can be used. Although most of these ink components are solvent water, the transparent substrate 110 has hydrophilic properties and the a-Si film has water repellency, so that the ink surface is positioned within the transparent substrate 110. If the amount of ink is adjusted, the ink is easily held in the opening 111. Thereafter, the entire substrate is heated to dry the ink, whereby the color material 102 having a flattened surface is formed (color material fixing step).

  Next, after a silicon-containing liquid is applied to the entire surface, this is sintered (Spin-On-Glass, hereinafter referred to as SOG method), and a silicon oxide film covering the linear light-shielding body 101 and the color material 102 A transparent protective film 103 is formed (transparent protective film forming step). As the silicon-containing liquid (SOG liquid) used here, for example, a polysilazane film (Poly-Silazane, PS) can be used. Thereafter, an Al film 112 is formed on the entire surface of the transparent protective film 103 using a sputtering method, and then an n + -m-Si film 113 is formed using a PECVD method (first conductive film forming step). . Then, by continuously patterning the Al film 112 and the n + -m-Si film 113 using photolithography and etching methods, the source line 105 and the common electrode line 109 are formed (see “source line formation photo in FIG. 3). ”, A source line forming step). Next, similarly to the transparent protective film 103, the embedded transparent protective film 104 is formed by using the SOG method, and the source line 105 and the common electrode line 109 are embedded (embedded transparent protective film forming step). Thereafter, the surface of the embedded transparent protective film 104 is etched to expose the surface of the n + -m-Si film 113.

  Next, after forming an a-Si film over the entire surface by PECVD or sputtering (semiconductor film forming step), laser annealing, rapid heat treatment, or the like is performed to polycrystallize the a-Si film. The polycrystalline silicon film thus formed is patterned by photolithography and etching to form a polycrystalline silicon thin film 117 (semiconductor layer forming step denoted as “poly-Si photo” in FIG. 3). The n-type impurity in the n + -m-Si film 113 of the source line 105 that is in contact with the polycrystalline silicon thin film 117 in the process so far diffuses into the polycrystalline silicon thin film 117, so that the polycrystalline silicon thin film 117 A source region 114 and a drain region 115 are formed.

  Thereafter, a gate insulating film 119 made of a silicon oxide film is formed on the entire surface by PECVD (gate insulating film forming step), and then the drain region 115 of the polycrystalline silicon thin film 117 is formed by photolithography and etching. A part of the upper gate insulating film 119 is opened to form a contact hole 120 leading to the drain region 115 (a contact hole forming step denoted as “contact photo” in FIG. 3). Next, an Al—Si—Cu film is formed over the entire surface of the gate insulating film 119 including the inside of the contact hole 120 by a sputtering method (second conductive film forming step). Then, the gate electrode 118, the gate line 107, and the drain electrode 108 are formed by patterning the Al—Si—Cu film using photolithography and etching (the gate denoted as “gate line formation photo” in FIG. 3). Line / drain electrode forming step).

  According to the method of this embodiment, as a photolithography process, the formation of the linear light shielding body 101, the formation of the source line 105 and the common electrode line 109, the formation of the polycrystalline silicon thin film 117, the formation of the contact hole 120, the gate line A color display device having a color filter can be manufactured by only requiring the five steps of forming 107 and the drain electrode 108. Accordingly, the number of photolithography processes can be almost halved as compared with the conventional manufacturing method that requires a total of about 9 to 10 photolithography processes, so that the manufacturing cost of the liquid crystal device can be greatly reduced. . Furthermore, the yield of products can be improved by reducing the number of photolithography processes.

  The second embodiment of the present invention will be described below with reference to FIG.

  FIG. 4 is a plan view showing a pixel portion of the color display device of this embodiment, in which reference numeral 201 denotes a linear light shield, 205 denotes a source line, 206 denotes a TFT, 207 denotes a gate line, and 208 denotes a drain electrode. .

  The color display device of this embodiment corresponds to a fourth color display device. That is, in the first embodiment, a separate common electrode line is provided in a layer different from the drain electrode forming the IPS pair, whereas in this embodiment, the gate line in the same layer as the drain electrode is provided. Also serves as a common electrode line, and the common electrode line is not provided separately. In addition, the configuration, material, and the like of the linear light shield, source line, gate line, drain electrode, TFT, and the like in this embodiment can be the same as those in the first embodiment.

  As shown in FIG. 4, in the present embodiment, a plurality of linear light shields 201 are assembled in a lattice shape, and different color materials are present in adjacent openings 211 between the linear light shields 201. It has been established. On the linear light shielding body 201 extending in the horizontal direction in the drawing, a gate line 207 composed of gate electrodes 218 of a plurality of TFTs 206 arranged in the horizontal direction on the pixel matrix and a part of the substantially U-shaped drain electrode 208 are formed. Has been placed. A part of the source line 205 and the drain electrode 208 is disposed on the linear light shielding body 201 extending in the vertical direction. Further, in this color display device, the gate line 207 in the pixel matrix is scanned from the upper side to the lower side in the figure, but the next stage pixel (the lower side in the figure) is located at the center of the pixel 221 of the own stage. A part 222a of the gate line 222 of the pixel of FIG. Therefore, when the color display device is operated, a voltage for driving the liquid crystal is applied between the drain electrode 208 at its own stage and the gate line 222 at the next stage, and a lateral electric field E is generated.

  Although a detailed description of the manufacturing method of the color display device having the above-described configuration is omitted, as in the first embodiment, formation of a linear light shield, formation of a source line, formation of a polycrystalline silicon thin film, formation of contact holes This requires five photolithography steps of formation and formation of the gate electrode and drain electrode. Therefore, also in this embodiment, the same effects as those of the first embodiment, such as reduction in manufacturing cost and improvement in product yield, can be achieved.

  Further, in the case of this embodiment mode, the capacitance of the storage capacitor portion 233 including the source line 205, the gate insulating film, and the drain electrode 208 of the self-stage and the adjacent source line 205a, the gate insulating film, and the drain electrode 208 are included. Since the adjacent storage capacitor portion 233a is designed to have substantially the same capacity, the fluctuation of the capacity generated when the signal voltage is applied to each source line can be canceled by both. As a result, image flicker can be suppressed when this color display device is used in a liquid crystal device.

  In the case of the present embodiment, since it is not necessary to provide a common electrode line separately, the aperture ratio can be increased as compared with the color display device of the first embodiment.

In the first and second embodiments, a contact hole is provided on the drain region of the polycrystalline silicon thin film, and the drain electrode in the same layer as the gate line is connected to the drain region through the contact hole. The drain electrode in the same layer as the source line in contact with the lower surface of the polycrystalline silicon thin film may be embedded in the embedded transparent protective film.
A third embodiment employing this structure will be described next.

  FIG. 13 is a plan view showing a pixel portion of the color display device of the present embodiment, FIG. 14 is a cross-sectional view thereof, in which the reference numeral 601 is a linear light shield, 602 is a color material, and 603 is a transparent protective film. 604 is a buried transparent protective film, 605 is a source line, 606 is a TFT, 607 is a gate line, and 608 is a drain electrode.

  Note that the color display device of the present embodiment corresponds to a fifth color display device.

  As shown in FIG. 14, a plurality of linear light shields 601 made of an a-Si film are provided on a transparent substrate 610 such as soda glass. The openings 611 between the plurality of linear light shields 601 in which the surface of the transparent substrate 610 is dug are portions through which light passes, and R, G, and B color materials 602 are fixed in the openings 611. . As a result, a color filter including a BM that prevents color bleeding is configured. Note that as a material of the transparent substrate 610, fused silica, non-alkali glass, or the like may be used in addition to soda glass.

  A transparent protective film 603 is provided on the plurality of linear light shields 601 and the color material 602 to cover them. As the transparent protective film 603, a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is used. In addition, the surface of the transparent protective film 603 is sufficiently flattened by filling a step formed by the linear light shield 601 and the color material 602. A source line 605 and a drain electrode 608 are provided on the transparent protective film 603. The source line 605 and the drain electrode 608 are formed of the same layer, and in this embodiment, a stacked structure of an aluminum film 612 and a silicon film 613 containing an n-type impurity (hereinafter referred to as an n + -Si film). It consists of A space between the source line 605 and the drain electrode 608 is buried with a buried transparent protective film 604. Similarly to the transparent protective film 603, the embedded transparent protective film 604 is made of a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film.

  A TFT 606 is formed on the embedded transparent protective film 604. This TFT 606 is a top gate type nch-TFT in which a gate electrode 618 exists above a silicon thin film 617 having source / drain regions 614 and 615 and a channel region 616. A silicon thin film 617 is provided so as to be in contact with the source line 605 and the drain electrode 608, the n-type impurity diffusion region on the side in contact with the source line 605 is the source region 614, and the n-type impurity diffusion region on the side in contact with the drain electrode 608 is A channel region 616 is formed between the drain region 615 and the source-drain regions 614 and 615. Then, a gate insulating film 619 made of a silicon oxide film is formed so as to cover the silicon thin film 617, the embedded transparent protective film 604, the source line 605, the drain electrode 608, and the like, and the gate electrode 618 is formed on the gate insulating film 619. Has been. For the gate electrode 118, for example, an Al—Si—Cu alloy or the like is used.

  In the present embodiment, no contact hole exists in the pixel matrix. As described in detail in the sixth embodiment, a contact hole is opened in the gate insulating film 619 on the source line 605 and a source line terminal pad is provided in a terminal portion outside the pixel matrix. .

FIG. 13 is a plan view showing the configuration of one pixel in the pixel matrix in the color display device. As shown in this figure, in the present embodiment, a plurality of linear light shields 601 are assembled in a lattice shape, and color materials of different colors are present in adjacent openings 611 between the linear light shields 601. It has been established. On the linear light-shielding body 601 extending in the horizontal direction in the figure, a gate line 607 composed of gate electrodes 618 of a plurality of TFTs 606 arranged in the horizontal direction on the pixel matrix and a part of a rectangular drain electrode 608 are arranged. ing. A source line 605 and a part of the drain electrode 608 are disposed on the linear light shielding body 601 extending in the vertical direction. Further, a part of the gate line 622 at the next stage extends to the center of the pixel 621 and also serves as a common electrode line at this stage.
Accordingly, a voltage for driving the liquid crystal is applied between the drain electrode 608 and the next-stage gate line 622 during operation of the color display device, and a so-called lateral electric field E is generated.

  In this embodiment, the next-stage gate line 622 also serves as a storage capacitor line as well as the common electrode line. The gate-insulation film 619 is opposed to the next-stage gate line 622 and the drain electrode which are opposed to each other. At 608, a storage capacitor unit is configured.

  Although a detailed description of the manufacturing method of the color display device having the above configuration is omitted, in the case of the present embodiment, formation of a linear light shield, formation of a source line and a drain electrode, formation of a polycrystalline silicon thin film, contact This requires five photolithography steps of forming a hole and forming a gate electrode. Therefore, also in this embodiment, the same effects as those of the first and second embodiments, such as reduction in manufacturing cost and improvement in product yield, can be achieved. Note that the manufacturing method of the car display device of the present embodiment corresponds to the second manufacturing method.

  The fourth embodiment of the present invention will be described below with reference to FIG.

  FIG. 5 is a cross-sectional view showing a pixel portion of the color display device of the present embodiment, in which reference numerals 301 and 301k are linear light shielding bodies, 302 is a color material, 323 is a transparent protective film, 306 is a TFT, 305 Is a source line, and 308 is a drain electrode.

  Note that the color display device of the present embodiment corresponds to the sixth color display device.

  As shown in FIG. 5, a plurality of linear light shields 301 and 301k are provided on a transparent substrate 310 such as soda glass. The R, G, and B color materials 302 are fixed to the openings 311 between the plurality of linear light shields 301 and 301k in which the surface of the transparent substrate 310 is dug down, thereby forming a color filter. As a material for the transparent substrate 310, fused silica, non-alkali glass, or the like may be used in addition to soda glass. Further, the linear light shields 301 and 301k are made of, for example, an a-Si film. A transparent protective film 323 made of a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is provided on the linear light shields 301 and 301k and the color material 302, and the linear light shields 301 and 301k and the color material 302 are provided. The level difference between and is flattened.

  A TFT 306 is formed on the transparent protective film 323. The TFT 306 is a bottom gate type pch-TFT in which a gate electrode exists on the lower side, and a gate electrode 318 made of a tantalum nitride film is formed on the transparent protective film 323, and the surface of the gate electrode 318 and the transparent protective film 323 is formed. A gate insulating film 319 is formed to cover. A polycrystalline silicon thin film 317 is formed thereon, and a source line 305 and a drain electrode 308 made of an Al film containing boron (hereinafter referred to as a B-Al film) are provided on the polycrystalline silicon thin film 317. . The portions of the polycrystalline silicon thin film 17 that are in contact with the B-Al film are p-type impurity diffusion regions, which are a source region 314 and a drain region 315, respectively. The common electrode line 309 is formed of the same layer as the gate electrode 318. As in the second embodiment, a common electrode line may not be provided separately, and a gate line at the next stage may serve as the common electrode line 309. When the color display device is operated, a voltage for driving the liquid crystal is applied between the drain electrode 308 and the common electrode line 309, and a lateral electric field E is generated.

  Although a detailed description of the manufacturing method of the color display device having the above-described configuration is omitted, it corresponds to the manufacturing method according to claims 73 and 74. That is, five photolithographic steps including formation of a linear light shielding body, formation of a gate electrode, formation of a polycrystalline silicon thin film, formation of a contact hole for conducting to the gate electrode, formation of a source line and a drain electrode are performed. It is necessary. Therefore, also in this embodiment, the same effects as those of the first and second embodiments, such as reduction in manufacturing cost and improvement in product yield, can be achieved.

  Hereinafter, a fifth embodiment of the present invention will be described with reference to FIGS.

  FIG. 6 is a plan view showing a pixel portion of the color display device of the present embodiment, FIG. 7 is a cross-sectional view of the same, in which 401 and 401k are linear light shielding bodies, 402 is a color material, and 423 is transparent. A protective film, 406 is a TFT, 407 is a gate line, and 408 is a drain electrode.

  Note that the color display device of the present embodiment corresponds to the seventh color display device.

  As shown in FIG. 7, a plurality of linear light shields 401 and 401k are provided on a transparent substrate 410 such as soda glass. The color materials 402 of R, G, and B are fixed to the openings 411 between the plurality of linear light shields 401 and 401k in which the surface of the transparent substrate 410 is dug down, and a color filter is configured. As a material of the transparent substrate 410, fused silica, non-alkali glass, or the like may be used in addition to soda glass. Further, the linear light shields 401 and 401k are configured by a laminated structure of a tantalum nitride (TaN) film 424 and an n + -m-Si film 413, for example. A transparent protective film 423 made of a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is provided on the color material 402, and a step between the linear light shielding bodies 401 and 401k and the color material 402 is filled. It is flattened.

  A TFT 406 is formed on the linear light shields 401 and 401 k and the transparent protective film 423. The TFT 406 is a top gate type nch-TFT, and a silicon thin film 417 is provided so as to be in contact with the linear light shields 401 and 401k, and a portion of the linear light shields 401 and 401k that is in contact with the n + -m-Si film 413 is formed. An n-type impurity diffusion region is formed as a source region 414 and a drain region 415, respectively. A gate insulating film 419 made of a silicon oxide film is formed so as to cover the silicon thin film 417, the linear light shields 401 and 401k, the transparent protective film 423, and the like, and a gate electrode 418 is formed on the gate insulating film 419. Yes. In addition, a contact hole 420 is formed in a part of the gate insulating film 419 corresponding to the drain region 415 of the silicon thin film 417, a drain electrode 408 is formed on the gate insulating film 419, and the drain electrode 408 is connected to the contact hole 420. Part is connected to the drain region 415. Note that the gate electrode 418 and the drain electrode 408 are formed of the same layer, and an Al film, for example, is used.

  As described above, FIG. 6 is a plan view showing the configuration of one pixel in the pixel matrix in the color display device. As shown in this figure, among the plurality of linear light shielding bodies 401, the linear light shielding body 401k extending in the vertical direction is in contact with the source region 414 of the TFT 406, and has a function of shielding light, as well as a pixel matrix. It also serves as a source line 405 connecting the pixels arranged in the upper vertical direction. On the other hand, the linear light shielding body 401 extending in the horizontal direction literally has only a function of shielding light. In the present embodiment, the linear light shielding body 401k extending in the vertical direction also serves as the source line 405. Therefore, the two linear light shielding bodies 401k extending in the vertical direction are adjacent to each other. Since the source lines 405 are short-circuited when they come into contact with each other, the linear light-shielding body 401 extending in the horizontal direction and the linear light-shielding body 401k extending in the vertical direction need to be formed separately. That is, the plurality of linear light shields in this embodiment are not in a lattice shape, and the openings 411 adjacent in the vertical direction are connected in the vertical direction with a slight gap 425. For this reason, in the case of the present embodiment, the color material 402 of a different color cannot be fixed to the openings 411 adjacent in the vertical direction, and the color filter is a vertical stripe type.

In this embodiment mode, a storage capacitor portion is formed by the gate insulating film 419 and the source line 405 and the drain electrode 408 at adjacent stages facing each other with the gate insulating film 419 interposed therebetween.
On the linear light shields 401 and 401k, a gate line 407 composed of gate electrodes 418 of a plurality of TFTs 406 arranged in the horizontal direction on the pixel matrix and a drain electrode 408 are arranged. Here, the drain electrode 408 of the own stage and the gate line 422 of the next stage each have a comb blade shape, and are arranged so as to be engaged with each other.
As in the second embodiment, when the color display device operates, a voltage for driving the liquid crystal is applied between the drain electrode 408 of the own stage and the gate line 422 of the next stage, and a lateral electric field E is generated. It has become. A horizontal electric field E is generated in the direction indicated by the arrow E in the figure in the majority of the opening 411, but in the vicinity of the tip of the drain electrode 408 or the tip of the next-stage gate line 422, Generates a transverse electric field in a different direction, for example, in the direction of arrow E ′. In that case, the direction of the liquid crystal molecules changes only in this portion, and color unevenness occurs. Therefore, a linear light-shielding body 401 is provided to prevent color unevenness.

  Hereinafter, a method of manufacturing the color display device having the above configuration will be described with reference to FIGS. FIG. 8 is a process flow diagram illustrating the manufacturing method of the color display device of the present embodiment step by step. This method corresponds to the fourth manufacturing method, and is an example having four photolithography steps.

  For example, a 2 μm-thick tantalum nitride film 424 is formed on a transparent substrate 410 made of soda glass using a sputtering method, and then a 1 μm-thick n + -m-Si film 413 (semiconductor film) is formed using a PECVD method. Is deposited (semiconductor film deposition step). Next, a photoresist pattern for forming the linear light shields 401 and 401k is formed on the n + -m-Si film 413 using a well-known photolithography technique (denoted as “BM and source line formation photo” in FIG. 8). ), The n + -m-Si film 413 and the tantalum nitride film 424 are continuously etched using the CDE method to form the linear light shielding bodies 401 and 401k that also serve as the source lines 405 (formation of the linear light shielding body). Process). Further, the surface of the transparent substrate 410 is also dug down by 1 μm by wet etching using hydrofluoric acid to form an opening 411 for fixing the color material in the next step. Thereafter, the photoresist pattern is removed.

  Next, R, G, and B inks are respectively injected into the openings 411 between the plurality of linear light shields 401 and 401k using a general ink jet printer. As the ink used at this time, either pigment-based ink or dye-based ink can be used. Thereafter, the entire substrate is heated to dry the ink, whereby a color material 402 having a flattened surface is formed (color material fixing step).

  Next, after forming a laminated film of a 1 μm-thick PSG film and a 2 μm-thick intrinsic polysilazane film covering the linear light-shielding bodies 401 and 401k and the color material 402, light etching is performed to form the linear light-shielding body. The laminated films 401 and 401k are removed, and a transparent protective film 423 that covers only the color material 402 is formed (transparent protective film forming step). Thereafter, an a-Si film having a thickness of 500 mm is formed on the entire surface by PECVD (semiconductor film forming step), and then laser annealing is performed to polycrystallize the a-Si film. A polycrystalline silicon thin film 417 is formed by patterning the polycrystalline silicon film thus formed using photolithography and etching (semiconductor layer forming step denoted as “poly-Si photo” in FIG. 8). The n-type impurities in the n + -m-Si film 413 that are in contact with the polycrystalline silicon thin film 417 in the steps so far diffuse into the polycrystalline silicon thin film 417, so that the source region 414, A drain region 415 is formed.

  Thereafter, a gate insulating film 419 made of a silicon oxide film having a thickness of 1200 mm is formed on the entire surface by PECVD (gate insulating film forming step), and then the polycrystalline silicon thin film 417 is formed by photolithography and etching. A contact hole 420 leading to the drain region 415 is formed by opening a part of the gate insulating film 419 corresponding to the drain region 415 (contact hole forming step shown as “contact photo” in FIG. 8). Next, an Al film having a thickness of 1 μm is formed on the entire surface of the gate insulating film 419 including the inside of the contact hole 420 by sputtering (conductive film forming process). Then, the Al film is patterned by photolithography and etching to form the gate line 407 (gate electrode 418) and the drain electrode 408 (referred to as “gate line formation photo” in FIG. 8). Electrode forming step).

  In the method of the present embodiment, the linear light-shielding body 401k also serves as the source line 405. By eliminating the independent common electrode line, the photolithography process is reduced once compared to the manufacturing method of the first embodiment, A color display device is manufactured with only four photolithography steps: the formation of the linear light shields 401 and 401k, the formation of the polycrystalline silicon thin film 417, the formation of the contact holes 420, and the formation of the gate lines 407 and the drain electrodes 408. It becomes possible to do. Therefore, in the present embodiment, the effects of the first to fourth embodiments such as reduction in manufacturing cost and improvement in product yield can be further enhanced.

  Hereinafter, a sixth embodiment of the present invention will be described with reference to FIGS.

  FIG. 9 is a plan view showing a pixel portion of the color display device of the present embodiment, FIG. 11 is a cross-sectional view of the same, in which 501 and 501k are linear light-shielding bodies, 502 is a color material, and 523 is transparent. A protective film, 506 is a TFT, 505 is a source line, and 508 is a drain electrode.

  Note that the color display device of the present embodiment corresponds to an eighth color display device.

  As shown in FIG. 11, a plurality of linear light shields 501 and 501k are provided on a transparent substrate 510 such as soda glass. The R, G, and B color materials 502 are fixed in the openings 511 between the plurality of linear light shields 501 and 501k in which the surface of the transparent substrate 510 is dug down, thereby forming a color filter. Note that as a material of the transparent substrate 510, fused silica, non-alkali glass, or the like may be used in addition to soda glass. Further, the linear light shields 501 and 501k have a laminated structure of, for example, a tantalum nitride film 524 and an n + -m-Si film 513. A transparent protective film 523 made of a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is provided on the linear light shields 501 and 501k and the color material 502, and the linear light shields 501 and 501k and the color material 502 are provided. The level difference between and is flattened.

A TFT 506 is configured including a part of the linear light shields 501 and 501k and the transparent protective film 523. That is, the TFT 506 is a bottom gate type pch-TFT in which a gate electrode exists on the lower side, and a part of the linear light shielding body 501k also serves as the gate electrode 518, and is transparent on the linear light shielding body 501k. The protective film 523 also serves as the gate insulating film 519. A polycrystalline silicon thin film 517 is formed thereon, and a source line 505 and a drain electrode 508 made of a B—Al film are provided on the polycrystalline silicon thin film 517, and a portion in contact with the B—Al film is a p-type. An impurity diffusion region is formed as a source region 514 and a drain region 515, respectively. Further, the other linear light shield 501 also serves as the common electrode line 509.
As described above, FIG. 9 is a plan view showing the configuration of one pixel in the pixel matrix in the color display device. As shown in this figure, among the plurality of linear light shielding bodies, one linear light shielding body 501k extending in the horizontal direction also serves as the gate electrode 518 of the TFT 506 described above, and accordingly, in the horizontal direction on the pixel matrix. A gate line 507 connecting the pixels arranged in a row. Another linear light shield 501 extending in the horizontal direction also serves as the common electrode line 509, and has a portion 509 a extending in the vertical direction at the center of the pixel 521. On these linear light shields 501 and 501k, a source line 505 of a plurality of TFTs 506 arranged in the vertical direction on the pixel matrix and a drain electrode 508 having a substantially rectangular shape are arranged. In the operation of the color display device, a voltage for driving the liquid crystal is applied between the drain electrode 508 and the common electrode line 509 so that a lateral electric field E is generated.

  In addition, as illustrated in FIG. 9, the opening between the source line 505 and the drain electrode 508 is shielded by the common electrode line 509, and the opening between the gate line 507 and the common electrode line 509 is the source line 505 or The drain electrode 508 is shielded from light so that light leakage is prevented. In this embodiment mode, the common electrode line 509 also serves as a storage capacitor line, and the storage capacitor portion is configured by the gate insulating film 519 and the common electrode line 509 and the drain electrode 508 which are opposed to each other with the gate insulating film 519 interposed therebetween. .

  FIG. 10 is a diagram showing terminal portions outside the pixel matrix. The end portions of the gate line 507 and the common electrode line 509 are rectangular terminal portions 526 and 527, respectively, and contact holes 528 and 529 are opened in the transparent protective film 523 thereon. A common potential supply line 530 formed of the same layer as the source line 505 and the drain electrode 508 is provided on the common electrode line terminal 527, and is connected to the common electrode line 509 at the contact hole 528. . On the gate line terminal 526, a gate line terminal pad 531 formed of the same layer as the source line 505 and the drain electrode 508 is provided.

  Hereinafter, a method of manufacturing the color display device having the above configuration will be described with reference to FIGS. FIG. 12 is a process flow diagram showing the manufacturing method of the color display device of this embodiment step by step. This method corresponds to the fifth manufacturing method, and is an example having four photolithography steps.

  For example, a 2 μm-thick tantalum nitride film 524 is formed on a transparent substrate 510 made of soda glass by sputtering, and then a 1 μm-thick n + -m-Si film 513 (semiconductor film) is formed by PECVD. Is deposited (semiconductor film deposition step). Note that the n + -m-Si film 513 is formed here in order to impart water repellency to the linear light-shielding body, and if it can be controlled in the next ink injection process, it is not necessarily n + -m-Si. There is no need to provide the film 513. Next, after forming a photoresist pattern for forming a linear light-shielding body on the n + -m-Si film 513 using a well-known photolithography technique (denoted as “BM and gate line formation photo” in FIG. 12). Then, the n + -m-Si film 513 and the tantalum nitride film 524 are continuously etched using the CDE method to form the linear light shielding bodies 501 and 501k that also serve as the gate electrode 518 or the common electrode line 509 (linear light shielding body formation) Process). Further, the surface of the transparent substrate 510 is dug down by wet etching using hydrofluoric acid to form an opening 511 for fixing the color material in the next step. Thereafter, the photoresist pattern is removed.

  Next, R, G, and B inks are respectively injected into the openings 511 between the plurality of linear light shields 501 and 501k using a general ink jet printer. As the ink used at this time, either pigment-based ink or dye-based ink can be used. Thereafter, the entire substrate is heated to dry the ink, thereby forming a color material 502 having a flattened surface (color material fixing step).

  Next, a laminated film of a 1 μm thick PSG film and a 2 μm thick intrinsic polysilazane film covering the linear light shields 501 and 501k and the color material 502 is formed, and the portion on the linear light shield 501k is the gate. A transparent protective film 523 that also serves as the insulating film 519 is formed (transparent protective film forming step). Thereafter, an a-Si film is formed on the entire surface by PECVD (semiconductor film forming step), and then laser annealing is performed to polycrystallize the a-Si film. A polycrystalline silicon thin film 517 is formed by patterning the polycrystalline silicon film thus formed using photolithography and etching (semiconductor layer forming step denoted as “poly-Si photo” in FIG. 12).

  Thereafter, contact holes 528 and 529 are opened in the transparent protective film 523 on the gate line terminal 526 and the common electrode line terminal 527 outside the pixel matrix by using photolithography and etching (denoted as “contact photo” in FIG. 12). , Contact hole forming step). Next, a B-Al film having a thickness of 1 μm is formed on the entire surface including the insides of the contact holes 528 and 529 by using a sputtering method (conductive film forming step). Then, by patterning the B-Al film using photolithography and etching, a source line 505, a drain electrode 508, a common potential supply line 530, a gate line terminal pad 531 and the like are formed (see “source” in FIG. 12). Source / drain electrode formation process ”, referred to as“ line / drain electrode formation photo ”. Thereafter, boron diffuses into a portion of the polycrystalline silicon thin film 517 in contact with the B-Al film to form a p-type impurity diffusion region, and a source region 514 and a drain region 515 are formed.

  In the method of the present embodiment, the linear light-shielding bodies 501 and 501k also serve as the gate line 507 or the common electrode line 509, so that the number of photolithography steps is reduced once compared to the manufacturing method of the first embodiment, and the linear shape A color display device is manufactured with only four photolithography steps including the formation of the light shields 501 and 501k, the formation of the polycrystalline silicon thin film 517, the formation of the contact holes 528 and 529, and the formation of the source line 505 and the drain electrode 508. It becomes possible to do. Therefore, also in the present embodiment, it is possible to achieve the same effects as those of the fifth embodiment, such as reduction in manufacturing cost and improvement in product yield.

  In the sixth embodiment, the common electrode line 509 also serves as a storage capacitor line. However, instead of this configuration, independent holding is performed by the same layer as the gate line 507, that is, the linear light shields 501 and 501k. A capacitor line may be formed, or the next-stage gate line may also serve as a storage capacitor line. In addition, the common electrode line 509 is provided separately from the gate line 507. However, instead of this configuration, the next-stage gate line may also serve as the common electrode line. It may be configured to serve as both the common electrode line and the storage capacitor line. These color display devices correspond to an eighth color display device.

  A seventh embodiment of the present invention will be described below with reference to FIGS.

  FIG. 13 is a plan view showing a pixel portion of the color display device of the present embodiment, FIG. 14 is a cross-sectional view thereof, in which the reference numeral 601 is a linear light shield, 602 is a color material, and 603 is a transparent protective film. 604 is a buried transparent protective film, 605 is a source line, 606 is a TFT, 607 is a gate line, and 608 is a drain electrode. The color display device of this embodiment is the same as the color display device of the third embodiment with respect to the structure of the pixel portion. The color display device of the present embodiment corresponds to the ninth color display device.

  As shown in FIG. 14, a plurality of linear light shields 601 made of an a-Si film are provided on a transparent substrate 610 such as soda glass. The openings 611 between the plurality of linear light shields 601 in which the surface of the transparent substrate 610 is dug are portions through which light passes, and R, G, and B color materials 602 are fixed in the openings 611. . As a result, a color filter including a BM that prevents color bleeding is configured. Note that as a material of the transparent substrate 610, fused silica, non-alkali glass, or the like may be used in addition to soda glass.

  A transparent protective film 603 is provided on the plurality of linear light shields 601 and the color material 602 to cover them. As the transparent protective film 603, a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is used. In addition, the surface of the transparent protective film 603 is sufficiently flattened by filling a step formed by the linear light shield 601 and the color material 602. A source line 605 and a drain electrode 608 are provided on the transparent protective film 603. The source line 605 and the drain electrode 608 are formed of the same layer, and in this embodiment, a stacked structure of an aluminum film 612 and a silicon film 613 containing an n-type impurity (hereinafter referred to as an n + -Si film). It consists of A space between the source line 605 and the drain electrode 608 is buried with a buried transparent protective film 604. Similarly to the transparent protective film 603, the embedded transparent protective film 604 is made of a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film.

  A TFT 606 is formed on the embedded transparent protective film 604. This TFT 606 is a top gate type nch-TFT in which a gate electrode 618 exists above a silicon thin film 617 having source / drain regions 614 and 615 and a channel region 616. A silicon thin film 617 is provided so as to be in contact with the source line 605 and the drain electrode 608, the n-type impurity diffusion region on the side in contact with the source line 605 is the source region 614, and the n-type impurity diffusion region on the side in contact with the drain electrode 608 is A channel region 616 is formed between the drain region 615 and the source-drain regions 614 and 615. Then, a gate insulating film 619 made of a silicon oxide film is formed so as to cover the silicon thin film 617, the embedded transparent protective film 604, the source line 605, the drain electrode 608, and the like, and the gate electrode 618 is formed on the gate insulating film 619. Has been. For the gate electrode 118, for example, an Al—Si—Cu alloy or the like is used.

  In the present embodiment, no contact hole exists in the pixel matrix. Further, there is no contact hole in the terminal portion outside the pixel matrix as described in the section of the sixth embodiment, and on the source line terminal formed at the end portion of the source line extending outside the pixel matrix, A source line terminal pad made of the same Al—Si—Cu alloy as the gate electrode is directly formed (not shown).

FIG. 13 is a plan view showing the configuration of one pixel in the pixel matrix in the color display device. As shown in this figure, in the present embodiment, a plurality of linear light shields 601 are assembled in a lattice shape, and color materials of different colors are present in adjacent openings 611 between the linear light shields 601. It has been established. On the linear light-shielding body 601 extending in the horizontal direction in the figure, a gate line 607 composed of gate electrodes 618 of a plurality of TFTs 606 arranged in the horizontal direction on the pixel matrix and a part of a rectangular drain electrode 608 are arranged. ing. A source line 605 and a part of the drain electrode 608 are disposed on the linear light shielding body 601 extending in the vertical direction. Further, a part of the gate line 622 at the next stage extends to the center of the pixel 621 and also serves as a common electrode line at this stage.
Accordingly, a voltage for driving the liquid crystal is applied between the drain electrode 608 and the next-stage gate line 622 during operation of the color display device, and a so-called lateral electric field E is generated.

  In this embodiment, the next-stage gate line 622 also serves as a storage capacitor line as well as the common electrode line. The gate-insulation film 619 is opposed to the next-stage gate line 622 and the drain electrode which are opposed to each other. At 608, a storage capacitor unit is configured.

  Although a detailed description of the manufacturing method of the color display device having the above-described configuration is omitted, in the case of the present embodiment, the linear light-shielding body and the source line are configured by separate layers, respectively, as in the first embodiment. Therefore, the number of photolithography processes is increased by one time for the linear light shielding body forming process as compared with the fifth embodiment. However, since there is no contact hole in this color display device, one photolithography process for forming the contact hole is reduced. Therefore, the color display device manufacturing method of the present embodiment requires four photolithography processes as a result. Note that the method of not forming the contact hole will be described in detail in the following sections of the eighth and ninth embodiments.

  In this embodiment mode, the gate line 622 in the next stage serves as both the common electrode line and the storage capacitor line. However, an independent common electrode line and storage capacitor line are provided in the same layer as the gate line. It may be. These color display devices correspond to the ninth color display device.

  Hereinafter, an eighth embodiment of the present invention will be described with reference to FIGS.

  FIG. 15 is a plan view showing a pixel portion of the color display device of this embodiment, FIG. 16 is a cross-sectional view of the same, in which the reference numerals 701 and 701k are linear light shields, 702 is a color material, and 723 is transparent. A protective film, 706 is a TFT, 705 is a source line, and 707 is a gate line.

  Note that the color display device of the present embodiment corresponds to the tenth color display device.

  As shown in FIG. 16, a plurality of linear light shields 701 and 701k are provided on a transparent substrate 710 made of soda glass or the like. The R, G, and B color materials 702 are fixed to the openings 711 between the plurality of linear light shields 701 and 701k in which the surface of the transparent substrate 710 is dug down, thereby forming a color filter. Note that as a material of the transparent substrate 710, fused silica, non-alkali glass, or the like may be used in addition to soda glass. Further, the linear light shields 701 and 701k are configured by a laminated structure of, for example, a tantalum nitride film 724 and an n + -m-Si film 713. A transparent protective film 723 made of a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is provided on the color material 702, and a step between the linear light shielding bodies 701 and 701k and the color material 702 is filled. It is flattened.

  A TFT 706 is formed on the linear light shields 701 and 701 k and the transparent protective film 723. This TFT 706 is a top gate type nch-TFT, and a silicon thin film 717 is provided so as to be in contact with the linear light shields 701 and 701k, and the portions of the linear light shields 701 and 701k that are in contact with the n + -m-Si film are n. This is a type impurity diffusion region, which is a source region 714 and a drain region 715, respectively. In this embodiment mode, the linear light shield 701 also serves as the source line 705, and the linear light shield 701 k also serves as the drain electrode 708. A gate insulating film 719 made of a silicon oxide film is formed so as to cover the silicon thin film 717, the linear light shields 701 and 701k, the transparent protective film 723, and the like, and an Al—Si—Cu film is formed on the gate insulating film 719. A gate electrode 718 is formed. In the present embodiment, no contact hole exists in the pixel matrix. Further, there is no contact hole in the terminal portion outside the pixel matrix as described in the section of the sixth embodiment, and on the source line terminal formed at the end portion of the source line extending outside the pixel matrix, A source line terminal pad made of the same Al—Si—Cu film as the gate electrode is directly formed (not shown).

  FIG. 15 is a plan view showing the configuration of one pixel in the pixel matrix in the color display device. As shown in this figure, among the plurality of linear light shields, a linear linear light shield 701 extending in the vertical direction also serves as a source line 705, and a rectangular linear light shield 701k is a drain electrode 708. It also serves as. A gate line 707 extends in the horizontal direction of the pixel matrix, and a next-stage gate line 722 also serving as a common electrode line extends in the center of each pixel 721. In the operation of the color display device, a voltage for driving the liquid crystal is applied between the drain electrode 708 at its own stage and the gate line 722 at the next stage, and a lateral electric field E is generated. In addition, there is a region where none of the source line 705, the drain electrode 708, and the gate line 707 exists in the upper right portion of each pixel 721 in the figure, and the linear light shielding body 701 for preventing light leakage in this region. , 701k, the light shielding body 701a made of the same layer is provided.

  In this embodiment, the next-stage gate line 722 also serves as a storage capacitor line as well as the common electrode line. The gate-insulation film 719 is opposed to the next-stage gate line 722 and the drain electrode that are opposed to each other. At 708, a storage capacitor unit is configured.

  Hereinafter, a method of manufacturing the color display device having the above configuration will be described with reference to FIGS. FIG. 17 is a process flow diagram showing the manufacturing method of the color display device of this embodiment in order. This method corresponds to the seventh manufacturing method and is an example having three photolithography steps.

  For example, a tantalum nitride film 724 having a film thickness of 2 μm and a specific resistance of 0.36Ω / □ is formed on a transparent substrate 710 made of soda glass by sputtering, and then n + −m having a film thickness of 2000 mm using PECVD. A Si film 713 (semiconductor film) is formed (semiconductor film forming step). Note that the film thickness of the n + -m-Si film 713 can be in a range of about 1000 to 4000 mm. Thereafter, RTA annealing may be performed at a temperature of 700 ° C. (substrate temperature of 290 ° C.) for about 1 second. Next, after forming a photoresist pattern for forming a linear light-shielding body on the n + -m-Si film 713 using a well-known photolithography technique (denoted as “BM and source line formation photo” in FIG. 17). Then, the n + -m-Si film 713 and the tantalum nitride film 724 are continuously etched using the CDE method to form the linear light shielding bodies 701 and 701k that also serve as the source line 705 or the drain electrode 708 (linear light shielding body forming step). ). Further, the surface of the transparent substrate 710 is dug down by 2 μm by wet etching using 1:30 hydrofluoric acid to form an opening 711 for fixing the color material in the next step. Thereafter, the photoresist pattern is removed.

  Next, R, G, and B inks are respectively injected into the openings 711 between the plurality of linear light shields 701 and 701k using a general ink jet printer. As the ink used at this time, either pigment-based ink or dye-based ink can be used. Thereafter, the entire substrate is heated to dry the ink, whereby a color material 702 having a flattened surface is formed (color material fixing step).

  Next, a laminated film of a 1 μm thick PSG film and a 1 μm thick intrinsic polysilazane film (NSG film) covering the linear light shields 701 and 701k and the color material 702 is formed, and then H 2 O at a temperature of 200 ° C. -O2 annealing is performed to improve the quality of the underlying PSG film. Thereafter, an NSG film having a thickness of 2 μm is further formed, and then H 2 O—O 2 annealing at a temperature of 250 ° C. is performed to form a transparent protective film having a thickness of 4 μm as a whole. Next, light etching using 1:30 hydrofluoric acid is performed to remove the laminated film on the linear light shields 701 and 701k, and a transparent protective film 723 covering only the color material 702 is formed (transparent protective film formation). Membrane process).

  Next, an m-Si film having a thickness of 500 mm is formed on the entire surface by PECVD at a temperature of 290 ° C. (semiconductor film forming process), and then subjected to KrF laser annealing with an energy of 220 mJ / cm 2 to form an m-Si film. Is polycrystallized. At this time, RTA annealing may be performed in addition to laser annealing, or RTA annealing may be performed instead of laser annealing. At this time, the RTA annealing conditions are a temperature of 700 ° C. (substrate temperature of 290 ° C.) and about 1 second. Then, the polycrystalline silicon film thus formed is patterned by photolithography and etching to form a polycrystalline silicon thin film 717 (semiconductor layer forming step described as “poly-Si photo” in FIG. 17). . The n + -m-Si film 713 of the linear light-shielding bodies 701 and 701k that are in contact with the polycrystalline silicon thin film 717 in the process so far serves as an impurity diffusion source, and n-type impurities therein are contained in the polycrystalline silicon thin film 717 By diffusing, a source region 714 and a drain region 715 are formed in the polycrystalline silicon thin film 717.

  Next, a polyimide film (blocking film) is applied on the region where the source line terminal portion outside the pixel matrix is formed. This polyimide film is a film for preventing the gate insulating film of the next process from being formed in this region (blocking film forming process). As a specific method for applying the polyimide film, for example, it may be applied using a brush dipped in a polyimide melt. Then, using a TEOS-PECVD method at a temperature of 290 ° C., a silicon oxide film covering the surfaces of the polycrystalline silicon thin film 717, the linear light shielding bodies 701 and 701k, and the transparent protective film 723 is removed except for the region where the polyimide film is formed. A gate insulating film 719 is formed (gate insulating film forming step). Next, after removing the polyimide film (blocking film removing step), an Al—Si—Cu film having a thickness of 1 μm and a specific resistance of 30 mΩ / □ is formed on the entire surface by sputtering (conductive film forming step). . Then, by patterning the Al—Si—Cu film using photolithography and etching, a gate line 707 and a source line terminal pad are formed (referred to as “gate line formation photo” in FIG. 17). Process).

  In the method of the present embodiment, the linear light-shielding bodies 701 and 701k also serve as the source line 705 and the drain electrode 708, so that the number of photolithography steps is reduced once compared to the manufacturing method of the first embodiment, and the intermediate steps are performed. By using the polyimide film that prevents the gate insulating film from being formed at the terminal portion, it is not necessary to form a contact hole, and the photolithography process is further reduced once. As a result, it is possible to manufacture a color display device only by three photolithography steps of forming the linear light shields 701 and 701k, forming the polycrystalline silicon thin film 717, and forming the gate line 707. Therefore, according to the present embodiment, it is possible to further enhance the same effects as the above-described embodiment, such as reduction in manufacturing cost and improvement in product yield.

  Furthermore, as described above, since the processing temperature throughout the entire process is 290 ° C. or less, a color display device can be manufactured without any trouble using an inexpensive soda glass without using an expensive fused quartz substrate or the like as a transparent substrate. can do. Therefore, in addition to the reduction in the number of photolithography processes, the manufacturing cost can be further reduced by the effect of using soda glass.

  Note that in this embodiment, the gate line 722 in the next stage serves as both a common electrode line and a storage capacitor line, but an independent common electrode line and storage capacitor line are provided in the same layer as the gate line. It may be. These color display devices correspond to the tenth color display device.

  The ninth embodiment of the present invention will be described below with reference to FIGS.

  18 is a plan view showing a pixel portion of the color display device of this embodiment, FIG. 19 is a cross-sectional view of the same, in which 801 and 801k are linear light-shielding bodies, 802 is a color material, and 823 is transparent. A protective film, 806 is a TFT, 805 is a source line, and 807 is a gate line.

  Note that the color display device of the present embodiment corresponds to the eleventh color display device.

  As shown in FIG. 19, a plurality of linear light shields 801 and 801k are provided on a transparent substrate 810 made of soda glass or the like. The R, G, and B color materials 802 are fixed to the openings 811 between the plurality of linear light shields 801 and 801k in which the surface of the transparent substrate 810 is dug down, thereby forming a color filter. Note that as a material of the transparent substrate 810, fused silica, non-alkali glass, or the like may be used in addition to soda glass. Further, the linear light shields 801 and 801k have a laminated structure of a tantalum nitride film 824 and an n + -m-Si film 813, for example. A transparent protective film 823 made of a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is provided on the linear light shields 801 and 801k and the color material 802, and the linear light shields 801 and 801k and the color material 802 are provided. The level difference between and is flattened.

A TFT 806 is configured including a part of the linear light shield 801 and the transparent protective film 823. That is, the TFT 806 is a bottom gate type pch-TFT, in which the linear light shield 801 also serves as the gate electrode 818, and the transparent protective film 823 located on the linear light shield 801 also serves as the gate insulating film 819. A polycrystalline silicon thin film 817 is formed thereon. A source line 805 and a drain electrode 808 made of a B-Al film are provided on the polycrystalline silicon thin film 817, and a portion in contact with the B-Al film on the polycrystalline silicon thin film 817 becomes a p-type impurity diffusion region, A source region 814 and a drain region 815 are formed, respectively.
Also in the present embodiment, as in the eighth embodiment, there are no contact holes in the terminal portions inside the pixel matrix and outside the pixel matrix, and they are formed at the ends of the gate lines extending outside the pixel matrix. On the gate line terminal, a gate line terminal pad made of the same B-Al film as the source line and drain electrode is directly formed (not shown).

  As described above, FIG. 18 is a plan view showing the configuration of one pixel in the pixel matrix in the color display device. As shown in this figure, a gate line 807 extends in the horizontal direction of the pixel matrix, and a next-stage gate line 822 that also serves as a common electrode line extends in the center of each pixel 821. On the linear light shields 801 and 801k that also serve as the gate lines 807 and 822, a source line 805 of a plurality of TFTs 806 arranged in the vertical direction on the pixel matrix and a substantially rectangular drain electrode 808 are arranged. When the color display device is operated, a voltage for driving the liquid crystal is applied between the drain electrode 808 of the own stage and the gate line 822 of the next stage, and a lateral electric field E is generated.

  In this embodiment mode, the next-stage gate line 822 also serves as a storage capacitor line as well as the common electrode line. The gate-insulation film 819 is opposed to the next-stage gate line 822 and the drain electrode which are opposed to each other. At 808, a storage capacitor unit is configured. Further, in order to prevent light leakage, the source line 805 and the gate line 822 also extend to portions that are not necessary for their original functions, and function as a light shield. That is, the source line 805 shields the opening between the gate line 807 of the own stage and the gate line 822 of the next stage constituting the IPS, and the gate line 822 of the next stage is connected to the source line 805 and the drain electrode. The opening between 808 is shielded from light.

  Hereinafter, a method of manufacturing the color display device having the above configuration will be described with reference to FIGS. FIG. 20 is a process flow chart showing the manufacturing method of the color display device of this embodiment in order. This method corresponds to the eighth manufacturing method, and is an example having three photolithography steps.

  For example, a tantalum nitride film 824 is formed on a transparent substrate 810 made of soda glass by sputtering, and then an n + -m-Si film 813 (semiconductor film) is formed by PECVD (semiconductor film formation). Membrane process). Next, after forming a photoresist pattern for forming a linear light-shielding body on the n + -m-Si film 813 using a well-known photolithography technique (referred to as “BM and gate line formation photo” in FIG. 20), Using the CDE method, the n + -m-Si film 813 and the tantalum nitride film 824 are continuously etched to form linear light shielding bodies 801 and 801k that also serve as the gate lines 807 and 822 (linear light shielding body forming step). Further, the surface of the transparent substrate 810 is dug by wet etching using hydrofluoric acid to form an opening 811 for fixing the color material in the next step. Thereafter, the photoresist pattern is removed.

  Next, using a general inkjet printer, R, G, and B inks are respectively injected into the openings 811 between the plurality of linear light shields 801 and 801k. As the ink used at this time, either pigment-based ink or dye-based ink can be used. Thereafter, the entire substrate is heated to dry the ink, whereby a color material 802 having a flattened surface is formed (color material fixing step).

  Next, a polyimide film (blocking film) is applied on the area where the gate line terminal portion outside the pixel matrix is formed. This polyimide film is a film for preventing the formation of a transparent protective film in the next step in this region (blocking film forming step). Then, an SOG film is formed in a region excluding the region where the polyimide film is formed, and a portion covering the linear light shield 801 is used as a transparent protective film 823 that also serves as the gate insulating film 819 (transparent protective film forming step). Thereafter, an m-Si film is formed on the entire surface by PECVD (semiconductor film forming step), and laser annealing is performed to polycrystallize the m-Si film. Then, the polycrystalline silicon film thus formed is patterned by photolithography and etching to form a polycrystalline silicon thin film 817 (semiconductor layer forming step described as “poly-Si photo” in FIG. 20). .

  Next, after removing the polyimide film (blocking film removing step), a B-Al film is formed on the entire surface by sputtering (conductive film forming step). Then, the source line 805, the drain electrode 808, the gate line terminal pad, and the like are formed by patterning the B-Al film using photolithography and etching (denoted as “source line formation photo” in FIG. 20). Source line / drain electrode forming step). Thereafter, boron diffuses into the portion of the polycrystalline silicon thin film 817 in contact with the B-Al film to form a p-type impurity diffusion region, and a source region 814 and a drain region 815 are formed.

  Also in the method of the present embodiment, as in the eighth embodiment, the linear light-shielding bodies 801 and 801k also serve as the gate lines 807 and 822, so that the photolithography process is performed as compared with the manufacturing method of the first embodiment. Is reduced once, and a photolithography process for forming contact holes is further reduced once by using a polyimide film that prevents the formation of a transparent protective film at the terminal portion in the intermediate process. As a result, it is possible to manufacture a color display device only by three photolithography steps of forming the linear light-shielding bodies 801 and 801k, forming the polycrystalline silicon thin film 817, and forming the source line 805 and the drain electrode 808. It becomes possible. Therefore, also in this embodiment, the same effects as those in the eighth embodiment, such as reduction in manufacturing cost and improvement in product yield, can be achieved.

Note that in this embodiment, the gate line 822 in the next stage serves as both a common electrode line and a storage capacitor line; however, an independent common electrode line and storage capacitor line are provided in the same layer as the gate line. It may be. In addition, when an independent common electrode line is provided, the opening between the source line and the drain electrode is shielded by the common electrode line, or the opening between the gate line and the common electrode line is shielded by the source line. Good. These color display devices correspond to the eleventh color display device.

  The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, all of the above embodiments have been described with reference to the example of the IPS color display device. However, the present invention is not limited to the IPS method, and the photolithography process is increased once compared with the IPS method. A common electrode may be provided to form a vertical electric field type color display device. In addition, specific numerical values such as film thicknesses of various films constituting the color display device, specific manufacturing conditions in each manufacturing process, etc. are not limited to the above embodiment, and it is possible to change the design as appropriate. Of course.

  Further, with respect to the color display devices of all the above embodiments, a counter substrate is disposed so as to face the color display device, and a liquid crystal is sealed between the color display device and the counter substrate, whereby a color liquid crystal device is manufactured. be able to. The color liquid crystal device can be applied to various devices such as a personal computer, a projector, and a viewfinder.

  An electronic device configured using the color display device of the above-described embodiment includes a display information output source 1000, a display information processing circuit 1002, a display driving circuit 1004, a display panel 1006 such as a liquid crystal panel, and a clock generation circuit shown in FIG. 1008 and the power supply circuit 1010 are comprised. The display information output source 1000 is configured to include a memory such as a ROM and a RAM, a tuning circuit that tunes and outputs a television signal, and outputs display information such as a video signal based on the clock from the clock generation circuit 1008. To do. The display information processing circuit 1002 processes display information based on the clock from the clock generation circuit 1008 and outputs it. The display information processing circuit 1002 can include, for example, an amplification / polarity inversion circuit, a phase expansion circuit, a rotation circuit, a gamma correction circuit, or a clamp circuit. The display driving circuit 1004 includes a scanning side driving circuit and a data side driving circuit, and drives the liquid crystal panel 1006 to display. The power supply circuit 1010 supplies power to each of the circuits described above.

  As an electronic apparatus having such a configuration, a liquid crystal projector, a multimedia-compatible personal computer (PC) and engineering workstation (EWS) shown in FIG. 23, a pager shown in FIG. 24, a mobile phone, a word processor, a television, a viewfinder, and the like. Examples include a type or monitor direct-view type video tape recorder, an electronic notebook, an electronic desk calculator, a car navigation device, a POS terminal, and a device equipped with a touch panel.

  A personal computer 1200 shown in FIG. 23 includes a main body 1204 provided with a keyboard 1202 and a liquid crystal display screen 1206.

  A pager 1300 shown in FIG. 24 includes a liquid crystal display substrate 1304, a light guide 1306 provided with a backlight 1306a, a circuit substrate 1308, first and second shield plates 1310 and 1312, and two elastic conductors in a metal frame 1302. It has a body 1314, 1316 and a film carrier tape 1318. Two elastic conductors 1314 and 1316 and a film carrier tape 1318 connect the liquid crystal display substrate 1304 and the circuit substrate 1308.

  Here, the liquid crystal display substrate 1304 is obtained by sealing liquid crystal between two transparent substrates 1304a and 1304b, thereby forming at least a dot matrix type liquid crystal display panel. A driver circuit 1004 shown in FIG. 22 or a display information processing circuit 1002 can be formed on one transparent substrate. The circuit that is not mounted on the liquid crystal display substrate 1304 is an external circuit of the liquid crystal display substrate, and can be mounted on the circuit substrate 1308 in the case of FIG.

  FIG. 24 shows the configuration of the pager, and thus a circuit board 1308 is required in addition to the liquid crystal display board 1304. In the case where a liquid crystal display device is used as one component for electronic equipment, When a display driving circuit or the like is mounted, the minimum unit of the liquid crystal display device is a liquid crystal display substrate 1304. Alternatively, a liquid crystal display substrate 1304 fixed to a metal frame 1302 as a housing can be used as a liquid crystal display device which is a component for electronic equipment. Further, in the case of the backlight type, a liquid crystal display device can be configured by incorporating a liquid crystal display substrate 1304 and a light guide 1306 provided with a backlight 1306a in a metal frame 1302.

  In addition, this invention is not limited to the said Example, A various deformation | transformation implementation is possible within the range of the summary of this invention. For example, the present invention can be applied not only to driving the above-described various liquid crystal panels but also to electroluminescence and plasma display devices.

  As described above in detail, according to the present invention, a color filter and a TFT are formed on a single transparent substrate, and the linear light-shielding body of the color filter also serves as a source line and a gate line. Therefore, the number of photolithography processes during the manufacturing process can be greatly reduced to 3 to 5 times compared to the conventional manufacturing method that requires a total of about 9 to 10 photolithography processes. As a result, the manufacturing cost of the color liquid crystal device can be greatly reduced, and the yield of products can be improved.

It is a top view which shows the pixel of the color display apparatus which is the 1st Embodiment of this invention. It is sectional drawing which follows the AA line of FIG. It is a process flow figure showing a manufacturing method of a color display same as the above. It is a top view which shows the pixel of the color display apparatus which is the 2nd Embodiment of this invention. It is sectional drawing of the color display apparatus which is the 4th Embodiment of this invention. It is a top view which shows the pixel of the color display apparatus which is the 5th Embodiment of this invention. It is sectional drawing of FIG. It is a process flow figure showing a manufacturing method of a color display same as the above. It is a top view which shows the pixel of the color display apparatus which is the 6th Embodiment of this invention. It is a top view which shows the terminal part of a color display apparatus similarly. FIG. 10 is a cross-sectional view of FIG. 9. It is a process flow figure showing a manufacturing method of a color display same as the above. It is a top view which shows the pixel of the color display apparatus which is the 3rd and 7th embodiment of this invention. It is sectional drawing of FIG. It is a top view which shows the pixel of the color display apparatus which is the 8th Embodiment of this invention. It is sectional drawing of FIG. It is a process flow figure showing a manufacturing method of a color display same as the above. It is a top view which shows the pixel of the color display apparatus which is the 9th Embodiment of this invention. It is sectional drawing of FIG. It is a process flow figure showing a manufacturing method of a color display same as the above. It is sectional drawing which shows the conventional color liquid crystal device of (a) vertical electric field system and (b) horizontal electric field system (IPS system). It is a figure which shows the electronic device using the color display apparatus of this invention. It is a figure which shows the personal computer using the color display apparatus of this invention. It is a figure which shows the pager using the color display apparatus of this invention.

Explanation of symbols

  101, 201, 301, 301k, 401, 401k, 501, 501k, 601, 701, 701k, 801, 801k ... linear shading bodies, 102, 302, 402, 502, 602, 702, 802 ... color materials, 103, 323, 423, 523, 603, 723, 823 ... transparent protective film, 104, 604 ... embedded transparent protective film, 105, 205, 205a, 305, 405, 505, 605, 705, 805 ... source line, 106, 206 , 306, 406, 506, 606, 706, 806 ... Thin film transistor, 107, 207, 307, 407, 507, 607, 707, 807 ... Gate line, 108, 208, 308, 408, 508, 608, 708, 808 ... Drain electrode, 109, 309, 509 ... Common electrode line, 110, 310, 410 510, 610, 710, 810 ... transparent substrate, 111, 211, 311, 411, 511, 711, 711, 811 ... opening, 113, 413, 513, 613, 713, 813 ... n + -m-Si film (source 114, 314, 414, 514, 614, 714, 814 ... source region, 115, 315, 415, 515, 615, 715, 815 ... drain region, 117, 317, 417, 517, 617, 717, 817 ... silicon thin film (semiconductor layer), 118, 218, 318, 418, 518, 618, 718, 818 ... gate electrode, 120, 420, 528, 529 ... contact hole, 121, 221, 421, 521, 621 , 721, 821... Pixels, 222, 422, 622, 722, 822... 33,233A ... storage capacitor portion, 424,524,724,824 ... tantalum nitride film (conductive film), 526 ... gate line terminal, 531 ... gate line terminal pads.

Claims (18)

In a color liquid crystal display device sandwiching liquid crystal between a pair of substrates,
One substrate of the pair of substrates is a transparent substrate, and a plurality of linear light shields on the transparent substrate;
A color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, a source line, a common electrode line, a gate line, and a thin film transistor are formed,
The thin film transistor is provided on the linear light shield,
The thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a gate electrode, the source line is connected to the source region, and the drain electrode is connected to the drain region, The gate line extends to the gate electrode;
The source line and the common electrode line are formed on the same layer with the same material,
A portion of the gate insulating film is removed to connect the drain region and the drain electrode;
The drain electrode and the gate line are formed on the same layer with the same material,
A color liquid crystal display device, wherein a liquid crystal is driven by applying a voltage between the drain electrode and the common electrode line. The source region is in contact with the source side impurity diffusion source, and the drain region is in contact with the drain side impurity diffusion source,
The color liquid crystal display device according to claim 1, wherein the source-side impurity diffusion source constitutes at least a part of the source line. Color liquid crystal display device according to claim 1 or 2, characterized in that said gate lines are formed above the semiconductor layer through the gate insulating film. In a color liquid crystal display device sandwiching liquid crystal between a pair of substrates,
One substrate of the pair of substrates is a transparent substrate, and a plurality of linear light shields on the transparent substrate;
A color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, a source line, a common electrode line, a gate line, and a thin film transistor are formed,
The thin film transistor is provided on the linear light shield,
The thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a gate electrode, the source line is connected to the source region, and the drain electrode is connected to the drain region, The gate line extends to the gate electrode;
A portion of the gate insulating film is removed to connect the drain region and the drain electrode;
The drain electrode, the gate line, and the common electrode line are formed on the same layer with the same material,
A color liquid crystal display device, wherein a liquid crystal is driven by applying a voltage between the drain electrode and the common electrode line. 5. The color liquid crystal display device according to claim 4, wherein the common electrode also serves as a gate line for the next stage. In a color liquid crystal display device sandwiching liquid crystal between a pair of substrates,
One substrate of the pair of substrates is a transparent substrate, and a plurality of linear light shields on the transparent substrate;
A color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, a source line, a gate line, a thin film transistor, and a storage capacitor portion are formed,
The thin film transistor is provided on the linear light shield,
The thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a gate electrode, the source line is connected to the source region, and the drain electrode is connected to the drain region, The gate line extends to the gate electrode;
The gate line is formed above the semiconductor layer via the gate insulating film, and the drain electrode is formed of the same layer as the gate line,
The color liquid crystal display device, wherein the storage capacitor portion is constituted by the source line, the gate insulating film, and the drain electrode. In a color liquid crystal display device sandwiching liquid crystal between a pair of substrates,
One substrate of the pair of substrates is a transparent substrate, and a plurality of linear light shields on the transparent substrate;
A color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, a source line, a common electrode line, a gate line, and a thin film transistor are formed,
The thin film transistor is provided on the linear light shield,
The thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a gate electrode, the source line is connected to the source region, and the drain electrode is connected to the drain region, The gate line extends to the gate electrode;
The drain electrode and the source line are formed on the same layer with the same material,
The gate line and the common electrode line are formed on the same layer with the same material,
A color liquid crystal display device, wherein a liquid crystal is driven by applying a voltage between the drain electrode and the common electrode line. 8. The color liquid crystal display device according to claim 7 , wherein the common electrode line also serves as a gate line for the next stage. Color liquid crystal display device according to claim 7 or 8 on the source terminal provided on an end portion of the source line is characterized in that not the gate insulating film is formed. In a color liquid crystal display device sandwiching liquid crystal between a pair of substrates,
One substrate of the pair of substrates is a transparent substrate, and a plurality of linear light shields on the transparent substrate;
A color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, a source line, a common electrode line, a gate line, and a thin film transistor are formed,
The thin film transistor is provided on the linear light shield,
The thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a gate electrode, the source line is connected to the source region, and the drain electrode is connected to the drain region, The gate line extends to the gate electrode;
The gate line and the common electrode line are formed on the same layer with the same material,
The drain electrode and the source line are formed on the same layer with the same material,
The semiconductor layer is formed above the gate line through the gate insulating film;
A color liquid crystal display device, wherein a liquid crystal is driven by applying a voltage between the drain electrode and the common electrode line.   The color liquid crystal display device according to claim 10, wherein the source line is made of a metal containing boron. In a color liquid crystal display device sandwiching liquid crystal between a pair of substrates,
One substrate of the pair of substrates is a transparent substrate, a plurality of linear light shields on the transparent substrate, a color material fixed in an opening between the plurality of linear light shields, and the color material A transparent protective film covering the
A source line, a gate line, and a thin film transistor are formed,
The thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a gate electrode, the source line is connected to the source region, and the drain electrode is connected to the drain region, The gate line extends to the gate electrode;
The linear light shield is formed of a conductive film, and also serves as the source line,
A color liquid crystal display device, wherein the gate line is formed above the semiconductor layer through the gate insulating film. In a color liquid crystal display device sandwiching liquid crystal between a pair of substrates,
One substrate of the pair of substrates is a transparent substrate, and a plurality of linear light shields on the transparent substrate;
A color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, a source line, a common electrode line, a gate line, and a thin film transistor are formed,
The thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a gate electrode, the source line is connected to the source region, and the drain electrode is connected to the drain region, The gate line extends to the gate electrode;
The linear light shield is formed of a conductive film, and also serves as the source line,
The gate line is formed above the semiconductor layer via the gate insulating film;
A part of the gate insulating film is removed to connect the drain region and the drain electrode;
The drain electrode, the gate line, and the common electrode line are formed on the same layer with the same material,
A color liquid crystal display device, wherein a liquid crystal is driven by applying a voltage between the drain electrode and the common electrode line. 14. The color liquid crystal display device according to claim 13, wherein the common electrode line also serves as a gate line for the next stage. Color liquid crystal display device according to any one of claims 12 to 14 on the source terminal provided at an end of said source line, characterized in that not the gate insulating film is formed. In a color liquid crystal display device sandwiching liquid crystal between a pair of substrates,
One substrate of the pair of substrates is a transparent substrate, a plurality of linear light shields on the transparent substrate, a color material fixed in an opening between the plurality of linear light shields, and the color material A transparent protective film covering the
A source line, a gate line, and a thin film transistor are formed,
The thin film transistor is provided on the linear light shield,
The thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a gate electrode, the source line is connected to the source region, and the drain electrode is connected to the drain region, The gate line extends to the gate electrode;
The linear light shield is formed of a conductive film, and also serves as the gate line,
The transparent protective film also serves as the gate insulating film,
A color liquid crystal display device, wherein the semiconductor layer is formed above a linear light-shielding body that also serves as the gate line through the gate insulating film A common electrode line is formed on the transparent substrate,
The common electrode line and the gate line are formed on the same layer with the same material,
17. The color liquid crystal display device according to claim 16, wherein the liquid crystal is driven by applying a voltage between the drain electrode and the common electrode line. Color liquid crystal display device according to claim 16 or 17 on the gate terminal provided at an end of the gate line is characterized in that not the gate insulating film is formed.

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