JP4683691B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4683691B2
JP4683691B2 JP2000143255A JP2000143255A JP4683691B2 JP 4683691 B2 JP4683691 B2 JP 4683691B2 JP 2000143255 A JP2000143255 A JP 2000143255A JP 2000143255 A JP2000143255 A JP 2000143255A JP 4683691 B2 JP4683691 B2 JP 4683691B2
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Japan
Prior art keywords
film
island
region
organic resin
substrate
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Expired - Fee Related
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JP2000143255A
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Japanese (ja)
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JP2001326358A (ja
JP2001326358A5 (enExample
Inventor
健司 笠原
律子 河崎
里築子 長尾
美佐子 仲沢
久 大谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000143255A priority Critical patent/JP4683691B2/ja
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Publication of JP2001326358A5 publication Critical patent/JP2001326358A5/ja
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000143255A 2000-05-16 2000-05-16 半導体装置の作製方法 Expired - Fee Related JP4683691B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000143255A JP4683691B2 (ja) 2000-05-16 2000-05-16 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000143255A JP4683691B2 (ja) 2000-05-16 2000-05-16 半導体装置の作製方法

Publications (3)

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JP2001326358A JP2001326358A (ja) 2001-11-22
JP2001326358A5 JP2001326358A5 (enExample) 2007-07-12
JP4683691B2 true JP4683691B2 (ja) 2011-05-18

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JP2000143255A Expired - Fee Related JP4683691B2 (ja) 2000-05-16 2000-05-16 半導体装置の作製方法

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Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150200A (ja) * 1996-11-19 1998-06-02 Sharp Corp 薄膜トランジスタおよびその製造方法
JP4776766B2 (ja) * 1999-10-26 2011-09-21 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2001326358A (ja) 2001-11-22

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