JP4678996B2 - Dielectric film forming method and film forming apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a film forming method and a film forming apparatus for forming a dielectric film on a substrate, and more specifically, an optical element is manufactured by laminating an oxide film such as TiO ₂ , Ta ₂ O ₅ , and SiO ₂ on a substrate. The present invention relates to a film forming method and a film forming apparatus.
[0002]
[Prior art]
Conventionally, when a dielectric film is formed using a sputtering method, a dielectric target is used instead of a metal target, and an RF magnetron sputtering method is generally used as a sputtering method.
[0003]
However, since the dielectric target has a lower sputter yield than the metal target, the deposition rate is generally slow. For this reason, in order to obtain a high deposition rate, it was necessary to increase the sputtering power applied to the target. However, the dielectric target is susceptible to thermal cracking and the substrate temperature rises due to the spread of plasma. It was.
[0004]
Further, in order to eliminate the above drawbacks, a metal target and a DC or AC power source are used, and a rare gas such as Ar is allowed to flow near the target, and a reactive gas such as oxygen is allowed to flow near the substrate, so that an oxide film is formed in the space or on the substrate surface There is also a method of forming.
[0005]
However, this method has a problem that a directly oxidized film adheres to the substrate. In other words, the oxidized particles have a lower degree of migration on the substrate than the metal particles, and thus become a dielectric film having a large surface roughness or a low film density. For example, the transmittance and reflectance are hindered in optical characteristics.
[0006]
Therefore, in order to solve the above-described drawbacks, a method has been considered in which a metal film is formed in a certain region in the vacuum chamber and then the substrate is moved to oxidize the metal film in an oxygen atmosphere.
[0007]
For example, it is shown in "Method for attaching a thin film having optical performance on a flat and non-surface support" in Japanese Patent No. 2695514, and "Method and apparatus for forming a thin film" in Japanese Patent No. 2163322. Is the way.
[0008]
However, this method has a problem that the apparatus becomes large because the substrate moves between the sputtering source and the ion source.
[0009]
In general, in order to increase productivity, the substrate holder rotates at a high speed. However, in an optical monitor that measures the film thickness of a film formed on the substrate, the angle of the optical axis and one substrate surface change moment by moment. Since a correct relative positional relationship is not obtained, it is practically impossible to measure an accurate film thickness, to perform signal processing, and to feed back to the apparatus.
[0010]
Furthermore, if there is a difference in the gas pressure or gas type used between the sputtering source and the ion source, the positional accuracy between the rotating substrate holder and the partition wall for taking the pressure difference is important. There are various problems such as causing deterioration of the film characteristics due to inconsistency and reproducibility.
[0011]
Particularly in the optical field, in recent years, an error of 0.1% or less is required for its distribution and reproducibility, so that it is extremely difficult to obtain an optical film having excellent film characteristics with the above apparatus.
[0012]
Further, as a conventional technique, there is Patent No. 1694084 “Method for forming a compound thin film”. In the case of this prior art, since the substrate moves between the sputtering source and the ion source, the optical axis of the optical monitor and one substrate surface overlap each other only for a short time. It is difficult to provide feedback.
[0013]
Further, since the deposition of the metal film by the sputtering source and the oxidation by the electron cyclotron resonance plasma source occur at the same time at the boundary on the partition plate, as described above, the oxidized film is directly deposited on the substrate. There are problems such as formation of a film with poor transmittance and reflectance in optical characteristics.
[0014]
The present invention has been made in order to solve the above-described problems of the conventional technique. When a dielectric film is formed by oxidizing a metal film formed on a film formation target in a vacuum, the entire surface is formed. An object is to provide a technique for forming a uniform and high-quality dielectric film.
[0015]
[Means for Solving the Problems]
The invention according to claim 1 made to achieve the above object is a method for forming a dielectric film, comprising a step of oxidizing a metal film formed on an object to be formed in a vacuum. The film formation process by the film formation source and the oxidation while maintaining a predetermined relative positional relationship of the film formation source for forming the metal film and the oxidation source for the oxidation process with respect to the film formation target an oxidation treatment with a source, and the film-forming target, characterized by intermittently be performed in a predetermined cycle by disposed at a single shutter between the deposition source and the oxidizing source.
[0016]
In the case of the first aspect of the invention, the film forming process and the oxidizing process are intermittently performed at a predetermined cycle while maintaining the relative positional relationship between the film forming source and the oxidation source with respect to the film forming target. Therefore, the positional relationship between the film formation target, the film formation source, and the oxidation source does not always change, and as a result, it is possible to suppress variations in film characteristics during the film formation process and the oxidation process.
[0017]
In addition, according to the present invention, since the gas pressure and partial pressure in the vicinity of the film formation target, the film formation source, and the oxidation source can be kept constant, the film thickness direction and the film thickness distribution in the film formation target It is possible to obtain a very excellent dielectric film.
Furthermore, according to the present invention, the film formation process and the oxidation process can be controlled only by the operation of one shutter without turning on or off the power of the film formation source and the oxidation source. There is no variation in the film formation time due to the variation in the decrease, which is advantageous in terms of film thickness controllability and film thickness reproducibility.
[0018]
The method of the present invention can be easily and efficiently carried out by the following film forming apparatus.
That is, the invention according to claim 2 is disposed in a state in which a predetermined film forming object is disposed and a predetermined relative positional relationship with respect to the film forming object is maintained in the vacuum tank, A film-forming source for forming a predetermined metal film on the film-forming object; and a film-forming source in a state where a predetermined relative positional relationship with the film-forming object is maintained in the vacuum chamber. possess an oxidizing source for oxidizing the metal film on the object, and control means for controlling each of the oxidation treatment with the film forming process and the oxidizing source by the deposition source, wherein the control means, wherein The film forming object is disposed between the film forming source and the oxidation source, and the film forming processing function by the film forming source and the oxidation processing function by the film forming source are intermittently turned on at predetermined intervals. dielectric, characterized in that it has an off possible one shutter It is a film-forming apparatus of the film.
[0019]
According to a third aspect of the invention, in the second aspect of the invention, the shutter is configured to be movable, and has an opening through which the shutter can pass in the vicinity of the film forming source and the oxidation source. It is characterized by.
[0020]
According to the third aspect of the present invention, it is possible to control the oxidation process and film forming process only by movement of one shutter without turning the power on or off of the deposition source and an oxidizing source, more power The film formation time does not vary due to the rise and fall of the film, which is advantageous in terms of film thickness controllability and film thickness reproducibility.
[0021]
The invention according to claim 4 is the invention according to claim 3, wherein the shutter is configured to be rotatable, and has an opening provided concentrically with the rotation axis of the rotation. It is provided in the position which passes above the film-forming source and the oxidation source .
[0022]
According to the fourth aspect of the present invention, the metal film and the oxide film can be alternately and efficiently formed with a very simple configuration.
[0023]
The invention according to claim 5 is the invention according to any one of claims 2 to 4, wherein a plurality of control means for controlling the film forming process by the plurality of film forming sources and the oxidation process by the oxidation source are provided. It is characterized by having.
[0024]
According to the invention described in claim 5, it is possible to efficiently form a dielectric film composed of a plurality of layers.
[0025]
According to a sixth aspect of the present invention, in the invention according to any one of the second to fifth aspects, the film forming source includes a sputtering cathode capable of applying AC power to a plurality of targets. .
[0026]
According to the sixth aspect of the present invention, even when a certain amount of oxygen gas exists in the vacuum chamber, the metal film attached to the adjacent target surface or the like can be obtained by applying AC power to a plurality of targets. Even if it is oxidized, it can prevent arcing caused by the accumulation of plasma charges on the film surface with high electrical resistance, so it can also prevent local defects on the film formation target due to dust. Distribution can be obtained.
[0027]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of a dielectric film forming method and a film forming apparatus according to the present invention will be described below in detail with reference to the drawings.
[0028]
FIG. 1A is a schematic configuration diagram of an embodiment of a film forming apparatus according to the present invention, and FIG. 1B is a plan view showing a main part of the present embodiment.
As shown in FIG. 1A, a film forming apparatus 1 of the present embodiment has a vacuum chamber 2 connected to a vacuum exhaust system (not shown), and is rotatable provided in the upper portion of the vacuum chamber 2. A substrate (for example, a glass substrate having a diameter of 300 mm) 20 as a film formation target can be attached to the substrate holder 3.
[0029]
Further, on the back side of the substrate holder 3, a film thickness monitor 4 made of, for example, a reflective optical sensor is provided.
[0030]
The vacuum chamber 2 is connected to a reaction gas source (not shown) via gas introduction pipes 5 and 6, and a predetermined amount of reaction gas (in this embodiment, oxygen gas (O ₂ ) and argon gas). (Ar)) is introduced.
[0031]
In the present embodiment, a sputtering ring cathode (hereinafter referred to as “sputter cathode”) 7 that is a sputtering source (film formation source) and an inductively coupled plasma source (hereinafter referred to as “oxidation source”) are provided below the vacuum chamber 2. 8 (referred to as “plasma source”) is provided so as to face the substrate 20.
[0032]
Here, the reason why the substrate 20 is rotatable is to make the film thickness distribution in the circumferential direction uniform, and in the case of the present embodiment, the relative positional relationship between the sputtering cathode 7 and the plasma source 8 and the substrate 20. Is configured to be retained.
[0033]
The sputter cathode 7 is configured so that a plurality of (two in this embodiment) targets 9 can be mounted, and a predetermined power is applied to each target 9.
[0034]
In this case, it is preferable that AC power is applied to each target 9 from the viewpoint of preventing arcing caused by accumulation of plasma charges on the film surface having high electrical resistance.
[0035]
A disc-shaped shutter (control means) 10 is disposed between the sputter cathode 7 and the plasma source 8 and the substrate 20 in parallel with the substrate 20. The shutter 10 is configured to rotate about a rotation shaft 11.
[0036]
As shown in FIG. 1B, the shutter 10 is provided with a fan-shaped opening 12 formed concentrically with the rotation shaft 11 of the shutter 10.
[0037]
The opening 12 is provided at a position that passes above the sputtering cathode 7 and the plasma source 8 as the shutter 10 rotates.
[0038]
When film formation is performed using such a film formation apparatus 1, first, a predetermined substrate 20 is attached to the substrate holder 3, and the vacuum chamber 2 is set to a predetermined pressure (for example, 5 × 10 ⁻⁵ Pa or less). Then, a predetermined reaction gas is introduced through the gas introduction pipes 5 and 6, and the pressure in the vacuum chamber 2 is adjusted to a predetermined value.
[0039]
Then, the shutter 10 is rotated at a predetermined speed, and a predetermined power is applied to the sputtering cathode 7 to start film formation on the substrate 20.
[0040]
Thereby, the film-forming process and oxidation process to the board | substrate 20 are intermittently performed with a predetermined period. That is, at the moment when the opening 12 of the shutter 10 is directly above the sputtering cathode 7, sputtering is performed through the opening 12 to form a metal film on the substrate 20. On the other hand, at the moment when the opening 12 of the shutter 10 comes right above the plasma source 8, the metal film on the substrate 20 is oxidized through the opening 12.
[0041]
Then, after film formation is continuously performed for a predetermined time in this state, power supply to the sputtering cathode 7 and the plasma source 8 is stopped.
[0042]
As described above, according to the present embodiment, since the film formation process and the oxidation process are performed while the relative positional relationship between the sputtering cathode 7 and the plasma cathode 8 is maintained with respect to the substrate 20, The positional relationship between the cathode 20 and the sputter cathode 7 and the plasma cathode 8 does not always change, and as a result, it is possible to suppress the variation in film characteristics during the film forming process and the oxidizing process.
[0043]
In addition, according to the present embodiment, the gas pressure and partial pressure in the vicinity of the substrate 20, the sputter cathode 7, and the plasma cathode 8 can be kept constant, so that the film thickness direction and the film thickness distribution in the substrate 20 can be changed. A very excellent dielectric film can be obtained.
[0044]
In particular, in the present embodiment, since the film forming process and the oxidation process can be controlled only by the operation of the shutter 10 without turning on or off the power of the sputtering cathode 7 and the plasma cathode 8, There is no variation in film formation time due to variations in falling, which is advantageous in terms of film thickness controllability and film thickness reproducibility.
[0045]
Furthermore, according to the film forming apparatus 1 of the present embodiment, metal films and oxide films can be formed alternately and efficiently with a very simple configuration.
[0046]
FIGS. 2A and 2B are schematic configuration diagrams of another embodiment of the film forming apparatus according to the present invention. In the following, portions corresponding to those of the above embodiment are denoted by common reference numerals. Detailed description thereof is omitted.
[0047]
As shown in FIG. 2A, in the case of the film forming apparatus 1A of the present embodiment, the first and second sputter cathodes 7a and 7b on which different targets can be mounted, the sputter cathodes 7a and 7b, and the substrate. First and second shutters 10a and 10b that are rotatable with respect to 20 are respectively disposed.
[0048]
Here, the first and second shutters 10a and 10b are formed with circular openings 12a and 12b, respectively, and the openings 12a and 12b of the shutters are configured to overlap between the rotary shafts 11a and 11b. Has been.
[0049]
One plasma source 8A is disposed below the position where the openings 12a and 12b of the first and second shutters 10a and 10b overlap.
[0050]
In the present embodiment also, the first and second sputter cathodes 7a and 7b and the plasma source 8A are provided so as to face the substrate 20.
[0051]
When film formation is performed using such a film formation apparatus 1A, a predetermined substrate 20 is attached to the substrate holder 3 and the inside of the vacuum chamber 2 is at a predetermined pressure (for example, 5 × 10 5) as in the above embodiment. After evacuating to ⁻⁵ Pa or less), a predetermined reaction gas is introduced through the gas introduction pipes 5 and 6 to adjust the pressure in the vacuum chamber 2 to a predetermined value.
[0052]
For example, when the first metal film is formed, the opening 12b of the second shutter 10b is disposed immediately above the plasma source 8A and fixed so that the second shutter 10b does not rotate. Further, the first shutter 10a is rotated at a predetermined speed, a predetermined power is applied to the first sputter cathode 7a, and film formation on the substrate 20 is started.
[0053]
Thereby, sputtering is performed at the moment when the opening 12a of the first shutter 10a is directly above the first sputter cathode 7a, and a first metal film is formed on the substrate 20, while the first shutter 10a. The first metal film is oxidized at the moment when the opening 12a of the second electrode 12a comes right above the plasma source 8A.
[0054]
On the other hand, when forming the second metal film, the opening 12a of the first shutter 10a is disposed directly above the plasma source 8A, and is fixed so that the first shutter 10a does not rotate. Further, the second shutter 10b is rotated at a predetermined speed, a predetermined power is applied to the second sputtering cathode 7b, and film formation on the substrate 20 is started.
[0055]
Thereby, sputtering is performed at the moment when the opening 12b of the second shutter 10b is directly above the second sputtering cathode 7b, and a second metal film is formed on the substrate 20, while the second shutter 10b. The second metal film is oxidized at the moment when the opening 12b of the first electrode 12b comes directly above the plasma source 8A.
[0056]
According to this embodiment having such a configuration, as in the above embodiment, in addition to being able to form a dielectric film having uniform film characteristics and a very excellent film thickness distribution, it is composed of a plurality of layers. It is possible to efficiently form a dielectric film. Since other configurations and operational effects are the same as those of the above-described embodiment, detailed description thereof is omitted.
[0057]
The present invention is not limited to the above-described embodiment, and various changes can be made.
For example, in the above-described embodiment, a rotary shutter having an opening is provided. However, the present invention is not limited to this, and any other method can be used as long as the functions of sputtering and oxidation can be turned on / off. It is also possible to use a shutter.
However, in order to efficiently form a film with a simple configuration, the configuration as in the above embodiment is preferable.
[0058]
In addition, the shape and size of the opening of the shutter can be appropriately changed according to the film forming material, process conditions, and the like.
[0059]
Furthermore, the present invention can be applied not only to sputtering but also to vacuum processing such as vapor deposition.
[0060]
【Example】
Embodiments of a dielectric film forming method and film forming apparatus according to the present invention will be described in detail below.
<Example 1>
Film formation was performed using the film formation apparatus shown in FIGS.
In this example, a glass substrate having a diameter of 300 mm was attached to a substrate holder, and evacuated until the pressure in the vacuum chamber was 5 × 10 ⁻⁵ Pa or less.
[0061]
Then, 20 sccm of oxygen gas and 50 sccm of Ar gas were introduced into the vacuum chamber, respectively, and the pressure in the vacuum chamber was adjusted to 0.5 Pa.
[0062]
After rotating the shutter at a speed of 120 rpm, two sets of 2 inch × 8 inch size Ti targets were installed, and 1 kW of power was applied to the sputter cathode to which a 10 kHz alternating current could be applied to start film formation on the substrate. . On the other hand, the plasma source introduced oxygen gas in the vicinity and applied a power of 3 kW.
The substrate was rotated at a speed of 500 rpm.
[0063]
Thus, at the moment when the opening of the shutter is directly above the sputter cathode, a substantially metallic Ti film is deposited on the substrate to a thickness of 0.5 nm, and at the moment when the opening of the shutter is directly above the plasma source. This Ti film is oxidized.
[0064]
In this state, after 100 minutes of continuous film formation, the discharge power of the sputtering cathode was turned off, and then the power of the oxidation source was also turned off.
[0065]
When the thickness of the film on the substrate was measured from the back surface using a reflective film thickness monitor, the film thickness was 1398 nm, and the film was stacked up to 1400 nm if it was 1398 nm.
The reason why the product of the thickness of the metal state per one time and the number of laminations is different from the above value is that the thickness of the Ti film in the almost metal state is changed after being oxidized.
[0066]
When the film obtained by the above-described method was analyzed, it was an amorphous film having a complete stoichiometric composition of TiO ₂ .
[0067]
Further, when the transmittance of the film at a wavelength of 1550 nm was measured, it showed excellent transparency with an extinction coefficient of 5 × 10 ⁻⁵ at 100%.
[0068]
Further, the distribution of refractive index, extinction coefficient, and optical film thickness (product of refractive index and physical film thickness) are 2.30 ± 0.01 and (5.0 ± 0.3) × 10 ^{− on the} entire surface of the substrate, respectively. ⁵ It was confirmed that a very excellent distribution of 1400 ± 0.1 nm was obtained.
[0069]
<Example 2>
Film formation was performed using the film formation apparatus shown in FIGS.
In this example, a glass substrate having a diameter of 200 mm was attached to the substrate holder, and the vacuum chamber was evacuated to 1 × 10 ⁻⁵ Pa or less.
[0070]
Then, 60 sccm of oxygen gas and 60 sccm of Ar gas were introduced into the vacuum chamber, respectively, and the pressure in the vacuum chamber was adjusted to 1 Pa.
[0071]
In this embodiment, first, the second shutter opening was fixed so as to be directly above the plasma source.
[0072]
Next, after rotating the first shutter at a speed of 200 rpm, 2 square x 2 inch square Ta targets were installed, and 2 kW of electric power was applied to the first sputter cathode to which an alternating current of 40 kHz could be applied. At the same time, 5 kW of power was applied to the plasma source.
The substrate was rotated at a speed of 1000 rpm.
[0073]
As a result, at the moment when the opening of the first shutter is directly above the sputtering cathode, a substantially metallic Ta film is formed on the substrate to a thickness of 0.05 nm, and the opening of the shutter is directly above the plasma source. At the moment, this Ta film is oxidized.
[0074]
This state was continued continuously, the film formation was interrupted occasionally, the film thickness was measured from the back surface of the substrate with a film thickness monitor, and the layers were laminated until the thickness reached 183 nm.
[0075]
Next, after fixing the position where the opening of the first shutter is directly above the plasma source and rotating the first shutter at a speed of 190 rpm, an AC current of 40 kHz is applied to the Si target 2 type. The film formation was started by switching to the second sputter cathode.
[0076]
The thickness of the likewise SiO ₂ film was laminated to a 268 nm.
In this case, the thicknesses of Ta ₂ O ₅ 183 nm and SiO ₂ 268 nm are represented by T and S, respectively, and (TS) ⁵ TS ⁴ T (ST) ⁵ S (TS) ⁵ TS ⁴ T (ST) ⁵ is formed on the substrate. Was repeated to produce an optical film having a total film thickness of about 12 μm.
[0077]
(Here, (TS) ⁵ repeats the lamination of TS five times, and S ⁴ indicates that the SiO ₂ film has a thickness of 268 nm four times, ie, 1072 nm).
[0078]
When the transmittance of the obtained film was measured, as shown in FIG. 3, excellent optical filter characteristics that pass only near the wavelength of 1567 nm were obtained.
[0079]
Further, the transmittance distribution of 1567 nm wavelength light on a glass substrate having a diameter of 200 mm was within a range of 94 ± 1%, and the characteristic distribution was also very good.
[0080]
<Example 3>
The film formation was performed in the same manner as in Example 1 except that 630 w of DC power was applied to the 2 inch × 8 inch size Ti target type 2 instead of applying 10 kHz of alternating current.
[0081]
The Ti film thickness in a substantially metallic state on the substrate when the shutter opening passed once over the sputter cathode was 0.5 nm as in Example 1.
[0082]
The DC power supply, which was thought to be caused by abnormal discharge during film formation, started to be cut off, and several cut-offs occurred thereafter.
[0083]
When the transmittance of the film at a wavelength of 1550 nm was measured after the film formation, it was about 100%, and its extinction coefficient was 10 ⁻⁴ units, and an almost transparent film was obtained. The distribution in the substrate was 100% at most places, but there were 99% transmittance portions at 2 to 3 places. When the inside of the apparatus was observed after the film formation, some arcing marks were observed on the target surface and the inner side of the deposition preventing plate.
[0084]
In this apparatus and the film forming method, since the sputtering gas atmosphere exists stably in a mixed state of Ar and oxygen, the Ti film on the outermost surface of the target and the inner side of the deposition preventing plate is oxidized to some extent. It is considered that charges accumulated on the Ti oxide film having a high electric resistance in the region where there was an arc, which caused arcing.
[0085]
On the other hand, when the film on the substrate was observed with an optical microscope, several granular dusts were unevenly distributed in the portion where the transmittance was slightly reduced. This is considered that when arcing occurs on the target, the oxide becomes dust and enters the substrate at high speed.
[0086]
【The invention's effect】
As described above, according to the present invention, a uniform and high-quality dielectric film can be formed over the entire surface of the film formation target.
[Brief description of the drawings]
1A is a schematic configuration diagram of an embodiment of a film forming apparatus according to the present invention; FIG. 1B is a plan view showing a main part of the embodiment; FIG. Schematic configuration diagram of another embodiment of a film forming apparatus (b): a plan view showing the main part of the embodiment; FIG. 3 is a graph showing the optical filter characteristics of the film according to Example 2;
DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus 2 ... Vacuum chamber 7 ... Sputtering ring cathode (film-forming source) 8 ... Inductive coupling type plasma source (oxidation source) 9 ... Target 10 ... Shutter (control means) 12 ... Opening

Claims (6)

A dielectric film forming method including a step of oxidizing a metal film formed on an object to be formed in a vacuum,
The film formation process by the film formation source and the film formation source for forming the metal film and the oxidation source for performing the oxidation process are maintained in a predetermined relative positional relationship with respect to the object to be formed. an oxidation treatment with an oxidizing source, the formation and film target, a dielectric characterized by intermittently be performed in a predetermined cycle by one of the shutter which is disposed between the deposition source and the oxidizing source A film forming method. A vacuum chamber in which a predetermined film formation target is disposed;
A film forming source for forming a predetermined metal film on the film forming object, disposed in a state of maintaining a predetermined relative positional relationship with the film forming object in the vacuum chamber;
An oxidation source for oxidizing the metal film on the film formation object, disposed in a state of maintaining a predetermined relative positional relationship with the film formation object in the vacuum chamber;
Have a control means for controlling the oxidation treatment with the oxidizing source and the film forming process by the deposition source, respectively,
The control unit is disposed between the film formation target, the film formation source, and the oxidation source, and performs a film formation process function by the film formation source and an oxidation process function by the film formation source in a predetermined cycle. A dielectric film forming apparatus comprising a single shutter that can be intermittently turned on and off . The shutter is movably constructed, the dielectric film according to claim 2, characterized in that it has an opening capable of passing through the vicinity of the deposition source and the oxidizing source with the movement Deposition device. The shutter is configured to be rotatable and has an opening provided concentrically with the rotation axis of the rotation, and the opening is provided at a position passing over the film formation source and the oxidation source. it dielectric film deposition apparatus according to claim 3, wherein being. 5. The apparatus according to claim 2, further comprising: a plurality of film forming sources; and a plurality of control units for controlling film forming processes performed by the plurality of film forming sources and an oxidation process performed by the oxidation source. The dielectric film forming apparatus according to Item. 6. The dielectric film deposition apparatus according to claim 2, wherein the deposition source includes a sputtering cathode capable of applying AC power to a plurality of targets.

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