JP4693869B2 - Pattern verification method, pattern verification system, mask manufacturing method, semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a pattern verification method, a pattern verification system, a mask manufacturing method, and a semiconductor device manufacturing method for manufacturing a semiconductor element, a liquid crystal display element, and the like.

  Recent progress in semiconductor manufacturing technology is very remarkable, and semiconductors with a minimum processing dimension of 0.18 μm are mass-produced. Such miniaturization is realized by dramatic progress in fine pattern formation techniques such as mask process technology, photolithography technology, and etching technology. When the pattern size is sufficiently large, the planar shape of the LSI pattern to be formed on the wafer is directly drawn as a mask pattern, a mask pattern that is faithful to the mask pattern is created, and the mask pattern is transferred onto the wafer by the projection optical system. Then, by etching the base, a pattern almost identical to the mask pattern could be formed on the wafer. However, as the pattern becomes finer, it has become difficult to faithfully form the pattern in each process, and a problem has arisen that the final finished dimension does not match the mask pattern.

  In particular, in the lithography and etching processes that are the most important for achieving microfabrication, other pattern layout environments arranged around the pattern to be formed greatly affect the dimensional accuracy of the pattern. Therefore, in order to reduce these influences, optical proximity correction (OPC) or process proximity effect correction in which an auxiliary pattern is added to the mask pattern in advance so that the dimension after processing is formed into a desired pattern. (PPC: Process Proximity Correction) technology and the like (hereinafter referred to as PPC method) have been reported.

  At present, with the increasing complexity of optical proximity effect correction (OPC) and process proximity effect correction (PPC) technologies, the pattern created by the designer and the mask pattern used during exposure differ greatly. It is no longer possible to easily predict the finished pattern shape at. Therefore, verification using a lithography simulator is indispensable. In (Non-Patent Document 1), the edge of a desired pattern on a wafer is compared with the edge of a pattern transferred using a layout after OPC. Verification tools have been proposed to check whether the difference is within a predetermined tolerance.

  (Patent Document 1) proposes a technique for predicting the positional deviation between the edge of the desired pattern and the edge of the transfer pattern with high accuracy by aligning the proximity effect correction and the physical model for verification. In this proposal, a solution is also taken for the point that enormous time is required for verification of the full chip level of the device. That is, a method for verifying by combining a rule-based method for correcting based on a correction rule obtained in advance and a simulation-based method using a simulator that models a phenomenon associated with the exposure and development process is proposed.

  Up to now, proximity effect correction (OPC) was repeatedly performed, and a result of performing a transfer simulation using the layout of the completed mask and the layout after the OPC could be output. However, these pieces of information do not include information on how the designer should perform the layout.

  Further, in verification using a conventional lithography simulator, the light intensity at many evaluation points has to be calculated, and verification processing takes time. Therefore, it is desired to improve the TAT of the verification process flow.

  By the way, there are roughly two types of patterns which are problematic on the wafer. If there is a difference from the desired pattern under any transfer condition, the other is a case where a difference occurs when the process condition changes although it is not a problem under the “ideal” condition.

Since the output result of the conventional method is a comparison with a desired pattern, that is, “ideal” data, the two types of separation cannot be made.
JP 9-319067 A Large Area Optical Proximity Correction using Pattern Based Correction, DM Newmark et.al, SPIE Vol.2322 (1994) 374

  As described above, the verification result between the desired pattern and the mask pattern can be output, but the guideline cannot be given to the designer when the mask pattern needs to be changed. It is also desired to improve the TAT of the verification process flow. Although the desired pattern and the mask pattern can be compared, it has not been found that the problematic pattern is caused by the desired pattern or process conditions.

  An object of the present invention is to provide a pattern verification method and a pattern verification system capable of improving the TAT of a verification process flow between a desired pattern and a mask pattern.

  Another object of the present invention is to provide a pattern verification method and a pattern verification system that can determine whether a pattern in question is caused by a desired pattern or process conditions.

  The present invention is configured as follows to achieve the above object.

  A pattern verification method according to an example of the present invention includes a step of preparing a desired pattern and a mask pattern corresponding to the pattern, a step of setting one or more evaluation points on the edge of the desired pattern, and a calculation for obtaining light intensity. A step of calculating the light intensity at the evaluation point at the time of best focus using a formula; a step of calculating a first-order differential value at the evaluation point of the calculation formula at the time of best focus; and a calculation formula for calculating the light intensity. And calculating a light intensity at the evaluation point at the time of defocus, obtaining a first-order differential value at the evaluation point of the calculation formula at the time of defocus, A step of obtaining an exposure amount margin from the first order differential value, a difference in light intensity at the time of the best focus and defocus, a determined exposure amount margin, and a predetermined specification From characterized in that it comprises a step of verifying the layout, the.

  A pattern verification method according to another example of the present invention includes a step of preparing a mask pattern corresponding to a desired pattern, a step of setting one or more evaluation points on the edge of the desired pattern, and a light intensity. Calculating the light intensity at the evaluation point at the best focus using a calculation formula for obtaining the light intensity at the auxiliary point moved by a predetermined distance from the evaluation point at the best focus using the calculation formula. Calculating the difference between the light intensity at the evaluation point at the best focus and the light intensity at the auxiliary point, and the light at the evaluation point using the calculation formula at the time of defocusing A step of calculating an intensity; a step of calculating a light intensity at the auxiliary point at the time of the defocus; and a difference between the light intensity at the evaluation point at the time of the defocus and the light intensity at the auxiliary point. Sought And a step of verifying the layout from the light intensity at the evaluation point at the time of the best focus and the defocus, the difference between the light intensity at the evaluation point and the auxiliary point, and a predetermined specification. .

  A pattern verification method according to still another example of the present invention includes a step of preparing a desired pattern and a mask pattern corrected to form the pattern on a substrate, and a mask pattern under a first process condition. Performing a process simulation to obtain a first pattern shape formed on the processing substrate, and extracting a portion where the difference between the first pattern shape and the desired pattern shape is greater than a set value; Performing a process simulation on the mask data under a second process condition different from the first process condition to obtain a second pattern shape formed on a processing substrate; and the second pattern shape; A step of extracting a portion where the difference from the shape of the desired pattern is larger than the set value, and a portion extracted from the first pattern shape The locations included in the second group having a portion which is extracted from the first group and a second pattern, characterized in that it comprises a step of classifying according to the position and the process conditions, the.

  According to the present invention, the light intensity at the evaluation point at the time of best focus and defocus, and the first-order differentiation at the evaluation point of the expression at the time of best focus and defocus, using the calculation formula for calculating the light intensity. The exposure amount margin is obtained from the obtained first-order differential value, and the layout is verified from the difference in light intensity at the time of the best focus and the defocus, the obtained exposure amount margin, and a predetermined specification. By doing so, TAT can be improved.

  A pattern shape formed on a substrate using a mask pattern under a plurality of process conditions is obtained, a portion where the difference between the obtained pattern shape and a desired shape is large is extracted, and according to the extracted portion and the pattern condition By classifying, it is possible to determine whether it is caused by a desired pattern or process condition.

  Embodiments of the present invention will be described below with reference to the drawings.

(First embodiment)
FIG. 1 is a flowchart showing an outline of the procedure of a pattern verification method according to the first embodiment of the present invention. FIG. 2 is a diagram used for explaining the pattern verification method according to the first embodiment of the present invention.

  First, design circuit pattern data required to ensure device characteristics in designing LSI or the like is created. Mask pattern data having a pattern obtained by enlarging the design circuit pattern is formed in accordance with the reduction ratio of the projection optical system of the exposure apparatus (step ST11). FIG. 2A shows a desired pattern 10 included in the design circuit layout. As shown in FIG. 2B, n evaluation points Pi (i = 1 to n) are set on the edge of the desired pattern 10 included in the design data (step ST12). The evaluation point was generated at a position where coordinates were designated in advance, and was always placed at a position 100 μm away from the corner.

  A reference value (design value) of a process parameter, which is a factor causing a pattern edge position shift, is set (step ST31). The process parameters include parameters at the time of exposure such as a resist film thickness, numerical aperture NA, exposure amount, defocus value, and parameters after exposure such as PEB temperature and development time.

  A variation range from the reference value is set for each process parameter (step ST32). In this embodiment, the variation range of the exposure amount is set from under dose to best dose to over dose. Further, the fluctuation range of the focus position was set from the best focus position to the defocus position. Process parameters other than the exposure amount and focus position do not vary from the set values.

  The following processing is performed for all set evaluation points (steps ST13 to ST16). The positional deviation amount of the evaluation point Pi (i = 1) is obtained by a plurality of combinations in which the values of the respective process parameters are changed within the variation range set in step ST12 (step ST14). In the present embodiment, the edge position shift amount in the three cases of (best dose / best focus), (over dose / defocus), and (under dose / defocus) is calculated. Not only this combination but also any combination of exposure amount and focus can be calculated simultaneously without imposing a load. Similarly, it is possible to calculate the amount of misalignment caused by changes in the exposure setting value, focus setting value, process parameter, exposure device numerical aperture, coherence factor, annular shielding rate, aberration, and the like. Furthermore, the parameters are not limited to the above items, and all items that cause positional deviation can be set as necessary.

  A method for obtaining the amount of displacement will be described with reference to FIG. FIG. 3 is a flowchart showing an outline of a procedure for obtaining the edge position deviation amount.

  First, a reference light intensity (Ith) for forming the desired pattern 10 on the wafer is set according to a request from the subsequent photoetching process or the like (step 31).

Thereafter, the light intensity I (t ₁ ) at the position coordinate t ₁ of the evaluation point Pi of the desired pattern 1 is calculated from the Hopkins equation (Equation (1)) (step ST32).

Where TCC (ω, ω ′): Transmission Cross Coefficient,
ω, ω ′: spatial frequency I (t): function representing light intensity at position coordinate t M (ω): Fourier transform of mask complex transmittance distribution in frequency plane M (ω ′) ^* : mask complex transmission in frequency plane Complex conjugate i of the Fourier transform of the rate distribution: imaginary unit
In order to calculate the light intensity I (t ₁ ) using the Hopkins equation, it is necessary to perform the following pre-calculation.

  (1) A mask pattern defining a complex amplitude transmittance distribution is created from the mask pattern, and a mutual transmission coefficient TCC (ω, ω ′) is calculated.

(2) The complex amplitude transmittance distribution of the mask pattern is Fourier transformed to obtain M (ω) and M ^* (ω ′).

(3) Calculate the product of the mutual transmission coefficient TCC (ω, ω ′), Fourier transform M (ω), M ^* (ω ′) (TCC (ω, ω ′) × M (ω) × M ^* (ω ′ ))

(4) Inverse Fourier transform of mutual transmission coefficient TCC (ω, ω ′) × M (ω) × M ^* (ω ′).

(5) The product of {TCC (ω, ω ′) × M (ω) × M ^* (ω ′)} and exp {i (ω−ω ′) t} is integrated with respect to ω and ω ′.

Next, the differential amount I ′ (t ₁ ) of the light intensity I (t ₁ ) at the position coordinate t ₁ of this evaluation point Pi is calculated by the equation (2) (step ST33).

In the calculation according to the equation (2), the part of exp (i (ω−ω ′) t) that requires a large calculation load refers to the result calculated when the light intensity I (t ₁ ) is obtained in step ST32.

The CD deviation amount X is obtained using the equation (3), the light intensity I (t ₁ ), the first-order differential value I ′ (t ₁ ) of the light intensity, and the reference light intensity Ith (step ST34).

  The reason why the positional deviation amount X is obtained from the equation (3) will be described with reference to FIG. FIG. 4 is a diagram schematically showing the light intensity obtained from the mask pattern.

The first-order differential value I ′ (t ₁ ) is the slope at the position t ₁ of the light intensity function I (t). A linear function passing through the position (t ₁ , I (t ₁ )) and the slope t ₁ is I ′ (t ₁ ) × t + c (c is a constant). The position coordinate t ′ _{1 at} the intersection of the linear function f (t) and Ith is (Ith−c) / I ′ (t ₁ ) from the linear function. In addition, t ₁ = (I (t ₁ ) −c) / I ′ (t ₁ ). Since the positional deviation amount X is t ₂ −t ₁ , the equation (3) is obtained.

Similarly, when the light intensity distribution in the vicinity of an arbitrary coordinate t on the desired pattern is approximated by the second-order derivative I ″ (t) of the light intensity distribution, the relationship between the reference light intensity Ith and the CD deviation amount X is (4) It is given by the formula.

Therefore, the CD deviation amount X is given by the solution of the above quadratic equation (equation (5)).

  Note that, in the vicinity of the corner, the amount of positional deviation in the two orthogonal directions is obtained.

  An average value and a standard deviation are calculated from the amount of displacement obtained for all evaluation points Pi (i = 1 to n) (step ST17). It is determined whether the standard deviation of the positional deviation amount is within a predetermined setting range (step ST18).

  If the standard deviation of the positional deviation amount is not within the set range, the desired pattern is changed (step ST19). For each evaluation point, the one having the largest edge position deviation amount is extracted, and a pattern 11 is created by connecting the extracted ones (FIG. 2C). In FIG. 2C, the desired pattern 10 is reduced according to the reduction rate of the exposure apparatus so that the desired pattern 10 and the pattern 11 have the same size. Then, a pattern 12 is generated at a position where the edge is further moved by the maximum displacement amount (FIG. 2 (d)), and the extracted maximum displacement amount is a dimension for MEF (Mask Error Factor, mask variation amount). A pattern in which the edge is moved in the opposite direction by the value divided by the variation ratio) is generated, and a recommended design layout is obtained.

  If the standard deviation of the positional deviation amount is within the set range, it is determined whether the average value of the positional deviation amount is within a predetermined average value (step ST20). If the average value of the positional deviation amounts is not within the set range, the mask pattern is changed (step ST21).

  FIG. 5 shows the result of displaying the recommended pattern obtained by this method. Reference numeral 13 denotes a recommended pattern (mask pattern) for forming a desired pattern on the wafer. By creating a layout with the edges moved as shown in this result, it was possible to form a desired pattern on the wafer.

  That is, a desired pattern can be formed on a wafer by changing the design layout itself according to the output layout. In other words, design guidelines could be given.

  In step ST33, even if there are a plurality of evaluation points on the desired pattern, since the evaluation points are arranged in a straight line, the X coordinate and the Y coordinate are common. Therefore, once the inverse Fourier transform calculation, which requires a calculation load on the optical image, is calculated, the calculation at the later evaluation point only refers to this result. Therefore, even if the evaluation score is increased to improve the accuracy of evaluation, the calculation load is hardly applied.

  In addition, as a result of performing the same processing with the conventional method and the present method using common data, it was found that the processing can be performed in 36 hours with the present method, whereas the conventional method took 420 hours.

  Further, in the flow of the present embodiment, it is determined whether or not to change the mask pattern using the variation in the amount of displacement and the average value. However, depending on the parameter to be varied, the variation in the amount of positional deviation may be asymmetric. 6 and 7 illustrate this. That is, in FIG. 6, the variation when the process parameter is changed is normally distributed. In the case of a normal distribution, the average value and the mode value match. On the other hand, in FIG. 7, the variation in the amount of misalignment caused by changing the parameters is asymmetric. In this case, the mode value is used instead of the average value to determine whether to change the mask pattern.

  Furthermore, in the present embodiment, the amount of pattern misregistration is calculated, but the value of Mask Error Factor (MEF) can also be calculated in the same manner. That is, the parameters for calculating the positional deviation are limited to those relating to the mask, the positional deviation is calculated, and if the deviation amount is larger than a predetermined value, the mask specifications are changed.

  Similarly, when exposure parameters such as NA, partial coherence, illumination shape, exposure wavelength, and resist parameters are changed, the feedback destination is exposure device parameters such as lithography margin, exposure device aberration, and lens transmittance distribution. In this case, the exposure apparatus parameters are fed back to the assist bar rules if the parameters are assist bars. In this way, when it is desired to limit the feedback destination, it is possible to select the parameter to be varied and to check the positional deviation amount.

  Further, the manner in which the evaluation points are arranged and the manner in which the patterns are generated are not limited to the method according to the present embodiment, and various methods can be set in accordance with the balance between accuracy and processing time.

(Second Embodiment)
In the present invention, according to the flow shown in FIG. 8, each process parameter is varied within a set range with respect to the pattern obtained by performing the optical proximity correction on the mask pattern, and the pattern generated on the wafer and the pattern on the wafer are changed. The amount of positional deviation from the desired pattern was examined for each parameter, and the variation and the average value of all the positional deviation amounts were obtained. As a result, although the average value was within a predetermined specification range, the variation was larger than the predetermined value. Therefore, a recommended layout for giving a desired pattern on the wafer was output by the following procedure.

  FIG. 8 is a flowchart showing an outline of the procedure of the pattern verification method according to the second embodiment of the present invention. FIG. 9 is a diagram used for explaining a pattern verification method according to the second embodiment of the present invention.

  First, design circuit pattern data required to ensure device characteristics in designing LSI or the like is created. Mask pattern data having a pattern obtained by enlarging the design circuit pattern is formed in accordance with the reduction ratio of the projection optical system of the exposure apparatus (step ST51). FIG. 9A shows a desired pattern 10 on the substrate.

  As shown in FIG. 9B, division points Pcu are set, and the mask pattern is divided into predetermined lengths (step ST52).

  As shown in FIG. 9C, the correction point Pco is set at a predetermined position of the divided edge (step ST53). Note that the division point Pcu and the correction point Pco may be set directly on the edge of the mask pattern.

  Optical proximity effect correction is performed on the edge of the mask pattern corresponding to each set edge (step ST54). In step ST54, the correction amount on the set correction point is calculated, and the edge of the mask pattern is moved by the calculated correction amount.

  As shown in FIG. 9D, n evaluation points Pi (i = 1 to n) are set on the edge of the desired pattern 10 (step ST55).

  A process parameter that is a factor causing edge position deviation is set (step ST21). The process parameters include parameters at the time of exposure such as a resist film thickness, numerical aperture NA, exposure amount, defocus value, and parameters after exposure such as PEB temperature and development time. A variation range is set for the process parameter (step ST22). In this embodiment, the variation range of the exposure amount is set from under dose to best dose to over dose. Further, the fluctuation range of the focus position was set from the best focus position to the defocus position. Process parameters other than the exposure amount and focus position do not vary from the set values.

  The positional deviation amount is obtained for all the set evaluation points (steps ST56 to ST59). Since the method for obtaining the positional deviation amount is the same as in the first embodiment, the description thereof is omitted.

  An average value and a standard deviation are calculated from the amount of positional deviation obtained for all evaluation points Pi (i = 1 to n) (step ST60). It is determined whether the standard deviation of the positional deviation amount is within a predetermined setting range (step ST61).

  If the standard deviation is not within the set range, the desired pattern is changed (step ST62). The maximum edge position deviation amount is extracted from the edge position deviation amounts calculated at the evaluation points on the divided desired pattern, and the pattern 12 is generated at a position where the edge is moved by the maximum position deviation amount (FIG. 9). (E)). A pattern is generated in which the edge is moved in the reverse direction by a value obtained by dividing the extracted maximum positional deviation amount by MEF (Mask Error Factor, the ratio of the dimensional fluctuation to the mask fluctuation quantity).

  That is, a desired pattern can be formed on a wafer by changing the design layout itself according to the output layout. In other words, design guidelines could be given.

  If the average value of the positional deviation amounts is within the setting range, it is determined whether the average value of the positional deviation amounts is within the predetermined setting range (step ST63). If the average value of the positional deviation amounts is not within the set range, the correction mask pattern is changed (step ST64).

  In step ST55, even if there are a plurality of evaluation points on the desired pattern, the evaluation points are arranged in a straight line, and therefore the X coordinate and the Y coordinate are common. Therefore, once the inverse Fourier transform calculation, which requires a calculation load on the optical image, is calculated, the calculation at the later evaluation point only refers to this result. Therefore, even if the evaluation score is increased to improve the accuracy of evaluation, the calculation load is hardly applied.

  FIG. 9 is a schematic diagram when the edge is moved with respect to a desired pattern using the lithography simulation of the present method. The evaluation points in the figure were generated at positions where the coordinates were specified in advance, and the evaluation points were arranged at the division points of the desired pattern and at positions 100 μm away from the corners.

  FIG. 10 shows a result of generating a pattern in the vicinity of a desired pattern edge by changing the process parameter within a predetermined variation range in accordance with the above-described method. 21 is an optical image when the transfer simulation is performed under the reference exposure amount and the best focus condition, and 22 is an optical image when the transfer simulation is performed under an exposure amount higher in energy than the reference exposure amount and 0.2 μm defocused. , 23 shows an optical image when a transfer simulation is performed under an exposure amount having energy lower than the reference exposure amount and defocused by 0.2 μm. Reference numeral 24 denotes a range of the desired pattern divided, and the result of the transfer simulation under the condition that the exposure amount is higher in energy than the reference exposure amount and defocused by 0.2 μm, and the maximum amount of edge position deviation from the desired pattern. The pattern generated at the position of the edge position deviation amount of 25 is a result of performing a transfer simulation under the condition that an exposure amount having energy lower than the reference exposure amount and 0.2 μm defocused within a range of a desired pattern divided by 25; The pattern generated at the position of the maximum edge position deviation amount among the edge position deviation amounts from the desired pattern is shown. From this result, it was found that the maximum absolute value and the sign of the deviation between the desired pattern and the transfer simulation can be obtained for all divided desired patterns.

  FIG. 11 shows the result of displaying the recommended pattern obtained in step ST62 of the present method. In FIG. 11, reference numeral 33 (solid line) indicates a layout indicating a desired pattern on the wafer, reference numeral 32 (dashed line) indicates a layout indicating the maximum error amount, and reference numeral 31 (dashed line) indicates a recommendation for forming the desired pattern on the wafer. Show the layout. By creating a layout with the edges moved as shown in this result, it was possible to form a desired pattern on the wafer.

  In addition, as a result of performing the same processing with the conventional method and the present method using common data, it was found that the processing can be performed in 61 hours with the present method, whereas the conventional method took 420 hours.

  In the present embodiment, the edge position shift amount in the three cases of (best dose / best focus), (over dose / defocus), and (under dose / defocus) is calculated. Not only this combination but also any combination of exposure amount and focus can be calculated simultaneously without imposing a load. Similarly, it is possible to calculate the amount of misalignment caused by changes in the exposure setting value, focus setting value, process parameter, exposure device numerical aperture, coherence factor, annular shielding rate, aberration, and the like. In addition, it is possible to determine whether to change the mask pattern or redo the proximity effect correction by comparing the calculated variation in the amount of displacement and the average value. Further, the parameters are not limited to the above items, and all items that cause positional deviation can be set as necessary.

  12 and 13 show a method of displaying a marker of the amount of edge position deviation when the process parameter is one type and plural types. As shown in FIG. 12, when there is only one type of process parameter, the marker 41 is displayed at the evaluation point by the amount of deviation between the pattern obtained from the transfer simulation and the mask pattern. When there are a plurality of process parameters, as shown in FIG. 13, a plurality of markers 43 are displayed, and variations and average values of all the markers are calculated. In FIG. 13, Ed is the desired pattern edge position, and Eavg is the average position of the edge position deviation amount.

  In the present embodiment, an example in which optical proximity effect correction is performed by a normal correction method has been shown. However, the proximity effect correction method is not limited to the normal correction method, and proximity effect correction considering a lithography margin is also possible. This verification method can be used. The correction tracking method at this time is different from the conventional method as shown in FIG.

  That is, the proximity effect correction is performed when the average value of the positional deviation and the deviation of the desired pattern are large. In the conventional method, correction is pursued so that the simulation result and the desired edge position coincide with each other under the optimum device conditions. In the present embodiment, in the proximity effect correction considering the lithography margin, the correction is pursued so that the average value of the simulation result matches the desired edge position.

  This verification method can also be applied to a new desired pattern in which a conversion difference is added to the desired pattern. That is, when a conversion difference is added to the chasing position under the optimum conditions of the device in the conventional method, the chasing position becomes an edge position to which the conversion difference is added (FIG. 15). . At this time, the evaluation point may be on the original desired edge (before the conversion difference is added).

  Furthermore, although the amount of pattern misregistration is calculated in the present embodiment, the MEF value can be calculated in the same manner. That is, the parameters for calculating the positional deviation are limited to those relating to the mask, the positional deviation is calculated, and if the deviation amount is larger than a predetermined value, the mask specifications are changed. Similarly, when exposure parameters such as numerical aperture NA, partial coherence, illumination shape, exposure wavelength, and resist parameters are changed, the exposure destination is an exposure device such as lithography margin, exposure device aberration, and lens transmittance distribution. If the parameter is an exposure apparatus parameter, and if the parameter is an assist bar, it is fed back to the assist bar rule. In this way, when it is desired to limit the feedback destination, it is possible to select the parameter to be varied and to check the positional deviation amount.

  Further, the manner in which the evaluation points are arranged and the manner in which the pattern is generated are not limited to the method of the present embodiment, and can be variously set according to the balance between accuracy and processing time.

(Third embodiment)
As the pattern becomes finer, in the first and second embodiments, it may be necessary to further improve the accuracy of corner portions or the like when calculating the edge position deviation amount. In the present embodiment, a positional deviation amount calculation method (hereinafter, slope method) different from step ST14 in the first embodiment and ST57 in the second embodiment will be described.

  Set the reference light intensity. A plurality of auxiliary evaluation points are automatically set in a direction perpendicular to the edge with respect to the evaluation points set on the edge. The auxiliary evaluation points to be automatically generated are 30 nm on both sides from the point on the desired pattern edge, and six evaluation points were added to this area at intervals of 10 nm. This evaluation point is determined in consideration of the processing speed. In this embodiment, the difference between the edge position at the evaluation point with respect to the optical image by the conventional method and the edge position of the desired pattern generates the evaluation point. And the evaluation point interval were changed, and a condition was found where the difference was 1 nm or less.

The light intensity at each evaluation point and auxiliary evaluation point is obtained. Interpolate between the obtained light intensities using the spline method. A coordinate t ₂ of the interpolated light intensity that becomes the reference light intensity is calculated. Then, t ₂ −t ₁ is set as the positional deviation amount.

  The recommended pattern was obtained by applying to the second embodiment by using the above-described method of calculating the positional deviation amount. Since the obtained recommended pattern is the same result as in the second embodiment, the illustration is omitted. However, the difference is clear when the results of the positional deviation amounts at all the evaluation points are compared.

  The same pattern as the pattern evaluated in the first embodiment was evaluated by the spline method, and the amount of positional deviation from the desired pattern was compared. The pattern used was a rectangle with a long side dimension of 1 μm and a short side direction of 0.09 μm, and two types of masks were prepared: dark field and bright field. FIG. 16 shows an outline of the pattern. FIG. 16A shows a dark field mask, and FIG. 16B shows a bright field mask. In FIG. 16, 51 is an opening and 52 is light shielding.

  These masks were subjected to optical proximity correction, and exposure conditions were as follows: exposure wavelength: 193 nm, numerical aperture (NA): 0.75, coherence factor (σ): 0.85, 2/3 annular illumination ( (Illumination center shielding ratio), and the amount of positional deviation between the pattern formed on the wafer by the corrected mask and the desired edge under the condition that the reference exposure amount Ith = 0.218 and the development model is considered.

  FIG. 16 shows the result when a dark field mask (opening inside the edge and shading around) is used, and FIG. 17 shows the result when using a bright field mask (shading inside the edge and transmitting light around).

  FIG. 17 is a diagram illustrating the value of the position shift amount of the best focus / best dose. In FIG. 17, the solid line indicates the amount of positional deviation obtained by the spline method, the broken line indicates the slope method, and the dotted line indicates the positional deviation amount obtained by the conventional method. From this, it can be seen that the amount of deviation obtained by the conventional method and the amount of deviation obtained by the spline method almost coincide with each other even at the corner portions (both ends of the X axis).

  FIG. 18 is a diagram showing a difference (broken line) between the conventional method and the slope method under a best focus / best dose condition, and a difference (solid line) between the spline method and the conventional method. FIG. 18 clearly shows that the difference between the spline method and the conventional method is small.

  FIG. 19 is a diagram showing the value of the amount of misalignment under the defocus / best dose condition. In FIG. 19, the solid line indicates the amount of displacement obtained by the spline method, the broken line indicates the slope method, and the dotted line indicates the positional deviation amount obtained by the conventional method. FIG. 20 is a diagram showing a difference (broken line) between the conventional method and the slope method under a defocus / best dose condition, and a difference (solid line) between the spline method and the conventional method. FIG. 20 clearly shows that the spline method has a small difference. It can be seen that even under the defocused condition, the difference between the spline method and the conventional method is small.

  21 to 24 show the results when the mask pattern is changed to the bright pattern. Also in this case, the difference between the result of the spline method and the conventional method is smaller.

  FIG. 21 is a diagram showing the value of the position shift amount of the best focus / best dose. FIG. 22 is a diagram showing the difference between the conventional method and the slope method and the difference between the spline method and the conventional method under the best focus / best dose conditions. FIG. 23 is a diagram illustrating the value of the positional deviation amount under the defocus / best dose condition. FIG. 24 is a diagram showing the difference between the conventional method and the slope method and the difference between the spline method and the conventional method under the defocus / best dose condition.

  In FIGS. 21 and 23, the solid line indicates the amount of displacement obtained by the spline method, the broken line indicates the slope method, and the dotted line indicates the positional deviation amount obtained by the conventional method. 22 and 24, the broken line indicates the difference between the conventional method and the slope method, and the solid line indicates the difference between the spline method and the conventional method.

  In the present embodiment, the edge position shift amount in the three cases of (best dose / best focus), (over dose / defocus), and (under dose / defocus) is calculated. Not only this combination but also any combination of exposure amount and focus can be calculated simultaneously without imposing a load. Similarly, it is possible to calculate the amount of misalignment caused by changes in the exposure setting value, focus setting value, process parameter, exposure device numerical aperture, coherence factor, annular shielding rate, aberration, and the like. Further, it is possible to determine whether to change the mask pattern or to perform correction again by comparing the calculated variation in the amount of misalignment and the average value. Further, the parameters are not limited to the above items, and all items that cause positional deviation can be set as necessary.

(Fourth embodiment)
In the present embodiment, the light intensity (log dose) on the desired pattern edge on the wafer and the gradient of the light intensity are obtained within a focus margin range predetermined for the layout, and the exposure margin is calculated from these values. To do.

  FIG. 25 is a flowchart showing an outline of the procedure of the pattern verification method according to the fourth embodiment of the present invention. Steps similar to those in the flowchart shown in FIG. Also, the present embodiment will be described with reference to the ED-tree in FIG.

  The layout used in this embodiment is a 90 nm line and space (LS) pattern. On the other hand, the calculation conditions are exposure wavelength: 193 nm, NA: 0.75, σ: 0.85, ε: 0.67, and the light intensity after exposure and development is calculated.

  A dimension tolerance and a focus margin (defocus value) are set (step ST82). In this embodiment, when a dimension tolerance of 0.01 μm is given, the defocus value is 0.15 μm.

  The light intensity and the inclination are calculated under the two conditions of the best focus condition and the defocus condition (step ST74). The light intensity and the inclination are calculated as follows.

Similar to the first embodiment, the light intensity I (t ₁ ) at the position coordinate t ₁ of the evaluation point Pi of the desired pattern 1 is calculated from the Hopkins equation (Equation (1)).

Next, the first-order differential value (slope) I ′ (t ₁ ) of the light intensity I (t ₁ ) at the position coordinate t ₁ of the evaluation point 11 is calculated by the equation (2).

  The values obtained on the desired pattern edge of the layout are: best focus: light intensity (log dose) 0.2182069, slope 1.819103, defocus (0.15 μm defocus): light intensity 0.217902 The slope was 1.605271. First, the difference between the best focus and defocus exposure amounts was 0.0003049.

On the other hand, given the dimensional tolerance and tilt, the exposure margin at which an edge is formed within the dimensional tolerance is:
Exposure margin = light intensity (log dose) [no dimension] + tilt [1 / μm] x dimension [μm]
Given by. Therefore, the exposure amount margin is calculated using the inclination and the dimension tolerance respectively obtained under the best focus / defocus conditions.

  Regarding the best focus, the inclination is 1.819103, and when the dimension tolerance is 0.01 μm, the exposure margin DMb is 0.0182.

  When converted to a ratio to the reference light intensity Ith (threshold value at which the edge of the pattern is formed) 0.201089 given in one embodiment, 8.56% is obtained.

  Similarly, in the case of defocusing, from an inclination of 1.605271 and a dimensional tolerance of 0.01 nm, the exposure margin DMd is 0.0161, and the ratio to the reference light intensity is 7.98%.

  From these values, the single exposure amount margin DMs of this layout is obtained. The single exposure margin DMs is defined as follows.

Single exposure margin = (smaller of exposure margin DMb and exposure margin DMd) − (value obtained by converting difference D of light intensity at best focus and defocus into exposure margin)
From this equation, in the present embodiment, 7.98% −0.1452% (difference = 1.819103−1.605271 = 0.000305 is converted into an exposure amount margin using a reference light intensity of 0.201089. ), The single exposure amount margin DMs is calculated to be 7.97% (step ST77). The margin of this layout obtained by the conventional method is 7.75%, and they are almost the same.

  The exposure amount margin allowed for the layout given in step ST76 is 7%. By comparing the exposure margin (allowable margin) with the result of the exposure margin (calculated margin) obtained in the present embodiment, it is possible to determine whether or not there is a layout margin at a desired edge position (step ST77). In the 90 nm LS pattern, it is determined that there is a margin, and the process proceeds to the next evaluation point (step ST79, step ST80).

  On the other hand, the same process was performed for the 85 nm LS pattern. The obtained results were best focus: light intensity 0.218099, inclination 1.450778, defocus: light intensity 0.2178164, inclination 1.3636. From this result, it is determined that the exposure amount margin obtained in the same manner as 90LS is 6.63%, the specification has not reached 7% and layout correction is necessary, and layout correction information is output (step ST78).

  FIG. 27 shows the result of obtaining the same layout margin by the conventional method and the present method. Both agree well.

  In the conventional method, when obtaining a margin, a total of three dimensions, that is, two points of an evaluation point and a dimension tolerance position, are calculated for best focus and defocus. Therefore, in the method according to the conventional method, it is necessary to calculate the light intensity at six points. On the other hand, in the method according to the present embodiment, the light intensity at two points, that is, the total of two evaluation points at the time of best focus and defocus, and the respective inclinations may be calculated.

  In the expressions (1) and (2), the calculation load of exp (i (ω−ω ′) t) is large. However, in the case of this embodiment, when calculating the inclination using the equation (2), it is possible to refer to the result calculated when determining the light intensity at the reference point, and there is no need to newly calculate. . The ratio of the calculation time only referring to exp (i (ω−ω ′) t) and the new calculation time is 1:10. Therefore, the calculation time for six points and the time for calculating the two points and the respective inclinations are 6: 2.2, and the calculation time is shortened to about 1/3. As a result, verification TAT can be improved.

(Fifth embodiment)
In the present embodiment, a calculation similar to that in the first embodiment is performed on an isolated (ISO) pattern of 90 nm to obtain an exposure amount margin. The obtained values were best focus: light intensity 0.2164658, inclination 3.3321888, defocus: light intensity 0.2005, inclination 3.142987. From these values, the single exposure amount margin was 7.6%. The exposure amount margin required for this layout is 7%. At this evaluation point, it is determined that there is a margin, and the following processing is performed.

  Best focus: light intensity 0.2184965, slope 3.307209, defocus: light intensity 0.241642, slope 3.132345. The margin obtained from this was 4.06%, which did not satisfy the given specifications. Therefore, it is determined that layout correction is necessary, and layout correction information is output.

  Furthermore, the result of the single margin obtained according to the fourth and fifth embodiments can be combined to further verify the layout when there is a single margin. That is, the 90LS and 90ISO patterns both satisfy the single margin. When considering the common margin of both, the common margin can be considered by using the size of the single margin of 90LS and 90ISO and the difference in the exposure amount at the best focus.

  First, the difference at the best focus corresponds to a margin of (0.2184658−0.2182069) /0.201989=0.12%. The common margin is 7.6 + 0.12 = 7.72%, and the common margin satisfies the specification 7%. If it is less than 7%, OPC correction information is output.

  In the fourth and fifth embodiments, an example is shown in which a margin is obtained using a typical layout of products, and verification is performed. However, the layout of various layouts is not specified by the pattern of the embodiment. Verification can be performed. The exposure conditions are not limited to this embodiment, and can be set according to the purpose.

In addition, when the margin is given in dimensional specifications,
Minimum slope = Δlight intensity / ΔCD,
Δ light intensity = in accordance with the amount of change in the exposure amount within the range of the assumed exposure amount margin, verification may be performed whether the inclination of the evaluation point satisfies the allowable inclination.

(Sixth embodiment)
The fourth and fifth embodiments are more effective means when a mask whose proximity effect is corrected is used for the pattern. When the light intensity (I) of the pattern and the reference light intensity (Ith) of the device are relatively close to each other, the inclination at the position of the reference light intensity Ith can be approximated by the inclination of the light intensity at the evaluation point position. However, when the two are not close to each other, the gradient of the light intensity is not always continuous, and an error is included in the approximation. In such a case, by obtaining the difference between the light intensity at the auxiliary point that has moved the position of the reference point by the dimension tolerance and the light intensity at the reference point, by determining the ratio of this difference to the reference light intensity, An exposure amount margin can be calculated.

  In the present embodiment, the exposure amount margin obtained by the above-described method is used as an index for pattern discrimination. In addition, this method is applied to the 85 nm L / S pattern shown in the fourth embodiment. First, regarding the best focus margin, the evaluation point position: light intensity 0.218099, and the auxiliary point (evaluation point position + 4.25 nm) light intensity is 0.204726. From these differences and the reference light intensity of the device 0.201089, the best focus margin is (0.2518099−0.211412) /0.201089×100, which is 3.325%. Since this value is a value when half of the dimensional tolerance is moved, if this is corrected on both sides, it becomes 3.325 × 2 = 6.65%.

  Similarly, in the case of defocusing, the light intensity at the evaluation point position is 0.2178164, and the light intensity at the auxiliary point is 0.21116. As with the best focus, the margin is 6.62%. The single exposure margin obtained from these values and 0.14%, which is the difference between the light intensity of best focus and defocus, converted to the ratio to the reference light intensity is 6.48%, and the layout does not reach the specification of 7%. It is determined that correction is necessary, and layout correction information is output.

(Seventh embodiment)
FIG. 28 is a flowchart showing an outline of the procedure of the pattern verification method according to the seventh embodiment of the present invention.

  First, a desired pattern 61 (FIG. 29A) and a mask pattern 62 (FIG. 29B) subjected to proximity effect correction to form the desired pattern on the substrate are prepared (step ST91). The mask pattern is subjected to optical proximity effect correction and / or process proximity effect correction.

  A condition (first condition) is set for the integrated circuit pattern data (step ST92). A simulation is performed under the first condition, and the shape of the first pattern formed on the processing substrate is obtained (step ST93). FIG. 30A shows a pattern 71 obtained by simulation. In this embodiment, for example, it is assumed that the integrated circuit is transferred under the conditions of NA = 0.75, σ = 0.85, and ε = 2 / 3ann using an exposure apparatus with an illumination condition ArF.

  Next, the shape of the desired pattern on the processing substrate is compared with the shape formed on the processing substrate obtained by the simulation, and a portion having a large difference is extracted (step ST94). The large difference at this time is defined by, for example, the minimum line width allowed by the design rule, 10% of the space, or 10% of the design of the set portion. This flow itself is a flow for obtaining a place where the deviation from the desired pattern shape is large in the conventional simulation. In FIG. 30A, reference numeral 72 denotes a polygon indicating a place where the difference is large. An error mark is output in the form of a polygon in the integrated circuit pattern data.

  Next, a second condition different from the first condition for the same integrated circuit pattern data: NA = 0.75, σ = 0.85, ε = 2/3 ann, defocus value = 0.1 μm, + 5% exposure An amount is set (step ST95). A simulation under the second condition is performed to determine the shape of the pattern formed on the processing substrate (step ST96). FIG. 30B shows a pattern shape 72 obtained by simulation.

  In this case, the difference between the first condition and the second condition is the focus and the exposure amount. In addition, 1) focus, 2) exposure amount, 3) aberration, 4) illumination shape, and 5) illumination condition. 6) Resist type is considered.

  As in the first condition, the shape of the desired pattern 61 on the processing substrate is compared with the pattern shape 72 formed on the processing substrate obtained by the simulation, and a portion having a large difference is extracted ( Step ST97). In FIG. 30 (b), the portions 82 and 83 having large differences are indicated by polygons 82.

  Next, by comparing the location extracted under the first condition and the location extracted under the second condition, a location extracted only under the first condition, a location 83 extracted only under the second condition, Classification is made into the locations 81 and 82 extracted under both the first condition and the second condition (step ST98).

  For example, the first condition is NA = 0.75, σ = 0.85, ε = 2/3 ann defocus value = 0 μm, and the second condition is NA = 0.75, σ = 0.85, ε = 2 / When the 3ann defocus value = 0.1 μm and the + 5% exposure amount condition, the part extracted by only the first condition or extracted by both the first condition and the second condition is “optical proximity effect correction itself. "Or" integrated circuit pattern data itself "indicates a problem. In addition, the fact that it is extracted only under the second condition indicates that there is no problem in “optical proximity effect correction” itself, and that the exposure margin itself is small, and it is understood that some kind of countermeasure is necessary.

  As described above, a pattern shape formed on a substrate using a mask pattern under a plurality of process conditions is obtained, a portion where a difference between the obtained pattern shape and a desired shape is large is extracted, and the extracted portion and By classifying according to the pattern condition, it is possible to determine whether the difference between the pattern shape and the desired pattern is caused by the desired pattern or the process condition.

  The comparison itself can be performed by using a tool (DRC) for confirming a design rule such as a commercial layout width without developing a new program. This can be done by taking the pattern XOR output in the polygon format, etc., but the “slightly” polygon format may be different. In this case, it is necessary to perform an ambiguous search. There are many definitions of ambiguity. For example, when “the number of vertices is the same” and the difference in “side length of each polygon” is small, for example, the sum of the differences in the lengths of the sides of the polygon is OPC. It is conceivable that the value is less than the minimum correction unit set at the time.

(Eighth embodiment)
Next, a pattern verification program and a pattern verification system according to the eighth embodiment of the present invention will be described with reference to FIG.

  As shown in FIG. 31, the pattern verification system 100 includes a computer 101 that controls calculation processing and control of each unit, a storage unit 102 that stores calculation results, a verification program, and the like, and an input unit that inputs each input data and the like 103, a storage medium input / output unit 104 for writing verification program, design circuit pattern, and mask pattern data from a storage medium such as an optical disk storing a verification program created by another computer to the storage unit 102; The display unit 105 is configured to display input / output information, calculation results, and the like. The edge position deviation amount verification system 100 includes a verification that executes the pattern verification method described in any of the first to sixth embodiments. The program is installed.

  For example, the verification program is input from the input unit 103 such as a keyboard while looking at the display unit 105, or the verification program created by another computer is input / output via a storage medium such as an optical disk. The data is input to the computer 101 through the unit 104 and stored in the storage unit 102.

  The verification program is executed by calling the verification program stored in the storage unit 102 to the arithmetic unit while viewing the display unit 105 and inputting initial data from the input unit 103 as necessary initial data. be able to. The amount of edge position deviation obtained after the calculation, information for changing design data, and the like are stored in the storage unit 102, and displayed on the display unit 105 and output to a printer (not shown) as necessary. Alternatively, output from the storage medium input / output unit 104 to a storage medium such as various disks or semiconductor memories is possible.

  In addition, although illustrated here as an independent verification system, a communication adapter (not shown) or the like for connecting to a data processing network or the like may be provided.

  The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention at the stage of implementation. Further, the above embodiments include inventions at various stages, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent elements. For example, even if some constituent elements are deleted from all the constituent elements shown in the embodiment, at least one of the problems described in the column of the problem to be solved by the invention can be solved, and is described in the column of the effect of the invention. When at least one of the effects is obtained, a configuration in which this configuration requirement is deleted can be extracted as an invention.

5 is a flowchart showing an outline of a procedure of a pattern verification method according to the first embodiment. The figure used for description of the pattern verification method concerning a 1st embodiment. Flow chart showing an outline of the procedure for obtaining the edge position deviation amount The figure which shows typically the light intensity on the board | substrate obtained from a mask pattern. The figure which shows the recommended pattern for forming a desired pattern. The figure which shows distribution and frequency of position shift amount. The figure which shows distribution and frequency of position shift amount. 9 is a flowchart showing an outline of a procedure of a pattern verification method according to the second embodiment. The figure used for description of the pattern verification method concerning a 2nd embodiment. The figure which shows the result of having changed the process parameter in the range of the defined variation | change_quantity, and having generated the pattern near the desired pattern edge. The figure which shows the recommended pattern for forming a desired pattern. The figure which shows the display method of the marker of edge position deviation | shift amount in case a process parameter is one type. The figure which shows the display method of the marker of edge position deviation | shift amount when there are multiple types of process parameters. The figure which shows the outline of the driving-in method of correction | amendment. The figure which shows the outline of the driving-in method of correction | amendment. The figure which shows the outline of the pattern concerning 3rd Embodiment. The figure which shows the value of position shift amount on the best focus best dose conditions. The figure which shows the difference between the conventional method and the slope method, and the difference between the spline method and the conventional method under the best focus / best dose condition. Diagram showing the amount of misalignment under defocus / best dose conditions The figure which shows the difference between the conventional method and the slope method, and the difference between the spline method and the conventional method under the best focus / best dose condition. The figure which shows the value of the position shift amount of the best focus / best dose. The figure which shows the difference between the conventional method and the slope method, and the difference between the spline method and the conventional method under the best focus / best dose condition. The figure which shows the value of the amount of position shifts on defocus / best dose conditions. The figure which shows the difference between the conventional method and the slope method, and the difference between the spline method and the conventional method under the defocus / best dose condition. 10 is a flowchart showing an outline of a procedure of a pattern verification method according to the fourth embodiment. The figure which shows ED-tree used for description of the procedure of the pattern verification method concerning 4th Embodiment. The figure which shows the result of having calculated | required the margin of the same layout with the method of the conventional method and this embodiment. 15 is a flowchart showing a procedure of a pattern verification method according to the seventh embodiment. The figure which shows the outline of a desired pattern and a mask pattern. The figure which shows the pattern and desired pattern which were obtained by simulation. The figure which shows the pattern verification system which concerns on 8th Embodiment.

Explanation of symbols

  10 ... Desired pattern, 11 ... Pattern, 12 ... Pattern, 41 ... Marker, 43 ... Marker

Claims (6)

Preparing a desired pattern and a mask pattern corresponding to the pattern;
Setting one or more evaluation points on the edge of the desired pattern;
Calculating the light intensity at the evaluation point at the time of best focus using a calculation formula for determining the light intensity;
Obtaining a first derivative value at the evaluation point of the calculation formula at the time of best focus;
Calculating the light intensity at the evaluation point at the time of defocusing using a calculation formula for calculating the light intensity;
Obtaining a first derivative value at the evaluation point of the calculation formula at the time of defocusing;
A step of obtaining an exposure margin from the first derivative value at the time of the best focus and defocus;
A step of verifying the layout from the difference in light intensity at the time of the best focus and the defocus, the obtained exposure amount margin, and a predetermined specification;
A pattern verification method comprising: A step of preparing a mask pattern corresponding to the desired pattern;
Setting one or more evaluation points on the edge of the desired pattern;
Calculating the light intensity at the evaluation point at the time of best focus using a calculation formula for determining the light intensity;
Calculating the light intensity at the auxiliary point moved by a predetermined distance from the evaluation point at the time of best focus using the calculation formula;
Obtaining a difference between the light intensity at the evaluation point at the best focus and the light intensity at the auxiliary point;
Calculating the light intensity at the evaluation point using the calculation formula at the time of defocusing;
Calculating the light intensity at the auxiliary point at the time of the defocusing;
Obtaining a difference between the light intensity at the evaluation point at the time of defocus and the light intensity at the auxiliary point;
A step of verifying the layout from the light intensity at the evaluation point at the time of the best focus and the defocus, the difference between the light intensity at the evaluation point and the auxiliary point, and a predetermined specification;
A pattern verification method comprising: Preparing a desired pattern and a mask pattern corrected to form the pattern on the substrate;
Performing a process simulation on the mask pattern under a first process condition to obtain a first pattern shape formed on the processing substrate;
Extracting a location where the difference between the first pattern shape and the desired pattern shape is larger than a set value;
Performing a process simulation on the mask data under a second process condition different from the first process condition to obtain a second pattern shape formed on the processing substrate;
Extracting a point where the difference between the second pattern shape and the desired pattern shape is larger than the set value;
Classifying locations included in the first group having locations extracted from the first pattern shape and the second group having locations extracted from the second pattern shape according to position and process conditions; ,
A pattern verification method comprising: A step of verifying a mask pattern using the pattern verification method according to claim 1;
A process of manufacturing a mask using the verified mask pattern;
A method for manufacturing a mask, comprising: Preparing a mask formed using the mask manufacturing method according to claim 4;
Performing lithography using the mask;
A method for manufacturing a semiconductor device, comprising: Means for performing a process simulation on the mask pattern under the first and second process conditions to obtain first and second pattern shapes formed on the processing substrate;
A first group having a portion extracted from the first pattern shape, and a second group, where the difference between the first and second pattern shapes and the desired pattern shape is greater than a set value, respectively. Means for obtaining a second group having locations extracted from the pattern shape;
Means for classifying locations included in the first and second groups according to position and process conditions;
A pattern verification system characterized by including:

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