JP4697476B2 - Liquid epoxy resin composition and flip chip type semiconductor device - Google Patents

Liquid epoxy resin composition and flip chip type semiconductor device Download PDF

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JP4697476B2
JP4697476B2 JP2007165973A JP2007165973A JP4697476B2 JP 4697476 B2 JP4697476 B2 JP 4697476B2 JP 2007165973 A JP2007165973 A JP 2007165973A JP 2007165973 A JP2007165973 A JP 2007165973A JP 4697476 B2 JP4697476 B2 JP 4697476B2
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epoxy resin
liquid epoxy
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aromatic amine
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JP2007291407A (en
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和昌 隅田
利夫 塩原
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Shin Etsu Chemical Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83909Post-treatment of the layer connector or bonding area
    • H01L2224/83951Forming additional members, e.g. for reinforcing, fillet sealant
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01018Argon [Ar]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01077Iridium [Ir]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]

Description

本発明は、半導体、特にフリップチップ型半導体装置の封止用として粘度が低く、作業性が非常に好適で、シリコンチップの素子表面(特に感光性ポリイミド、窒化膜、酸化膜)との密着性が非常に良好であり、耐湿性の高い硬化物を与え、特にリフロー温度260℃以上の高温熱衝撃に対して優れた封止材となり得る液状エポキシ樹脂組成物、及びこの組成物の硬化物にて封止されたフリップチップ型半導体装置に関する。   INDUSTRIAL APPLICABILITY The present invention has a low viscosity for sealing semiconductors, particularly flip-chip type semiconductor devices, and is very suitable for workability. Is a liquid epoxy resin composition that gives a cured product with very good moisture resistance and can be an excellent sealing material against a high-temperature thermal shock particularly at a reflow temperature of 260 ° C. or higher, and a cured product of this composition The present invention relates to a flip-chip type semiconductor device that is sealed.

電気機器の小型化、軽量化、高機能化に伴い、半導体の実装方法もピン挿入タイプから表面実装が主流になっている。また、半導体素子の高集積化に伴い、ダイサイズの一辺が10mmを超えるものもあり、ダイサイズの大型化が進んできている。このような大型ダイを用いた半導体装置では、半田リフロー時にダイと封止材にかかる応力が増大し、封止材とダイ及び基板の界面で剥離が生じたり、基板実装時にパッケージにクラックが入るといった問題がクローズアップされてきている。   Along with the downsizing, weight reduction, and higher functionality of electrical equipment, semiconductor mounting methods have become mainstream from pin insertion type to surface mounting. In addition, along with the high integration of semiconductor elements, there are cases in which one side of the die size exceeds 10 mm, and the die size is increasing. In a semiconductor device using such a large die, the stress applied to the die and the sealing material increases during solder reflow, and peeling occurs at the interface between the sealing material and the die and the substrate, or the package cracks when mounted on the substrate. These issues have been highlighted.

更に、近い将来に鉛含有半田が使用できなくなることから、鉛代替半田が多数開発されている。この種の半田は、溶融温度が鉛含有の半田より高くなることから、リフローの温度も260〜270℃で検討されており、従来の液状エポキシ樹脂組成物の封止材では、より一層の不良が予想される。このようにリフローの温度が高くなると、従来においては何ら問題のなかったフリップチップ型のパッケージもリフロー時にクラックが発生したり、チップ界面、基板界面との剥離が発生したり、その後の冷熱サイクルが数百回以上経過すると樹脂又は基板、チップ、バンプ部にクラックが発生するという重大な問題が起こるようになった。   Furthermore, since lead-containing solder cannot be used in the near future, a number of lead substitute solders have been developed. Since this type of solder has a melting temperature higher than that of lead-containing solder, the reflow temperature is also examined at 260 to 270 ° C., and the conventional liquid epoxy resin composition sealing material is even more defective. Is expected. Thus, when the reflow temperature becomes high, the flip chip type package, which has not had any problems in the prior art, also generates cracks during reflow, separation from the chip interface and the substrate interface, and subsequent cooling cycles. When several hundred times or more have passed, a serious problem that a crack occurs in a resin, a substrate, a chip, or a bump portion has come to occur.

また、高集積化が進むにつれて、フリップチップ型半導体装置において、バンプ間ピッチが狭くなり、注入性が悪くなるといった問題が起こるようになってきた。   Further, with the progress of high integration, there has been a problem in the flip chip type semiconductor device that the pitch between the bumps becomes narrow and the injectability becomes worse.

なお、この発明に関連する先行技術文献としては、下記のものがある。   As prior art documents related to the present invention, there are the following.

特開平10−158366号公報JP-A-10-158366 特開平10−231351号公報JP-A-10-231351 特開2000−327884号公報JP 2000-327884 A 特開2001−055486号公報Japanese Patent Laid-Open No. 2001-055486 特開2001−055487号公報JP 2001-055487 A 特開2001−055488号公報JP 2001-055488 A

本発明は、上記事情に鑑みなされたもので、シリコンチップの表面、特に感光性ポリイミド樹脂や窒化膜との密着性に優れ、かつ強靭性に優れた硬化物を与え、リフローの温度が従来温度240℃付近から260〜270℃に上昇しても不良が発生せず、更にPCT(121℃/2.1atm)などの高温多湿の条件下でも劣化せず、−65℃/150℃の温度サイクルにおいて数百サイクルを超えても剥離、クラックが発生しない半導体装置の封止材となり得る液状エポキシ樹脂組成物、及びこの組成物の硬化物で封止されたフリップチップ型半導体装置を提供することを目的とする。   The present invention has been made in view of the above circumstances, and provides a cured product having excellent adhesion to the surface of a silicon chip, particularly a photosensitive polyimide resin or a nitride film, and excellent toughness, and the reflow temperature is the conventional temperature. Even if the temperature rises from around 240 ° C to 260-270 ° C, no defects occur, and it does not deteriorate even under high temperature and high humidity conditions such as PCT (121 ° C / 2.1 atm), and the temperature cycle is -65 ° C / 150 ° C. The present invention provides a liquid epoxy resin composition that can be used as a sealing material for a semiconductor device in which peeling and cracking do not occur even if it exceeds several hundred cycles, and a flip chip type semiconductor device sealed with a cured product of this composition. Objective.

本発明者は、上記目的を達成するために鋭意検討を重ねた結果、(A)液状エポキシ樹脂、(B)芳香族アミン系硬化剤、及び(C)無機質充填剤を含有する液状エポキシ樹脂組成物であって、(A)液状エポキシ樹脂として、下記構造式(4)又は(5)で示されるエポキシ樹脂を、特に下記構造式(5)で示されるエポキシ樹脂を全エポキシ樹脂中25重量%以上を含み、(B)芳香族アミン系硬化剤として、下記一般式(1)で表される芳香族アミン化合物を硬化剤全体の5重量%以上含むものを用いることにより、低粘度で作業性に優れており、シリコンチップの表面、特に感光性ポリイミド樹脂や窒化膜、とりわけ窒化膜との密着性に優れ、PCT(120℃/2.1atm)などの高温多湿の条件下でも劣化せず、熱衝撃に対して優れており、特に大型ダイサイズの半導体装置の封止材として有効であることを知見した。   As a result of intensive studies to achieve the above object, the present inventor has obtained a liquid epoxy resin composition containing (A) a liquid epoxy resin, (B) an aromatic amine-based curing agent, and (C) an inorganic filler. (A) As a liquid epoxy resin, an epoxy resin represented by the following structural formula (4) or (5), particularly an epoxy resin represented by the following structural formula (5) is 25% by weight in the total epoxy resin By using an aromatic amine compound containing 5% by weight or more of the aromatic amine compound represented by the following general formula (1) as the aromatic amine-based curing agent, the viscosity is low and the workability is low. Excellent adhesion to the surface of the silicon chip, especially photosensitive polyimide resin and nitride film, especially nitride film, and does not deteriorate even under high temperature and high humidity conditions such as PCT (120 ° C / 2.1 atm), Against thermal shock Excellent was found that particularly effective as a sealing material for a semiconductor device of a large die size.

Figure 0004697476
(式中、R8は水素原子、又は炭素数1〜20の一価炭化水素基である。また、xは1〜4の整数である。)
Figure 0004697476
(In the formula, R 8 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. X is an integer of 1 to 4.)

Figure 0004697476
(式中、R1〜R3は独立に炭素数1〜6の一価炭化水素基、CH3S−及びC25S−から選ばれる基である。)
Figure 0004697476
(In the formula, R 1 to R 3 are groups independently selected from a monovalent hydrocarbon group having 1 to 6 carbon atoms, CH 3 S— and C 2 H 5 S—.)

即ち、上記一般式(1)で表される芳香族アミン系硬化剤は、従来の芳香族アミン系硬化剤に比べ、特定な置換基を持つことにより、比較的早く熱硬化するにもかかわらず、ポットライフが長く、硬化物の機械特性、電気特性、耐熱特性、耐薬品特性に優れるものであり、この硬化剤を用いることによって、シリコンチップの表面、特に感光性ポリイミド樹脂や窒化膜との密着性に優れ、かつ熱衝撃性が著しく向上し、高温多湿下でも優れた特性を得ることが可能となることを見出した。   That is, the aromatic amine-based curing agent represented by the general formula (1) has a specific substituent compared to the conventional aromatic amine-based curing agent, so that it is cured relatively quickly. It has a long pot life and is excellent in mechanical properties, electrical properties, heat resistance properties and chemical resistance properties of the cured product. By using this curing agent, the surface of the silicon chip, particularly with the photosensitive polyimide resin or nitride film, It has been found that the adhesiveness is excellent, the thermal shock resistance is remarkably improved, and excellent characteristics can be obtained even under high temperature and high humidity.

更に、本発明の芳香族アミン系硬化剤は、従来の芳香族アミン系硬化剤に比べ、粘度が低いために組成物の低粘度化が可能となり、特に狭ギャップフリップチップ型半導体装置において、注入時及び硬化時にボイドが発生することがないために作業性が向上し、更に大型ダイサイズの半導体装置の封止材としても有効となり得ることを見出し、本発明をなすに至ったものである。   Furthermore, since the aromatic amine curing agent of the present invention has a lower viscosity than the conventional aromatic amine curing agent, the viscosity of the composition can be lowered. In particular, in the narrow gap flip chip type semiconductor device, the injection is possible. It has been found that workability is improved because no voids are generated at the time and during curing, and that it can be effectively used as a sealing material for a semiconductor device having a large die size, and the present invention has been made.

従って、本発明は、
(A)1分子内に3官能基以下のエポキシ基を含有する常温で液状の液状エポキシ樹脂であって、記構造式(4)又は(5)で示されるエポキシ樹脂を含む液状エポキシ樹脂

Figure 0004697476
(式中、R 8 は水素原子、又は炭素数1〜20の一価炭化水素基である。また、xは1〜4の整数である。)
(B)記一般式(1)で表される芳香族アミン化合物を5重量%以上含有する芳香族アミン系硬化剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤との配合モル比[(A)/(B)]が、0.7以上1.2以下である量
Figure 0004697476
(式中、R 1 〜R 3 は独立に炭素数1〜6の一価炭化水素基、CH 3 S−及びC 2 5 S−から選ばれる基である。)
(C)無機質充填剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤の合計量100重量部に対して50〜500重量部
を含有し、更に沸点が130℃以上250℃以下の有機溶剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤の合計量100重量部に対して0.5〜10重量部含有することを特徴とする液状エポキシ樹脂組成物
及び
(A)1分子内に3官能基以下のエポキシ基を含有する常温で液状の液状エポキシ樹脂であって、下記構造式(5)で示されるエポキシ樹脂を全エポキシ樹脂中25重量%以上含む液状エポキシ樹脂
Figure 0004697476
(式中、R 8 は水素原子、又は炭素数1〜20の一価炭化水素基である。また、xは1〜4の整数である。)
(B)下記一般式(1)で表される芳香族アミン化合物を5重量%以上含有する芳香族アミン系硬化剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤との配合モル比[(A)/(B)]が、0.7以上1.2以下である量
Figure 0004697476
(式中、R 1 〜R 3 は独立に炭素数1〜6の一価炭化水素基、CH 3 S−及びC 2 5 S−から選ばれる基である。)
(C)無機質充填剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤の合計量100重量部に対して50〜500重量部
を含有することを特徴とする液状エポキシ樹脂組成物
を提供する。 Therefore, the present invention
(A) 1 contains 3 or less epoxy functional groups in the molecule a liquid epoxy resin that is liquid at room temperature, liquid epoxy resin containing an epoxy resin represented by the following Symbol structural formula (4) or (5)
Figure 0004697476
(In the formula, R 8 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. X is an integer of 1 to 4.)
(B) under following general formula (1) an aromatic amine curing agent containing an aromatic amine compound 5 wt% or more represented by (A) of a liquid epoxy resin and (B) an aromatic amine curing agent The amount that the blending molar ratio [(A) / (B)] is 0.7 or more and 1.2 or less
Figure 0004697476
(In the formula, R 1 to R 3 are groups independently selected from a monovalent hydrocarbon group having 1 to 6 carbon atoms, CH 3 S— and C 2 H 5 S—.)
(C) The inorganic filler contains 50 to 500 parts by weight with respect to 100 parts by weight of the total amount of (A) liquid epoxy resin and (B) aromatic amine curing agent , and further has a boiling point of 130 ° C to 250 ° C. A liquid epoxy resin composition comprising 0.5 to 10 parts by weight of the organic solvent (A) with respect to 100 parts by weight of the total amount of (A) liquid epoxy resin and (B) aromatic amine curing agent ,
as well as
(A) A liquid epoxy resin that is liquid at room temperature and contains an epoxy group having three or less functional groups in one molecule, and includes 25% by weight or more of the epoxy resin represented by the following structural formula (5) in the total epoxy resin Epoxy resin
Figure 0004697476
(In the formula, R 8 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. X is an integer of 1 to 4.)
(B) An aromatic amine curing agent containing 5% by weight or more of an aromatic amine compound represented by the following general formula (1) is blended with (A) a liquid epoxy resin and (B) an aromatic amine curing agent. Amount in which the molar ratio [(A) / (B)] is 0.7 or more and 1.2 or less
Figure 0004697476
(In the formula, R 1 to R 3 are groups independently selected from a monovalent hydrocarbon group having 1 to 6 carbon atoms, CH 3 S— and C 2 H 5 S—.)
(C) The inorganic filler is 50 to 500 parts by weight with respect to 100 parts by weight of the total amount of (A) liquid epoxy resin and (B) aromatic amine curing agent.
A liquid epoxy resin composition comprising:

本発明は、上記液状エポキシ樹脂組成物に加え、この液状エポキシ樹脂組成物の硬化物をアンダーフィル材として封止したフリップチップ型半導体装置を提供する。   The present invention provides a flip chip type semiconductor device in which, in addition to the liquid epoxy resin composition, a cured product of the liquid epoxy resin composition is sealed as an underfill material.

本発明の液状エポキシ樹脂組成物は、粘度が低く、作業性に優れており、シリコンチップの表面、特に感光性ポリイミド樹脂や窒化膜との密着性に優れた硬化物を与え、吸湿後のリフローの温度が従来温度240℃付近から260〜270℃に上昇しても不良が発生せず、更にPCT(120℃/2.1atm)などの高温多湿の条件下でも劣化せず、−65℃/150℃の温度サイクルにおいて数百サイクルを超えても剥離、クラックが起こらない半導体装置を提供することができる。   The liquid epoxy resin composition of the present invention has a low viscosity, excellent workability, gives a cured product with excellent adhesion to the surface of a silicon chip, particularly a photosensitive polyimide resin and a nitride film, and reflow after moisture absorption Even if the temperature of the conventional material rises from about 240 ° C. to about 260 to 270 ° C., no defects occur, and it does not deteriorate even under high temperature and high humidity conditions such as PCT (120 ° C./2.1 atm). It is possible to provide a semiconductor device in which peeling and cracking do not occur even when the temperature cycle of 150 ° C. exceeds several hundred cycles.

以下、本発明につき更に詳しく説明する。
本発明の液状エポキシ樹脂組成物において、液状エポキシ樹脂(A)は、1分子内に3官能基以下のエポキシ基を含有する常温で液状のエポキシ樹脂であればいかなるものでも使用可能であるが、25℃における粘度が2,000ポイズ以下、特に500ポイズ以下のものが好ましく、具体的には、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂等のビスフェノール型エポキシ樹脂、ナフタレン型エポキシ樹脂、フェニルグリシジルエーテルなどが挙げられ、この中で室温で液状のエポキシ樹脂を使用する。
Hereinafter, the present invention will be described in more detail.
In the liquid epoxy resin composition of the present invention, any liquid epoxy resin (A) can be used as long as it is a liquid epoxy resin at room temperature containing an epoxy group having three or less functional groups in one molecule, Those having a viscosity at 25 ° C. of 2,000 poises or less, particularly 500 poises or less are preferable. Specifically, bisphenol type epoxy resins such as bisphenol A type epoxy resins and bisphenol F type epoxy resins, naphthalene type epoxy resins, phenylglycidyl An ether etc. are mentioned, In this, a liquid epoxy resin is used at room temperature.

また、本発明のエポキシ樹脂は、下記構造式(4),(5)で示されるエポキシ樹脂を侵入性に影響を及ぼさない範囲で含有していてもよい。

Figure 0004697476
Moreover, the epoxy resin of this invention may contain the epoxy resin shown by following Structural formula (4), (5) in the range which does not affect intrusion property.
Figure 0004697476

ここで、R8は水素原子、又は炭素数1〜20、好ましくは1〜10、更に好ましくは1〜3の一価炭化水素基であり、一価炭化水素基としては、メチル基、エチル基、プロピル基等のアルキル基、ビニル基、アリル基等のアルケニル基等が挙げられる。また、xは1〜4の整数、特に1又は2である。 Here, R 8 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms, more preferably 1 to 3 carbon atoms, and examples of the monovalent hydrocarbon group include a methyl group and an ethyl group. And alkyl groups such as propyl group, alkenyl groups such as vinyl group and allyl group. X is an integer of 1 to 4, particularly 1 or 2.

なお、上記式(5)で示されるエポキシ樹脂を配合する場合、その配合量は、全エポキシ樹脂中25重量%以上、より好ましくは50重量%以上、更に好ましくは75重量%以上であることが推奨される。25重量%未満であると組成物の粘度が上昇したり、硬化物の耐熱性が低下したりするおそれがある。なお、その上限は100重量%でもよい。
上記一般式(5)で示されるエポキシ樹脂の例としては、日本化薬社製RE600NM等が挙げられる。
In addition, when mix | blending the epoxy resin shown by the said Formula (5), the compounding quantity is 25 weight% or more in all the epoxy resins, More preferably, it is 50 weight% or more, More preferably, it is 75 weight% or more. Recommended. If it is less than 25% by weight, the viscosity of the composition may increase or the heat resistance of the cured product may decrease. The upper limit may be 100% by weight.
Examples of the epoxy resin represented by the general formula (5) include RE600NM manufactured by Nippon Kayaku Co., Ltd.

上記液状エポキシ樹脂中の全塩素含有量は、1,500ppm以下、望ましくは1,000ppm以下であることが好ましい。また、100℃で50%エポキシ樹脂濃度における20時間での抽出水塩素が10ppm以下であることが好ましい。全塩素含有量が1,500ppmを超え、又は抽出水塩素が10ppmを超えると半導体素子の信頼性、特に耐湿性に悪影響を与えるおそれがある。   The total chlorine content in the liquid epoxy resin is preferably 1,500 ppm or less, more preferably 1,000 ppm or less. Moreover, it is preferable that the extraction water chlorine in 20 hours in the 50% epoxy resin density | concentration at 100 degreeC is 10 ppm or less. If the total chlorine content exceeds 1,500 ppm or the extracted water chlorine exceeds 10 ppm, the reliability of the semiconductor element, particularly the moisture resistance, may be adversely affected.

次に、本発明に使用する芳香族アミン系硬化剤(B)は、下記一般式(1)で表される芳香族アミン化合物を全芳香族アミン系硬化剤中に5重量%以上含有するものである。   Next, the aromatic amine curing agent (B) used in the present invention contains an aromatic amine compound represented by the following general formula (1) in a total aromatic amine curing agent in an amount of 5% by weight or more. It is.

Figure 0004697476
(式中、R1〜R3は独立に炭素数1〜6の一価炭化水素基、CH3S−及びC25S−から選ばれる基である。)
Figure 0004697476
(In the formula, R 1 to R 3 are groups independently selected from a monovalent hydrocarbon group having 1 to 6 carbon atoms, CH 3 S— and C 2 H 5 S—.)

ここで、R1〜R3の一価炭化水素基としては、炭素数1〜6、特に1〜3のものが好ましく、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert−ブチル基、ヘキシル基等のアルキル基、ビニル基、アリル基、プロペニル基、ブテニル基、ヘキセニル基等のアルケニル基、フェニル基などや、これらの炭化水素基の水素原子の一部又は全部を塩素、フッ素、臭素等のハロゲン原子で置換したフロロメチル基、ブロモエチル基、トリフルオロプロピル基等のハロゲン置換一価炭化水素基などを挙げることができる。 Here, the monovalent hydrocarbon group of R 1 to R 3 is preferably a group having 1 to 6 carbon atoms, particularly 1 to 3 carbon atoms, and preferably a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, Alkyl groups such as tert-butyl group and hexyl group, vinyl groups, allyl groups, propenyl groups, butenyl groups, alkenyl groups such as hexenyl groups, phenyl groups, etc., and some or all of hydrogen atoms of these hydrocarbon groups And halogen-substituted monovalent hydrocarbon groups such as a fluoromethyl group, a bromoethyl group, and a trifluoropropyl group substituted with a halogen atom such as chlorine, fluorine, and bromine.

一般式(1)で表される芳香族アミン化合物として、具体的には、ジエチルトルエンジアミン、ジメチルチオトルエンジアミン、ジメチルトルエンジアミンなどが挙げられる。   Specific examples of the aromatic amine compound represented by the general formula (1) include diethyltoluenediamine, dimethylthiotoluenediamine, and dimethyltoluenediamine.

上記一般式(1)で表される芳香族アミン化合物の配合量は、芳香族アミン系硬化剤全体の5重量%以上、好ましくは10〜100重量%、より好ましくは20〜100重量%である。一般式(1)で表される芳香族アミン化合物が、硬化剤全体の5重量%未満であると、粘度が上昇したり、接着力が低下したり、クラックが発生したりする。   The amount of the aromatic amine compound represented by the general formula (1) is 5% by weight or more, preferably 10 to 100% by weight, more preferably 20 to 100% by weight, based on the whole aromatic amine-based curing agent. . When the aromatic amine compound represented by the general formula (1) is less than 5% by weight of the entire curing agent, the viscosity increases, the adhesive strength decreases, or cracks occur.

また、上記芳香族アミン化合物以外の硬化剤としては、芳香族ジアミノジフェニルメタン化合物、例えば、3,3’−ジエチル−4,4’−ジアミノフェニルメタン、3,3’,5,5’−テトラメチル−4,4’−ジアミノフェニルメタン、3,3’,5,5’−テトラエチル−4,4’−ジアミノフェニルメタン、2,4−ジアミノトルエン、1,4−ジアミノベンゼン、1,3−ジアミノベンゼン等の芳香族アミンであることが好ましい。   Examples of the curing agent other than the aromatic amine compound include aromatic diaminodiphenylmethane compounds such as 3,3′-diethyl-4,4′-diaminophenylmethane, 3,3 ′, 5,5′-tetramethyl. -4,4'-diaminophenylmethane, 3,3 ', 5,5'-tetraethyl-4,4'-diaminophenylmethane, 2,4-diaminotoluene, 1,4-diaminobenzene, 1,3-diamino An aromatic amine such as benzene is preferred.

上記芳香族アミン系硬化剤の中で、常温で液体のものは、そのまま配合しても問題ないが、固体のものは、そのまま配合すると樹脂粘度が上昇し、作業性が著しく悪くなるため、予めエポキシ樹脂と溶融混合することが好ましく、後述する指定の配合割合で、70〜150℃の温度範囲で1〜2時間溶融混合することが望ましい。混合温度が70℃未満であると芳香族アミン系硬化剤が十分に相溶しないおそれがあり、150℃を超える温度であるとエポキシ樹脂と反応して粘度上昇するおそれがある。また、混合時間が1時間未満であると芳香族アミン系硬化剤が十分に相溶せず、粘度上昇を招くおそれがあり、2時間を超えるとエポキシ樹脂と反応し、粘度上昇するおそれがある。   Among the aromatic amine-based curing agents, those which are liquid at room temperature can be blended as they are, but if they are blended as they are, the viscosity of the resin increases and workability becomes significantly worse. It is preferable to melt and mix with an epoxy resin, and it is desirable to melt and mix in a temperature range of 70 to 150 ° C. for 1 to 2 hours at a specified blending ratio described later. If the mixing temperature is less than 70 ° C., the aromatic amine curing agent may not be sufficiently compatible, and if the mixing temperature exceeds 150 ° C., it may react with the epoxy resin and increase the viscosity. Also, if the mixing time is less than 1 hour, the aromatic amine curing agent is not sufficiently compatible and may increase the viscosity, and if it exceeds 2 hours, it may react with the epoxy resin and increase the viscosity. .

なお、本発明に用いられる芳香族アミン系硬化剤の総配合量は、液状エポキシ樹脂と芳香族アミン系硬化剤との配合モル比[(A)液状エポキシ樹脂/(B)芳香族アミン系硬化剤]が0.7以上1.2以下、好ましくは0.7以上1.1以下、更に好ましくは0.85以上1.05以下の範囲であることが推奨される。配合モル比が0.7未満では未反応のアミノ基が残存し、ガラス転移温度が低下、また密着性が低下するおそれがある。逆に1.2を超えると硬化物が硬く脆くなり、リフロー時又は温度サイクル時にクラックが発生するおそれがある。   The total blending amount of the aromatic amine curing agent used in the present invention is the molar ratio of the liquid epoxy resin and the aromatic amine curing agent [(A) liquid epoxy resin / (B) aromatic amine curing. It is recommended that the agent is in the range of 0.7 to 1.2, preferably 0.7 to 1.1, and more preferably 0.85 to 1.05. If the blending molar ratio is less than 0.7, unreacted amino groups remain, and the glass transition temperature may be lowered and the adhesion may be lowered. On the other hand, if it exceeds 1.2, the cured product becomes hard and brittle, and cracks may occur during reflow or temperature cycling.

一方、本発明に用いられる無機質充填剤(C)は、膨張係数を小さくする目的から、従来より知られている各種の無機質充填剤を添加することができる。無機質充填剤として、具体的には、溶融シリカ、結晶シリカ、アルミナ、ボロンナイトライド、チッカアルミ、チッカ珪素、マグネシア、マグネシウムシリケート、アルミニウムなどが挙げられる。中でも真球状の溶融シリカが低粘度化のため望ましい。なお、これらの無機質充填剤は、シランカップリング剤等で表面処理されたものであってもよいが、表面処理なしでも使用できる。   On the other hand, various inorganic fillers conventionally known can be added to the inorganic filler (C) used in the present invention for the purpose of reducing the expansion coefficient. Specific examples of the inorganic filler include fused silica, crystalline silica, alumina, boron nitride, ticker aluminum, ticker silicon, magnesia, magnesium silicate, aluminum and the like. Among them, spherical fused silica is desirable for reducing the viscosity. These inorganic fillers may be surface-treated with a silane coupling agent or the like, but can be used without surface treatment.

ここで、本発明の対象とする半導体装置は、ギャップサイズの範囲が10〜200μm程度のフリップチップ型半導体装置が好ましいが、この場合、アンダーフィル材の侵入性の向上と低線膨張化の両立を図るため、フリップチップギャップ幅(基板と半導体チップとの隙間)に対して平均粒径が約1/10以下、最大粒径が1/2以下の無機質充填剤を用いることが好ましい。更に好ましくは、平均粒径が0.1〜5μmであり、かつフリップチップ型半導体装置のギャップサイズに対して1/2以上の粒径のものが無機質充填剤全体の0.1重量%以下である無機質充填剤を用いることが望ましい。平均粒径が0.1μmより小さくなると粘度が上昇する場合があり、5μmを超えるとギャップ間にひっかかり、未充填になるおそれがある。   Here, the semiconductor device targeted by the present invention is preferably a flip chip type semiconductor device having a gap size in the range of about 10 to 200 μm. In this case, both improvement in penetration of the underfill material and reduction in linear expansion are achieved. Therefore, it is preferable to use an inorganic filler having an average particle size of about 1/10 or less and a maximum particle size of 1/2 or less with respect to the flip chip gap width (gap between the substrate and the semiconductor chip). More preferably, the average particle diameter is 0.1 to 5 μm and the particle diameter is ½ or more with respect to the gap size of the flip chip type semiconductor device is 0.1% by weight or less of the whole inorganic filler. It is desirable to use some inorganic filler. When the average particle size is smaller than 0.1 μm, the viscosity may increase. When the average particle size exceeds 5 μm, the gap may be caught between the gaps and may be unfilled.

ここで、ギャップサイズに対して1/2以上の粒径のものの測定方法としては、例えば、無機質充填剤と純水を1:9(重量)の割合で混合し、超音波処理を行って凝集物を十分崩し、これをギャップサイズの1/2の目開きのフィルターで篩い、篩上の残量を秤量する粒径検査方法を用いることができる。   Here, as a method for measuring a particle having a particle size of 1/2 or more with respect to the gap size, for example, an inorganic filler and pure water are mixed at a ratio of 1: 9 (weight), and subjected to ultrasonic treatment to agglomerate. It is possible to use a particle size inspection method in which an object is sufficiently broken, sieved with a filter having an opening of ½ of the gap size, and the remaining amount on the sieve is weighed.

無機質充填剤(C)の配合量としては、エポキシ樹脂と硬化剤の合計100重量部に対して50〜500重量部とすることが好ましく、より好ましくは100〜400重量部の範囲である。50重量部未満では、膨張係数が大きく、冷熱試験においてクラックの発生を誘発させるおそれがある。また500重量部を超えると、粘度が高くなり、薄膜侵入性の低下をもたらすおそれがある。   As a compounding quantity of an inorganic filler (C), it is preferable to set it as 50-500 weight part with respect to a total of 100 weight part of an epoxy resin and a hardening | curing agent, More preferably, it is the range of 100-400 weight part. If it is less than 50 parts by weight, the expansion coefficient is large and there is a risk of inducing the occurrence of cracks in the cold test. Moreover, when it exceeds 500 weight part, there exists a possibility that a viscosity may become high and the thin film penetration property may be brought about.

更に本発明の液状エポキシ樹脂組成物には、作業性を向上させるため、また粘度を低下させる目的から、沸点が130℃以上250℃以下の有機溶剤を用いることが好ましい。この有機溶剤の沸点として、より好ましくは140℃以上230℃以下、更に好ましくは150℃以上230℃以下である。沸点が130℃未満であると、ディスペンス時又は硬化時に溶剤が揮発し、ボイドが発生するおそれがある。また250℃を超えると硬化時に溶剤が揮発しきれず、強度の低下や密着性の低下を引き起こすおそれがある。   Furthermore, in the liquid epoxy resin composition of the present invention, it is preferable to use an organic solvent having a boiling point of 130 ° C. or higher and 250 ° C. or lower for the purpose of improving workability and reducing the viscosity. The boiling point of the organic solvent is more preferably 140 ° C. or higher and 230 ° C. or lower, and further preferably 150 ° C. or higher and 230 ° C. or lower. If the boiling point is less than 130 ° C., the solvent volatilizes during dispensing or curing, and voids may be generated. On the other hand, if the temperature exceeds 250 ° C., the solvent cannot be completely volatilized at the time of curing, which may cause a decrease in strength and a decrease in adhesion.

このような有機溶剤の例としては、2−エトキシエタノール、1,2−プロパンジオール、1,2−エタンジオール、ジエチレングリコール、キシレン、シクロヘキサノン、シクロヘキサノール、ホルムアミド、アセトアミド、ジエチレングリコールモノエチルエーテルアセテート等が挙げられる。   Examples of such organic solvents include 2-ethoxyethanol, 1,2-propanediol, 1,2-ethanediol, diethylene glycol, xylene, cyclohexanone, cyclohexanol, formamide, acetamide, diethylene glycol monoethyl ether acetate, and the like. It is done.

より好ましい有機溶剤は、エステル系有機溶剤である。エステル系有機溶剤以外のアルコール系溶剤又は水酸基を有する有機溶剤では、水酸基とアミンが容易に反応し、保存性が著しく悪くなるおそれがる。このような見地から、安全性を考えるとエステル系有機溶剤が好ましく、このようなエステル系有機溶剤としては、下記一般式(2)で表されるエステル系有機溶剤が例示できる。
4COO−[R5−O]n−R6 (2)
(式中、R4、R6は炭素数1〜6の一価炭化水素基、R5は炭素数1〜6のアルキレン基である。nは0〜3の整数である。)
A more preferable organic solvent is an ester organic solvent. In an alcohol solvent other than an ester organic solvent or an organic solvent having a hydroxyl group, the hydroxyl group and the amine easily react and the storage stability may be significantly deteriorated. From such a standpoint, in view of safety, ester organic solvents are preferable. Examples of such ester organic solvents include ester organic solvents represented by the following general formula (2).
R 4 COO- [R 5 -O] n -R 6 (2)
(Wherein R 4 and R 6 are monovalent hydrocarbon groups having 1 to 6 carbon atoms, R 5 is an alkylene group having 1 to 6 carbon atoms, and n is an integer of 0 to 3)

ここで、R4、R6の炭素数1〜6の一価炭化水素基としては、上述したR1〜R3と同様のものが例示でき、またR5の炭素数1〜6のアルキレン基としては、エチレン基、プロピレン基、メチルエチレン基、ブチレン基、ペンテン基、ヘキセン基等が挙げられる。 Here, examples of the monovalent hydrocarbon group having 1 to 6 carbon atoms of R 4 and R 6 include the same groups as those of R 1 to R 3 described above, and an alkylene group having 1 to 6 carbon atoms of R 5. Examples thereof include an ethylene group, a propylene group, a methylethylene group, a butylene group, a pentene group, and a hexene group.

上記式(2)で表されるエステル系有機溶剤の具体例としては、2−エトキシエチルアセテート、2−ブトキシエチルアセテート、ジエチレングリコールモノエチルエーテルアセテート、ジエチレングリコールモノブチルエーテルアセテート、ジエチレングリコールエチルエーテルアセテート、ジエチレングリコールブチルエーテルアセテートなどが挙げられる。   Specific examples of the ester organic solvent represented by the above formula (2) include 2-ethoxyethyl acetate, 2-butoxyethyl acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol ethyl ether acetate, diethylene glycol butyl ether acetate. Etc.

この有機溶剤の配合量は、組成物中のエポキシ樹脂と硬化剤の合計量100重量部に対して0.5〜10重量部、望ましくは1〜10重量部である。0.5重量部未満では十分な粘度の低下効果が得られず、10重量部を超えると架橋密度が低下し、十分な強度が得られなくなる。   The compounding amount of the organic solvent is 0.5 to 10 parts by weight, desirably 1 to 10 parts by weight with respect to 100 parts by weight of the total amount of the epoxy resin and the curing agent in the composition. If the amount is less than 0.5 part by weight, a sufficient viscosity reducing effect cannot be obtained. If the amount exceeds 10 parts by weight, the crosslinking density decreases, and sufficient strength cannot be obtained.

本発明の液状エポキシ樹脂組成物には、応力を低下させる目的でシリコーンゴム、シリコーンオイルや液状のポリブタジエンゴム、メタクリル酸メチル−ブタジエン−スチレンよりなる熱可塑性樹脂などを配合してもよい。好ましくは、アルケニル基含有エポキシ樹脂又はフェノール樹脂のアルケニル基と、下記平均組成式(3)で示される1分子中の珪素原子の数が20〜400であり、かつ珪素原子に直接結合した水素原子(SiH基)の数が1〜5であるオルガノポリシロキサンのSiH基との付加反応により得られる共重合体からなるシリコーン変性樹脂を配合することが好ましい。   The liquid epoxy resin composition of the present invention may be blended with silicone rubber, silicone oil, liquid polybutadiene rubber, thermoplastic resin made of methyl methacrylate-butadiene-styrene, or the like for the purpose of reducing stress. Preferably, the alkenyl group of the alkenyl group-containing epoxy resin or phenol resin, and the number of silicon atoms in one molecule represented by the following average composition formula (3) is 20 to 400, and a hydrogen atom bonded directly to the silicon atom It is preferable to blend a silicone-modified resin made of a copolymer obtained by an addition reaction with an SiH group of an organopolysiloxane having 1 to 5 (SiH groups).

a7 bSiO(4-a-b)/2 (3)
(式中、R7は置換又は非置換の一価炭化水素基、aは0.01〜0.1、bは1.8〜2.2、1.81≦a+b≦2.3を満足する正数である。)
H a R 7 b SiO (4-ab) / 2 (3)
(In the formula, R 7 is a substituted or unsubstituted monovalent hydrocarbon group, a is 0.01 to 0.1, b is 1.8 to 2.2, and 1.81 ≦ a + b ≦ 2.3 is satisfied. (It is a positive number.)

なお、R7の置換又は非置換の一価炭化水素基としては、炭素数1〜10、特に1〜8のものが好ましく、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert−ブチル基、ヘキシル基、オクチル基、デシル基等のアルキル基、ビニル基、アリル基、プロペニル基、ブテニル基、ヘキセニル基等のアルケニル基、フェニル基、キシリル基、トリル基等のアリール基、ベンジル基、フェニルエチル基、フェニルプロピル基等のアラルキル基などや、これらの炭化水素基の水素原子の一部又は全部を塩素、フッ素、臭素等のハロゲン原子で置換したフロロメチル基、ブロモエチル基、トリフルオロプロピル基等のハロゲン置換一価炭化水素基などを挙げることができる。
上記共重合体としては、中でも下記構造のものが望ましい。
The substituted or unsubstituted monovalent hydrocarbon group for R 7 is preferably a group having 1 to 10 carbon atoms, particularly 1 to 8 carbon atoms, and is preferably a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, or an isobutyl group. Alkyl groups such as tert-butyl group, hexyl group, octyl group and decyl group, alkenyl groups such as vinyl group, allyl group, propenyl group, butenyl group and hexenyl group, and aryl groups such as phenyl group, xylyl group and tolyl group , Aralkyl groups such as benzyl group, phenylethyl group, phenylpropyl group, etc., and fluoromethyl group, bromoethyl group, in which part or all of hydrogen atoms of these hydrocarbon groups are substituted with halogen atoms such as chlorine, fluorine, bromine, And halogen-substituted monovalent hydrocarbon groups such as a trifluoropropyl group.
Among the above copolymers, those having the following structures are desirable.

Figure 0004697476
Figure 0004697476

上記式中、R7は上記と同じであり、R9は水素原子又は炭素数1〜4のメチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert−ブチル基等のアルキル基であり、R10は−CH2CH2CH2−、−OCH2−CH(OH)−CH2−O−CH2CH2CH2−又は−O−CH2CH2CH2−である。mは4〜199、好ましくは19〜99の整数、pは1〜10の整数、qは1〜10の整数である。 In the above formula, R 7 is the same as above, and R 9 is a hydrogen atom or an alkyl such as a methyl group having 1 to 4 carbon atoms, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, or a tert-butyl group. R 10 is —CH 2 CH 2 CH 2 —, —OCH 2 —CH (OH) —CH 2 —O—CH 2 CH 2 CH 2 — or —O—CH 2 CH 2 CH 2 —. . m is an integer of 4 to 199, preferably 19 to 99, p is an integer of 1 to 10, and q is an integer of 1 to 10.

上記共重合体をジオルガノポリシロキサン単位がエポキシ樹脂100重量部に対して0〜20重量部、特には2〜15重量部含まれるように配合することで応力をより一層低下させることができる。   The stress can be further reduced by blending the copolymer so that the diorganopolysiloxane unit is contained in an amount of 0 to 20 parts by weight, particularly 2 to 15 parts by weight, based on 100 parts by weight of the epoxy resin.

本発明の液状エポキシ樹脂組成物には、更に必要に応じ、接着向上用炭素官能性シラン、カーボンブラックなどの顔料、染料、酸化防止剤、その他の添加剤を本発明の目的を損なわない範囲で配合することができる。但し、本発明においては、表面処理剤として使用する以外に接着向上用炭素官能性シラン等としてアルコキシ系シランカップリング剤を添加しないことが好ましい。   In the liquid epoxy resin composition of the present invention, if necessary, a carbon functional silane for improving adhesion, a pigment such as carbon black, a dye, an antioxidant, and other additives within a range not impairing the object of the present invention. Can be blended. However, in the present invention, it is preferable not to add an alkoxy-based silane coupling agent as a carbon-functional silane for improving adhesion other than the use as a surface treatment agent.

本発明の液状エポキシ樹脂組成物は、例えば、液状エポキシ樹脂、芳香族アミン系硬化剤、あるいは液状エポキシ樹脂と芳香族アミン系硬化剤との溶融混合物、それに無機質充填剤、必要に応じて有機溶剤及びその他の添加剤等を同時に又は別々に、必要により加熱処理を加えながら、撹拌、溶解、混合、分散させることにより得ることができる。これらの混合、撹拌、分散等の装置としては、特に限定されるものではないが、撹拌、加熱装置を備えたライカイ機、3本ロール、ボールミル、プラネタリーミキサー、ビーズミル等を用いることができる。またこれら装置を適宜組み合わせて使用してもよい。   The liquid epoxy resin composition of the present invention includes, for example, a liquid epoxy resin, an aromatic amine curing agent, a molten mixture of a liquid epoxy resin and an aromatic amine curing agent, an inorganic filler, and an organic solvent as necessary. And other additives can be obtained by stirring, dissolving, mixing, and dispersing at the same time or separately, optionally with heat treatment. The apparatus for mixing, stirring, dispersing and the like is not particularly limited, and a lykai machine, a three roll, a ball mill, a planetary mixer, a bead mill and the like equipped with a stirring and heating device can be used. Moreover, you may use combining these apparatuses suitably.

なお、本発明において、封止材として用いる場合の液状エポキシ樹脂組成物の粘度は、25℃において10,000ポイズ以下のものが好ましく、特に好ましくは10〜1,000ポイズである。また、この組成物の成形方法、成形条件は、常法とすることができるが、好ましくは、先に100〜120℃で0.5時間以上、特に0.5〜1時間、その後165℃で1時間以上、特に1〜4時間の条件で熱オーブンキュアを行う。100〜120℃での加熱が0.5時間未満では、硬化後にボイドが発生する場合があり、また165℃での加熱が1時間未満では、十分な硬化物特性が得られない場合がある。   In the present invention, the viscosity of the liquid epoxy resin composition when used as a sealing material is preferably 10,000 poise or less, particularly preferably 10 to 1,000 poise at 25 ° C. Further, the molding method and molding conditions of this composition can be conventional methods, but preferably at 100 to 120 ° C. for 0.5 hour or longer, particularly 0.5 to 1 hour, and then at 165 ° C. Heat oven cure is performed under conditions of 1 hour or more, particularly 1 to 4 hours. When heating at 100 to 120 ° C. is less than 0.5 hour, voids may be generated after curing, and when heating at 165 ° C. is less than 1 hour, sufficient cured product characteristics may not be obtained.

ここで、本発明に用いるフリップチップ型半導体装置としては、例えば図1に示したように、通常、有機基板1の配線パターン面に複数個のバンプ2を介して半導体チップ3が搭載されているものであり、上記有機基板1と半導体チップ3との隙間(バンプ2間の隙間)にアンダーフィル材4が充填され、その側部がフィレット材5で封止されたものとすることができるが、本発明の封止材は、特にアンダーフィル材として使用する場合に有効である。   Here, as a flip chip type semiconductor device used in the present invention, for example, as shown in FIG. 1, for example, a semiconductor chip 3 is usually mounted on a wiring pattern surface of an organic substrate 1 via a plurality of bumps 2. The gap between the organic substrate 1 and the semiconductor chip 3 (the gap between the bumps 2) is filled with the underfill material 4 and the side portion thereof is sealed with the fillet material 5. The sealing material of the present invention is particularly effective when used as an underfill material.

本発明の液状エポキシ樹脂組成物をアンダーフィル材として用いる場合、その硬化物のガラス転移温度以下の膨張係数は、20〜40ppm/℃であることが好ましい。このような膨張係数とする手段としては、例えば無機質充填剤をエポキシ樹脂と硬化剤の合計100重量部に対して100〜400重量部配合するなどの方法が採用し得る。   When using the liquid epoxy resin composition of this invention as an underfill material, it is preferable that the expansion coefficient below the glass transition temperature of the hardened | cured material is 20-40 ppm / degreeC. As a means for obtaining such an expansion coefficient, for example, a method of blending 100 to 400 parts by weight of the inorganic filler with respect to 100 parts by weight of the total of the epoxy resin and the curing agent can be employed.

なお、この場合、フィレット材用の封止材は公知のものでよく、特に上述したアンダーフィル材と同様の液状エポキシ樹脂組成物を用いることができるが、この場合はその硬化物のガラス転移温度以下の膨張係数が10〜20ppm/℃であるものが好ましい。   In this case, the sealing material for the fillet material may be a known material, and in particular, a liquid epoxy resin composition similar to the above-described underfill material can be used. In this case, the glass transition temperature of the cured product is used. The following expansion coefficient is preferably 10 to 20 ppm / ° C.

以下、実施例及び比較例を挙げて本発明を詳細に説明するが、本発明は下記の実施例に制限されるものではない。   EXAMPLES Hereinafter, although an Example and a comparative example are given and this invention is demonstrated in detail, this invention is not restrict | limited to the following Example.

[実施例1〜5、参考例1〜5、比較例1,2]
表1に示す成分を3本ロールで均一に混練することにより、12種の樹脂組成物を得た。これらの樹脂組成物を用いて、以下に示す試験を行った。その結果を表1に示す。
[Examples 1 to 5, Reference Examples 1 to 5 , Comparative Examples 1 and 2]
Twelve types of resin compositions were obtained by uniformly kneading the components shown in Table 1 with three rolls. The test shown below was done using these resin compositions. The results are shown in Table 1.

[粘度]
BH型回転粘度計を用いて4rpmの回転数で25℃における粘度を測定した。また、40℃にて24時間放置後の粘度(25℃)においても測定した。
[viscosity]
The viscosity at 25 ° C. was measured at a rotation speed of 4 rpm using a BH type rotational viscometer. Moreover, it measured also in the viscosity (25 degreeC) after leaving to stand at 40 degreeC for 24 hours.

[侵入テスト]
PI(ポリイミド)膜コートした10mm×10mmのシリコンチップを30mm×30mmのFR−4基板に約50μmのスペーサを用いて設置し、生じた隙間に、樹脂組成物を100℃で加熱したホットプレート上に設置させて溶融させた樹脂組成物を侵入させ、樹脂組成物が隙間を埋めたときの時間を測定した。
[Penetration test]
A 10 mm x 10 mm silicon chip coated with PI (polyimide) film was placed on a 30 mm x 30 mm FR-4 substrate using a spacer of about 50 μm, and the resin composition was heated at 100 ° C. in the generated gap. The resin composition that had been installed and melted was allowed to enter, and the time when the resin composition filled the gap was measured.

[ボイドテスト]
PI膜コートした10mm×10mmのシリコンチップを30mm×30mmのFR−4基板を用いて、ギャップ約50μmのフリップチップ型パッケージを用い、生じた隙間に樹脂組成物を侵入、硬化させ、ボイドの有無をC−SAM(SONIX社製)で確認した。
[Void test]
PI chip coated 10mm x 10mm silicon chip using 30mm x 30mm FR-4 substrate, flip chip type package with gap of about 50μm, intruding and curing resin composition in the generated gap, presence or absence of void Was confirmed by C-SAM (manufactured by SONIX).

[Tg(ガラス転移温度)、CTE1(膨張係数)、CTE2(膨張係数)]
5mm×5mm×15mmの硬化物試験片を用いて、TMA(熱機械分析装置)により毎分5℃の速さで昇温した時のTgを測定した。また、以下の温度範囲の膨張係数を測定した。
CTE1の温度範囲は50〜80℃、CTE2の温度範囲は200〜230℃である。
[Tg (glass transition temperature), CTE1 (expansion coefficient), CTE2 (expansion coefficient)]
Using a cured product test piece of 5 mm × 5 mm × 15 mm, Tg was measured when the temperature was raised at a rate of 5 ° C. per minute by TMA (thermomechanical analyzer). Moreover, the expansion coefficient in the following temperature range was measured.
The temperature range of CTE1 is 50 to 80 ° C, and the temperature range of CTE2 is 200 to 230 ° C.

[接着力テスト]
PI膜コートしたシリコンチップ上に上面の直径2mm、下面の直径5mm、高さ3mmの円錐台形状の試験片を載せ、165℃で3時間硬化させた。硬化後、得られた試験片の剪断接着力を測定し、初期値とした。更に、硬化させた試験片をPCT(121℃/2.1atm)で336時間吸湿させた後、接着力を測定した。いずれの場合も試験片の個数は5個で行い、その平均値を接着力として表記した。
[Adhesion test]
A test piece in the shape of a truncated cone having a diameter of 2 mm on the upper surface, a diameter of 5 mm on the lower surface, and a height of 3 mm was placed on a silicon chip coated with PI film and cured at 165 ° C. for 3 hours. After curing, the shear strength of the obtained specimen was measured and used as the initial value. Further, the cured test piece was absorbed with PCT (121 ° C./2.1 atm) for 336 hours, and then the adhesive strength was measured. In any case, the number of test pieces was five, and the average value was expressed as adhesive strength.

[PCT剥離テスト]
PI膜コートした10mm×10mmのシリコンチップを30mm×30mmのFR−4基板を用いて、ギャップ約50μmのフリップチップ型パッケージを用い、生じた隙間に樹脂組成物を侵入、硬化させ、30℃/65%RH/192時間後に最高温度265℃に設定したIRリフローにて5回処理した後の剥離、更にPCT(121℃/2.1atm)の環境下に置き、336時間後の剥離をC−SAM(SONIX社製)で確認した。
[PCT peel test]
Using a flip chip type package with a gap of about 50 μm, using a silicon chip of 10 mm × 10 mm coated with a PI film and a FR-4 substrate of 30 mm × 30 mm, the resin composition is penetrated into the generated gap, cured, and 30 ° C. / 65% RH / 192 hours later, stripping after 5 treatments with IR reflow set to a maximum temperature of 265 ° C., and placing in a PCT (121 ° C./2.1 atm) environment, stripping after 336 hours is C- It confirmed with SAM (made by SONIX).

[熱衝撃テスト]
PI膜コートした10mm×10mmのシリコンチップを30mm×30mmのFR−4基板を用いて、ギャップ約50μmのフリップチップ型パッケージを用い、生じた隙間に樹脂組成物を侵入、硬化させ、30℃/65%RH/192時間後に最高温度265℃に設定したIRリフローにて5回処理した後、−65℃/30分、150℃/30分を1サイクルとし、250,500,750,1000サイクル後の剥離、クラックを確認した。
[Thermal shock test]
Using a flip chip type package with a gap of about 50 μm, using a silicon chip of 10 mm × 10 mm coated with a PI film and a FR-4 substrate of 30 mm × 30 mm, the resin composition is penetrated into the generated gap, cured, and 30 ° C. / 65% RH / 192 hours later, IR reflow set to the maximum temperature of 265 ° C 5 times, then -65 ° C / 30 minutes, 150 ° C / 30 minutes as one cycle, 250, 500, 750, 1000 cycles later Peeling and cracking were confirmed.

Figure 0004697476
Figure 0004697476

Figure 0004697476
Figure 0004697476

硬化剤A:ジエチルトルエンジアミン(分子量:178)
硬化剤B:ジメチルチオトルエンジアミン(分子量:214.4)
硬化剤C:ジメチルトルエンジアミン(分子量:150)
C−300S:テトラエチルジアミノフェニルメタン(日本化薬社製)
RE303S−L:ビスフェノールF型エポキシ樹脂(日本化薬社製)
Curing agent A: diethyltoluenediamine (molecular weight: 178)
Curing agent B: dimethylthiotoluenediamine (molecular weight: 214.4)
Curing agent C: dimethyltoluenediamine (molecular weight: 150)
C-300S: Tetraethyldiaminophenylmethane (Nippon Kayaku Co., Ltd.)
RE303S-L: Bisphenol F type epoxy resin (Nippon Kayaku Co., Ltd.)

エピコート630H:3官能型エポキシ樹脂(ジャパンエポキシレジン(株)製)

Figure 0004697476
Epicoat 630H: Trifunctional epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd.)
Figure 0004697476

RE600NM:5−メチルレゾルシノールジグリシジルエーテル(日本化薬社製)

Figure 0004697476
RE600NM: 5-methylresorcinol diglycidyl ether (manufactured by Nippon Kayaku Co., Ltd.)
Figure 0004697476

シリカA:下記粒径検査方法により測定した粒径25μm以上が0.01重量%
、平均粒径3.2μmのゾルゲル法で製造された球状シリカ
シリカB:下記粒径検査方法により測定した粒径25μm以上が0.08重量%
、平均粒径3.6μmのゾルゲル法で製造された球状シリカ
粒径検査方法
シリカと純水を1:9(重量)の割合で混合し、超音波処理を行って凝集物を十分崩し、フィルター1(目開き25μm)で篩い、篩上に残ったシリカを秤量して残量を測定した。測定は5回行い、その平均値を測定値として重量%で表した。
Silica A: A particle size of 25 μm or more measured by the following particle size inspection method is 0.01% by weight.
Spherical silica silica B produced by a sol-gel method having an average particle size of 3.2 μm: a particle size of 25 μm or more measured by the following particle size inspection method is 0.08 wt%
, Spherical silica produced by the sol-gel method with an average particle size of 3.6 μm
Particle size inspection method Silica and pure water are mixed at a ratio of 1: 9 (weight), and ultrasonic treatment is performed to sufficiently break up the aggregates, and sieved with a filter 1 (aperture 25 μm). The remaining amount was measured by weighing. The measurement was carried out 5 times, and the average value was expressed as a percentage by weight.

溶剤A:2−ブトキシエチルアセテート 沸点192℃
溶剤B:PGMEA 沸点146℃
KBM403:シランカップリング剤、γ−グリシドキシプロピルトリメトキシ
シラン(信越化学工業製)
Solvent A: 2-butoxyethyl acetate Boiling point 192 ° C
Solvent B: PGMEA Boiling point 146 ° C
KBM403: Silane coupling agent, γ-glycidoxypropyltrimethoxy
Silane (manufactured by Shin-Etsu Chemical)

Figure 0004697476
Figure 0004697476

本発明の封止材を用いたフリップチップ型半導体装置の一例を示す断面図である。It is sectional drawing which shows an example of the flip chip type semiconductor device using the sealing material of this invention.

符号の説明Explanation of symbols

1 有機基板
2 バンプ
3 半導体チップ
4 アンダーフィル材
5 フィレット材
1 Organic substrate 2 Bump 3 Semiconductor chip 4 Underfill material 5 Fillet material

Claims (5)

(A)1分子内に3官能基以下のエポキシ基を含有する常温で液状の液状エポキシ樹脂であって、下記構造式(4)又は(5)で示されるエポキシ樹脂を含む液状エポキシ樹脂
Figure 0004697476

(式中、R8は水素原子、又は炭素数1〜20の一価炭化水素基である。また、xは1〜4の整数である。)
(B)下記一般式(1)で表される芳香族アミン化合物を5重量%以上含有する芳香族アミン系硬化剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤との配合モル比[(A)/(B)]が、0.7以上1.2以下である量
Figure 0004697476
(式中、R1〜R3は独立に炭素数1〜6の一価炭化水素基、CH3S−及びC25S−から選ばれる基である。)
(C)無機質充填剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤の合計量100重量部に対して50〜500重量部
を含有し、更に沸点が130℃以上250℃以下の有機溶剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤の合計量100重量部に対して0.5〜10重量部含有することを特徴とする液状エポキシ樹脂組成物。
(A) A liquid epoxy resin which is a liquid epoxy resin which is liquid at room temperature and contains an epoxy group having three or less functional groups in one molecule, and which contains an epoxy resin represented by the following structural formula (4) or (5)
Figure 0004697476

(In the formula, R 8 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. X is an integer of 1 to 4.)
(B) An aromatic amine curing agent containing 5% by weight or more of an aromatic amine compound represented by the following general formula (1) is blended with (A) a liquid epoxy resin and (B) an aromatic amine curing agent. Amount in which the molar ratio [(A) / (B)] is 0.7 or more and 1.2 or less
Figure 0004697476
(In the formula, R 1 to R 3 are groups independently selected from a monovalent hydrocarbon group having 1 to 6 carbon atoms, CH 3 S— and C 2 H 5 S—.)
(C) The inorganic filler contains 50 to 500 parts by weight with respect to 100 parts by weight of the total amount of (A) liquid epoxy resin and (B) aromatic amine curing agent , and further has a boiling point of 130 ° C to 250 ° C. A liquid epoxy resin composition comprising 0.5 to 10 parts by weight of the organic solvent (A) with respect to 100 parts by weight of the total amount of (A) liquid epoxy resin and (B) aromatic amine curing agent .
上記有機溶剤が、エステル系有機溶剤である請求項記載の液状エポキシ樹脂組成物。 The organic solvent is, claim 1 liquid epoxy resin composition wherein the ester organic solvents. 上記エステル系有機溶剤が、下記一般式(2)
4COO−[R5−O]n−R6 (2)
(式中、R4、R6は炭素数1〜6の一価炭化水素基、R5は炭素数1〜6のアルキレン基である。nは0〜3の整数である。)
で表されるエステル系有機溶剤である請求項記載の液状エポキシ樹脂組成物。
The ester organic solvent is represented by the following general formula (2)
R 4 COO- [R 5 -O] n -R 6 (2)
(Wherein R 4 and R 6 are monovalent hydrocarbon groups having 1 to 6 carbon atoms, R 5 is an alkylene group having 1 to 6 carbon atoms, and n is an integer of 0 to 3)
The liquid epoxy resin composition according to claim 2, which is an ester organic solvent represented by the formula:
(A)1分子内に3官能基以下のエポキシ基を含有する常温で液状の液状エポキシ樹脂であって、下記構造式(5)で示されるエポキシ樹脂を全エポキシ樹脂中25重量%以上含む液状エポキシ樹脂
Figure 0004697476
(式中、R8は水素原子、又は炭素数1〜20の一価炭化水素基である。また、xは1〜4の整数である。)
(B)下記一般式(1)で表される芳香族アミン化合物を5重量%以上含有する芳香族アミン系硬化剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤との配合モル比[(A)/(B)]が、0.7以上1.2以下である量
Figure 0004697476
(式中、R1〜R3は独立に炭素数1〜6の一価炭化水素基、CH3S−及びC25S−から選ばれる基である。)
(C)無機質充填剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤の合計量100重量部に対して50〜500重量部
を含有することを特徴とする液状エポキシ樹脂組成物。
(A) A liquid epoxy resin that is liquid at room temperature and contains an epoxy group having three or less functional groups in one molecule, and includes 25% by weight or more of the epoxy resin represented by the following structural formula (5) in the total epoxy resin Epoxy resin
Figure 0004697476
(In the formula, R 8 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. X is an integer of 1 to 4.)
(B) An aromatic amine curing agent containing 5% by weight or more of an aromatic amine compound represented by the following general formula (1) is blended with (A) a liquid epoxy resin and (B) an aromatic amine curing agent. Amount in which the molar ratio [(A) / (B)] is 0.7 or more and 1.2 or less
Figure 0004697476
(In the formula, R 1 to R 3 are groups independently selected from a monovalent hydrocarbon group having 1 to 6 carbon atoms, CH 3 S— and C 2 H 5 S—.)
(C) Liquid epoxy resin composition containing 50 to 500 parts by weight of inorganic filler based on 100 parts by weight of total amount of (A) liquid epoxy resin and (B) aromatic amine curing agent .
請求項1乃至のいずれか1項記載の液状エポキシ樹脂組成物の硬化物をアンダーフィル材として封止したフリップチップ型半導体装置。 A flip chip type semiconductor device in which a cured product of the liquid epoxy resin composition according to any one of claims 1 to 4 is sealed as an underfill material.
JP2007165973A 2007-06-25 2007-06-25 Liquid epoxy resin composition and flip chip type semiconductor device Expired - Fee Related JP4697476B2 (en)

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JP5024547B2 (en) * 2008-02-07 2012-09-12 信越化学工業株式会社 Liquid epoxy resin composition for semiconductor sealing with controlled fluidity and flip chip type semiconductor device sealed with a cured product thereof
JP5116152B2 (en) * 2008-03-17 2013-01-09 信越化学工業株式会社 Resin composition for manufacturing semiconductor devices
JP2010077234A (en) * 2008-09-25 2010-04-08 Shin-Etsu Chemical Co Ltd Liquid epoxy resin composition and semiconductor device
JP2011014885A (en) * 2009-06-01 2011-01-20 Shin-Etsu Chemical Co Ltd Dam material composition of underfill material for multilayer semiconductor device, and method of manufacturing multilayer semiconductor device using the same dam material composition

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JPH04348120A (en) * 1991-05-24 1992-12-03 Nippon Kayaku Co Ltd Sealing epoxy resin composition
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