JP4686470B2 - 電子衝突型デバイスにおけるハロー低減用の表面構造 - Google Patents
電子衝突型デバイスにおけるハロー低減用の表面構造 Download PDFInfo
- Publication number
- JP4686470B2 JP4686470B2 JP2006542709A JP2006542709A JP4686470B2 JP 4686470 B2 JP4686470 B2 JP 4686470B2 JP 2006542709 A JP2006542709 A JP 2006542709A JP 2006542709 A JP2006542709 A JP 2006542709A JP 4686470 B2 JP4686470 B2 JP 4686470B2
- Authority
- JP
- Japan
- Prior art keywords
- detection device
- anode
- electron
- electrons
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 125000001475 halogen functional group Chemical group 0.000 title claims description 49
- 230000009467 reduction Effects 0.000 title description 12
- 238000001514 detection method Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000006117 anti-reflective coating Substances 0.000 claims 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000011295 pitch Substances 0.000 description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 40
- 229910052710 silicon Inorganic materials 0.000 description 39
- 239000010703 silicon Substances 0.000 description 39
- 238000004088 simulation Methods 0.000 description 37
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 14
- 229910052737 gold Inorganic materials 0.000 description 14
- 239000010931 gold Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000013307 optical fiber Substances 0.000 description 8
- 239000010405 anode material Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001803 electron scattering Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 230000010006 flight Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/08—Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted or stored, e.g. backing-plates for storage tubes or collecting secondary electrons
- H01J29/085—Anode plates, e.g. for screens of flat panel displays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
- H01J31/506—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect
- H01J31/507—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect using a large number of channels, e.g. microchannel plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2231/00—Cathode ray tubes or electron beam tubes
- H01J2231/50—Imaging and conversion tubes
- H01J2231/50057—Imaging and conversion tubes characterised by form of output stage
- H01J2231/50068—Electrical
- H01J2231/50073—Charge coupled device [CCD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2231/00—Cathode ray tubes or electron beam tubes
- H01J2231/50—Imaging and conversion tubes
- H01J2231/50057—Imaging and conversion tubes characterised by form of output stage
- H01J2231/50068—Electrical
- H01J2231/50078—Resistive anode
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Electron Tubes For Measurement (AREA)
Description
このニーズおよび別のニーズを満たすために、そして、その目的を鑑みて、本発明は、電子のソースを提供するカソードと、カソードから放射された電子を受け取るための、カソードの反対側に配置されたアノードとを含んだ電子検出デバイスを提供する。アノードは、電子検出デバイスの出力信号におけるハローを低減する模様付き表面を含む。
Claims (17)
- 電子のソースを提供するカソードと、
該カソードから放射された電子を受け取るための、該カソードの反対側に配置されたアノードと
を備えた電子検出デバイスであって、
該アノードは、該電子検出デバイスの出力信号におけるハローを低減する模様付き表面を含み、該模様付き表面は、各々が逆ピラミッドの底部によって規定される複数の開口部を含む、電子検出デバイス。 - 前記複数の開口部は、横方向に、1.0ミクロンから30.0ミクロンまで変化するピッチ値の間隔で置かれ、0.5のピッチに対する深さの比から2.0のピッチに対する深さの比まで変化する縦方向の深さを含む、請求項1に記載の電子検出デバイス。
- 前記複数の開口部が、前記アノードにおいて70%〜90%の範囲の開口比(OAR)を形成するように、間隔があけられている、請求項2に記載の電子検出デバイス。
- 前記アノードおよび前記カソードが、前記放射された電子に初期エネルギー値を提供するような電位差を含み、該エネルギー値が1keVと20keVの間で変化する、請求項2に記載の電子検出デバイス。
- 前記電子検出デバイスが、ハイブリッド型フォトダイオード(HPD)と、電子衝突型アクティブピクセルセンサ(EBAPS)と、電子衝突型電荷結合ダイオード(EBCCD)と、電子衝突型金属−半導体−金属真空光電管(MSMVPT)と、アバランシェフォトダイオード(APD)と、抵抗性アノードとのうちの1つである、請求項1に記載の電子検出デバイス。
- マイクロチャネルプレート(MCP)が前記カソードと前記アノードとの間に配置されている、請求項1に記載の電子検出デバイス。
- 前記アノードが、半導体材料から形成され、反射防止膜(ARC)を必要としない、請求項1に記載の電子検出デバイス。
- 前記カソードと前記アノードとの間の縦方向の距離が、横方向に間隔をあけて配置された前記複数の開口部のピッチ値よりも大きい、請求項1に記載の電子検出デバイス。
- 電子のソースを提供するカソードと、
該カソードから放射された電子を受け取るための、該カソードの反対側に配置されたアノードと
を備えた電子検出デバイスであって、
該アノードは上面を含み、
該上面は、該電子検出デバイスの出力信号におけるハローを低減するために、各々が逆ピラミッドの底部によって規定される複数の開口部を含む、電子検出デバイス。 - 前記逆ピラミッドの底部が、前記アノードの前記上面において実質的に正方形であり、
該アノードに形成された壁は、該逆ピラミッドの尖部を形成するように該底部から延びており、該尖部は、該逆ピラミッドの該底部よりも前記カソードからさらに縦方向に離れた位置に配置されている、請求項9に記載の電子検出デバイス。 - 前記逆ピラミッドの前記底部は、一辺が6ミクロンの正方形であり、
該逆ピラミッドの前記尖部は、該底部から縦方向に4.091ミクロンの間隔をあけて配置されている、請求項10に記載の電子検出デバイス。 - 前記複数の開口部が、横方向に、6.0ミクロンのピッチで間隔があけられており、70%〜90%の範囲のOARを形成する、請求項9に記載の電子検出デバイス。
- 前記アノードおよび前記カソードが、前記放射された電子に初期エネルギー値を提供するような電位差を含み、該エネルギー値が1keVと20keVの間で変化する、請求項9に記載の電子検出デバイス。
- 前記電子検出デバイスが、ハイブリッド型フォトダイオード(HPD)と、電子衝突型アクティブピクセルセンサ(EBAPS)と、電子衝突型電荷結合ダイオード(EBCCD)と、電子衝突型金属−半導体−金属真空光電管(MSMVPT)と、アバランシェフォトダイオード(APD)と、抵抗性アノードとのうちの1つである、請求項9に記載の電子検出デバイス。
- マイクロチャネルプレート(MCP)が前記カソードと前記アノードとの間に配置されている、請求項9に記載の電子検出デバイス。
- 前記アノードが、半導体材料から形成され、反射防止膜(ARC)を必要としない、請求項9に記載の電子検出デバイス。
- 電子のソースを提供するカソードと、
該カソードから放射された電子を受け取るための、該カソードの反対側に配置されたアノードと
を備えた電子検出デバイスであって、
該アノードは、該電子検出デバイスの出力信号におけるハローを低減する模様付き表面を含み、
該模様付き表面が、各々が逆ピラミッドの底部によって規定される複数の開口部を含む、電子検出デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/727,705 | 2003-12-03 | ||
US10/727,705 US7023126B2 (en) | 2003-12-03 | 2003-12-03 | Surface structures for halo reduction in electron bombarded devices |
PCT/US2004/040222 WO2005057603A2 (en) | 2003-12-03 | 2004-12-02 | Surface structures for halo reduction in electron bombarded devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007514282A JP2007514282A (ja) | 2007-05-31 |
JP4686470B2 true JP4686470B2 (ja) | 2011-05-25 |
Family
ID=34633534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006542709A Active JP4686470B2 (ja) | 2003-12-03 | 2004-12-02 | 電子衝突型デバイスにおけるハロー低減用の表面構造 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7023126B2 (ja) |
EP (1) | EP1700328B1 (ja) |
JP (1) | JP4686470B2 (ja) |
CN (1) | CN1890773B (ja) |
WO (1) | WO2005057603A2 (ja) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040169248A1 (en) * | 2003-01-31 | 2004-09-02 | Intevac, Inc. | Backside thinning of image array devices |
FR2939960B1 (fr) | 2008-12-11 | 2011-01-07 | Univ Claude Bernard Lyon | Procede de traitement pour un capteur sensible au photon unique et dispositif en faisant application. |
CA2684811C (en) * | 2009-11-06 | 2017-05-23 | Bubble Technology Industries Inc. | Microstructure photomultiplier assembly |
US8482090B2 (en) * | 2010-07-15 | 2013-07-09 | Exelis, Inc. | Charged particle collector for a CMOS imager |
JP5065516B2 (ja) * | 2010-08-04 | 2012-11-07 | エフ イー アイ カンパニ | 薄い電子検出器における後方散乱の減少 |
US9793673B2 (en) | 2011-06-13 | 2017-10-17 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
US10197501B2 (en) | 2011-12-12 | 2019-02-05 | Kla-Tencor Corporation | Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors |
US9496425B2 (en) | 2012-04-10 | 2016-11-15 | Kla-Tencor Corporation | Back-illuminated sensor with boron layer |
US9601299B2 (en) | 2012-08-03 | 2017-03-21 | Kla-Tencor Corporation | Photocathode including silicon substrate with boron layer |
WO2014075060A1 (en) * | 2012-11-12 | 2014-05-15 | The Board Of Trustees Of The Leland Stanford Junior Univerisity | Nanostructured window layer in solar cells |
US9151940B2 (en) | 2012-12-05 | 2015-10-06 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
US9529182B2 (en) | 2013-02-13 | 2016-12-27 | KLA—Tencor Corporation | 193nm laser and inspection system |
US9608399B2 (en) | 2013-03-18 | 2017-03-28 | Kla-Tencor Corporation | 193 nm laser and an inspection system using a 193 nm laser |
US9478402B2 (en) * | 2013-04-01 | 2016-10-25 | Kla-Tencor Corporation | Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor |
US9748294B2 (en) | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
US9410901B2 (en) | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
US9804101B2 (en) | 2014-03-20 | 2017-10-31 | Kla-Tencor Corporation | System and method for reducing the bandwidth of a laser and an inspection system and method using a laser |
US9767986B2 (en) | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
US9748729B2 (en) | 2014-10-03 | 2017-08-29 | Kla-Tencor Corporation | 183NM laser and inspection system |
US9860466B2 (en) | 2015-05-14 | 2018-01-02 | Kla-Tencor Corporation | Sensor with electrically controllable aperture for inspection and metrology systems |
US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
US10313622B2 (en) | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
US10685806B2 (en) * | 2016-10-14 | 2020-06-16 | L-3 Communications Corporation-Insight Technology Division | Image intensifier bloom mitigation |
WO2018112979A1 (zh) * | 2016-12-24 | 2018-06-28 | 华为技术有限公司 | 一种图像处理方法、装置以及终端设备 |
US10175555B2 (en) | 2017-01-03 | 2019-01-08 | KLA—Tencor Corporation | 183 nm CW laser and inspection system |
US10163599B1 (en) * | 2018-01-03 | 2018-12-25 | Eagle Technology, Llc | Electron multiplier for MEMs light detection device |
US11114489B2 (en) | 2018-06-18 | 2021-09-07 | Kla-Tencor Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
EP3680928B1 (en) * | 2019-01-09 | 2021-08-25 | Eagle Technology, LLC | Electron multiplier for mems light detection device |
US11848350B2 (en) | 2020-04-08 | 2023-12-19 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer |
CN111584332A (zh) * | 2020-06-17 | 2020-08-25 | 西安中科英威特光电技术有限公司 | 一种电子轰击成像型光电器件及高速相机 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10172458A (ja) * | 1996-12-10 | 1998-06-26 | Hamamatsu Photonics Kk | イメージインテンシファイア |
WO2003032358A1 (en) * | 2001-10-09 | 2003-04-17 | Itt Manufacturing Enterprises, Inc. | Intensified hybrid solid-state sensor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6071595A (en) * | 1994-10-26 | 2000-06-06 | The United States Of America As Represented By The National Aeronautics And Space Administration | Substrate with low secondary emissions |
JP4472073B2 (ja) * | 1999-09-03 | 2010-06-02 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
-
2003
- 2003-12-03 US US10/727,705 patent/US7023126B2/en not_active Expired - Lifetime
-
2004
- 2004-12-02 WO PCT/US2004/040222 patent/WO2005057603A2/en active Application Filing
- 2004-12-02 EP EP04812674A patent/EP1700328B1/en active Active
- 2004-12-02 JP JP2006542709A patent/JP4686470B2/ja active Active
- 2004-12-02 CN CN2004800358707A patent/CN1890773B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10172458A (ja) * | 1996-12-10 | 1998-06-26 | Hamamatsu Photonics Kk | イメージインテンシファイア |
WO2003032358A1 (en) * | 2001-10-09 | 2003-04-17 | Itt Manufacturing Enterprises, Inc. | Intensified hybrid solid-state sensor |
Also Published As
Publication number | Publication date |
---|---|
US7023126B2 (en) | 2006-04-04 |
EP1700328B1 (en) | 2009-09-23 |
WO2005057603A3 (en) | 2005-10-13 |
CN1890773B (zh) | 2011-03-30 |
EP1700328A2 (en) | 2006-09-13 |
WO2005057603A2 (en) | 2005-06-23 |
JP2007514282A (ja) | 2007-05-31 |
CN1890773A (zh) | 2007-01-03 |
US20050122021A1 (en) | 2005-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4686470B2 (ja) | 電子衝突型デバイスにおけるハロー低減用の表面構造 | |
US4864131A (en) | Positron microscopy | |
US7508131B2 (en) | Electron multipliers and radiation detectors | |
Tremsin et al. | Efficiency optimization of microchannel plate (MCP) neutron imaging detectors. I. Square channels with 10B doping | |
JP2014132598A (ja) | チャンバ内電子検出器 | |
EP1636819B1 (en) | Particle detector suitable for detecting ions and electrons | |
US20050093410A1 (en) | Electron multipliers and radiation detectors | |
Doyle et al. | A new approach to nuclear microscopy: the ion–electron emission microscope | |
Chen et al. | The gain and time characteristics of microchannel plates in various channel geometries | |
JP4356996B2 (ja) | 入出力面を漏斗形状にしたマイクロチャネルプレート | |
US5063293A (en) | Positron microscopy | |
JP2011129362A (ja) | マイクロチャネルプレート組立体及びマイクロチャネルプレート検出器 | |
US9837238B2 (en) | Photocathode | |
Gerbier et al. | Abnormally large momentum loss in charge pickup by 900-MeV/nucleon Au nuclei | |
Boutot et al. | A microchannel plate with curved channels: an improvement in gain, relative variance and ion noise for channel plate tubes | |
Funsten et al. | Effect of local electric fields on microchannel plate detection of incident 20 keV protons | |
US10685806B2 (en) | Image intensifier bloom mitigation | |
JP3514783B2 (ja) | イオン検出器及びそれを用いたsim像検出方法 | |
US5093566A (en) | Radiation detector for elementary particles | |
Tremsin et al. | Microsphere plate electron multiplier: measurements and modeling | |
JP2000011945A (ja) | テーパ型マイクロチャンネルプレート | |
CN220584409U (zh) | 一种提高快中子探测器转换效率和空间分辨的结构 | |
Funsten et al. | Mean secondary electron yield of avalanche electrons in the channels of a microchannel plate detector | |
Duanmu et al. | Effects of ion barrier film on image noise in generation III image tube | |
Herrero et al. | Imager of low-energy neutral atoms: imaging neutrals from the magnetosphere at energies below 20 keV |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071121 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101022 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101027 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101208 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110125 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110214 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140218 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4686470 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140218 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140218 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |